CN101334679A - 用于动力电子装置的温度感应装置 - Google Patents
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Abstract
本发明涉及用于动力电子装置的温度感应装置,提供一种用于对动力电子装置中的温度进行控制的冷却系统。动力电子装置包括具有主要表面的半导体。所述冷却系统包括与半导体的主要表面相连的温度传感器、以及与温度传感器相连的控制电路。控制电路被构造成在温度超过预定温度时减小流向反相电路的电流。
Description
技术领域
本发明涉及用于动力电子装置的温度感应装置。更具体地,本发明涉及用于控制动力电子装置温度的冷却系统,所述动力电子装置被用于向电动机例如用于驱动车辆的AC电动机提供动力。
背景技术
绝缘栅双极晶体管(IGBT)是尤其适用于动力应用的半导体装置。IGBT以很小的小片尺寸并以相对较低的“接通”电阻处理高电压和高电流。另外,IGBT可以快速开关,由此使IGBT有效地作为用于高动力、交流电机应用的三相转化器中的开关,所述电机应用例如是被用于驱动电子、混合动力和燃料电池车辆的电机。
当提供交流电以向混合动力和燃料电池车辆供给动力时,IGBT布置在模块中,每个模块具有多个IGBT,例如六个IGBT。每个IGBT在操作时产生热量,并且应该注意确保IGBT的温度不会变得过高。
因而,需要提供一种用于控制动力电子装置中的温度的冷却系统。另外,需要提供一种用于在向机动车的AC电机提供交流电的至少一个动力电子装置中监控温度的系统.还需要提供一种防止发生过高温度的基底组件。而且,从随后结合附图以及上述技术领域和背景技术的详细描述和附加权利要求中将会清楚地了解到本发明的其它所需特征和特性。
发明内容
提供一种用于对动力电子装置中的温度进行控制的冷却系统。动力电子装置包括具有主要表面的半导体。所述冷却系统包括与半导体的主要表面相连的温度传感器、以及与温度传感器相连的控制电路。控制电路被构造成在温度超过预定温度时减小流向反相电路的电流。
提供一种用于监控至少一个动力电子装置中的温度的系统,所述动力电子装置向机动车的AC电动机提供交流电。所述至少一个动力电子装置包括具有主要表面的半导体,所述主要表面的至少一部分露出。所述系统包括与半导体的主要表面的露出部分相连的至少一个基底。热敏电阻通电安装在至少一个基底上并与其电连接。动力控制电路与热敏电阻电连接,用于向半导体提供DC电流。动力控制电路在半导体温度超过预定温度时减小流向半导体的电流。
一种基底子组件包括具有第一和第二相对的金属化主要表面的陶瓷晶片;在第一金属化主要表面上远离陶瓷晶片延伸以与第一终端元件电连接的第一金属接头;可导电地粘结在陶瓷晶片的第一金属化表面上的半导体开关装置;以及靠近半导体开关装置粘结在第一金属化表面的一部分上的第一陶瓷层。该第一陶瓷层具有金属化第一表面。基底子组件还包括在第一陶瓷层的金属化上表面上远离陶瓷晶片延伸以与第二终端元件电连接的第二金属接头;以及导电粘结在开关装置上表面的电极上并且还粘结在第一陶瓷层的金属化上表面上的第一金属层。基底子组件还包括粘结在第一金属层上并置在半导体开关装置上的第二陶瓷层,以及粘结在第二陶瓷层上的第二金属层。温度传感器与第二陶瓷层相连。该温度传感器被构造成测量半导体开关装置的温度。
附图说明
下文结合以下附图对本发明进行描述,其中同一附图标记表示相同元件,并且
图1是根据本发明一种实施方式的机动车的示意图;
图2是根据本发明另一实施方式的机动车的示意图;
图3是在开关模块上图1和2所示的反相电路和温度传感器中采用的示例性对偶模块的顶视平面图;
图4是图3所示模块的局部立体图;
图5是半导体基底子组件的第一实施方式的立体图,该基底子组件具有可以在图3和4所示的开关模块中采用的安装在其上的温度传感器;
图6是图5所示的基底子组件的分解立体图;
图7是图5所示的传感器的端视图;
图8是图7所示的传感器沿平面VIII-VIII截取的侧视图;
图9是在图3和4所示类型的开关模块中采用的IGBT半导体基底子组件的第二实施方式的立体图;以及
图10是图9所示部分的顶视图。
具体实施方式
以下详细描述实质上仅仅是示例性的,并不是要限制本发明或本发明的应用和用途。此外,决不是要通过在以上技术领域、背景技术、发明内容或以下详细描述中提出的任何明确或暗含的理论限制本发明。
图1是具有IC发动机-电机混合动力驱动装置100的示例性车辆102。混合动力驱动装置100包括内燃机104和三相交流(AC)电动机106以驱动车辆102的车轮110。变速器108布置在内燃机104与AC电动机106之间,用于将内燃机104和AC电动机106的机械输出传递到车轮110。发电机114与动力电子装置例如反相电路118相连并向其提供直流电。反相电路118接收来自发电机114的直流电并向AC电动机106提供交流电。发电机114还与电池116、电池组或电容器组相连并对其进行充电。发电机114还与内燃机104或AC电动机106相连以接收动力。车辆控制器128布置在发电机114与反相电路118之间,用于控制流向反相电路118的电流。
功率分配装置112布置于内燃机104和AC电动机106与变速器108之间,以及在AC电动机106与变速器108和发电机114之间。动力分配装置112确定内燃机104或AC电动机106是否驱动变速器108,和/或内燃机104或变速器108是否驱动发电机114。
速度控制器130包括与车辆控制器128相连的脚踏板132。速度控制器130向车辆控制器128提供信号以对从发电机114流向反相电路118的电流进行控制。
反相电路118与一个或多个温度传感器120相连,用于监控反相电路118的温度。温度传感器120与动力限制控制电路122相连。当温度传感器120检测到反相电路118中的温度高于预定温度时,动力限制控制电路122会限制反相电路118的动力以防止超出预定操作温度或将温度降低到预定温度以下。在备选实施方式中,设置开关以控制发电机114与反相电路118之间的电流。
反相电路118还与用于冷却反相电路118的散热装置134相连。散热装置134可以与散热器136相连,使得循环流体携带热量离开散热装置134。散热装置134还可以由流动在散热装置134上的空气冷却。车辆102仅仅是IC发动机-电机混合动力驱动装置100的一个示意性装置。本领域技术人员将会认识到可以设置具有备选部件以及其它或更少部件的备选的IC发动机-电机混合动力驱动的车辆。
图2是与图1类似的车辆103的示意图,不同之处在于车辆103包括利用燃料电池138向三相AC电动机106提供动力的燃料电池驱动系统101。与图1所示的车辆102相同,变速器108与AC电动机106相连,用于向车轮110传递AC电动机106的机械输出。反相电路118向AC电动机106提供交流电。反相电路118与向反相电路118提供直流电的燃料电池138相连。车轮控制器128布置在燃料电池138与反相电路118之间,用于控制流向反相电路118的电流。
与图1相同,图2所示的速度控制器130包括与车辆控制器128相连的脚踏板132。速度控制器130向车辆控制器128提供信号以对从发电机114流向反相电路118的电流进行控制。
图2所示的反相电路118与一个或多个温度传感器120相连,用于监控反相电路118的温度。温度传感器120与动力限制控制电路122相连。当温度传感器120检测到反相电路118中的温度高于预定温度时,动力限制控制电路122会限制反相电路118的动力,以防止超出预定操作温度或将温度降低到预定温度以下。在备选实施方式中,可以设置开关以控制从燃料电池138流向反相电路118的电流。
车辆103仅仅是燃料电池驱动系统101的一个示例性装置。本领域技术人员将会认识到可以设置具有备选部件以及其它或更少部件的备选燃料电池驱动系统。
图3是在图1和2所示的车辆上采用的示例性对偶模块反相电路118的顶视平面图。反相电路118被构造程具有六个基底子组件202a-202f的开关模块200。可以采用其它类型的反相模块代替所示模块200。
模块200具有终端子组件204,其包括用于形成第一基底子组件组的基底子组件202a,202b,202c的发射极终端206、用于形成第二基底子组件组的基底子组件202d,202e,202f的集电极终端208、以及用于两个基底子组件组202a-c,202d-f的共用集电极/发射极终端210。终端子组件204在一侧具有第一排共面触点212,214,并在另一侧具有第二排共面触点216,218。成排的触点212,214;216,218相互平行,如同基底子组件的两个组202a-c,202d-f。触点212与发射极终端206处于低电阻连通,同时触点216与集电极终端208处于低电阻连通。触点214,218还与集电极/发射极终端210处于低电阻连通。基底子组件202a-202c的基底子组件接头220被焊接在终端子组件触点区域214上;基底子组件202a-202c的基底子组件接头222被焊接在终端子组件触点212上;基底子组件202d-202f的基底子组件接头220被焊接在终端子组件触点区域216上;以及基底子组件202d-202f的基底子组件接头222被焊接在终端子组件触点218上。
模块200具有壳体224,其包括热膨胀系数与基底子组件202a-202f上的基底接近的导热基板。为了更清楚地示出模块200的内部构造未示出壳体224的盖。壳体224具有两个嵌入的引线框架228,230,框架的一部分在模块200内露出,用于进行电连接。壳体224还具有两个小的连接区域232,234,它们各自包括Kelvin终端和门电压终端。由附图标记236表示用于基底子组件202a-202c的门电压终端。由附图标记238表示用于基底子组件202d-202f的门电压终端。丝状导线240使门电压终端236与嵌入的引线框架228相连,同时丝状导线242使门电压终端238与嵌入的引线框架230相连。丝状导线244使相应的嵌入的引线框架228,230与基底子组件202a-202f中的每个相连,以使其与相应门电压终端236,238相连。
图4表示图3所示模块200的局部立体图。基底子组件202a-202f被示出安装在基板226上。三个基底子组件202a-202c在终端子组件204的一侧被焊接在基板226的上表面上,同时三个基底子组件202d-202f在终端子组件204的另一侧被焊接在基板226的上表面上。每组三基底子组件202a-c,202d-f沿终端子组件204中心线的平行线布置。同时,基底子组件202a-f优选相同并对称布置在基板226上以实现冷却的均匀,并由此在操作过程实现温度的均匀。
图5更详细地表示在图1和2中示出的IGBT基底子组件202a-202f(总体称为202)中的一个和温度传感器120,从而提供本发明的一种实施方式。图6以分解视图表示基底子组件202,为了表示清楚未示出温度传感器120。图7是温度传感器120更接近的视图,图8是沿平面VIII-VIII截取的图7所示温度传感器120的横截面图。
在基底子组件202中,大约0.5-1mm厚和大约25mm长×大约19mm宽的晶片300具有粘结在其相对两侧上的金属箔层。在此采用的术语粘结、焊接和连接是在最广义下使用,并且在多种实施方式中可以被用作可互换的过程。还可以设置更大和更小的晶片。晶片300由绝缘层例如氧化铍、氧化铝、氮化铝、氮化硅或氮化硼制成,同时箔层302,304是厚度大约为0.25mm的铜或铝。优选地,箔层302,304直接粘结在晶片300上。子组件接头220是箔层302的一体部分。
硅半导体开关晶体管306例如IGBT或MOSFET被粘结或连接在箔层302的第一部分上,并且快速硅半导体二极管(SFD)308被粘结在箔层302的第二部分上。SFD308提供穿过开关晶体管306的发射极和集电极终端206,208的阻塞二极管并优选由与开关晶体管306基本上类似的材料制成。在每个基底子组件202a-202f(图3和4)中,SFD308与开关晶体管306配对并与其邻近的热隔绝。根据电路设计,每个晶体管306可以有更多或更少的SFD 308。二极管触点区域315和陶瓷晶片313构成了SFD 308的一部分。陶瓷晶片313可以在每一侧具有膨胀系数与陶瓷晶片313类似的金属层。
第二、但更小的陶瓷晶片310粘结在箔层302上。第三铜箔元件311粘结在陶瓷晶片310上并具有从其上延伸的第二接头222。第二接头222通过陶瓷晶片310与第一接头220绝缘。
金属带312作为与开关晶体管306的触点区域连接的导体。具有窗口316的陶瓷层314粘结在金属带312上。具有穿过窗口316突出的触点接头320的D形盘318粘结在陶瓷晶片314上并与安装在具有接触垫324的电介质晶片322上的可微调电阻器相连。金属带312和D形盘318可以是铜,与陶瓷层314一起形成互连系统,该系统与常规互连元件和层相比与半导体408的热膨胀系数更加匹配。在其它实施方式中,D形盘318可以由与陶瓷层314尺寸大致相同的金属层代替。
在图5结合图7和8中看到,温度传感器120包括被焊接在一对箔基底328,330上的热敏电阻326,箔基底328,330又连接在陶瓷层314上。术语基底和垫可以互换使用。箔基底328,330是金属互连元件,各自具有箔铜或铝沉积的导电表面334,以及箔铜或铝沉积的导电表面336。在备选实施方式中,热敏电阻326由热电偶代替。
热敏电阻326在焊接在箔基底328的导电表面334上的一端具有传导凸缘340,并在焊接在箔基底330的外导电表面334上的另一端具有传导凸缘342。丝状导线形式的第一导电引线344被焊接或超声粘结在箔基底328的导电表面334以及接触垫324上。丝状导线形式的第二导电引线348被焊接或超声粘结在箔基底330的导电表面334以及可微调电阻器322的接触垫324上。来自热敏电阻326的引线与动力限制控制电路122(参见图1和2)相连。在备选实施方式中,箔基底328和330可以是金属化陶瓷互连元件。
图9表示具有与图5-8所示类似的元件的热感应装置的第二实施方式。图9中的开关半导体被构造成IGBT电路小片400。另外对图10进行参照,图10表示图9所示IGBT电路小片400的一部分的更靠近的视图。
IGBT电路小片400包括氧化和氮化晶片402,例如氧化铍晶片,其在上表面上通过铜箔板404金属化并在下表面上通过铜箔板406金属化。硅半导体开关晶体管芯片408被焊接在箔404上,并且第一金属层410例如铜或铝起到了开关晶体管芯片408触点区域的作用。陶瓷层412连接在第一金属层410上,并且第二金属层414连接在陶瓷层412上。第一金属层414起到了平衡陶瓷层412和第一金属层410放置以防半导体开关晶体管408挠曲以及受到其它应力的作用。第二金属层414具有与穿过陶瓷层412以接触开关晶体管408的孔418对准的窗口416。
二极管420相对于IGBT电路小片400横向安装并具有顶部铜层422。在IGBT电路小片组件400与二极管420之间的迹线424在铜层404上延伸到动力限制控制电路122(参见图1和2),用于中断或减小流向反相电路118(参见图1和2)的电流。由附图标记424表示的每个迹线可以唯一用于温度感应电路和门信号460。
利用温度传感器426,428分别测量IGBT电路小片408和二极管420的温度。在优选实施方式中,温度传感器426,428是热敏电阻,但备选地温度传感器426,428可以是热电偶,或其它温度感应装置。
温度传感器426安装在电路小片400的第二金属层414的两个L形迹线438和440上。U形开口430具有由弯曲436分隔的支线432,434。L形迹线438和440通过间隙442相互间隔。L形迹线438和440具有短支线444和446以及长支线448和450。短支线444和446被焊接或粘结在温度传感器426的端部凸缘452和454上,同时长支线448和450具有焊接或超声粘结在迹线424上的细引线456和458,所述迹线424与动力限制控制电路122(参见图1和2)相连。当IGBT电路小片400的温度超过预定等级时,动力限制控制122(参见图1和2)中断或限制流向IGBT电路小片400的电流。单独的细引线460时箔层414与迹线424相连,以例如传送IGBT电路小片400的门信号。
二极管420还在箔层422上具有U形开口462,使得温度传感器428可以直接监控二极管420的温度。与IGBT电路小片400上的温度传感器426相同,温度传感器428被焊接或粘结在成对L形迹线468和470的短支线464和466上。长支线472和474的第一端具有焊接或超声粘结在其上的细引线476和478,第二端的引线粘结在与动力限制电路122(参见图1和2)相连的迹线424上。
中断电流所处的温度等级在大约125℃到大约175℃的范围内,优选为大约150℃。通常并作为实例,硅的最大操作温度大约为175℃。然而,由于制造上的可变性和误差,本发明一种实施方式的动力限制控制电路122防止温度超过150℃。其它实施方式可以包括硅和被评定具有更高温度例如大于200℃以及大于300℃的其它材料。
根据本发明的实施方式,在一侧也就是顶侧感应反相电路118的温度并在底侧冷却反相电路118。通过在图1-2,5和9中以虚线示出的散热装置134实现冷却。散热装置134优选通过流体冷却,所述流体在一种实施方式中是空气,在其它实施方式中是循环液体。液体可以在蒸发之前或之后得到喷射并回收,或者以液态流过反相电路并通过图1和2所示的散热器136进行冷却。
在另一实施方式中,图1和2所示的反相电路118可以是安装在单个基底上的多个IGBT电路小片和二极管。温度传感器可以设置在一个或多个IGBT电路小片和二极管上。而且,尽管描述的是反相电路118,但在备选实施方式中,温度传感器120可以安装在任何类型的动力电子装置上。
尽管已经在以上详细描述中提出了至少一个示例性实施方式,但应该认识到存在多种变化。还应该认识到示意性实施方式或多个示例性实施方式仅仅是示例,绝并不是要限制本发明的范围、应用或构造。相反,以上详细描述将使本领域技术人员具有方便实施所述示意性实施方式或多个示意性实施方式的线路图。应该认识到在不脱离由附加权利要求及其法定等效内容提出的本发明范围的前提下可以对元件功能和布置做出多种改变。
Claims (20)
1.一种用于对动力电子装置中的温度进行控制的冷却系统,所述动力电子装置包括具有主要表面的半导体,所述冷却系统包括:
与半导体的主要表面相连的温度传感器;以及
与温度传感器相连的控制电路,控制电路被构造成在温度超过预定温度时减小流向反相电路的电流。
2.如权利要求1所述的冷却系统,其特征在于,控制电路被构造成在温度超过预定温度时使流向反相电路的电流减小到基本上为零。
3.如权利要求1所述的冷却系统,其特征在于,温度传感器是热敏电阻或热电偶。
4.如权利要求1所述的冷却系统,其特征在于,所述预定温度大约为150℃。
5.如权利要求1所述的冷却系统,其特征在于,主要表面是半导体的上表面,并且半导体具有被构造成由流体冷却剂冷却的下表面。
6.如权利要求1所述的冷却系统,其特征在于,还包括与半导体的主要表面相连的金属基底,其中温度传感器连接在金属基底上。
7.如权利要求1所述的冷却系统,其特征在于,还包括与半导体相连的互连元件,其中温度传感器与互连元件相连。
8.如权利要求1所述的冷却系统,其特征在于,反相电路还包括靠近半导体布置的二极管,冷却系统还包括与控制电路相连并安装在二极管上的第二温度传感器。
9.一种用于监控至少一个动力电子装置中的温度的系统,所述动力电子装置向机动车的AC电动机提供交流电,其中所述至少一个动力电子装置包括具有主要表面的半导体,所述主要表面的至少一部分露出,所述系统包括:
与半导体的主要表面的露出部分相连的至少一个基底;
电安装在至少一个基底上并与其电连接的热敏电阻,其被构造成测量半导体的温度;以及
与热敏电阻电连接并被构造成控制半导体DC电流的动力控制电路,该动力控制电路被构造成在半导体温度超过预定温度时减小流向半导体的电流。
10.如权利要求9所述的系统,其特征在于,所述预定温度大约为150℃。
11.如权利要求9所述的系统,其特征在于,动力控制电路被构造成在温度超过预定温度时使反相电路的电流减小到基本上为零。
12.如权利要求9所述的系统,其特征在于,所述至少一个基底包括与半导体露出的主要表面相连并相互间隔成一定距离的两个基底,热敏电阻桥接这两个基底。
13.如权利要求9所述的系统,其特征在于,动力电子装置包括布置在模块中的多个反相电路,这些反相电路各自包括靠近每个半导体布置的二极管,并且半导体的预定温度是第一预定温度,以及
所述系统还包括另外的热敏电阻,其安装在每个二极管上并与控制电路相连,以在二极管超过第二预定温度时减小流向模块的电流。
14.一种基底子组件,包括:
具有第一和第二相对的金属化主要表面的陶瓷晶片;
在第一金属化主要表面上远离陶瓷晶片延伸以与第一终端元件电连接的第一金属接头;
可导电地粘结在陶瓷晶片的第一金属化表面上的半导体开关装置,其中半导体开关装置包括在第一表面上的电极;
靠近半导体开关装置粘结在陶瓷晶片的第一金属化表面的一部分上的第一陶瓷层,该第一陶瓷层具有金属化第一表面;
在第一陶瓷层的金属化第一表面上远离陶瓷晶片延伸以与第二终端元件电连接的第二金属接头;
导电粘结在半导体开关装置的第一表面的电极上并且还粘结在第一陶瓷层的金属化第一表面上的第一金属层;
粘结在第一金属层上的第二陶瓷层,该第二陶瓷层布置在半导体开关装置上;
粘结在第二陶瓷层上的第二金属层;以及
与半导体开关装置相连的温度传感器,该温度传感器被构造成测量半导体装置的温度。
15.如权利要求14所述的基底子组件,其特征在于,所述半导体开关装置是IGBT。
16.如权利要求14所述的基底子组件,其特征在于,温度传感器是热敏电阻。
17.如权利要求14所述的基底子组件,其特征在于,温度传感器粘结在第二金属层上。
18.如权利要求14所述的基底子组件,其特征在于,温度传感器粘结在第二陶瓷层上。
19.如权利要求14所述的基底子组件,其特征在于,第一金属层、第二陶瓷层、以及第二金属层构成了与半导体开关装置的热膨胀系数大致匹配的互连元件。
20.如权利要求14所述的基底子组件,其特征在于,还包括靠近半导体开关装置布置的二极管,以及与二极管相连的另外的温度传感器。
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US11/758,781 US7857509B2 (en) | 2007-08-22 | 2007-08-22 | Temperature sensing arrangements for power electronic devices |
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CN103029650A (zh) * | 2011-08-30 | 2013-04-10 | 通用汽车环球科技运作有限责任公司 | 预测在车辆逆变器功率模块中的晶体管温度以及相关的操作方法 |
CN105928637A (zh) * | 2016-06-27 | 2016-09-07 | 滨州学院 | 一种igbt功率模块芯片温度标定装置及其温度修正方法 |
CN107614328A (zh) * | 2015-07-06 | 2018-01-19 | 斯玛特有限责任公司 | 运输车辆的供电系统 |
CN113228265A (zh) * | 2019-07-03 | 2021-08-06 | 富士电机株式会社 | 半导体组件的电路构造 |
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CN103029650A (zh) * | 2011-08-30 | 2013-04-10 | 通用汽车环球科技运作有限责任公司 | 预测在车辆逆变器功率模块中的晶体管温度以及相关的操作方法 |
CN103029650B (zh) * | 2011-08-30 | 2015-05-20 | 通用汽车环球科技运作有限责任公司 | 预测在车辆逆变器功率模块中的晶体管温度以及相关的操作方法 |
CN107614328A (zh) * | 2015-07-06 | 2018-01-19 | 斯玛特有限责任公司 | 运输车辆的供电系统 |
CN105928637A (zh) * | 2016-06-27 | 2016-09-07 | 滨州学院 | 一种igbt功率模块芯片温度标定装置及其温度修正方法 |
CN105928637B (zh) * | 2016-06-27 | 2019-01-04 | 滨州学院 | 一种igbt功率模块芯片温度标定装置及其温度修正方法 |
CN113228265A (zh) * | 2019-07-03 | 2021-08-06 | 富士电机株式会社 | 半导体组件的电路构造 |
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US20090052210A1 (en) | 2009-02-26 |
US7857509B2 (en) | 2010-12-28 |
DE102008026541A1 (de) | 2009-02-26 |
CN101334679B (zh) | 2011-04-20 |
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