CN101425468A - 经过涂敷的引线框 - Google Patents
经过涂敷的引线框 Download PDFInfo
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- CN101425468A CN101425468A CNA2007101848060A CN200710184806A CN101425468A CN 101425468 A CN101425468 A CN 101425468A CN A2007101848060 A CNA2007101848060 A CN A2007101848060A CN 200710184806 A CN200710184806 A CN 200710184806A CN 101425468 A CN101425468 A CN 101425468A
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Abstract
在其引线指状件上具有有机化合物涂层的引线框防止锡和焊剂在贴片之后污染引线指状件。所述涂层在引线接合之前被去除。所述涂层允许形成可靠的第二接合(导线和引线指状件之间的接合),减少了不牢固的可能性并改善了导线剥离强度。
Description
发明领域
本发明涉及集成电路(IC)的封装,并且尤其涉及涂敷引线框的引线以防止管芯安装工艺过程中引线的污染。
技术背景
在很多类型的半导体封装中,尤其是用于大功率器件的半导体封装中,集成电路管芯通过使用焊膏被贴附到引线框的管芯垫板(diepad),且然后通过使用导线使管芯上的焊盘电学地连接到引线框的引线指状件(lead finger)。使用焊膏是为了增强可靠性和热传导性。然而,当管芯被贴附到管芯垫板上时,例如在回流操作中,可能在引线指状件上沉积一些焊剂,导致在引线指状件上形成锡云(tin cloud)。焊剂和锡云可能危害导线和引线指状件之间后续的接合,导致接合不牢或具有低剥离强度的接合。
能够使用焊膏将管芯贴附到引线框上而不危害后续的与引线框的引线指状件的引线接合的完整性将是十分有利的。
附图说明
当结合附图阅读时将更好地理解本发明的优选实施例的下面的详述。本发明以举例的方式阐述,且并不被附图限制,附图中相同的附图标记表示相似的元件。应当理解附图并没有按比例绘制,并且为便于理解本发明,附图被简化。
图1是根据本发明的实施例在其引线指状件上设置有涂层的引线框的放大的剖面图;
图2是图1的引线框在其上具有污染层时的剖面图;
图3是图2的引线框在从引线指状件去除涂层和污染且管芯被贴附到引线框的管芯垫板时的放大的剖面图;以及
图4是根据本发明的实施例的用于涂敷引线框的工艺的流程图。
具体实施方式
下面结合附图的详细描述意在作为本发明的当前优选实施例的描述,并不意在表示本发明可以实施的唯一形式。应当理解,相同和等同的功能可以通过被包括在本发明的精神和范围内的不同的实施例实现。附图中,贯穿所有附图,相同的附图标记用于表示相同的元素。
在一个实施例中,本发明提供了一种在贴附半导体管芯到引线框的管芯台板(die flag)之前制备引线框的方法。该方法包括以下步骤:在酸浴槽中清洗引线框;对经过酸洗的引线框执行第一水漂洗操作;中和经过漂洗的引线框上的酸;对引线框执行第二水漂洗操作;在引线框的引线指状件上沉积涂敷溶液;对涂敷后的引线框执行第三漂洗操作;以及干燥经过漂洗的涂敷后的引线框。
在另一实施例中,本发明提供了一种封装半导体集成电路的方法,包括以下步骤:提供引线框,至少在该引线框的引线指状件上具有有机化合物涂层;使用焊料将半导体集成电路贴附到引线框的管芯台板;对引线框和贴附到其上的管芯执行焊料回流操作,其中在所述回流操作中,锡和焊剂接触所述有涂层的引线指状件;以及从引线指状件去除涂层,其中去除所述涂层的步骤从引线指状件去除了锡和焊料。
现在将参考图1-3描述贴附半导体集成电路或集成电路管芯到引线框的方法。
图1示出了包括管芯台板12和多个引线指状件14的引线框10。管芯台板12一般是方形的且其大小适于接纳半导体集成电路管芯。本领域技术人员可以理解,引线指状件14可以在1、2、3或4个边环绕管芯台板12。如本领域已知的,引线框10可以由导电金属例如铜构造,并镀有例如使用镍、钯和金。引线框10可以通过切割或冲压金属箔且然后镀敷所述箔片形成。典型地,同时形成多个引线框,例如从单个箔片形成的引线框阵列。
根据本发明,引线框10的引线14包括至少位于其上表面上的涂层16。涂层16由这样的材料形成,使得涂层16与金属和/或引线框的镀层具有好的粘附性,且不允许焊料和锡(它们可能不利地沉积在引线指状件14上)渗透涂层16并接触引线指状件14。而且,涂层16容易使用涂层去除操作溶解,例如,使用焊剂清洗溶液溶解。在一个实施例中,涂层16包括有机化合物溶液,其包括5.5%的阳离子表面活性剂和93.5%的无害化合物。
图2示出了使用焊料20贴附到管芯台板12的半导体管芯18。在本领域中已知,大功率电路通常通过使用焊料被贴附到管芯台板。不幸的是,在执行贴片工艺的焊料回流操作之后,焊剂和锡沉积在引线指状件上且在引线指状件上形成锡云。图2示出了引线指状件14上的这种锡云22和焊剂24。注意,通过使用涂层16,锡云22和焊剂24至少不接触引线指状件14的上表面。即,涂层16不阻止锡云22的形成,但是涂层16使得能够在焊剂清洗操作期间去除锡云22。
为了允许例如通过引线接合工艺在导线(未示出)和引线指状件之间形成好的接合,锡云22和焊剂24在引线接合之前被去除。图3示出了从其去除了涂层16、锡云22和焊剂24的引线指状件14。涂层16、锡云22和焊剂24可以使用涂层去除工艺从引线指状件14去除。涂层去除工艺包括使用溶解涂层16的清洗溶液的清洗工艺从而去除锡云22和焊剂24。一旦涂层16、锡云22和焊剂24被从引线指状件14上去除,实施引线接合操作以在管芯18上的接合焊盘和引线指状件14的相应焊盘之间附接导线26。
现在参考图4,示出了在贴附半导体管芯到引线框的管芯台板之前制备引线框的方法。在步骤40,提供被镀敷的引线框,例如由铜形成并镀敷了镍、钯和金的引线框。如前面所讨论的,可以同时从导电金属例如从铜片或铜箔形成引线框阵列。在步骤42,引线框被装载到支撑引线框的框架中以进行后续的处理。
首先,在步骤44,引线框被浸入酸浴槽以去除氧化物。所述酸可以是盐酸且引线框可以浸渍约60秒。在引线框从酸浴槽中移开之后,在步骤46,优选地,使用去离子水执行第一水漂洗操作。在步骤48,引线框浸入到氨水中以中和任何残留的酸,且然后在步骤50,优选使用去离子水再次对引线框执行第二水漂洗操作。
在步骤52,引线框的引线指状件被涂敷了防止锡云形成和焊剂在以后的贴片工艺中污染引线框的材料。如上所述,该涂敷材料包括有机化合物的溶液,且在一个实施例中,涂层包括约95%的无害化合物和约5%的阳离子表面活性剂。然后在步骤54,优选使用去离子水再次对引线框执行第三水漂洗操作。
在步骤56,从框架中移开引线框,且在步骤58,执行干燥操作。引线框可以通过75度的氮气干燥。在干燥之后,在步骤60,实行视觉检查以检查是否存在任何缺陷。视觉检查步骤可以通过机器或操作员执行。最后,在步骤62,引线框被包装,直到它在管芯封装工艺中使用的时间为止。
从上面的讨论可以明显看出,本发明提供了一种经过涂敷的引线框以及制备对封装大功率电路尤其有用的经过涂敷的引线框的方法。在一个实施例中,经过涂敷的引线框用于形成功率方形扁平无铅(PQFN)封装设备。本发明允许导线与引线指状件之间改善的接合,并由此得到改善的整体封装可靠性。
基于阐述和描述目的给出了本发明的优选实施例的描述,但它并不期望是排他的和限制本发明到公开的形式。本领域技术人员应当理解可以对上述实施例做出改变而不偏离其宽泛的发明构思。因此,应当理解本发明不限于公开的特定实施例,而是覆盖所附权利要求定义的本发明的精神和范围内的变型。
Claims (10)
1.一种在将半导体管芯贴附到引线框的管芯台板之前制备引线框的方法,该方法包括:
在酸浴槽中清洗引线框;
对经过酸洗的引线框执行第一水漂洗操作;
中和经过漂洗的引线框上的酸;
对引线框执行第二水漂洗操作;
在引线框的引线指状件上沉积涂敷溶液;
对涂敷后的引线框执行第三水漂洗操作;以及
干燥经过漂洗的、涂敷后的引线框。
2.根据权利要求1的方法,其中所述涂敷溶液包括有机化合物溶液。
3.根据权利要求2的方法,其中所述涂敷溶液包括约95%的无害化合物和约5%的阳离子表面活性剂。
4.根据权利要求1的方法,其中在所述酸洗步骤之前,使用镍、钯和金中的至少一种对引线框进行镀敷。
5.根据权利要求1的方法,其中使用去离子水执行第一、第二和第三水漂洗操作。
6.根据权利要求1的方法,其中所述中和步骤包括将引线框浸入到氨水中。
7.一种封装半导体集成电路的方法,包括:
提供引线框,其中至少在该引线框的引线指状件上具有有机化合物涂层;
使用焊料将所述半导体集成电路贴附到引线框的管芯台板;
对引线框和贴附到其上的管芯执行焊料回流操作,其中在所述回流操作中,锡和焊剂接触所述有涂层的引线指状件;以及
从引线指状件去除涂层,其中去除所述涂层的步骤从引线指状件去除了锡和焊剂。
8.根据权利要求7的封装半导体集成电路的方法,其中所述涂层包括约95%的无害化合物和约5%的阳离子表面活性剂。
9.根据权利要求7的封装半导体集成电路的方法,进一步包括利用导线通过引线接合操作将管芯表面上的焊盘和引线指状件的相应焊盘电学地连接的步骤。
10.根据权利要求7的封装半导体集成电路的方法,其中从引线指状件去除涂层的步骤包括使用焊剂清洗溶液清洗引线框。
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