CN101271887A - 半导体发光装置 - Google Patents
半导体发光装置 Download PDFInfo
- Publication number
- CN101271887A CN101271887A CNA2008100865735A CN200810086573A CN101271887A CN 101271887 A CN101271887 A CN 101271887A CN A2008100865735 A CNA2008100865735 A CN A2008100865735A CN 200810086573 A CN200810086573 A CN 200810086573A CN 101271887 A CN101271887 A CN 101271887A
- Authority
- CN
- China
- Prior art keywords
- semiconductor light
- emitting
- lead
- light
- emitting apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 229920005989 resin Polymers 0.000 claims abstract description 49
- 239000011347 resin Substances 0.000 claims abstract description 49
- 238000007493 shaping process Methods 0.000 claims description 26
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 2
- 229920002050 silicone resin Polymers 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 241000218202 Coptis Species 0.000 description 7
- 235000002991 Coptis groenlandica Nutrition 0.000 description 7
- 238000007789 sealing Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
- H01L2224/48097—Kinked the kinked part being in proximity to the bonding area outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
一种半导体装置,沿着与发光二极管(3)的发光面垂直的成形树脂部(2)的外壁配置外部引线(1a~1h),并且也在与发光面平行且对置的成形树脂部(2)的外壁上配置外部引线,将配有外部引线的成形树脂部(2)的外部设为安装面(2a),在作为安装面的各外壁,分别至少包括1个以上的阳极用以及阴极用的外部引线。通过该结构,提供了一种能在同一部件中选择对要安装的基板搭载侧面发光型还是顶部发光型的半导体发光装置。
Description
技术领域
本发明涉及采用发光二极管等的半导体发光装置。
背景技术
采用发光二极管(以下记做“LED”)的表面安装型半导体发光装置,以往具有图12~14所代表的构造。图12是以往的表面安装型半导体发光装置的主视图,图13是该半导体发光装置的仰视图,图14是该半导体发光装置的侧视图。在以往的表面安装型半导体发光装置中,以固定引线架101的形式,通过嵌入成形等形成树脂部102。在引线架101上,LED芯片103通过银(Ag)膏104以及金线105进行电以及机械连接,LED芯片103的周围被环氧树脂106保护密封。
引线架101被形成为指定图案,在实施了焊接(bonding)或镀银的状态下,插入成形于树脂部102内。之后,在引线架101上,通过银膏104以及金线105对LED芯片103进行电以及机械连接,并通过环氧树脂106来密封。之后,切掉不要部分的引线,弯曲成コ字型,形成端子部107,该端子部107用于与具备驱动电路等电路的安装基板接合。图12所示的以往产品是顶部发光型的表面安装型LED发光元件,其中发光面108平行于安装面。
作为公开了上述以往的表面安装型LED发光元件的现有文献,例如举出特开2004-071675号公报、特开2006-222382号公报等。
在上述以往的表面安装型LED发光元件中,在安装到具备驱动电路等电路的安装基板上时,通过LED发光元件的配置来确定是采用平行安装于发光面的顶部发光型、还是采用垂直安装于发光面的侧面发光型。由此,关于对基板搭载侧面发光型还是顶部发光型,在同一部件中没有选择的余地。
发明内容
本发明的目的在于解决上述的缺点,提供一种半导体发光装置,其根据照射对象体的状况等,能在同一部件上选择对要安装的基板是搭载侧面发光型还是顶部发光型。
为了解决上述课题,本发明的半导体发光装置,其包括:半导体发光元件;引线架;其具有多个内部引线以及电极用的多个外部引线,所述多个内部引线具有搭载所述半导体发光元件的搭载面以及引出电极部;和成形树脂部,其用于固定引线架。各外部引线沿着与半导体发光元件的发光面垂直的成形树脂部的第一外壁、以及与发光面平行且与发光面对置的成形树脂部的第二外壁配置,这些第一以及第二外壁面构成安装面。分别在第一以及第二外壁面上,至少包括一个以上的与半导体发光元件的阳极电极以及阴极电极电连接的阳极用以及阴极用的外部引线。
各外部引线跨过第一以及第二外壁面配置,且分别在第一以及第二外壁面上,配置与各半导体发光元件的阳极电极以及阴极电极电连接的阳极端子以及阴极端子的端子对的全部。
优选各外部引线跨过第一以及第二外壁面配置,且与外部引线的宽度方向上排列的多个内部引线分别相连的多个外部引线,在第一以及第二外壁面相互对置配置。另外,外部引线的表面平行于成形树脂部的壁面且是平坦的。
在本发明的优选实施方式中,外部引线具有八个端子,其中四个端子并用配置在第一以及第二外壁面,剩余的四个端子两个一组分别配置在第一以及第二外壁面。通过这样的结构,能将第一外壁面作为侧面发光搭载用、将第二外壁面作为顶部发光搭载用的搭载面使用。
另外,可以在引线架的内部从公共的引线分支为两个端子,其中一个端子形成为用于侧面发光端子,另一个端子形成为用于顶部发光。可以搭载多个半导体发光元件,多个半导体发光元件的阳极和阴极分别具有外部引线的端子,能进行多个半导体发光元件的独立驱动以及独立电流调整。
另外,半导体发光元件通过三原色(红、绿、蓝)的芯片构成,能进行各芯片的电流调整。进一步,也可以构成为外部引线是通过对例如Cu等的焊锡湿润性差的主体电镀Sn、Au、或Ag等焊锡湿润性好的金属而得到的。
另外,固定所述引线架的成形树脂部在发光面侧的开口面覆盖内部引线表面的一部分,相反,固定所述引线架的成形树脂部在发光面侧没有用开口面覆盖内部引线表面。
能在同一部件中选择搭载侧面发光型还是搭载顶部发光型,能在1个部件中宽泛地活用半导体发光装置。
本发明的上述其他的目的、特征、方式以及优点,通过与随附的附图相关的理解的与本发明有关的下述详细的说明可以明了。
附图说明
图1是表示本发明的实施方式1中的半导体发光装置的概要的立体图。
图2是从本发明的实施方式1中的半导体发光装置的其他方向观察的立体图。
图3是本发明的实施方式1中的半导体发光装置的主视图。
图4是本发明的实施方式1中的半导体发光装置的俯视图。
图5是本发明的实施方式1中的半导体发光装置的仰视图。
图6是本发明的实施方式1中的半导体发光装置的侧视图。
图7是本发明的实施方式1中的半导体发光装置的后视图。
图8是本发明的实施方式1中的半导体发光装置的剖视图。
图9是本发明的实施方式2中的半导体发光装置的主视图。
图10是本发明的实施方式3中的半导体发光装置的主视图。
图11是本发明的实施方式4中的半导体发光装置的主视图。
图12是以往的半导体发光装置的主视图。
图13是以往的半导体发光装置的仰视图。
图14是以往的半导体发光装置的侧视图。
具体实施方式
(实施方式1)
基于图1~图8说明本发明的实施方式1。实施方式1是采用了LED作为发光元件的表面安装型的半导体发光装置,图1、图2是分别从不同方向观察的立体图。在图1或图2中,具备作为外部引线的端子1a、1b、1c、1d、1e、1f、1g、1h的引线架1插入成形于成形树脂部2内并被保护,该成形树脂部2采用例如聚邻苯二酰胺(PPA)、聚碳酸酯树脂、环氧树脂等公知的半导体元件的密封材料。在引线架1上搭载LED3,该LED3通过银膏4以及金线5而与引线架1机械以及电连接。另外,为了保持并固定引线架1,按照包围LED3的搭载面1x的周围、在搭载面1x掩埋引线架的间隙、并覆盖背面整体的方式,由白色树脂形成成形树脂部2。
另外,为了保护LED3,通过密封树脂6密封LED3的周围。密封树脂6是透明树脂或混入了扩散剂的乳白色树脂,其主要通过浇注法注入成形,由环氧树脂或硅酮树脂构成。也能通过传递模塑法、注射成形等来形成,也能使射出来自LED3的光的正面部分即发光部7成为透镜形状等任意的形状。
在引线架1的内部,按照如下方式布局:从公共的引线分支2个端子,将其中1个端子形成用做侧面发光端子,电阻1g和端子1a、端子1h和端子1f为同一电极,在内部分支成两股,并且能分别在侧面发光用的安装面2a和顶部发光用的安装面2b中使用。
接着,基于图3~图8对本实施方式的半导体发光装置的构造进行详细说明。引线架1,与用于保持并保护引线架1的树脂成形部2一体化,具有多个内部引线1y以及电极用的多个外部引线即端子1a、1b、1c、1d、1e、1f、1g、1h,所述多个内部引线1y具有搭载LED3的搭载面1x。外部端子中,沿着与有LED3的发光部的发光面垂直的成形树脂部2的外壁即侧面发光用的安装面2a,配置端子1a、1b、1c、1d、1e、1f。另外,在平行于发光面7形成的、与发光面7对置的成形树脂部2的外壁即顶部发光用的安装面2b,配置端子1b、1c、1d、1e、1g、1h。这些外部引线的端子中,端子1a、1g以及端子1h、1f是用于阴极的端子对,按所述的各端子对从具有位于最近位置的所述搭载面的内部引线延伸并分支,端子1b、1e、1c是用于阳极的端子,分别从位于最近位置的引线用的内部引线延伸并相连。配置在所述搭载面的正中的内部引线延伸成为与端子1d相连的阴极端子。即,在安装面2a以及安装面2d,各LED3的阳极、阴极电极所对应的阳极用端子和阴极用端子分别一对一对地配置,任一安装面上都没有复杂的安装构造,能以一个面容易地安装在平坦的搭载基板上。
另外,外部引线的端子1b、1c、1d、1e和端子1a、1f,以及端子1b、1c、1d、1e和端子1g、1h,在安装面2a、2b上分别配置成相互对置。各端子的表面与成形树脂部2的外壁面平行且平坦。因此,即使在将安装面2a、2b的某一个作为安装面的情况下,也能在没有倾斜等固定不稳定的状态下进行安装。
另外,在本实施方式中,构成为:搭载3个LED3,各LED3的阳极和阴极具有分别电连接的外部引线的端子1a、1g和端子1f、1h,能进行LED3的独立驱动以及独立电流调整(未图示),采用3原色(红、绿、蓝)的LED结构。这里,设置8个端子的理由是:首先构成为最大能搭载3个芯片,通过搭载3原色并分别独立地控制电流,从而来实现彩色显示。另外,通过将8个端子中的4个端子共用于侧面发光、顶部发光,将剩余4个端子每两个一组分别用于侧面发光、顶部发光,从而能同时使用侧面发光、顶部发光。
另外,在焊锡湿润性差的主体上电镀焊锡湿润性好的金属来得到外部引线的各端子是有利的,主体采用Cu,进行电镀的金属采用Sn、Au、或Ag、或SnBi。另外,为了以不倾斜的方式安装在形成有布线图案的平坦的印刷基板上,作为成形树脂安装面的外壁上配置的各端子,其表面平行于外壁且形成为处于同一平面的厚度。
在本实施方式中,与搭载发光二极管3的内部引线1y相连的外部引线,其面积大于没有搭载发光二极管3的其他引线的面积。通过尽可能地增大搭载LED3的引线的面积,从而针对LED3发光时发热导致的温度上升,能高效地进行散热,能防止搭载LED3的装置整体封装由于热而导致的变色劣化等。另外,通过使搭载LED3的引线变粗,从而能容易地判断在多个引线的哪一个上搭载了LED3。图5或图7的引线1a、1g、1f、1h、1d,相当于体积或面积比没有搭载LED3的内部引线上连接的外部引线1b、1c、1e大的端子(外部端子)。
另外,也可以取代采用密封树脂6,而通过陶瓷与引线一体化。通过采用陶瓷,从而能提高发光元件的散热性。
(实施方式2)
接着,基于图9对本发明的实施方式2进行说明。在本实施方式中,与搭载LED3的搭载面1x平行的成形树脂部2的发光面侧的一角、或与搭载面1x垂直的面的一角,成为倒角面2x,其形状不同于其他角。作为不同的形状,在本实施方式中通过使一角为倒角面2x,从而能表示作为整体产品的LED发光装置的封装的方向性。由此,通过外形识别装置等容易确认LED发光元件的方向。
(实施方式3)
接着,基于图10对本实施方式3进行说明。在本实施方式中,如图10所示,将搭载有LED3的内部引线1y从成形树脂部2露出的面积设为搭载LED3的芯片所需的、且引线接合所需的最小面积。通过减少内部引线1y的露出面积,扩大由成形树脂部2覆盖的面积,从而在成形树脂为对可见光的反射率高的白色的树脂的情况下,能提高对LED3辐射的光的取出效率。另外,通过扩大成形树脂部2和密封树脂6的接合面积,从而能提高成形树脂部2和密封树脂6的密接性。在本实施方式中,作为LED3,适用单线发光二极管的芯片。这里,所谓单线发光二极管的芯片是指,如图10所示,在发光二极管芯片的顶面和底面设有电极。底面侧的电极通过银膏等与内部引线8的框架接合,以实现电接合,顶面侧的电极通过对金线5进行引线接合,从而与内部引线9取得电接合。
(实施方式4)
接着,通过图11对本发明的实施方式4进行说明。图11所示的本实施方式的半导体发光装置是适用于双线发光二极管的芯片的实施方式,而并非图10所示的实施方式3的装置为单线发光二极管的芯片。这里,所谓双线发光二极管是指,如图11所示在LED芯片的顶面具有阳极和阴极的电极的构造的芯片。在双线发光二极管芯片中,配置2根金线,仅从顶面进行必要的连接,通过金线5连接LED芯片顶面的阳极和阳极用的内部引线8,通过金线5连接LED芯片顶面的阴极和阴极用的内部引线9。
如上所述,在本实施方式中构成了以下所述的半导体发光装置:该半导体发光装置具有既能适用于图10所示的通过单线进行内部引线和LED3的连接的单线芯片,又能适用于图11所示的双线芯片的框架布局构造。
根据本发明的上述各实施方式,在制造需要发光元件的装置时,在向电路基板等进行安装的情况下,能利用同一部件选择进行侧面发光型的搭载方法和顶部发光型的搭载方法,能利用于采用LED发光元件的显示装置等。
以上对本发明进行了详细的表示和说明,但这仅仅是例示,并不能用来限定本发明,本发明的范围通过随附的权利要求书的解释可以清楚地理解。
Claims (19)
1.一种半导体发光装置,其包括:
半导体发光元件;
引线架;其具有多个内部引线以及电极用的多个外部引线,所述多个内部引线具有搭载所述半导体发光元件的搭载面以及引出电极部;和
成形树脂部,其用于固定所述引线架,
各所述外部引线沿着与所述半导体发光元件的发光面垂直的成形树脂部的第一外壁、以及与所述发光面平行且与所述发光面对置的成形树脂部的第二外壁配置,
所述成形树脂部的所述第一以及第二外壁面构成安装面,分别在所述第一以及第二外壁面上,至少包括一个以上的与半导体发光元件的阳极电极以及阴极电极电连接的阳极用以及阴极用的外部引线。
2.根据权利要求1所述的半导体发光装置,其特征在于,
各所述外部引线跨过所述第一以及第二外壁面配置,且在各面上,配置分别与各半导体发光元件的阳极电极以及阴极电极电连接的阳极端子以及阴极端子的端子对的全部。
3.根据权利要求1所述的半导体发光装置,其特征在于,
各所述外部引线跨过所述第一以及第二外壁面配置,且与在所述外部引线的宽度方向上排列的多个内部引线分别相连的多个外部引线,在所述第一以及第二外壁面相互对置配置。
4.根据权利要求1所述的半导体发光装置,其特征在于,
所述外部引线的表面平行于成形树脂部的壁面且是平坦的。
5.根据权利要求1所述的半导体发光装置,其特征在于,
所述外部引线具有八个端子,其中四个端子并用配置在所述第一以及第二外壁面,剩余的四个端子两个一组分别配置在所述第一以及第二外壁面。
6.根据权利要求1所述的半导体发光装置,其特征在于,
在所述引线架的内部从公共的引线分支为两个端子,其中一个端子形成为用于侧面发光端子,另一个端子形成为用于顶部发光。
7.根据权利要求1所述的半导体发光装置,其特征在于,
该半导体发光装置搭载多个所述半导体发光元件,多个所述半导体发光元件的阳极和阴极分别具有外部引线的端子,能进行多个所述半导体发光元件的独立驱动以及独立电流调整。
8.根据权利要求1所述的半导体发光装置,其特征在于,
所述半导体发光元件是三原色(红、绿、蓝)的芯片,能进行各芯片的电流调整。
9.根据权利要求1所述的半导体发光装置,其特征在于,
所述外部引线是通过对焊锡湿润性差的主体电镀焊锡湿润性好的金属而得到的。
10.根据权利要求9所述的半导体发光装置,其特征在于,
所述外部引线是通过在由Cu构成的主体上电镀Sn、Au、或Ag而得到的。
11.根据权利要求1所述的半导体发光装置,其特征在于,
通过透明树脂密封所述半导体发光元件。
12.根据权利要求11所述的半导体发光装置,其特征在于,
所述透明树脂是环氧树脂或硅酮树脂。
13.根据权利要求11所述的半导体发光装置,其特征在于,
所述透明树脂是添加了扩散剂的乳白树脂。
14.根据权利要求1所述的半导体发光装置,其特征在于,
所述成形树脂部采用陶瓷来替代成形树脂。
15.根据权利要求1所述的半导体发光装置,其特征在于,
将所述成形树脂部的发光面侧的一角设为不同于其他角的形状。
16.根据权利要求1所述的半导体发光装置,其特征在于,
将搭载了所述半导体发光元件的引线架的外部引线的面积,设为大于没有搭载半导体发光元件的外部引线的面积。
17.根据权利要求1所述的半导体发光装置,其特征在于,
所述半导体发光元件也能搭载于单线芯片或双线芯片中的任一种芯片。
18.根据权利要求1所述的半导体发光装置,其特征在于,
固定所述引线架的成形树脂部在发光面侧的开口面覆盖内部引线表面的一部分。
19.根据权利要求1所述的半导体发光装置,其特征在于,
固定所述引线架的成形树脂部在发光面侧没有用开口面覆盖内部引线表面。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007077348A JP4689637B2 (ja) | 2007-03-23 | 2007-03-23 | 半導体発光装置 |
JP2007-077348 | 2007-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101271887A true CN101271887A (zh) | 2008-09-24 |
CN101271887B CN101271887B (zh) | 2010-08-25 |
Family
ID=39773789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100865735A Expired - Fee Related CN101271887B (zh) | 2007-03-23 | 2008-03-20 | 半导体发光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7812364B2 (zh) |
JP (1) | JP4689637B2 (zh) |
CN (1) | CN101271887B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110681A (zh) * | 2009-12-24 | 2011-06-29 | 林谊 | 一种侧面发光led封装结构 |
CN104241262A (zh) * | 2013-06-14 | 2014-12-24 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
CN105221940A (zh) * | 2014-06-16 | 2016-01-06 | 西铁城电子株式会社 | Led发光装置 |
US9542868B2 (en) | 2011-10-31 | 2017-01-10 | Everlight Electronics Co., Ltd. | Light emitting device, surface mounted device-type light emitting device, and display device |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
JP5279488B2 (ja) * | 2005-05-30 | 2013-09-04 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ケーシング本体およびケーシング本体の製造方法 |
US7675145B2 (en) * | 2006-03-28 | 2010-03-09 | Cree Hong Kong Limited | Apparatus, system and method for use in mounting electronic elements |
US8748915B2 (en) * | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US8735920B2 (en) * | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US8866169B2 (en) * | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
TWM337834U (en) * | 2007-12-10 | 2008-08-01 | Everlight Electronics Co Ltd | Package structure for light emitting diode |
JP5349811B2 (ja) * | 2008-02-06 | 2013-11-20 | シャープ株式会社 | 半導体発光装置 |
JP2010003743A (ja) * | 2008-06-18 | 2010-01-07 | Toshiba Corp | 発光装置 |
KR101101134B1 (ko) * | 2008-07-03 | 2012-01-05 | 삼성엘이디 주식회사 | Led 패키지 및 그 led 패키지를 포함하는 백라이트 유닛 |
US10021742B2 (en) | 2014-09-28 | 2018-07-10 | Jiaxing Super Lighting Electric Appliance Co., Ltd | LED tube lamp |
DE102008049535A1 (de) * | 2008-09-29 | 2010-04-08 | Osram Opto Semiconductors Gmbh | LED-Modul und Herstellungsverfahren |
US8791471B2 (en) * | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
EP2406835A4 (en) * | 2009-03-10 | 2013-09-18 | Nepes Led Corp | LED LADDER FRAME PACK, LED PACKAGE AND METHOD FOR MANUFACTURING THE LED PACKAGE |
KR101662487B1 (ko) * | 2009-10-27 | 2016-10-17 | 삼성전자주식회사 | 백라이트 유닛 |
US20120106126A1 (en) * | 2010-11-01 | 2012-05-03 | Seiko Epson Corporation | Wavelength conversion element, light source device, and projector |
JP5920333B2 (ja) * | 2011-02-28 | 2016-05-18 | 日亜化学工業株式会社 | 発光装置 |
KR101852388B1 (ko) * | 2011-04-28 | 2018-04-26 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR101752447B1 (ko) * | 2011-06-01 | 2017-07-05 | 서울반도체 주식회사 | 발광 다이오드 어셈블리 |
KR101823506B1 (ko) * | 2011-06-29 | 2018-01-30 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
US10842016B2 (en) | 2011-07-06 | 2020-11-17 | Cree, Inc. | Compact optically efficient solid state light source with integrated thermal management |
JP5796394B2 (ja) * | 2011-07-29 | 2015-10-21 | 日亜化学工業株式会社 | 発光装置 |
JP5698633B2 (ja) * | 2011-09-21 | 2015-04-08 | 株式会社東芝 | 半導体発光装置、発光モジュール、および半導体発光装置の製造方法 |
DE102011116534B4 (de) | 2011-10-20 | 2022-06-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Bauelement |
GB2498347A (en) * | 2012-01-10 | 2013-07-17 | Design Led Products Ltd | A lighting panel with side mounted top emitting LEDs |
KR101933189B1 (ko) * | 2012-01-31 | 2019-04-05 | 서울반도체 주식회사 | 발광다이오드 패키지 |
DE102013203759A1 (de) | 2013-03-05 | 2014-09-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und elektronisches Gerät mit optoelektronischem Bauelement |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
JP6374723B2 (ja) * | 2014-07-25 | 2018-08-15 | スタンレー電気株式会社 | 半導体発光装置 |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
CN205979260U (zh) | 2014-09-28 | 2017-02-22 | 嘉兴山蒲照明电器有限公司 | Led直管灯 |
US9689536B2 (en) | 2015-03-10 | 2017-06-27 | Jiaxing Super Lighting Electric Appliance Co., Ltd. | LED tube lamp |
US10514134B2 (en) | 2014-12-05 | 2019-12-24 | Jiaxing Super Lighting Electric Appliance Co., Ltd | LED tube lamp |
US10047932B2 (en) * | 2015-04-02 | 2018-08-14 | Jiaxing Super Lighting Electric Appliance Co., Ltd. | LED tube light with LED leadframes |
JP6504019B2 (ja) * | 2015-10-27 | 2019-04-24 | 豊田合成株式会社 | 発光装置 |
JP2017076809A (ja) * | 2016-12-05 | 2017-04-20 | 大日本印刷株式会社 | 樹脂付リードフレーム、半導体装置、照明装置 |
JP2017143314A (ja) * | 2017-05-24 | 2017-08-17 | ローム株式会社 | Ledモジュール |
JP7460911B2 (ja) | 2020-12-21 | 2024-04-03 | 日亜化学工業株式会社 | 発光装置及びそれを用いたディスプレイ |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0617248U (ja) * | 1991-10-15 | 1994-03-04 | 新電元工業株式会社 | 樹脂封止型電子部品装置 |
DE4446566A1 (de) * | 1994-12-24 | 1996-06-27 | Telefunken Microelectron | Mehrpoliges, oberflächenmontierbares, elektronisches Bauelement |
JP3993302B2 (ja) * | 1998-05-20 | 2007-10-17 | ローム株式会社 | 半導体装置 |
KR100378917B1 (ko) | 1998-05-20 | 2003-04-07 | 로무 가부시키가이샤 | 반도체장치 |
JP4028101B2 (ja) * | 1998-05-20 | 2007-12-26 | ローム株式会社 | 半導体装置 |
JP2002232015A (ja) * | 2001-02-07 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JP2003077317A (ja) * | 2001-09-03 | 2003-03-14 | Toyoda Gosei Co Ltd | Ledランプ |
US7429757B2 (en) * | 2002-06-19 | 2008-09-30 | Sanken Electric Co., Ltd. | Semiconductor light emitting device capable of increasing its brightness |
JP4239509B2 (ja) * | 2002-08-02 | 2009-03-18 | 日亜化学工業株式会社 | 発光ダイオード |
JP2004311916A (ja) * | 2003-02-21 | 2004-11-04 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
US7696526B2 (en) | 2004-01-29 | 2010-04-13 | Dominant Opto Tech Sdn Bhd | Surface mount optoelectronic component |
JP2006024794A (ja) | 2004-07-08 | 2006-01-26 | Sanyo Electric Co Ltd | フルカラー発光ダイオード装置 |
WO2006035626A1 (ja) * | 2004-09-30 | 2006-04-06 | Matsushita Electric Industrial Co., Ltd. | 発光体ユニット |
JP5032747B2 (ja) * | 2005-02-14 | 2012-09-26 | 日亜化学工業株式会社 | 半導体装置 |
JP5119621B2 (ja) * | 2006-04-21 | 2013-01-16 | 日亜化学工業株式会社 | 発光装置 |
JP5349811B2 (ja) | 2008-02-06 | 2013-11-20 | シャープ株式会社 | 半導体発光装置 |
-
2007
- 2007-03-23 JP JP2007077348A patent/JP4689637B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-20 CN CN2008100865735A patent/CN101271887B/zh not_active Expired - Fee Related
- 2008-03-21 US US12/053,356 patent/US7812364B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110681A (zh) * | 2009-12-24 | 2011-06-29 | 林谊 | 一种侧面发光led封装结构 |
US9542868B2 (en) | 2011-10-31 | 2017-01-10 | Everlight Electronics Co., Ltd. | Light emitting device, surface mounted device-type light emitting device, and display device |
CN104241262A (zh) * | 2013-06-14 | 2014-12-24 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
CN105221940A (zh) * | 2014-06-16 | 2016-01-06 | 西铁城电子株式会社 | Led发光装置 |
Also Published As
Publication number | Publication date |
---|---|
US7812364B2 (en) | 2010-10-12 |
CN101271887B (zh) | 2010-08-25 |
US20080230790A1 (en) | 2008-09-25 |
JP2008235826A (ja) | 2008-10-02 |
JP4689637B2 (ja) | 2011-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101271887B (zh) | 半导体发光装置 | |
US7262438B2 (en) | LED mounting having increased heat dissipation | |
CN100502064C (zh) | 用于发光器件的封装 | |
EP2372801B1 (en) | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages include the same | |
US7476913B2 (en) | Light emitting device having a mirror portion | |
CN104078551B (zh) | 发光装置及其制造方法 | |
US9905544B2 (en) | Bonding LED die to lead frame strips | |
JP5347953B2 (ja) | 発光装置およびその製造方法 | |
KR101488451B1 (ko) | 멀티칩 led 패키지 | |
KR101640331B1 (ko) | 방수 led 장치 및 이를 포함하는 led 디스플레이 | |
CN102386176A (zh) | 发光二极管封装件及其制造方法 | |
EP2472616B1 (en) | Light-emitting device package and method of manufacturing the same | |
JP4242194B2 (ja) | 半導体発光装置およびその製造方法 | |
EP2228842B1 (en) | Light emitting device package | |
US9105825B2 (en) | Light source package and method of manufacturing the same | |
US10483446B2 (en) | Electronic device | |
CN215008265U (zh) | Led封装组件 | |
JP2022090270A (ja) | 発光モジュールおよび照明装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100825 |
|
CF01 | Termination of patent right due to non-payment of annual fee |