CN101312230A - 相变化存储装置及其制造方法 - Google Patents
相变化存储装置及其制造方法 Download PDFInfo
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- CN101312230A CN101312230A CNA2007101045033A CN200710104503A CN101312230A CN 101312230 A CN101312230 A CN 101312230A CN A2007101045033 A CNA2007101045033 A CN A2007101045033A CN 200710104503 A CN200710104503 A CN 200710104503A CN 101312230 A CN101312230 A CN 101312230A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000008859 change Effects 0.000 title description 24
- 239000012782 phase change material Substances 0.000 claims abstract description 217
- 239000010410 layer Substances 0.000 claims description 575
- 230000015654 memory Effects 0.000 claims description 88
- 239000000463 material Substances 0.000 claims description 62
- 125000006850 spacer group Chemical group 0.000 claims description 57
- 239000003989 dielectric material Substances 0.000 claims description 19
- 239000002131 composite material Substances 0.000 claims description 17
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 229910001080 W alloy Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 150000004770 chalcogenides Chemical class 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 15
- 239000005380 borophosphosilicate glass Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001786 chalcogen compounds Chemical class 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007101045033A CN101312230B (zh) | 2007-05-25 | 2007-05-25 | 相变化存储装置及其制造方法 |
Applications Claiming Priority (1)
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CN2007101045033A CN101312230B (zh) | 2007-05-25 | 2007-05-25 | 相变化存储装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101312230A true CN101312230A (zh) | 2008-11-26 |
CN101312230B CN101312230B (zh) | 2010-10-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007101045033A Expired - Fee Related CN101312230B (zh) | 2007-05-25 | 2007-05-25 | 相变化存储装置及其制造方法 |
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CN (1) | CN101312230B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102800805A (zh) * | 2011-05-25 | 2012-11-28 | 中芯国际集成电路制造(上海)有限公司 | 相变存储单元及其形成方法 |
US8605493B2 (en) | 2008-12-31 | 2013-12-10 | Higgs Opl. Capital Llc | Phase change memory |
USRE45035E1 (en) | 2008-12-30 | 2014-07-22 | Higgs Opl. Capital Llc | Verification circuits and methods for phase change memory array |
USRE45189E1 (en) | 2007-11-08 | 2014-10-14 | Higgs Opl. Capital Llc | Writing system and method for phase change memory |
CN104425710A (zh) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
CN107275282A (zh) * | 2011-03-17 | 2017-10-20 | 美光科技公司 | 半导体结构及形成半导体结构的方法 |
CN109509833A (zh) * | 2017-09-15 | 2019-03-22 | 旺宏电子股份有限公司 | 半导体装置及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060108667A1 (en) * | 2004-11-22 | 2006-05-25 | Macronix International Co., Ltd. | Method for manufacturing a small pin on integrated circuits or other devices |
CN100442566C (zh) * | 2005-01-19 | 2008-12-10 | 财团法人工业技术研究院 | 一种相变化存储器及其制造方法 |
-
2007
- 2007-05-25 CN CN2007101045033A patent/CN101312230B/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE45189E1 (en) | 2007-11-08 | 2014-10-14 | Higgs Opl. Capital Llc | Writing system and method for phase change memory |
USRE45035E1 (en) | 2008-12-30 | 2014-07-22 | Higgs Opl. Capital Llc | Verification circuits and methods for phase change memory array |
US8605493B2 (en) | 2008-12-31 | 2013-12-10 | Higgs Opl. Capital Llc | Phase change memory |
CN107275282A (zh) * | 2011-03-17 | 2017-10-20 | 美光科技公司 | 半导体结构及形成半导体结构的方法 |
CN102800805A (zh) * | 2011-05-25 | 2012-11-28 | 中芯国际集成电路制造(上海)有限公司 | 相变存储单元及其形成方法 |
CN102800805B (zh) * | 2011-05-25 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | 相变存储单元及其形成方法 |
CN104425710A (zh) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
CN104425710B (zh) * | 2013-08-20 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
CN109509833A (zh) * | 2017-09-15 | 2019-03-22 | 旺宏电子股份有限公司 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
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CN101312230B (zh) | 2010-10-13 |
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