CN104347775A - LED (Light Emitting Diode) chip with graphical N electrode - Google Patents
LED (Light Emitting Diode) chip with graphical N electrode Download PDFInfo
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- CN104347775A CN104347775A CN201410508383.3A CN201410508383A CN104347775A CN 104347775 A CN104347775 A CN 104347775A CN 201410508383 A CN201410508383 A CN 201410508383A CN 104347775 A CN104347775 A CN 104347775A
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- electrode
- barrier layer
- graphical
- led chip
- central area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The invention relates to an LED (Light Emitting Diode) chip with a graphical N electrode. A barrier layer which is extremely weak in light reflection is formed in a marginal area between LED chips, and the N electrode is expanded to be right above the barrier layer, so that on one hand, the reflecting efficiency of a reflecting mirror is not influenced due to the fact that the N electrode is expanded to be on the barrier layer which is extremely weak in light reflection, and on the other hand, the uniformity of luminance and heat dissipation of the LED chip is improved as the expanded N electrode can enable current distribution to be more uniform.
Description
Technical field
The present invention relates to LED and manufacture field, particularly relate to a kind of LED chip with graphical N electrode.
Background technology
Along with LED is in the progressively application of lighting field, the requirement that market is imitated white light LED light is more and more higher, GaN base vertical structure LED has good heat-sinking capability, Bulk current injection can be born, such light emitting diode (LED) chip with vertical structure can be equivalent to several formal dress fabric chip, amounts to the part that cost only has positive assembling structure.Therefore, GaN base vertical structure LED be market institute to, be semiconductor lighting development inexorable trend.Compared with traditional planar structure LED, vertical structure LED has many advantages: vertical structure LED two electrodes are respectively in the both sides of LED, and electric current almost all flows vertically through epitaxial loayer, does not have the electric current of lateral flow, homogeneous current distribution, and the heat of generation reduces; Adopt the method for bonding and stripping Sapphire Substrate bad for heat conduction to be removed, change good conductivity into and there is the substrate of high heat conductance, can effectively dispel the heat; N-GaN layer is exiting surface, and this layer has certain thickness, is convenient to make surface micro-structure, to improve light extraction efficiency.In a word, compared with conventional planar structure, vertical stratification has obvious advantage in bright dipping, heat radiation etc.
Along with the high speed development of semiconductor technology, the internal quantum of LED can reach more than 90%, and the raising of external quantum efficiency is not remarkable, be subject to the impact of factors, as LED structure, electrode shape, electrode material, current expansion layer thicknesses etc., become the leading factor that restriction LED luminous efficiency improves.Relative to other methods improving LED luminance (as highly reflecting films, substrate desquamation, surface coarsening etc.), the most easy-operating is be optimized the electrode shape of chip, electrode shape is very large on light output impact, if current spread is insufficient, uneven, bright dipping can be caused to reduce, the luminous efficiency of LED can be improved by the shape of appropriate design electrode.
In theory, in the place that ionization electrode is far away, electric current is less, and brightness is lower.For existing vertical electrode structure technology, tradition thinks that electrode shape is that the I-V performance of the LED chip of " ten " font or " rice " word shape is best.But " ten " font or " rice " font electrode heart part in the chips, because electrode is more concentrated, electric current is also relatively concentrated, LED current is caused to distribute so even not, especially arrive the marginal portion of table top, CURRENT DISTRIBUTION is extremely uneven, makes the brightness of marginal portion very little.Near central circular surrounding them and slotting finger, current crowding, in chip edge part, electric current is little.Current trend is more and more less from centre to edge, and brightness is also more and more weak.
Generally when making vertical structure LED, usual use argent is as speculum, but due to the easy diffusion of Ag, one deck barrier layer (barrier) can be made and wrap speculum, each chip circumference has general 5 μm ~ 10 μm regions does not have reflector (as Fig. 1), in FIG, speculum 20 is surrounded by barrier layer 10, because speculum 20 is for reflection ray, and barrier layer 10 is due to material restriction, reflection ray is extremely weak, this regional reflex light is caused to have very most of loss, and after " ten " font general on evaporation or " rice " font N electrode, the distribution of this zone current is also uneven, bright dipping contribution is also reduced greatly.
Summary of the invention
The object of the present invention is to provide a kind of LED chip with graphical N electrode, the reflective weak defect of edge barrier layer can be utilized, form N electrode above it, make CURRENT DISTRIBUTION more even, improve luminous efficiency.
To achieve these goals, the present invention proposes a kind of LED chip with graphical N electrode, comprise: speculum, barrier layer, epitaxial loayer and N electrode, described speculum to be formed in described barrier layer and to expose a surface of speculum, described epitaxial loayer is formed on the surface on described speculum and barrier layer, described N electrode is formed at the surface of described epitaxial loayer, described N electrode comprises central area and inserts and refers to, a part inserts the epi-layer surface referring to be formed in directly over described barrier layer, described slotting finger covers directly over described barrier layer in whole or in part, described slotting finger is connected with described central area.
Further, described epitaxial loayer comprises the P-GaN, quantum well and the N-GaN that are formed successively, and described P-GaN is formed on the surface on described speculum and barrier layer, and described N electrode is formed at the surface of described N-GaN.
Further, described slotting finger is strip, is point symmetry arrangement along described central area.
Further, described slotting finger-type becomes matrix pattern or octagon.
Further, the width range of described slotting finger is 3 μm ~ 10 μm.
Further, described central area is circular or polygon.
Further, when described central area is circular, the diameter range of described central area is 50 μm-120 μm; When described central area is polygon, the side size range of described central area is 30 μm-100 μm.
Further, the material of described N electrode is one or more of Cr, Al, Ti, Pt, Au.
Compared with prior art, beneficial effect of the present invention is mainly reflected in: because the fringe region place between LED chip is formed with reflective extremely weak barrier layer, N electrode is extended to directly over barrier layer, on the one hand because N electrode expansion is on reflective extremely weak barrier layer, do not affect the reflection efficiency of speculum; The N electrode of expansion can make CURRENT DISTRIBUTION more even on the other hand, improves the luminescence of LED chip and the uniformity of heat radiation.
Accompanying drawing explanation
Fig. 1 is the structural representation that in prior art, barrier layer surrounds speculum;
Fig. 2 is the vertical view of the N electrode of LED chip in first embodiment of the invention;
Fig. 3 be along A-A ' in Fig. 2 to generalized section;
Fig. 4 is the vertical view of the N electrode of LED chip in second embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, the LED chip with graphical N electrode of the present invention is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Embodiment one
Please refer to Fig. 2 and Fig. 3, in the present embodiment, propose a kind of LED chip with graphical N electrode, comprise: speculum 110, barrier layer 100, epitaxial loayer and N electrode 300, described speculum 110 to be formed in described barrier layer 100 and to expose a surface of speculum 110, described epitaxial loayer is formed on the surface on described speculum 110 and barrier layer 100, described N electrode 300 is formed at the surface of described epitaxial loayer, described N electrode 300 comprises central area 310 and slotting finger 320, the slotting finger 320 of a part is formed in the epi-layer surface directly over described barrier layer 100, described slotting finger 320 covers the surface of epitaxial loayer directly over described barrier layer 100 in whole or in part, described slotting finger 320 is connected with described central area 310.
Concrete, please refer to Fig. 3, described epitaxial loayer comprises the P-GaN210, quantum well 220 and the N-GaN230 that are formed successively, described P-GaN210 is formed on the surface on described speculum 110 and barrier layer 100, described N electrode 300 is formed at the surface of described N-GaN230, wherein, in Fig. 2 and not shown concrete epitaxial loayer.
In the present embodiment, described slotting finger 320 is strip, along the arrangement in point symmetry of described central area 310, namely described slotting finger 320 forms matrix pattern, has certain right angle, and the width range of described slotting finger 320 is 3 μm ~ 10 μm, it is such as 5 μm, width due to barrier layer 100 is generally 5 μm ~ 10 μm, and insert finger 320 and can cover in whole or in part directly over barrier layer 100, this can decide according to the demand of technique.
In the present embodiment, described central area 310 is circular, and the diameter range of central area 310 is 50 μm-120 μm, such as, be 100 μm; The material of described N electrode is one or more of Cr, Al, Ti, Pt, Au or metalloid.
In the present embodiment, because N electrode comprises slotting finger 320, more even at N-GaN EDS maps of electric current can be made, improve luminous and heating, increase the luminous efficiency of LED chip, in addition, because slotting finger 320 is formed in directly over reflective extremely weak barrier layer 100, the reflection efficiency of more speculum 110 can not be blocked.
Embodiment two
In the present embodiment, the LED chip with graphical N electrode proposed is the improvement to embodiment one, difference is, the shape of the slotting finger 320 of N electrode 300 is octagon, another difference is at the polygon with central area 310, the side size range of described central area is 30 μm-100 μm, such as, be 60 μm.All the other are all identical with embodiment one, and therefore not to repeat here, and concrete can reference example one.
Because the slotting finger 320 in embodiment one is matrix pattern, its corner has 90 °, causes the CURRENT DISTRIBUTION at this place comparatively intensive, makes the CURRENT DISTRIBUTION of this areas adjacent uneven, have impact on luminous efficiency to a certain extent.Therefore, please refer to Fig. 4 (also for illustrating concrete epitaxial loayer in Fig. 4), in the present embodiment, slotting finger 320 is revised as octagon by the matrix pattern in embodiment one, the phenomenon that corner is current concentrated can be solved, and reduce the light-emitting area that blocks, make more even at N-GaN EDS maps of electric current, further improve luminous efficiency.In addition, a part is inserted finger 320 and is still formed on the barrier layer 100 of not reverberation, and the reflective surface area of vacant more speculum 100.
To sum up, what provide in the embodiment of the present invention has in the LED chip of graphical N electrode, because the fringe region place between LED chip is formed with reflective extremely weak barrier layer, N electrode is extended to directly over barrier layer, on the one hand because N electrode expansion is on reflective extremely weak barrier layer, do not affect the reflection efficiency of speculum; The N electrode of expansion can make CURRENT DISTRIBUTION more even on the other hand, improves the luminescence of LED chip and the uniformity of heat radiation.
Above are only the preferred embodiments of the present invention, any restriction is not played to the present invention.Any person of ordinary skill in the field; in the scope not departing from technical scheme of the present invention; the technical scheme disclose the present invention and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from technical scheme of the present invention, still belong within protection scope of the present invention.
Claims (8)
1. one kind has the LED chip of graphical N electrode, it is characterized in that, comprise: speculum, barrier layer, epitaxial loayer and N electrode, described speculum to be formed in described barrier layer and to expose a surface of speculum, described epitaxial loayer is formed on the surface on described speculum and barrier layer, described N electrode is formed at the surface of described epitaxial loayer, described N electrode comprises central area and inserts and refers to, a part inserts the epi-layer surface referring to be formed in directly over described barrier layer, described slotting finger covers the surface of epitaxial loayer directly over described barrier layer in whole or in part, described slotting finger is connected with described central area.
2. there is the LED chip of graphical N electrode as claimed in claim 1, it is characterized in that, described epitaxial loayer comprises the P-GaN, quantum well and the N-GaN that are formed successively, and described P-GaN is formed on the surface on described speculum and barrier layer, and described N electrode is formed at the surface of described N-GaN.
3. have the LED chip of graphical N electrode as claimed in claim 1, it is characterized in that, described slotting finger is strip, is point symmetry arrangement along described central area.
4. have the LED chip of graphical N electrode as claimed in claim 3, it is characterized in that, described slotting finger-type becomes matrix pattern or octagon.
5. have the LED chip of graphical N electrode as claimed in claim 3, it is characterized in that, the width range of described slotting finger is 3 μm ~ 10 μm.
6. have the LED chip of graphical N electrode as claimed in claim 1, it is characterized in that, described central area is circular or polygon.
7. have the LED chip of graphical N electrode as claimed in claim 6, it is characterized in that, when described central area is circular, the diameter range of described central area is 50 μm-120 μm; When described central area is polygon, the side size range of described central area is 30 μm-100 μm.
8. have the LED chip of graphical N electrode as claimed in claim 1, it is characterized in that, the material of described N electrode is one or more of Cr, Al, Ti, Pt, Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508383.3A CN104347775B (en) | 2014-09-28 | 2014-09-28 | LED chip with graphical N electrode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410508383.3A CN104347775B (en) | 2014-09-28 | 2014-09-28 | LED chip with graphical N electrode |
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| CN104347775A true CN104347775A (en) | 2015-02-11 |
| CN104347775B CN104347775B (en) | 2017-10-17 |
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| CN201410508383.3A Expired - Fee Related CN104347775B (en) | 2014-09-28 | 2014-09-28 | LED chip with graphical N electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972089A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of humanoid N electrode of straw and light emitting diode (LED) chip with vertical structure |
| CN106972090A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of arc line shaped N electrode and light emitting diode (LED) chip with vertical structure |
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| CN101132043A (en) * | 2006-08-18 | 2008-02-27 | 克里公司 | Diffusion barrier for light emitting diodes |
| CN101159307A (en) * | 2007-11-16 | 2008-04-09 | 北京工业大学 | Emitting surface semiconductor LED with nanostructure and its preparing process |
| CN101442092A (en) * | 2008-11-14 | 2009-05-27 | 厦门乾照光电有限公司 | High-brightness LED and method of manufacturing the same |
| CN102255022A (en) * | 2010-05-18 | 2011-11-23 | 首尔Opto仪器股份有限公司 | High-efficiency Light-emitting Diode |
| CN102468393A (en) * | 2010-10-29 | 2012-05-23 | Lg伊诺特有限公司 | Light emitting device |
| CN103765615A (en) * | 2011-06-24 | 2014-04-30 | 克利公司 | LED structure with enhanced mirror reflectivity |
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2014
- 2014-09-28 CN CN201410508383.3A patent/CN104347775B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101132043A (en) * | 2006-08-18 | 2008-02-27 | 克里公司 | Diffusion barrier for light emitting diodes |
| CN101159307A (en) * | 2007-11-16 | 2008-04-09 | 北京工业大学 | Emitting surface semiconductor LED with nanostructure and its preparing process |
| CN101442092A (en) * | 2008-11-14 | 2009-05-27 | 厦门乾照光电有限公司 | High-brightness LED and method of manufacturing the same |
| CN102255022A (en) * | 2010-05-18 | 2011-11-23 | 首尔Opto仪器股份有限公司 | High-efficiency Light-emitting Diode |
| CN102468393A (en) * | 2010-10-29 | 2012-05-23 | Lg伊诺特有限公司 | Light emitting device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972089A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of humanoid N electrode of straw and light emitting diode (LED) chip with vertical structure |
| CN106972090A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of arc line shaped N electrode and light emitting diode (LED) chip with vertical structure |
| CN106972089B (en) * | 2017-04-14 | 2023-09-22 | 华南理工大学 | Straw-shaped N electrode and vertical structure LED chip |
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| CN104347775B (en) | 2017-10-17 |
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Granted publication date: 20171017 Termination date: 20200928 |