TW200930832A - Thin film treatment apparatus - Google Patents
Thin film treatment apparatus Download PDFInfo
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- TW200930832A TW200930832A TW097144924A TW97144924A TW200930832A TW 200930832 A TW200930832 A TW 200930832A TW 097144924 A TW097144924 A TW 097144924A TW 97144924 A TW97144924 A TW 97144924A TW 200930832 A TW200930832 A TW 200930832A
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- upper electrode
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
Description
200930832 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種薄膜處理裝置 3日、2007年1〇月24日以及 之第 2007-0078132 、 2007- 本發明主張分別在2〇〇7年8月 2007年11月20曰在韓國申請 0107015 以及 2007-0118820號鐘固· 士 艰*釋國專利申請案之權益，該 等專利中請案以引用之方式併入本At。 【先前技術】200930832 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a thin film processing apparatus 3, 2007, January 24, 2007, and 2007-0078132, 2007 - the present invention claims to be 2, 7 years, respectively. August 20th, 2007, November 20th, in Korea, apply for 0107015 and 2007-0118820, Zhonggu·Shijian*, the patent application of the country, and the patent application is hereby incorporated by reference. [Prior Art]
液曰曰顯不器件、半導體器件（例如，太陽能電池）等係藉 由各種針對基板之製程製造。舉例而言，執行薄膜沈積製 程及光微影製㈣及_製程若干次以在基板上形成電路 圖案’且執行例如清潔製程、附著製程、切割製程等額外 製程。 /尤積製程及蝕刻製程係在腔型薄膜處理裝置中執行。最 近，其中使用RF(射頻）高電壓在電漿中激勵反應氣體之 PECVD(電漿增強型化學氣相沈積）裝置被廣泛用作薄膜處 理裝置之一。 圖1為說明先前技術之薄膜處理裝置之橫截面圖。 參看圖1，薄膜處理裝置包含其中包含反應空間八之腔 10 °基板2放置在腔10中’反應氣體流動至反應空間A中並 被激活’且執行薄膜處理。 上部電極34、氣體分配板30及下部電極60位於腔10中。 將RF電壓施加至上部電極34。氣體分配板3〇在上部電極34 下方並將反應氣體經由複數個注入孔32注入至反應空間a 136286.doc 200930832 中。氣體分配板30與上部電極34在其邊緣部分處藉由耦合 器件42耦合。 下部電極60面向氣體分配板3〇,且被供應有偏壓。此 外’下部電極60充當上面放置基板2之卡盤，且下部電極 60上下移動。 基板2藉由陰影框64在基板2之邊緣部分處固定。陰影框 64防止將薄膜沈積在基板2之邊緣部分處。加熱器62安裝 在下部電極60内部。 反應氣體供應線路70與腔10耗合且將反應氣體供應至腔 中。反應氣體供應線路70通過上部電極34之中心部分。 擋板36位於上部電極34下方以擴散自反應氣體供應線路70 供應之反應氣體。 排出口 52處於腔10中且使用外部排出系統排出反應空間 A中之反應氣體。 該薄膜處理裝置隨半導體器件及液晶顯示器件大小增加 而存在問題。隨半導體器件及液晶顯示器件大小增加，薄 膜處理裝置變大。因此，氣體分配板30變大且因此過重。 圖2為說明氣體分配板30在先前技術薄膜處理裝置中在 重量下下沉之狀態之橫截面圖。 參看圖2，氣體分配板30之中心部分由於氣體分配板30 之重量之緣故而下沉。因此’氣體分配板30之中心部分與 基板2之間的距離Dcen小於氣體分配板3〇之邊緣部分與基 板2之間的距離Dedg。因此，反應氣體之密度根據位置而 變化，且薄膜處理裝置之製程一致性降級。因此，在基板 136286.doc 200930832 2上沈積及蝕刻薄膜不均勻，且薄膜之均勻性降級。 【發明内容】 因此，本發明針對一種大體上避免由於先前技術之侷限 及缺點而產生之問題中之一或多者的薄膜處理裝置。 本發明之優點為提供一種可改良薄膜之均勻性及製造效 率之薄膜處理裝置。 以下描述内容中將陳述本發明之額外特徵及優點，且將 自描述内容中部分瞭解該等額外特徵及優點，或者可藉由 實踐本發明來學習該等額外特徵及優點。將借助本文之書 面描述及申請專利範圍以及附圖中明確指出之結構及方法 來達成及獲得本發明之目的及其它優點。 為達成此等及其它優點並根據如所體現及廣義上描述之 本發明之目的，一種薄膜處理裝置包含：腔，其包含反應 空間；上部電極’其在該腔中且包含圍繞該上部電極之中 心部分之複數個通孔；氣體分配板，其在上部電極下方且 包含分別對應於該複數個通孔之複數個接納孔；耦合器 件，其通過該通孔並插入至該接納孔中以將上部電極與氣 體分配板耦合；下部電極，其上放置基板，且面向氣體分 配板，反應空間在下部電極與氣體分配板之間；密封部 分，其在上部電極之頂部表面處並圍繞該通孔，該密封部 分為Ο形環；以及至少一冷卻部分，其包含冷卻路徑以冷 卻該密封部分。 在另一態樣中，一種薄膜處理裝置包含：腔，其包含反 應空間；上部電極，其在該腔中且包含圍繞該上部電極之 136286.doc 200930832 中心部分之複數個通孔；氣體分配板，其在上部電極下方 且包含分別對應於該複數個通孔之複數個接納孔，以及複 數個注入孔；耦合器件，其通過該通孔並插入至該接納孔 中以將上部電極與氣體分配板耦合，該耦合器件包含可拆 卸之第一至第三組件；以及下部電極，其上放置基板，且 面向氣體分配板’反應空間在下部電極與氣體分配板之 ‘間。 ©在另一態樣中，一種薄膜處理裝置包含：腔，其包含反 應空間；上部電極，其在該腔中，該上部電極之底部表面 具有圓頂形狀；氣體分配板，其在上部電極下方且包含複 數個注入孔；基板放置部分，其上放置基板，且面向氣體 分配板’反應空間在基板放置部分與氣體分配板之間；以 及反應氣體供應線路’其通過上部電極之中心部分並將反 應氣體供應至上部電極與氣體分配板之間的空間。 在另一態樣中，一種薄膜處理裝置包含：腔，其包含反 ❹ 應空間；上部電極’其在該腔中，該上部電極之底部表面 具有第一圓頂形狀；氣體分配板，其在上部電極下方且包 含複數個注入孔’該氣體分配板之底部表面具有第二圓頂 形狀’第一圓頂形狀之曲率與第二圓頂形狀之曲率相同； 基板放置部分，其上放置基板，且面向氣體分配板，反應 空間在基板放置部分與氣體分配板之間；以及反應氣體供 應線路’其通過上部電極之中心部分並將反應氣體供應至 上部電極與氣體分配板之間的空間。 在另一態樣中’ 一種薄膜處理裝置包含：腔，其包含反 136286.doc -10- 200930832 應空間；上部電極，其在該腔中，該上部電極之底部表面 在上部電極之邊緣部分至中心部分之方向上具有第一凸起 階梯，氣體分配板，其在上部電極下方且包含複數個注入 孔，該氣體分配板之底部表面具有對應於第一凸起階梯之 第二凸起階梯；基板放置部分，其上放置基板且面向氣 體分配板，反應空間在基板放置部分與氣體分配板之間 以及反應氣體供應線路，其通過上部電極之中心部分並將 反應氣體供應至上部電極與氣體分配板之間的空間。 應瞭解，以上大體描述及以下詳細描述兩者均為例示性 及闡釋性的，且希望提供對所主張之本發明之進一步闡 釋。 【實施方式】 現將具體參考本發明之所說明之實施例，該等實施例在 附圖中說明。 圖3為說明根據本發明第一實施例之薄膜處理裝置之橫 截面圖’且圖4為放大圖3之區域B之視圖。 參看圖3及4’根據第一實施例之薄膜處理裝置包含腔 110。 反應空間A在處理腔110中且為用以執行薄膜處理製程之 密封空間。反應空間A在上部電極134與下部電極1 60之 間。上部電極134可被供應有RF高電壓，且下部電極160可 被供應有偏壓。下部電極160可充當上面放置基板1〇2之卡 盤或基板置換部分，且上下移動。 氣體分配板130在上部電極134下方並與上部電極134耦 136286.doc 200930832 合。氣體分配板130包含複數個注入孔132，反應氣體經由 該等注入孔132注入至反應空間A中《反應空間人可由面向 彼此之氣體分配板130及下部電極160界定。排出口 152安 裝在腔110之底部處並使用例如馬達泵之排出系統來排出 反應氣體。 上部電極134藉由第一耦合器件142在上部電極134及氣 ' 體分配板130之邊緣部分處與氣體分配板130耦合。第一搞 ❹ 合器件142可為螺栓。第一耦合器件142可通過氣體分配板 130並插入至上部電極134之耦合孔138中。因此氣體分 配板130與上部電極134耦合。 反應氣體供應線路170安裝在腔11〇之上部部分處。反應 氣體供應線路170通過上部電極134之中心部分。擋板172 位於反應氣體供應線路17〇下方並擴散自反應氣體供應線 路1 70供應之反應氣體。舉例而言，擋板丨72位於上部電極 134與氣體分配板130之間的緩衝空間中，且反應氣體供應 ❹ 線路170將反應氣體供應至緩衝空間。供應至緩衝空間之 反應氣體均勻地分配並藉由注入孔132注入至反應空間A 中。 陰影框164固持基板102之邊緣部分並固定基板1〇2。此 外’陰影框164可防止將薄膜沈積在基板1〇2之邊緣部分 處》 上部電極134藉由第二耦合器件12〇在氣體分配板13〇及 上部電極134之中心部分周圍進一步與氣體分配板13〇耦 s此接近上部電極134及氣體分配板13〇之中心部分之耦 136286.doc •12· 200930832 合可防止氣體分配板130過重。此外，第二耦合器件12〇可 連同第一耦合器件142將氣體分配板U〇與上部電極134牢 固地福合。 第二耦合器件120可為螺栓。上部電極134可具有通孔 135，使第二耦合器件120穿過通孔135，且氣體分配板I” 可具有接納孔133。因此，第二耦合器件12〇穿過通孔135 • 並插入至接納孔U3中，使得氣體分配板13〇在其中心部分 周圍與上部電極134耦合，且可防止氣體分配板13〇之中心 ^ 冑分在重量下下沉。 通孔135可具有第一及第二子孔135&及U5b。第一孔 135a可接納第二耦合器件12〇之軸12〇&且具有第一直徑， 且第二孔135b可接納第二耦合器件12〇之頭部12〇b且具有 第二直徑。第二直徑大於第一直徑。因此，頭部i2〇b未插 入至第一子孔12〇&中並安置於瓶頸部分上，且軸120a通過 第一子孔135a。頭部12〇b可位於第二子孔13讣中且不暴露 φ 於上部電極U4之頂部表面上。 軸120a可具有螺紋，且 且可在接納孔133周圍形成合入軸Liquid helium devices, semiconductor devices (e.g., solar cells), etc. are manufactured by various processes for substrates. For example, a thin film deposition process and a photolithography process (4) and a process are performed several times to form a circuit pattern on a substrate and an additional process such as a cleaning process, an adhesion process, a dicing process, and the like are performed. The /product process and the etching process are performed in a cavity type film processing apparatus. Recently, a PECVD (plasma enhanced chemical vapor deposition) device in which a reactive gas is excited in a plasma using an RF (Radio Frequency) high voltage is widely used as one of film processing devices. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a prior art thin film processing apparatus. Referring to Fig. 1, a film processing apparatus includes a chamber in which a reaction space 8 is contained. A substrate 2 is placed in a chamber 10, a reaction gas flows into the reaction space A and is activated, and a film treatment is performed. The upper electrode 34, the gas distribution plate 30, and the lower electrode 60 are located in the cavity 10. An RF voltage is applied to the upper electrode 34. The gas distribution plate 3 is below the upper electrode 34 and the reaction gas is injected into the reaction space a 136286.doc 200930832 via a plurality of injection holes 32. The gas distribution plate 30 and the upper electrode 34 are coupled at their edge portions by a coupling device 42. The lower electrode 60 faces the gas distribution plate 3〇 and is supplied with a bias voltage. Further, the lower electrode 60 serves as a chuck on which the substrate 2 is placed, and the lower electrode 60 moves up and down. The substrate 2 is fixed at the edge portion of the substrate 2 by a hatched frame 64. The shaded frame 64 prevents deposition of a film at the edge portion of the substrate 2. The heater 62 is mounted inside the lower electrode 60. The reaction gas supply line 70 is consumed by the chamber 10 and supplies the reaction gas into the chamber. The reaction gas supply line 70 passes through a central portion of the upper electrode 34. The baffle 36 is positioned below the upper electrode 34 to diffuse the reaction gas supplied from the reaction gas supply line 70. The discharge port 52 is in the chamber 10 and discharges the reaction gas in the reaction space A using an external discharge system. This thin film processing apparatus has problems in that the size of semiconductor devices and liquid crystal display devices increases. As the size of semiconductor devices and liquid crystal display devices increases, the film processing apparatus becomes large. Therefore, the gas distribution plate 30 becomes large and thus excessive. Fig. 2 is a cross-sectional view showing a state in which the gas distribution plate 30 sinks under weight in the prior art film processing apparatus. Referring to Figure 2, the central portion of the gas distribution plate 30 sinks due to the weight of the gas distribution plate 30. Therefore, the distance Dcen between the central portion of the gas distribution plate 30 and the substrate 2 is smaller than the distance Dedg between the edge portion of the gas distribution plate 3 and the substrate 2. Therefore, the density of the reaction gas varies depending on the position, and the process consistency of the film processing apparatus is degraded. Therefore, the film is deposited and etched unevenly on the substrate 136286.doc 200930832 2, and the uniformity of the film is degraded. SUMMARY OF THE INVENTION Accordingly, the present invention is directed to a thin film processing apparatus that substantially obviates one or more of the problems of the prior art. It is an advantage of the present invention to provide a film processing apparatus which can improve the uniformity and manufacturing efficiency of a film. The additional features and advantages of the present invention are set forth in the description which follows. The objectives and other advantages of the invention will be realized and attained by the <RTIgt; To achieve these and other advantages and in accordance with the teachings of the present invention as embodied and broadly described, a thin film processing apparatus includes a chamber including a reaction space, an upper electrode 'in the chamber and including a surrounding electrode a plurality of through holes in the central portion; a gas distribution plate below the upper electrode and including a plurality of receiving holes respectively corresponding to the plurality of through holes; a coupling device passing through the through hole and inserted into the receiving hole to The upper electrode is coupled to the gas distribution plate; the lower electrode is provided with the substrate disposed thereon, and faces the gas distribution plate, the reaction space is between the lower electrode and the gas distribution plate; and the sealing portion is at the top surface of the upper electrode and surrounds the through hole The sealing portion is a Ο-shaped ring; and at least one cooling portion including a cooling path to cool the sealing portion. In another aspect, a thin film processing apparatus includes: a cavity including a reaction space; an upper electrode in the cavity and including a plurality of through holes surrounding a central portion of the upper electrode 136286.doc 200930832; a gas distribution plate Under the upper electrode and including a plurality of receiving holes respectively corresponding to the plurality of through holes, and a plurality of injection holes; a coupling device passing through the through hole and inserted into the receiving hole to distribute the upper electrode and the gas The plate coupling, the coupling device includes detachable first to third components; and a lower electrode on which the substrate is placed, and facing the gas distribution plate 'reaction space' between the lower electrode and the gas distribution plate. In another aspect, a thin film processing apparatus includes: a chamber including a reaction space; an upper electrode in which a bottom surface of the upper electrode has a dome shape; and a gas distribution plate below the upper electrode And comprising a plurality of injection holes; a substrate placement portion on which the substrate is placed, and facing the gas distribution plate 'reaction space between the substrate placement portion and the gas distribution plate; and a reaction gas supply line' which passes through the central portion of the upper electrode and The reaction gas is supplied to a space between the upper electrode and the gas distribution plate. In another aspect, a thin film processing apparatus includes: a cavity including a reaction space; an upper electrode 'in the cavity, a bottom surface of the upper electrode having a first dome shape; and a gas distribution plate at a plurality of injection holes below the upper electrode and a bottom surface of the gas distribution plate having a second dome shape. The curvature of the first dome shape is the same as the curvature of the second dome shape; the substrate placement portion on which the substrate is placed, And facing the gas distribution plate, the reaction space is between the substrate placement portion and the gas distribution plate; and the reaction gas supply line' passes through the central portion of the upper electrode and supplies the reaction gas to the space between the upper electrode and the gas distribution plate. In another aspect, a thin film processing apparatus includes: a cavity including a reverse 136286.doc -10-200930832 space; an upper electrode in which the bottom surface of the upper electrode is at an edge portion of the upper electrode a central convex portion having a first convex step, a gas distribution plate below the upper electrode and including a plurality of injection holes, the bottom surface of the gas distribution plate having a second convex step corresponding to the first convex step; a substrate placement portion on which a substrate is placed and faces a gas distribution plate, a reaction space between the substrate placement portion and the gas distribution plate, and a reaction gas supply line that passes through a central portion of the upper electrode and supplies a reaction gas to the upper electrode and gas distribution The space between the boards. It is to be understood that both the foregoing general description DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the embodiments illustrated embodiments Fig. 3 is a cross-sectional view showing a thin film processing apparatus according to a first embodiment of the present invention, and Fig. 4 is an enlarged view of a region B of Fig. 3. Referring to Figures 3 and 4', the thin film processing apparatus according to the first embodiment includes a cavity 110. The reaction space A is in the processing chamber 110 and is a sealed space for performing a thin film processing process. The reaction space A is between the upper electrode 134 and the lower electrode 1 60. The upper electrode 134 may be supplied with an RF high voltage, and the lower electrode 160 may be supplied with a bias voltage. The lower electrode 160 can serve as a chuck or substrate replacement portion on which the substrate 1〇2 is placed, and moves up and down. The gas distribution plate 130 is below the upper electrode 134 and is coupled to the upper electrode 134 136286.doc 200930832. The gas distribution plate 130 includes a plurality of injection holes 132 through which the reaction gas is injected into the reaction space A. "The reaction space persons can be defined by the gas distribution plates 130 and the lower electrodes 160 facing each other. A discharge port 152 is installed at the bottom of the chamber 110 and discharges the reaction gas using, for example, a discharge system of a motor pump. The upper electrode 134 is coupled to the gas distribution plate 130 at the edge portions of the upper electrode 134 and the gas distribution plate 130 by the first coupling means 142. The first engaging device 142 can be a bolt. The first coupling device 142 can pass through the gas distribution plate 130 and be inserted into the coupling hole 138 of the upper electrode 134. Therefore, the gas distribution plate 130 is coupled to the upper electrode 134. The reaction gas supply line 170 is installed at an upper portion of the chamber 11''. The reaction gas supply line 170 passes through a central portion of the upper electrode 134. The baffle 172 is located below the reaction gas supply line 17 and diffuses the reaction gas supplied from the reaction gas supply line 170. For example, the baffle cymbal 72 is located in the buffer space between the upper electrode 134 and the gas distribution plate 130, and the reactive gas supply ❹ line 170 supplies the reaction gas to the buffer space. The reaction gas supplied to the buffer space is uniformly distributed and injected into the reaction space A through the injection hole 132. The shaded frame 164 holds the edge portion of the substrate 102 and fixes the substrate 1〇2. Further, the 'shaded frame 164 prevents the film from being deposited at the edge portion of the substrate 1' 2". The upper electrode 134 is further separated from the gas distribution plate by the second coupling means 12 around the central portion of the gas distribution plate 13 and the upper electrode 134. 13 〇 coupling s is close to the coupling of the central portion of the upper electrode 134 and the gas distribution plate 13 136286.doc • 12· 200930832 to prevent the gas distribution plate 130 from being overweight. In addition, the second coupling device 12A can securely integrate the gas distribution plate U〇 with the upper electrode 134 along with the first coupling device 142. The second coupling device 120 can be a bolt. The upper electrode 134 may have a through hole 135 through which the second coupling device 120 passes, and the gas distribution plate I" may have a receiving hole 133. Therefore, the second coupling device 12 passes through the through hole 135 and is inserted into The receiving hole U3 is such that the gas distribution plate 13 is coupled around the central portion thereof with the upper electrode 134, and prevents the center of the gas distribution plate 13 from sinking under weight. The through hole 135 can have the first and the first Two sub-holes 135 & and U5b. The first hole 135a can receive the shaft 12 〇 & of the second coupling device 12 且 and has a first diameter, and the second hole 135 b can receive the head 12 of the second coupling device 12 〇 And having a second diameter. The second diameter is larger than the first diameter. Therefore, the head i2〇b is not inserted into the first sub-hole 12〇& and is disposed on the bottle neck portion, and the shaft 120a passes through the first sub-hole 135a The head 12〇b may be located in the second sub-hole 13讣 and not exposed to φ on the top surface of the upper electrode U4. The shaft 120a may have a thread and may form a splicing axis around the receiving hole 133.
處。此外，壓蓋部分153可覆蓋通孔 136286.doc 200930832 135並藉由第三耦合器件ι55與上部電極134耦合。壓蓋板 153可為板類型且由金屬材料製成。由於密封部分ι5〇及壓 蓋部分153牢固地密封通孔135，所以可防止反應氣體穿過 通孔135洩漏。 如上所述’第二耦合器件120將氣韹分配板130與上部電 極134在其中心部分周圍耦合。因此，儘管氣體分配板13〇 之大小增加，亦可防止氣體分配板丨3 〇下沉。At the office. Further, the cap portion 153 may cover the through hole 136286.doc 200930832 135 and be coupled to the upper electrode 134 by the third coupling device ι55. The gland plate 153 may be of a plate type and made of a metal material. Since the sealing portion ι5 〇 and the cap portion 153 securely seal the through hole 135, the reaction gas can be prevented from leaking through the through hole 135. The second coupling device 120 couples the gas distribution plate 130 and the upper electrode 134 around its central portion as described above. Therefore, although the size of the gas distribution plate 13 is increased, the gas distribution plate 丨3 〇 can be prevented from sinking.
圖5為說明根據本發明第二實施例之薄膜處理裝置之橫 截面圖，圖6為放大圖5之區域C之視圖，且圖7為說明根據 本發明第二實施例之薄膜處理裝置之冷卻部分的透視圖。 第二實施例之裝置類似於第一實施例之裝置。因此，可省 略對與第一實施例之部件類似之部件的闡釋。 薄膜處理製程可在高溫條件，例如攝氏（。〔〕）約35〇度至 450度下執行。因此，薄膜處理器件之組件可在高溫條件 下党到影響。由具有高熔點之金屬材料製成之組件在其它 組件可能受到影響之同時可幾乎不受影響。舉例而言使 用〇形環之密封部分可在高溫下損壞，且因此密封部分之 壽命縮短。因Λ，將頻繁地用㈣封部分更換該密封部 分。由於此更換之緣故，裝置之操作速率減小，且因此製 造效率減小。 根據第二實施例之薄膜處理裝置可進一步包含冷卻部分 以冷卻密封部分。 冷卻部分280可位於上部電極134之頂部表面上並圍繞密 封部分㈣及壓蓋部分153。冷卻部分彻可由具有高導熱 I36286.doc -14- 200930832 性質之金屬材料（例如，鋁（A1))製成。冷卻部分28〇中包含 冷卻路徑283 ’冷卻水285沿該冷卻路徑283流動且循環。 冷卻部分280可具有底部及頂部塊28〇3及28〇1)，其每一者 具有半圓形凹槽。冷卻路徑283可由所附接之底部及頂部 塊280a及280b之相對的凹槽界定。或者，冷卻部分28〇可 具有帶有半圓形凹槽之底部塊，及平坦並覆蓋底部塊之覆 蓋塊。冷卻部分280可藉由第四耦合器件與上部電極134耦 合。第四耦合器件可為螺栓，且第四耦合器件可通過冷卻 ® 部分280並插入至上部電極134之孔中。 薄膜處理裝置可包含冷卻水供應部分293。此外，薄膜 處理裝置可包含將冷卻水285自冷卻水供應部分293傳遞至 冷卻路徑285之冷卻水供應線路，以及自冷卻路徑283排出 冷卻水2 8 5之冷卻水排出線路。 控制部分291可控制冷卻水285之供應及排出。控制部分 291可電連接至冷卻部分280及冷卻水供應部分293中之至 少一者。 9 至少一冷卻部分280可組態於上部電極134之中心部分周 圍。舉例而言’在組態呈單體之一冷卻部分280之情況 下’可簡化冷卻水供應及排出線路。或者，在組態複數個 冷卻部分280之情況下，當需修理時，例如當密封部分136 或壓蓋部分134需修理時，相關冷卻部分28〇可容易與上部 電極134脫離’而其它冷卻部分280及反應氣體供應線路 170不脫離。該至少一冷卻部分280可具有圍繞反應氣體供 應線路1 70之環形形狀。複數個冷卻部分280可相對於反應 136286.doc •15- 200930832 氣體供應線路170對稱。舉例而言，當安裝兩個冷卻部分 280時，該兩個冷卻部分28〇圍繞反應氣體供應線路口〇並 相對於反應氣體供應線路17〇彼此對稱。 冷卻水285自冷卻水供應部分293輸出至腔11〇外部且隨 後沿冷卻水供應線路、冷卻路徑283及冷卻水排出線路流 . 動，且隨後排出至外部。或者，冷卻水285可再循環。舉 例而言，藉由冷卻水排出線路排出之冷卻水285穿過單獨 之冷部系統而再冷卻，或冷卻水285之溫度自然降低至所 需度數，例如在停留部分中之正常溫度。隨後，冷卻水 285再供應至冷卻水供應部分293，且隨後再次循環穿過冷 卻水供應線路、冷卻路徑283及冷卻水排出線路。 控制部分291可控制冷卻水供應部分293以調節（例如）冷 部水之量及供應冷卻水之時間。此調節可有效冷卻密封部 分150使得可防止密封部分15〇熱損壞。 更詳細而言’控制部分291可防止使上部電極丨34過冷。 φ 過冷可影響通過上部電極丨34之中心部分並向擋板172行進 之反應氣體。換言之，反應氣體可部分冷卻且變相成為粉 末°因此’粉末狀之反應氣體無法穿過注入孔132注入， 且進一步阻塞注入孔丨32。因此，藉由使用控制部分29 i , 可防止過冷。 如上所述，根據第二實施例之薄膜處理裝置使用能夠冷 卻达、封部分之冷卻部分。因此，密封部分之壽命及更換時 間增加，且因此可改良操作速率及製造效率。此外，由於 防止密封部分突然損壞，因此可防止反應氣體洩漏且可穩 】36286.doc •16· 200930832 定地維持腔中之真空條件。 可如下執行在根據第二實施例之薄膜處理裝置中在基板 102上形成薄膜之製程。將基板102放置在下部電極160 上’且隨後下部電極160向上移動使得基板1〇2距氣體分配 板130足夠距離。隨後’將rf電壓及偏壓分別供應至上部 電極134及下部電極16〇 ’將反應氣體經由反應氣體供應線 路170及注入孔132注入至反應空間a中，且在電漿中激勵 ❹ ❹ 反應氣體。電漿中之自由基起化學反應且薄膜沈積在基板 102上。當薄膜沈積在基板1 〇2上時’加熱器162散發熱以 有效地在基板102上形成薄膜。在完成薄膜之後，下部電 極160向下移動且排出口 152自腔n〇排出反應氣體。隨 後用新基板更換具有薄膜之基板1〇2。在基板1〇2上沈積 薄膜之過程中，反應空間A中之溫度可為攝氏約度至約 、度儘管在高溫條件下沈積薄膜，但由於冷卻部分28〇 冷卻密封部分136 ’因此可防止對密封部分136之熱損壞。 圖8為說明根據本發明第三實施例之薄膜處理裝置之冷 卻部分的橫截面圖。第三實施例之裝置類似於第一及第二 例之裝置。因此’可省略對與第二實施例之部件類似 之部件的闡釋。 參看圖8，第二實施例之冷卻部分可組態於上部電極⑼ 之頂部表面處。冷卻部分可句 丨丨刀J 含上部電極134之頂部表面Figure 5 is a cross-sectional view showing a thin film processing apparatus according to a second embodiment of the present invention, Figure 6 is an enlarged view of a region C of Figure 5, and Figure 7 is a view illustrating cooling of the thin film processing apparatus according to the second embodiment of the present invention. Partial perspective. The apparatus of the second embodiment is similar to the apparatus of the first embodiment. Therefore, the explanation of the components similar to those of the first embodiment can be omitted. The film processing process can be carried out under high temperature conditions, such as Celsius (.), from about 35 to 450 degrees. Therefore, the components of the thin film processing device can be affected by the party under high temperature conditions. A component made of a metal material having a high melting point may be hardly affected while other components may be affected. For example, the sealing portion using the 〇-shaped ring can be damaged at a high temperature, and thus the life of the sealing portion is shortened. Because of this, the seal portion will be replaced frequently with a (four) seal. Due to this replacement, the operating speed of the device is reduced, and thus the manufacturing efficiency is reduced. The film processing apparatus according to the second embodiment may further include a cooling portion to cool the sealing portion. The cooling portion 280 may be located on the top surface of the upper electrode 134 and surround the sealing portion (4) and the gland portion 153. The cooling portion can be made of a metal material having a high thermal conductivity of I36286.doc -14- 200930832 (for example, aluminum (A1)). The cooling portion 28A includes a cooling path 283' along which the cooling water 285 flows and circulates. Cooling portion 280 can have bottom and top blocks 28〇3 and 28〇1), each of which has a semi-circular recess. Cooling path 283 may be defined by the attached bottom and the opposing grooves of top blocks 280a and 280b. Alternatively, the cooling portion 28A may have a bottom block with a semi-circular recess and a cover block that is flat and covers the bottom block. The cooling portion 280 can be coupled to the upper electrode 134 by a fourth coupling device. The fourth coupling device can be a bolt and the fourth coupling device can pass through the cooling ® portion 280 and be inserted into the aperture of the upper electrode 134. The film processing apparatus may include a cooling water supply portion 293. Further, the film processing apparatus may include a cooling water supply line that transfers the cooling water 285 from the cooling water supply portion 293 to the cooling path 285, and a cooling water discharge line that discharges the cooling water 285 from the cooling path 283. The control portion 291 can control the supply and discharge of the cooling water 285. The control portion 291 can be electrically connected to at least one of the cooling portion 280 and the cooling water supply portion 293. 9 At least one cooling portion 280 can be disposed around a central portion of the upper electrode 134. For example, 'in the case of configuring one of the cooling portions 280 of the unit', the cooling water supply and discharge lines can be simplified. Alternatively, in the case of configuring a plurality of cooling portions 280, when repairs are required, such as when the sealing portion 136 or the gland portion 134 needs to be repaired, the associated cooling portion 28A can be easily disengaged from the upper electrode 134 while other cooling portions are required. 280 and the reactive gas supply line 170 are not detached. The at least one cooling portion 280 may have an annular shape surrounding the reaction gas supply line 170. The plurality of cooling portions 280 are symmetrical with respect to the reaction 136286.doc • 15 - 200930832 gas supply line 170. For example, when the two cooling portions 280 are installed, the two cooling portions 28 are symmetrical around the reaction gas supply line port and relative to the reaction gas supply line 17A. The cooling water 285 is output from the cooling water supply portion 293 to the outside of the chamber 11 and is followed by the cooling water supply line, the cooling path 283, and the cooling water discharge line, and then discharged to the outside. Alternatively, the cooling water 285 can be recycled. For example, the cooling water 285 discharged through the cooling water discharge line is re-cooled through a separate cold system, or the temperature of the cooling water 285 is naturally lowered to a desired degree, such as a normal temperature in the dwell portion. Subsequently, the cooling water 285 is again supplied to the cooling water supply portion 293, and then circulated again through the cooling water supply line, the cooling path 283, and the cooling water discharge line. The control portion 291 can control the cooling water supply portion 293 to adjust, for example, the amount of cold water and the time for supplying the cooling water. This adjustment effectively cools the sealing portion 150 so that the sealing portion 15 can be prevented from being thermally damaged. In more detail, the control portion 291 can prevent the upper electrode 丨 34 from being too cold. The supercooling of φ affects the reaction gas that passes through the central portion of the upper electrode crucible 34 and travels toward the baffle 172. In other words, the reaction gas can be partially cooled and disguised into a powder. Therefore, the powdery reaction gas cannot be injected through the injection hole 132, and the injection port 32 is further blocked. Therefore, by using the control portion 29 i , overcooling can be prevented. As described above, the film processing apparatus according to the second embodiment uses a cooling portion capable of cooling and sealing the portion. Therefore, the life of the sealing portion and the replacement time are increased, and thus the operation rate and the manufacturing efficiency can be improved. In addition, since the sealing portion is prevented from being suddenly damaged, the reaction gas can be prevented from leaking and being stabilized. 36286.doc •16· 200930832 The vacuum condition in the chamber is maintained. The process of forming a thin film on the substrate 102 in the thin film processing apparatus according to the second embodiment can be performed as follows. The substrate 102 is placed on the lower electrode 160 and then the lower electrode 160 is moved upward such that the substrate 1〇2 is at a sufficient distance from the gas distribution plate 130. Then, the rf voltage and the bias voltage are respectively supplied to the upper electrode 134 and the lower electrode 16', and the reaction gas is injected into the reaction space a via the reaction gas supply line 170 and the injection hole 132, and the reaction gas is excited in the plasma. . The free radicals in the plasma react chemically and the film is deposited on the substrate 102. When the film is deposited on the substrate 1 〇 2, the heater 162 is heated to effectively form a film on the substrate 102. After the film is completed, the lower electrode 160 moves downward and the discharge port 152 discharges the reaction gas from the chamber n〇. The substrate 1〇2 having the film is then replaced with a new substrate. In the process of depositing a thin film on the substrate 1〇2, the temperature in the reaction space A may be from about 10,000 degrees Celsius to about 10,000 degrees. Although the film is deposited under high temperature conditions, the cooling portion 28 〇 cools the sealing portion 136 ′ The heat of the sealing portion 136 is damaged. Figure 8 is a cross-sectional view showing a cooling portion of a film processing apparatus according to a third embodiment of the present invention. The apparatus of the third embodiment is similar to the apparatus of the first and second examples. Therefore, the explanation of the components similar to those of the second embodiment can be omitted. Referring to Fig. 8, the cooling portion of the second embodiment can be configured at the top surface of the upper electrode (9). The cooling portion can be squeegee J including the top surface of the upper electrode 134
處之冷卻凹槽389，及懕苔A ^ ^ v 壓盖邛刀338，且冷卻凹槽389及壓 盍邛为338可界定冷卻路徑38 因此’冷卻水385沿上部 1：極134中之冷卻路徑383流 壓蓋部分338可平坦，且 136286.docCooling groove 389, and canola A ^ v gland knives 338, and cooling groove 389 and pressure 338 can define cooling path 38 so cooling water 385 is cooled along upper 1 : pole 134 Path 383 flow cap portion 338 can be flat and 136286.doc
200930832 壓蓋部分338之頂部表面可與上部電極134之頂部表面齊 平。呈單體之一冷卻水路徑3 83可形成於上部電極134中並 圍繞所有密封部分150及所有壓蓋部分153。或者，類似於 圖7之複數個冷卻路徑383(例如，兩個冷卻路徑383)可形成 於上部電極134中，且冷卻路徑383可圍繞相關密封部分 150及壓蓋部分153。 以與第二實施例類似之方式，冷卻水385自冷卻水供應 部分供應並隨後沿冷卻水供應線路、冷卻路徑383及冷卻 水排出線路流動。 圖9為說明根據本發明第四實施例之薄膜處理裝置之橫 截面圖’ i圖10為放大根據本發明第四實施例之薄膜處理 裝置之合器件的視圖。第四實施例之薄膜處理裝置 類似於帛第二實施例之裝置。因此，可省略對與第一 至第三實施例之部件類似之部件的闡釋。 第四實施例之第二耦合器件42〇可具有與第一實施例之 結構不同之結構。參看圖9及10,第二耦合器件420可包含 可拆卸組件，例如托架424、軸及螺母。 轴422可具有圓柱形桿形狀。轴似可包含頂部及底部末 ，戸刀^每纟具有螺紋〇底部末端部分可具有直徑 其]於頂部與底部末端部分之間的中心部分之直徑 D。此外，頂部末端部分可具有小於軸422之中心部分之直 徑D的直徑。盔彻而一 < ^ 3，頂部末端部分可具有與底部末端 4分相同之直搜D1。 轴422之頂部末端部分可插 入至螺母426中 螺母426可 136286.doc 200930832 具有在螺母42 6之内表面處之螺旋凹槽416a，且頂部末端 部分之螺紋可合入螺旋凹槽426a中。螺母426之外徑可大 於軸422之直徑D。 軸422之底部末端部分可插入至托架424中。托架424可 在頂部處包含接納部分424 a且在底部處包含突起部分 424b。接納部分424a可具有處於接納部分424a内部之螺孔 428。底部末端部分可合入螺孔428中。突起部分4241)可插 入至氣體分配板130之接納孔中，且突起部分424b之直徑 可小於接納部分424a之外徑。 底部末端部分可具有在底部末端部分之螺旋絲上方之突 起423。至少一突起423可徑向組態於轴422周圍。 圖11A及11B為說明在根據本發明第四實施例之薄膜處 理裝置中藉由第二耦合器件將氣體分配板與上部電極耦合 之橫截面圖。 參看圖11A，氣體分配板130之頂部表面具有接納孔 433 ’且上部電極134具有對應於接納孔433之通孔435。螺 旋凹槽可形成在接納孔422周圍。 托架424插入至接納孔433中。舉例而言，托架424之突 起部分（圖10之424b)之螺紋可合入接納孔433之螺旋凹槽 中。因此’托架424固定至氣體分配板130中。 在托架424與氣體分配板13〇耦合之後，轴422通過通孔 135並插入至托架424之接納部分（圖1〇之424叻之螺孔（圖1〇 之428)中’且軸422與托架424耦合。 當軸422經驅動至托架424中時，突起423可充當指示器 136286.doc -19· 200930832 以通知工人軸422是否充分插入至托架424中。舉例而言， 在突起423不存在之情況下，工人無法辨別轴422插入至托 架424中多深，且轴422可能插入至托架424中處於大於或 小於所需深度處。此導致耦合之氣體分配板130與上部電 極134之間的距離依據工人之技術而變化，且因此工人難 以達成耦合之氣體分配板130與上部電極134之間的所需距 離。然而，在突起423存在之情況下，當工人將軸422緊固 至托架424中時，突起423通知工人軸422充分插入至托架 424中，因為突起423由托架424之頂部表面阻檔而無法進 一步行進。因此，工人將軸422插入至托架424中直至突起 423由托架424阻擋為止，且因此，軸422容易地在正確深 度處插入至托架424中。因此，可容易地達成耦合之氣體 分配板130與上部電極134之間的所需距離。 此外，轴422之底部末端部分可具有比軸422之中心部分 之直徑（圖10之D)小的直徑（圖10之D')。由於軸422之底部 末端部分與托架424耦合，因此可減小托架424之大小。由 於托架424位於反應氣體擴散之緩衝空間處，因此托架424 可能干擾緩衝空間中反應氣體之流動。減小托架424之大 小可使對反應氣體之流動之干擾最小化。因此，較佳地， 軸422之底部末端部分可具有比軸422之中心部分之直徑小 的直徑。轴422之底部末端部分可具有達可允許程度之直 徑，使得緩衝空間中反應氣體之流動不受托架424干擾。 參看圖11B，在軸422與托架424耦合之後，螺母426與軸 422耦合。舉例而言，螺母426在順時針方向或逆時針方向 136286.doc -20- 200930832 上旋轉以與轴422之頂部末端部分螺合。螺母426之外徑可 大於通孔435之直徑。因此，螺母426懸垂在上部電極134 ❹ 之頂部表面上。螺母426可根據緊固深度來調節氣體分配 板130與上部電極134之間的距離。舉例而言，當螺母426 自轴422之頂部被較深地驅動時，螺母426與托架424之間 的距離減小，且因此氣體分配板13〇與上部電極之間的 距離減小。當螺母426自軸422之頂部被較淺地驅動時螺 母426與托架424之間的距離增大，且因此氣體分配板13〇 與上部電極134之間的距離增大。 隨後，壓蓋部分453可覆蓋螺母126以密封第二耦合器件 420。壓蓋部分453可防止乓應氣體穿過通孔435茂漏且 可維持真空條件。 壓蓋部分453可為螺帽。或者，第一至第三實施例之壓 蓋部分及密封部分可用於覆蓋螺母126，且冷卻部分可用 於冷卻密封部分。 第二耦合器件420可由鋁（A丨）製成，且第二耦合器件“Ο 可經陽極化處理。 如上所述，第二耦合器件將氣體分配板與上部電極在中 心部分周圍牢固地耦合。因&，可防止氣體分配板之中心 4分在重量下下沉。此外，第二耦合器件包含可拆卸組 件。因此，以第二耦合器件耦合之氣體分配板與上部電極 之磨損可最小化。此外，由於軸在托架已插人至氣體分配 板中之狀態下與托架耦合，因此軸不直接接觸氣體分配 板。因此，可防止接納孔之微粒及磨損（其可能在將軸與 136286.doc 200930832 氣體分配板直接耦合之情況下發生）。由於第-知 一柄兮器件 之組件可拆卸，因此可容易地更換損壞之組件。 圖12為說明根據本發明第五實施例之薄膜處理 衣置之橫 截面圖。第五實施例之薄膜處理裝置類似於第—至第四實 施例之薄膜處理裝置。因此，可省略對與第一至第四實施 例之部件類似之部件的闡釋。為闡釋之簡潔性，圖Η展示 • 第五實施例之薄膜處理裝置之簡要結構且省略第五實施例 之薄膜處理裝置的一些組件。 ❹ ~ 參看圖12,氣體分配板130藉由第二耦合器件52〇與上部 電極134耦合。第二耦合器件52〇可具有與第一至第四實施 例之第二耦合器件相同之結構。此外，第一至第四實施例 之一者之冷卻部分可用於第五實施例之薄膜處理裝置中。 氣體分配板130之中心部分可被向上拉起’且氣體分配 板130可具有弓形狀。隨基板1〇2之大小增大下部電極 160亦可在下部電極160之邊緣部分處下沉。因此，下部電 ❹ 極160與氣體分配板13〇之間的距離可能並不整體—致，且 因此無法達成薄膜之均勻性。為使此距離一致，使用第二 耗合器件520將氣體分配板13〇向上拉起。 較佳地，上部電極134之底部表面51〇具有反映氣體分配 板130之弓形狀之弓或圓頂形狀。在上部電極134總體平坦 之情況下’緩衝空間之高度（即，氣體分配板130與上部電 極134之間的距離）可能不一致。此外，在薄膜處理製程期 間上°卩電極134之中心部分可能由於高溫條件及真空壓 力之緣故而垂下，且因此，緩衝空間之高度可能不一致。 136286.doc -22- 200930832 緩衝空間之此高I變化導致緩衝空間中反冑氣體之密度不 均勻。為使上部電極134與氣體分配板13〇之間的距離— 致，上部電極134具有弓形狀之底部表面510。氣體分配板 130可總體具有相同之厚度。上部電極134之頂部表面可為 平坦的，且上部電極134之厚度可在上部電極134之中心部 分至底部部分之方向上增加。或者，上部電極之頂部 表面可具有其它形狀。 ❹ 上部電極134之弓形狀可考慮上部電極134之中心部分之 下沉及下部電極16〇之邊緣部分之下沉而設計。換言之， 儘管氣體分配板130被向上拉起以維持氣體分配板13〇與上 部電極134之底部表面51〇之間的距離，但考慮下部電極 160之下沉，而將上部電極134之底部表面51〇設計成維持 氣體分配板130與下部電極16〇之間的距離一致。 然而，由於由施加至上部電極134之RF電壓引發之電場 在下部電極160之中心部分處通常較強，因此考慮此現 Q 象’氣體分配板130與下部電極160之間的距離可能不一 致。 在氣體分配板130被向上拉起之情況下，當下部電極16〇 具有平坦狀態時，氣體分配板130之底部表面與下部電極 160之間的距離在下部電極160之邊緣部分至中心部分之方 向上增加。舉例而言，氣體分配板13()之底部表面與下部 電極160之間的距離可線性增加。 或者，氣體分配板130可不具有整體一致厚度，舉例而 言，氣體分配板130之底部表面可具有弓或圓頂形狀，且 136286.doc -23- 200930832 氣體分配板130之厚度可在氣體分配板i3〇之中心部分至邊 緣部分之方向上增加。當氣體分配板13〇具有弓形狀之底 部表面時’乱體分配板13〇可不被向上拉起。然而，第二 耦合器件520固持氣體分配板13〇使其免於下沉，並使氣體 分配板130與上部電極134之間的距離一致。較佳地，氣體 分配板130之弓形狀之底部表面具有與上部電極134之弓形 狀之底部表面510相同的曲率。因此，氣體分配板13〇之底 部表面與上部電極134之底部表面510之間的距離可整體一 ® 致。 如上所述’上部電極之底部表面具有對應於氣體分配板 之形狀的形狀’且因此氣體分配板與上部電極之間的距離 一致。因此’可達成基板上薄膜之均勻性。 圖13為說明根據本發明第六實施例之薄膜處理裝置之橫 截面圖。第六實施例之薄膜處理裝置類似於第一至第五實 施例之薄膜處理裝置。因此’可省略對與第一至第五實施 ❺例之部件類似之部件的闡釋。為闡釋之簡潔性，圖丨3展示 第六實施例之薄膜處理裝置之簡要結構且省略第六實施例 之薄膜處理裝置的一些組件。 參看圖13，氣體分配板130可具有在氣體分配板13〇之邊 •緣部分至中心部分之方向上之凸起階梯62〇 ^此外，上部 電極134之底部表面可具有根據氣體分配板13〇之凸起階梯 610的凸起階梯。因此，可使氣體分配板13〇與上部電極 134之間的距離一致。氣體分配板1 3〇之階梯620可相對於 反應氣體供應線路170對稱’且氣體分配板13〇之底部表面 136286.doc -24- 200930832 之階梯610可相對於反應氣體供應線路17〇對稱。 由於氣體分配板130具有階梯且上部電極134具有對應於 氣體分配板130之階梯620的階梯狀底部表面，因此氣體分 配板130之底部表面與上部電極！ 34之底部表面之間的距離 整體一致。當氣體分配板130具有總體相同厚度時，氣體 • 分配板130之頂部表面與上部電極134之底部表面之間的距 • 離可為一致。 當下部電極160之頂部表面平坦時，氣體分配板130之底 部表面與下部電極160之間的距離根據氣體分配電極13〇之 階梯形狀而在下部電極160之邊緣部分至中心部分之方向 上增加。舉例而言，氣體分配板13〇之底部表面與下部電 極1 60之間的距離可非線性增加。 上部電極134具有分別對應於階梯61〇之區域。因此，上 部電極134之底部表面與下部電極ι6〇之間的距離至少在相 同區域中一致。此外’上部電極134之底部表面與氣體分 ❹ 配板130之底部表面之間的距離在相同區域中一致。 氣體分配板130具有分別對應於階梯620之區域。因此， 當下部電極160之頂部表面平坦時，氣體分配板丨3〇與下部 電極160之間的距離至少在相同區域中一致。 如上所述，上部電極之底部表面具有對應於氣鱧分配板 之形狀的形狀，且因此氣體分配板與上部電極之間的距離 一致。因此’可達成基板上薄膜之均勻性。 熟習此項技術者將瞭解，可在不背離本發明之精神或範 圍之情況下在本發明中作出各種修改及變化。因此，希望 136286.doc •25- 200930832 f發明涵蓋本發明之處於所附申請專利範圍及其等效物之 範圍内的修改及變化。 【圖式簡單說明】 包含附圖以提供對本發明之進一步理解且附圖併入本說 明書中並組成本說明書之一部分，附圖說明本發明之實施 例，並連同描述内容一起用於闡釋本發明之原理。附圖 中： 圖1為說明先前技術之薄膜處理裝置之橫截面圖； 圖2為說明氣體分配板3〇在先前技術薄膜處理裝置中在 重量下下沉之狀態的橫截面圖； 圖3為說明根據本發明第一實施例之薄媒處理裝置之橫 截面圖； 圖4為放大圖3之區域B之視圖； 圖5為說明根據本發明第二實施例之薄膜處理裝置之橫 截面圖； 圖6為放大圖5之區域C之視圖； 圖7為說明根據本發明第二實施例之薄膜處理裝置之冷 卻部分的透視圖； 圖8為說明根據本發明第三實施例之薄膜處理裝置之冷 卻部分的橫截面圖； 圖9為說明根據本發明第四實施例之薄膜處理裝置之橫 截面圖； 圖10為放大根據本發明第四實施例之薄膜處理裝置之第 二耦合器件的視圖； 136286.doc -26- 200930832 囷丨1八及11B為說明在根據本發明第四實施例之薄膜處 理裝置中藉由第二耦合器件將氣體分配板與上部電極輕人 之橫截面圖； 圖12為說明根據本發明第五實施例之薄膜處理褒置之橫 截面圖；以及 圖13為說明根據本發明第六實施例之薄膜處理裝置之橫 截面圖。200930832 The top surface of the cap portion 338 may be flush with the top surface of the upper electrode 134. A cooling water path 3 83 in the form of a monomer may be formed in the upper electrode 134 and surround all of the sealing portion 150 and all of the gland portions 153. Alternatively, a plurality of cooling paths 383 (e.g., two cooling paths 383) similar to those of FIG. 7 may be formed in the upper electrode 134, and the cooling path 383 may surround the associated sealing portion 150 and the gland portion 153. In a manner similar to the second embodiment, the cooling water 385 is supplied from the cooling water supply portion and then flows along the cooling water supply line, the cooling path 383, and the cooling water discharge line. Fig. 9 is a cross-sectional view showing a thin film processing apparatus according to a fourth embodiment of the present invention. Fig. 10 is a view showing an enlarged apparatus of a thin film processing apparatus according to a fourth embodiment of the present invention. The film processing apparatus of the fourth embodiment is similar to the apparatus of the second embodiment. Therefore, the explanation of the components similar to those of the first to third embodiments can be omitted. The second coupling device 42A of the fourth embodiment may have a structure different from that of the first embodiment. Referring to Figures 9 and 10, the second coupling device 420 can include removable components such as brackets 424, shafts, and nuts. The shaft 422 can have a cylindrical rod shape. The shaft may comprise a top and a bottom end, and the boring tool has a threaded 〇 bottom end portion may have a diameter D which is a diameter of a central portion between the top and bottom end portions. Further, the top end portion may have a diameter smaller than the diameter D of the central portion of the shaft 422. The helmet is completely < ^ 3, and the top end portion may have the same direct search D1 as the bottom end 4 points. The top end portion of the shaft 422 can be inserted into the nut 426. The nut 426 can be 136286.doc 200930832 has a helical groove 416a at the inner surface of the nut 42 6 and the thread of the top end portion can fit into the helical groove 426a. The outer diameter of the nut 426 can be greater than the diameter D of the shaft 422. The bottom end portion of the shaft 422 can be inserted into the bracket 424. The bracket 424 can include a receiving portion 424a at the top and a raised portion 424b at the bottom. The receiving portion 424a can have a threaded bore 428 that is internal to the receiving portion 424a. The bottom end portion can be fitted into the screw hole 428. The protruding portion 4241) can be inserted into the receiving hole of the gas distribution plate 130, and the diameter of the protruding portion 424b can be smaller than the outer diameter of the receiving portion 424a. The bottom end portion may have a projection 423 above the spiral wire at the bottom end portion. At least one protrusion 423 can be radially disposed about the shaft 422. 11A and 11B are cross-sectional views showing the coupling of a gas distribution plate and an upper electrode by a second coupling means in a film processing apparatus according to a fourth embodiment of the present invention. Referring to Fig. 11A, the top surface of the gas distribution plate 130 has a receiving hole 433' and the upper electrode 134 has a through hole 435 corresponding to the receiving hole 433. A spiral groove may be formed around the receiving hole 422. The bracket 424 is inserted into the receiving hole 433. For example, the thread of the protruding portion of the bracket 424 (424b of Fig. 10) can be fitted into the spiral groove of the receiving hole 433. Therefore, the bracket 424 is fixed to the gas distribution plate 130. After the bracket 424 is coupled to the gas distribution plate 13A, the shaft 422 passes through the through hole 135 and is inserted into the receiving portion of the bracket 424 (the screw hole (Fig. 1 428) of Fig. 1 且) and the shaft 422 Coupled with the bracket 424. When the shaft 422 is driven into the bracket 424, the protrusion 423 can act as an indicator 136286.doc -19. 200930832 to inform the worker whether the shaft 422 is fully inserted into the bracket 424. For example, In the absence of the protrusion 423, the worker cannot discern how deep the shaft 422 is inserted into the bracket 424, and the shaft 422 may be inserted into the bracket 424 at a greater or lesser depth than desired. This results in the coupled gas distribution plate 130 and The distance between the upper electrodes 134 varies depending on the skill of the worker, and thus it is difficult for the worker to achieve the desired distance between the coupled gas distribution plate 130 and the upper electrode 134. However, in the presence of the protrusions 423, when the worker sets the shaft When the 422 is fastened into the bracket 424, the protrusion 423 informs the worker shaft 422 to fully insert into the bracket 424 because the protrusion 423 is blocked by the top surface of the bracket 424 and cannot travel further. Therefore, the worker inserts the shaft 422 into the bracket Rack 424 until The 423 is blocked by the bracket 424, and therefore, the shaft 422 is easily inserted into the bracket 424 at the correct depth. Therefore, the required distance between the coupled gas distribution plate 130 and the upper electrode 134 can be easily achieved. Further, the bottom end portion of the shaft 422 may have a smaller diameter (D' of FIG. 10) than the diameter of the central portion of the shaft 422 (D of FIG. 10). Since the bottom end portion of the shaft 422 is coupled to the bracket 424, The size of the bracket 424 is reduced. Since the bracket 424 is located at the buffer space where the reaction gas diffuses, the bracket 424 may interfere with the flow of the reaction gas in the buffer space. Reducing the size of the bracket 424 allows the flow of the reaction gas Preferably, the bottom end portion of the shaft 422 may have a smaller diameter than the diameter of the central portion of the shaft 422. The bottom end portion of the shaft 422 may have an allowable diameter to allow for reaction in the buffer space. The flow of gas is not disturbed by the bracket 424. Referring to Figure 11B, after the shaft 422 is coupled to the bracket 424, the nut 426 is coupled to the shaft 422. For example, the nut 426 is in a clockwise or counterclockwise direction. 136286.doc -20- 200930832 is rotated upward to be screwed with the top end portion of the shaft 422. The outer diameter of the nut 426 can be larger than the diameter of the through hole 435. Therefore, the nut 426 is suspended from the top surface of the upper electrode 134 。 nut 426 The distance between the gas distribution plate 130 and the upper electrode 134 can be adjusted according to the fastening depth. For example, when the nut 426 is driven deeper from the top of the shaft 422, the distance between the nut 426 and the bracket 424 is reduced. Small, and thus the distance between the gas distribution plate 13A and the upper electrode is reduced. The distance between the nut 426 and the bracket 424 increases as the nut 426 is driven shallower from the top of the shaft 422, and thus the distance between the gas distribution plate 13A and the upper electrode 134 increases. Subsequently, the gland portion 453 can cover the nut 126 to seal the second coupling device 420. The gland portion 453 prevents puncture gas from leaking through the through hole 435 and maintains vacuum conditions. The gland portion 453 can be a nut. Alternatively, the gland portion and the sealing portion of the first to third embodiments may be used to cover the nut 126, and the cooling portion may be used to cool the sealing portion. The second coupling device 420 can be made of aluminum (A) and the second coupling device "Ο can be anodized. As described above, the second coupling device securely couples the gas distribution plate with the upper electrode around the central portion. Because &, the center of the gas distribution plate can be prevented from sinking under weight. In addition, the second coupling device includes a detachable component. Therefore, the wear of the gas distribution plate and the upper electrode coupled by the second coupling device can be minimized. In addition, since the shaft is coupled to the bracket in a state in which the bracket has been inserted into the gas distribution plate, the shaft does not directly contact the gas distribution plate. Therefore, the particles and wear of the receiving hole can be prevented (which may be in the shaft and 136286.doc 200930832 occurs when the gas distribution plate is directly coupled.) Since the assembly of the first known shank device is detachable, the damaged component can be easily replaced. Fig. 12 is a view showing the film according to the fifth embodiment of the present invention. A cross-sectional view of the garment is processed. The film processing apparatus of the fifth embodiment is similar to the film processing apparatus of the first to fourth embodiments. Therefore, the pair and the first can be omitted. The components of the fourth embodiment are similarly illustrated. For the sake of simplicity of explanation, the schematic structure of the film processing apparatus of the fifth embodiment is shown and some components of the film processing apparatus of the fifth embodiment are omitted. 12, the gas distribution plate 130 is coupled to the upper electrode 134 by a second coupling device 52. The second coupling device 52A may have the same structure as the second coupling device of the first to fourth embodiments. The cooling portion to one of the fourth embodiments can be used in the film processing apparatus of the fifth embodiment. The central portion of the gas distribution plate 130 can be pulled up' and the gas distribution plate 130 can have a bow shape. The size of the second electrode 160 can also sink at the edge portion of the lower electrode 160. Therefore, the distance between the lower electrode 160 and the gas distribution plate 13〇 may not be uniform, and thus the film cannot be achieved. Uniformity. To make this distance uniform, the gas distribution plate 13 is pulled up using the second consuming device 520. Preferably, the bottom surface 51 of the upper electrode 134 has a gas reflecting The bow-shaped bow or dome shape of the plate 130. The height of the buffer space (i.e., the distance between the gas distribution plate 130 and the upper electrode 134) may be inconsistent in the case where the upper electrode 134 is generally flat. Further, in the film During the processing process, the central portion of the upper electrode 134 may hang down due to high temperature conditions and vacuum pressure, and therefore, the height of the buffer space may be inconsistent. 136286.doc -22- 200930832 This high I change in buffer space results in buffer space The density of the medium ruthenium gas is not uniform. To distance the upper electrode 134 from the gas distribution plate 13A, the upper electrode 134 has a bow-shaped bottom surface 510. The gas distribution plate 130 may have the same overall thickness. The top surface of the upper electrode 134 may be flat, and the thickness of the upper electrode 134 may increase in the direction from the central portion to the bottom portion of the upper electrode 134. Alternatively, the top surface of the upper electrode can have other shapes. The bow shape of the upper electrode 134 can be designed in consideration of the sinking of the central portion of the upper electrode 134 and the sinking of the edge portion of the lower electrode 16〇. In other words, although the gas distribution plate 130 is pulled up to maintain the distance between the gas distribution plate 13〇 and the bottom surface 51〇 of the upper electrode 134, the bottom surface 51 of the upper electrode 134 is considered in consideration of the lower electrode 160 sinking. The crucible is designed to maintain a uniform distance between the gas distribution plate 130 and the lower electrode 16A. However, since the electric field induced by the RF voltage applied to the upper electrode 134 is generally strong at the central portion of the lower electrode 160, it is considered that the distance between the present gas-like gas distribution plate 130 and the lower electrode 160 may not be uniform. In the case where the gas distribution plate 130 is pulled up, when the lower electrode 16 is flat, the distance between the bottom surface of the gas distribution plate 130 and the lower electrode 160 is in the direction from the edge portion to the central portion of the lower electrode 160. Increased. For example, the distance between the bottom surface of the gas distribution plate 13() and the lower electrode 160 can be linearly increased. Alternatively, the gas distribution plate 130 may not have an overall uniform thickness. For example, the bottom surface of the gas distribution plate 130 may have a bow or dome shape, and the thickness of the gas distribution plate 130 may be 136286.doc -23- 200930832. The direction from the center portion to the edge portion of the i3 turns. When the gas distribution plate 13 has a bow-shaped bottom surface, the messy distribution plate 13 can be pulled up. However, the second coupling device 520 holds the gas distribution plate 13 from sinking and makes the distance between the gas distribution plate 130 and the upper electrode 134 uniform. Preferably, the arcuate bottom surface of the gas distribution plate 130 has the same curvature as the arcuate bottom surface 510 of the upper electrode 134. Therefore, the distance between the bottom surface of the gas distribution plate 13 and the bottom surface 510 of the upper electrode 134 can be integrated as a whole. As described above, the bottom surface of the upper electrode has a shape corresponding to the shape of the gas distribution plate' and thus the distance between the gas distribution plate and the upper electrode is uniform. Therefore, the uniformity of the film on the substrate can be achieved. Figure 13 is a cross-sectional view showing a film processing apparatus according to a sixth embodiment of the present invention. The film processing apparatus of the sixth embodiment is similar to the film processing apparatuses of the first to fifth embodiments. Therefore, the explanation of the components similar to those of the first to fifth embodiment will be omitted. For the sake of simplicity of the explanation, Fig. 3 shows a schematic configuration of the film processing apparatus of the sixth embodiment and omits some components of the film processing apparatus of the sixth embodiment. Referring to Fig. 13, the gas distribution plate 130 may have a convex step 62 in the direction of the side of the gas distribution plate 13 from the edge portion to the central portion. Further, the bottom surface of the upper electrode 134 may have a gas distribution plate 13 according to the gas distribution plate 13 The raised step of the raised step 610. Therefore, the distance between the gas distribution plate 13A and the upper electrode 134 can be made uniform. The step 620 of the gas distribution plate 1 3 can be symmetrical with respect to the reaction gas supply line 170 and the step 610 of the bottom surface 136286.doc -24 - 200930832 of the gas distribution plate 13 can be symmetric with respect to the reaction gas supply line 17 . Since the gas distribution plate 130 has a step and the upper electrode 134 has a stepped bottom surface corresponding to the step 620 of the gas distribution plate 130, the bottom surface of the gas distribution plate 130 and the upper electrode! The distance between the bottom surfaces of 34 is uniform. When the gas distribution plate 130 has an overall uniform thickness, the distance between the top surface of the gas distribution plate 130 and the bottom surface of the upper electrode 134 may be uniform. When the top surface of the lower electrode 160 is flat, the distance between the bottom surface of the gas distribution plate 130 and the lower electrode 160 increases in the direction from the edge portion to the central portion of the lower electrode 160 in accordance with the stepped shape of the gas distribution electrode 13'. For example, the distance between the bottom surface of the gas distribution plate 13 and the lower electrode 160 may increase non-linearly. The upper electrode 134 has regions corresponding to the steps 61A, respectively. Therefore, the distance between the bottom surface of the upper electrode 134 and the lower electrode ι6 一致 is at least uniform in the same region. Further, the distance between the bottom surface of the upper electrode 134 and the bottom surface of the gas separation plate 130 is uniform in the same region. The gas distribution plate 130 has regions corresponding to the steps 620, respectively. Therefore, when the top surface of the lower electrode 160 is flat, the distance between the gas distribution plate 丨3〇 and the lower electrode 160 coincides at least in the same region. As described above, the bottom surface of the upper electrode has a shape corresponding to the shape of the gas distribution plate, and thus the distance between the gas distribution plate and the upper electrode is uniform. Therefore, the uniformity of the film on the substrate can be achieved. It will be apparent to those skilled in the art that various modifications and changes can be made in the present invention without departing from the spirit and scope of the invention. Therefore, it is intended that the present invention covers the modifications and variations within the scope of the appended claims and the equivalents thereof. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings are included to provide a The principle. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view illustrating a prior art thin film processing apparatus; FIG. 2 is a cross-sectional view illustrating a state in which a gas distribution plate 3 is sunk under weight in a prior art thin film processing apparatus; 4 is a cross-sectional view of a thin film processing apparatus according to a first embodiment of the present invention; FIG. 4 is a cross-sectional view showing a thin film processing apparatus according to a second embodiment of the present invention; Figure 6 is a plan view showing a region C of the film processing apparatus according to a second embodiment of the present invention; Figure 8 is a perspective view showing a film processing apparatus according to a third embodiment of the present invention; FIG. 9 is a cross-sectional view showing a thin film processing apparatus according to a fourth embodiment of the present invention; FIG. 10 is a view enlarging a second coupling device of the thin film processing apparatus according to the fourth embodiment of the present invention; 136286.doc -26- 200930832 囷丨18 and 11B are diagrams for explaining the cross section of the gas distribution plate and the upper electrode by the second coupling means in the film processing apparatus according to the fourth embodiment of the present invention. Fig. 12 is a cross-sectional view showing a film processing apparatus according to a fifth embodiment of the present invention; and Fig. 13 is a cross-sectional view showing a film processing apparatus according to a sixth embodiment of the present invention.
【主要元件符號說明】 2 基板 10 腔 30 氣體分配板 32 注入孔 34 上部電極 36 擋板 42 耦合器件 52 排出口 60 下部電極 62 加熱器 64 陰影框 70 反應氣體供應線路 102 基板 110 腔 120 第二耦合器件 120a 轴 136286.doc •27· 200930832[Main component symbol description] 2 Substrate 10 Cavity 30 Gas distribution plate 32 Injection hole 34 Upper electrode 36 Baffle 42 Coupling device 52 Discharge port 60 Lower electrode 62 Heater 64 Shadow frame 70 Reaction gas supply line 102 Substrate 110 Cavity 120 Second Coupling device 120a shaft 136286.doc •27· 200930832
120b 頭部 130 氣體分配板 132 注入孔 133 接納孔 134 上部電極 135 通孔 135a 第一子孔 135b 第二子孔 136 凹槽 138 耦合孔 142 第一耦合器件 150 密封部分 152 排出口 153 壓蓋部分 155 第三耦合器件 160 下部電極 162 加熱器 164 陰影框 170 反應氣體供應線路 172 擋板 280 冷卻部分 280a 底部塊 280b 頂部塊 283 冷卻路徑 136286.doc -28 - 200930832120b head 130 gas distribution plate 132 injection hole 133 receiving hole 134 upper electrode 135 through hole 135a first sub hole 135b second sub hole 136 groove 138 coupling hole 142 first coupling device 150 sealing portion 152 discharge port 153 gland portion 155 Third coupling device 160 Lower electrode 162 Heater 164 Shaded frame 170 Reaction gas supply line 172 Baffle 280 Cooling section 280a Bottom block 280b Top block 283 Cooling path 136286.doc -28 - 200930832
285 冷卻水 291 控制部分 293 冷卻水供應部分 338 壓蓋部分 383 冷卻路徑 385 冷卻水 389 冷卻凹槽 420 第二耦合器件 422 轴 423 突起 424 托架 424a 接納部分 424b 突起部分 426 螺母 426a 螺旋凹槽 428 螺孔 433 接納孔 435 通孔 453 壓蓋部分 510 上部電極之底部表面 520 第二耦合器件 610 階梯 620 階梯 A 反應空間 136286.doc -29- 200930832 B 區域 C 區域 D 直徑 D, 直徑285 Cooling water 291 Control portion 293 Cooling water supply portion 338 Gland portion 383 Cooling path 385 Cooling water 389 Cooling groove 420 Second coupling device 422 Shaft 423 Protrusion 424 Bracket 424a Receiving portion 424b Protruding portion 426 Nut 426a Spiral groove 428 Screw hole 433 receiving hole 435 through hole 453 gland portion 510 bottom surface of upper electrode 520 second coupling device 610 step 620 step A reaction space 136286.doc -29- 200930832 B area C area D diameter D, diameter
136286.doc -30-136286.doc -30-
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020070118820A KR101381208B1 (en) | 2007-11-20 | 2007-11-20 | Thin film treatment apparatus |
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| TW200930832A true TW200930832A (en) | 2009-07-16 |
| TWI440736B TWI440736B (en) | 2014-06-11 |
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| TW097144924A TWI440736B (en) | 2007-11-20 | 2008-11-20 | Thin film treatment apparatus |
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| KR (1) | KR101381208B1 (en) |
| CN (1) | CN101440485B (en) |
| TW (1) | TWI440736B (en) |
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| CN102051595B (en) * | 2009-10-29 | 2013-04-03 | 无锡华润上华半导体有限公司 | Chemical vapor deposition device and spray nozzle thereof |
| CN110828351A (en) * | 2019-11-28 | 2020-02-21 | 徐州利鼎新材科技有限公司 | Cooling device is used in production of solar cell packaging film |
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| JP3595853B2 (en) * | 1999-03-18 | 2004-12-02 | 日本エー・エス・エム株式会社 | Plasma CVD film forming equipment |
| US7196283B2 (en) * | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
| KR101079224B1 (en) * | 2005-07-29 | 2011-11-03 | 엘아이지에이디피 주식회사 | Top electrode assembly and plasma processing apparatus |
| JP4593381B2 (en) * | 2005-06-20 | 2010-12-08 | 東京エレクトロン株式会社 | Upper electrode, plasma processing apparatus, and plasma processing method |
| KR101036185B1 (en) * | 2005-09-30 | 2011-05-23 | 엘아이지에이디피 주식회사 | Apparatus for processing substrate with plasma |
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| CN101440485B (en) | 2013-05-22 |
| CN101440485A (en) | 2009-05-27 |
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