CN101364582A - Loading board construction embedded with chip and preparation thereof - Google Patents
Loading board construction embedded with chip and preparation thereof Download PDFInfo
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- CN101364582A CN101364582A CN 200710140834 CN200710140834A CN101364582A CN 101364582 A CN101364582 A CN 101364582A CN 200710140834 CN200710140834 CN 200710140834 CN 200710140834 A CN200710140834 A CN 200710140834A CN 101364582 A CN101364582 A CN 101364582A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
Abstract
The invention relates to a support plate structure with an embedded chip. The support plate structure comprises an alumina support plate provided with a first surface, a second surface, a plurality of aluminum channels and an opening. The aluminum channels are communicated with the first surface and the second surface of the alumina support plate; the chip is embedded in the opening and provided with an active surface; a plurality of electrode cushions are arranged on the active surface of the chip; the aluminum support plate is also provided with at least a circuit layer-addition structure which is arranged on, the surface of the alumina support plate, the active surface of the chip and the surface of the electrode cushions, wherein, the circuit layer-addition structure is provided with at least one conductive structure corresponding to the electrode cushions, and at least one conductive structure is electrically connected with the electrode cushions. In addition, the invention further provides a method for manufacturing the support plate with the embedded chip.
Description
Technical field
The present invention relates to a kind of carrying plate structure that is embedded with chip and preparation method thereof, refer to that especially a kind of aluminium oxide support plate has the aluminium passage of a plurality of connection support plate upper and lower sides, and be formed with carrying plate structure and the manufacture method thereof that is embedded into chip.
Background technology
Flourish along with electronic industry, electronic product also progresses into multi-functional, high performance R﹠D direction.For satisfying the encapsulation requirement of the high integration of semiconductor package part (Integration) and microminiaturized (Miniaturization), the circuit board that provides a plurality of main passive devices and circuit to connect, also develop into multi-layer sheet by lamina gradually, so that under limited space, cooperate integrated circuit (Integrated circuit) demand of high electron density by available wiring area on interlayer interconnection technique (Interlayer connection) the expansion circuit board.
The processing procedure of general semiconductor device is at first produced the chip support plate that is applicable to this semiconductor device by the chip support plate manufacturer, as substrate or lead frame.Those chip support plates being transferred to the semiconductor packages dealer afterwards puts crystalline substance, pressing mold and plants processing procedures such as ball again.At last, can finish the semiconductor device of the required electric function of client.Therefore relate to different manufacturers during this time, not only complex steps and integration of interface are difficult in actual manufacture process.Moreover when desiring to change the function design as if client, it is complicated especially with concordant bedding that it involves change, also do not meet requirement change elasticity and economic benefit.
The conventional semiconductor packages structure is that semiconductor chip is pasted on substrate top surface in addition, carry out again that routing engages (wire bonding) or with semiconductor chip with chip bonding (Flip chip) mode and substrate electric connection, plant with the tin ball to electrically connect in the back side of substrate again.So, though can reach the purpose of high pin number.But when high frequency more uses or during high speed operation, its usefulness that will produce electrical characteristic because of the lead access path is long can't promote, and limits to some extent.In addition, because of conventional package needs connecting interface repeatedly, relatively increase the complexity of processing procedure.
For this reason, many researchs are adopted in the chip buried base plate for packaging, and this chip that is embedded in base plate for packaging can be directly and the exterior electrical components conducting, in order to shortening electrical conducting path, and can reduce the ability of signal loss, signal distortion and lifting high speed operation.
As shown in Figure 1, the carrying plate structure 100 that is embedded with chip comprises: a support plate 101, one chips 102, a plurality of electronic padses 103, and a circuit layer reinforced structure 106.Wherein this support plate 101 is formed with an opening, and this chip 102 is placed in this opening.This electronic pads 103 is formed at the surface of this chip 102.This circuit layer reinforced structure 106 is formed at this loading plate 101 and this chip 102 surfaces, and has the electronic pads 103 that at least one conductive structure 104 electrically connects this support plate 101 and chip 102.
Yet the carrying plate structure (as shown in Figure 1) that is embedded with chip at present and electronic component (for example surface then element) when integrating, need to make circuit in the carrying plate structure surface again, just can make the electronic component conducting, quite expend the processing procedure time.
And, the support plate 101 that is embedded with the carrying plate structure (as shown in Figure 1) of chip can be material by pottery, because ceramic material possesses good thermal characteristics and mechanical property, can avoid support plate to produce the plate prying, but also have easy, the dimensional stability advantages of higher of granular wiring.Yet the dull and stereotyped manufacture method of large-size ceramic often is a high-temperature sintering process at present, and its processing procedure is quite complicated, and manufacturing cost is very expensive.Therefore, if the ceramic material that forms with existing high-temperature sintering process has the support plate of the loading plate of chip then can significantly improve manufacturing cost as embedding.
Therefore,, how to reduce the manufacturing cost of the carrying plate structure that is embedded with chip, and simplify its manufacture method, real problem for needing to be resolved hurrily along with the development of structure packing technique.
Summary of the invention
In view of above-mentioned existing shortcoming, the objective of the invention is to overcome the deficiencies in the prior art and defective, a kind of carrying plate structure that is embedded with chip is proposed, reduce the manufacturing cost of the carrying plate structure that is embedded with chip, and simplify its manufacture method.
For reaching above-mentioned purpose, the invention provides a kind of carrying plate structure that is embedded with chip, comprise: one have a first surface, a second surface, a plurality of aluminium passage, with the aluminium oxide support plate of an opening, wherein, described aluminium channel connection is in the first surface and the second surface of this aluminium oxide support plate, and the two ends that this aluminium passage is exposed to this first surface and second surface respectively are formed with electric connection pad; One chip, this chip embedding bury and have an active surface in this opening, a plurality of electronic padses are disposed at the active surface of this chip; And at least one circuit layer reinforced structure, this circuit layer reinforced structure be disposed at this aluminium oxide support plate surface, this chip active surface, with the surface of this electronic pads, wherein, this circuit layer reinforced structure has a conductive structure corresponding to this electronic pads at least, and at least one this conductive structure is electrically connected at this electronic pads.
In other words, the present invention is embedded with in the carrying plate structure of chip, and the aluminium oxide support plate is an insulator, and the aluminium passage in the aluminium oxide support plate then can be used as the first surface that is communicated in this aluminium oxide support plate and the conductive channel of second surface.Thus, when carrying plate structure of the present invention combines with electronic component, electronic component does not need additionally to make circuit makes its conducting, can be electrically connected to another surperficial lead of aluminium oxide support plate or circuit layer reinforced structure by the aluminium passage, and make the electronic component conducting.
In the carrying plate structure that is embedded with chip of the present invention, the aluminium width of channel of aluminium oxide support plate does not have special restriction, electrical demand or support plate thickness on carrying plate structure are decided, and the control method of this aluminium width of channel also do not have special restriction, can reach by different method for oxidation or condition.
The carrying plate structure that is embedded with chip of the present invention, wherein, the material of this aluminium oxide support plate can be aluminium oxide or aluminium oxide alloy, is preferably aluminium oxide alloy.
The carrying plate structure that is embedded with chip of the present invention, wherein, the formation method of this aluminium oxide support plate can be any method for oxidation, is preferably to utilize anode oxidation method to form this aluminium oxide support plate.
The carrying plate structure that is embedded with chip of the present invention wherein, also includes at least one electronic component arrangements is not formed with the circuit layer reinforced structure in this aluminium oxide support plate the electric connection pad on surface, and this electronic component and this aluminium passage electrically connect.
The carrying plate structure that is embedded with chip of the present invention, wherein, the material of this electronic pads is not limit and is used any metal, preferably is an aluminum metal or copper metal.
The carrying plate structure that is embedded with chip of the present invention, wherein, also can include an immobilization material between this aluminium oxide support plate and this chip, to fix this chip in this opening of this aluminium oxide support plate, this immobilization material does not limit, and preferably is epoxy resin or dielectric layer material.
The carrying plate structure that is embedded with chip of the present invention, wherein, this circuit layer reinforced structure includes dielectric layer, is stacked and placed on line layer and at least one this conductive structure on this dielectric layer, and at least one this conductive structure passes this dielectric layer is electrically connected to this dielectric layer below for this line layer line layer or electronic pads.
And, the dielectric layer material of this circuit layer reinforced structure does not limit, preferably be selected from least by ABF (Ajinomoto Build-up Film), two along butyryl diacid acid imide/triazine (BT, Bismaleimide triazine), phenylbenzene cyclobutadiene (benzocylobutene; BCB), liquid crystal polymer (Liquid Crystal Polymer), polyimides (Polyimide; PI), any group that forms in the materials such as polyvinylether (Poly (phenylene ether)), polytetrafluoroethylene (Poly (tetra-fluoroethylene)), aramid fiber (Aramide), epoxy resin and glass fibre.The material of this line layer and this conductive structure does not limit, and preferably is copper, tin, nickel, chromium, titanium, copper/evanohm or tin/lead alloy.
The carrying plate structure that is embedded with chip of the present invention; also be included in this circuit layer reinforced structure surface and be formed with welding resisting layer as insulating protective layer; welding resisting layer is formed with opening appearing the electric connection pad on circuit layer reinforced structure surface, and a plurality of solder projection is arranged in this welding resisting layer opening and with the circuit layer reinforced structure and is electrically conducted.
Also comprise a crystal seed layer between this line layer and this dielectric layer or between this conductive structure and this solder projection again, this crystal seed layer is mainly as the required current conduction path of electroplating process, the group that any material is formed in optional free copper, tin, nickel, chromium, titanium, copper/evanohm and the tin/lead alloy, can also conducting polymer as crystal seed layer, the group that any material is formed in the optional free polyacetylene of this conducting polymer, polyaniline and the organic sulfur polymer.
In addition, for reaching above-mentioned purpose, the present invention also provides a kind of manufacture method that is embedded with the loading plate of chip, and its step comprises: an aluminium support plate (A) is provided; (B) form one first patterning resistance layer in this aluminium support plate surface; (C) this aluminium support plate of oxidation, make this aluminium support plate form one have a first surface, a second surface, with the aluminium oxide support plate of a plurality of aluminium passages, and described aluminium channel connection is in the first surface and the second surface of this aluminium oxide support plate; (D) remove this first patterning resistance layer, the two ends that are exposed to this first surface and second surface in this aluminium passage form electric connection pad respectively; (E) form an opening in this aluminium oxide support plate; (F) chip is embedded and be fixed in this opening of this aluminium oxide support plate, wherein, the active surface of this chip has a plurality of electronic padses; And (G) in the active surface of this aluminium oxide support plate, this chip, form at least one circuit layer reinforced structure with the surface of this electronic pads, wherein, this circuit layer reinforced structure has a conductive structure corresponding to this electronic pads at least, and at least one this conductive structure is electrically connected at this electronic pads.
By the method, the loading plate that is embedded with chip can once finish include simultaneously aluminium oxide support plate (insulator), with the aluminium passage (conductor) that is arranged in the aluminium oxide support plate.This aluminium passage can be used as the loading plate that is embedded with chip and electronic component when integrating, and the conductive channel of electronic component does not make the electronic component conducting and do not need other extra step to make circuit.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein, the material of this aluminium support plate can be aluminum or aluminum alloy, is preferably aluminium alloy.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein, the method for oxidation of this aluminium support plate does not limit, and preferably is anode oxidation method.
The manufacture method that is embedded with the loading plate of chip of the present invention wherein, comprises that also a step (H) is to form an electronic component in the second surface of this aluminium support plate, and this electronic component and the electric connection of this metal level.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein the aluminium width of channel of this aluminium oxide support plate does not have special restriction, electrical demand on carrying plate structure is decided, and the control method of this aluminium width of channel also do not have special restriction, can reach by different method for oxidation or condition.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein, the material of this electronic pads is not limit and is used any metal, preferably is an aluminum metal or copper metal.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein, embed the opening of aluminium oxide support plate in chip after, can be filled with an immobilization material between this aluminium oxide support plate and this chip, to fix this chip in this opening of this aluminium oxide support plate, be preferably filling epoxy resin or dielectric layer material.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein, in the step of making this circuit layer reinforced structure be: in the active surface of this aluminium oxide support plate, this chip, form a dielectric layer with the surface of this electronic pads, and make this dielectric layer form a plurality of dielectric layer openings, wherein at least one dielectric layer opening is corresponding to this electronic pads position of this chip; On dielectric layer and dielectric layer opening, form crystal seed layer; Form resistance layer again on the surface of this crystal seed layer, this resistance layer forms a plurality of resistance layer openings with exposure, visualization way, and at least one resistance layer opening corresponds to the position of the electronic pads of this chip; Electroplate one deck electroplated metal layer, the crystal seed layer that removes this resistance layer again and covered in these a plurality of resistance layer openings; Wherein this electroplated metal layer includes a line layer and a conductive structure at least.
, in the step of making this circuit layer reinforced structure, before forming the patterning resistance layer, form a crystal seed layer earlier, and after the step that removes the patterning resistance layer, continue to remove the crystal seed layer that is not covered with electroplated metal layer again according to the present invention.This crystal seed layer is selected from the group that is made up of any material in copper, tin, nickel, chromium, titanium, copper/evanohm and the tin/lead alloy, preferably for using copper product, then form, preferably form for sputter or electroless-plating mode with one of physical deposition and chemical deposition.If this crystal seed layer with conducting polymer as crystal seed layer, then form with rotary coating (spincoating), ink jet printing (ink-jet printing), wire mark (screen printing) or impression modes such as (imprinting), wherein this conducting polymer is selected from the group that is made up of any material in polyacetylene, polyaniline and the organic sulfur polymer.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein, in the step of making this circuit layer reinforced structure, the material of this dielectric layer does not limit, be preferably and be selected from least by ABF (Ajinomoto Build-up Film), two along butyryl diacid acid imide/triazine (BT, Bismaleimide triazine), phenylbenzene cyclobutadiene (benzocylobutene; BCB), liquid crystal polymer (Liquid Crystal Polymer), polyimides (Polyimide; PI), any group that forms in the materials such as polyvinylether (Poly (phenylene ether)), polytetrafluoroethylene (Poly (tetra-fluoroethylene)), aramid fiber (Aramide), epoxy resin and glass fibre.
The manufacture method that is embedded with the loading plate of chip of the present invention, wherein, in the step of making this circuit layer reinforced structure, the material of this electroplated metal layer there is no particular restriction, preferably be copper, tin, nickel, chromium, palladium, titanium, tin/lead or its alloy, more preferably, be copper.
Therefore, carrying plate structure and the manufacture method thereof that is embedded with chip of the present invention, use method for oxidation to make aluminium support plate (conductor) be oxidized to insulator, for example use anode oxidation method, and by fitting in the aluminium support plate surface, the first patterning resistance layer cover part on aluminium support plate surface, make the aluminium support plate when oxidation, still can the not oxidized aluminum metal (conductor) of reserve part, go up the conductive channel of second surface as connecting insulation support plate (aluminium oxide).Therefore, the loading plate that is embedded with chip of the present invention can form insulating ceramics support plate (aluminium oxide support plate) and conductive channel (aluminium passage) simultaneously, do not need additional step to make circuit and make the electronic component conducting, and technology is simple.Add, the low price of aluminium, handling ease quite is beneficial to a large amount of productions, and therefore, forming aluminium oxide support plate (ceramic support plate) with oxidizing process does not need expensive manufacturing cost, helps the application on the industry.
Description of drawings
Fig. 1 is the existing generalized section that is embedded with the carrying plate structure of chip;
Fig. 2 a to 2g is the generalized section of manufacture method of the loading plate that is embedded with chip of a preferred embodiment of the present invention;
Fig. 3 a to 3c is the generalized section of manufacture method of the circuit layer reinforced structure of a preferred embodiment of the present invention;
Fig. 4 is the generalized section of the manufacture method of another preferred embodiment of the present invention.
Symbol description among the figure
10 aluminium support plates, 11 first patterning resistance layers, 12 aluminium oxide
13 aluminium, 14 aluminium oxide support plates, 15 aluminium passages
16 openings, 21 chips, 22 active surfaces
23 electronic padses, 24 non-active surface 25 epoxy resin
26 dielectric layer material, 31 circuit layer reinforced structures, 32 dielectric layers
33 dielectric layer openings, 34 patterning resistance layers, 35 resistance layer openings
36 electroplated metal layers, 37 line layers, 38 conductive structures
41 solder projections, 42 electronic components, 100 carrying plate structures
101 support plates, 102 chips, 103 electronic padses
104 conductive structures, 106 circuit layer reinforced structures, 17 electric connection pads
Embodiment
Embodiment one
See also Fig. 2 a to 2g, be the generalized section of the carrying plate structure method for making that is embedded with chip of present embodiment.
Shown in Fig. 2 a, at first provide an aluminium support plate 10.Then, shown in Fig. 2 b, form one first patterning resistance layer 11 in the surface of aluminium support plate 10, this first patterning resistance layer 11 need fit in the surface of aluminium support plate 10.
This aluminium support plate 10 is placed an electrolysis tank, carry out oxidation reaction, make aluminium support plate 10 do not covered part and be oxidized to aluminium oxide 12 gradually with insulating property (properties) by the first patterning resistance layer 11, still keep the aluminium 13 with conduction property and covered part by the first patterning resistance layer 11, its structure is shown in Fig. 2 c.And the aluminum metal part of this aluminium oxide support plate 14 must be communicated with the first surface and the second surface of this aluminium oxide support plate 14, just forms the aluminium passage 15 of tool conduction property in aluminium oxide support plate 14.In the present embodiment, it is the electrolysis tank of oxalic acid solution or sulfuric acid solution that the aluminium support plate 10 that is fitted with the first patterning resistance layer 11 places an electrolyte, carry out anodic oxidation reactions, and, come the width of aluminium passage 15 in the controlled oxidation aluminium support plate 14 by adjusting the width or the shape of anodizing time, the first patterning resistance layer 11.In addition, also can pass through some compensating movements, make the aluminium passage 15 in the aluminium oxide support plate 14 reach optimization.
This shows that present embodiment can once be finished and include aluminium oxide support plate (insulator) simultaneously, with the aluminium passage (conductor) that is arranged in the aluminium oxide support plate.In other words, present embodiment can once be finished the insulator support plate, be connected the insulator support plate on, conductive channel between second surface, do not need other extra step to make the circuit of conducting electronic component.
Thereupon, shown in Fig. 2 d, remove the first patterning resistance layer 11 on the aluminium oxide support plate 14, come out in the two ends of aluminium passage 15.Then, shown in Fig. 2 e, respectively form an electric connection pad 17, as the aluminium passage 15 outside positions that electrically connect in the two ends that aluminium passage 15 comes out.The formation method of this electric connection pad 17, on aluminium oxide support plate 14, second surface respectively forms a patterning resistance layer (not shown), electroplate or deposit a bronze medal layer after the part that is not covered, remove above-mentioned patterning resistance layer, promptly form electric connection pad 17 by above-mentioned patterning resistance layer.Because forming the method for electric connection pad 17 has been prior art, so present embodiment is not again with icon representation.After finishing above-mentioned steps, form an opening 16, again a chip 21 of having finished wafer integrated circuit manufacture process and excision forming is embedded in the opening of aluminium oxide support plate 14 with milling cutter (router) cutting aluminium oxide support plate 14.This chip 21 has a plurality of electronic padses 23 on its active surface 22, the material of this electronic pads 23 is a copper.Then, epoxy resin 25 is inserted space between aluminium oxide support plate 14 and the chip 21, make chip 21 be fixed in the opening 16 of aluminium oxide support plate 14 its structure such as Fig. 2 f.In the present embodiment, the non-active surface 24 of chip 21 is exposed, helps chip 21 heat radiations.
After finishing above-mentioned steps, in the active surface 22 of aluminium oxide support plate 14 surfaces, chip 21, form at least one circuit layer reinforced structure 31 with electronic pads 23 surfaces, its structure is shown in Fig. 2 g.The formation method of this circuit layer reinforced structure 31 is shown in Fig. 3 a to 3c.At first, in the active surface 22 of aluminium oxide support plate 14 surfaces, chip 21, form dielectric layers 32 with electronic pads 23 surfaces, the material of this dielectric layer 32 is at least one and is selected from by ABF (Ajinomoto Build-up Film), two along butyryl diacid acid imide/triazine (BT, Bismaleimide triazine), phenylbenzene cyclobutadiene (benzocylobutene; BCB), liquid crystal polymer (Liquid Crystal Polymer), polyimides (Polyimide; PI), any group that forms in the materials such as polyvinylether (Poly (phenylene ether)), polytetrafluoroethylene (Poly (tetra-fluoroethylene)), aramid fiber (Aramide), epoxy resin and glass fibre, and with laser drill or exposure, be developed in this dielectric layer 32 and form a plurality of dielectric layer openings 33, wherein at least one dielectric layer opening is corresponding to electronic pads 23 positions of chip 21, and its structure is shown in Fig. 3 a.But when utilizing the technology of laser drill, also need carry out de-smear (De-smear) operation to remove because of glue slag in this dielectric layer opening that boring is residued in.Then, on dielectric layer 32 and dielectric layer opening 33, form a crystal seed layer 40, on the surface of this crystal seed layer 40, form resistance layer 34 again, this resistance layer 34 forms a plurality of resistance layer openings 35 with exposure, visualization way, and at least one resistance layer opening 35 corresponds to the position of the electronic pads 23 of this chip 21, and its structure is shown in Fig. 3 b.At last, shown in Fig. 3 c, electroplate one deck electroplated metal layer 36, the crystal seed layer 40 that removes this resistance layer 34 again and covered in these a plurality of resistance layer openings 35.Circuit layer reinforced structure 31 shown in Fig. 2 g is to use and increases layer technology according to the stacked structure that gets on to make multilayer of the needed number of plies.This electroplated metal layer 36 conductive structure 38 of including line layer 37 and being connected wherein with the electronic pads 23 of chip 21.
At last; shown in 2g; be formed with welding resisting layer 50 as insulating protective layer in the surface of this layer reinforced structure 31; welding resisting layer 50 is formed with opening 51 to appear the electric connection pad 31a on circuit layer reinforced structure 31 surfaces; and a plurality of solder projections 41 are arranged in this welding resisting layer opening 51 and with circuit layer reinforced structure 31 and are electrically conducted; and configuration electronic component 42 is in electric connection pad 17 surfaces of this aluminium oxide support plate 14; electronic component 42 and aluminium passage 15 are electrically connected, and finish the loading plate that is embedded with chip of present embodiment.
Therefore, the aluminium oxide support plate 14 of present embodiment can directly be used as aluminium passage 15 circuit of conducting aluminium oxide support plate 14 upper and lower sides when integrating electronic component 42, make electronic component 42 conductings.
Embodiment two
The manufacture method and the embodiment one of the loading plate that is embedded with chip of present embodiment are closely similar, and except the fixing means of chip and aluminium support plate and embodiment 1 were different, all the other steps were roughly identical with embodiment 1.
As shown in Figure 4, after chip 21 is embedded in the opening of aluminium oxide support plate 14, in aluminium oxide support plate 14 surface coated one dielectric layer materials 26, and dielectric material is filled between chip 21 and the aluminium oxide support plate 14 by pressing, with fixed chip 21 in the opening of aluminium oxide support plate 14.Wherein, the dielectric layer material 26 that is positioned at aluminium oxide support plate 14 second surfaces can be considered one of dielectric layer of layer reinforced structure, and proceeds the formation step of layer reinforced structure.At last, on layer reinforced structure, form a plurality of solder projections again, and integrate electronic component and finish the loading plate that is embedded with chip of present embodiment.
Same, the aluminium oxide support plate 14 of present embodiment is when integrating electronic component, and aluminium passage 15 can be used as the circuit of conducting aluminium oxide support plate 14 upper and lower sides, makes the electronic component conducting.
The foregoing description is only given an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claims are described certainly, but not only limits to the foregoing description.
Claims (14)
1. a carrying plate structure that is embedded with chip is characterized in that, comprising:
One has the aluminium oxide support plate of a first surface, a second surface, a plurality of aluminium passage and an opening, wherein, the first surface and the second surface of described this support plate of aluminium channel connection, and the two ends that this aluminium passage is exposed to this first surface and second surface respectively are formed with electric connection pad;
One chip, this chip embedding bury and have an active surface in this opening, a plurality of electronic padses are disposed at the active surface of this chip; And
At least one circuit layer reinforced structure, this circuit layer reinforced structure is disposed at this aluminium oxide support plate surface, the active surface of this chip and the surface of this electronic pads, wherein, this circuit layer reinforced structure has a conductive structure corresponding to this electronic pads at least, and at least one this conductive structure is electrically connected at this electronic pads.
2. the carrying plate structure that is embedded with chip as claimed in claim 1, wherein, this aluminium oxide support plate utilizes anode oxidation method to form.
3. the carrying plate structure that is embedded with chip as claimed in claim 1 wherein, is filled with an epoxy resin between this aluminium oxide support plate and this chip, to fix this chip in this opening of this aluminium oxide support plate.
4. the carrying plate structure that is embedded with chip as claimed in claim 1 wherein, is filled with a dielectric layer material between this aluminium oxide support plate and this chip, to fix this chip in this opening of this aluminium oxide support plate.
5. the carrying plate structure that is embedded with chip as claimed in claim 1, wherein, this circuit layer reinforced structure includes a dielectric layer, and is stacked and placed on line layer and at least one conductive structure on this dielectric layer, and this conductive structure passes this dielectric layer is electrically connected to this dielectric layer below for this line layer line layer or electronic pads.
6. the carrying plate structure that is embedded with chip as claimed in claim 1, wherein, the surface of this circuit layer reinforced structure is formed with welding resisting layer, and welding resisting layer is formed with opening for solder projection being set and being electrically conducted with the circuit layer reinforced structure.
7. the carrying plate structure that is embedded with chip as claimed in claim 1, wherein, also include at least one electronic component arrangements is not formed with the circuit layer reinforced structure in this aluminium oxide support plate the electric connection pad on surface, and this electronic component and this aluminium passage electrically connect.
8. a manufacture method that is embedded with the loading plate of chip is characterized in that, comprises step:
(A) provide an aluminium support plate;
(B) form one first patterning resistance layer in this aluminium support plate surface;
(C) this aluminium support plate of oxidation, make this aluminium support plate form one have a first surface, a second surface, with the aluminium oxide support plate of a plurality of aluminium passages, and the first surface and the second surface of described this aluminium oxide support plate of aluminium channel connection;
(D) remove this first patterning resistance layer, the two ends that are exposed to this first surface and second surface in this aluminium passage form electric connection pad respectively;
(E) form an opening in this aluminium oxide support plate;
(F) chip is embedded and be fixed in this opening of this aluminium oxide support plate, wherein, the active surface of this chip has a plurality of electronic padses; And
(G) in the active surface of this aluminium oxide support plate, this chip, form at least one circuit layer reinforced structure with the surface of this electronic pads, wherein, this circuit layer reinforced structure has a conductive structure corresponding to this electronic pads at least, and at least one this conductive structure is electrically connected at this electronic pads.
9. the manufacture method that is embedded with the loading plate of chip as claimed in claim 8, wherein, in step (C), this aluminium oxide support plate utilizes anode oxidation method to form.
10. the manufacture method that is embedded with the loading plate of chip as claimed in claim 8 wherein, in step (F), is filled with an epoxy resin layer between this aluminium oxide support plate and this chip, to fix this chip in this opening of this aluminium oxide support plate.
11. the manufacture method that is embedded with the loading plate of chip as claimed in claim 8 wherein, in step (F), is filled with a dielectric layer material between this aluminium oxide support plate and this chip, to fix this chip in this opening of this aluminium oxide support plate.
12. the manufacture method that is embedded with the loading plate of chip as claimed in claim 8 wherein, in this step (G), forms this at least one circuit layer reinforced structure and comprises the following steps:
Form a dielectric layer in the active surface of this aluminium oxide support plate, this chip and the surface of this electronic pads, and make this dielectric layer form a plurality of dielectric layer openings, wherein at least one dielectric layer opening is corresponding to this electronic pads position of this chip;
Form a crystal seed layer in this dielectric layer and this dielectric layer opening, this crystal seed layer surface forms resistance layer and forms a plurality of resistance layer openings, and wherein, at least one resistance layer opening corresponds to the position of this electronic pads of this chip;
Electroplate one deck electroplated metal layer in these a plurality of resistance layer openings; And
Remove the crystal seed layer that this resistance layer and resistance layer covers, wherein this electroplated metal layer includes a line layer and a conductive structure at least.
13. the manufacture method that is embedded with the loading plate of chip as claimed in claim 12, wherein, this electroplated metal layer is copper, tin, nickel, chromium, palladium, titanium, tin/lead or its alloy.
14. the manufacture method that is embedded with the loading plate of chip as claimed in claim 12, wherein, comprise that also a step (H) is to form an electronic component on the electric connection pad on the surface that is not formed with the circuit layer reinforced structure of this aluminium support plate, and this electronic component and the electric connection of this aluminium passage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710140834 CN101364582A (en) | 2007-08-10 | 2007-08-10 | Loading board construction embedded with chip and preparation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710140834 CN101364582A (en) | 2007-08-10 | 2007-08-10 | Loading board construction embedded with chip and preparation thereof |
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| CN101364582A true CN101364582A (en) | 2009-02-11 |
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| CN 200710140834 Pending CN101364582A (en) | 2007-08-10 | 2007-08-10 | Loading board construction embedded with chip and preparation thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376674A (en) * | 2010-08-04 | 2012-03-14 | 欣兴电子股份有限公司 | Packaging structure with embedded semi-conductor element |
| CN102044500B (en) * | 2009-10-16 | 2013-08-07 | 相互股份有限公司 | Chip carrier plate as well as encapsulating structure and method thereof |
| CN103579168A (en) * | 2012-07-19 | 2014-02-12 | 矽品精密工业股份有限公司 | Substrate structure and packaging piece with same |
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2007
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044500B (en) * | 2009-10-16 | 2013-08-07 | 相互股份有限公司 | Chip carrier plate as well as encapsulating structure and method thereof |
| CN102376674A (en) * | 2010-08-04 | 2012-03-14 | 欣兴电子股份有限公司 | Packaging structure with embedded semi-conductor element |
| CN102376674B (en) * | 2010-08-04 | 2013-06-26 | 欣兴电子股份有限公司 | Packaging structure with embedded semi-conductor element |
| CN103579168A (en) * | 2012-07-19 | 2014-02-12 | 矽品精密工业股份有限公司 | Substrate structure and packaging piece with same |
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Open date: 20090211 |