CN101393891A - Fabrication method for surface silver electrode of silicon based organic light emitting micro display device - Google Patents
Fabrication method for surface silver electrode of silicon based organic light emitting micro display device Download PDFInfo
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- CN101393891A CN101393891A CNA2008102240324A CN200810224032A CN101393891A CN 101393891 A CN101393891 A CN 101393891A CN A2008102240324 A CNA2008102240324 A CN A2008102240324A CN 200810224032 A CN200810224032 A CN 200810224032A CN 101393891 A CN101393891 A CN 101393891A
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Abstract
The invention relates to the technical field of manufacturing a silicon-based organic light emitting micro-display device, in particular to a method for preparing silver electrodes on the surface of the silicon-based organic light emitting micro-display device. In order to solve the problem in the prior art that the electrodes on the surface of the silicon-based organic light emitting micro-display device are uneven, the invention provides the method for preparing the silver electrodes on the surface of the silicon-based organic light emitting micro-display device. The method comprises the following steps: drilling through-holes below an internal drive circuit, an insulating layer, and the electrodes arranged on the pixel surface on the substratum of a silicon substrate in sequence; forming an insulating layer on the whole surface; etching after lithography so as to remove the insulating layer from the pixel area with the exposure of the through-holes; preserving insulating layers among pixels as an insulating wall for insulating; then forming a metallic silver layer on the surface; and performing the CMP technology until the insulating wall appears with the pixels isolated from each other. The invention is effective in enabling silver to be more adhesive to the insulating layer with silver not intending to fall out in the cause of performing the CMP technology; and the CMP technology provided by the invention can improve the flatness of the surface, on which the silver electrodes form a damascene-structure.
Description
Technical field
The present invention relates to silicon-based organic light-emitting micro-display device manufacturing technology field, be specifically related to the preparation method of a kind of silicon-based organic light-emitting micro-display device surface silver electrode.
Background technology
Micro display system is a kind of flat panel display, and its core is that the whole pixels that show television image or computer picture are integrated on the integrated circuit, and the common diagonal that is of a size of is less than 3in (7.62cm).The silicon-based organic light-emitting technology is a kind of implementation of little Display Technique, and its basic structure is for growing organic light emitting diode device on the CMOS silicon.Silicon-based organic light-emitting micro display chip structure as shown in Figure 1, bottom is a drive circuit 101, the present invention does not relate to driving circuit section, so this one deck is repeated no more.Pixel electrode layer 102, this layer is made up of 100 nanometer chromium and 700 Nano Silvers, as the negative electrode of Organic Light Emitting Diode.Surface organic light emitting diode device layer 103 adopts the evaporation technology preparation, and thickness is only less than 100 nanometers.The upper strata is a public anode 104, and thickness only has 20 nanometers.
Because Organic Light Emitting Diode layer and its public anode layer gross thickness are about 100 nanometers, and in drive circuit manufacturing process, because the layer dielectric planarization is incomplete, cause the groove that the hundreds of nanometer is arranged between pixel to produce easily, pixel region also has step to produce simultaneously, and as shown in Figure 2,201 and 202 is two pixel regions, 203 is the groove between the pixel, and 204 is the step that produces in the pixel region.Because the existence of these steps behind the direct growth silver electrode layer, still has these steps, when making organic luminous layer and public anode, public anode ruptures like this, and the Organic Light Emitting Diode anode can't join with ground on the pixel, to such an extent as to can't normally show.And the microelectronic technique of standard can't be eliminated these steps and groove, can only after going on foot the growth of medium, each add CMP technology, make the interface smooth as far as possible, guarantee that growth silver electrode front interface is level and smooth relatively, even yet like this, in the end, new step can be introduced again, thereby smooth requirement fully can not be reached in the etching that the silver electrode of each pixel is kept apart.
Summary of the invention
In order to solve the irregular problem of organic light-emitting micro-display device surface electrode that exists in the prior art, the invention provides the preparation method of a kind of silicon-based organic light-emitting micro-display device surface silver electrode, make surface electrode reach the requirement of growth organic luminous layer.
For achieving the above object, the technical solution used in the present invention is: the preparation method of a kind of silicon-based organic light-emitting micro-display device surface silver electrode, and its special character is: this method may further comprise the steps:
(1) on silicon-based substrate, finishes drive circuit and finish the preparation of insulating barrier;
(2) on insulating barrier, finish the etching of pixel electrode lower through-hole;
(3) growth one layer insulating after finishing through hole;
(4) to carrying out etching after the described insulating barrier photoetching, expose the pixel region surface, stay between the pixel insulating barrier as divider wall;
(5) the growth electrode layer makes the height of pixel region electrode layer be higher than divider wall;
(6) silver surface is carried out CMP technology,, all pixels are separated up to exposing divider wall.
Insulating barrier in the above-mentioned steps (2) can be a silicon dioxide, also can be the photoresist that solidifies.
The height of the divider wall in the above-mentioned steps (4) is 700 nanometers.
When above-mentioned insulating barrier was silicon dioxide, directly deposit 700 nano silicons were divider wall.
When above-mentioned insulating barrier is photoresist, need 1 micron of gluing, solidified photoresist 700 nanometers 60 minutes down at 180 degrees centigrade.
The gross thickness of the electrode layer in the above-mentioned steps (5) is 800 nanometers.
Electrode layer in the above-mentioned steps (5) is made up of 100 nanometer chromium layers and 700 nano-silver layer.
Above-mentioned 100 nanometer chromium layers adopt evaporation technology to form.
Above-mentioned 700 nano-silver layer are the silver layers that adopt evaporation technology to form by 100 nanometers, form with the silver layer that 600 nanometer sputtering technologies form.
Compared with prior art, the present invention has following beneficial effect:
The preparation method of the organic light-emitting micro-display device surface silver electrode that the present invention proposes, this method is with insulation divider wall isolate pixels, form the silver electrode surface of damascene structure, adopt CMP technology to expose divider wall, make all pixel separation from, make surface electrode smooth, satisfy the needs of luminous organic material growth; Adopt the multiple layer metal superposition process when forming the silver electrode layer, promptly evaporate one deck chromium earlier, back evaporation one deck silver, last sputter one deck silver makes silver and insulating barrier adhesion improve difficult drop-off in the CMP process.
Description of drawings
Fig. 1 is a silicon-based organic light-emitting micro display chip structure chart in the prior art;
Fig. 2 is a pixel region stepped profile structure chart in the prior art;
Fig. 3 is preparation method's block diagram of the present invention;
Fig. 4 is top layer dielectric layer and a bottom circuit structure layer after circuit production is finished among the present invention;
The structural representation of Fig. 5 after for the generation of insulating barrier among the present invention;
The structural representation of Fig. 6 after for the generation of divider wall among the present invention;
Fig. 7 is the structural representation behind the evaporation 100 nanometer chromium layers among the present invention;
Fig. 8 is the structural representation after evaporation 100 nano-silver layer among the present invention;
Fig. 9 is the structural representation after sputter 600 nano-silver layer among the present invention;
Figure 10 carries out structural representation after the CMP technology for the present invention to the silver electrode layer.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 3, Fig. 3 is preparation method's block diagram of a kind of silicon-based organic light-emitting micro-display device provided by the invention surface silver electrode, and this preparation method may further comprise the steps:
(1) on silicon-based substrate, finishes drive circuit and finish the preparation of insulating barrier;
(2) on insulating barrier, finish the etching of pixel electrode lower through-hole;
(3) growth one layer insulating after finishing through hole;
(4) to carrying out etching after the described insulating barrier photoetching, expose the pixel region surface, stay between the pixel insulating barrier as divider wall;
(5) the growth electrode layer makes the height of pixel region electrode layer be higher than divider wall;
(6) silver surface is carried out CMP technology,, all pixels are separated up to exposing divider wall.
Referring to Fig. 4～Figure 10, Fig. 4 is the structure chart of the preparation process of silicon-based organic light-emitting micro-display device surface silver electrode to Figure 10.402 is bottom circuit structure layer among Fig. 4,401 for circuit production finish after the top layer dielectric layer.After forming through hole according to step (2), again according to the insulating barrier of step (3) growth thickness 700 nanometers, as among Fig. 5 403 layers.This one deck can adopt deposit silicon dioxide to realize, perhaps also can use the photoresist after the curing.
Be step (4) afterwards,, expose the pixel region surface, stay between the pixel insulating barrier as divider wall to carrying out etching after the insulating barrier photoetching, after step is finished structure as shown in Figure 6,403 layers among Fig. 5 have become divider wall.If adopt silicon dioxide as divider wall, then need again gluing to carry out etching after the photoetching then, remove photoresist at last; And if adopt photoresist as divider wall, the photoresist that then only needs to remove pixel region after the photoetching gets final product.After removing photoresist 180 degrees centigrade to solidify after 60 minutes that photoresist solidifies highly be 700 nanometers.The key in this step is, the insulating barrier of pixel region must be removed totally, otherwise through hole can't expose fully, can not be connected with metal electrode, causes and opens circuit.
Be step (5) afterwards, this step is the key that the present invention can be successful, promptly evaporates 100 nanometer chromium layers earlier before growth silver electrode layer, as among Fig. 7 404 layers, evaporate 100 nano-silver layer again, as among Fig. 8 405 layers, last sputter 600 nano-silver layer are as among Fig. 9 406 layers.Because the adhesion of chromium and silicon dioxide is relatively good, so evaporation chromium layer can make electrode layer combine closely with layer dielectric earlier, be difficult for when CMP technology, coming off, guarantee the integrality of pixel region electrode.Simultaneously, evaporate 100 nano-silver layer, can avoid the stress of direct sputtering silver generation, also improved the tack of silver electrode as the excessive layer of silver with chromium.
Pass through step (6) at last, the silver electrode layer is carried out CMP, disconnect up to exposing divider wall, making between the electrode.406 layers is CMP silver electrode layer afterwards among Figure 10, is separated by divider wall between adjacent two pixels, and whole surface reaches the requirement of evenness.
Adopt process of the present invention, can effectively improve the evenness of organic light emission micro display chip electrode surface, make and adopt 404 and 405 two-layer resilient coatings, improve the tack of metal electrode as metal electrode, make it difficult drop-off in CMP technology, guaranteed the success of this method.Can determine the height of divider wall and the thickness of silver electrode layer according to the formed different shoulder height of different integrated circuit technologies, adopt method of the present invention can obtain smooth pixel surface.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device, it is characterized in that: this method may further comprise the steps:
(1) on silicon-based substrate, finishes drive circuit and finish the preparation of insulating barrier;
(2) on insulating barrier, finish the etching of pixel electrode lower through-hole;
(3) growth one layer insulating after finishing through hole;
(4) to carrying out etching after the described insulating barrier photoetching, expose the pixel region surface, stay between the pixel insulating barrier as divider wall;
(5) the growth electrode layer makes the height of pixel region electrode layer be higher than divider wall;
(6) silver surface is carried out CMP technology,, all pixels are separated up to exposing divider wall.
2, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: the insulating barrier in the described step (2) is the photoresist of silicon dioxide or curing.
3, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: the height of the divider wall in the described step (4) is 700 nanometers.
4, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 2, it is characterized in that: when described insulating barrier was silicon dioxide, directly deposit 700 nano silicons were divider wall.
5, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 2 is characterized in that: when described insulating barrier is photoresist, need 1 micron of gluing, solidified photoresist 700 nanometers 60 minutes down at 180 degrees centigrade.
6, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 1, it is characterized in that: the thickness of the electrode layer in the described step (5) is 800 nanometers.
7, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 6, it is characterized in that: described electrode layer is made up of 100 nanometer chromium layers and 700 nano-silver layer.
8, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 7, it is characterized in that: described 100 nanometer chromium layers adopt evaporation technology to form.
9, the preparation method of the surperficial silver electrode of a kind of silicon-based organic light-emitting micro-display device according to claim 7, it is characterized in that: described 700 nano-silver layer, be the silver layer that adopts evaporation technology to form by 100 nanometers, form with the silver layer that 600 nanometer sputtering technologies form.
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| CN101697339B (en) * | 2009-10-28 | 2012-10-31 | 上海宏力半导体制造有限公司 | Mechanism for monitoring CMP sinking degree of damascene and resistivity test method thereof |
| CN104238172A (en) * | 2014-09-10 | 2014-12-24 | 中国科学院微电子研究所 | Method for realizing high flatness on pixel surfaces |
| CN109148364A (en) * | 2018-08-29 | 2019-01-04 | 深圳华信嘉源科技有限公司 | A kind of manufacture craft of high resolution matrix screen |
| WO2019207736A1 (en) * | 2018-04-26 | 2019-10-31 | 堺ディスプレイプロダクト株式会社 | Organic el device and method for manufacturing same |
| CN110429204A (en) * | 2019-07-30 | 2019-11-08 | 昆山梦显电子科技有限公司 | Silicon substrate micro display screen and preparation method thereof |
| JP2020102456A (en) * | 2020-02-18 | 2020-07-02 | 堺ディスプレイプロダクト株式会社 | Organic EL device and manufacturing method thereof |
| CN113990995A (en) * | 2021-12-27 | 2022-01-28 | 南昌凯捷半导体科技有限公司 | Mini/micro LED with Ag reflector and manufacturing method thereof |
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- 2008-10-10 CN CNA2008102240324A patent/CN101393891A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101697339B (en) * | 2009-10-28 | 2012-10-31 | 上海宏力半导体制造有限公司 | Mechanism for monitoring CMP sinking degree of damascene and resistivity test method thereof |
| CN104238172A (en) * | 2014-09-10 | 2014-12-24 | 中国科学院微电子研究所 | Method for realizing high flatness on pixel surfaces |
| WO2019207736A1 (en) * | 2018-04-26 | 2019-10-31 | 堺ディスプレイプロダクト株式会社 | Organic el device and method for manufacturing same |
| JP6664567B1 (en) * | 2018-04-26 | 2020-03-13 | 堺ディスプレイプロダクト株式会社 | Organic EL device and manufacturing method thereof |
| US11107876B2 (en) | 2018-04-26 | 2021-08-31 | Sakai Display Products Corporation | Organic electroluminescent device and method for producing same |
| US11711955B2 (en) | 2018-04-26 | 2023-07-25 | Sakai Display Products Corporation | Organic electroluminescent device with organic flattening layer having surface Ra of 50 nm or less and method for producing same |
| CN109148364A (en) * | 2018-08-29 | 2019-01-04 | 深圳华信嘉源科技有限公司 | A kind of manufacture craft of high resolution matrix screen |
| CN110429204A (en) * | 2019-07-30 | 2019-11-08 | 昆山梦显电子科技有限公司 | Silicon substrate micro display screen and preparation method thereof |
| JP2020102456A (en) * | 2020-02-18 | 2020-07-02 | 堺ディスプレイプロダクト株式会社 | Organic EL device and manufacturing method thereof |
| JP7109492B2 (en) | 2020-02-18 | 2022-07-29 | 堺ディスプレイプロダクト株式会社 | Method for manufacturing organic EL device |
| CN113990995A (en) * | 2021-12-27 | 2022-01-28 | 南昌凯捷半导体科技有限公司 | Mini/micro LED with Ag reflector and manufacturing method thereof |
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