CN101373721A - 集成电路结构的制造方法及内插板晶片的处理方法 - Google Patents

集成电路结构的制造方法及内插板晶片的处理方法 Download PDF

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Publication number
CN101373721A
CN101373721A CNA2008100955799A CN200810095579A CN101373721A CN 101373721 A CN101373721 A CN 101373721A CN A2008100955799 A CNA2008100955799 A CN A2008100955799A CN 200810095579 A CN200810095579 A CN 200810095579A CN 101373721 A CN101373721 A CN 101373721A
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built
inserted plate
plate wafer
wafer
tool
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CN101373721B (zh
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李建勋
宋明忠
赵智杰
郭祖宽
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

本发明提供一种集成电路结构的制造方法及内插板芯片的处理方法，该制造方法包括提供内插板晶片，将内插板晶片固定到工作晶片上，使内插板晶片的背面薄化，在薄化步骤之后，将工作晶片从内插板晶片移开，将内插板晶片固定到治具上，以及将芯片接合至内插板晶片上。本发明所提供的方法及设备有利于处理超薄内插板芯片。

Description

集成电路结构的制造方法及内插板晶片的处理方法
技术领域
本发明涉及集成电路的工艺，特别涉及芯片组装至内插板晶片上的方法及设备。
背景技术
内插板(interposer)通常用在集成电路的封装上，以连接半导体芯片和封装组件，例如半导体芯片上通常具有紧密间隔的接合焊盘，而不易接合至封装基底上，因此利用内插板使半导体芯片接合的间距增加。在此例中，每一个内插板具有第一面和第二面，在第一面上具有较小间距的铜柱对应至半导体芯片，在第二面上具有间距比铜柱大的接合焊盘。
通常使用有机材料、陶瓷或相似的材料形成内插板，目前已经有使用硅作为基础材料的内插板，硅内插板的优点为与半导体芯片中的硅基底具有相同的热膨胀系数，因此在硅内插板与含硅的半导体芯片之间所产生的应力较小。此外，虽然目前的技术已经够成熟以形成超薄硅晶片，但是当内插板的厚度降至约5密尔(mil)或其以下时，在使用硅内插板的工艺中会产生一些问题，特别是在未来世代的集成电路中，这样的内插板晶片太薄，以致于不能使用传统的封装技术传送。
一种用以处理超薄内插板晶片的方法为使用紫外光胶布将其附着至玻璃晶片上，并在芯片附着至内插板晶片后移除玻璃晶片，然而，在后续芯片附着的回焊工艺中需要高于400℃的温度，这对于紫外光胶布而言温度太高，因此，需要一种新的方法以处理超薄内插板晶片。
发明内容
依据本发明的一实施例，提供一种集成电路结构的制造方法，包括提供内插板晶片，将内插板晶片固定到工作晶片上，使内插板晶片的背面薄化，在薄化步骤之后，将工作晶片从内插板晶片移开，将内插板晶片固定到治具上，以及将芯片接合至内插板晶片上。
依据本发明的另一实施例，提供一种内插板晶片的处理方法，包括提供一设备，其包含：晶片传输机，用以传输内插板晶片，其中晶片传输机包括第一机械手臂用以转移内插板晶片，以及第二机械手臂用以从工作晶片上卸下内插板晶片；治具，用以放置内插板晶片，其中治具包括一平面；以及固定元件，用以固定内插板晶片到治具上。该处理方法还包括将工作晶片附着至内插板晶片上，将内插板晶片的背面薄化，使用第二机械手臂将工作晶片从内插板晶片卸下，使用第一机械手臂将内插板晶片翻转，使得内插板晶片的正面朝下，并且传送内插板晶片到治具的平面上，使用固定元件固定内插板晶片，以及将芯片接合到内插板晶片上。
依据本发明的又另一实施例，提供一种集成电路结构的制造方法，包括提供内插板晶片，使用紫外光胶布将内插板晶片固定到工作晶片上，将内插板晶片的背面薄化，暴露出在内插板晶片内的多个铜柱，将内插板晶片的背面放置在真空吸盘上，将紫外光胶布暴露在紫外光下，将工作晶片从内插板晶片移开，将内插板晶片翻转并固定到治具上，以及使用治具传送内插板晶片。
本发明所提供的方法及设备有利于处理超薄内插板晶片。
为了让本发明的上述目的、特征、及优点能更明显易懂，以下配合附图，作详细说明如下：
附图说明
图1至图6B为处理内插板晶片及固定内插板晶片至治具上的中间过程的剖面图。
图7为容纳治具的示范性的治具卡匣的示意图。
图8和图9为接合芯片至内插板晶片上的示意图。
其中，附图标记说明如下：
20～内插板晶片；　　　　　　　　　　　　22～基础材料；
24～铜柱；                              26～焊锡凸块或锡球；
28～紫外光胶布；                        30～工作晶片或玻璃晶片；
31～基础材料的背面；                    32、36～机械手臂；
34～机械手臂的前端；　　　38～真空吸盘；
39～紫外光；              40～治具；
42～平板；                44～自动钳子；
46～插栓；                48～胶布；
50～治具卡匣；            52～架子；
60～芯片；                62～凸块；
64～切割线；              66～内插板。
具体实施方式
本发明的优选实施例的制造和使用如下所述，然而本发明还提供许多可应用的发明概念，其可以在各种特殊的应用中实行，在此所提及的特定实施例仅说明以特定方式去使用与制造本发明，并非用以限定本发明的范围。
在此提供薄的内插板晶片的处理方法以及其使用的新设备，进行本发明的优选实施例的中间过程如下所述，在各种附图及本发明的实施例中，类似的元件使用相似的符号标示。
参阅图1，首先提供内插板晶片20，其包含基础材料22以及在基础材料内的铜柱24，在优选实施例中，基础材料22包含硅；在另一实施例中，基础材料22包含其他常用的半导体或介电材料，例如有机材料或陶瓷。每一个铜柱24具有第一末端埋在基础材料22内，以及第二末端连接至焊锡凸块26或锡球26，其中该连接可包含金属线(未图示)、连接金属线的导孔(未图示)以及具有金属线和导孔在其内的介电层(未图示)。铜柱24的第一末端以对应至半导体芯片的接合焊盘(未图示)的方式排列，在后续的工艺步骤中，半导体芯片将会接合至内插板晶片20。
在图2中，工作晶片(handling wafer)30经由紫外光(UV)胶布28固定至内插板晶片20上，在说明书的所有描述中，工作晶片30也可以称为玻璃晶片(glass wafer)30，因为其通常由玻璃形成，此外，工作晶片30也可由其他材料制成。紫外光胶布28具有粘性，并且在暴露于紫外光后失去黏性。接下来，将基础材料22的背面31(参阅图1)薄化，直到铜柱24的第一末端暴露出来为止，在薄化步骤之后，内插板晶片20的厚度T1可能会小于约10密尔(mil)，较佳为小于约5密尔。然后，进行蚀刻步骤使基础材料22的背面31进一步地凹陷，使得每一个铜柱24的顶端部分竖立于背面31外。
图3说明如何卸下玻璃晶片30，内插板晶片20和附着的玻璃晶片30转移至真空吸盘38上，其连接至机械手臂36，以机械手臂36可使真空吸盘38移动，且可使其上面翻转朝下。将紫外光胶布28暴露在紫外光下，如箭头39所标示，使其失去黏性。机械手臂32具有可传送玻璃晶片30的前端34，其可以卸下玻璃晶片30和紫外光胶布28。在玻璃晶片30卸下的期间，内插板晶片20都固定在真空吸盘38上，其结果如图4所示。
参阅图5，除去玻璃晶片30和紫外光胶布28之后，使用机械手臂36将内插板晶片20的上面朝下翻转，并将内插板晶片20转移至治具40上，其在后续工艺步骤中承载内插板晶片20。机械手臂36还可旋转内插板晶片20，使得内插板晶片20放置在希望的方位上，其中在内插板晶片20上的刻痕可决定正确的位置。焊锡凸块26较佳为放置在平板42上，平板42较佳为包括绝缘材料，更佳为够柔软以保护焊锡凸块26免于受到机械损害，并且够硬以维持内插板晶片20基本的平坦性，在一示范性的实施例中，平板42由聚酰亚胺制成。
在图6A中，内插板晶片20以自动钳子(clipper)44固定在治具(fixture)40上，自动钳子44包含插栓46接触内插板晶片20，插栓46可由内插板晶片20的上面以及/或下面承载内插板晶片20，插栓46较佳为具有柔软的表面材料例如橡胶，以降低任何可能对内插板晶片20造成的损害。在另一实施例中，如图6B所示，使用胶布48粘贴在内插板晶片20上，以保持内插板晶片20在适当的位置，胶布48可为环状，且只贴在内插板晶片20的外边缘，在一示范性的实施例中，胶布48的宽度W约为5mm。在后续的步骤中，如果以半导体晶片代替多个芯片附着在内插板晶片20上，胶布48的厚度T2较佳为小于在半导体晶片和内插板晶片20之间的焊锡凸块的高度，其厚度较佳为小于约4密尔(mil)。
治具40提供内插板晶片20机械性支撑，使得内插板晶片20即使很薄仍可以被搬动，治具40以及附着的内插板晶片20在后续的工艺步骤中被视为整体处理，例如搬运多个内插板晶片时，每一个内插板晶片被固定在一个治具40上，并且将治具40放置于治具卡匣中运送。图7说明示范性的治具卡匣50，其中包含多个架子52，每一个架子用以承载一个治具40。由于治具40较佳为矩形(由俯视图观之)，且较可能为正方形，治具卡匣50的架子52较佳也为矩形。内插板晶片20以及承载的治具40一起被存储及搬运，直到芯片接合后且内插板晶片20准备被切割为止，或是直到内插板不再需要支撑为止，例如芯片接合至内插板晶片上且涂布底部填胶之后，内插板晶片20的强度可能够大至足以单独处理，而不需治具40的支撑。
图8说明将芯片60固定到内插板晶片20上，以预先附着在芯片60上的凸块62固定到铜柱24上。虽然附图中只有显示一个芯片60，但在实际的例子中，许多芯片将会被接合至内插板晶片20内多个一样的内插板上。在另一实施例中，将包含多个芯片的半导体晶片接合至内插板晶片20上。然后，将凸块62回焊，接合芯片60至铜柱24上。
参阅图9，将内插板晶片20以及附着的芯片60从治具40移开，并且沿着切割线64切割，所得到的结构包含多个芯片60，每一个芯片接合至内插板66，然后，接合的芯片可以更进一步地封装，例如接合至封装基底上。
如前述所讨论，处理内插板晶片20的功能，较佳为与设备整合在一起，该设备较佳为包含晶片传输机，以传送内插板晶片20。机械手臂32和36(参阅图3)可以转移、旋转以及翻转内插板晶片，且其较佳为也包含在晶片传输机内。此外，晶片传输机还包含可以从内插板卸下玻璃晶片的机械手臂。另外，设备内还包含晶片刻痕对准器，以决定内插板晶片20的位置，使得芯片60上的凸块62可准确地接合至铜柱24上(参阅图8)，该设备还包含治具40、自动钳子44以及治具卡匣50(参阅图7)。
本发明的实施例具有多项优点，使用整合性设备可形成并传输超薄内插板晶片，例如厚度小于约5密尔的内插板晶片，并且可接合芯片至超薄内插板晶片上，而不需担心内插板晶片在处理及传送的工艺中会断裂。随着内插板晶片厚度的降低，包含内插板接合至晶片上所得到的半导体封装的厚度也会降低。
虽然本发明已揭示优选实施例如上，然而其并非用以限定本发明，任何熟悉此技术的技术人员，在不脱离本发明的精神和范围内，应当可做一些变动与润饰，因此本发明的保护范围应当视随附的权利要求所限定的范围为准。

Claims (14)

1.一种集成电路结构的制造方法，包括：
提供一内插板晶片；
将该内插板晶片固定到一工作晶片上；
将该内插板晶片的一背面薄化；
在该薄化步骤之后，将该工作晶片从该内插板晶片移开；
将该内插板晶片固定到一治具上；以及
将一芯片接合至该内插板晶片上。
2.如权利要求1所述的集成电路结构的制造方法，其中该内插板晶片的厚度在该薄化步骤之后小于约10密尔(mil)。
3.如权利要求1项所述的集成电路结构的制造方法，其中将该内插板晶片固定到该治具上的步骤包括：
将该内插板晶片的上面向下翻转，以使得该内插板晶片的一正面面对该治具；
将该内插板晶片放置于该治具上；以及
使用一固定元件将该内插板晶片固定到该治具上。
4.如权利要求3所述的集成电路结构的制造方法，其中固定该内插板晶片的步骤包括夹住该内插板晶片或使用一胶布粘住该内插板晶片的边缘部分。
5.如权利要求1所述的集成电路结构的制造方法，其中从固定该内插板晶片的该步骤到一切割该内插板晶片的步骤的整个期间，该内插板晶片都固定在该治具上。
6.如权利要求1所述的集成电路结构的制造方法，其中接合该芯片的步骤包括：
将该芯片放置于该内插板晶片上，并使该芯片上的多个焊锡凸块对着该内插板晶片内的所述多个铜柱；以及
将所述多个焊锡凸块回焊。
7.如权利要求1所述的集成电路结构的制造方法，其中该芯片为一半导体晶片的一部份。
8.如权利要求1所述的集成电路结构的制造方法，还包括将具有该内插板晶片在其上的该治具存储在一治具卡匣的一架子中，其中该治具卡匣包括多个相同的架子。
9.一种内插板晶片的处理方法，包括：
提供一设备，包括：
一晶片传输机，用以传送该内插板晶片，其中该晶片传输机包括一第一机械手臂用以转移该内插板晶片，以及一第二机械手臂用以从一工作晶片上卸下该内插板晶片；
一治具，用以放置该内插板晶片，其中该治具包括一平面；以及
一固定元件，用以固定该内插板晶片到该治具上；
将该工作晶片附着至该内插板晶片上；
使该内插板晶片的一背面薄化；
使用该第二机械手臂将该工作晶片从该内插板晶片卸下；
使用该第一机械手臂将该内插板晶片翻转，以使得该内插板晶片的一正面面对该治具，并且将该内插板晶片转移到该治具的该平面上；
使用该固定元件固定该内插板晶片；以及
将一芯片接合到该内插板晶片上。
10.如权利要求9所述的内插板晶片的处理方法，还包括：
在接合该芯片的步骤之后，从该治具将该内插板晶片移开；以及
将该内插板晶片切割为芯片。
11.如权利要求9所述的内插板晶片的处理方法，其中该治具还包括具有该平面的一绝缘板，且其中该平面为软性。
12.一种集成电路结构的制造方法，包括：
提供一内插板晶片；
使用一紫外光胶布将该内插板晶片固定到一工作晶片上；
使该内插板晶片的一背面薄化，暴露出在该内插板晶片内的多个铜柱；
将该内插板晶片的该背面放置在一真空吸盘上；
将该紫外光胶布暴露在紫外光下；
将该工作晶片从该内插板晶片移开；
将该内插板晶片翻转并固定到一治具上；以及
使用该治具运送该内插板晶片。
13.如权利要求12所述的集成电路结构的制造方法，其中该内插板晶片包括多个凸块在一正面上，且其中该凸块固定至该紫外光胶布。
14.如权利要求12所述的集成电路结构的制造方法，其中该内插板晶片的厚度在该薄化步骤之后小于约5密尔。
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