CN101275994A - Method for monitoring probe card state - Google Patents
Method for monitoring probe card state Download PDFInfo
- Publication number
- CN101275994A CN101275994A CN 200710021077 CN200710021077A CN101275994A CN 101275994 A CN101275994 A CN 101275994A CN 200710021077 CN200710021077 CN 200710021077 CN 200710021077 A CN200710021077 A CN 200710021077A CN 101275994 A CN101275994 A CN 101275994A
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- resistance
- probe card
- metal gasket
- metal
- monitoring
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Abstract
The present invention provides a method for monitoring the state of the probe card. The method comprises the following procedures: (1) firstly, arranging resistor arrays with same resistance between each metal pads of the test key, wherein the leftmost metal pad and the rightmost resistor are connected through two metal wires surrounding the test key; (2) measuring the resistance between the metal pad I and the metal pad II; (3) determining whether the measured resistance is a normal value, continuing to measure the resistance between the metal pad II and the metal pad III if the resistance is a normal value; and alarming if the resistance is not a normal value, the generation of additional resistor is monitored or the resistance is zero, the using of the probe card can be stopped immediately, the proper test is executed for ensuring the accurate and reliable operation of the subsequent semiconductor test; (4) repeating the above procedures until when all the resistance measured between adjacent metal pads are normal values to indicate that the probe card is all right; and (5) executing normal semiconductor electric property measurement. The invention adopts a novel test key pattern. Through the real-time probe measuring to the probe card, the quick monitoring to the state of the probe card is realized thereby securing that the electric property monitoring is accurate and reliable.
Description
Technical field
The present invention relates to a kind of monitoring method, relate in particular to the method for monitoring probe card state in the electrical measurement of manufacture of semiconductor.
Background technology
In manufacture of semiconductor, the normal use electrically measured WAT (Wafer Acceptance Testing), reflects problem on the production line by the electrical parameter of measuring the feeler switch (Testkey) on wafer (wafer) Cutting Road.Its mode be desire measures on wafer chip (Chip or Die) on every side, a plurality of feeler switchs are provided, these feeler switchs are formed on the Cutting Road (Scribe Line) between the chip, connect external module, intraware and test suite with metal pad (Pad).Then, select the feeler switch of a module (Module), to measure different wafer characteristics, critical voltage V for example
TH(Threshold Voltage) or saturation current I
DSAT(Saturate Current) etc.
Electrically measuring is an important monitoring step, adopts probe (Probe Card) to prick on the metal Pad of feeler switch and measures.Yet along with the increase that the probe pin is surveyed number of times, needle point can wear and tear, oxidation or pickup, and the contact resistance increase of needle point and Pad will influence the accuracy of electrical measurement.Simultaneously, the skew if the position that the probe needle point is pricked meets accident will cause the short circuit of chip (Chip) interior metal lead, greatly the accuracy of influence measurement.If probe has unusually, when pin trace pickup or pin trace Pad deflect away from, cause test unusual, prick bad wafer; Check wafer and probe, and select normal probe to resurvey, waste of manpower and time.
State when therefore, how surveillance probes card pin is surveyed, guarantee test accurately and reliably, be the important topic of Measurement of Semiconductors.At present industry does not still have and monitors means fast and effectively.
Summary of the invention
The purpose of this invention is to provide the method for monitoring probe card state in the electrical measurement of a kind of manufacture of semiconductor, adopt new feeler switch figure,, realize quick surveillance probes card state, guarantee that electrically monitoring accurately and reliably by the real-time pin of probe is surveyed.
Purpose of the present invention is achieved through the following technical solutions:
The method of monitoring probe card state is characterized in that may further comprise the steps---
1. the identical electric resistance array of resistance at first is set between each metal gasket of feeler switch, and leftmost metal gasket links to each other by two metal line around feeler switch with rightmost resistance;
2. survey the resistance between metal gasket I and the metal gasket II;
3. judge whether the resistance that measures is normal value: if then continue to survey the resistance between metal gasket II and the metal gasket III; If not, then report to the police, show to monitor that additional resistance produces or resistance is zero, can stop the use of probe immediately, do suitably to check, guarantee carrying out accurately and reliably of follow-up semiconductor test;
4. repeating the resistance that above step measures between all adjacent metal pads is normal value all, shows that probe is without any problem;
5. carrying out normal semiconductor electrically measures.
Further, the method for above-mentioned monitoring probe card state, the material of described metal gasket are aluminium or copper.
Further, the method for above-mentioned monitoring probe card state, the quantity of metal gasket is identical with number of probes on the feeler switch.
The outstanding substantive distinguishing features and the obvious improvement of technical solution of the present invention is mainly reflected in:
The present invention adopts new feeler switch figure, by the real-time pin of probe is surveyed, realizes quick surveillance probes card state, when pin trace pickup, can produce additional contact resistance or opens circuit, and the board message notice that gives a warning is checked; When the pin trace deflects away from metal gasket, with top metal line bridging, the board message notice inspection that gives a warning; Thereby guarantee that electrically monitoring accurately and reliably.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1: the structural representation of feeler switch of the present invention;
Fig. 2: monitoring state synoptic diagram of the present invention;
The implication of each Reference numeral is among the figure: 1-metal wire, 2-metal gasket, 3-resistance.
Embodiment
The present invention is provided with the identical electric resistance array of resistance between each metal gasket of existing feeler switch, judge by the resistance that measures between adjacent two metal gaskets whether each needle point has contact resistance to produce.Simultaneously, leftmost metal gasket and rightmost resistance link to each other by two metal line around feeler switch, in case tip position deflects away from metal gasket, the general at first with metal line bridging, resistance between each metal gasket that measure this moment will be zero, get final product the state of effective monitoring probe card.Additional resistance produces or resistance is zero when monitoring, and can stop the use of probe immediately, does suitably to check, guarantees carrying out accurately and reliably of follow-up semiconductor test.Test key structure is provided with the identical resistance of resistance 3 between each metal gasket 2 of feeler switch as shown in Figure 1, and leftmost metal gasket links to each other by two metal line 1 around feeler switch with rightmost resistance.
Before normal electrically measurement (WAT) begins to test, probe card is contacted on the feeler switch of the present invention's design earlier, same resistance (R) is connected on each metal gasket, carries out the test of pin trace pickup; Metal wire carries out the pin trace and deflects away from the metal gasket test around feeler switch.Behind the probe contact feeler switch, carry out each resistance test with program in addition; Monitoring state synoptic diagram shown in Figure 2.
Concrete steps are---
1. the identical electric resistance array of resistance at first is set between each metal gasket of feeler switch, and leftmost metal gasket links to each other by two metal line around feeler switch with rightmost resistance;
2. survey the resistance between metal gasket I and the metal gasket II;
3. judge whether the resistance that measures is normal value: if then continue to survey the resistance between metal gasket II and the metal gasket III; If not, then report to the police, show to monitor that additional resistance produces or resistance is zero, can stop the use of probe immediately, do suitably to check, guarantee carrying out accurately and reliably of follow-up semiconductor test;
4. repeating the resistance that above step measures between all adjacent metal pads is normal value all, shows that probe is without any problem;
5. carrying out normal semiconductor electrically measures.
During concrete the use, when pin trace pickup, can produce additional contact resistance or open circuit, the board message notice that gives a warning is checked.When the pin trace deflects away from metal gasket, with top metal line bridging, the board message notice inspection that gives a warning, thus guarantee that electrically monitoring is accurately and reliably.
Below only be concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.
Claims (3)
1. the method for monitoring probe card state is characterized in that may further comprise the steps---
1. the identical electric resistance array of resistance at first is set between each metal gasket of feeler switch, and leftmost metal gasket links to each other by two metal line around feeler switch with rightmost resistance;
2. survey the resistance between metal gasket I and the metal gasket II;
3. judge whether the resistance that measures is normal value: if then continue to survey the resistance between metal gasket II and the metal gasket III; If not, then report to the police, show to monitor that additional resistance produces or resistance is zero, can stop the use of probe immediately, do suitably to check, guarantee carrying out accurately and reliably of follow-up semiconductor test;
4. repeating the resistance that above step measures between all adjacent metal pads is normal value all, shows that probe is without any problem;
5. carrying out normal semiconductor electrically measures.
2. the method for monitoring probe card state according to claim 1, it is characterized in that: the material of described metal gasket is aluminium or copper.
3. the method for monitoring probe card state according to claim 1, it is characterized in that: the quantity of metal gasket is identical with number of probes on the feeler switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710021077 CN101275994B (en) | 2007-03-27 | 2007-03-27 | Method for monitoring probe card state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710021077 CN101275994B (en) | 2007-03-27 | 2007-03-27 | Method for monitoring probe card state |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101275994A true CN101275994A (en) | 2008-10-01 |
| CN101275994B CN101275994B (en) | 2010-08-04 |
Family
ID=39995614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710021077 Expired - Fee Related CN101275994B (en) | 2007-03-27 | 2007-03-27 | Method for monitoring probe card state |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101275994B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872002A (en) * | 2010-05-28 | 2010-10-27 | 上海宏力半导体制造有限公司 | Probe detection device and method thereof |
| CN102339816A (en) * | 2011-09-30 | 2012-02-01 | 上海宏力半导体制造有限公司 | Wafer test key structure and wafer test method |
| CN103257274A (en) * | 2013-05-23 | 2013-08-21 | 上海华力微电子有限公司 | Method for preventing probe burning through distinguishing type of probe card |
| CN103293503A (en) * | 2013-05-24 | 2013-09-11 | 上海宏力半导体制造有限公司 | Probe card detecting method |
| CN104931543A (en) * | 2015-06-29 | 2015-09-23 | 上海华力微电子有限公司 | Probe-card probe cleaning method and probe cleaning system |
| CN103257274B (en) * | 2013-05-23 | 2016-11-30 | 上海华力微电子有限公司 | A kind of method by identifying probe card type prevention acupuncture with heated needle |
| CN106449461A (en) * | 2016-11-07 | 2017-02-22 | 南京华东电子信息科技股份有限公司 | Method of connection test for array test block on TFT substrate |
| CN110501539A (en) * | 2019-08-23 | 2019-11-26 | 杰西·吕 | Equipment and its application method for probe card manufacture, detection and maintenance |
| CN113391181A (en) * | 2021-05-24 | 2021-09-14 | 长江存储科技有限责任公司 | Equipment, wafer structure and method for detecting state of wafer test probe card |
| CN113506755A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Checking graph structure for automatically detecting test channel and test method |
| CN113671339A (en) * | 2021-09-22 | 2021-11-19 | 广州粤芯半导体技术有限公司 | Apparatus and method for verifying probe abnormality and contact abnormality and wafer testing method |
| CN117405954A (en) * | 2023-12-14 | 2024-01-16 | 北京智芯微电子科技有限公司 | Method for removing oxide layer of probe card, cleaning and testing system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050185769A1 (en) * | 2004-02-25 | 2005-08-25 | Pickerd John J. | Calibration method and apparatus |
-
2007
- 2007-03-27 CN CN 200710021077 patent/CN101275994B/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101872002A (en) * | 2010-05-28 | 2010-10-27 | 上海宏力半导体制造有限公司 | Probe detection device and method thereof |
| CN102339816A (en) * | 2011-09-30 | 2012-02-01 | 上海宏力半导体制造有限公司 | Wafer test key structure and wafer test method |
| CN103257274A (en) * | 2013-05-23 | 2013-08-21 | 上海华力微电子有限公司 | Method for preventing probe burning through distinguishing type of probe card |
| CN103257274B (en) * | 2013-05-23 | 2016-11-30 | 上海华力微电子有限公司 | A kind of method by identifying probe card type prevention acupuncture with heated needle |
| CN103293503A (en) * | 2013-05-24 | 2013-09-11 | 上海宏力半导体制造有限公司 | Probe card detecting method |
| CN103293503B (en) * | 2013-05-24 | 2017-02-08 | 上海华虹宏力半导体制造有限公司 | Probe card detecting method |
| CN104931543A (en) * | 2015-06-29 | 2015-09-23 | 上海华力微电子有限公司 | Probe-card probe cleaning method and probe cleaning system |
| CN106449461B (en) * | 2016-11-07 | 2020-05-05 | 南京华东电子信息科技股份有限公司 | Connection test method for array inspection test block on TFT substrate |
| CN106449461A (en) * | 2016-11-07 | 2017-02-22 | 南京华东电子信息科技股份有限公司 | Method of connection test for array test block on TFT substrate |
| CN110501539A (en) * | 2019-08-23 | 2019-11-26 | 杰西·吕 | Equipment and its application method for probe card manufacture, detection and maintenance |
| CN113391181A (en) * | 2021-05-24 | 2021-09-14 | 长江存储科技有限责任公司 | Equipment, wafer structure and method for detecting state of wafer test probe card |
| CN113506755A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Checking graph structure for automatically detecting test channel and test method |
| CN113671339A (en) * | 2021-09-22 | 2021-11-19 | 广州粤芯半导体技术有限公司 | Apparatus and method for verifying probe abnormality and contact abnormality and wafer testing method |
| CN113671339B (en) * | 2021-09-22 | 2024-02-09 | 粤芯半导体技术股份有限公司 | Device and method for verifying probe abnormality and contact abnormality and wafer test method |
| CN117405954A (en) * | 2023-12-14 | 2024-01-16 | 北京智芯微电子科技有限公司 | Method for removing oxide layer of probe card, cleaning and testing system |
| CN117405954B (en) * | 2023-12-14 | 2024-04-16 | 北京智芯微电子科技有限公司 | Method for removing oxide layer of probe card, cleaning and testing system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101275994B (en) | 2010-08-04 |
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