CN101273302A - Photomask and exposure method using same - Google Patents
Photomask and exposure method using same Download PDFInfo
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- CN101273302A CN101273302A CNA200680035418XA CN200680035418A CN101273302A CN 101273302 A CN101273302 A CN 101273302A CN A200680035418X A CNA200680035418X A CN A200680035418XA CN 200680035418 A CN200680035418 A CN 200680035418A CN 101273302 A CN101273302 A CN 101273302A
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- photomask
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- viewport
- alignment mark
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optical Filters (AREA)
Abstract
A photomask (1) is composed of a transparent base material (2) and a light shielding film (3) formed on one plane of the transparent base material (2). The photomask is provided with a plurality of mask patterns (4) which are arranged in one direction on the light shielding film (2) and permit exposure light to pass through, and an inspection window (5), which is formed on a side in an arrangement direction of the mask patterns (4) on the light shielding film (3), to permit the surface of a color filter substrate arranged to face the photomask to be observed. Thus, superposition accuracy of an exposure pattern to a reference pattern of a substrate whereupon a photosensitive resin is applied is improved.
Description
Technical field
The picture back that the present invention relates to copy mask pattern on the substrate that has applied photoresist forms the photomask of exposing patterns, described mask pattern is arranged on the photomask on the face that is formed at the transparent base material, in more detail, relate to the photomask and the exposure method that uses this photomask that can improve exposing patterns with respect to the registration accuracy that is pre-formed the reference pattern on substrate.
Background technology
Existing photomask has mask pattern and alignment mark, described mask pattern is replicated on the substrate that has applied photoresist, the straight line portion of its pattern forms very shortly, and described alignment mark is used for carrying out the contraposition (for example, with reference to patent documentation 1) with substrate on the position of regulation.Then, the contraposition of the alignment mark of above-mentioned alignment mark and substrate was carried out in the exposure of using such photomask to carry out before the exposure beginning, afterwards, in comprising the regulation zone of substrate, in the face of the face that is parallel to substrate, relatively move or stop above-mentioned photomask and be used for to two direction of principal axis by the light irradiation device of photomask to aforesaid substrate irradiation exposure light, in photomask relatively moves with respect to aforesaid substrate or stop time irradiation exposure light, on substrate, form the exposing patterns that rectilinear form extends.Like this, even small-sized photomask also can be efficiently forms the exposing patterns of rectilinear form on substrate.
Patent documentation 1:JP spy opens flat 11-237744 communique
Summary of the invention
Invent problem to be solved
But, in so existing photomask, utilize the alignment mark of photomask and the alignment mark of substrate, carry out mask pattern indirectly and be pre-formed the contraposition of the reference pattern on substrate, can not when observation is formed on reference pattern on the substrate, come the contraposition mask pattern with respect to this reference pattern.Thereby, by the precision that forms between the mask pattern of photomask and the reference pattern that forms precision and substrate between its alignment mark and its alignment mark, determined the registration accuracy of the reference pattern of exposing patterns and substrate, form under the inadequate situation of precision at this, above-mentioned registration accuracy is variation also.Special is under the situation of large substrate at substrate, and the formation precision between above-mentioned each alignment mark and each pattern is stricter, and its contraposition is more difficult.
In addition, above-mentioned existing photomask has carried out the contraposition of the alignment mark of the alignment mark of photomask and substrate before exposure beginning, therefore, can not carry out the contraposition of two alignment marks in exposure is carried out.Thereby if the contraposition before the exposure beginning is insufficient, the aligning accuracy of exposing patterns and reference pattern also can variation.In addition, therefore the offset owing to displacement error that can not the modifying factor substrate produces, can not improve above-mentioned aligning accuracy.
Therefore, the present invention is directed to such problem points, purpose is to provide a kind of and can improves exposing patterns with respect to the photomask of the registration accuracy that is pre-formed the reference pattern on the substrate that has applied photoresist and use the exposure method of this photomask.
The method that is used to deal with problems
In order to achieve the above object, first photomask that relate to of invention is made of transparent base material and the photomask that is formed on the face of this transparent base material, this photomask has: a plurality of mask patterns, unidirectional array are formed on the above-mentioned photomask, and exposure light is seen through; Viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observes opposed substrate surface by this viewport.
According to such structure, being formed on the photomask of above-mentioned a plurality of mask pattern unidirectional array, described photomask is formed on the face of transparent base material, the viewport of one side of the orientation by being formed on a plurality of mask patterns is observed the surface of opposed substrate, and sees through above-mentioned a plurality of mask patterns and shine exposure light to substrate.
In addition, at least one face of above-mentioned transparent base material, cover above-mentioned viewport and be formed with visible light transmissive and reflection or absorb ultraviolet wavelength selectivity film.Like this, at least one face of transparent base material, with the wavelength selectivity film visible light transmissive that covers viewport formation, and reflection or absorption ultraviolet ray.
In addition, second photomask that relate to of invention is made of transparent base material and the photomask that is formed on the face of this transparent base material, this photomask has: a plurality of mask patterns, unidirectional array are formed on the above-mentioned photomask, and exposure light is seen through; Viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observes opposed substrate surface by this viewport; Mask side alignment mark is formed in the above-mentioned viewport or the side end outside of viewport, and with above-mentioned a plurality of mask patterns at least one have the position relation of regulation, and be used for the contraposition with aforesaid substrate.
According to such structure, above-mentioned a plurality of mask pattern unidirectional array is formed on the photomask, described photomask is formed on the face of transparent base material, the viewport of one side of the orientation by being formed on a plurality of mask patterns is observed the surface of opposed substrate, with being formed in the above-mentioned viewport or a side end of the viewport outside, and with above-mentioned a plurality of mask patterns at least one have the mask side alignment mark of the position relation of regulation, carry out the contraposition with substrate, and see through above-mentioned a plurality of mask patterns and shine exposure light to substrate.
In addition, at least one face of above-mentioned transparent base material, cover above-mentioned viewport and mask side alignment mark and be formed with visible light transmissive and reflection or absorb ultraviolet wavelength selectivity film.Like this, at least one face of transparent base material, with the wavelength selectivity film visible light transmissive that covers the formation of viewport and mask side alignment mark, and reflection or absorption ultraviolet ray.
In addition, the 3rd invention relates to a kind of exposure method, the photomask that use is provided with a plurality of mask patterns and viewport exposes, wherein, described a plurality of mask pattern unidirectional array is formed on the photomask, and exposure light is seen through, described photomask is formed on the face of transparent base material, described viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observe opposed substrate surface by this viewport, above-mentioned exposure method is characterised in that, comprising: so that above-mentioned viewport is positioned at the mode of the forward side on the conveyance direction of substrate, dispose the step of above-mentioned photomask; On the direction that the orientation with above-mentioned a plurality of mask patterns intersects, conveyance is coated with the step of the substrate of photoresist; Utilize filming apparatus to pass through above-mentioned viewport and take the aforesaid substrate surface, detect the step of the reference position of setting with the assigned position relation with respect to the reference pattern that is formed on this substrate with this; On the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, horizontal range between in the reference position of the feasible aforesaid substrate that is detected and a plurality of mask patterns of above-mentioned photomask any becomes setting, aforesaid substrate and photomask is carried out the step of contraposition with this.
According to such structure,, dispose above-mentioned photomask so that above-mentioned viewport is positioned at the mode of the forward side on the conveyance direction of substrate; On the direction that the orientation with above-mentioned a plurality of mask patterns intersects, conveyance is coated with the substrate of photoresist; Utilize filming apparatus to pass through above-mentioned viewport and take the aforesaid substrate surface, detect the reference position of setting with the assigned position relation with respect to the reference pattern that is formed on this substrate with this; On the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, horizontal range between in the reference position of the feasible aforesaid substrate that is detected and a plurality of mask patterns of above-mentioned photomask any becomes setting, with this aforesaid substrate and photomask is carried out contraposition.
In addition, the 4th invention relates to a kind of exposure method, use is provided with a plurality of mask patterns, the photomask of viewport and mask side alignment mark exposes, wherein, described a plurality of mask pattern unidirectional array is formed on the photomask, and exposure light is seen through, described photomask is formed on the face of transparent base material, described viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observe opposed substrate surface by this viewport, described mask side alignment mark is formed in the above-mentioned viewport or a side end of the viewport outside, and with above-mentioned a plurality of mask patterns at least one have the position relation of regulation, and be used for contraposition with aforesaid substrate, above-mentioned exposure method comprises: so that above-mentioned viewport is positioned at the mode of the forward side on the conveyance direction of substrate, dispose the step of above-mentioned photomask; On the direction that the orientation with above-mentioned a plurality of mask patterns intersects, conveyance is coated with the step of the substrate of photoresist; Utilize filming apparatus to pass through above-mentioned viewport and take the aforesaid substrate surface, detect the step of the reference position of setting with the assigned position relation with respect to the reference pattern that is formed on this substrate with this; Utilize above-mentioned filming apparatus to take the mask side alignment mark of above-mentioned photomask, detect the step of its position with this; On the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, horizontal range between the reference position of the feasible aforesaid substrate that is detected and the mask side alignment mark of above-mentioned photomask becomes setting, aforesaid substrate and photomask is carried out the step of contraposition with this.
According to such structure,, dispose above-mentioned photomask so that above-mentioned viewport is positioned at the mode of the forward side on the conveyance direction of substrate; On the direction that the orientation with above-mentioned a plurality of mask patterns intersects, conveyance is coated with the substrate of photoresist; Utilize filming apparatus to pass through above-mentioned viewport and take the aforesaid substrate surface, detect the reference position of setting with the assigned position relation with respect to the reference pattern that is formed on this substrate with this; Utilize above-mentioned filming apparatus to take the mask side alignment mark of above-mentioned photomask, detect its position with this; On the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, horizontal range between the reference position of the feasible aforesaid substrate that is detected and the mask side alignment mark of above-mentioned photomask becomes setting, aforesaid substrate and photomask is carried out the step of contraposition with this.
In addition, carry out the step of the reference position of detecting aforesaid substrate and the step of the position of the mask side alignment mark that detects above-mentioned photomask simultaneously.So detect the position of the mask side alignment mark of the reference position of substrate and photomask simultaneously.
In addition, aforesaid substrate is formed with the substrate-side alignment mark that is used for carrying out with the mask side alignment mark of above-mentioned photomask contraposition at the one side end, and makes this substrate-side alignment mark and said reference pattern have the position relation of regulation.Make the side end be formed on substrate and have the substrate-side alignment mark of position relation of regulation with reference pattern and the mask side alignment mark of photomask aligns like this.
In addition, so that be formed with the mode conveyance aforesaid substrate that the end of aforesaid substrate side alignment mark becomes conveyance direction the place ahead.Make like this and formed the end of substrate-side alignment mark at the conveyance substrate that comes.
Then, on the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, make the horizontal range between the position of mask side alignment mark of the position of aforesaid substrate side alignment mark and above-mentioned photomask become setting, with the contraposition between this substrate of this coarse adjustment and the photomask, mobile then aforesaid substrate, make the horizontal range between the position of the reference position of aforesaid substrate and mask side alignment mark become setting, this substrate and photomask are carried out contraposition with this.Like this, mobile photomask on the direction of intersecting with the conveyance direction of substrate, make the horizontal range between the position of mask side alignment mark of the position of substrate-side alignment mark and photomask become setting, with the contraposition between this substrate of this coarse adjustment and the photomask, moving substrate then, make the horizontal range between the position of the reference position of substrate and mask side alignment mark become setting, this substrate and photomask are carried out contraposition with this.
The invention effect
According to first invention, can be near the position of a plurality of mask patterns, be pre-formed reference pattern on substrate by the viewport Direct observation.Thereby, revise after can detecting the skew of the reference position that is set in advance on the said reference pattern and above-mentioned a plurality of mask patterns by above-mentioned viewport, make this side-play amount become the value of regulation, can carry out the contraposition of the reference pattern of above-mentioned a plurality of mask pattern and substrate.Like this, can improve the aligning accuracy of two patterns.Especially according to the present invention, because the side in the orientation of a plurality of mask patterns has formed viewport, therefore, as long as it is opposed with aforesaid substrate, make above-mentioned viewport be positioned at a forward side on the conveyance direction of substrate, even in the exposure of in prescribed direction conveyance substrate, carrying out, also can observe the reference pattern of substrate by above-mentioned viewport, carry out the contraposition of the reference pattern of mask pattern and substrate.Thereby, can revise the displacement error of substrate, utilize the aforementioned mask pattern to improve the registration accuracy of the reference pattern of exposing patterns and aforesaid substrate.
In addition, according to second invention, can prevent that ultraviolet ray is by the viewport irradiated substrate.Thereby, can prevent that above-mentioned viewport and exposing patterns are exposed on substrate after overlapping.
In addition, according to the 3rd the invention, with above-mentioned first the invention similarly, can improve the registration accuracy of the reference pattern of exposing patterns and substrate.Special owing in viewport or outside the side end of viewport, be formed with mask side alignment mark, therefore, as long as the conveyance direction leading section at substrate forms the substrate-side alignment mark, just can carry out the coarse adjustment of the contraposition of substrate and photomask based on by observed substrate-side alignment mark of above-mentioned viewport and aforementioned mask side alignment mark.Thereby, can further improve the registration accuracy of the reference pattern of exposing patterns and substrate.
And,, can prevent that above-mentioned viewport and mask side alignment mark and exposing patterns are exposed on substrate after overlapping according to the 4th invention.
In addition,,, also can observe the reference pattern of substrate, carry out the contraposition of the reference pattern of mask pattern and substrate by above-mentioned viewport even in the exposure of in prescribed direction conveyance substrate, carrying out according to the 5th invention.Thereby, can revise the displacement error of substrate, utilize the aforementioned mask pattern to improve the registration accuracy of the reference pattern of exposing patterns and aforesaid substrate.
In addition, according to the 6th invention, can carry out the contraposition of substrate and photomask based on mask side alignment mark.Thereby, can further utilize mask pattern to improve the registration accuracy of the reference pattern of exposing patterns and substrate.
In addition, according to the 7th invention, can improve registration process speed.
In addition, according to the 8th～the tenth invention, can before the contraposition of the reference pattern of mask pattern that carries out photomask and substrate, carry out the coarse adjustment of photomask and substrate, can further utilize mask pattern to improve the registration accuracy of the reference pattern of exposing patterns and substrate.
Description of drawings
Fig. 1 is the vertical view that the embodiment of the photomask that the present invention relates to is shown.
Fig. 2 is the X-X line sectional view of Fig. 1.
Fig. 3 is the Y-Y line sectional view of Fig. 1.
Fig. 4 is the vertical view of a structure example that the color filter substrate of above-mentioned relatively photomask conveyance is shown.
Fig. 5 is the figure of the contraposition of above-mentioned photomask of explanation and color filter substrate, is the key diagram that the state before adjusting is shown.
Fig. 6 is the figure of the contraposition of above-mentioned photomask of explanation and color filter substrate, is the key diagram that adjusted state is shown.
Fig. 7 is the figure of the contraposition of above-mentioned photomask of explanation and color filter substrate, is the key diagram that the executory inching of exposure is shown.
The explanation of Reference numeral
1 ... photomask
2 ... the transparent base material
2a ... a face
2b ... another face
3 ... photomask
4 ... mask pattern
5 ... viewport
6 ... color filter substrate (substrate)
8 ... pixel (reference pattern)
10 ... antireflection film
11 ... the substrate-side alignment mark
12 ... mask side alignment mark
14 ... the wavelength selectivity film
S1 ... the reference position of photomask
S2 ... the reference position of color filter substrate
Embodiment
Below, explain embodiments of the present invention based on accompanying drawing.Fig. 1 is the vertical view that the embodiment of the photomask that the present invention relates to is shown, and Fig. 2 is the X-X line sectional view of Fig. 1, and Fig. 3 is the Y-Y line sectional view of Fig. 1.Even this photomask 1 is in the exposure process that carries out in the prescribed direction moving substrate, also can carry out the contraposition of the reference pattern of mask pattern and substrate, it is made of transparent base material 2, photomask 3, mask pattern 4, viewport 5 and mask side alignment mark 12.Below be that the situation of color filter substrate describes about aforesaid substrate.
Above-mentioned transparent base material 2 is transparent glass basis materials of high-level efficiency transmitting UV and visible light, for example is made of quartz glass.
Shown in Fig. 2 or 3, on a face 2a of above-mentioned transparent base material 2, be formed with photomask 3.This photomask 3 covers exposure light, and its film by opaque for example chromium (Cr) forms.
As shown in Figure 1, on above-mentioned photomask 3, be formed with a plurality of mask patterns 4 of unidirectional array.These a plurality of mask patterns 4 are the regulation shaped aperture by exposure light, can be the patterns that are replicated on the pixel 8 that is formed on the black matrix" 7 on the color filter substrate 6 as reference pattern to the 6 irradiation exposure lights of the color filter substrate shown in Fig. 4 of relative conveyance.Then, form such rectangular shape, that is, this rectangle for example has and the roughly consistent width of the width of above-mentioned pixel 8, and its major axis is orthogonal to above-mentioned orientation, forms according to the interval consistent with 3 intervals of above-mentioned pixel 8.In addition, as shown in Figure 1, the left end edge portion that preestablishes the mask pattern 4a that for example is positioned at central portion is as reference position S1.
In addition, as shown in Figure 2, at another face 2b of transparent base material 2, form antiultraviolet reflectance coating 10 at corresponding regional 9 (with reference to Fig. 1) in formation zone, thereby improve the efficiency of transmission of the ultraviolet composition that comprises in the exposure light with aforementioned mask pattern 4.
On above-mentioned photomask 3, near the position of above-mentioned a plurality of mask patterns 4, be formed with viewport 5 in a side of its orientation.This viewport 5 can be observed the surface of the color filter substrate 6 shown in Fig. 4 of relative conveyance, with diagram abridged filming apparatus, can detect the position and the reference position S2 of aforesaid substrate side alignment mark 11, described reference position S2 is set in advance in the upper left corner of the pixel 8a that is positioned at central portion as shown in Figure 4 of black matrix" 7.Then, as shown in Figure 1, be parallel to the orientation of above-mentioned a plurality of mask pattern 4, extend to form from mediad one side end 2c and be rectangle.
On above-mentioned photomask 3, the side end outside at above-mentioned viewport 5 is formed with a plurality of mask side alignment marks 12 from mediad end side 2d arrangement.These a plurality of mask side alignment marks 12 are used to be set in advance in the reference position S1 on the aforementioned mask pattern 4 and are set in advance in the contraposition as the reference position S2 on the pixel 8 of reference pattern of above-mentioned color filter substrate 6, with above-mentioned a plurality of mask pattern 4 corresponding formation.In addition, it is consistent with the left border portion of corresponding mask pattern 4 that this formation position makes the left border portion of mask side alignment mark 12 in Fig. 1.And the mask side alignment mark 12 that has for example preestablished the middle body that is formed on photomask 3 is as reference mark 12a.Like this, adjust, make the substrate-side alignment mark 11 of said reference mark 12a and above-mentioned color filter substrate 6 become the position relation of regulation, thereby the reference position S1 of aforementioned mask pattern 4 and the S2 position, reference position of color filter substrate 6 are overlapped by the position.In addition, also can form one with above-mentioned a plurality of mask patterns 4 in the aforementioned mask side alignment mark 12 of for example said reference mark 12a with position relation of regulation.In addition, the reference position S2 of above-mentioned color filter substrate 6 is not limited to be formed on the pixel 8, needs only the position relation that has regulation with respect to pixel 8, then can be set in any place.
In addition; as shown in Figure 3; on another face 2b of transparent base material 2; with corresponding regional 13 (with reference to the Fig. 1) in the formation of above-mentioned viewport 5 and mask side alignment mark 12 zone; form visible light transmissive and reflection or absorb ultraviolet wavelength selectivity film 14; the ultraviolet composition that comprises in the exposure light is radiated on the color filter substrate 6 by above-mentioned viewport 5 and mask side alignment mark 12, can prevent to be coated in the colored diaphragm exposure on the color filter substrate 6.
Below, the exposure method that the photomask 1 that constitutes as mentioned above about use carries out describes.
At this, the color filter substrate 6 of use forms the opaque coating that is made of Cr etc. as shown in Figure 4 on a face of transparent glass substrate, as shown in the drawing, the rectangular a plurality of pixels 8 of formation exposure area 15 in.In addition, aim at being set in advance in the offset of the reference position S2 on the above-mentioned color filter substrate 6 in order to revise the reference position S1 that is set in advance on the above-mentioned photomask 1, the substantial middle of a side end 15a of 15 has formed a longilineal substrate-side alignment mark 11 in the exposure area, and this alignment mark and above-mentioned pixel 8 have the position relation of regulation.In addition, in a side of aforesaid substrate side alignment mark 11, according to the consistent interval of intervals of arranging 3 pixels 8, arrange from mediad one side end 6a and to form a plurality of alignings affirmation marks 16 corresponding with pixel 8.In addition, form aforesaid substrate side alignment mark 11 and aim to confirm mark 16 like this: make the left border portion of their each marks in Fig. 4 and the left border portion of corresponding pixel 8 distinguish consistent.
On the other hand, make a side end 2e who has formed viewport 5 on the photomask 1 be arranged in Fig. 1, make to have formed facing down of photomask 3 with the forward side on the conveyance direction shown in the arrow A, with the upper surface of the color filter substrate 6 of conveyance near and opposed.
Under such state, utilize diagram abridged filming apparatus, by being formed on the viewport 5 on the photomask 1, substrate-side alignment mark 11, the aligning taken on the color filter substrate 6 are confirmed mark 16 and pixel 8.At this, above-mentioned filming apparatus is the line array CCD with a plurality of photo detectors, and these photo detectors are the straight line shape and are arranged on the direction that is orthogonal to the conveyance direction in the face that is parallel to color filter substrate 6.
Under this situation, at first as shown in Figure 5, take the substrate-side alignment mark 11 of color filter substrate 6 and the mask side alignment mark 12 of photomask 1 simultaneously.At this moment, read the filming apparatus that detects substrate-side alignment mark 11 photo detector unit number and detect the unit number of photo detector of filming apparatus of the reference mark 12a of above-mentioned photomask 1, in the operational part of diagram abridged, calculate its distance L.Then, with the predetermined distance L that preestablishes storage
0Compare.
At this, as shown in Figure 5, take place to the arrow B direction under the situation of skew with respect to color filter substrate 6 at photomask 1, as shown in Figure 6, photomask 1 moves to the arrow C direction, makes substrate-side alignment mark 11 and the distance L of reference mark 12a become L
0Or L
0± x (x is an allowable value).Like this, the reference position S2 of the reference position S1 of photomask 1 and color filter substrate 6 becomes consistent in the permissible range of regulation.
Then, as shown in Figure 6, utilize filming apparatus, take the aligning affirmation mark 16 of color filter substrate 6 and the mask side alignment mark 12 of photomask 1 simultaneously by the viewport 5 of photomask 1.Then, read the unit number that detects each unit number of aiming at the photo detector of confirming mark 16 and the photo detector of each the mask side alignment mark 12 that detects photomask 1, in operational part, calculate the mean value of each unit number.The unit number of this mean value with the photo detector of the filming apparatus of the substrate-side alignment mark 11 that detects above-mentioned color filter substrate 6 after aiming at adjustment compared, under both situations consistent in the permissible range of regulation, be judged as reliable alignment, and then to photomask 1 irradiation exposure light.Like this, on the pixel 8 of color filter substrate 6, duplicate the picture of the mask pattern 4 of photomask 1.In addition, under above-mentioned mean value and the inconsistent situation of unit number, for example be judged as that color filter substrate 6 is other kinds, perhaps the formation of black matrix" 7 is defective, stops exposure in this case and reports to the police.
Afterwards, the look-up table (LUT) of the reference position S2 of the color filter substrate of storing in view data that will be photographed by filming apparatus and the storage part 6 compares, and comes detection reference position S2.Then, as shown in Figure 7, the unit number of photo detector of unit number and the reference mark 12a that detects photomask 1 of photo detector that detects the filming apparatus of said reference position S2 is compared, to arrow B, the fine motion of C direction, make both horizontal range L become L photomask 1
0Or L
0± x.In addition, as required, photomask 1 is that central shaft rotates adjustment with the center of its face.Like this, though when color filter substrate 6 is offset on the direction that is orthogonal to the conveyance direction shown in the arrow A by conveyance, photomask 1 also can move thereupon, thereby can duplicate the picture of the mask pattern 4 of photomask 1 in the target location accurately.
Under this situation, because another face 2b at the transparent base material 2 of photomask 1, prevent that ultraviolet ray contained in the exposure light from becoming the antireflection film 10 of sub reflector having formed with the formation of mask pattern 4 zone corresponding regional 9, therefore, ultraviolet ray is by these antireflection film 10 inhibitory reflexs, and passes the mask pattern 4 of photomask 1 efficiently.Then, expose efficiently colored diaphragm on the color filter substrate 6.
On the other hand, another face 2b at photomask 1, formed visible light transmissive and reflection in formation zone corresponding regional 13 or absorbed ultraviolet wavelength selectivity film 14 with viewport 5 and mask side alignment mark 12, therefore, shone the ultraviolet composition of the exposure light of stating viewport 5 and mask side alignment mark 12 by above-mentioned wavelength selectivity film 14 reflections or absorption.Thereby the ultraviolet composition of exposure light can not shine on the color filter substrate 6 by viewport 5 and mask side alignment mark 12.
Therefore, even be formed with viewport 5 and mask side alignment mark 12 near mask pattern 4 before and after the conveyance direction, the picture of above-mentioned viewport 5 and mask side alignment mark 12 also can not be replicated in the exposure area 15 of color filter substrate 6.
On the other hand, because therefore the above-mentioned wavelength selectivity film 14 of visible light transmissive, can observe substrate-side alignment mark 11, aligning affirmation mark 16 and the pixel 8 of color filter substrate 6 by above-mentioned viewport 5.Thereby, can be in conveyance color filter substrate 6, confirming the substrate-side alignment mark 11 of color filter substrates 6 and the position of pixel 8 near passing through viewport 5 on the position of mask pattern 4, can carry out contraposition to the reference position S1 of photomask 1 and the reference position S2 of color filter substrate 6 thus, thereby compared with prior art more can improve both aligning accuracy.
In addition, in the above-described embodiment, mask side alignment mark 12, substrate-side alignment mark 11 and aligning confirm that mark 16 forms the shape that is the elongated shape extension on the arrow A direction, but the invention is not restricted to this, as long as can utilize the photo detector of filming apparatus to detect, then also can be rectangle or linear, perhaps also can form width width about equally with the pixel 8 of color filter substrate 6.In addition, in the above description, be that one situation is set forth about substrate-side alignment mark 11, but the invention is not restricted to this, also can form a plurality of in accordance with regulations at interval.
In addition, in the above-described embodiment, be illustrated about on color filter substrate 6, having formed substrate-side alignment mark 11 and having aimed at the situation of confirming mark 16, but the invention is not restricted to this, also can not have aforesaid substrate side alignment mark 11 and aligning to confirm mark 16.Under this situation, also can be in the exposure area assigned position of 15 conveyance direction both sides form other alignment mark, also form alignment mark at the two ends of photomask 1 accordingly with it, before conveyance color filter substrate 6, the coarse adjustment that utilizes two alignment marks to aim at, in carrying out, exposure, utilize said method to carry out contraposition with behind the reference position S2 of filming apparatus by viewport 5 detection pixels 8.
In addition, in the above-described embodiment, be illustrated about arranging the situation that has formed mask side alignment mark 12 in the side end outside of viewport 5, but the invention is not restricted to this, also can extend to end side 2d side from a side end 2c side of transparent base material 2 and form long viewport 5, portion forms mask side alignment mark 12 within it.Under this situation, form for example mask side alignment mark 12 of elongated shape with opaque coating.
In addition, can there be aforementioned mask side alignment mark 12 yet.Under this situation, be predetermined reference position S1 with mask pattern 12 and have the photo detector of filming apparatus of position relation of regulation as the benchmark photo detector, carry out contraposition like this: make this benchmark photo detector and aforesaid substrate side alignment mark 11 or the distance of photo detector that detects the reference position S2 of color filter substrate 6 become the distance of regulation, thereby can carry out the contraposition of photomask 1 and color filter substrate 6.
In addition, in the above description, situation about exposure light irradiation mask pattern 4, viewport 5 and mask side alignment mark 12 is set forth, but the invention is not restricted to this, also can dwindle the beam diameter of exposure light, make exposure light can not shine viewport 5 and mask side alignment mark 12.Under this situation, also can not cover viewport 5 and mask side alignment mark 12 formation visible light transmissive and the wavelength selectivity film 14 of uv reflectance.
And, in the above description, be that the situation of color filter substrate 6 is set forth about substrate, but the invention is not restricted to this, so long as form the substrate of the exposing patterns of striated, then can be arbitrary structures.
Claims (10)
1. photomask is made of transparent base material and the photomask that is formed on the face of this transparent base material, and this photomask is characterised in that to have:
A plurality of mask patterns, unidirectional array are formed on the above-mentioned photomask, and exposure light is seen through;
Viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observes opposed substrate surface by this viewport.
2. photomask as claimed in claim 1 is characterized in that, at least one face of above-mentioned transparent base material, covers above-mentioned viewport and is formed with visible light transmissive and reflection or absorb ultraviolet wavelength selectivity film.
3. photomask is made of transparent base material and the photomask that is formed on the face of this transparent base material, and this photomask is characterised in that to have:
A plurality of mask patterns, unidirectional array are formed on the above-mentioned photomask, and exposure light is seen through;
Viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observes opposed substrate surface by this viewport;
Mask side alignment mark is formed in the above-mentioned viewport or the side end outside of viewport, and with above-mentioned a plurality of mask patterns at least one have the position relation of regulation, and be used for the contraposition with aforesaid substrate.
4. photomask as claimed in claim 3 is characterized in that, at least one face of above-mentioned transparent base material, covers above-mentioned viewport and mask side alignment mark and is formed with visible light transmissive and reflection or absorb ultraviolet wavelength selectivity film.
5. exposure method, the photomask that use is provided with a plurality of mask patterns and viewport exposes, wherein, described a plurality of mask pattern unidirectional array is formed on the photomask, and exposure light is seen through, described photomask is formed on the face of transparent base material, described viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observe opposed substrate surface by this viewport, above-mentioned exposure method is characterised in that, comprising:
So that above-mentioned viewport is positioned at the mode of the forward side on the conveyance direction of substrate, dispose the step of above-mentioned photomask;
On the direction that the orientation with above-mentioned a plurality of mask patterns intersects, conveyance is coated with the step of the substrate of photoresist;
Utilize filming apparatus to pass through above-mentioned viewport and take the aforesaid substrate surface, detect the step of the reference position of setting with the assigned position relation with respect to the reference pattern that is formed on this substrate with this;
On the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, horizontal range between in the reference position of the feasible aforesaid substrate that is detected and a plurality of mask patterns of above-mentioned photomask any becomes setting, aforesaid substrate and photomask is carried out the step of contraposition with this.
6. exposure method, use is provided with a plurality of mask patterns, the photomask of viewport and mask side alignment mark exposes, wherein, described a plurality of mask pattern unidirectional array is formed on the photomask, and exposure light is seen through, described photomask is formed on the face of transparent base material, described viewport is formed on the above-mentioned photomask in the mode of a side of the orientation that is positioned at above-mentioned a plurality of mask patterns, and can observe opposed substrate surface by this viewport, described mask side alignment mark is formed in the above-mentioned viewport or a side end of the viewport outside, and with above-mentioned a plurality of mask patterns at least one have the position relation of regulation, and be used for contraposition with aforesaid substrate, above-mentioned exposure method is characterised in that, comprising:
So that above-mentioned viewport is positioned at the mode of the forward side on the conveyance direction of substrate, dispose the step of above-mentioned photomask;
On the direction that the orientation with above-mentioned a plurality of mask patterns intersects, conveyance is coated with the step of the substrate of photoresist;
Utilize filming apparatus to pass through above-mentioned viewport and take the aforesaid substrate surface, detect the step of the reference position of setting with the assigned position relation with respect to the reference pattern that is formed on this substrate with this;
Utilize above-mentioned filming apparatus to take the mask side alignment mark of above-mentioned photomask, detect the step of its position with this;
On the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, horizontal range between the reference position of the feasible aforesaid substrate that is detected and the mask side alignment mark of above-mentioned photomask becomes setting, aforesaid substrate and photomask is carried out the step of contraposition with this.
7. exposure method as claimed in claim 6 is characterized in that, carries out the step of the reference position of detecting aforesaid substrate and the step of the position of the mask side alignment mark that detects above-mentioned photomask simultaneously.
8. exposure method as claimed in claim 6, it is characterized in that, aforesaid substrate is formed with the substrate-side alignment mark that is used for carrying out with the mask side alignment mark of above-mentioned photomask contraposition at the one side end, and makes this substrate-side alignment mark and said reference pattern have the position relation of regulation.
9. exposure method as claimed in claim 8 is characterized in that, so that be formed with the mode conveyance aforesaid substrate that the end of aforesaid substrate side alignment mark becomes conveyance direction the place ahead.
10. exposure method as claimed in claim 9, it is characterized in that, on the direction of intersecting with the conveyance direction of aforesaid substrate, move above-mentioned photomask, make the horizontal range between the position of mask side alignment mark of the position of aforesaid substrate side alignment mark and above-mentioned photomask become setting, with the contraposition between this substrate of this coarse adjustment and the photomask, mobile then aforesaid substrate, make the horizontal range between the position of the reference position of aforesaid substrate and mask side alignment mark become setting, this substrate and photomask are carried out contraposition with this.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005295055A JP5145530B2 (en) | 2005-10-07 | 2005-10-07 | Photomask and exposure method using the same |
| JP295055/2005 | 2005-10-07 | ||
| PCT/JP2006/318952 WO2007043323A1 (en) | 2005-10-07 | 2006-09-25 | Photomask and exposure method using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101273302A true CN101273302A (en) | 2008-09-24 |
| CN101273302B CN101273302B (en) | 2012-02-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680035418XA Active CN101273302B (en) | 2005-10-07 | 2006-09-25 | Photomask and exposure method using same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5145530B2 (en) |
| KR (1) | KR101205521B1 (en) |
| CN (1) | CN101273302B (en) |
| TW (1) | TWI407246B (en) |
| WO (1) | WO2007043323A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103572246A (en) * | 2012-07-31 | 2014-02-12 | 三星显示有限公司 | Mask for deposition and method for alignment thereof |
| CN104503203A (en) * | 2015-01-15 | 2015-04-08 | 京东方科技集团股份有限公司 | Mask plate and production method thereof and display panel frame sealing adhesive curing method |
| CN111279270A (en) * | 2017-12-08 | 2020-06-12 | 株式会社V技术 | Exposure apparatus and exposure method |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661218B (en) * | 2008-08-28 | 2012-06-13 | 富葵精密组件(深圳)有限公司 | Method for preparing transparent light mask |
| JP5633021B2 (en) * | 2009-06-29 | 2014-12-03 | 株式会社ブイ・テクノロジー | Alignment method, alignment apparatus, and exposure apparatus |
| JP5843191B2 (en) * | 2011-08-03 | 2016-01-13 | 株式会社ブイ・テクノロジー | Photo mask |
| CN107300836B (en) * | 2017-08-16 | 2020-03-10 | 深圳市华星光电技术有限公司 | Exposure method and exposure apparatus |
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| JPS61185929A (en) * | 1985-02-13 | 1986-08-19 | Nec Corp | X-ray exposure mask |
| JPH0196655A (en) * | 1987-10-08 | 1989-04-14 | Toshiba Corp | Glass mask |
| JP2668834B2 (en) * | 1989-03-31 | 1997-10-27 | ウシオ電機株式会社 | Exposure equipment |
| JPH0513297A (en) * | 1991-07-09 | 1993-01-22 | Nikon Corp | Aligning apparatus |
| JPH09274323A (en) * | 1996-04-04 | 1997-10-21 | Toppan Printing Co Ltd | Pattern exposing method |
| JP3740847B2 (en) * | 1998-06-29 | 2006-02-01 | 株式会社村田製作所 | Semiconductor device manufacturing method and photomask positioning method |
| JP2000031015A (en) * | 1998-07-13 | 2000-01-28 | Nikon Corp | Position detecting method, position adjusting method, scanning exposure method and scanning aligner thereof, and device manufacture |
| JP3085292B2 (en) * | 1998-10-14 | 2000-09-04 | 株式会社ニコン | Scanning exposure equipment |
| US6360012B1 (en) * | 1999-06-25 | 2002-03-19 | Svg Lithography Systems, Inc. | In situ projection optic metrology method and apparatus |
| WO2004011967A1 (en) * | 2002-07-26 | 2004-02-05 | Nikon Corporation | Diffractive optics, illumiinating optical system, exposure system and exposure method |
| JP3884371B2 (en) * | 2002-11-26 | 2007-02-21 | 株式会社東芝 | Reticle, exposure monitoring method, exposure method, and semiconductor device manufacturing method |
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2005
- 2005-10-07 JP JP2005295055A patent/JP5145530B2/en active Active
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2006
- 2006-09-25 CN CN200680035418XA patent/CN101273302B/en active Active
- 2006-09-25 KR KR1020087007850A patent/KR101205521B1/en active IP Right Grant
- 2006-09-25 WO PCT/JP2006/318952 patent/WO2007043323A1/en active Application Filing
- 2006-10-05 TW TW095136984A patent/TWI407246B/en active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103572246A (en) * | 2012-07-31 | 2014-02-12 | 三星显示有限公司 | Mask for deposition and method for alignment thereof |
| US9757764B2 (en) | 2012-07-31 | 2017-09-12 | Samsung Display Co., Ltd. | Mask for deposition and method for aligning the same |
| CN104503203A (en) * | 2015-01-15 | 2015-04-08 | 京东方科技集团股份有限公司 | Mask plate and production method thereof and display panel frame sealing adhesive curing method |
| WO2016112636A1 (en) * | 2015-01-15 | 2016-07-21 | 京东方科技集团股份有限公司 | Mask plate and preparation method therefor, and method for curing sealant in display panel |
| CN111279270A (en) * | 2017-12-08 | 2020-06-12 | 株式会社V技术 | Exposure apparatus and exposure method |
| CN111279270B (en) * | 2017-12-08 | 2023-04-04 | 株式会社V技术 | Exposure apparatus and exposure method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007043323A1 (en) | 2007-04-19 |
| TW200728905A (en) | 2007-08-01 |
| TWI407246B (en) | 2013-09-01 |
| KR101205521B1 (en) | 2012-11-28 |
| CN101273302B (en) | 2012-02-01 |
| KR20080053480A (en) | 2008-06-13 |
| JP5145530B2 (en) | 2013-02-20 |
| JP2007102093A (en) | 2007-04-19 |
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