CN218498070U - Ultra-thin high-brightness side-emitting RGB full-color light-emitting diode - Google Patents

Ultra-thin high-brightness side-emitting RGB full-color light-emitting diode Download PDF

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Publication number
CN218498070U
CN218498070U CN202222479258.7U CN202222479258U CN218498070U CN 218498070 U CN218498070 U CN 218498070U CN 202222479258 U CN202222479258 U CN 202222479258U CN 218498070 U CN218498070 U CN 218498070U
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China
Prior art keywords
chip
glass fiber
ultra
emitting diode
fiber board
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CN202222479258.7U
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Chinese (zh)
Inventor
方成应
刘杰
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Anhui Hongguan Photoelectric Technology Co ltd
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Anhui Hongguan Photoelectric Technology Co ltd
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Abstract

The utility model discloses a full-color emitting diode of RGB is sent out to ultra-thin highlight side, belong to the LED field, a full-color emitting diode of RGB is sent out to ultra-thin highlight side, including base plate and three chip, three chip flip-chip is in the front of base plate, the base plate is at least by overlapping three-layer BT glass fiber board and the four layers of conducting wire component that sets up from top to bottom, the blind hole of a plurality of looks adaptations is seted up on BT glass fiber board and the conducting wire way, the internally mounted of blind hole has with four layers of conducting wire electric connection's lead electrical pillar, the front of base plate just is located the outside of chip and is provided with epoxy, the blind hole is electroplated the pore-filling formation through the drilling with leading electrical pillar, be provided with high temperature tin cream between chip and the BT glass fiber board, high temperature tin cream passes through reflow soldering technology welding between BT glass fiber board and chip, it can realize, promote emitting diode's luminous intensity, and reduce finished product size thickness.

Description

Ultra-thin high-brightness side-emitting RGB full-color light-emitting diode
Technical Field
The utility model relates to a LED field, more specifically say, relate to a full-color emitting diode of ultra-thin highlight side luminous RGB.
Background
Up to now, a general SMD side-emitting RGB full-color LED uses a process of ink half plugging holes to connect polar circuits on the front and back sides of a glass fiber board, fixes a light-emitting RGB chip on a light-emitting surface of the front side, and connects the light-emitting chip with the polar circuit of a substrate by using a wire bonding process to realize side-emitting;
in the design of the substrate for the side-emitting RGB full-color LED in the market at present, an ink half hole plugging process is adopted, namely a middle layer of glass fiber board is used for connecting circuits on the front side and the back side in a drilling and copper deposition mode, then, ink is used for plugging holes, the situation that the packaging epoxy resin overflows to a back side polarity bonding pad through drilling is prevented, only half of the drilling holes are plugged by the ink, and half of bonding pads welded by side-emitting patches are reserved;
the manufacturing process can cause that the front drilling part can not be used as a die bonding functional area, and the size of a type selection chip is greatly limited, so that certain photoelectric characteristics can not be improved, the light emitting intensity of the light emitting diode is limited, and the ultrathin high-brightness side-emitting RGB full-color light emitting diode is provided.
SUMMERY OF THE UTILITY MODEL
1. Technical problem to be solved
To the problem that exists among the prior art, the utility model aims to provide a full-color emitting diode of RGB is sent out to ultra-thin highlight side, it can realize, promotes emitting diode's luminous intensity to reduce finished size thickness.
2. Technical scheme
In order to solve the problem, the utility model adopts the following technical proposal.
An ultrathin high-brightness side-emitting RGB full-color light-emitting diode comprises a substrate and three chips, wherein the three chips are inversely arranged on the front surface of the substrate, and the substrate at least comprises three layers of BT glass fiber boards and four layers of conducting circuits which are overlapped up and down;
a plurality of matched blind holes are formed in the BT glass fiber board and the conductive circuit, conductive columns electrically connected with the four conductive circuits are assembled inside the blind holes, and epoxy resin is arranged on the front side of the substrate and on the outer side of the chip.
Furthermore, the colors of the light emitted by the three chips are red, blue and green respectively.
Further, the blind holes and the conductive posts are formed by drilling and electroplating for filling holes.
Furthermore, a high-temperature solder paste is arranged between the chip and the BT glass fiber board.
Furthermore, the high-temperature solder paste is welded between the BT glass fiber board and the chip through a reflow soldering process.
Further, the epoxy resin is formed by mould pressing and packaging.
3. Advantageous effects
Compared with the prior art, the utility model has the advantages of:
(1) This scheme is adopted brand-new electroplating to fill in hole technology base plate, enlarges the solid crystalline region area in front, chooses for use the size bigger, and the flip chip that luminance is higher increases luminous intensity from luminous principle, and the base plate adopts multilayer BT board to carry out the pressfitting, increases positive functional region area, can promote emitting diode's luminous intensity to reduce finished product size thickness.
Drawings
FIG. 1 is a schematic view of the present invention;
FIG. 2 is a schematic sectional view of the present invention;
fig. 3 is a sectional side view of the present invention.
The reference numbers in the figures illustrate:
1. BT glass fiber board; 2. a conductive circuit; 3. a chip; 4. a conductive post; 5. and (3) epoxy resin.
Detailed Description
The technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiment of the present invention; obviously, the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention based on the embodiments of the present invention.
Example (b):
referring to fig. 1-3, an ultra-thin high-brightness side-emitting RGB full-color light emitting diode includes a substrate and three chips 3, wherein the front surface of the substrate is a die bonding functional region, the three chips 3 are flip-mounted on the front surface of the substrate, and the BT glass fiber plate 1 is flip-mounted to increase the light emitting intensity in principle;
and, the three chips 3 emit light in red, blue, green colors, respectively, to achieve the purpose of facilitating the user to distinguish.
As shown in fig. 3, the substrate at least comprises three BT glass fiber plates 1 and four conductive circuits 2, which are overlapped from top to bottom, and the three BT glass fiber plates 1 are overlapped from top to bottom, and the four conductive circuits 2 are divided into two groups and respectively arranged between two adjacent BT glass fiber plates 1, at this time, the multiple BT plates are used for pressing, so that the area of the front crystal fixing function area of the substrate is increased, the thickness of the substrate is reduced, and the size and the thickness of the finished product can be effectively reduced by matching with the inverted BT glass fiber plates 1.
A plurality of adaptive blind holes are formed in the BT glass fiber board 1 and the conductive circuits 2, and conductive columns 4 electrically connected with the four layers of conductive circuits 2 are assembled in the blind holes;
in this section, the blind vias and the conductive posts 4 are formed by drilling and filling the holes by electroplating, so as to maximize the functional area of the front circuit;
wherein, be provided with high-temperature solder paste between chip 3 and BT glass fiber board 1, high-temperature solder paste passes through the reflow soldering technology and welds between BT glass fiber board 1 and chip 3, and this part is in service, goes on through high accuracy lithography apparatus.
In order to protect the chip 3, an epoxy resin 5 is disposed on the front surface of the substrate and outside the chip 3, and the epoxy resin 5 is formed by mold encapsulation.
In conclusion, according to the technical scheme, a brand-new electroplating hole filling process substrate is adopted, the area of a front die bonding area is enlarged, a flip chip with a larger size and higher brightness is selected, the luminous intensity is increased on the light emitting principle, the substrate is laminated by adopting multiple layers of BT (BT) plates, the area of a front functional area is increased, the luminous intensity of the light emitting diode can be improved, and the size and thickness of a finished product are reduced.
The above description is only the preferred embodiment of the present invention; the scope of the present invention is not limited thereto. Any person skilled in the art should also be able to cover the protection scope of the present invention by replacing or changing the technical solution and the modified concept of the present invention within the technical scope of the present invention.

Claims (6)

1. The utility model provides a full-color emitting diode of ultra-thin highlight side-emitting RGB, includes base plate and three chip (3), its characterized in that: the three chips (3) are inversely arranged on the front surface of the substrate, and the substrate at least consists of three layers of BT glass fiber plates (1) and four layers of conducting circuits (2) which are overlapped up and down;
the BT glass fiber board is characterized in that a plurality of matched blind holes are formed in the BT glass fiber board (1) and the conductive circuits (2), conductive columns (4) electrically connected with the four layers of conductive circuits (2) are assembled inside the blind holes, and epoxy resin (5) is arranged on the front surface of the substrate and on the outer side of the chip (3).
2. The ultra-thin high-brightness side-emitting RGB full-color light-emitting diode according to claim 1, wherein: the three chips (3) emit light in red, blue and green colors respectively.
3. The ultra-thin high-brightness side-emitting RGB full-color LED according to claim 1, characterized in that: the blind holes and the conductive columns (4) are formed by drilling, electroplating and hole filling.
4. The ultra-thin high-brightness side-emitting RGB full-color LED according to claim 1, characterized in that: and a high-temperature solder paste is arranged between the chip (3) and the BT glass fiber plate (1).
5. The ultra-thin high-brightness side-emitting RGB full-color LED as claimed in claim 4, wherein: and the high-temperature solder paste is welded between the BT glass fiber board (1) and the chip (3) through a reflow soldering process.
6. The ultra-thin high-brightness side-emitting RGB full-color LED according to claim 1, characterized in that: the epoxy resin (5) is formed by mould pressing and packaging.
CN202222479258.7U 2022-09-20 2022-09-20 Ultra-thin high-brightness side-emitting RGB full-color light-emitting diode Active CN218498070U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222479258.7U CN218498070U (en) 2022-09-20 2022-09-20 Ultra-thin high-brightness side-emitting RGB full-color light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222479258.7U CN218498070U (en) 2022-09-20 2022-09-20 Ultra-thin high-brightness side-emitting RGB full-color light-emitting diode

Publications (1)

Publication Number Publication Date
CN218498070U true CN218498070U (en) 2023-02-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222479258.7U Active CN218498070U (en) 2022-09-20 2022-09-20 Ultra-thin high-brightness side-emitting RGB full-color light-emitting diode

Country Status (1)

Country Link
CN (1) CN218498070U (en)

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