JP2020102456A - Organic EL device and manufacturing method thereof - Google Patents

Abstract

To provide an organic EL device and a manufacturing method thereof having a thin film encapsulation structure with relatively thin organic barrier layer with improved mass productivity and moisture resistance reliability.SOLUTION: An organic EL device 100D according to an embodiment includes a substrate 1, a drive circuit layer 2 having a plurality of TFTs formed on the substrate, an interlayer insulating layers 2Pa and 2Pb formed on the drive circuit layer, an organic EL element layer 3 formed on the interlayer insulating layer, and a thin film sealing structure 10D formed so as to cover the organic EL element layer, and the interlayer insulating layer has contact holes CH1 and CH2, and contact portions C1 and C2 connecting the drive circuit layer and the organic EL element layer are formed in the contact hole, and the surface 2Pb_Sb of the interlayer insulating layer and the surface C_Sb of the contact portion are flush with each other, and the arithmetic average roughness Ra is 50 nm or less.SELECTED DRAWING: Figure 11

Description

The present invention relates to an organic EL device (for example, an organic EL display device and an organic EL lighting device) and a manufacturing method thereof.

Organic EL (Electro Luminescence) display devices have begun to be put into practical use. One of the features of the organic EL display device is that a flexible display device can be obtained. An organic EL display device has at least one organic EL element (Organic Light Emitting Diode: OLED) for each pixel and at least one TFT (Thin Film Transistor) that controls a current supplied to each OLED. Hereinafter, the organic EL display device will be referred to as an OLED display device. An OLED display device having a switching element such as a TFT for each OLED in this way is called an active matrix OLED display device. Further, the substrate on which the TFT and the OLED are formed will be referred to as an element substrate.

The OLED (particularly the organic light emitting layer and the cathode electrode material) is easily deteriorated under the influence of moisture, and display unevenness is likely to occur. A thin film encapsulation (TFE) technique has been developed as a technique for protecting an OLED from moisture and providing a sealing structure that does not impair flexibility. The thin film encapsulation technique is intended to obtain a sufficient water vapor barrier property with a thin film by alternately stacking an inorganic barrier layer and an organic barrier layer. From the viewpoint of the moisture resistance reliability of the OLED display device, the WVTR (Water Vapor Transmission Rate) of the thin film sealing structure is typically required to be 1×10 ⁻⁴ g/m ² /day or less.

The thin film encapsulation structure used in the OLED display device currently on the market has an organic barrier layer (polymer barrier layer) having a thickness of about 5 μm to about 20 μm. The relatively thick organic barrier layer also plays a role of flattening the surface of the element substrate. However, when the organic barrier layer is thick, there is a problem that the flexibility of the OLED display device is limited.

There is also a problem that mass productivity is low. The above-mentioned relatively thick organic barrier layer is formed by using a printing technique such as an inkjet method or a micro jet method. On the other hand, the inorganic barrier layer is formed in a vacuum (for example, 1 Pa or less) atmosphere by using a thin film forming technique. The formation of the organic barrier layer using the printing technique is performed in the atmosphere or in the nitrogen atmosphere, and the formation of the inorganic barrier layer is performed in vacuum.Therefore, in the process of forming the thin film sealing structure, the element substrate is removed from the vacuum chamber. Since it will be taken in and out, mass productivity is low.

Therefore, for example, as disclosed in Patent Document 1, a film forming apparatus capable of continuously manufacturing an inorganic barrier layer and an organic barrier layer has been developed.

Further, in Patent Document 2, when the first inorganic material layer, the first resin material, and the second inorganic material layer are formed in this order from the element substrate side, the first resin material is first Disclosed is a thin film sealing structure that is unevenly distributed around the convex portion (first inorganic material layer that covers the convex portion) of the inorganic material layer. According to Patent Document 2, by unevenly distributing the first resin material around the convex portion that may not be sufficiently covered by the first inorganic material layer, invasion of water and oxygen from the portion is suppressed. In addition, the first resin material functions as a base layer of the second inorganic material layer, so that the second inorganic material layer is properly formed, and the side surface of the first inorganic material layer is provided with a desired film thickness. It becomes possible to coat appropriately. The first resin material is formed as follows. The heat-vaporized mist-like organic material is supplied onto the element substrate maintained at a temperature equal to or lower than room temperature, and the organic material is condensed on the substrate to form a droplet. The droplet-shaped organic material moves on the substrate due to a capillary phenomenon or surface tension, and is unevenly distributed at the boundary between the side surface of the convex portion of the first inorganic material layer and the substrate surface. Then, the first resin material is formed at the boundary by curing the organic material. Patent Document 3 also discloses an OLED display device having a similar thin film sealing structure. In addition, Patent Document 4 discloses a film forming apparatus used for manufacturing an OLED display device.

JP, 2013-186971, A International Publication No. 2014/196137 JP, 2016-39120, A JP, 2013-64187, A

Since the thin film sealing structure described in Patent Document 2 or 3 does not have a thick organic barrier layer, it is considered that the flexibility of the OLED display device is improved. Further, since the inorganic barrier layer and the organic barrier layer can be continuously formed, mass productivity is also improved.

However, according to the study by the present inventors, when the organic barrier layer is formed by the method described in Patent Document 2 or 3, there is a problem that sufficient moisture resistance reliability cannot be obtained.

When the organic barrier layer is formed by using a printing method such as an inkjet method, the organic barrier layer is formed only in an active region on the element substrate (also referred to as an “element forming region” or a “display region”), It can be prevented from being formed in regions other than the active region. Therefore, in the periphery (outside) of the active region, there is a region where the first inorganic material layer and the second inorganic material layer are in direct contact with each other, and the organic barrier layer includes the first inorganic material layer and the second inorganic material layer. It is completely surrounded by and is isolated from the surroundings.

On the other hand, in the method of forming the organic barrier layer described in Patent Document 2 or 3, a resin (organic material) is supplied to the entire surface of the element substrate, and the surface tension of the liquid resin is used to remove the surface of the element substrate. The resin is unevenly distributed at the boundary between the side surface of the convex portion and the substrate surface. Therefore, even in the area outside the active area (sometimes referred to as “peripheral area”), that is, in the terminal area in which a plurality of terminals are arranged and in the lead-out wiring area in which lead-out wiring from the active area to the terminal area is formed. An organic barrier layer may be formed. Specifically, for example, the resin is unevenly distributed at the boundary between the side surface of the lead wiring and the terminal and the surface of the substrate. Then, the end of the portion of the organic barrier layer formed along the lead wiring is not surrounded by the first inorganic barrier layer and the second inorganic barrier layer, but is exposed to the atmosphere (peripheral atmosphere).

Since the organic barrier layer has a lower water vapor barrier property than the inorganic barrier layer, the organic barrier layer formed along the lead wiring serves as a route for guiding the water vapor in the atmosphere into the active region.

Here, the problem of the thin film encapsulation structure suitably used for the flexible organic EL display device has been described, but the thin film encapsulation structure is not limited to the organic EL display device, and other organic EL devices such as an organic EL lighting device. Also used for.

In addition, high flatness is required for the lower electrode of the OLED and the organic layer (also referred to as an organic EL layer, including at least an organic light emitting layer). If the flatness is low, for example, the luminous efficiency of the OLED is reduced. For example, if the flatness of the lower electrode or the organic layer of the OLED is low, there is a problem that the effect cannot be sufficiently exhibited even if the microresonator structure is adopted.

The present invention has been made to solve at least one of the above problems, and an embodiment of the present invention is directed to a thin film having a relatively thin organic barrier layer with improved mass productivity and moisture resistance reliability. An object is to provide an organic EL device having a sealing structure and a method for manufacturing the same. Another embodiment of the present invention aims to provide an organic EL device capable of improving luminous efficiency and a method for manufacturing the same.

An organic EL device according to an embodiment of the present invention includes a substrate, a plurality of TFTs formed on the substrate, a plurality of gate bus lines and a plurality of source buses each connected to one of the plurality of TFTs. A drive circuit layer having a line, a plurality of terminals, and a plurality of lead wirings connecting the plurality of terminals to either the plurality of gate bus lines or the plurality of source bus lines; And an organic EL element layer having a plurality of organic EL elements formed on the interlayer insulating layer, each organic EL element being connected to one of the plurality of TFTs, and the organic EL element layer. A thin film sealing structure formed so as to cover, the interlayer insulating layer has a contact hole, and a contact portion connecting the drive circuit layer and the organic EL element layer in the contact hole. Are formed, the surface of the interlayer insulating layer and the surface of the contact portion are flush with each other, and the arithmetic average roughness Ra is 50 nm or less.

In one embodiment, each has a plurality of pixels including one of the plurality of organic EL elements, and the contact portion is formed inside each of the plurality of pixels.

In one embodiment, the plurality of organic EL elements have a lower electrode, an organic layer, and an upper electrode facing the lower electrode via the organic layer, and the contact portion is different from the lower electrode. Made of material.

In one embodiment, the interlayer insulating layer is formed on the drive circuit layer and exposes at least the plurality of terminals, and an organic planarization layer formed on the first inorganic protective layer. And the arithmetic average roughness Ra of the surface of the organic planarizing layer is 50 nm or less.

In one embodiment, the interlayer insulating layer is formed on the drive circuit layer and exposes at least the plurality of terminals, and an organic planarization layer formed on the first inorganic protective layer. And a second inorganic protective layer formed on the organic planarizing layer, and the arithmetic mean roughness Ra of the surface of the second inorganic protective layer is 50 nm or less.

In one embodiment, the thin film encapsulation structure has a first inorganic barrier layer, an organic barrier layer in contact with an upper surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with an upper surface of the organic barrier layer. However, the organic barrier layer is formed in a region surrounded by an inorganic barrier layer bonding portion in which the first inorganic barrier layer and the second inorganic barrier layer are in direct contact with each other. When viewed from the line direction, the organic planarization layer is formed in the region in which the first inorganic protective layer is formed, and the plurality of organic EL layers are formed in the region in which the organic planarization layer is formed. An element is arranged, an outer edge of the thin film sealing structure intersects with the plurality of lead wirings, and exists between an outer edge of the organic planarizing layer and an outer edge of the first inorganic protective layer, A cross section of the first inorganic barrier layer parallel to the line width direction of the plurality of lead wirings in a portion where the first inorganic protective layer and the first inorganic barrier layer directly contact each other on the plurality of lead wirings. The taper angle of the side surface of the shape is less than 90°.

In one embodiment, the taper angle of the side surface of the first inorganic barrier layer is less than 70°.

In one embodiment, the organic planarization layer is made of polyimide.

An organic EL device manufacturing method according to an embodiment of the present invention is the method for manufacturing the organic EL device according to any one of the above, comprising the step A of forming the drive circuit layer on the substrate, Step B of forming an interlayer insulating film having a contact hole on the drive circuit layer, Step C of forming a conductive contact film covering the interlayer insulating film, and the surface of the contact film and the interlayer insulating film. And a step D of obtaining the interlayer insulating layer and the contact portion by performing chemical mechanical polishing on the surface of.

In one embodiment, the step C includes a step of forming a titanium film by a sputtering method and a step of forming a copper film on the titanium film by a plating method.

In one embodiment, the step B includes a step of forming a first inorganic protective film on the drive circuit layer and a step of forming an organic planarizing film on the first inorganic protective film, and the step of A step E of heating the interlayer insulating layer to a temperature of 100° C. or higher after D, and a step F of forming an organic layer included in the organic EL element on the interlayer insulating layer after the step E. Include.

In one embodiment, the step D includes a step of subjecting the surface of the organic planarizing film to chemical mechanical polishing.

In one embodiment, the step B includes a step of forming a first inorganic protective film on the drive circuit layer, a step of forming an organic planarizing film on the first inorganic protective film, and the organic planarizing film. Including a step of forming a second inorganic protective film thereon, and a step of collectively forming a contact hole penetrating the first inorganic protective film, the organic planarizing film and the second inorganic protective film, Step D includes a step of subjecting the surface of the second inorganic protective film to chemical mechanical polishing.

According to an embodiment of the present invention, there is provided an organic EL display device including a thin film encapsulation structure having a relatively thin organic barrier layer, which has improved mass productivity and moisture resistance reliability, and a method for manufacturing the same. According to another embodiment of the present invention, there is provided an organic EL device capable of improving luminous efficiency and a method for manufacturing the same.

(A) is a schematic partial cross-sectional view of an active region of an OLED display device 100 according to an embodiment of the present invention, and (b) is a partial cross-sectional view of a TFE structure 10 formed on an OLED 3. FIG. 3 is a schematic plan view of an OLED display device 100A according to an embodiment of the present invention. 2A and 2B are schematic cross-sectional views of the OLED display device 100A, FIG. 3A is a cross-sectional view taken along the line 3A-3A′ in FIG. 2, and FIG. FIG. 3B is a cross-sectional view taken along the line 3B-3B′, and (c) is a cross-sectional view showing the taper angle θ of the side surface of each layer. (A)-(d) is a schematic sectional drawing of OLED display device 100A, (a) is sectional drawing which followed the 4A-4A' line in FIG. 2, (b) is a sectional view. 4C is a sectional view taken along the line 4B-4B′, FIG. 4C is a sectional view taken along the line 4C-4C′ in FIG. 2, and FIG. 4D is a sectional view taken along the line 4D-4D′ in FIG. FIG. 4A and 4B are schematic cross-sectional views corresponding to FIG. 4B in OLED display devices 100B1 and 100B2 of a comparative example. It is a typical top view of OLED display device 100C of a comparative example. 6A and 6B are schematic cross-sectional views of the OLED display device 100C, FIG. 6A is a cross-sectional view taken along line 7A-7A′ in FIG. 6, and FIG. FIG. 7B is a sectional view taken along the line 7B-7B′. (A)-(c) is a typical sectional view of OLED display device 100C, (a) is a sectional view which follows the 8A-8A' line in FIG. 6, (b) is a sectional view. FIG. 8C is a sectional view taken along line 8B-8B′, and FIG. 7C is a sectional view taken along line 8C-8C′ in FIG. 6. (A) And (b) is a typical sectional view showing an example of TFT which an OLED display by an embodiment may have, respectively. 4A to 4C are schematic cross-sectional views of other OLED display devices according to the embodiment, and correspond to FIGS. 4B to 4D, respectively. (A) And (b) is a typical sectional view of further another OLED display 100D by an embodiment. (A)-(c) is a typical sectional view for explaining the manufacturing method of OLED display 100D. (A) And (b) is a typical sectional view of further another OLED display 100E by an embodiment. (A)-(c) is a typical sectional view for explaining a manufacturing method of OLED display 100E. (A) And (b) is a figure which shows the structure of the film-forming apparatus 200 typically, (a) of the film-forming apparatus 200 in the process of condensing a photocurable resin on a 1st inorganic barrier layer. The state is shown, and (b) shows the state of the film forming apparatus 200 in the step of curing the photocurable resin.

Hereinafter, an OLED display device and a method of manufacturing the same according to embodiments of the present invention will be described with reference to the drawings. Hereinafter, an OLED display device having a flexible substrate will be exemplified, but the embodiment of the present invention is not limited to the organic EL display device, and may be another organic EL device such as an organic EL lighting device. It is not limited to the embodiment.

First, the basic configuration of an OLED display device 100 according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1A is a schematic partial cross-sectional view of an active region of an OLED display device 100 according to an embodiment of the present invention, and FIG. 1B is a partial cross-sectional view of a TFE structure 10 formed on an OLED 3. Is.

The OLED display device 100 has a plurality of pixels, and each pixel has at least one organic EL element (OLED). Here, for simplicity, a structure corresponding to one OLED will be described.

As shown in FIG. 1A, an OLED display device 100 includes a circuit (“driving circuit”) including a flexible substrate (hereinafter, simply referred to as “substrate”) 1 and TFTs formed on the substrate 1. Or "backplane circuit") 2, an inorganic protective layer (first inorganic protective layer) 2Pa formed on the circuit 2, and an organic planarizing layer 2Pb formed on the inorganic protective layer 2Pa. , The OLED 3 formed on the organic planarizing layer 2Pb, and the TFE structure 10 formed on the OLED 3. Hereinafter, the substrate 1, the circuit 2, the inorganic protective layer 2Pa, the organic planarizing layer 2Pb, and the OLED 3 formed on the substrate 1 may be referred to as an element substrate 20. That is, the substrate 1 and the constituent elements arranged on the side closer to the substrate 1 than the TFE structure 10 on the substrate 1 are collectively referred to as an element substrate.

The OLED 3 is, for example, a top emission type. The uppermost part of the OLED 3 is, for example, an upper electrode or a cap layer (refractive index adjusting layer). A layer in which a plurality of OLEDs 3 are arranged may be referred to as an OLED layer 3. An optional polarizing plate 4 is arranged on the TFE structure 10. Note that the circuit 2 and the OLED layer 3 may share some components. Further, for example, a layer having a touch panel function may be arranged between the TFE structure 10 and the polarizing plate 4. That is, the OLED display device 100 can be modified into an on-cell type display device with a touch panel.

The substrate 1 is, for example, a polyimide film having a thickness of 15 μm. The thickness of the circuit 2 including the TFT is 4 μm, for example. The inorganic protective layer 2Pa is, for example, a SiN _x layer (500 nm)/SiO ₂ layer (100 nm) (upper layer/lower layer). In addition to this, the inorganic protective layer 2Pa may have, for example, a three-layer structure of SiO ₂ layer/SiN _x layer/SiO ₂ layer, and the thickness of each layer is, for example, 200 nm/300 nm/100 nm. Further, the inorganic protective layer 2Pa may be a single layer of SiN _x layer (200 nm). The organic flattening layer 2Pb is, for example, an acrylic resin layer, an epoxy resin layer, or a polyimide layer having a thickness of 4 μm. The organic planarization layer 2Pb may be formed using a photosensitive resin or a resin having no photosensitivity. The thickness of the OLED 3 is, for example, 1 μm. The thickness of the TFE structure 10 is, for example, 2.5 μm or less.

FIG. 1B is a partial cross-sectional view of the TFE structure 10 formed on the OLED 3. A first inorganic barrier layer (eg, SiN _x layer) 12 is formed directly on the OLED 3, and an organic barrier layer (eg, acrylic resin layer) 14 is formed on the first inorganic barrier layer 12, and the organic barrier layer is formed. A second inorganic barrier layer (eg, SiN _x layer) 16 is formed on the layer 14.

For example, the first inorganic barrier layer 12 is a SiN _x layer having a thickness of 1.5 μm, the second inorganic barrier layer 16 is a SiN _x layer having a thickness of 800 nm, and the organic barrier layer 14 has a thickness of, for example. Is an acrylic resin layer having a thickness of less than 100 nm. The first inorganic barrier layer 12 and the second inorganic barrier layer 16 each independently have a thickness of 200 nm to 1500 nm, and the organic barrier layer 14 has a thickness of 50 nm to less than 200 nm. The thickness of the TFE structure 10 is preferably 400 nm or more and less than 3 μm, and more preferably 400 nm or more and 2.5 μm or less.

The TFE structure 10 is formed so as to protect the active region (see the active region R1 in FIG. 2) of the OLED display device 100, and at least in the active region R1, as described above, in order from the side closer to the OLED 3. , The first inorganic barrier layer 12, the organic barrier layer 14, and the second inorganic barrier layer 16. The organic barrier layer 14 does not exist as a film that covers the entire surface of the active region R1 but has an opening. The portion of the organic barrier layer 14 where the organic film actually exists, excluding the opening, is referred to as a “solid portion”. The organic barrier layer 14 can be formed using, for example, the method described in Patent Document 1 or 2, or the film forming apparatus 200 described later.

Further, the “opening” (also referred to as “non-solid part”) does not need to be surrounded by the solid part and includes notches and the like, and in the opening, the first inorganic barrier layer 12 is formed. And the second inorganic barrier layer 16 are in direct contact with each other. Below, the portion where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact is referred to as the “inorganic barrier layer joint portion”.

Next, a structure and a manufacturing method of the OLED display device 100A according to the embodiment of the present invention will be described with reference to FIGS.

FIG. 2 shows a schematic plan view of the OLED display device 100A according to the embodiment of the present invention. Further, the cross-sectional structure of the OLED display device 100A will be described with reference to FIGS. 3(a) to 3(c) and FIGS. 4(a) to 4(d). 3A and 3B are schematic cross-sectional views of the OLED display device 100A, FIG. 3A is a cross-sectional view taken along the line 3A-3A′ in FIG. 2, and FIG. 3) is a sectional view taken along the line 3B-3B′ in FIG. FIG. 3C is a sectional view showing the taper angle θ of the side surface of each layer. 4A to 4D are schematic cross-sectional views of the OLED display device 100A, FIG. 4A is a cross-sectional view taken along the line 4A-4A′ in FIG. 2, and FIG. ) Is a cross-sectional view taken along line 4B-4B' in FIG. 2, FIG. 4C is a cross-sectional view taken along line 4C-4C' in FIG. 2, and FIG. FIG. 4D is a cross-sectional view taken along the line 4D-4D′.

First, refer to FIG. The circuit 2 formed on the substrate 1 includes a plurality of TFTs (not shown), a plurality of gate bus lines (not shown) connected to one of the plurality of TFTs (not shown), and a plurality of sources. It has a bus line (not shown). The circuit 2 may be a known circuit for driving a plurality of OLEDs 3. The plurality of OLEDs 3 are connected to any of the plurality of TFTs included in the circuit 2. The OLED 3 may also be a known OLED.

The circuit 2 further includes a plurality of terminals 34 arranged in a peripheral region R2 outside the active region (region surrounded by broken lines in FIG. 2) R1 in which the plurality of OLEDs 3 are arranged, and a plurality of terminals 34. It has a plurality of lead-out wirings 32 for connecting either a plurality of gate bus lines or a plurality of source bus lines. The entire circuit 2 including the plurality of TFTs, the plurality of gate bus lines, the plurality of source bus lines, the plurality of lead wires 32, and the plurality of terminals 34 may be referred to as a drive circuit layer 2. In addition, a portion of the drive circuit layer 2 formed in the active region R1 is referred to as a drive circuit layer 2A.

Note that, in FIG. 2 and the like, only the lead wiring 32 and/or the terminal 34 may be illustrated as the constituent elements of the drive circuit layer 2, but the drive circuit layer 2 includes only the conductive layer including the lead wiring 32 and the terminal 34. Instead, it has one or more further conductive layers, one or more insulating layers and one or more semiconductor layers. The configurations of the conductive layer, the insulating layer, and the semiconductor layer included in the drive circuit layer 2 can be changed depending on, for example, the configuration of the TFT illustrated in FIGS. 9A and 9B later. Further, an insulating film (base coat) may be formed on the substrate 1 as a base film of the drive circuit layer 2.

When viewed from the normal direction of the substrate 1, the organic planarizing layer 2Pb is formed in the region where the inorganic protective layer 2Pa is formed, and the active region R1 is formed in the region where the organic planarizing layer 2Pb is formed. (2A, 3) are arranged. The outer edge of the TFE structure 10 intersects with the plurality of lead wirings 32 and exists between the outer edge of the organic planarizing layer 2Pb and the outer edge of the inorganic protective layer 2Pa. Therefore, the organic planarization layer 2Pb is surrounded by the joint portion where the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact with each other, together with the OLED layer 3 (see FIGS. 3B and 4B). ). The inorganic protective layer 2Pa is formed by, for example, a plasma CVD method using a mask (for example, a metal mask) so as to expose at least a plurality of terminals 34. Alternatively, an inorganic protective film is once formed by plasma CVD so as to cover the terminal 34, and then patterned by a photolithography process (including a dry etching step) to form an opening for exposing the terminal 34. The protective layer 2Pa may be obtained. As will be described later, when the second inorganic protective layer 2Pa2 is formed on the organic planarizing layer 2Pb (see FIG. 13A), the patterning including the formation of the contact hole is performed using the inorganic protective film 2Pa (first inorganic protective layer 2Pa). It is preferable that the protective film 2Pa1), the organic planarizing film 2Pb, and the second inorganic protective layer 2Pa2 are collectively processed (see FIG. 14B).

The inorganic protective layer 2Pa protects the drive circuit layer 2. The organic planarization layer 2Pb planarizes the surface of the base on which the OLED layer 3 is formed. Like the organic barrier layer 14, the organic planarizing layer 2Pb has a lower water vapor barrier property than the inorganic protective layer 2Pa and the inorganic barrier layers 12 and 16. Therefore, like the organic flattening layer 2Pbc of the OLED display device 100C of the comparative example shown in FIGS. 6 to 8, when part of the organic flattening layer 2Pbc is exposed to the atmosphere (ambient atmosphere), it absorbs moisture. As a result, the organic planarizing layer 2Pbc becomes a path for guiding the water vapor in the atmosphere into the active region R1. As described above, in the OLED display device 100 according to the embodiment, the organic flattening layer 2Pb is surrounded by the joint portion where the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact with each other, and thus the organic flattening layer is formed. Water is prevented from being guided from the layer 2Pb into the active region R1.

The organic flattening layer 2Pb is formed of, for example, a photosensitive resin. The organic flattening layer 2Pb is formed by using various coating methods and printing methods. In addition, if it has photosensitivity, the organic planarizing layer 2Pb can be easily formed only in a predetermined region by a photolithography process. For example, a photosensitive resin is applied to almost the entire surface of the element substrate, and then the photosensitive resin is exposed and developed, so that a predetermined area (see, for example, FIG. 11B) except the peripheral portion of the element substrate is exposed to the organic light. A resin film can be formed. When the photosensitive resin is used, the contact hole can be formed by a photolithography process. The photosensitive resin may be a positive type or a negative type. Acrylic resin, epoxy resin or polyimide resin having photosensitivity can be preferably used. Of course, if a separate photoresist is used, the organic planarization layer 2Pb can be formed using a resin having no photosensitivity.

The organic resin easily contains water. On the other hand, as described above, the OLED (particularly the organic light emitting layer and the cathode electrode material) is easily deteriorated by the influence of moisture. Therefore, before forming the OLED layer 3 on the organic planarization layer 2Pb, it is preferable to heat (bak) to remove the water contained in the organic planarization layer 2Pb. The heating temperature is preferably 100° C. or higher (eg, 1 hour or longer), and more preferably 250° C. or higher (eg, 15 minutes or longer). The atmosphere may be atmospheric pressure. Heating in a reduced pressure atmosphere can shorten the heating time. A resin material having high heat resistance is preferable so that thermal deterioration does not occur in this heating (baking) step, and for example, polyimide is preferable.

The element substrate may be stored or transported after the organic planarization layer 2Pb is formed and before the OLED layer 3 is formed. That is, after the element substrate on which the drive circuit layer 2, the inorganic protective layer 2Pa, and the organic planarizing layer 2Pb are formed is manufactured, there is no time until the OLED layer 3 is formed (for example, stored for one day or more for several days). ), or move to another factory. As a method for preventing the surface of the organic planarizing layer 2Pb from being contaminated or dust being attached during the movement, for example, a positive photoresist film that covers the organic planarizing layer 2Pb is formed. do it. This photoresist film is formed by applying a photoresist solution and then pre-baking (volatilization removal of the solvent: for example, heating in a temperature range of about 90° C. to about 110° C. for about 5 minutes to about 30 minutes). Preferably. By removing the photoresist film immediately after forming the OLED layer 3 after storage or moving, a clean surface of the organic planarizing layer 2Pb can be obtained. For removal of the photoresist film, it is preferable to expose the entire surface of the photoresist film, develop it without performing ordinary post-baking, or perform pre-baking, and then peel with a peeling solution without exposing the entire surface. .. As a material for forming the positive type photoresist film, for example, a positive type photoresist, product name OFPR-800 manufactured by Tokyo Ohka Co., Ltd., can be preferably used.

As will be described later with reference to FIG. 11A, a bank layer may be formed in the process of forming the OLED layer 3. The bank layer is formed after forming the lower electrode and before forming the organic layer (organic EL layer). Since the bank layer is formed of an organic resin (for example, polyimide), it easily contains water and contacts the organic layer. Therefore, it is preferable to heat the bank layer to remove water. Therefore, after forming the organic planarizing layer 2Pb, forming the lower electrode and the bank layer, and then forming the positive photoresist film for protecting the surface of the element substrate as described above. Good. After the necessary storage and/or transportation, the photoresist film is removed as described above, and immediately before the formation of the organic layer, heating is performed to remove the water contained in the organic planarizing layer 2Pb and the bank layer. In this way, the heating step for removing the water contained in the organic planarizing layer 2Pb and the heating step for removing the water contained in the bank layer may be combined. Of course, as described above, the heating step for protecting the organic planarizing layer 2Pb with the positive type photoresist film, removing the positive type photoresist film, and then removing the moisture contained in the organic planarizing layer 2Pb. After that, a heating step for removing water contained in the bank layer may be performed after forming the lower electrode and the bank layer and before forming the organic layer.

Next, referring to FIGS. 3A to 3C and FIGS. 4A to 4D, the cross-sectional structure of the OLED display device 100A will be described in more detail.

As shown in FIGS. 3A and 3B and FIGS. 4A and 4B, the TFE structure 10A includes a first inorganic barrier layer 12 formed on the OLED 3 and a first inorganic barrier layer 12. It has an organic barrier layer 14 in contact with it and a second inorganic barrier layer 16 in contact with the organic barrier layer 14. The first inorganic barrier layer 12 and the second inorganic barrier layer 16 are, for example, SiN _x layers, and are selectively formed in a predetermined region so as to cover the active region R1 by a plasma CVD method using a mask. ..

The organic barrier layer 14 can be formed by, for example, the method described in Patent Document 2 or 3 above. For example, in a chamber, an organic material (eg, acrylic monomer) vapor or mist-like organic material is supplied onto an element substrate maintained at a temperature of room temperature or lower, and condensed on the element substrate to become a liquid organic material. Due to the capillary phenomenon or surface tension of the material, the first inorganic barrier layer 12 is unevenly distributed at the boundary between the side surface of the convex portion and the flat portion. After that, by irradiating the organic material with, for example, ultraviolet rays, a solid portion of the organic barrier layer (for example, an acrylic resin layer) 14 is formed at the boundary portion around the convex portion. The organic barrier layer 14 formed by this method has substantially no solid portion in the flat portion. Regarding the method for forming the organic barrier layer, the disclosures of Patent Documents 2 and 3 are incorporated herein by reference.

The organic barrier layer 14 is also adjusted by adjusting the initial thickness of the resin layer formed using the film forming apparatus 200 (for example, less than 100 nm) and/or by ashing the resin layer once formed. Can also be formed. The ashing treatment can be performed by plasma ashing using at least one gas selected from N ₂ O, O ₂ and O ₃ , as described in detail later.

FIG. 3A is a cross-sectional view taken along the line 3A-3A′ in FIG. 2, showing a portion including particles P. The particles P are fine dust generated during the manufacturing process of the OLED display device, and are, for example, fine glass fragments, metal particles, or organic particles. When the mask vapor deposition method is used, particles are particularly likely to be generated.

As shown in FIG. 3A, the organic barrier layer (solid portion) 14 can be formed only around the particles P. This is because the acrylic monomer applied after forming the first inorganic barrier layer 12 is condensed and unevenly distributed around the surface of the first inorganic barrier layer 12a (taper angle θ is 90° or more) on the particles P. Is. The flat portion of the first inorganic barrier layer 12 is an opening (non-solid portion) of the organic barrier layer 14.

The presence of particles (for example, having a diameter of about 1 μm or more) P may cause cracks (defects) 12c to be formed in the first inorganic barrier layer 12. It is considered that this is because the SiN _x layer 12a growing from the surface of the particle P and the SiN _x layer 12b growing from the flat portion of the surface of the OLED 3 collide (impinge). The presence of such cracks 12c deteriorates the barrier properties of the TFE structure 10A.

In the TFE structure 10A of the OLED display device 100A, as shown in FIG. 3A, the organic barrier layer 14 is formed so as to fill the cracks 12c of the first inorganic barrier layer 12, and the organic barrier layer 14 is formed. The surface continuously and smoothly connects the surface of the first inorganic barrier layer 12a on the particle P and the surface of the first inorganic barrier layer 12b on the flat part of the OLED 3. Therefore, a dense film is formed without forming defects in the second inorganic barrier layer 16 formed on the first inorganic barrier layer 12 and the organic barrier layer 14 on the particles P. Thus, the organic barrier layer 14 can maintain the barrier property of the TFE structure 10A even if the particles P are present.

Next, with reference to FIG. 3B and FIGS. 4A to 4D, a sectional structure on the lead wiring 32 and the terminal 34 will be described.

As shown in FIG. 3B, the lead wiring 32 and the terminal 34 are integrally formed on the substrate 1, and the inorganic protective layer 2Pa is formed on the lead wiring 32 so as to expose the terminal 34. ing. An organic planarizing layer 2Pb is formed on the inorganic protective layer 2Pa, and an OLED layer 3 is formed on the organic planarizing layer 2Pb. The TFE structure 10A is formed so as to cover the OLED layer 3 and the organic planarizing layer 2Pb, and the OLED layer 3 and the organic planarizing layer 2Pb are in direct contact with the inorganic protective layer 2Pa and the first inorganic barrier layer 12. It is surrounded by joints. Since the organic barrier layer (solid portion) 14 between the first inorganic barrier layer 12 and the second inorganic barrier layer 16 of the TFE structure 10A is formed only around the convex portion such as particles, here. Not shown. The organic barrier layer (solid portion) 14 is surrounded by the inorganic barrier layer bonding portion in which the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact with each other.

As shown in FIG. 4A, in a region close to the active region R1 (cross section taken along the line 4A-4A′ in FIG. 2), the inorganic protective layer 2Pa and the organic planarizing layer are formed on the lead wiring 32. 2Pb and TFE structure 10A is formed.

As shown in FIG. 4B, in the cross section taken along the line 4B-4B′ in FIG. 2, the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact with each other, and the organic planarizing layer 2Pb Is surrounded by a joint portion where the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact with each other (see FIGS. 2 and 3B).

As shown in FIG. 4C, in the region near the terminal 34, only the inorganic protective layer 2Pa is formed on the lead wiring 32.

As shown in FIG. 4D, the terminal 34 is also exposed from the inorganic protective layer 2Pa and is used for electrical connection with an external circuit (for example, FPC (Flexible Printed Circuits)).

Since the region including the portions shown in FIGS. 4B to 4D is not covered with the organic planarizing layer 2Pb, in the process of forming the organic barrier layer 14 of the TFE structure 10A, the organic barrier layer (solid Parts) can be formed. For example, when the side surface in the cross-sectional shape parallel to the line width direction of the extraction wiring 32 has a taper angle θ of 90° or more, the organic barrier layer can be formed along the side surface of the extraction wiring 32. However, as shown in FIGS. 4B to 4D, in the OLED display device 100A according to the embodiment, at least in these regions, the taper angle θ of the side surface in the cross-sectional shape of the lead wire 32 and the terminal 34 is 90°. It is defined as less than, and the photocurable resin is not unevenly distributed. Therefore, the organic barrier layer (solid portion) is not formed along the side surfaces of the lead wiring 32 and the terminal 34.

Here, the taper angle θ of the side surface of each layer will be described with reference to FIG. FIG. 3C is a cross-sectional view showing the taper angle θ of the side surface of each layer, and corresponds to, for example, the cross-sectional view shown in FIG. 4B. As shown in FIG. 3C, the taper angle θ of the side surface in the cross-sectional shape parallel to the width direction of the extraction wiring 32 is represented by θ(32), and the taper angle θ of the side surface of the other layer is also θ(32). The reference numerals of the constituent elements).

Then, each taper of the inorganic protective layer 2Pa formed on the lead wiring 32, the side surface of the first inorganic barrier layer 12 and the side surface of the second inorganic barrier layer 16 of the TFE structure 10A formed on the inorganic protective layer 2Pa. The angle θ satisfies the relationship of θ(32)≧θ(2Pa)≧θ(12)≧θ(16). Therefore, if the taper angle θ(32) of the side surface of the lead wiring 32 is less than 90°, the taper angle θ(2Pa) of the side surface of the inorganic protective layer 2Pa and the taper angle θ(12 of the side surface of the first inorganic barrier layer 12 are used. ) Is also less than 90°.

If the taper angle θ of the side surface is 90° or more, in the method of forming the organic barrier layer described in Patent Document 2 or 3, along the boundary between the side surface and the flat surface (forming an angle of 90° or less), The vapor of the organic material (for example, acrylic monomer) or the mist-like organic material is condensed to form the organic barrier layer (solid portion). Then, for example, the organic barrier layer (solid portion) formed along the lead wiring becomes a path for guiding the water vapor in the atmosphere into the active region.

For example, as shown in the schematic cross-sectional view corresponding to FIG. 4B in the OLED display device 100B1 of the comparative example of FIG. 5A, the taper angle θ (32B1) of the side surface of the lead wiring 32B1 and the first inorganic material are shown. When the taper angle θ (12B1) of the side surface of the barrier layer 12B1 is 90° or more, the first inorganic barrier layer 12B1 and the second inorganic barrier layer 16B1 are formed along the side surface of the first inorganic barrier layer 12B1 of the TFE structure 10B1. The organic barrier layer (solid portion) 14B1 is formed between the two. In the OLED display device 100B1, for example, the inorganic protective layer 2Pa in the OLED display device 100 according to the embodiment is omitted, and the taper angle θ(32) of the side surface of the lead wiring 32 and the side surface of the first inorganic barrier layer 12 are omitted. The taper angle θ(12) may be modified to 90° or more.

Further, as shown in the schematic cross-sectional view corresponding to FIG. 4B in the OLED display device 100B2 of the comparative example of FIG. 5B, the lead wiring 32B2, the inorganic protective layer 2PaB2, and the first inorganic barrier layer 12B2 are formed. When the taper angles θ(32B2), θ(2PaB2), and θ(12B2) of the side surfaces are 90° or more, the first inorganic barrier layer 12B2 and the first inorganic barrier layer 12B2 are formed along the side surfaces of the first inorganic barrier layer 12B2 of the TFE structure 10B2. An organic barrier layer (solid portion) 14B2 is formed between the two inorganic barrier layers 16B2. In the OLED display device 100B2, for example, the side surface taper angle θ(32) of the lead wiring 32 and the side surface taper angle θ(12) of the first inorganic barrier layer 12 in the OLED display device 100A according to the embodiment are changed to 90° or more. It can be

Unlike the OLED display device 100B1, the OLED display device 100B2 has the inorganic protective layer 2PaB2. Therefore, the side surface taper angle θ (12B2) of the first inorganic barrier layer 12B2 is equal to the first inorganic barrier layer of the OLED display device 100B1. It tends to be smaller than the side surface taper angle θ (12B1) of 12B1.

In the OLED display device 100A according to the embodiment of the present invention shown in FIGS. 4B to 4D, the taper angles θ(32) and θ( of the side surfaces of the lead wiring 32, the inorganic protective layer 2Pa, and the first inorganic barrier layer 12 are formed. 2 Pa) and θ(12) are both less than 90°, and the organic barrier layer 14 is not formed along these side surfaces. Therefore, moisture in the atmosphere does not reach the active region R1 through the organic barrier layer (solid portion) 14, and excellent moisture resistance reliability can be obtained. Here, an example is shown in which the taper angles θ(32), θ(2Pa) and θ(12) are all less than 90°, but the present invention is not limited to this, and at least the surface immediately below the organic barrier layer 14 is formed. If the taper angle θ(12) of the side surface of the first inorganic barrier layer 12 is less than 90°, the laminated structure shown in FIG. 4B (the inorganic protective layer 2Pa and the first inorganic barrier layer 12 are in direct contact with each other). A portion where the organic planarizing layer 2Pb does not exist, and a portion where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are in direct contact (the organic barrier layer 14 does not exist) are formed. Therefore, it is possible to suppress/prevent the intrusion of water in the atmosphere into the active region R1 through the organic planarizing layer 2Pb or the organic barrier layer 14. Further, by having the inorganic protective layer 2Pa, Since the taper angle θ(12) of the first inorganic barrier layer 12 can be reduced, even if the taper angle θ(32) of the lead wiring 32 is made relatively large (for example, 90°), the first inorganic barrier layer 12 has a The taper angle θ(12) can be less than 90°, that is, the taper angle θ(32) of the lead wire 32 can be brought to 90° or close to 90°, so that the L/S of the lead wire 32 can be reduced. The advantage is that it can be done.

In the range where the taper angle θ of the side surface is 70° or more and less than 90°, the organic barrier layer (solid part) 14 may be formed along the side surface. Of course, if the ashing process is performed, the resin unevenly distributed along the inclined side surface can be removed, but the time required for the ashing process becomes long. For example, ashing for a long time is required even after removing the resin formed on the flat surface. Alternatively, as a result of excessive ashing (removal) of the organic barrier layer (solid portion) formed around the particles P, there may occur a problem that the effect of forming the organic barrier layer is not sufficiently exerted. In order to suppress/prevent this, the taper angle θ(12) of the first inorganic barrier layer 12 is preferably less than 70°, more preferably less than 60°.

Next, the structure of the OLED display device 100C of the comparative example will be described with reference to FIGS. FIG. 6 shows a schematic plan view of the OLED display device 100C. 7A and 7B are schematic cross-sectional views of the OLED display device 100C, FIG. 7A is a cross-sectional view taken along line 7A-7A′ in FIG. 6, and FIG. 7) is a sectional view taken along line 7B-7B′ in FIG. 6. 8A to 8C are schematic cross-sectional views of the OLED display device 100C, FIG. 8A is a cross-sectional view taken along line 8A-8A′ in FIG. 6, and FIG. 8) is a sectional view taken along line 8B-8B' in FIG. 6, and FIG. 8C is a sectional view taken along line 8C-8C' in FIG.

The OLED display device 100C is different from the OLED display device 100 according to the embodiment in that it does not have the inorganic protective layer 2Pa and that the organic planarization layer 2Pbc extends to a region not covered by the TFE structure 10C. .. It should be noted that constituent elements that are substantially the same as the constituent elements of the OLED display device 100A are denoted by the same reference numerals, and description thereof may be omitted.

For example, as is clear from FIGS. 6, 7B, and 8B, a part of the organic planarizing layer 2Pbc is exposed to the atmosphere (peripheral atmosphere). Then, the organic planarization layer 2Pbc becomes a path that absorbs moisture from the portion exposed to the atmosphere and guides water vapor in the atmosphere into the active region R1. On the other hand, in the OLED display device 100A according to the embodiment, as shown in FIG. 3B and FIG. It is surrounded by a joint in direct contact with the barrier layer 12. Therefore, the above problem of the OLED display device 100C of the comparative example can be solved.

Next, with reference to FIG. 9 and FIG. 10, an example of a TFT used in the OLED display device 100A, and an example of a lead wiring and a terminal formed by using a gate metal layer and a source metal layer when manufacturing the TFT. explain. The structure of the TFT, the lead wiring, and the terminal described below can be used in the OLED display device 100A of the above-described embodiment.

High-definition small and medium-sized OLED display devices include low-mobility polysilicon (abbreviated as “LTPS”) TFTs or oxide TFTs (for example, In (indium), Ga (gallium), Zn (zinc), which have high mobility. ), and a quaternary (In-Ga-Zn-O-based) oxide TFT containing O (oxygen) is preferably used. Since the structures and manufacturing methods of LTPS-TFTs and In-Ga-Zn-O-based TFTs are well known, only a brief description will be given below.

9 (a) is a schematic sectional view of the _{LTPS-TFT2 P T, TFT2 P} T may be included in the circuit 2 of the OLED display device 100A. LTPS-TFT2 _P T is a top-gate type TFT.

The TFT 2 _P T is formed on the base coat 2 _P p on the substrate (for example, a polyimide film) 1. Although omitted in the above description, it is preferable to form a base coat made of an inorganic insulator on the substrate 1.

The TFT 2 _P T is formed on the polysilicon layer 2 _P se formed on the base coat 2 _P p, the gate insulating layer 2 _P gi formed on the polysilicon layer 2 _P se, and the gate insulating layer 2 _P gi. The gate electrode 2 _P g, the interlayer insulating layer 2 _P i formed on the gate electrode 2 _P g, the source electrode 2 _P ss and the drain electrode 2 _P sd formed on the interlayer insulating layer 2 _P i. have. The source electrode 2 _P ss and the drain electrode 2 _P sd are connected to the source region and the drain region of the polysilicon layer 2 _P se in the contact holes formed in the interlayer insulating layer 2 _P i and the gate insulating layer 2 _P gi, respectively. Has been done.

The gate electrode 2 _P g is included in the same gate metal layer as the gate bus line, and the source electrode 2 _P ss and the drain electrode 2 _P sd are included in the same source metal layer as the source bus line. Lead wires and terminals are formed using the gate metal layer and the source metal layer (described later with reference to FIG. 10 ).

TFT 2 _P T, for example, be fabricated in the following manner.

As the substrate 1, for example, a polyimide film having a thickness of 15 μm is prepared.

A base coat 2 _P p (SiO ₂ film: 250 nm/SiN _x film: 50 nm/SiO ₂ film: 500 nm (upper layer/intermediate layer/lower layer)) and an a-Si film (40 nm) are formed by a plasma CVD method.

Dehydrogenation processing (for example, annealing at 450° C. for 180 minutes) is performed on the a-Si film.

The a-Si film is converted into polysilicon by the excimer laser annealing (ELA) method.

An active layer (semiconductor island) is formed by patterning the a-Si film in a photolithography process.

A gate insulating film (SiO ₂ film: 50 nm) is formed by the plasma CVD method.

Doping (B ⁺ ) is performed on the channel region of the active layer.

Gate metal: a (Mo 250 nm) was deposited by sputtering, (to form the gate electrode 2 _P g and the gate bus lines, etc.) that a photolithography process for patterning (including a dry etching process).

Doping (P ⁺ ) is performed on the source region and the drain region of the active layer.

Activation annealing (for example, annealing at 450° C. for 45 minutes) is performed. In this way, the polysilicon layer 2 _P se is obtained.

An interlayer insulating film (for example, SiO ₂ film: 300 nm/SiN _x film: 300 nm (upper layer/lower layer)) is formed by a plasma CVD method.

Contact holes are formed in the gate insulating film and the interlayer insulating film by dry etching. Thus, the interlayer insulating layer 2 _P i and the gate insulating layer 2 _P gi are obtained.

A source metal (Ti film: 100 nm/Al film: 300 nm/Ti film: 30 nm) is formed by a sputtering method and patterned by a photolithography process (including a dry etching process) (source electrode 2 _P ss, drain electrode 2 _P). sd and source bus lines etc.).

After that, the above-mentioned inorganic protective layer 2Pa (see FIGS. 2 and 3) is formed by, for example, the plasma CVD method.

9 (b) is a schematic cross-sectional view of the In-Ga-Zn-O-based TFT2 _O T, TFT2 _O T may be included in the circuit 2 of the OLED display device 100A. TFT2 _O T is a bottom-gate type TFT.

The TFT 2 _O T is formed on the base coat 2 _O p on the substrate (eg, polyimide film) 1. The TFT 2 _O T is formed on the gate electrode 2 _O g formed on the base coat 2 _O p, the gate insulating layer 2 _O gi formed on the gate electrode 2 _O g, and the gate insulating layer 2 _O gi. The oxide semiconductor layer 2 _O se has a source electrode 2 _O ss and a drain electrode 2 _O sd which are connected to the source region and the drain region of the oxide semiconductor layer 2 _O se, respectively. The source electrode 2 _O ss and the drain electrode 2 _O sd are covered with the interlayer insulating layer 2 _O i.

The gate electrode 2 _O g is included in the same gate metal layer as the gate bus line, and the source electrode 2 _O ss and the drain electrode 2 _O sd are included in the same source metal layer as the source bus line. A lead wiring and a terminal are formed using the gate metal layer and the source metal layer, and may have a structure described later with reference to FIG.

TFT 2 _O T is prepared, for example, in the following manner.

As the substrate 1, for example, a polyimide film having a thickness of 15 μm is prepared.

Basecoat 2 _O p deposited (SiO ₂ film: 250 nm / SiN _x film:: 50 nm / SiO ₂ film 500 nm (upper / middle layer / lower layer)) with a plasma CVD method.

Gate metal (Cu film: 300 nm / Ti layer: 30 nm (upper / lower layer)) was deposited by sputtering and patterned by photolithography process (including dry etching step) (gate electrode 2 _O g and the gate bus line or the like Form).

A gate insulating film (SiO ₂ film: 30 nm/SiN _x film: 350 nm (upper layer/lower layer)) is formed by a plasma CVD method.

An oxide semiconductor film (In-Ga-Zn-O-based semiconductor film: 100 nm) is formed by a sputtering method and is patterned by a photolithography step (including a wet etching step) to form an active layer (semiconductor island). To do.

A source metal (Ti film: 100 nm/Al film: 300 nm/Ti film: 30 nm (upper layer/intermediate layer/lower layer)) is formed by a sputtering method, and is patterned by a photolithography process (including a dry etching process) (source electrode). 2 _O ss, drain electrode 2 _O sd, source bus line, etc. are formed).

Activation annealing (for example, annealing at 300° C. for 120 minutes) is performed. In this way, the oxide semiconductor layer 2 _O se is obtained.

After that, an interlayer insulating layer 2 _O i (for example, SiN _x film: 300 nm/SiO ₂ film: 300 nm (upper layer/lower layer)) is formed as a protective film by the plasma CVD method. The interlayer insulating layer 2 _O i can also serve as the above-mentioned inorganic protective layer 2Pa (see FIGS. 2 and 3). Of course, on the interlayer insulating layer 2 _O i, may be further formed an inorganic protective layer 2 Pa.

Next, the structure of another OLED display device according to the embodiment will be described with reference to FIGS. The circuit (backplane) 2 of this OLED display device has the TFT 2 _P T shown in FIG. 9A or the TFT 2 _O T shown in FIG. 9B, and produces the TFT 2 _P T or the TFT 2 _O T. The lead wiring 32A and the terminal 34A are formed by using the gate metal layer and the source metal layer at this time. FIGS. 10A to 10C correspond to FIGS. 4B to 4D, respectively, and the reference numerals of the corresponding constituent elements will be denoted by “A”. Further, the base coat 2p in FIG. 10 corresponds to the base coat 2 _P p in FIG. 9A and the base coat 2 _O p in FIG. 9B, and the gate insulating layer 2gi in FIG. a) corresponding to the gate insulating layer 2 _P gi in FIG. 9B and the gate insulating layer 2 _O gi in FIG. 9B, the interlayer insulating layer 2 i in FIG. 10 corresponds to the interlayer insulating layer 2 _P gi in FIG. 9A. i and the interlayer insulating layer 2 _O i in FIG. 9B.

As shown in FIGS. 10A to 10C, the gate metal layer 2g and the source metal layer 2s are formed on the base coat 2p formed on the substrate 1. Although omitted in FIGS. 3 and 4, it is preferable to form a base coat 2p formed on the substrate 1 with an inorganic insulator.

As shown in FIGS. 10A to 10C, the lead wiring 32A and the terminal 34A are formed as a laminated body of a gate metal layer 2g and a source metal layer 2s. The portion of the lead wire 32A and the terminal 34A formed by the gate metal layer 2g has, for example, the same cross-sectional shape as the gate bus line, and the portion of the lead wire 32A and the terminal 34A formed by the source metal layer 2s is, for example, the source. It has the same cross-sectional shape as the bus line. For example, in the case of a 5.7 type display device of 500 ppi, the line width of the portion formed by the gate metal layer 2g is, for example, 10 μm, the distance between adjacent portions is 16 μm (L/S=10/16), and the source metal is The line width of the portion formed by the layer 2s is, for example, 16 μm, and the distance between adjacent portions is 10 μm (L/S=16/10). Each taper angle θ is less than 90°, preferably less than 70°, and more preferably 60° or less. The taper angle of the portion formed under the organic planarization layer Pb may be 90° or more.

Next, still another embodiment of the present invention will be described with reference to FIGS. According to the following embodiments, an organic EL device capable of improving luminous efficiency and a method for manufacturing the same are provided. The OLED display device exemplified in the following embodiment has the structure of the OLED display device according to the above-described embodiment and has improved mass productivity and moisture resistance reliability, but is independent of the above-described embodiment. In addition, the luminous efficiency can be improved.

An OLED display device according to embodiments described below includes a substrate, a plurality of TFTs formed on the substrate, a plurality of gate bus lines and a plurality of source bus lines each connected to one of the plurality of TFTs. A drive circuit layer having a plurality of terminals and a plurality of lead wirings connecting the plurality of terminals to either the plurality of gate bus lines or the plurality of source bus lines, and an interlayer insulation formed on the drive circuit layer Layer and an organic EL element layer formed on the interlayer insulating layer, each organic EL element having a plurality of organic EL elements connected to one of a plurality of TFTs, and a thin film sealing formed so as to cover the organic EL element layer. And structure. The interlayer insulating layer has a contact hole, and a contact portion that connects the drive circuit layer and the organic EL element layer is formed in the contact hole. The surface of the interlayer insulating layer and the surface of the contact portion are flush with each other. And the arithmetic average roughness Ra is 50 nm or less.

That is, since the arithmetic average roughness Ra of the surface on which the OLED layer is formed is 50 nm or less, the luminous efficiency can be improved. Furthermore, since the arithmetic average roughness Ra of the surface of the contact portion is also 50 nm or less, the luminous efficiency does not decrease even if the contact portion is arranged in the pixel. Therefore, it is not necessary to form the pixel while avoiding the contact portion, so that the degree of freedom in design is increased and the area ratio of the pixel can be improved.

The conductive contact film forming the contact portion, that is, the contact film filling the contact hole of the interlayer insulating film is formed of, for example, a material different from that of the lower electrode. For example, it is a laminated film of a titanium film and a copper film. The titanium film is formed by, for example, the sputtering method, and the copper film is formed on the titanium film by the plating method. For example, it can be formed by an electrolytic plating method using a titanium film as a power feeding layer.

By performing chemical mechanical polishing on the surface of the contact film and the surface of the interlayer insulating film, a surface having an arithmetic average roughness Ra of 50 nm or less can be obtained.

For example, the interlayer insulating layer includes a first inorganic protective layer formed on the drive circuit layer and exposing at least a plurality of terminals, and an organic planarizing layer formed on the first inorganic protective layer. The arithmetic average roughness Ra of the surface of the oxide layer is 50 nm or less (see FIG. 11).

Alternatively, the interlayer insulating layer is formed on the drive circuit layer and exposes at least a plurality of terminals, the first inorganic protective layer, the organic planarizing layer formed on the first inorganic protective layer, and the organic planarizing layer. The second inorganic protective layer formed on the surface of the second inorganic protective layer has an arithmetic average roughness Ra of 50 nm or less (see FIG. 13).

A structure and a manufacturing method of another OLED display device according to another exemplary embodiment of the present invention will be described with reference to FIGS. The OLED display device 100D shown in FIG. 11 and the OLED display device 100E shown in FIG. 13 have the LTPS-TFT 2 _P T shown in FIG. 9A. Of course, instead of the LTPS-TFT 2 _P T, it can either be used an In-Ga-Zn-O-based TFT 2 _O T shown in FIG. 9 (b), it is possible to use other known of the TFT. In addition, in FIG. 11A and FIG. 13A, the common wiring 2 _P c and the contact portion 2 _P cv which are electrically connected to the upper electrode (common electrode) 46 of the OLED are also illustrated. There is.

First, refer to FIG. 11 and FIG. 11A and 11B are schematic cross-sectional views of the OLED display device 100D, and FIGS. 12A to 12C are schematic cross-sectional views for explaining the manufacturing method of the OLED display device 100D. FIG.

The OLED display device 100D shown in FIG. 11A includes a drive circuit layer 2 having a plurality of TFTs and the like formed on a substrate 1, an interlayer insulating layer formed on the drive circuit layer 2, and an interlayer insulating layer. And the thin film sealing structure 10D formed so as to cover the organic EL element layer 3. Here, the interlayer insulating layer has an inorganic protective layer 2Pa and an organic planarizing layer 2Pb formed on the inorganic protective layer 2Pa. The interlayer insulating layer, that is, the inorganic protective layer 2Pa and the organic planarizing layer 2Pb have contact holes CH1 and CH2, and the contact holes CH1 and CH2 connect the drive circuit layer 2 and the organic EL element layer 3 with each other. Portions C1 and C2 are formed. The surface 2Pb_Sb of the organic planarizing layer 2Pb and the surfaces C_Sb of the contact portions C1 and C2 are flush with each other, and the arithmetic average roughness Ra is 50 nm or less.

The OLED layer 3 is formed on the organic planarization layer 2Pb. High flatness is required for the lower electrode and the organic layer (also referred to as an organic EL layer, which includes at least an organic light emitting layer) of the OLED 3. When the flatness is low, for example, the luminous efficiency of the OLED 3 is lowered. Since the organic planarization layer 2Pb is formed from a liquid organic resin material (which may include a solvent) applied to the surface of an element substrate (which will be referred to as an element substrate for simplification during manufacturing), It is possible to absorb the unevenness (step) of the base of the flattening layer 2Pb and form a flat surface. However, the surface of the organic resin film formed of the liquid resin material has a roughness (which can be expressed as “waviness”) in which the arithmetic average roughness Ra exceeds 100 nm to about 300 nm (FIG. 12). (See (a)). When the OLED 3 is formed on the organic flattening layer 2Pb having such surface roughness, the luminous efficiency cannot be sufficiently improved. For example, even if a microresonator structure is adopted, there is a problem that the effect cannot be sufficiently exhibited.

Further, when the lower electrode and the organic layer are formed on the contact hole CH1 of the organic planarizing layer 2Pb, a dent (recess) may be formed on the lower electrode and the organic layer located immediately above the contact hole CH1. This problem can be avoided by providing the contact hole CH1 outside the pixel outside the pixel Pix, but the area ratio of the pixel decreases.

Therefore, in the OLED display device 100D, the surface 2Pb_Sb of the organic planarizing layer 2Pb and the surfaces C_Sb of the contact portions C1 and C2 are flush with each other, and the arithmetic average roughness Ra is 50 nm or less.

Here, FIGS. 12A to 12C are referred to.

FIG. 12A schematically illustrates a state immediately after forming the inorganic protective film 2Pa to be the inorganic protective layer 2Pa on the drive circuit layer 2 and then forming the organic planarizing film 2Pb to be the organic planarizing layer 2Pb. Is shown in. The thickness of the inorganic protective layer 2Pa is, for example, 100 nm or more and 1000 nm or less. The thickness of the organic planarizing film 2Pb is, for example, 1000 nm or more and 5000 nm or less. The inorganic protective film 2Pa is selectively formed in a desired region with a metal mask. In addition, the organic planarizing film 2Pb is selectively applied to a desired region of the element substrate 20, or once formed on the entire surface, an unnecessary portion is removed. The inorganic protective film 2Pa is different from the inorganic protective layer 2Pa in that it has no openings such as the contact holes CH1 and CH2, but the same reference numerals are used for simplicity. Similarly, the organic planarizing film 2Pb is different from the organic planarizing layer 2Pb in that it does not have openings such as the contact holes CH1 and CH2, but the same reference numerals are used for simplicity.

The surface 2Pb_Sa of the organic planarizing film 2Pb immediately after being formed has a roughness with an arithmetic average roughness Ra of more than 100 nm and up to about 300 nm. As shown in FIG. 12B, the contact holes CH1 and CH2 are formed by patterning the inorganic protective film 2Pa and the organic planarizing film 2Pb. This patterning can be performed by dry etching using a mixed gas of O ₂ and CF ₄ , for example. As shown in FIG. 11B, in order to form a portion where the inorganic protective layer 2Pa and the first inorganic barrier layer (not shown) forming the TFE structure 10D are in direct contact, only the inorganic protective layer 2Pa is formed. The remaining portion can be formed by using, for example, a multi-tone mask.

When the conductive contact film C is formed on the patterned organic planarizing film 2Pb, the surface C_Sa of the contact film C has a surface roughness that reflects the surface roughness of the surface 2Pb_Sa of the organic planarizing film 2Pb. become. The contact film C includes, for example, a titanium (Ti) film Ca and a copper (Cu) film Cb formed on the titanium film Ca. The titanium film Ca is formed by, for example, a sputtering method, and the copper film Cb is formed by, for example, a plating method. From the viewpoint of mass productivity, it is preferable to form the copper film Cb by an electrolytic plating method using the titanium film Ca as a power feeding layer. The thickness of the titanium film Ca is, for example, 5 nm or more and 150 nm or less, and more preferably 10 nm or more and 100 nm or less. The thickness of the copper (Cu) film Cb is, for example, 1000 nm or more and 3000 nm or less, and more preferably 1500 nm or more and 2500 nm or less.

Next, as shown in FIG. 12C, the surface 2Pb_Sa of the organic planarizing film 2Pb and the surface C_Sa of the contact film C are subjected to chemical mechanical polishing to form an organic planarizing layer 2Pb having a smooth surface and a contact portion. C1 and C2 are obtained. The contact portions C1 and C2 have C11 and C21 formed of a titanium film Ca and C12 and C22 formed of a copper film Cb, respectively. The surface 2Pb_Sb of the organic planarizing layer 2Pb and the surface C_Sb of the contact layer C are flush with each other, and the arithmetic average roughness Ra thereof is 50 nm or less.

By subjecting the surface 2Pb_Sa of the organic planarization film 2Pb and the surface C_Sa of the contact film C (both Ra>50 nm) shown in FIG. 12B to CMP, the surface 2Pb_Sb having an arithmetic mean roughness Ra≦50 nm is obtained. And the surface C_Sb can be obtained. The arithmetic average roughness Ra of the surface 2Pb_Sb and the surface C_Sb of the contact film C is preferably 30 nm or less. The arithmetic average roughness Ra is preferably as small as possible and the lower limit is not limited. However, considering the relationship between the cost and time required for CMP and the effect, the arithmetic average roughness Ra may be 10 nm or more, and 20 nm or more. May be

Specifically, CMP may be performed using a slurry containing an oxidizing agent such as hydrogen peroxide, an organic acid such as citric acid, or an amino acid such as glycine, and a fumed silica-based or colloidal silica-based polishing agent. Even if such an acid type chemical is used, the polyimide substrate is not eroded. Alternatively, a slurry containing alumina (Al ₂ O ₃ ) powder may be used. The load of the polishing pad is preferably 50 g/cm ² or more and 150 g/cm ² or less, and the rotation speed is preferably 20 rpm or more and 40 rpm or less. The time required for polishing is about 30 seconds to about 90 seconds.

In the OLED display device according to the embodiment of the present invention, the level of smoothing required for suppressing the decrease in light emission efficiency is about one digit lower than the level of smoothing required for the photo process of VLSI ( Since the value of the arithmetic average roughness Ra is about 10 times larger), known polishing agents used for CMP of copper wiring in a semiconductor process can be widely used.

The surface roughness can be measured using, for example, a confocal laser microscope or an atomic force microscope (AFM). The measurement range preferably includes the vicinity of the center of the pixel, and the reference length is appropriately set according to the surface roughness.

In this specification, in order to distinguish between planarization by the organic planarization layer 2Pb and planarization by CMP, planarization by CMP may be referred to as “smoothing”.

Since the arithmetic average roughness Ra of the surface on which the OLED layer 3 is formed is 50 nm or less, the luminous efficiency can be improved. Furthermore, since the arithmetic average roughness Ra of the surfaces C_Sb of the contact parts C1 and C2 is also 50 nm or less, even if the contact part C1 is arranged in the pixel Pix, the luminous efficiency does not decrease. Therefore, it is not necessary to form the pixel Pix while avoiding the contact portion C1, so that the degree of freedom in design is increased and the area ratio of the pixel Pix can be improved.

Referring back to FIG.

Next, the lower electrode 42 and the upper electrode contact portion 43 are formed on the surface C_Sb of the surface 2Pb_Sb contact film C of the organic planarizing film 2Pb. The lower electrode 42 via the contact portion C1, is electrically connected to the drain electrode 2 _P sd. The lower electrode 42 has, for example, a silver (Ag) layer and an ITO layer formed on the silver (Ag) layer. Ag is preferable because it easily forms an alloy with Cu (the main constituent element of the contact portion C1) and the contact resistance can be made almost zero. In the conventional configuration in which the contact portion C1 is not formed, the metal forming the drain electrode 2 _P sd and the ITO layer are in contact with each other in the contact hole CH1, and by adopting the configuration of the present embodiment, the contact resistance is increased. The effect of lowering is also obtained. The thickness of the silver layer is, for example, 50 nm or more and 150 nm or less, and the thickness of the ITO layer is, for example, 5 nm or more and 15 nm or less.

Next, the bank layer 48 that defines each of the plurality of pixels Pix is formed. The bank layer 48 has an opening corresponding to the pixel Pix, and the side surface of the opening has an inclined surface having a forward tapered side surface portion. The slope of the bank layer 48 surrounds each pixel. The bank layer 48 is formed using, for example, a photosensitive resin (for example, polyimide or acrylic resin). The bank layer 48 has a thickness of, for example, 1 μm or more and 2 μm or less. The inclination angle of the slope of the bank layer 48 is 60° or less. If the inclination angle θb of the slope of the bank layer 48 exceeds 60°, defects may occur in the layer located above the bank layer 48.

As described above, it is preferable to perform heating (baking) in order to remove the water contained in the bank layer 48 and the water contained in the organic planarizing layer 2Pb. The heating temperature is preferably 100° C. or higher (eg, 1 hour or longer), and more preferably 250° C. or higher (eg, 15 minutes or longer). The atmosphere may be atmospheric pressure. Heating in a reduced pressure atmosphere can shorten the heating time. The bank layer 48 and the organic flattening layer 2Pb are preferably formed of a resin material having high heat resistance so that thermal deterioration does not occur in the heating (baking) step, for example, polyimide. Is preferred.

After that, manufacturing of the element substrate may be interrupted, and the element substrate may be stored or transported. In that case, as described above, a positive photoresist film may be formed to cover the surface of the element substrate on which the bank layer 48 has been formed. By removing the photoresist film immediately after forming the organic layer 44 after storage or transfer, a clean surface can be obtained. Immediately before the formation of the organic layer 44, the water contained in the organic planarizing layer 2Pb and the bank layer 48 is removed by heating.

Next, the organic layer 44 is formed on the lower electrode 42. The organic layer 44 is formed by, for example, a vapor deposition method. The upper electrode 46 is formed on the organic layer 44. The upper electrode 46 contacts the upper electrode contact portion 43 and is electrically connected to the common wiring 2 _P c via the contact portion 2 _P cv.

The lower electrode 42 and the upper electrode 46 form, for example, an anode and a cathode, respectively. The upper electrode 46 is a common electrode formed over the entire pixels in the active region, and the lower electrode (pixel electrode) 42 is formed for each pixel. When the bank layer 48 exists between the lower electrode 42 and the organic layer 44, holes are not injected from the lower electrode 42 into the organic layer 44. Therefore, the region where the bank layer 48 exists does not function as the pixel Pix, and the bank layer 48 defines the outer edge of the pixel Pix. The bank layer 48 is sometimes called PDL (Pixel Defining Layer).

After forming the OLED 3 in this manner, the TFE structure 10D is formed. The TFE structure 10D has the same structure as the above-mentioned TFE structure 10A. That is, the TFE structure 10D has a first inorganic barrier layer (eg, SiN _x layer) 12, an organic barrier layer 14, and a second inorganic barrier layer (eg, SiN _x layer) 16 from the side closer to the OLED 3. .. As shown in FIG. 11B, the first inorganic barrier layer 12 is in contact with the upper surface and the inclined side surface of the organic planarizing layer 2Pb, and the upper surface of the inorganic protective layer 2Pa. That is, the OLED display device 100D has a structure similar to that of the OLED display device 100A shown in FIG. 3B at the end portion thereof, and has excellent moisture resistance reliability.

Next, an OLED display device 100E and a method for manufacturing the same according to still another embodiment of the present invention will be described with reference to FIGS. 13A and 13B are schematic cross-sectional views of the OLED display device 100E. 14A to 14C are schematic cross-sectional views for explaining the method for manufacturing the OLED display device 100E.

In the OLED display device 100E, the interlayer insulating layer formed between the drive circuit layer 2 and the OLED layer 3 has the second inorganic protective layer 2Pa2 formed on the organic planarizing layer 2Pb. , OLED display device 100D. The first inorganic protective layer 2Pa1 included in the OLED display device 100E is the same as the inorganic protective layer 2Pa included in the OLED display device 100D. 13 and 14, members common to those of the OLED display device 100D are denoted by common reference numerals, and description thereof may be omitted.

As shown in FIG. 13A, in the OLED display device 100E, the organic flattening layer 2Pb has a surface 2Pb_Sb having a large surface roughness (Ra>50 nm), and the second inorganic protective layer 2Pa2 is smooth. It has a converted surface 2Pa2_Sb. The surface 2Pa2_Sb of the second inorganic protective layer 2Pa2 and the surfaces C_Sb of the contact portions C1 and C2 are flush with each other, and the arithmetic average roughness Ra is 50 nm or less. Therefore, the OLED display device 100E has improved luminous efficiency, as in the OLED display device 100D. Further, the degree of freedom in designing the arrangement of the contact portions is increased, and the area ratio of pixels can be improved.

Further, as shown in FIG. 13B, the first inorganic barrier layer 12 includes the upper surface and the inclined side surface of the second inorganic protective layer 2Pa2, the inclined side surface of the organic planarizing layer 2Pb and the upper surface of the first inorganic protective layer 2Pa1. Are in contact. That is, the OLED display device 100E has a structure similar to that of the OLED display device 100A shown in FIG. 3B at the end thereof, and has excellent moisture resistance reliability.

A method for manufacturing the OLED display device 100E will be described with reference to FIGS. Here, the difference from the OLED display device 100D will be mainly described.

As shown in FIG. 14A, the second inorganic protective film 2Pa2 is formed on the organic planarizing layer 2Pb. Similarly to the first inorganic protective film 2Pa1, the second inorganic protective film 2Pa2 is also selectively formed in a desired region by using a mask. Since the second inorganic protective film 2Pa2 is formed on the surface 2Pb_Sa of the organic planarizing film 2Pb, it has the same surface roughness (Ra>50 nm) as the surface 2Pb_Sa of the organic planarizing film 2Pb. For example, when the second inorganic protective film 2Pa2 is formed of a single layer of SiN _x film by the plasma CVD method, for example, the SiN _x film having a thickness of 150 nm or more is formed at a film formation rate not exceeding 10 nm/s. As a result, the second inorganic protective film 2Pa2 that reflects the surface roughness of the base is obtained.

Next, as shown in FIG. 14B, the first inorganic protective film 2Pa1, the organic planarizing film 2Pb, and the second inorganic protective film 2Pa2 formed in desired regions of the element substrate 20 are collectively patterned. Opening portions such as contact holes CH1 and CH2 are formed. This patterning can be performed by dry etching using a mixed gas of O ₂ and CF ₄ , for example. Note that, as shown in FIG. 13B, in order to form a portion where the first inorganic protective layer 2Pa1 and the first inorganic barrier layer (not shown) forming the TFE structure 10E are in direct contact with each other, the first inorganic protective layer 2Pa1 is formed. The portion that leaves only the layer 2Pa1 can be formed, for example, by using a multi-tone mask.

Next, as shown in FIG. 14C, the surface 2Pa2_Sa of the second inorganic protective film 2Pa2 and the surface C_Sa of the contact film C are subjected to chemical mechanical polishing, whereby the second inorganic protective layer 2Pa2 having a smooth surface and Contact portions C1 and C2 are obtained. The surface 2Pa2_Sb of the second inorganic protective layer 2Pa2 and the surface C_Sb of the contact layer C are flush with each other, and the arithmetic average roughness Ra thereof is 50 nm or less. The chemical mechanical polishing can be performed in the same manner as above.

Next, with reference to FIGS. 15A and 15B, a film forming apparatus 200 used for forming an organic barrier layer and a film forming method using the same will be described. FIGS. 15A and 15B are diagrams schematically showing the configuration of the film forming apparatus 200. FIG. 15A shows a chamber containing a photo-curable resin vapor or mist-like photo-curable resin. 15B shows the state of the film forming apparatus 200 in the step of condensing the photocurable resin on the first inorganic barrier layer, and FIG. 15B shows that the photocurable resin is exposed to light and The state of the film-forming apparatus 200 in the process of hardening a curable resin is shown.

The film forming apparatus 200 has a chamber 210 and a partition wall 234 that divides the interior of the chamber 210 into two spaces. A stage 212 and a shower plate 220 are arranged in one space partitioned by a partition wall 234 inside the chamber 210. An ultraviolet irradiation device 230 is arranged in the other space partitioned by the partition wall 234. The space inside the chamber 210 is controlled to a predetermined pressure (vacuum degree) and temperature. The stage 212 has an upper surface that receives the element substrate 20 having a plurality of OLEDs 3 on which the first inorganic barrier layer is formed, and the upper surface can be cooled to, for example, −20° C.

The shower plate 220 is arranged so as to form a gap 224 between the shower plate 220 and the partition wall 234, and has a plurality of through holes 222. The vertical size of the gap portion 224 may be, for example, 100 mm or more and 1000 mm or less. The acrylic monomer (vapor or mist) supplied to the gap 224 is supplied to the space on the stage 212 side in the chamber 210 from the plurality of through holes 222 of the shower plate 220. The acrylic monomer is heated if necessary. The acrylic monomer vapor or atomized acrylic monomer 26p adheres to or contacts the first inorganic barrier layer of the element substrate 20. The acrylic monomer 26 is supplied from the container 202 into the chamber 210 at a predetermined flow rate. The container 202 is supplied with the acrylic monomer 26 via the pipe 206 and nitrogen gas from the pipe 204. The flow rate of the acrylic monomer to the container 202 is controlled by the mass flow controller 208. The shower plate 220, the container 202, the pipes 204 and 206, the mass flow controller 208, and the like constitute a raw material supply device.

The ultraviolet irradiation device 230 has an ultraviolet light source and an optional optical element. The ultraviolet light source may be, for example, an ultraviolet lamp (for example, a mercury lamp (including high pressure and ultrahigh pressure), a mercury xenon lamp or a metal halide lamp). The optical element is, for example, a reflecting mirror, a prism, a lens, and a diffractive element.

When the ultraviolet irradiation device 230 is arranged at a predetermined position, it emits light having a predetermined wavelength and intensity toward the upper surface of the stage 212. The partition wall 234 and the shower plate 220 are preferably formed of a material having a high ultraviolet ray transmittance, for example, quartz.

The organic barrier layer 14 can be formed using the film forming apparatus 200, for example, as follows. Here, an example in which an acrylic monomer is used as the photocurable resin will be described.

Acrylic monomer 26p is supplied into the chamber 210. The element substrate 20 is cooled to, for example, −15° C. on the stage 212. The acrylic monomer 26p is condensed on the first inorganic barrier layer 12 of the element substrate 20. By controlling the conditions at this time, the liquid acrylic monomer can be unevenly distributed only around the convex portion of the first inorganic barrier layer 12. Alternatively, the conditions are controlled so that the acrymonomer condensed on the first inorganic barrier layer 12 forms a liquid film.

By adjusting the viscosity and/or the surface tension of the liquid photocurable resin, it is possible to control the thickness of the liquid film and the shape (concave shape) of the portion in contact with the convex portion of the first inorganic barrier layer 12. For example, the viscosity and the surface tension depend on the temperature, and thus can be controlled by adjusting the temperature of the element substrate. For example, the size of the solid portion existing on the flat portion can be controlled by the shape (concave shape) of the portion of the liquid film that is in contact with the convex portion of the first inorganic barrier layer 12 and the condition of the ashing process performed later.

Next, the acrylic monomer on the first inorganic barrier layer 12 is cured by irradiating the entire upper surface of the element substrate 20 with ultraviolet light 232 using the ultraviolet irradiation device 230. As the ultraviolet light source, for example, a high pressure mercury lamp having a main peak at 365 nm is used, and the irradiation is performed at an ultraviolet intensity of, for example, 12 mW/cm ² for about 10 seconds.

The organic barrier layer 14 made of acrylic resin is formed in this manner. The tact time of the process of forming the organic barrier layer 14 is, for example, less than about 30 seconds, and the mass productivity is very high.

The organic barrier layer 14 may be formed only around the protrusions by curing the liquid film photocurable resin and then performing ashing treatment. The ashing process may be performed also when the organic barrier layer 14 is formed by curing the unevenly distributed photocurable resin. By the ashing treatment, the adhesiveness between the organic barrier layer 14 and the second inorganic barrier layer 16 can be improved. That is, the ashing process may be used not only to remove the excess portion of the organic barrier layer once formed, but also to modify (hydrophilize) the surface of the organic barrier layer 14.

The ashing can be performed using a known plasma ashing device, photoexcitation ashing device, and UV ozone ashing device. For example, plasma ashing using at least one gas of N ₂ O, O ₂ and O ₃ or a combination thereof with UV irradiation may be performed. When SiN _x films are formed as the first inorganic barrier layer 12 and the second inorganic barrier layer 16 by the CVD method, N ₂ O is used as a raw material gas, and therefore the apparatus can be simplified by using N ₂ O for ashing. The advantage is obtained.

When ashing is performed, the surface of the organic barrier layer 14 is oxidized and modified to be hydrophilic. Further, the surface of the organic barrier layer 14 is shaved substantially uniformly, and extremely fine irregularities are formed, so that the surface area is increased. The effect of increasing the surface area when ashing is performed is greater on the surface of the organic barrier layer 14 than on the surface of the first inorganic barrier layer 12 which is an inorganic material. Therefore, since the surface of the organic barrier layer 14 is modified to be hydrophilic and the surface area is increased, the adhesion with the second inorganic barrier layer 16 is improved.

After that, the second inorganic barrier layer 16 is transferred to a CVD chamber for forming the second inorganic barrier layer 16, and the second inorganic barrier layer 16 is formed under the same conditions as the first inorganic barrier layer 12, for example. Since the second inorganic barrier layer 16 is formed in the region where the first inorganic barrier layer 12 is formed, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are formed in the non-solid portion of the organic barrier layer 14. An inorganic barrier layer junction is formed that is in direct contact with. Therefore, as described above, the water vapor in the atmosphere is suppressed/prevented from reaching the active region through the organic barrier layer.

The first inorganic barrier layer 12 and the second inorganic barrier layer 16 are formed as follows, for example. By a plasma CVD method using SiH ₄ and N ₂ O gas, for example, in a state where the temperature of the substrate (OLED3) to be film-formed is controlled at 80° C. or less, a film-forming speed of 400 nm/min and a thickness of 400 nm An inorganic barrier layer can be formed. The inorganic barrier layer thus obtained has a refractive index of 1.84 and a visible light transmittance of 400 nm of 90% (a thickness of 400 nm). The absolute value of the film stress is 50 MPa.

In addition to the SiN _x layer, a SiO ₂ layer, a SiO _x N _y (x>y) layer, a SiN _x O _y (x>y) layer, an Al ₂ O ₃ layer, or the like can be used as the inorganic barrier layer. .. The photocurable resin contains, for example, a vinyl group-containing monomer. Among them, acrylic monomers are preferably used. A photopolymerization initiator may be mixed with the acrylic monomer, if necessary. Various known acrymonomers can be used. A plurality of acrylic monomers may be mixed. For example, a bifunctional monomer and a trifunctional or higher functional monomer may be mixed. Moreover, you may mix an oligomer. The viscosity of the photocurable resin at room temperature (for example, 25° C.) before curing is preferably not more than 10 Pa·s, and particularly preferably 1 to 100 mPa·s. If the viscosity is high, it may be difficult to form a thin liquid film having a thickness of 500 nm or less.

Although the embodiments of the OLED display device having the flexible substrate and the manufacturing method thereof have been described above, the embodiments of the present invention are not limited to the exemplified ones and are formed on a substrate having no flexibility (for example, a glass substrate). It can be widely applied to an organic EL device (for example, an organic EL lighting device) having an organic EL element and a thin film sealing structure formed on the organic EL element.

Embodiments of the present invention are used in an organic EL device and a method for manufacturing the same. The embodiment of the present invention is particularly preferably used for a flexible organic EL display device and a manufacturing method thereof.

1: Flexible board 2: Backplane (circuit)
2Pa: Inorganic protective layer (first inorganic protective layer), inorganic protective film (first inorganic protective film)
2Pa1: first inorganic protective layer, first inorganic protective film 2Pa2: second inorganic protective layer, second inorganic protective film 2Pb: organic planarizing layer, organic planarizing film 3: organic EL element 4: polarizing plate 10: thin film sealing Stop structure (TFE structure)
12: First inorganic barrier layer (SiN _x layer)
14: Organic barrier layer (acrylic resin layer)
16: Second inorganic barrier layer (SiN _x layer)
20: Element substrate 100, 100A, 100D, 100E: Organic EL display device 200: Film forming device

Claims (1)

Board,
A plurality of TFTs formed on the substrate, a plurality of gate bus lines and a plurality of source bus lines each connected to one of the plurality of TFTs, a plurality of terminals, the plurality of terminals, and the plurality of terminals. A drive circuit layer having a plurality of lead wirings connecting any of the gate bus lines or the plurality of source bus lines of
An interlayer insulating layer formed on the drive circuit layer,
An organic EL element layer having a plurality of organic EL elements formed on the interlayer insulating layer, each organic EL element being connected to one of the plurality of TFTs;
A thin film sealing structure formed so as to cover the organic EL element layer,
The interlayer insulating layer has a contact hole,
In the contact hole, a contact portion that connects the drive circuit layer and the organic EL element layer is formed,
An organic EL device in which the surface of the interlayer insulating layer and the surface of the contact portion are flush with each other, and the arithmetic average roughness Ra is 50 nm or less.

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