CN101305259B - 面位置检测装置、曝光装置以及元件制造方法 - Google Patents
面位置检测装置、曝光装置以及元件制造方法 Download PDFInfo
- Publication number
- CN101305259B CN101305259B CN2006800422628A CN200680042262A CN101305259B CN 101305259 B CN101305259 B CN 101305259B CN 2006800422628 A CN2006800422628 A CN 2006800422628A CN 200680042262 A CN200680042262 A CN 200680042262A CN 101305259 B CN101305259 B CN 101305259B
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- Prior art keywords
- mentioned
- reflecting surface
- theta
- fully reflecting
- light
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Optical Elements Other Than Lenses (AREA)
- Automatic Focus Adjustment (AREA)
Abstract
Description
Claims (50)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210150196.3A CN102722093B (zh) | 2005-11-15 | 2006-11-14 | 位置检测装置、曝光装置以及元件制造方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005329645 | 2005-11-15 | ||
JP629645/2005 | 2005-11-15 | ||
JP2006297486A JP5622068B2 (ja) | 2005-11-15 | 2006-11-01 | 面位置検出装置、露光装置、およびデバイスの製造方法 |
JP297486/2006 | 2006-11-01 | ||
PCT/JP2006/322595 WO2007058151A1 (ja) | 2005-11-15 | 2006-11-14 | 面位置検出装置、露光装置、およびデバイスの製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210150196.3A Division CN102722093B (zh) | 2005-11-15 | 2006-11-14 | 位置检测装置、曝光装置以及元件制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101305259A CN101305259A (zh) | 2008-11-12 |
CN101305259B true CN101305259B (zh) | 2012-07-04 |
Family
ID=38048537
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210150196.3A Active CN102722093B (zh) | 2005-11-15 | 2006-11-14 | 位置检测装置、曝光装置以及元件制造方法 |
CN2006800422628A Active CN101305259B (zh) | 2005-11-15 | 2006-11-14 | 面位置检测装置、曝光装置以及元件制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210150196.3A Active CN102722093B (zh) | 2005-11-15 | 2006-11-14 | 位置检测装置、曝光装置以及元件制造方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US8432554B2 (zh) |
EP (2) | EP1956339A4 (zh) |
JP (1) | JP5622068B2 (zh) |
KR (2) | KR101436172B1 (zh) |
CN (2) | CN102722093B (zh) |
HK (2) | HK1122611A1 (zh) |
SG (1) | SG169987A1 (zh) |
TW (1) | TWI417508B (zh) |
WO (1) | WO2007058151A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4846510B2 (ja) * | 2006-10-11 | 2011-12-28 | 株式会社東芝 | 表面位置計測システム及び露光方法 |
US20090025753A1 (en) * | 2007-07-24 | 2009-01-29 | Asml Netherlands B.V. | Lithographic Apparatus And Contamination Removal Or Prevention Method |
US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
US8896809B2 (en) | 2007-08-15 | 2014-11-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8111406B2 (en) | 2007-11-14 | 2012-02-07 | Nikon Corporation | Surface position detecting apparatus, surface position detecting method, exposure apparatus, and device manufacturing method |
DE102008017645A1 (de) | 2008-04-04 | 2009-10-08 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats |
US20110071784A1 (en) | 2009-09-21 | 2011-03-24 | Nikon Corporation | Goos-Hanchen compensation in autofocus systems |
US8620151B2 (en) * | 2010-03-12 | 2013-12-31 | Ability Enterprise Co., Ltd. | Photographic and projection module and electronic system having the same |
DE102010061950A1 (de) | 2010-11-25 | 2012-05-31 | Carl Zeiss Smt Gmbh | Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System |
US8993974B2 (en) | 2012-06-12 | 2015-03-31 | Nikon Corporation | Color time domain integration camera having a single charge coupled device and fringe projection auto-focus system |
US9529282B2 (en) | 2013-04-25 | 2016-12-27 | Nikon Corporation | Position-measurement systems |
JP2014215480A (ja) | 2013-04-26 | 2014-11-17 | 株式会社日立エルジーデータストレージ | 光学ユニットおよび投射型表示装置 |
JP2016157787A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社東芝 | 位置ズレ測定装置、位置ズレ測定プログラムおよび半導体装置の製造方法 |
DE102015105978B3 (de) * | 2015-04-20 | 2016-09-15 | Carl Mahr Holding Gmbh | Haltevorrichtung für eine optische Messeinrichtung |
KR102446684B1 (ko) * | 2017-09-28 | 2022-09-23 | 에이에스엠엘 네델란즈 비.브이. | 광학 높이 검출 시스템 |
CN108801162B (zh) * | 2018-06-28 | 2019-07-16 | 大连理工大学 | 一种厚光刻胶膜厚度的非接触式光学测量方法 |
KR20210137042A (ko) * | 2019-03-13 | 2021-11-17 | 에이에스엠엘 홀딩 엔.브이. | 리소그래피 장치, 계측 장치, 광학 시스템 및 방법 |
KR102545519B1 (ko) * | 2022-01-03 | 2023-06-21 | (주)오로스 테크놀로지 | 편광 변조가 최소화된 반사형 광학계 및 이를 구비한 분광 타원계 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0053730A1 (de) * | 1980-11-27 | 1982-06-16 | Webb Service GmbH | Schlüssel-Erkenner |
US4872747A (en) * | 1987-04-15 | 1989-10-10 | Cyberoptics Corporation | Use of prisms to obtain anamorphic magnification |
CN1448043A (zh) * | 2000-08-22 | 2003-10-08 | 安捷伦科技有限公司 | 用于带引线的集成电路的三维检测 |
CN1517798A (zh) * | 2003-01-14 | 2004-08-04 | Asml荷兰有限公司 | 用于光刻装置的水平传感器 |
CN1632462A (zh) * | 2004-12-28 | 2005-06-29 | 天津大学 | 基于角度测量的三角法测距误差补偿方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL9100410A (nl) * | 1991-03-07 | 1992-10-01 | Asm Lithography Bv | Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting. |
JP3204406B2 (ja) * | 1991-10-30 | 2001-09-04 | 株式会社ニコン | 面位置検出方法及び装置、半導体露光装置、並びに前記方法を用いた露光方法 |
JP3360321B2 (ja) | 1992-09-17 | 2002-12-24 | 株式会社ニコン | 面位置検出装置及び方法並びに露光装置及び方法 |
US5602399A (en) * | 1993-06-23 | 1997-02-11 | Nikon Corporation | Surface position detecting apparatus and method |
JPH07162065A (ja) | 1993-12-10 | 1995-06-23 | Mitsubishi Electric Corp | レーザ装置 |
JP3340824B2 (ja) | 1993-12-13 | 2002-11-05 | レーザーテック株式会社 | 全反射プリズムを含む光学系 |
KR100230237B1 (ko) | 1994-07-30 | 1999-11-15 | 윤종용 | 기록재생용 광픽업 |
JP3343795B2 (ja) * | 1994-09-15 | 2002-11-11 | 株式会社リコー | 偏光解析装置 |
JPH10221268A (ja) * | 1997-02-05 | 1998-08-21 | Advantest Corp | ウェーハの表面状態検出方法および装置 |
AU2076699A (en) | 1998-02-02 | 1999-08-16 | Nikon Corporation | Surface position sensor and position sensor |
TW490596B (en) * | 1999-03-08 | 2002-06-11 | Asm Lithography Bv | Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus |
JP2001296105A (ja) | 2000-04-12 | 2001-10-26 | Nikon Corp | 面位置検出装置、並びに該検出装置を用いた露光装置および露光方法 |
US6470109B1 (en) * | 2000-06-08 | 2002-10-22 | Agilent Technologies, Inc. | Determining waveguide positions and angles for efficient reflective coupling |
JP4343685B2 (ja) * | 2001-08-31 | 2009-10-14 | キヤノン株式会社 | レチクル及び光学特性計測方法 |
EP1439428A3 (en) | 2003-01-14 | 2009-05-13 | ASML Netherlands B.V. | Level sensor for lithographic apparatus |
JP2004304086A (ja) | 2003-04-01 | 2004-10-28 | Nikon Corp | 位置検出装置、位置検出方法、露光装置、および露光方法 |
US7593095B2 (en) | 2004-02-26 | 2009-09-22 | Carl Zeiss Smt Ag | System for reducing the coherence of laser radiation |
JP4617806B2 (ja) | 2004-09-28 | 2011-01-26 | 日産自動車株式会社 | 溶射前処理方法 |
KR101447407B1 (ko) | 2005-07-08 | 2014-10-06 | 가부시키가이샤 니콘 | 면 위치 검출 장치, 노광 장치 및 노광 방법 |
-
2006
- 2006-11-01 JP JP2006297486A patent/JP5622068B2/ja active Active
- 2006-11-08 TW TW95141268A patent/TWI417508B/zh active
- 2006-11-14 WO PCT/JP2006/322595 patent/WO2007058151A1/ja active Application Filing
- 2006-11-14 EP EP06823369A patent/EP1956339A4/en not_active Ceased
- 2006-11-14 CN CN201210150196.3A patent/CN102722093B/zh active Active
- 2006-11-14 KR KR1020087007783A patent/KR101436172B1/ko active IP Right Grant
- 2006-11-14 SG SG201101083-2A patent/SG169987A1/en unknown
- 2006-11-14 KR KR1020147008722A patent/KR101506851B1/ko active IP Right Grant
- 2006-11-14 US US12/093,713 patent/US8432554B2/en active Active
- 2006-11-14 CN CN2006800422628A patent/CN101305259B/zh active Active
- 2006-11-14 EP EP20120151076 patent/EP2466384A3/en not_active Withdrawn
-
2008
- 2008-12-17 HK HK08113650.6A patent/HK1122611A1/xx not_active IP Right Cessation
- 2008-12-17 HK HK13100305.5A patent/HK1173786A1/zh not_active IP Right Cessation
-
2013
- 2013-03-21 US US13/848,463 patent/US9594316B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0053730A1 (de) * | 1980-11-27 | 1982-06-16 | Webb Service GmbH | Schlüssel-Erkenner |
US4872747A (en) * | 1987-04-15 | 1989-10-10 | Cyberoptics Corporation | Use of prisms to obtain anamorphic magnification |
CN1448043A (zh) * | 2000-08-22 | 2003-10-08 | 安捷伦科技有限公司 | 用于带引线的集成电路的三维检测 |
CN1517798A (zh) * | 2003-01-14 | 2004-08-04 | Asml荷兰有限公司 | 用于光刻装置的水平传感器 |
CN1632462A (zh) * | 2004-12-28 | 2005-06-29 | 天津大学 | 基于角度测量的三角法测距误差补偿方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102722093A (zh) | 2012-10-10 |
HK1173786A1 (zh) | 2013-05-24 |
CN102722093B (zh) | 2016-01-27 |
KR101436172B1 (ko) | 2014-09-01 |
TW200720622A (en) | 2007-06-01 |
EP2466384A2 (en) | 2012-06-20 |
EP1956339A4 (en) | 2009-10-21 |
CN101305259A (zh) | 2008-11-12 |
TWI417508B (zh) | 2013-12-01 |
SG169987A1 (en) | 2011-04-29 |
EP1956339A1 (en) | 2008-08-13 |
US8432554B2 (en) | 2013-04-30 |
JP5622068B2 (ja) | 2014-11-12 |
HK1122611A1 (en) | 2009-05-22 |
US20130242304A1 (en) | 2013-09-19 |
EP2466384A3 (en) | 2012-09-05 |
KR20140054423A (ko) | 2014-05-08 |
KR101506851B1 (ko) | 2015-03-27 |
JP2007165859A (ja) | 2007-06-28 |
WO2007058151A1 (ja) | 2007-05-24 |
KR20080068008A (ko) | 2008-07-22 |
US20090116039A1 (en) | 2009-05-07 |
US9594316B2 (en) | 2017-03-14 |
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