CN1012730B - 高介电常数瓷质组成物 - Google Patents
高介电常数瓷质组成物Info
- Publication number
- CN1012730B CN1012730B CN86103056A CN86103056A CN1012730B CN 1012730 B CN1012730 B CN 1012730B CN 86103056 A CN86103056 A CN 86103056A CN 86103056 A CN86103056 A CN 86103056A CN 1012730 B CN1012730 B CN 1012730B
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- 239000000203 mixture Substances 0.000 title claims abstract description 34
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 19
- 239000000919 ceramic Substances 0.000 claims description 9
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 238000005245 sintering Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 3
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 11
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004939 coking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 239000004594 Masterbatch (MB) Substances 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
- C04B35/499—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides containing also titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Abstract
本发明是关于可将烧结温度降至1000℃以下的Pb(Mg1/3.Nb2/3)O3-PbTiO3-Pb(Mgn1/3.Nb2/3)O3体系高介电常数瓷质组成物，该组成物是由含有Pb(Mg1/3.Nb2/3)O395摩尔%、PbTiO3、5摩尔%、Pb(Mg1/3，Nb2/3)O30.5重量%的主成份与含有PbO与ZnO的副成份所组成。
Description
本发明涉及用于多层瓷电容器Pb（Mg1/3、Nb2/3）O3-PbTiO3-Pb（Mg1/3、Nb2/3）O3体系高介电常数瓷质组合物。
传统式的Pb（Mg1/3、Nb2/3）O3-PbTiO3-Pb（Mg1/3、Nb2/3）O3体系的瓷电介质，其介电常数εs显示高值，而介质损耗tanδ极小，绝缘电阻IR显示大值，各种介电特性良好，但需要1150℃以上的烧结温度与高温区。
因此，烧结时，须要大量的热能，高温下窑设备与焙烧材料的热磨损更加激烈，所以有焙烧装置保全费用（维持费）增高的缺点，再者，在多层瓷电容器制造法上，必须在内电极嵌入瓷电介质状态下进行烧结。一般，Ag-Pd合金被用作内电极。因此随着电介质材料烧结温度的增高，Pd含量亦须随之增多，必须使用价格昂贵的东西作为电极，有导致制造成本上升的缺点。
因此，本发明旨在提供可在1000℃以下的低温烧结的瓷电介质。例如，使用这种瓷电介质作为多层瓷电容器时，可以使用银系（组）、镍系（组）铝系（组）等等廉价而熔点低的金属材料作为嵌入内电极，对于最终产品瓷电容器的制造成本极其有利。
本发明人鉴于上述之要求，经专心研究，发现在Pb（Mg1/3，Nb2/3）O3-PbTiO3-Pb（Mg1/3、Nb2/3）O3的混合组合物中，添加氧化铅与氧化锌、藉此添加，使烧结温度在1000℃以下的场合，亦可得到具有与传统式同样的各种介电特性之高介电常数瓷器。
本发明是Pb（Mg1/3.Nb2/3）O3-PbTiO3-Pb（Mn1/3.Nb2/3）O3体系高介电常数瓷质组合物，由含有Pb（Mn1/3.Nb2/3）O395摩尔%，PbTiO35摩尔%、Pb（Mn1/3.Nb2/3）O30.5外加重量%的主成份与含有PbO及ZnO之副成份所构成。
举一具体的实施例加以说明。在上述副成分中，PbO为ZnO的50～93重量%，而以67～90重量%较好。最理想的是在80～90重量%的范围内。
再者，在实施例中，上述的副成分与上述主成分的比率，在超过0.25重量%（0.25重量%不含在内，而低于1.25重量%（1.25重量%不含在内）的范围中，0.3至1.25重量%以下亦可，但最理想的是0.5至1.25重量%以下的范围。
图1表示副成分PbO与ZnO之配比（重量%）与各种介电特性之关系的示意图，图2表示与主成分相对比的副成分之添加量与各种介电特性之关系的示意图。
现举本发明的一个较具体实施方案，并结合附图说明如下：
使用氧化铅、氧化铌、氧化镁、氧化钛、氧化锰作为原始材料，依表1之配比，用合成树脂球磨机将这些原料湿式混合之后，以700～850℃的温度煅烧两小时，使起化学反应，再用球磨机将这些反应物磨成粒径0.2μm～5.0μm左右的微粒。再依表1所示之比率，用球磨机等物另外将氧化铅与氧化锌磨成0.1μm～2.0μm左右的微粒，混合后依表1所示的规定量将之添加于上述的母料粉碎混合物中，再用球磨机将之细磨成0.2μm～3.0μm左右的微粒。
在这些细磨混合物里，适当地添加聚氯乙烯作为烧结材料使之成为去沫稀浆、再以大约3吨/cm2的造型压力将之作成直径16.5mm厚度0.6mm的圆盘形成型物，然后，为防止高温时，铅成分的蒸发，将上述成型物密封在用氧化镁瓷器制成的容器里，用大约950℃的温度正式地焙烧两个小时。然后再将制成的瓷器元件的两个端面烧接上银电极。
依此方法制成的样品，其各种介电特性测定的结果，示于表1，这里用频率1KHz测定介电常数εs及介质损耗tanδ、绝缘电阻IR1以外接500V直流电在
20℃的室温下测定之。
如表1所示，依此法制成的高介电常数瓷质组合物，其介电常数εs显示约16.500～20.500的高值，介质损耗tanδ约0.8～1.4%的小值，绝缘电阻IR，显示4×10″（Ω）非常大的值，而烧结温度，用950℃的低温度亦可烧结。
图1，以副成分氧化铅PbO与氧化锌ZnO的配比（重量%）为横轴，以各个绝缘电阻logIR，介质损耗tan（%），介电常数εs为纵轴。图2以与主成分相对比之副成分PbO/ZnO的添加量（重量%）为横轴，如前述一般地，以各个logIR、tanδ（%）、εs为纵轴。
由图1、图2可知，副成分组成的范围，即PbO50～93重量%，ZnO7～50重量%之范围外，即在PbO50重量%以下（ZnO超过50重量%）之场合瓷器的烧结性降低，低温度的烧结成为困难。而当PbO超过93重量%的场合（ZnO7重量%以下），烧结性固然甚好，但介电常数εs则急剧降低，本来盼求高介电常数的目的，变为不可能。再者，与主成分相对比的副成分添加量（重量%）范围，在0.25以上，1.25重量%以下的范围外，亦即当与主成分相对比的副成分之添加量在0.25重量%以下时，烧结不足够，（但提高烧结温度时，烧结即为可能），添加量在1.25重量%以上时，反应性则反常地提高，局部的异常晶粒生长及垫料与瓷料发生反应，这样，要把它作为具备各种介电手持性陶瓷使用是很困难的。
本发明在已知的Pb（Mg1/3.Nb2/3）O3-PbTiO3-Pb（Mn1/3、Nb2/3）O3体系高介电常数瓷质组合物中，添加PbO与ZnO，作为副成分添加，可能使烧结温度降至1000℃以下。因此，把它使用在多层瓷电容器的场合，可以使用银系、镍系、铝系等较廉价，熔点低的金属作为埋置内电极。因此，较诸传统式高温区烧结材料，在制造费用上，可以减少热能，窑设备焙烧材料的保全费用，对最终产品的价格极为有利。
Claims (5)
1、一种Pb(Mg1/3、Nb2/3)O3-PbTiO3-Pb(Mn1/3、Nb2/3)O3体系的高介电常数瓷质组合物，其特征在于它是由含有Pb(Mg1/3.Nb2/3)O395摩尔%、PbTiO35摩尔%，Pb(Mn1/3.Nb2/3)O30.5外加重量%的主成份与含有PbO与ZnO之副成份组成，其中，副成分中的PbO为ZnO的50-93重量%，而副成份为主成份的0.25以上1.25重量%以下。
2、按照权利要求1的高介电常数瓷质组合物，其特征在于上述副成份中PbO为ZnO的67-90重量%。
3、按照权利要求1的高介电常数瓷质组合物，其特征在于上述副成份为主成份的0.3至1.25重量%以下。
4、按照权利要求2的高介电常数瓷质组合物，其特征在于上述副成份中PbO为ZnO的80-90重量%。
5、按照权利要求3的高介电常数瓷质组合物，其特征在于上述副成份为上述主成份的0.5至1.25重量%以下。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60093741A JPS61256959A (ja) | 1985-05-02 | 1985-05-02 | 高誘電率磁器組成物 |
| JP60-93741 | 1985-05-02 | ||
| JP93741/85 | 1985-05-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86103056A CN86103056A (zh) | 1986-10-29 |
| CN1012730B true CN1012730B (zh) | 1991-06-05 |
Family
ID=14090836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN86103056A Expired CN1012730B (zh) | 1985-05-02 | 1986-04-29 | 高介电常数瓷质组成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4692422A (zh) |
| EP (1) | EP0200207B1 (zh) |
| JP (1) | JPS61256959A (zh) |
| KR (1) | KR930001539B1 (zh) |
| CN (1) | CN1012730B (zh) |
| DE (1) | DE3661586D1 (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63185853A (ja) * | 1987-01-27 | 1988-08-01 | ティーディーケイ株式会社 | 高誘電率磁器組成物 |
| US5006956A (en) * | 1988-11-07 | 1991-04-09 | Matsushita Electric Industrial Co., Ltd. | Dielectric ceramic composition |
| US5364840A (en) * | 1989-12-05 | 1994-11-15 | Vical, Inc. | Synthetic calcitonin peptides |
| JP2564676B2 (ja) * | 1990-02-22 | 1996-12-18 | 三菱マテリアル 株式会社 | 電子光学用組成物 |
| KR970008754B1 (en) * | 1994-12-23 | 1997-05-28 | Korea Inst Sci & Tech | Multilayer ceramic capacitor and production thereof |
| KR19980040840A (ko) * | 1996-11-29 | 1998-08-17 | 조희재 | 저온 소결용 유전체 세라믹스 조성물 |
| KR100324266B1 (ko) * | 1999-07-19 | 2002-02-25 | 구자홍 | 고체 표시소자용 유전체후막 조성물 |
| CN114436652B (zh) * | 2022-01-28 | 2023-05-16 | 厦门乃尔电子有限公司 | 一种锆钛酸铅-铌钽镁酸铅压电陶瓷材料及其制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5551761A (en) * | 1978-10-06 | 1980-04-15 | Tdk Electronics Co Ltd | High dielectric constance ceramic composition |
| JPS5551760A (en) * | 1978-10-06 | 1980-04-15 | Tdk Electronics Co Ltd | High dielectric constance ceramic composition |
| GB2035994B (en) * | 1978-10-30 | 1982-11-24 | Tdk Electronics Co Ltd | High dielectric constant type ceramic composition |
| JPS6031797B2 (ja) * | 1980-07-24 | 1985-07-24 | 株式会社村田製作所 | 誘電体磁器組成物 |
| GB2107300B (en) * | 1981-07-03 | 1985-04-24 | Standard Telephones Cables Ltd | Ceramic capacitors and dielectric compositions |
| US4530031A (en) * | 1984-03-12 | 1985-07-16 | E. I. Du Pont De Nemours And Company | Dielectric composition |
-
1985
- 1985-05-02 JP JP60093741A patent/JPS61256959A/ja active Granted
-
1986
- 1986-04-29 EP EP86105908A patent/EP0200207B1/en not_active Expired
- 1986-04-29 CN CN86103056A patent/CN1012730B/zh not_active Expired
- 1986-04-29 DE DE8686105908T patent/DE3661586D1/de not_active Expired
- 1986-05-01 KR KR1019860003413A patent/KR930001539B1/ko not_active IP Right Cessation
- 1986-05-02 US US06/858,945 patent/US4692422A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0200207A1 (en) | 1986-11-05 |
| JPS61256959A (ja) | 1986-11-14 |
| CN86103056A (zh) | 1986-10-29 |
| EP0200207B1 (en) | 1988-12-28 |
| KR860009446A (ko) | 1986-12-23 |
| US4692422A (en) | 1987-09-08 |
| KR930001539B1 (ko) | 1993-03-04 |
| DE3661586D1 (en) | 1989-02-02 |
| JPH0583508B2 (zh) | 1993-11-26 |
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