CN101440485B - 薄膜处理设备 - Google Patents

薄膜处理设备 Download PDF

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Publication number
CN101440485B
CN101440485B CN2008101776616A CN200810177661A CN101440485B CN 101440485 B CN101440485 B CN 101440485B CN 2008101776616 A CN2008101776616 A CN 2008101776616A CN 200810177661 A CN200810177661 A CN 200810177661A CN 101440485 B CN101440485 B CN 101440485B
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CN
China
Prior art keywords
upper electrode
gas distribution
distribution grid
equipment according
cooling
Prior art date
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Active
Application number
CN2008101776616A
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English (en)
Chinese (zh)
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CN101440485A (zh
Inventor
车安基
崔宰旭
金东辉
金友镇
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Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN101440485A publication Critical patent/CN101440485A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
CN2008101776616A 2007-11-20 2008-11-20 薄膜处理设备 Active CN101440485B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020070118820 2007-11-20
KR1020070118820A KR101381208B1 (ko) 2007-11-20 2007-11-20 박막처리장치
KR10-2007-0118820 2007-11-20

Publications (2)

Publication Number Publication Date
CN101440485A CN101440485A (zh) 2009-05-27
CN101440485B true CN101440485B (zh) 2013-05-22

Family

ID=40725088

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101776616A Active CN101440485B (zh) 2007-11-20 2008-11-20 薄膜处理设备

Country Status (3)

Country Link
KR (1) KR101381208B1 (ko)
CN (1) CN101440485B (ko)
TW (1) TWI440736B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102051595B (zh) * 2009-10-29 2013-04-03 无锡华润上华半导体有限公司 化学气相沉积装置及其喷头
CN110828351A (zh) * 2019-11-28 2020-02-21 徐州利鼎新材科技有限公司 一种太阳能电池封装膜生产用冷却装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6631692B1 (en) * 1999-03-18 2003-10-14 Asm Japan K.K. Plasma CVD film-forming device
CN1812684A (zh) * 2005-01-28 2006-08-02 应用材料公司 等离子反应器顶置源功率电极

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101079224B1 (ko) * 2005-07-29 2011-11-03 엘아이지에이디피 주식회사 상부전극 어셈블리 및 플라즈마 처리 장치
JP4593381B2 (ja) * 2005-06-20 2010-12-08 東京エレクトロン株式会社 上部電極、プラズマ処理装置およびプラズマ処理方法
KR101036185B1 (ko) * 2005-09-30 2011-05-23 엘아이지에이디피 주식회사 플라즈마 처리장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6631692B1 (en) * 1999-03-18 2003-10-14 Asm Japan K.K. Plasma CVD film-forming device
CN1812684A (zh) * 2005-01-28 2006-08-02 应用材料公司 等离子反应器顶置源功率电极

Also Published As

Publication number Publication date
KR101381208B1 (ko) 2014-04-04
TWI440736B (zh) 2014-06-11
KR20090052223A (ko) 2009-05-25
TW200930832A (en) 2009-07-16
CN101440485A (zh) 2009-05-27

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