CN101276747A - 制造高平度硅片的方法 - Google Patents

制造高平度硅片的方法 Download PDF

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Publication number
CN101276747A
CN101276747A CNA2007103083330A CN200710308333A CN101276747A CN 101276747 A CN101276747 A CN 101276747A CN A2007103083330 A CNA2007103083330 A CN A2007103083330A CN 200710308333 A CN200710308333 A CN 200710308333A CN 101276747 A CN101276747 A CN 101276747A
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CN
China
Prior art keywords
wafer
high flatness
silicon wafer
slight
manufacturing high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007103083330A
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English (en)
Chinese (zh)
Inventor
南炳旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Siltron Co Ltd
Original Assignee
Siltron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltron Inc filed Critical Siltron Inc
Publication of CN101276747A publication Critical patent/CN101276747A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
CNA2007103083330A 2006-12-29 2007-12-29 制造高平度硅片的方法 Pending CN101276747A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2006-0138487 2006-12-29
KR20060138487 2006-12-29
KR10-2007-0133510 2007-12-18

Publications (1)

Publication Number Publication Date
CN101276747A true CN101276747A (zh) 2008-10-01

Family

ID=39815094

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007103083330A Pending CN101276747A (zh) 2006-12-29 2007-12-29 制造高平度硅片的方法

Country Status (2)

Country Link
KR (1) KR20080063090A (ko)
CN (1) CN101276747A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054669A (zh) * 2009-11-02 2011-05-11 硅电子股份公司 加工硅晶片的方法
CN107331610A (zh) * 2016-04-28 2017-11-07 上海新昇半导体科技有限公司 提高硅晶片外延层表面平整度的方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101081652B1 (ko) * 2009-05-07 2011-11-09 주식회사 엘지실트론 저온 급속 열처리를 통해 ｂｍｄ농도를 제어하는 실리콘 웨이퍼 제조 방법
KR101064801B1 (ko) * 2010-10-18 2011-09-14 주식회사 엘지실트론 실리콘 웨이퍼의 결정결함 평가방법
KR101525614B1 (ko) * 2013-03-27 2015-06-04 한솔테크닉스(주) 기판 제조방법
CN108714978B (zh) * 2018-07-05 2024-01-09 青岛高测科技股份有限公司 一种晶硅切棱磨倒一体机
KR102533868B1 (ko) * 2021-05-25 2023-05-26 이기정 웨이퍼 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054669A (zh) * 2009-11-02 2011-05-11 硅电子股份公司 加工硅晶片的方法
CN102054669B (zh) * 2009-11-02 2016-03-23 硅电子股份公司 加工硅晶片的方法
CN107331610A (zh) * 2016-04-28 2017-11-07 上海新昇半导体科技有限公司 提高硅晶片外延层表面平整度的方法

Also Published As

Publication number Publication date
KR20080063090A (ko) 2008-07-03

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20081001