CN203415611U

CN203415611U - N electrode structure improvement of reversed polarity quaternary light emitting diode

Info

Publication number: CN203415611U
Application number: CN201320360418.4U
Authority: CN
Inventors: 项嵩仁; 谢武伦; 曹胜凯; 洪茂峰; 曾于庭
Original assignee: Chance More Electronics Technology Co Ltd
Current assignee: Chance More Electronics Technology Co Ltd
Priority date: 2013-06-21
Filing date: 2013-06-21
Publication date: 2014-01-29
Anticipated expiration: 2023-06-21

Abstract

The utility model discloses an N electrode structure improvement of a reversed polarity quaternary light emitting diode. An N electrode is an N type semiconductor layer applied in the reversed polarity light emitting diode employing quaternary materials, the N electrode comprises a round combination liner and two sets of supporting feet sets extending from the combination liner to the left direction and the right direction or to the upper direction and the lower direction of the N type semiconductor layer, each supporting feet set comprises three linear-extending finger-shaped objects parallel to each other, equal distances are reserved between the finger-shaped objects, the three finger-shaped objects are respectively provided with a terminal, and the distances from each terminal to edges of the N type semiconductor layer are the same. According to the N electrode structure improvement of the reversed polarity quaternary light emitting diode, on the basis of no influence on current distribution, the layout density and the area proportion of the N electrode structure relative to an exposed surface of the N type semiconductor layer are reduced, and the luminescence efficiency of the light emitting diode is improved.

Description

The N electrode structure improvement of reversed polarity four-element LED

Technical field

The utility model is relevant with light-emitting diode, particularly relates to a kind of N electrode structure of reversed polarity light-emitting diode of quaternary material.

Background technology

The structure of reversed polarity quaternary (AlInGaP) light-emitting diode, as shown in Figure 1, comprise by semiconductor and build the formed n type semiconductor layer 11 of brilliant processing procedure and p type semiconductor layer 12, through a bonding processing procedure, be incorporated into the permanent substrate 10 of p type semiconductor layer 12, the N electrode 14 of being located at the P electrode 13 of these permanent substrate 10 bottom surfaces and being located at n type semiconductor layer 11 surfaces.

For the distributivity of electric current is provided, N electrode 14 presents with various geometries, and as shown in Figures 2 to 7, the N electrode 14 in each figure, all has one in conjunction with liner 141 and several from conjunction with the outward extending leg 142 of liner 141.The effect of leg 142 is to make electric current as much as possible to circumferential distribution, makes element function optimization.

N electrode 14 is to be made by the metal material of high conductivity, the area being covered by N electrode 14 is non-luminous, therefore, when the too much N electrode area of leg 142 numbers presented at high proportion with respect to the area of the exposed surface of n type semiconductor layer 11, will reduce the luminous efficiency of light-emitting diode.This case inventor test by luminosity, proves that shape, leg quantity, the leg distribution scenario of N electrode 14 can affect luminous efficiency really.As shown in Figure 8, this case inventor carries out brightness matching measurement by above-mentioned several N electrodes in identical packages structures (5mm Lamp).The N electrode of Fig. 2 and Fig. 5 is generally a day line style, and Fig. 3,4,6,7 N electrode are generally radial pattern.As can be seen from Figure 8, the luminous efficiency of light-emitting diode of N electrode (as Fig. 2 and Fig. 5) that has day line style is higher than the luminous efficiency of radial pattern N electrode (as Fig. 3,4,6,7) light-emitting diode.Know by inference because of the leg quantity of radial pattern N electrode too much, leg distribution density is too high, due to the exposed surface that occupies too much n type semiconductor layer 11.

Yet, the requirement based on optimized emission diode element performance and luminous efficiency, this case inventor thinks that the N electrode (Fig. 2 and Fig. 5) of day line style still has the space of improvement again.

Described day line style N electrode of above-mentioned Fig. 2 and Fig. 5 has eight from distinguishing the linearly extended leg 142 of direction (or above-below direction) to the left and right in conjunction with liner 141.Do not affecting CURRENT DISTRIBUTION and improving on the basis of luminous efficiency again, we optimize this N electrode structure in expectation again.

Utility model content

The purpose of this utility model is that a kind of N electrode structure improvement of reversed polarity four-element LED is being provided, compare with the sky line style N electrode of Fig. 1 and Fig. 4, the leg number of N electrode structure of the present utility model is reduced to six, do not affecting on the basis of CURRENT DISTRIBUTION, reduce N electrode structure with respect to layout density and the area ratio of n type semiconductor layer exposure, thereby improve again the luminous efficiency of light-emitting diode.

Can reach above-mentioned purpose, the utility model by the following technical solutions:

The N electrode structure improvement of reversed polarity four-element LED, this N electrode is the n type semiconductor layer that is applied to the reversed polarity light-emitting diode of quaternary material (AlInGaP); It is characterized in that: this N electrode comprises the combination liner of a circle, and two groups from this in conjunction with liner to the left of this n type semiconductor layer to and right or direction and the lower direction leg group of extending; Each leg group comprises three linearly extended finger pieces, and three finger pieces are parallel to each other, and keep equidistance; Three finger pieces have respectively a terminal, and each terminal is identical to the distance at the edge of this n type semiconductor layer.

Further:

The metallic film that described N electrode is high conductivity, this high-conductivity metal film is wherein a kind of or its alloy that is selected from gold, aluminium, germanium, nickel.

The diameter of described combination liner is 70～140 μ m.

Described in each, the width of finger piece is 5-20 μ m.

Described in each, the terminal of finger piece to the distance at described n type semiconductor layer edge is 20-80um.

The utility model has the advantage of:

The utility model is not affecting on the basis of CURRENT DISTRIBUTION, and reduction N electrode structure, with respect to layout density and the area ratio of n type semiconductor layer exposure, has improved the luminous efficiency of light-emitting diode.

Accompanying drawing explanation

Fig. 1 is the generalized section of reversed polarity light-emitting diode.

Fig. 2 is one of plan view from above of known reversed polarity light-emitting diode N electrode.

Fig. 3 be known reversed polarity light-emitting diode N electrode plan view from above two.

Fig. 4 be known reversed polarity light-emitting diode N electrode plan view from above three.

Fig. 5 be known reversed polarity light-emitting diode N electrode plan view from above four.

Fig. 6 be known reversed polarity light-emitting diode N electrode plan view from above five.

Fig. 7 be known reversed polarity light-emitting diode N electrode plan view from above six.

Fig. 8 is that the N electrode shown in Fig. 2 to Fig. 7 carries out brightness ratio to survey map in identical packages structures (5mm Lamp).

Fig. 9 is the plan view from above of N electrode in the utility model.

Embodiment

Fig. 9 describes the shape of N electrode of the present utility model.In the utility model, N electrode 20 is the n type semiconductor layers 30 that are applied to the reversed polarity light-emitting diode of quaternary material (AlInGaP).The combination liner 21[that this N electrode 20 comprises a circle is for follow-up routing (Wire Bonding)], and two groups from the leg group 22 to the left of n type semiconductor layer 30 and right (or and under) direction extension in conjunction with liner 21, each leg group 22 comprises three linearly extended finger pieces 221, three finger pieces 221 are parallel to each other, and keep equidistance D1; Three finger pieces 221 have respectively a terminal 222, and each terminal 222 is identical to the distance D 2 at the edge 31 of n type semiconductor layer 30.

The metallic film that N electrode 20 is high conductivity, including but not limited to metal or its alloys such as gold, aluminium, germanium, nickel.N electrode 20 is applicable to the chip size below 12mil (300*300um).Diameter in conjunction with liner 21 is 70～140 μ m; The width W of each finger piece 221 is 5-20 μ m, and terminal 222 to the distance D 2 at the edge 31 of n type semiconductor layer 30 is 20-80um.

Table one is CURRENT DISTRIBUTION effect and the luminous efficiency test result of the N electrode of different total finger pieces.Be at same chip size, each tested N electrode is except number of fingers difference, and other are all tested under identical condition about the diameter in conjunction with liner, finger width, terminal to N type semiconductor Edge Distance.The N electrode that the utlity model has six finger pieces has best efficiency.

Table one

Finger piece sum	4	6 (the utility model)	8	10
					Voltage (V) forward	2.21	2.11	2.11	2.1
Brightness@20mA (mcd)	425	420	400	380
					Efficiency (mcd/mA.V)	9.6	10.0	9.5	9.0

The above is preferred embodiment of the present utility model and the know-why used thereof; for a person skilled in the art; in the situation that not deviating from spirit and scope of the present utility model; the apparent changes such as any equivalent transformation based on technical solutions of the utility model basis, simple replacement, within all belonging to the utility model protection range.

Claims

1. the N electrode structure of reversed polarity four-element LED improvement, this N electrode is the n type semiconductor layer that is applied to the reversed polarity light-emitting diode of quaternary material; It is characterized in that:

This N electrode comprises the combination liner of a circle, and two groups from this in conjunction with liner to the left of this n type semiconductor layer to and right or direction and the lower direction leg group of extending; Each leg group comprises three linearly extended finger pieces, and three finger pieces are parallel to each other, and keep equidistance; Three finger pieces have respectively a terminal, and each terminal is identical to the distance at the edge of this n type semiconductor layer.

2. the N electrode structure of reversed polarity four-element LED as claimed in claim 1 improvement, is characterized in that, the metallic film that described N electrode is high conductivity, and this high-conductivity metal film is wherein a kind of or its alloy that is selected from gold, aluminium, germanium, nickel.

3. the N electrode structure of reversed polarity four-element LED as claimed in claim 1 improvement, is characterized in that, the diameter of described combination liner is 70～140 μ m.

4. the N electrode structure of reversed polarity four-element LED as claimed in claim 3 improvement, is characterized in that, described in each, the width of finger piece is 5-20 μ m.

5. the N electrode structure of reversed polarity four-element LED as claimed in claim 4 improvement, is characterized in that, described in each, the terminal of finger piece to the distance at described n type semiconductor layer edge is 20-80um.