CN101414732B - 半导体激光装置和光装置 - Google Patents

半导体激光装置和光装置 Download PDF

Info

Publication number
CN101414732B
CN101414732B CN 200810179134 CN200810179134A CN101414732B CN 101414732 B CN101414732 B CN 101414732B CN 200810179134 CN200810179134 CN 200810179134 CN 200810179134 A CN200810179134 A CN 200810179134A CN 101414732 B CN101414732 B CN 101414732B
Authority
CN
China
Prior art keywords
semiconductor laser
laser device
electrode
semicondcutor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200810179134
Other languages
English (en)
Chinese (zh)
Other versions
CN101414732A (zh
Inventor
井上大二朗
别所靖之
畑雅幸
野村康彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005033099A external-priority patent/JP4568133B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN101414732A publication Critical patent/CN101414732A/zh
Application granted granted Critical
Publication of CN101414732B publication Critical patent/CN101414732B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Semiconductor Lasers (AREA)
CN 200810179134 2004-03-30 2005-03-11 半导体激光装置和光装置 Expired - Fee Related CN101414732B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2004-101489 2004-03-30
JP2004101489 2004-03-30
JP2004101489 2004-03-30
JP2005033099 2005-02-09
JP2005033099A JP4568133B2 (ja) 2004-03-30 2005-02-09 半導体レーザ装置および光装置
JP2005-033099 2005-02-09

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100539446A Division CN100454700C (zh) 2004-03-30 2005-03-11 半导体激光装置和光装置

Publications (2)

Publication Number Publication Date
CN101414732A CN101414732A (zh) 2009-04-22
CN101414732B true CN101414732B (zh) 2010-09-22

Family

ID=40595117

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200810179134 Expired - Fee Related CN101414732B (zh) 2004-03-30 2005-03-11 半导体激光装置和光装置

Country Status (2)

Country Link
JP (1) JP5194049B2 (ja)
CN (1) CN101414732B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7318615B2 (ja) * 2020-09-11 2023-08-01 トヨタ自動車株式会社 電力変換装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1316810A (zh) * 2000-02-15 2001-10-10 索尼株式会社 发光器件及使用该发光器件的光学装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151006A (ja) * 1998-11-09 2000-05-30 Sharp Corp 半導体レーザ装置
JP4074419B2 (ja) * 2000-03-14 2008-04-09 シャープ株式会社 半導体レーザ装置のワイヤボンディング方法
JP2004146722A (ja) * 2002-10-28 2004-05-20 Ricoh Co Ltd 半導体レーザ装置およびその製造方法
JP2004319915A (ja) * 2003-04-18 2004-11-11 Sharp Corp 半導体レーザー装置の製造方法および半導体レーザー装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1316810A (zh) * 2000-02-15 2001-10-10 索尼株式会社 发光器件及使用该发光器件的光学装置

Also Published As

Publication number Publication date
JP2010166096A (ja) 2010-07-29
CN101414732A (zh) 2009-04-22
JP5194049B2 (ja) 2013-05-08

Similar Documents

Publication Publication Date Title
CN100454700C (zh) 半导体激光装置和光装置
CN100461564C (zh) 半导体激光装置
US7535945B2 (en) Semiconductor laser apparatus and method of manufacturing the same
JP4671728B2 (ja) 半導体レーザ装置および光ピックアップ装置
US8098704B2 (en) Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus
CN100459333C (zh) 半导体激光器装置和它的制造方法
US7672349B2 (en) Laser diode
US8017957B2 (en) Semiconductor laser apparatus
JPH11186651A (ja) 集積型半導体発光装置
US20110188532A1 (en) Semiconductor Laser Apparatus
US20060045156A1 (en) Semiconductor laser apparatus and manufacturing method thereof
US20070025406A1 (en) Semiconductor laser array and semiconductor laser device
US20070099321A1 (en) Method for fabricating semiconductor laser device
CN101414732B (zh) 半导体激光装置和光装置
JP4844791B2 (ja) 半導体発光装置およびそれを用いた光装置
US8509278B2 (en) Light emitting device and optical apparatus using the same
JP4885434B2 (ja) 半導体レーザ素子、光ディスク装置および光伝送システム
US20080054272A1 (en) Semiconductor light-emitting device and method of manufacturing the same
JP2007048909A (ja) 半導体レーザ装置
JP4530768B2 (ja) 半導体レーザ装置
Lim et al. High Temperature Operation of 650nm AlGaInP Laser Diode
JP2010171285A (ja) 半導体レーザ装置およびその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100922

Termination date: 20140311