CN101431030A - Method for producing semiconductor device - Google Patents
Method for producing semiconductor device Download PDFInfo
- Publication number
- CN101431030A CN101431030A CN 200710169260 CN200710169260A CN101431030A CN 101431030 A CN101431030 A CN 101431030A CN 200710169260 CN200710169260 CN 200710169260 CN 200710169260 A CN200710169260 A CN 200710169260A CN 101431030 A CN101431030 A CN 101431030A
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- packing material
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to a semiconductor device producing method. A substrate which has a plurality of electrical connection pads and covered with an insulating layer is provided, wherein, the insulating layer is provided with openings so as to expose the electrical connection pads, a filling material is formed on the insulating layer of the substrate so as to press chips on the substrate according to the spacing of a plurality of convex blocks, and the convex blocks are connected electrically to the electrical connection pads; the filling material is filled and distributed between the chips and the substrate so as to form a filling layer; the filling material which is printed in advance is used for replacing a traditional step of bottom packaging so as to reduce the production cost of the semiconductor device and simplify the production process.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, more particularly, relate to a kind of manufacture method of crystal covering type semiconductor device.
Background technology
Crystal covering type (Flip Chip) encapsulating structure is a kind of advanced person's a semiconductor packaging, it is that upside down with face down is placed on the substrate with topmost different its institute's mounted semiconductor chip that are of general routing type encapsulating structure, and by a plurality of welding blocks (Bump) weldering knot and electrically connect to substrate.Because the crystal covering type encapsulating structure does not need to use the bonding wire (Bonding Wires) that takes up space that semiconductor chip is electrically connected to substrate, therefore can make the overall package structure more compact, promote electrical quality simultaneously.
Figure 1A to 1D is the schematic diagram of the manufacture method of traditional crystal covering type encapsulating structure.
Shown in Figure 1A, substrate 1 and chip 2 at first are provided, substrate 1 has first surface 10, forms a plurality of electric connection pads 11 on first surface 10, and chip 2 has active surface 20 and non-active surface 21, and forms plurality of bump 22 on active surface 20.
Shown in Figure 1B, with the chip upside down chip 2 is engaged on the substrate 1, and projection 22 and electric connection pad 11 are electrically connected.
Shown in Fig. 1 C, carry out bottom filler (Underfilled), with between the projection between the first surface 10 of the active surface 20 of packing material 23 being inserted chip 2 and substrate 1.
Shown in Fig. 1 D, on the first surface 10 of the non-active surface 21 of chip 2 and substrate 1, form packing colloid 24 by encapsulation mold pressing (Molding), so that chip 2, projection 22 are coated on wherein with the first surface 10 of substrate 1.
Above-described crystal covering type encapsulating structure mainly is to make chip 2 directly be electrically connected to the electric connection pad 11 of substrate 1 by projection 22, so that this encapsulating structure has preferable electrical quality of connection, but the step of the bottom filler that uses in this method makes the manufacture method of this crystal covering type encapsulating structure become complicated, and then influences its manufacturing efficient.
In view of foregoing problems, Fig. 2 A to 2C has schematically shown a kind of manufacture method of simplifying the crystal covering type encapsulating structure of manufacture process.。
Shown in Fig. 2 A, substrate 3 and chip 4 at first are provided, substrate 3 has first surface 30, forms a plurality of electric connection pads 31 on first surface 30, and attaches anisotropic conductive joint glue/film (Anisotropic Conductive Paste/Film in first surface 30; ACP/ACF) to form knitting layer 32, have conducting particles 321 in the knitting layer 32, chip 4 has active surface 40 and non-active surface 41, forms plurality of bump 42 on active surface 40.
Shown in Fig. 2 B, with the chip upside down chip 4 is engaged to substrate 3, and makes chip lug 42 be electrically connected to the electric connection pad 31 of substrate 3 by conducting particles 321.
Shown in Fig. 2 C, form packing colloid 43 on the non-active surface 41 that is pressed in chip 4 by Encapsulation Moulds and the first surface 30 of substrate 3, so that chip 4, projection 42 are coated on wherein with the first surface 30 of substrate 3.
Though aforesaid manufacture method can utilize anisotropic conductive joint glue/film to omit the step of bottom sealing, and then simplify the manufacture process of this encapsulating structure, but the price of anisotropic conductive joint glue/film is very expensive, has increased manufacturing cost, does not therefore meet economic benefit.
In addition, when using anisotropic conductive joint glue/film,, must carry out roughened, make that so the manufacture process of this encapsulating structure is more loaded down with trivial details the first surface 30 of substrate 3 in order to strengthen the associativity of chip 4 and substrate 3.
Therefore, how to promote electrical connection between chip and the substrate, simplify the manufacture process of encapsulating structure and reduce manufacturing cost, become and demand the problem thought deeply now urgently.
Summary of the invention
The shortcoming of prior art in view of the above, one of purpose of the present invention is to provide a kind of manufacture method of simplifying the semiconductor device of manufacture process.
Another object of the present invention is to provide a kind of manufacture method that makes the semiconductor device of a large amount of volume productions of semiconductor device.
A further object of the present invention is to provide a kind of manufacturing method for making that reduces material cost and meet the semiconductor device of economic benefit.
For achieving the above object, the invention provides a kind of manufacture method of semiconductor device, comprise: a substrate and a chip are provided, this substrate has first surface, on first surface, form a plurality of electric connection pads and be coated with an insulating barrier, this insulating barrier has opening to expose described electric connection pad, and described chip has active surface and non-active surface, forms projection on active surface; On the substrate first surface, packing material is set; And described chip of pressing and substrate, and described projection and electric connection pad are electrically connected, and described packing material is distributed between chip and the substrate, to form packed layer.
Also can between the non-active surface of the surface of described insulating barrier and chip, form packing colloid in the aforementioned manufacture method, with coating chip and projection; Described pressing mode can be one of them of hot pressing and hot sound wave pressing; Described packing material is bottom filler/chip attach material (Printable B-stage underfill/die attached material) of printable B stage, can utilize such as modes such as printing, spraying, spin coatings it is coated on the substrate first surface, and add the characteristic of thermosetting B stage (B-stage).
The mode of printing of described packing material is included in template is set on the substrate insulating layer, this template has at least two perforates to expose surface of insulating layer, these two perforates lay respectively at the both sides of described opening, in perforate, print packing material, then remove this template, form packing material on insulating barrier, and expose described insulating barrier opening, this packing material of baking of heating again is B stage (B-Stage).The centre of one side of the adjacent described opening of this packing material forms towards the tip of this opening projection so that described packing material can be mobile towards described opening direction rapidly.
Another set-up mode of described packing material is that a template is set on described substrate insulating layer, and this template has perforate to expose this insulating barrier and the electric connection pad that is arranged in this insulating barrier opening; In perforate, print packing material; And remove this template, so that be formed with packing material on this insulating barrier with in this opening, and this packing material of baking of heating is the B stage.
The preferable application mode of above-described manufacture method is to be applied to make Double Data Rate dynamic random access memory (Double Data Rate Dynamic Random AccessMemory; DDR DRAM), particularly DDR III and DDR IV.
In addition, described packing material is bottom filler/chip attach material of printable B stage, has tackness preferably, when therefore described chip and substrate mutually combine, the first surface of substrate need not roughening or planarization specially, can have associativity preferably by this packing material between chip and the substrate.
Print this packing material in advance, when chip and substrate mutually combine, this packing material fills up the space between substrate and the chip, and solidify out into packed layer, just can omit the step of bottom filler, and this packing material is more cheap than anisotropic conductive joint glue/film, therefore can reduces the material cost of making semiconductor device, and can be applicable to the volume production semiconductor device, and then meet economic benefit.
Description of drawings
Figure 1A to 1D is the schematic diagram of existing manufacturing method for semiconductor device;
Fig. 2 A to 2C is the schematic diagram of another existing manufacturing method for semiconductor device;
Fig. 3 A to 3H is the schematic diagram of first embodiment of manufacturing method for semiconductor device of the present invention; And
Fig. 4 A to 4D is the schematic diagram of second embodiment of manufacturing method for semiconductor device of the present invention.
The primary clustering symbol description
1,3,5,5a substrate
10,30,50,50a first surface
11,31,51,51a electric connection pad
2,4,6,6a chip
20,40,60,60a active surface
21,40,61 non-active surfaces
22,42,62,62a projection
23 packing materials
32 knitting layers
321 conducting particless
52,52a insulating barrier
520,520a opening
53,53a template
530,530a perforate
54,54a fills material
55,55a packed layer
63 packing colloids
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by the content that this specification discloses.
Fig. 3 A to 3H is the schematic diagram of first embodiment of manufacturing method for semiconductor device of the present invention.
As shown in Figure 3A, the manufacture method of semiconductor device of the present invention comprises provides a substrate 5, this substrate 5 has first surface 50, on first surface 50, form a plurality of electric connection pads 51, and on first surface 50, being coated with an insulating barrier 52, this insulating barrier 52 is formed with opening 520 to expose electric connection pad 51.
Shown in Fig. 3 B, a template 53 is set on insulating barrier 52, this template 53 forms at least two perforates 530 to expose the surface of insulating barrier 52, and these two perforates 530 lay respectively at the both sides of opening 520.
Shown in Fig. 3 C, printing packing material 54 in perforate 530, this packing material 54 can be bottom filler/chip attach material of printable B stage.
Shown in Fig. 3 D, 3E, remove template 53, on insulating barrier 52, form packing material 54, and expose base openings 520, with packing material 54 baking of heating, make it form B-Stage, wherein packing material 54 lays respectively at the both sides of opening 520, and the centre of a side of packing material 54 adjacent apertures 520 forms the tip 540 towards opening 520 projections.
Shown in Fig. 3 F, a chip 6 is provided, this chip 6 has active surface 60 and non-active surface 61, is provided with projection 62 at active surface 60 with respect to the position of the electric connection pad 51 of described substrate 5.
Shown in Fig. 3 G, chip 6 and substrate 5 are laminated, the pressing mode can be one of them of hot pressing (thermo compression) or hot sound wave pressing (thermosonic compression), and projection 62 and electric connection pad 51 are bonded with each other, simultaneously packing material 54 be under pressure with heat effect under, because most advanced and sophisticated 540 towards opening 520 projections, therefore packing material 54 is subjected to most advanced and sophisticated 540 guiding, and be subjected to the capillarity of fluid and the compressing of chip 6, most of packing material 54 can flow rapidly towards opening 520 directions, and fill up opening 520, and the air that is arranged in opening 520 can not be provided with the direction discharge of packing material 54 respectively relatively from opening 520, material 54 to be filled fill up opening 520 and be distributed in chip 6 and substrate 5 between coagulation forming, just form a packed layer 55.
Shown in Fig. 3 H, encapsulate the mold pressing step, at surface and the non-active surface 61 formation coating chips 6 of chip 6 and the packing colloid 63 of projection 62 of insulating barrier 52.
Above-mentioned manufacture method can be applicable to make Double Data Rate dynamic random access memory (Double Data Rate Dynamic Random Access Memory; DDR DRAM), particularly DDR III and DDR IV.
Owing to be to electrically connect between chip 6 and the substrate 5, so the two has preferable electric connection by projection 62 and electric connection pad 51.In addition, when chip 6 combined with substrate 5, the packing material 54 that is subjected to 5 compressings of chip 6 and substrate can fill up the space between chip 6 and the substrate 5, and coagulation forming is a packed layer 55, therefore can omit the step of bottom filler, thereby simplify the manufacture process of semiconductor device and reduce cost.
Described packing material 54 is B stage bottom filler/chip attach material, this material has preferable tackness, therefore do not need extra first surface 50 to carry out roughened to substrate 5, and by means of the packing material 54 with preferable tackness, substrate 5 can have preferable associativity with chip 6.In addition, packing material 54 is comparatively cheap than anisotropic conductive joint glue/film.
Fig. 4 A to 4D is the schematic diagram of second embodiment of manufacturing method for semiconductor device of the present invention, and present embodiment and previous embodiment are roughly the same, and main difference is the setting area difference of packing material.
Shown in Fig. 4 A, the first surface 50a of substrate 5a has and similar electric connection pad 51a of first embodiment and insulating barrier 52a, insulating barrier 52a is formed with opening 520a to expose electric connection pad 51a, one template 53a is set on insulating barrier 52a, and template 53a is formed with perforate 530a with part surface that exposes insulating barrier 52a and the electric connection pad 51a that is positioned at opening 520a.
Shown in Fig. 4 B, printing packing material 54a in template perforate 530a is so that it is distributed on the part surface of insulating barrier 52a and among the base openings 520a.
Shown in Fig. 4 C, remove template 53a, and the baking of heating (being the B-Stage baking) packing material 54a.
Shown in Fig. 4 D, the chip and the substrate 5a that active surface 60a are had projection 62a are laminated, and projection 62a and electric connection pad 51a are bonded with each other, this moment, pressurized, the packing material 54a that is heated will be filled between chip 6a and the substrate 5a, and coagulation forming is packed layer 55a.Can encapsulate mold pressing (not shown) subsequently.
In sum, bottom filler/chip attach material of printable B stage that utilization of the present invention is coated with in advance is as filling material 54,54a, packing material 54,54a can simplify the required complicated step of use bottom filler step in the existing flip chip structure, and the price of packing material 54,54a is also cheap than employed anisotropic conductive joint glue/film in the existing flip chip structure, therefore, than existing flip chip structure, the present invention can be applicable to a large amount of volume productions and has more economic benefit.
Above-described specific embodiment, only be to be used to illustrate characteristics of the present invention and effect, but be not to be used to limit practical range of the present invention, do not breaking away under the above spirit of the present invention and the technical scope, the disclosed content of any utilization and the equivalence finished changes and modify all still should be claim and contains.
Claims (10)
1, a kind of manufacture method of semiconductor device comprises:
Substrate and chip are provided, this substrate has first surface, and first surface has a plurality of electric connection pads and is coated with an insulating barrier, and this insulating barrier is formed with opening to expose described electric connection pad, described chip has active surface and non-active surface, and active surface is provided with plurality of bump;
On described substrate first surface, form packing material; And
Described chip of pressing and substrate electrically connect described projection and electric connection pad, and described packing material are distributed between chip and the substrate form packed layer, thereby obtain semiconductor device.
2, the manufacture method of semiconductor device as claimed in claim 1 also comprises, at surface and the non-active surface formation coating chip of described chip and the packing colloid of projection of described insulating barrier.
3, the manufacture method of semiconductor device as claimed in claim 1, wherein, the generation type of described packing material comprises:
One template is set on the insulating barrier of described substrate first surface, and this template is formed with at least two perforates to expose described surface of insulating layer, and these two perforates lay respectively at the both sides of described opening;
In described perforate, print packing material; And
Remove described template, on described insulating barrier, form packing material, and expose described base openings, this packing material of baking of heating again.
4, the manufacture method of semiconductor device as claimed in claim 3, wherein, described packing material becomes the B stage through the baking of heating.
5, the manufacture method of semiconductor device as claimed in claim 3, wherein, the centre of a side of the adjacent described opening of described packing material forms towards the tip of this opening projection, so that this packing material can flow to this opening direction rapidly.
6, the manufacture method of semiconductor device as claimed in claim 1, wherein, the generation type of described packing material comprises:
One template is set on described insulating barrier, and this template is formed with perforate with part surface that exposes described substrate insulating layer and the electric connection pad that is arranged in described base openings;
In described perforate, print packing material; And
Remove described template, on described insulating barrier and in the described base openings, form packing material, this packing material of baking of heating again.
7, the manufacture method of semiconductor device as claimed in claim 5, wherein, described packing material becomes the B stage through the baking of heating.
8, the manufacture method of semiconductor device as claimed in claim 1, wherein, described pressing mode can be one of them of hot pressing and hot sound wave pressing.
9, the manufacture method of semiconductor device as claimed in claim 1, wherein, described packing material is bottom filler/chip attach material of printable B stage.
10, the manufacture method of semiconductor device as claimed in claim 1, wherein, described semiconductor device is changed to the Double Data Rate dynamic random access memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710169260 CN101431030B (en) | 2007-11-07 | 2007-11-07 | Method for producing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710169260 CN101431030B (en) | 2007-11-07 | 2007-11-07 | Method for producing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101431030A true CN101431030A (en) | 2009-05-13 |
| CN101431030B CN101431030B (en) | 2010-08-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710169260 Expired - Fee Related CN101431030B (en) | 2007-11-07 | 2007-11-07 | Method for producing semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524465A (en) * | 2020-06-11 | 2020-08-11 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111524466A (en) * | 2020-06-11 | 2020-08-11 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111564107A (en) * | 2020-06-11 | 2020-08-21 | 厦门通富微电子有限公司 | Preparation method of display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1255866C (en) * | 2002-11-04 | 2006-05-10 | 矽统科技股份有限公司 | Procedure of encapsulating composite crystal and device |
| JP2007173724A (en) * | 2005-12-26 | 2007-07-05 | Alps Electric Co Ltd | Circuit module |
-
2007
- 2007-11-07 CN CN 200710169260 patent/CN101431030B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524465A (en) * | 2020-06-11 | 2020-08-11 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111524466A (en) * | 2020-06-11 | 2020-08-11 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111564107A (en) * | 2020-06-11 | 2020-08-21 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111564107B (en) * | 2020-06-11 | 2022-06-21 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111524465B (en) * | 2020-06-11 | 2022-06-21 | 厦门通富微电子有限公司 | Preparation method of display device |
| CN111524466B (en) * | 2020-06-11 | 2022-06-21 | 厦门通富微电子有限公司 | Preparation method of display device |
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| Publication number | Publication date |
|---|---|
| CN101431030B (en) | 2010-08-11 |
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