CN110429204A - Silicon substrate micro display screen and preparation method thereof - Google Patents
Silicon substrate micro display screen and preparation method thereof Download PDFInfo
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- CN110429204A CN110429204A CN201910694849.6A CN201910694849A CN110429204A CN 110429204 A CN110429204 A CN 110429204A CN 201910694849 A CN201910694849 A CN 201910694849A CN 110429204 A CN110429204 A CN 110429204A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides a kind of silicon substrate micro display screens and preparation method thereof.The silicon substrate micro display screen preparation method mainly comprises the steps that S1: providing a silicon base, anode layer is deposited in the silicon base；S2: planarizing layer is grown in the silicon base and anode layer；S3: the anode layer and the planarizing layer are put down using the throwing of CMP chemical mechanical milling tech；S4: electrofluid printing technique is used, forms luminescent layer on the anode layer, while forming black-matrix layer on the planarizing layer；S5: metal layer is formed on the luminescent layer and black-matrix layer；S6: being packaged the metal layer, to obtain silicon substrate micro display screen.Compared to the prior art, the present invention breach the high-precision metal mask plate of high pixel density physics limit, it can be achieved that 2000 and more high pixel density display.
Description
Technical field
The present invention relates to a kind of silicon substrate micro display screens and preparation method thereof, belong to display panel manufacturing field.
Background technique
Current OLED display screen body mostly uses greatly the different OLED materials of vapor deposition to realize that OLED is graphical, and this method is in picture
Plain density ppi is that there is no problem when being lower than 700, but when pixel density ppi is higher than 800, and existing technology of preparing will be into
Enter physics bottleneck.
Therefore, the colorful display for realizing high pixel density is current technical problem urgently to be solved.
Summary of the invention
The purpose of the present invention is to provide a kind of silicon substrate micro display screens and preparation method thereof, graphical to break through existing vapor deposition
Physics limit, realize the display of high pixel density.
To achieve the above object, the present invention provides a kind of silicon substrate micro display screen preparation methods, comprising the following steps:
S1: a silicon base is provided, anode layer is deposited in the silicon base；
S2: planarizing layer is grown in the silicon base and anode layer；
S3: the anode layer and the planarizing layer are put down using the throwing of CMP chemical mechanical milling tech；
S4: electrofluid printing technique is used, forms luminescent layer, while the shape on the planarizing layer on the anode layer
At black-matrix layer；
S5: metal layer is formed on the luminescent layer and black-matrix layer；
S6: being packaged the metal layer, to obtain silicon substrate micro display screen.
As a further improvement of the present invention, the step S6 is specifically included:
S61: thin film encapsulation technology is used, forms thin-film encapsulation layer on the metal layer；
S62: the thin-film encapsulation layer is packaged using glass cover-plate.
As a further improvement of the present invention, step S62 specifically: UV glue is coated in the thin-film encapsulation layer, by glass
Glass cover board is covered in the thin-film encapsulation layer, and is fixedly connected with the thin-film encapsulation layer with glass cover-plate by UV glue.
As a further improvement of the present invention, the silicon base is equipped with several regularly arranged via holes, the anode layer
Including several anode units in pixel graphics arrangement, each anode unit is corresponded with corresponding via hole.
As a further improvement of the present invention, the width of the anode unit is 5 microns.
As a further improvement of the present invention, the luminescent layer and the black-matrix layer interval are arranged, and are located at same
On horizontal plane.
As a further improvement of the present invention, the luminescent layer includes the sub-pixel for being spaced apart from each other setting, the sub-pixel
Second sub-pixel of the first sub-pixel, capable of emitting green light including capable of emitting feux rouges and the third sub-pixel of capable of emitting blue light.
As a further improvement of the present invention, the distance between two neighboring sub-pixel is 8 microns.
As a further improvement of the present invention, the metal layer is grown in the luminescent layer and black-matrix layer by metallic aluminium
On, and as cathode layer；The planarizing layer grows in the silicon base and anode layer and is formed using PLN as material.
To achieve the above object, the present invention also provides a kind of silicon substrate micro display screens, and the silicon substrate micro display screen is by above-mentioned
Silicon substrate micro display screen preparation method prepares.
The beneficial effects of the present invention are: the present invention throws flat anode layer and planarizing layer using CMP chemical mechanical milling tech,
Black-matrix layer is formed on planarizing layer simultaneously, to can not only increase effective contact area of anode layer, utmostly
Increase OLED luminous intensity, while can also prevent from going out optical crosstalk between sub-pixel.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silicon substrate micro display screen of the present invention.
Fig. 2 is the silicon base of the screen of silicon substrate micro display shown in Fig. 1 and the structural schematic diagram of anode layer.
Fig. 3 is the schematic diagram that planarizing layer is formed on anode layer shown in Fig. 2.
Fig. 4 is to carry out throwing the structural schematic diagram after putting down to planarizing layer shown in Fig. 3.
Fig. 5 is the schematic diagram that luminescent layer and black-matrix layer are formed on planarizing layer shown in Fig. 4.
Fig. 6 is the schematic diagram that metal layer is formed on luminescent layer and black-matrix layer shown in Fig. 5.
Specific embodiment
It is right as follows in conjunction with drawings and embodiments to keep the purpose, technical solution and effect of the application clearer, clear
The application is further described.
The present invention provides a kind of silicon substrate micro display screen and preparation method thereof, it is mainly used for solving existing OLED vapor deposition figure
There are physics limits for shape technology, there is a problem of the graphical difficulty of high pixel density.
As shown in Figure 1, the silicon substrate micro display screen includes: the planarizing for driving backboard 10, being formed on driving backboard 10
Layer 20, the luminescent layer 21 being formed on the planarizing layer 20 and black-matrix layer (Black Matrix, BM layer) 23 and use
In the encapsulated layer 60 for encapsulating the luminescent layer 21 and black-matrix layer 23.
The driving backboard 10 includes silicon base 12 and the anode layer 22 for being formed in 12 one side of silicon base, the hair
Photosphere 21 is formed on the anode layer 22 in such a way that electrofluid prints.
Specifically, the silicon base 12 is equipped with several regularly arranged via holes 11, and the anode layer 22 includes several
In the anode unit that pixel graphics are arranged, and each anode unit is corresponded with corresponding via hole 11, the anode unit
For indium oxide tin film (ITO).In the present embodiment, the width of the anode unit is 5 microns, but should not be as limit.
The planarizing layer 20 grows in the silicon base 12 and anode layer 22 and is formed using PLN as material.Certainly, In
After forming the planarizing layer 20, also need using CMP chemical mechanical milling tech to the planarizing layer 20 and anode layer 22 into
Row, which is thrown, puts down, so that anode layer 22 is exposed to the planarizing layer 20.
The luminescent layer 21 include organic luminous layer, the hole injection layer between anode layer 22 and organic luminous layer and
Hole transmission layer and electron injecting layer and electron transfer layer between cathode layer and organic luminous layer.Further, empty
Cave transport layer is between organic luminous layer and hole injection layer；Electron transfer layer be located at organic luminous layer and electron injecting layer it
Between.
The luminescent layer 21 includes the sub-pixel for being spaced apart from each other setting.The sub-pixel includes the first sub-pixel 211, second
Sub-pixel 212 and third sub-pixel 213, and the distance between two neighboring sub-pixel is 8 microns.Specifically, described first
Sub-pixel 211 is the OLED of capable of emitting feux rouges R, and second sub-pixel 212 is the OLED of capable of emitting green light G, third
Pixel 213 is the OLED of capable of emitting blue light B, to can realize that tri- color of RGB is shown.
The black-matrix layer 23 is formed on the planarizing layer 20 in such a way that electrofluid prints, meanwhile, the hair
Photosphere 21 and the black-matrix layer 23 interval are arranged, and are located in same level.
Metal layer 50 is additionally provided between the luminescent layer 21 and encapsulated layer 60.The metal layer 50 is grown in institute by metallic aluminium
It states in luminescent layer 21 and black-matrix layer 23, the cathode layer that can be used as luminescent layer 21 uses.The metal layer 50 is formed in black
In matrix layer 23, the optical crosstalk between two neighboring sub-pixel can be prevented.
The encapsulated layer 60 includes thin-film encapsulation layer 61, and the metal layer 50 is completely covered in the thin-film encapsulation layer 61.Institute
Stating encapsulated layer 60 further includes glass cover-plate 63, and the glass cover-plate 63 is encapsulated in the top of the thin-film encapsulation layer 61 and covers completely
Cover the thin-film encapsulation layer 61.Specifically, the glass cover-plate 63 is fixedly connected by UV glue 62 with the thin-film encapsulation layer 61.
The thin-film encapsulation layer 61 can be and stack inorganic thin film on organic film, inorganic thin film or organic film.
As shown in Figures 1 to 6, silicon substrate micro display screen preparation method mainly comprises the steps that
S1: providing a silicon base 12, and anode layer 22 is deposited in the silicon base 12, drives backboard 10 to be formed；At this point,
Each anode unit of the anode layer 22 is corresponded with corresponding via hole 11, specific as shown in Figure 2.
S2: in the silicon base 12 and anode layer 22, PLN Material growth planarizing layer 20 is utilized；At this point, described smooth
Change layer 20 and the silicon base 12 and anode layer 22 is completely covered, it is specific as shown in Figure 3.
S3: the anode layer 22 and the planarizing layer 20 are put down using the throwing of CMP chemical mechanical milling tech；Throw reef knot beam
Afterwards, the anode layer 22 is exposed to the planarizing layer 20, specific as shown in Figure 4.
S4: using electrofluid printing technique, luminescent layer 21 is formed on the anode layer 22, while in the planarizing layer
Black-matrix layer 23 is formed on 20；At this point, the luminescent layer 21 is formed on the anode layer 22, and the first sub-pixel 211,
Two sub-pixels 212 and third sub-pixel 213 are respectively formed on corresponding anode unit, and the black-matrix layer 23 is formed and put down
It is specific as shown in Figure 5 on integralization layer 20.
S5: metal layer 50 is formed on the luminescent layer 21 and black-matrix layer 23；It is specific as shown in Figure 6.
S6: being packaged the metal layer 50, to obtain silicon substrate micro display screen；It is specific as shown in Figure 1.
The step S6 is specifically included:
S61: using thin film encapsulation technology, and thin-film encapsulation layer 61 is formed on the metal layer 50；
S62: being packaged the thin-film encapsulation layer 61 using glass cover-plate 63, and is fixed on using UV glue 62 described thin
The top of film encapsulated layer 61.
Step S62 specifically: coat UV glue 62 in the thin-film encapsulation layer 61, glass cover-plate 63 is covered on described thin
On film encapsulated layer 61, and it is fixedly connected with the thin-film encapsulation layer 61 with glass cover-plate 63 by UV glue 62.
In conclusion the present invention is 1. by using high-resolution driving backboard 10, it can be achieved that prepare 2000ppi's or more
Sharpness screen body；2. throwing flat anode layer 22 and planarizing layer 20 using CMP chemical mechanical milling tech, sun can be increased
Effective contact area of pole layer 22, increases OLED luminous intensity to the greatest extent；3. by electrofluid printing technique in anode layer
22 tri- color OLED of printout surface RGB is, it can be achieved that tri- color of RGB of silicon substrate micro display screen is shown；4. by planarizing layer 20
Black-matrix layer 23 is formed, so as to prevent from generating optical crosstalk between two neighboring sub-pixel.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferred embodiment to this hair
It is bright to be described in detail, those skilled in the art should understand that, it can modify to technical solution of the present invention
Or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. a kind of silicon substrate micro display screen preparation method, which comprises the following steps:
S1: a silicon base is provided, anode layer is deposited in the silicon base；
S2: planarizing layer is grown in the silicon base and anode layer；
S3: the anode layer and the planarizing layer are put down using the throwing of CMP chemical mechanical milling tech；
S4: using electrofluid printing technique, form luminescent layer on the anode layer, while being formed on the planarizing layer black
Color matrix layer；
S5: metal layer is formed on the luminescent layer and black-matrix layer；
S6: being packaged the metal layer, to obtain silicon substrate micro display screen.
2. silicon substrate micro display screen preparation method according to claim 1, which is characterized in that the step S6 is specifically included:
S61: thin film encapsulation technology is used, forms thin-film encapsulation layer on the metal layer；
S62: the thin-film encapsulation layer is packaged using glass cover-plate.
3. silicon substrate micro display screen preparation method according to claim 2, which is characterized in that step S62 specifically: described
UV glue is coated in thin-film encapsulation layer, glass cover-plate is covered in the thin-film encapsulation layer, and seals the film by UV glue
Dress layer is fixedly connected with glass cover-plate.
4. silicon substrate micro display screen preparation method according to claim 1, it is characterised in that: the silicon base is equipped with several
Regularly arranged via hole, the anode layer include it is several in pixel graphics arrangement anode unit, each anode unit with phase
The via hole answered corresponds.
5. silicon substrate micro display screen preparation method according to claim 4, it is characterised in that: the width of the anode unit is
5 microns.
6. silicon substrate micro display screen preparation method according to claim 1, it is characterised in that: the luminescent layer and the black
The setting of matrix layer interval, and be located in same level.
7. silicon substrate micro display screen preparation method according to claim 1, it is characterised in that: the luminescent layer includes mutual
Every the sub-pixel of setting, the sub-pixel include the first sub-pixel of capable of emitting feux rouges, capable of emitting green light the second sub-pixel and
The third sub-pixel of capable of emitting blue light.
8. silicon substrate micro display screen preparation method according to claim 7, it is characterised in that: between two neighboring sub-pixel
Distance is 8 microns.
9. silicon substrate micro display screen preparation method according to claim 1, it is characterised in that: the metal layer is given birth to by metallic aluminium
It grows on the luminescent layer and black-matrix layer, and as cathode layer；The planarizing layer is using PLN as material, in the silicon substrate
It grows and is formed on bottom and anode layer.
10. a kind of silicon substrate micro display screen, it is characterised in that: the silicon substrate micro display screen is as described in any one of claim 1-9
Silicon substrate micro display screen preparation method prepare.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259704A (en) * | 2020-10-21 | 2021-01-22 | 安徽熙泰智能科技有限公司 | Process method for preventing cathode on substrate from cracking |
| CN113193022A (en) * | 2021-04-26 | 2021-07-30 | 睿馨（珠海）投资发展有限公司 | High-resolution AMLOED display device and preparation method thereof |
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