CN101310572A - 焊接装置以及焊接方法 - Google Patents

焊接装置以及焊接方法 Download PDF

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CN101310572A
CN101310572A CNA2006800429858A CN200680042985A CN101310572A CN 101310572 A CN101310572 A CN 101310572A CN A2006800429858 A CNA2006800429858 A CN A2006800429858A CN 200680042985 A CN200680042985 A CN 200680042985A CN 101310572 A CN101310572 A CN 101310572A
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circuit board
semiconductor element
container
high frequency
heating coil
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金原雅彦
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Toyota Industries Corp
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Toyoda Automatic Loom Works Ltd
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Abstract

本发明的焊接装置具有:收存电路板的能够密闭的容器;配置在半导体元件的正上方并且将半导体元件朝向电路板按压的重物;利用电磁感应作用使重物发热的高频加热线圈。此外,从重物离开配置高频加热线圈。并且,利用重物的发热对电路板的多个接合部位加热,将半导体元件焊接到这些接合部位。其结果是,简化装置结构并且能够实现有效的加热。

Description

焊接装置以及焊接方法
技术领域
本发明涉及在电路板上焊接半导体元件的焊接装置以及焊接方法。
背景技术
以往,作为接合金属构件与陶瓷构件的、或者接合基板与电子部件的方法,例如,公知使用专利文献1、2、3中公开的高频感应加热的方法。高频感应加热是如下现象:当在流过高频电流的线圈中放置导体时,该导体因电磁感应作用而发热。在专利文献1或专利文献2所公开的装置中,以包围导体构件(铁芯或加压夹具(jig))的方式,配置高频加热线圈。并且,利用该导体构件中所产生的热量使焊料熔融,将构件彼此接合。在接合时,对接合面加压,提供良好的接合状态。因此,在专利文献1或专利文献2所公开的接合装置中,导体构件起到发热体的作用,另一方面,也起到加压体的作用。在专利文献3中,利用高频感应加热使固定在保持板上的发热体发热。并且,利用该发热体的热量,对电子部件的电极加热,由此,使焊料熔融,将构件彼此接合。
但是,在半导体模块中,在电路板上密集配置有多个小的半导体元件。在将这样的多个半导体元件接合在电路板上的焊接装置中,由于以下理由,应用专利文献1或专利文献2所公开的技术非常困难。即,需要分别对应于在电路板上密集配置的多个小的半导体元件设置起到发热体以及加压体作用的导体构件,并且分别以高频加热线圈包围这些导体构件。此外,对于在高频感应加热中所使用的高频加热线圈来说,通常在内部具有用于对线圈进行冷却的冷却水流过的水通道。因此,当将专利文献1或专利文献2所公开的技术应用于半导体模块用的焊接装置中时,焊接装置的结构变得复杂,这种应用实际上比较困难。
此外,使焊料熔融后,该熔融焊料通过冷却步骤而凝固,由此,将半导体元件接合在电路板上。在该冷却步骤中,为了得到半导体元件良好的接合状态,优选焊料冷却时利用导体构件(加压体)对半导体元件加压。由此,如专利文献1、2所示,在加压体的周围设置高频加热线圈的结构中,直到冷却步骤结束,不能使用高频加热线圈。这导致作业效率的恶化。
此外,对于半导体元件(晶体管或二极管)向电路板的焊接作业来说,例如,优选在惰性气体气氛中进行,在该情况下,需要在焊接作业中进行气氛调整。但是,专利文献3公开了对电子部件的指定位置(电极)加热而使焊料熔融的内容,但关于在惰性气体气氛中一边调整气氛一边进行焊接作业,并未公开。因此,专利文献3所公开的技术不能说是适于将半导体元件焊接在基板上的技术。此外,在专利文献3中,为了进行气氛调整,与专利文献2所公开的技术相同地,采用将高频加热线圈配置在惰性气体气氛中的结构。但是,在此情况下,将高频加热线圈配置在装入了惰性气体的容器中,导致容器的大型化以及与其相伴的焊接装置的大型化,并且,导致惰性气体的浪费。
专利文献1:特开昭59-207885号公报
专利文献2:实开平5-13660号公报
专利文献3:特开平8-293668号公报
发明内容
本发明的目的在于提供一种能够实现有效加热的简化的焊接装置以及能够实现有效焊接作业的焊接方法。
为了达到所述目的,在本发明的一个实施方式中,提供一种在电路板的多个接合部位分别焊接半导体元件的焊接装置。所述焊接装置包括能够密闭的容器。在隔着焊料将所述半导体元件分别载置在所述电路板的多个所述接合部位的状态下,将电路板收存在所述容器内。所述焊接装置包括由导体材料构成的加压体。该加压体载置在所述半导体元件的正上方,以将所述半导体元件朝向所述电路板按压。所述焊接装置包括以离开所述加压体的状态配置的高频加热线圈。对于该高频加热线圈来说,在通过高频电流时,利用电磁感应作用使加压体发热,由此,将所述焊料加热并使其熔融。
在本发明的其他实施方式中,提供一种分别将半导体元件焊接在电路板的多个接合部位的焊接方法。所述焊接方法具有如下步骤:将所述电路板收存在能够密闭的容器内;隔着焊料将所述半导体元件分别载置在所述电路板的多个所述接合部位;在所述半导体元件的正上方载置加压体,并将所述半导体元件朝向所述电路板按压;在将载置有所述半导体元件以及所述加压体的所述电路板收存在所述容器内的状态下,将该容器密闭;以离开所述加压体的状态配置高频加热线圈;在所述高频加热线圈中通过高频电流,以利用电磁感应作用使加压体发热,由此,对所述焊料加热并使其熔融。
在本发明的其他实施方式中,提供一种半导体装置的制造方法,该半导体装置具有电路板和分别焊接在该电路板上的多个接合部位的半导体。所述制造方法包括如下步骤:将所述电路板收存在能够密闭的容器内;隔着焊料将所述半导体元件分别载置在所述电路板的多个所述接合部位;将加压体载置在所述半导体元件的正上方,并将所述半导体元件朝向所述电路板按压;在将载置有所述半导体元件以及所述加压体的所述电路板收存在所述容器内的状态下,将该容器密闭;以离开所述加压体的状态配置高频加热线圈;在所述高频加热线圈中通过高频电流,以利用电磁感应作用使加压体发热,由此,对所述焊料加热并使其熔融。
附图说明
图1是本发明一个实施方式的半导体模块的平面图。
图2是沿图1的2-2线的剖面图。
图3是用于在图1的半导体模块上进行焊接的焊接装置的纵剖面图。
图4(a)是在图3的焊接装置中所使用的夹具的平面图,图4(b)是在图3的焊接装置中所使用的重物(weight)的立体图。
图5是表示针对半导体模块的高频加热线圈的配置的示意图。
具体实施方式
以下,根据图1~图5对将本发明具体化后的一个实施方式进行说明。
图1以及图2示出作为半导体装置的半导体模块10。半导体模块10具有:电路板11;与该电路板11接合的多个(本实施方式中为4个)半导体元件12;作为散热器的散热片(heat sink)13。将金属板15、16接合在陶瓷基板14的两面,由此,构成电路板11。例如,陶瓷基板14由氮化铝、氧化铝、氮化硅等形成。此外,金属板15起到布线层的作用,例如,由铝或铜等形成。半导体元件12与金属板15接合(焊接)。图2中的符号“H”表示焊料层。半导体元件12包括IGBT(Insurated GateBipolar Transistor:绝缘栅双极晶体管)或二极管。此外,金属板16起到将陶瓷基板14与散热片13接合的接合层的作用,例如,由铝或铜等形成。散热片13与金属板16接合。
图3概略地示出本实施方式的焊接装置HK的结构。焊接装置HK是用于将半导体元件12焊接到电路板11(金属板15)上的装置。此外,本实施方式的焊接装置HK是对如图5所示的包括6块电路板11的作为半导体装置的半导体模块100进行焊接的装置。因此,将24个半导体元件12焊接到半导体模块100上。而且,在图5所示的半导体模块100中,图1所示的6个半导体模块10的散热片13构成为整体。将6个电路板11设置在该构成为整体的散热片13上。
焊接装置HK具有能够密闭的容器(室)17,该容器17包括具有开口部18a的箱型的主体构件18、和将该主体构件18的开口部18a开放以及闭锁的盖构件19。在主体构件18上,设置对半导体模块100进行定位并进行支撑的支撑台(support base)20。此外,在主体构件18的开口边缘部配置可与盖构件19紧密接触的密封件(packing)21。
以能够将主体构件18的开口部18a闭锁的大小形成盖构件19。在主体构件18上安装盖构件19,由此,在容器17内形成密闭空间S。此外,盖构件19具有与密闭空间S对置的部位22,该部位22由使磁力线(磁通量)通过的电绝缘材料形成。在本实施方式中,使用玻璃作为电绝缘材料,盖构件19的该部位22由玻璃板22构成。
此外,在主体构件18上连接有用于向容器17内提供还原性气体(在本实施方式中为氢气)的还原气体供给部23。还原气体供给部23具有:管道23a;设置在该管道23a上的开闭阀23b;氢气箱23c。此外,在主体构件18上连接有用于向容器17内提供惰性气体(在本实施方式中为氮气)的惰性气体供给部24。惰性气体供给部24具有:管道24a;设置在该管道24a上的开闭阀24b;氮气箱24c。此外,在主体构件18上连接有用于将在容器17内充满的气体排出到外部的气体排除部25。气体排出部25具有:管道25a;设置在该管道25a上的开闭阀25b;真空泵25c。焊接装置HK具有还原气体供给部23、惰性气体供给部24以及气体排出部25,由此,以能够调整密闭空间S内的压力的方式构成,通过压力调整,对密闭空间S进行加压或减压。
此外,在主体构件18上连接有在焊接作业后向容器17内提供热介质(冷却用气体)的供给部(热介质供给部)26。热介质供给部26具有:管道26a;设置在该管道26a上的开闭阀26b;气体箱26c。热介质供给部26对收存在容器17内的半导体模块100的散热片13提供冷却用气体。而且,从热介质供给部26提供的热介质也可以是冷却液。此外,在主体构件18中设置用于测量容器17内的温度的温度传感器(例如,热电偶等)27。
在焊接装置HK的上部,具体地说,在盖构件19的上方,设置多个高频加热线圈28。本实施方式的焊接装置HK具有6个高频加热线圈28。如图5所示,以分别与6个电路板11相对应的方式,将这些高频加热线圈28分别配置在电路板11的上侧。在本实施方式中,对于各高频加热线圈28来说,从上方观察时,具有能够覆盖一个电路板11的大小,并且,比后述的重物35的上表面的轮廓大。此外,各高频加热线圈28以在一个平面内构成螺旋状的方式形成,作为整体作成大致四角板状。此外,各高频加热线圈28以与盖构件19对置的方式、具体地说与玻璃板22对置的方式配置。此外,各高频加热线圈28与焊接装置HK所具有的高频发生装置29电连接,基于设置在容器17内的所述温度传感器27的测量结果,被控制为预定温度。此外,各高频加热线圈28具有用于在内部通过冷却水的冷却路径30,并且,与焊接装置HK所具有的冷却水箱31连接。
图4(a)示出进行焊接时使用的夹具32,图4(b)示出作为加压体的重物35。夹具32形成为平板状,具有与电路板11的陶瓷基板14相同的大小。对于夹具32来说,例如,由石墨或陶瓷等材料形成。如图3所示,在焊接时,为了相对于电路板11对焊料片33、半导体元件12、重物35进行定位,使用夹具32。因此,在夹具32上形成定位用的多个贯通孔34,这些贯通孔34位于与在电路板11上接合半导体元件12的部位相对应的部位。各贯通孔34具有与对应的半导体元件12的尺寸相对应的大小。在本实施方式中,在电路板11上接合4个半导体元件12,因此,在夹具32上形成4个贯通孔34。
使用如下材料形成重物35:可利用电磁感应作用而发热的材料,即,利用通过自身的磁通量的变化而产生电流时,由于自身电阻而发热的材料。在本实施方式中,重物35由不锈钢形成。如图3所示,在焊接时,重物35载置在半导体元件12的正上方,与该半导体元件12的上表面(非接合面)接触。此外,重物35是为了将半导体元件12向电路板11按压而使用的。本实施方式的重物35是利用切削所制作一体化部件。重物35具有多个(4个)加压面35a,这些加压面35a能够分别插入到夹具32的贯通孔34中,并且,分别与4个半导体元件12的非接合面(上表面)接触,能够对所对应的半导体元件12加压。图4(a)示出将重物35设置在夹具32上的状态,并以双点划线表示重物35。
然后,对使用本实施方式的焊接装置HK进行半导体元件12的焊接的方法进行说明。焊接步骤是半导体装置(半导体模块100)的制造方法的一个步骤。而且,在使用本实施方式的焊接装置HK进行焊接的情况下,预先制作在一个散热片13上接合有6个电路板的物体(以下,称为“焊接目标”)。即,焊接目标相当于从图5所示的半导体模块100除去半导体元件12后的物体。
在进行焊接时,首先,从主体构件18上将盖构件19拆下,使开口部18a开放。并且,如图3所示,将焊接目标放置在主体构件18的支撑台20上,相对支撑台20进行定位。然后,将夹具32放置在焊接目标的各电路板11(陶瓷基板14)上,在夹具32的各贯通孔34内配置焊料片33和半导体元件12。将焊料片33配置在电路板11(金属板15)和半导体元件12之间。并且,在载置有半导体元件12的电路板11上放置重物35。在该状态下,在电路板11(金属板15)上,从金属板15侧依次层叠焊料片33、半导体元件12、重物35。沿着焊接装置HK的图3中的上下方向,对焊料片33、半导体元件12以及重物35进行层叠。此外,重物35的加压面35a与对应的半导体元件12的非接合面接触,对所对应的半导体元件12加压。
然后,将盖构件19安装在主体构件18上,关闭开口部18a,在容器17内形成密闭空间S。在密闭空间S内收存有焊接目标的状态(图3所示)下,将各高频加热线圈28配置在焊接目标的上方,具体地说,配置在对应的重物35的上方。在各高频加热线圈28和焊接目标(各重物35)之间,配置安装在盖构件19上的玻璃板22。在本实施方式中,从上方观察高频加热线圈28时,以高频加热线圈28从由重物35的上表面轮廓形成的区域露出的方式,构成以及配置高频加热线圈28。如本实施方式,对于形成为螺旋状的高频加热线圈28来说,在靠近其中央处产生很多磁通量,因此,优选在与高频加热线圈28的中央相对应的位置配置重物35,换言之,配置电路板11的针对半导体元件12的接合部位。
然后,操作气体排出部25,对容器17内部进行抽真空。并且,操作惰性气体供给部24,向容器17内提供氮气,使密闭空间S内充满惰性气体。反复多次进行该抽真空和氮气供给之后,操作还原气体供给部23,向容器17内提供氢气,使密闭空间S内成为还原气体气氛。
然后,使高频发生装置29工作,在各高频加热线圈28中流过高频电流。于是,产生通过重物35的高频的磁通量,并且,在该重物35中产生涡电流。其结果是,重物35由于电磁感应作用而发热,其热量从重物35的加压面35a传到半导体元件12。并且,重物35所产生的热量通过重物35的加压面35a集中地传到电路板11的各接合部位,对电路板11的各接合部位进行加热。其结果是,通过半导体元件12传到焊料片33的热量成为熔融温度以上的温度,焊料片33熔融。然后,半导体元件12被重物35向电路板11按压,所以,不会由于熔融后的焊料的表面张力而移动。并且,焊料片33完全熔融时,使高频发生装置29停止。而且,基于设置在容器17内的温度传感器27的检测结果,控制各高频加热线圈28的温度。此外,根据焊接作业的进行状况,进行容器17(密闭空间S)内的气氛调整,即,对容器17内的压力进行加压以及减压。
并且,在焊料片33完全熔融的情况下,操作热介质供给部26,向容器17内提供冷却用气体。供给到容器17内的冷却用气体流过散热片13的周围,使焊接目标(半导体模块100)冷却。熔融后的焊料由于冷却到小于熔融温度而凝固,将金属板15和半导体元件12接合。在该状态下,焊接作业结束,半导体模块100完成。并且,从主体构件18上取出盖构件19,拆除夹具32和重物35。之后,从容器17内取出半导体模块100。而且,从容器17内取出半导体模块100时,首先,操作气体排出部25,排出密闭空间S内的气体。
本实施方式有以下优点。
(1)与重物35离开地配置高频加热线圈28,使重物35发热。因此,在电路板11上焊接多个半导体元件12的情况下,也能够不按照每个重物35设置高频加热线圈28地对多个接合部位进行加热。此外,在熔融后的焊料的冷却时,能够与重物35以及电路板11独立地处理高频加热线圈28。其结果是,能够使用该高频加热线圈28进行其他的半导体模块100的焊接。因此,将焊料装置HK的结构简化,能够改善焊接作业的效率。
(2)此外,使按压半导体元件12的重物35发热,对电路板11的接合部位加热,由此,能够集中地对该接合部位传导热量。因此,与对电路板11整体或容器17整体进行加热的情况相比较,能够实现焊料片33的有效加热。
(3)在载置在半导体元件12的正上方的重物35的上方,配置高频加热线圈28。因此,高频加热线圈28能够对电路板11的多个接合部位平面地传导热量,能够均匀地对电路板11的多个接合部位进行加热。其结果是,关于配置在多个接合部位的焊料片33,能够使熔融的开始时间大致相同,并且,能够使熔融的结束时间大致相同,可谋求焊接作业的效率化。
(4)将高频加热线圈28配置在容器17的外部。因此,对于高频加热线圈28来说,除了焊接作业的加热时间以外,其使用不受约束。因此,利用高频加热线圈28进行加热后,如果立即交换与该高频加热线圈28对置的容器17等,则不等待焊料冷却就能够进行下一次的焊接作业,可以提供面向生产线的焊接装置HK。
(5)而且,将高频加热线圈28配置在容器17的外部而不是容器17的内部,由此,能够使容器17的容积极力变小,可谋求容器17的小型化。此外,气氛调整主要包括:从容器17内排出空气(抽真空);惰性气体(氮气等)的供给和排出;还原性气体(氢气等)的供给和排出。因此,使容器17的容积变小,由此,例如,关于空气的排出,减少排出所需的时间,或者减少排出所需的能量、例如使真空泵25c工作所需要的能量的消耗量。此外,关于惰性气体或还原性气体的供给或排出,能够减少供给或排出所需的时间、或减少供给或排出所消耗的能量的消耗量、或者减少所供给的气体的消耗量。
(6)此外,由玻璃板22(电绝缘材料)形成与高频加热线圈28对置的容器17的部位(在本实施方式中是盖构件19)。因此,能够避免容器17自身发热,并且,能够允许应该使重物35加热的磁通量的通过。
(7)在电路板11的接合部位的冷却时,向与电路板11接合的散热片13的周围提供冷却用气体,进行冷却。因此,通过散热片13,有效地冷却电路板11的接合部位,能够谋求缩短冷却时间。其结果是,也能够谋求缩短焊接作业的时间。
(8)重物35具有多个能够与多个半导体元件12的非接合面接触的加压面35a。即,将重物35构成为一个与多个半导体元件12对应的集合体。因此,能够将可利用一个重物35进行加压的面积扩大,难以受到熔融后的焊料的表面张力引起的影响,能够在稳定的状态下进行焊接作业。
(9)在进行多个电路板11的焊接的情况下,对应地对各电路板11(重物35)配置一个高频加热线圈28,使载置在该电路板11上的重物35发热。因此,与由一个高频加热线圈28使分别载置在多个电路板11上的多个重物35加热的情况相比较,效果良好。
而且,所述实施方式也可以进行如下变更。
对于重物35来说,取代构成为由切削所形成的一体化部件,也可以构成为接合多个分割体而成的一个集合体。
重物35也可以构成为按照每个半导体元件12而设置的分割体。例如,在本实施方式的情况下,在各电路板11上接合4个半导体元件12,因此,也可以分别在这些半导体元件12的正上方载置4个重物35。
重物35也可以安装在盖构件19的背面。例如,如图3中以双点划线所示,可以将重物35直接安装在盖构件19上,也可以悬挂在盖构件19上。在此情况下,用盖构件19关闭开口部18a时,重物35载置在半导体元件12的正上方,对该半导体元件12加压。使开口部18a开放时,解除重物35对半导体元件12加压的状态。根据该结构,进行盖构件19安装或拆卸的同时,使重物35载置在半导体元件12上以及从半导体元件12上除去,能够减少作业步骤。
取代不锈钢,重物35也可以由铁或石墨形成。
重物35也可以由热导率不同的两种导体材料构成。例如,可以使用不锈钢和铜构成重物35。在此情况下,将铜配置在加压面35a侧,由此,抑制重物35的加热不均,能够均匀地对半导体元件12传导热量。通常,对于重物35来说,温度从外侧向中央逐渐升高,但是,将加压面35a侧作成热导率较好的导体材料,由此,促进中央的温度上升,能够在短时间内对加压面35a整体加热。
在焊接装置HK中进行焊接的焊接目标,也可以是未接合有散热片13的状态下的电路板11。
对于盖构件19来说,可以是相对主体构件18装卸式,也可以是开闭式。
也可以由玻璃以外的电绝缘材料例如陶瓷或树脂形成盖构件19的与高频加热线圈28对置的部位。此外,在为了盖构件19能够承受容器17的内外的气压差而需要提高强度的情况下,例如,盖构件19也可以由玻璃纤维和树脂的复合材料(GFRP:玻璃纤维强化塑料)形成。此外,盖构件19也可以由非磁性材料的金属构成。而且,在盖构件19使用金属的情况下,使用电阻率比重物35高的金属较好。此外,盖构件19也可以由金属和绝缘材料的复合材料构成。
高频加热线圈28以成为与重物35的上表面轮廓相同的大小的方式形成,该高频加热线圈28也可以以与重物35的上表面轮廓一致的方式配置在该重物35的上方。
对于高频加热线圈28来说,在多个重物35的上方,可以跨过多个重物配置。此时,能够减少针对高频加热线圈28的高频电流的供给路径或冷却水的供给路径,可进一步简化焊接装置HK的结构。
随着生产流程化,能够移动容器17,也可以沿与该容器17一起移动的重物35的移动路径配置高频加热线圈28。此时,也可以将高频加热线圈28构成为沿移动路径的形状,或者也可以沿移动路径配置多个。这样构成,由此,能够一边使容器17移动一边加热。
也可以以与重物35的侧面对置的方式配置高频加热线圈28。
高频加热线圈28也可以配置在容器17(密闭空间S)内。
容器17也可以安装封入热介质的箱,在冷却时向容器17内提供热介质。

Claims (11)

1.一种焊接装置,分别在电路板的多个接合部位焊接半导体元件,其特征在于,具有:
能够密闭的容器,在隔着焊料分别将所述半导体元件载置在所述电路板的多个所述接合部位的状态下,将电路板收存在容器内;
加压体,用于将所述半导体元件朝向所述电路板按压,载置在所述半导体元件的正上方并由导体材料构成;
以离开所述加压体的状态配置的高频加热线圈,该高频加热线圈通过高频电流时,根据电磁感应作用使加压体发热,由此,对所述焊料加热并使其熔融。
2.如权利要求1的焊接装置,其特征在于,
所述高频加热线圈配置在所述加压体的上方。
3.如权利要求1或权利要求2的焊接装置,其特征在于,
所述高频加热线圈配置在所述容器的外侧,在所述容器中,与所述高频加热线圈对置的部位由非磁性材料形成。
4.如权利要求1或权利要求2的焊接装置,其特征在于,
所述高频加热线圈配置在所述容器的外侧,在所述容器中,与所述高频加热线圈对置的部位由非磁性并且电阻率比所述加压体高的材料形成。
5.如权利要求1或权利要求2的焊接装置,其特征在于,
所述高频加热线圈配置在所述容器的外侧,在所述容器中,与所述高频加热线圈对置的部位由非磁性并且电绝缘材料形成。
6.如权利要求1~权利要求5的任意一项的焊接装置,其特征在于,
在所述电路板上接合有散热器,在所述容器上连接有向所述散热器提供热介质的供给部。
7.如权利要求1~权利要求6的任意一项的焊接装置,其特征在于,
所述容器具有:箱状的主体构件,其具有开口部;盖构件,能够将所述开口部开放以及闭锁,
所述加压体安装在所述盖构件上,在以所述盖构件闭锁所述开口部时,该加压体载置在所述半导体元件的正上方,对该半导体元件加压,在将所述开口部开放时,解除所述半导体元件的加压状态。
8.如权利要求1~权利要求7的任意一项的焊接装置,其特征在于,
所述加压体具有同时对所述多个半导体元件加压的加压面。
9.一种焊接方法,分别在电路板的多个接合部位焊接半导体元件,其特征在于,具有如下步骤:
将所述电路板收存在能够密闭的容器内;
隔着焊料将所述半导体元件分别载置在所述电路板的多个所述接合部位;
在所述半导体元件的正上方载置加压体,并将所述半导体元件朝向所述电路板按压;
在将载置有所述半导体元件以及所述加压体的所述电路板收存在所述容器内的状态下,将该容器密闭;
以离开所述加压体的状态配置高频加热线圈;
在所述高频加热线圈中通过高频电流,以利用电磁感应作用使加压体发热,由此,对所述焊料加热并使其熔融。
10.如权利要求9的焊接方法,其特征在于,
在所述焊料熔融后,向与所述电路板接合的散热器提供热介质,使熔融焊料冷却以及凝固。
11.一种半导体装置的制造方法,该半导体装置具有电路板和分别焊接在该电路板上的多个接合部位的半导体元件,其特征在于,具有如下步骤:
将所述电路板收存在能够密闭的容器内;
隔着焊料将所述半导体元件分别载置在所述电路板的多个所述接合部位;
将加压体载置在所述半导体元件的正上方,并将所述半导体元件朝向所述电路板按压;
在将载置有所述半导体元件以及所述加压体的所述电路板收存在所述容器内的状态下,将该容器密闭;
以离开所述加压体的状态配置高频加热线圈;
在所述高频加热线圈中通过高频电流,以利用电磁感应作用使加压体发热,由此,对所述焊料加热并使其熔融。
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