CN101436639A - Method for making led encapsulation substrate - Google Patents

Method for making led encapsulation substrate Download PDF

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Publication number
CN101436639A
CN101436639A CNA2008103053683A CN200810305368A CN101436639A CN 101436639 A CN101436639 A CN 101436639A CN A2008103053683 A CNA2008103053683 A CN A2008103053683A CN 200810305368 A CN200810305368 A CN 200810305368A CN 101436639 A CN101436639 A CN 101436639A
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China
Prior art keywords
layer
led encapsulation
metal
substrate
resistance layer
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Granted
Application number
CNA2008103053683A
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Chinese (zh)
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CN101436639B (en
Inventor
林文强
王家忠
陈振重
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Yuqiao Semiconductor Co Ltd
Bridge Semiconductor Corp
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Yuqiao Semiconductor Co Ltd
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Publication of CN101436639A publication Critical patent/CN101436639A/en
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Publication of CN101436639B publication Critical patent/CN101436639B/en
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Abstract

The preparation method for a light-emitting diode package substrate includes: making a crystal lateral line layer with a complete line depending on the first side of a metal substrate to work as a pad to be electrically connected with a chip and making a solid fixing piece used for holding on the layer; finally, removing the metal substrate to complete the preparation of the package substrate. During the package procedure, the package substrate of the invention can make the preparation more easily due to the enough rigidity provided by the solid fixing piece and make the emitting area of the chip completely exposed. Therefore, the package substrate structure made in the preparation method can not only simplify the procedure, but also can effectively improve the traditional issues of the low point of lighting, discoloration of the package material and heat dissipation.

Description

The manufacture method of led encapsulation substrate
Technical field
The present invention relates to a kind of manufacture method of led encapsulation substrate, especially refer to a kind of method that begins to make base plate for packaging with metal substrate, its structure comprises that the brilliant side of putting of complete line and supports the retaining piece of usefulness, and in the end remove this metal substrate to finish basal plate making process, the light-emitting area of chip is exposed to the open air fully.
Background technology
In the making of general led encapsulation substrate, its manufacture method is begun by a core substrate usually, through modes such as boring, plated metal and the making of two-sided circuit connection pad, finishes the led encapsulation substrate of a two-sided structure.As Figure 17~shown in Figure 19, it is the generalized section of general led encapsulation substrate.At first, prepare a core substrate 50, wherein, this core substrate 50 is made of the sandwich layer 502 of a tool predetermined thickness and the metal level 501 that is formed at these sandwich layer 502 surfaces, and be formed with a plurality of plating vias 503 in this sandwich layer 502, can use the metal level 501 that connects these sandwich layer 502 surfaces.
Then forming one with etching mode on this core substrate 50 puts a brilliant side joint pad 51 and a ball side joint pad 52, carries out surface treatment 53 and moulding at last again, promptly finishes the led encapsulation substrate of traditional bilateral structure.Yet, this kind manufacture method and can't improve that the conventional package lighting angle is low, shortcomings such as encapsulating material variable color and heat radiation.
Summary of the invention
Technical problem to be solved by this invention is, at the deficiencies in the prior art, provide a kind of and not only can simplify the encapsulation flow process, and can improve effectively that the conventional package lighting angle is low, the manufacture method of the led encapsulation substrate of encapsulating material variable color and heat dissipation problem.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of manufacture method of led encapsulation substrate, and it comprises the following step at least:
(A) provide a metal substrate;
(B) go up respectively at first of this metal substrate and form one first resistance layer, and go up in second of this metal substrate and to form second resistance layer that covers shape fully, form a plurality of first openings on this first resistance layer, and appear its first of metal substrate down;
(C) form a plurality of first grooves in a plurality of first openings below;
(D) remove this first resistance layer and this second resistance layer;
(E) in a plurality of first grooves, form one first electrical barrier layer:
(F) go up respectively at first of this metal substrate and form one the 3rd resistance layer, and go up in second of this metal substrate and to form the 4th resistance layer that covers shape fully, form a plurality of second openings on the 3rd resistance layer, and appear its first of this metal substrate down;
(G) in a plurality of second openings, form a multiple layer metal layer;
(H) remove the 3rd resistance layer and the 4th resistance layer;
(I) on this multiple layer metal layer, form one first welding resisting layer, and form a plurality of the 3rd openings on this first welding resisting layer, and appear the electric connection connection pad; So far, can select to carry out step (J) or step (K);
(J) on second of this metal substrate, form one the 5th resistance layer, and on a plurality of the 3rd openings, form one first barrier layer, remove the 5th resistance layer at last, and on this first welding resisting layer, form at least one retaining piece again; So far, finish one and have metal substrate and retaining piece support and the complete single layer substrate of putting brilliant side line road of tool, form a led encapsulation substrate; Or
(K) form at least one retaining piece earlier on this first welding resisting layer, then second in this metal substrate goes up formation one the 6th resistance layer, and forms one second barrier layer on a plurality of the 3rd openings, removes the 6th resistance layer at last.So far, finish one and have metal substrate and retaining piece support and the complete single layer substrate of putting brilliant side line road of tool, form a led encapsulation substrate; And
(L) remove this metal substrate and this first electrical barrier layer.
Compared with prior art, the beneficial effect that the present invention had is: the present invention provides enough rigidity to make encapsulation procedure more simple and easy with retaining piece, and the light-emitting area of chip is exposed to the open air fully.By this, make the package substrate construction of the led encapsulation substrate method manufacturing of tool high brightness of the present invention, not only can simplify the encapsulation flow process, and can effectively improve problems such as conventional package low lighting angle, encapsulating material variable color and heat radiation.
Description of drawings
Fig. 1 is a making schematic flow sheet of the present invention.
Fig. 2 is led encapsulation substrate () generalized section of one embodiment of the invention
Fig. 3 is led encapsulation substrate (two) generalized section of one embodiment of the invention.
Fig. 4 is led encapsulation substrate (three) generalized section of one embodiment of the invention.
Fig. 5 is led encapsulation substrate (four) generalized section of one embodiment of the invention.
Fig. 6 is led encapsulation substrate (five) generalized section of one embodiment of the invention.
Fig. 7 is led encapsulation substrate (six) generalized section of one embodiment of the invention.
Fig. 8 is led encapsulation substrate (seven) generalized section of one embodiment of the invention.
Fig. 9 is led encapsulation substrate (eight) generalized section of one embodiment of the invention.
Figure 10 is led encapsulation substrate (nine) generalized section of one embodiment of the invention.
Figure 11 is led encapsulation substrate (ten) generalized section of one embodiment of the invention.
Figure 12 is led encapsulation substrate (11) generalized section of one embodiment of the invention.
Figure 13 is led encapsulation substrate (12) generalized section of one embodiment of the invention.
Figure 14 is led encapsulation substrate (13) generalized section of one embodiment of the invention.
Figure 15 is led encapsulation substrate (14) generalized section of one embodiment of the invention.
Figure 16 is package structure for LED (15) generalized section of one embodiment of the invention.
Figure 17 is to have used led encapsulation substrate () generalized section.
Figure 18 is to have used led encapsulation substrate (two) generalized section.
Figure 19 is to have used led encapsulation substrate (three) generalized section.
Label declaration:
Step (A)~(L) 11~21
Single layer substrate 3,4
Base plate for packaging 5
Metal substrate 30
First and second resistance layer 31,32
First opening 33
First groove 34
The first electrical barrier layer 35
Third and fourth resistance layer 36,37
Second opening 38
Plural number metal level 39
First welding resisting layer 40
The 3rd opening 41
The 5th resistance layer 42
First barrier layer 43
Stick together glue material 44
Retaining piece 45
Chip 46
Gold goal or tin ball or gold/ashbury metal 47
Filling sealing 48
Second conductive electrode 49
Core substrate 50
Sandwich layer 502
Metal level 501
Electroplate via 503
Put brilliant side joint pad 51
Ball side joint pad 52
Surface treatment 53
Embodiment
See also shown in Figure 1ly, be making schematic flow sheet of the present invention.As shown in the figure: the present invention is a kind of manufacture method of led encapsulation substrate, and it comprises the following steps: at least
(A) provide metal substrate 11: provide a metal substrate;
(B) form first and second resistance layer and a plurality of first opening 12: go up formation one first resistance layer for first respectively at this metal substrate, and second resistance layer that covers shape in second last formation one of this metal substrate fully, in wherein, and on this first resistance layer, forms a plurality of first openings with exposure and visualization way, to appear first of its time this metal substrate;
(C) form first groove 13: form a plurality of first grooves in a plurality of first openings below with etching mode;
(D) remove first and second resistance layer 14: remove this first resistance layer and this second resistance layer to peel off mode;
(E) form the first electrical barrier layer 15: in a plurality of first grooves, form one first electrical barrier layer with direct pressing or mode of printing, wherein, this first electrical barrier layer can be anti-welding green lacquer, epoxy resins insulation film (AjinomotoBuild-up Film, ABF), benzocyclobutene (Benzocyclo-buthene, BCB), two Maleimide triazine resin (Bismaleimide Triazine, BT), epoxy resin board (FR4, FR5), polyimides (Polyimide, PI), polytetrafluoroethylene (Poly (tetra-floroethylene), PTFE) or epoxy resin and glass fibre one of form;
(F) form third and fourth resistance layer and a plurality of second opening 16: go up formation one the 3rd resistance layer for first respectively at this metal substrate, and the 4th resistance layer that covers shape in second last formation one of this metal substrate fully, in wherein, and on the 3rd resistance layer, forms a plurality of second openings with exposure and visualization way, to appear first of its time metal substrate;
(G) form multiple layer metal layer 17: form a multiple layer metal layer in a plurality of second openings, wherein, this multiple layer metal layer can be the polymetal crust of nickel/copper, gold/copper or gold/nickel/copper;
(H) remove third and fourth resistance layer 18: remove the 3rd resistance layer and the 4th resistance layer to peel off mode;
(I) finish single layer substrate 19: on this multiple layer metal layer, form one first welding resisting layer with metal substrate support and electric property connection, and on this first welding resisting layer, forms a plurality of the 3rd openings with exposure and visualization way, with appear as with the connection pad part of chip electric connection.So far, can select to carry out step (J) or step (K);
(J) formation has metal substrate and retaining piece support and the complete single layer substrate 20a that puts brilliant side line road of tool: form one the 5th resistance layer on second of this metal substrate, and on a plurality of the 3rd openings, form one first barrier layer, remove the 5th resistance layer to peel off mode more at last, and on this first welding resisting layer, form at least one retaining piece again.So far, finish one and have metal substrate and retaining piece support and the complete single layer substrate of putting brilliant side line road of tool, to form a led encapsulation substrate, wherein, this first barrier layer can be in electronickelling gold, electroless nickel plating gold, electrosilvering or the electrotinning and selects one; Or
(K) formation has metal substrate and retaining piece support and the complete single layer substrate 20b that puts brilliant side line road of tool: form at least one retaining piece on this first welding resisting layer, then second in this metal substrate goes up formation one the 6th resistance layer, and on a plurality of the 3rd openings, form one second barrier layer, remove the 6th resistance layer to peel off mode more at last.So far, finish one and have metal substrate and retaining piece support and the complete single layer substrate of putting brilliant side line road of tool, to form a led encapsulation substrate; And
(L) form base plate for packaging 21: remove this metal substrate and this first electrical barrier layer with etching mode with retaining piece support.So far, finish one and have the base plate for packaging that retaining piece supports.
Above-mentioned steps (J) is finished the retaining piece that the brilliant rear flank of putting of complete line forms a support usefulness, and after step (K) was then finished the retaining piece of this support usefulness in advance, the beginning put brilliant side complete line and makes.Dual mode all can obtain the high brightness LED base plate for packaging of same structure.In wherein, this first~six resistance layer is the dry film of doing with applying, printing or rotary coating or the high sensing optical activity photoresistance of wet film; This first and second barrier layer can be in electronickelling gold, electroless nickel plating gold, electrosilvering or the electrotinning and selects one; This retaining piece can be metal, nonmetal or tool metal and the nonmetal material that blendes together.
Seeing also Fig. 2~shown in Figure 13, is led encapsulation substrate () generalized section that is respectively one embodiment of the invention, the led encapsulation substrate of one embodiment of the invention (two) generalized section, the led encapsulation substrate of one embodiment of the invention (three) generalized section, the led encapsulation substrate of one embodiment of the invention (four) generalized section, the led encapsulation substrate of one embodiment of the invention (five) generalized section, the led encapsulation substrate of one embodiment of the invention (six) generalized section, the led encapsulation substrate of one embodiment of the invention (seven) generalized section, the led encapsulation substrate of one embodiment of the invention (eight) generalized section, the led encapsulation substrate of one embodiment of the invention (nine) generalized section, the led encapsulation substrate of one embodiment of the invention (ten) generalized section, the led encapsulation substrate of one embodiment of the invention (11) generalized section, and led encapsulation substrate (12) generalized section of one embodiment of the invention.As shown in the figure: the present invention is in a preferred embodiment, one metal substrate 30 is provided earlier, and respectively at first of this metal substrate 30 first resistance layer 31 that goes up the high photosensitive macromolecular material of fitting, and second resistance layer 32 that is all high photosensitive macromolecular material in second last applying one of this metal substrate 30, and on this first resistance layer 31, forms a plurality of first openings 33 with exposure and visualization way, to appear first of its time metal substrate 30.Then make first groove 34 of half erosion with etching mode, wherein, this metal substrate 30 is one not contain the copper coin of dielectric layer material; This first and second resistance layer 31,32 is the dry film photoresist layer.
Remove this first and second resistance layer afterwards, and in this first groove 34, print one first electrical barrier layer 35.On first of this metal substrate 30, fit respectively subsequently the 3rd resistance layer 36 of a high photosensitive macromolecular material, and in second the 4th resistance layer 37 that goes up the high photosensitive macromolecular material of fitting of this metal substrate 30, and on the 3rd resistance layer 36, form a plurality of second openings 38 with exposure and visualization way, to appear 30 first of metal substrates under it.Form a multiple layer metal layer 39 with plating mode in a plurality of second openings 38 afterwards, wherein, this first electrical barrier layer 35 is anti-welding green lacquer; This multiple layer metal layer 39 is the two-layer polymetal crust of nickel/copper.
Then remove this third and fourth resistance layer.On this multiple layer metal layer 39, apply first welding resisting layer 40 that one deck insulation protection is used, and on this first welding resisting layer 40, form a plurality of the 3rd openings 41 with exposure and visualization way, with appear as with the connection pad part of chip electric connection.In this metal substrate 30 second goes up formation one the 5th resistance layer 42 afterwards, and forms one first barrier layer 43 on a plurality of the 3rd openings 41, and be last, removes the 5th resistance layer.In this, finish one and have metal substrate support and the complete single layer substrate 3 of putting brilliant side line road of tool.
Seeing also Figure 14 and shown in Figure 15, is to be respectively one embodiment of the invention led encapsulation substrate (13) generalized section, and one embodiment of the invention led encapsulation substrate (14) generalized section.As shown in the figure: in preferred embodiment of the present invention, then can carry out the applying of retaining piece.At first utilize one to stick together glue material 44, around this first barrier layer 43, fit one for the retaining piece 45 of metal material on this first welding resisting layer 40.In this, form one and have metal substrate and retaining piece support and the complete single layer substrate 4 of putting brilliant side line road of tool.Afterwards, again and then remove this metal substrate 30 and this first electrical barrier layer 35, and finish the base plate for packaging 5 of tool retaining piece support.
Seeing also shown in Figure 16ly, is one embodiment of the invention package structure for LED (15) generalized section.As shown in the figure: the present invention can further carry out an encapsulation procedure by above-mentioned Figure 15, to obtain the package structure for LED of high brightness.In wherein, this package structure for LED comprise gold goal that a chip 46, combines with electric connection pad as this chip 46 or tin ball or gold/ashbury metal 47, one as these chip 46 bottoms and 30 fillings of this metal substrate with sealings 48 and with tin or ashbury metal 49 as second conductive electrode beyond this chip 46.
From the above, the base plate for packaging that the present invention system begins to make from metal substrate, its structure comprises that the brilliant side of putting of complete line and supports the retaining piece of usefulness.In encapsulation process, base plate for packaging of the present invention can its retaining piece provides enough rigidity to make the encapsulation procedure can be more simple and easy, and the light-emitting area of chip is exposed to the open air fully.Therefore, use the package substrate construction of the led encapsulation substrate method manufacturing of tool high brightness of the present invention, not only can simplify the encapsulation flow process, and can improve effectively that the conventional package lighting angle is low, problem such as encapsulating material variable color and heat radiation.
In sum, the present invention is a kind of manufacture method of led encapsulation substrate, can effectively improve the various shortcoming of usefulness, in encapsulation process, can metal substrate provide enough rigidity to make the encapsulation procedure can be more simple and easy, and, the light-emitting area of chip is exposed to the open air fully in removing this metal substrate to finish encapsulation procedure at last.By this, make the led encapsulation substrate structure of the tool high brightness of made of the present invention, not only can simplify the encapsulation flow process, and can improve effectively that the conventional package lighting angle is low, problem such as encapsulating material variable color and heat radiation, and then make generation of the present invention can more progressive, more practical, more meet user institute palpus, really met the application for a patent for invention important document, the whence proposes patent application in accordance with the law.

Claims (12)

  1. The manufacture method of [claim 1] a kind of led encapsulation substrate is characterized in that comprising at least the following step:
    (A) provide a metal substrate;
    (B) go up respectively at first of this metal substrate and form one first resistance layer, and go up in second of this metal substrate and to form second resistance layer that covers shape fully, form a plurality of first openings on this first resistance layer, and appear its first of metal substrate down;
    (C) form a plurality of first grooves in a plurality of first openings below;
    (D) remove this first resistance layer and this second resistance layer;
    (E) in a plurality of first grooves, form one first electrical barrier layer;
    (F) go up respectively at first of this metal substrate and form one the 3rd resistance layer, and go up in second of this metal substrate and to form the 4th resistance layer that covers shape fully, form a plurality of second openings on the 3rd resistance layer, and appear its first of this metal substrate down;
    (G) in a plurality of second openings, form a multiple layer metal layer;
    (H) remove the 3rd resistance layer and the 4th resistance layer;
    (I) on this multiple layer metal layer, form one first welding resisting layer, and form a plurality of the 3rd openings on this first welding resisting layer, and appear the electric connection connection pad; So far, can select to carry out step (J) or step (K);
    (J) on second of this metal substrate, form one the 5th resistance layer, and on a plurality of the 3rd openings, form one first barrier layer, remove the 5th resistance layer at last, and on this first welding resisting layer, form at least one retaining piece again; So far, finish one and have metal substrate and retaining piece support and the complete single layer substrate of putting brilliant side line road of tool, form a led encapsulation substrate; Or
    (K) form at least one retaining piece earlier on this first welding resisting layer, then second in this metal substrate goes up formation one the 6th resistance layer, and forms one second barrier layer on a plurality of the 3rd openings, removes the 6th resistance layer at last.So far, finish one and have metal substrate and retaining piece support and the complete single layer substrate of putting brilliant side line road of tool, form a led encapsulation substrate; And
    (L) remove this metal substrate and this first electrical barrier layer.
  2. The manufacture method of [claim 2] led encapsulation substrate according to claim 1 is characterized in that, this metal substrate is one not contain the copper coin of dielectric layer material.
  3. The manufacture method of [claim 3] led encapsulation substrate according to claim 1 is characterized in that, this first~six resistance layer is the dry film of doing with applying, printing or rotary coating or the high sensing optical activity photoresistance of wet film.
  4. The manufacture method of [claim 4] led encapsulation substrate according to claim 1 is characterized in that, a plurality of the first~three openings form with exposure and visualization way.
  5. The manufacture method of [claim 5] led encapsulation substrate according to claim 1 is characterized in that, step (C) forms the mode of a plurality of first grooves and the mode that step (L) removes this metal substrate is etching.
  6. The manufacture method of [claim 6] led encapsulation substrate according to claim 1 is characterized in that, the mode that removes of this first~six resistance layer is for peeling off.
  7. The manufacture method of [claim 7] led encapsulation substrate according to claim 1 is characterized in that, the generation type of this first electrical barrier layer is direct pressing or printing.
  8. The manufacture method of [claim 8] led encapsulation substrate according to claim 1, it is characterized in that, this first electrical barrier layer be anti-welding green lacquer, epoxy resins insulation film, benzocyclobutene, two Maleimide-triazine resin, epoxy resin board, polyimides, polytetrafluoroethylene or epoxy resin and glass fibre one of them.
  9. The manufacture method of [claim 9] led encapsulation substrate according to claim 1 is characterized in that, the generation type of this multiple layer metal layer is for electroplating.
  10. The manufacture method of [claim 10] led encapsulation substrate according to claim 1 is characterized in that, this multiple layer metal layer is the polymetal crust that nickel/copper, gold/copper or gold/nickel/copper constitutes.
  11. The manufacture method of [claim 11] led encapsulation substrate according to claim 1 is characterized in that, this first and second barrier layer be electronickelling gold, electroless nickel plating gold, electrosilvering or electrotinning one of them.
  12. The manufacture method of [claim 12] led encapsulation substrate according to claim 1 is characterized in that, this retaining piece is metal, nonmetal or tool metal and the nonmetal material that blendes together.
CN2008103053683A 2007-11-15 2008-11-03 Method for making LED encapsulation substrate Expired - Fee Related CN101436639B (en)

Applications Claiming Priority (2)

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US99639107P 2007-11-15 2007-11-15
US60/996,391 2007-11-15

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CN101436639B CN101436639B (en) 2010-06-02

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034905B (en) * 2009-09-30 2013-02-13 陈一璋 LED (Light Emitting Diode) radiating baseplate and manufacturing method thereof
CN105612623A (en) * 2013-10-17 2016-05-25 奥斯兰姆奥普托半导体有限责任公司 Method for producing a large number of support apparatuses which can be surface-mounted, arrangement of a large number of support apparatuses which can be surface-mounted, and support apparatus which can be surface-mounted
CN108336207A (en) * 2018-01-05 2018-07-27 佛山市国星半导体技术有限公司 A kind of high reliability LED chip and preparation method thereof

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TWI420711B (en) * 2010-01-15 2013-12-21 Everlight Electronics Co Ltd Light emitting device package and fabricating method thereof

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
EP1251566A1 (en) * 2001-04-19 2002-10-23 United Test Center Inc. Low profile optically-sensitive semiconductor package
CN1474462A (en) * 2002-08-06 2004-02-11 英属维尔京群岛商钜星有限公司 Package structure of surface adhesive light -emitting diode and its producing method
CN100388483C (en) * 2005-06-10 2008-05-14 宋柏霖 Composite LED package structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034905B (en) * 2009-09-30 2013-02-13 陈一璋 LED (Light Emitting Diode) radiating baseplate and manufacturing method thereof
CN105612623A (en) * 2013-10-17 2016-05-25 奥斯兰姆奥普托半导体有限责任公司 Method for producing a large number of support apparatuses which can be surface-mounted, arrangement of a large number of support apparatuses which can be surface-mounted, and support apparatus which can be surface-mounted
CN105612623B (en) * 2013-10-17 2018-05-08 奥斯兰姆奥普托半导体有限责任公司 For method, the device for the vehicle equipment for being largely capable of surface installation and the vehicle equipment for being capable of surface installation for manufacturing the vehicle equipment for being largely capable of surface installation
CN108336207A (en) * 2018-01-05 2018-07-27 佛山市国星半导体技术有限公司 A kind of high reliability LED chip and preparation method thereof
CN108336207B (en) * 2018-01-05 2019-07-23 佛山市国星半导体技术有限公司 A kind of high reliability LED chip and preparation method thereof

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TWI357649B (en) 2012-02-01
CN101436639B (en) 2010-06-02
TW200921879A (en) 2009-05-16

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