CN101256294B

CN101256294B - Electro-optical device, semiconductor device, display device, and electronic apparatus having the display device

Info

Publication number: CN101256294B
Application number: CN 200810080656
Authority: CN
Inventors: 小桥裕
Original assignee: Sony Corp
Current assignee: Japan Display West Inc
Priority date: 2007-02-26
Filing date: 2008-02-26
Publication date: 2013-01-02
Anticipated expiration: 2028-02-26
Also published as: CN101256294A; JP2008209555A; JP4784528B2

Abstract

The invention relates to an electro-optical device, a semiconductor device, a display device and an electron device including the same, which can effectively eliminate the thermocurrent of the optical sensor and enhances the electromagnetic noise, including a light intercepting sensor (350P) irradiated by the external light, a shielding sensor (350), a backlight source shielding electrode (611P) composed by the overlapping with the shielding sensor (350), a backlight source shielding electrode (611D) composed by the overlapping with the shielding sensor (350D), and a self correcting voltage circuit (361) for applying the photoelectricity flux of the light intercepting sensor and the shielding sensor to basically be the maximum potential. The two photosensors are arranged in series to shield the light from one side, hence the backlight source shielding electrode for covering the two photosensors are applied with different potentials to make the photocurrent optimized.

Description

Electro-optical device, semiconductor devices, display device and possess its electronic equipment

Technical field

The present invention for example, relates to electro-optical device, semiconductor devices, display device and possesses its electronic equipment.

Background technology

In recent years, on display device, especially adopted the exploitation of carrying the technology of optical sensor function in the liquid crystal indicator of thin film transistor (TFT) to make progress (for example patent documentation 1).The purpose of carrying optical sensor can be enumerated 3: (1) is measured by external light and briliancy etc. is adjusted, and seeks thus that power consumption reduces, picture element improves; (2) backlight is measured, briliancy or colourity are adjusted; (3) position of finger, light pen is recognized and used as membrane keyboard.Can enumerate thin film transistor (TFT) as optical sensor, PIN (p-intrinsic-n, the diode of p-intrinsic-n), PN diode etc.Under any circumstance photographic department all is silicon thin film, increase in order not make the cost in the manufacturing, preferably with the same manufacturing process of the silicon thin film manufacturing that consists of the on-off element that shows.In the situation that consist of optical sensor with thin film transistor (TFT), PIN diode, PN diode etc., the electric current of Flow-through sensor becomes the thermocurrent sum that photocurrent that the illumination corresponding to the light that shines changes and exponential function with the absolute temperature of sensor increase.Therefore, even must effectively remove this thermocurrent in order than higher temperatures the time, also to obtain correct illumination.Therefore, exist configuration be used for the thermocurrent reference by the shading sensor of shading, with not by the situation that is subjected to optical sensor of shading.

At this moment, in the purpose of (1), (3), need so that the light of backlight does not incide sensor ground to carrying out shading with outer light incident side opposition side.Light screening material as backlight, although the purpose about (1), be at optical sensor in the situation of peripheral part of display device, can adopt metal frame, photo-shield strip of constituent components etc., but in recent years, because the restriction in the design etc., so require be close to the viewing area as far as possible or in the inboard of viewing area optical sensor be set.On the other hand, about the purpose of (3), because its function, so must be at the inboard built-in optical sensors of viewing area.And in the purpose of (2), external light carries out shading on the contrary, and so that outer light does not have influence on the luminance detection ground of backlight optical sensor is carried out shading.Because these requirements must arrange certain photomask at optical sensor.

[patent documentation 1] JP 2006-118965 communique

Summary of the invention

Shading electrode, transparency electrode and optical sensor are overlapping to be configured if make, and then because of the current potential owing to shading electrode, transparency electrode thermocurrent is changed, so thermocurrent can not correctly be removed.The present invention makes the current potential optimization that puts on shading electrode and transparency electrode in order to address this problem, and proposes structure, the circuit that can make it to realize.

And, because in the situation that with the shading sensor and placed near the viewing area by optical sensor, become parasitic light and a part is shone in being subjected to optical sensor and shading sensor from the light of viewing area, so the photocurrent of the amount of parasitic light becomes error and is detected.And, being subjected to produce temperature difference between optical sensor and shading sensor, it is inhomogeneous that thermocurrent becomes, and this thermocurrent also becomes error.In the present invention these problems are solved, realize possessing the electro-optical device that more high-precision light sensor is arranged.

The present invention, be electro-optical device, it possesses: the clamping electro-optical substance is (in embodiment between the 1st and the 2nd substrate, be nematic liquid crystal material 922) panel (in embodiment, be liquid crystal panel 911), to this panel the aforementioned the 1st (in embodiment, be active-matrix substrate 101) or the 2nd substrate (in embodiment, be subtend substrate 912) the lighting device of face irradiation light (in embodiment, be backlight unit 926, light guide plate 927), to around the optical detection part that detects of the illumination of light (in embodiment, be testing circuit 360, be subjected to optical sensor 350P and other), with corresponding to the testing result of aforementioned optical detection part and the lighting control section that aforementioned illumination apparatus is controlled (in embodiment, is central operation circuit 781, external power source circuit 784); Aforementioned optical detection part is arranged at the aforementioned the 1st or the 2nd substrate; Possess: by the 1st optical sensor that outer light shone (in embodiment, for being subjected to optical sensor 350P), the 2nd optical sensor of the irradiation of the outer light of quilt blocking is (in embodiment, be shading sensor 350D), overlook the 1st electrode that consists of overlappingly with aforementioned the 1st optical sensor (in embodiment by insulation course, be backlight shading electrode 611P, transparency electrode 612P), overlook the 2nd electrode that consists of overlappingly with aforementioned the 2nd optical sensor (in embodiment by insulation course, be backlight shading electrode 611D, transparency electrode 612D), with to the current potential of aforementioned the 1st electrode (in embodiment, for the wiring PBT current potential VPBT (in embodiment, be 3.6V)) with the current potential of aforementioned the 2nd electrode (in embodiment, for the wiring DBT current potential VDBT (in embodiment, be 1.4V)) the current potential applying unit (in embodiment, being self-correcting potential circuit 361) controlled.

And, more specifically, aforementioned current potential applying unit so that the photoelectricity flow of the aforementioned the 1st and/or the 2nd optical sensor substantially become maximal value ground to the aforementioned the 1st and/or the current potential of the 2nd electrode control.

And more specifically, the aforementioned the 1st or the 2nd substrate possesses the transistor (in embodiment, being the 6th N-type transistor N11, the 6th P transistor npn npn P11, the 7th N-type transistor N21, the 7th P transistor npn npn P21) that is formed on the aforesaid base plate; Aforementioned current potential applying unit, by aforementioned transistorized threshold voltage (in embodiment, being Vth) to put on the aforementioned the 1st and/or the current potential of the 2nd electrode control.

The present invention is semiconductor devices, and it is formed on the substrate; Possess: by the 1st optical sensor that outer light shone (in embodiment, for being subjected to optical sensor 350P), the 2nd optical sensor of the irradiation of the outer light of quilt blocking is (in embodiment, be shading sensor 350D), overlook the 1st electrode that consists of overlappingly with aforementioned the 1st optical sensor (in embodiment by insulation course, be backlight shading electrode 611p, transparency electrode 612P), overlook the 2nd electrode that consists of overlappingly with aforementioned the 2nd optical sensor (in embodiment by insulation course, be backlight shading electrode 611D, transparency electrode 612D), with to aforementioned the 1st electrode and aforementioned the 2nd electrode applies so that the photoelectricity flow of aforementioned the 1st optical sensor and/or the 2nd optical sensor becomes peaked current potential substantially (in embodiment, for the wiring PBT current potential VPBT (in embodiment, be 3.6V) with the wiring DBT current potential VDBT (in embodiment, be 1.4V)) current potential applying unit (in embodiment, being self-correcting potential circuit 361).

Although having now makes the current potential of aforementioned the 1st electrode identical with the current potential of aforementioned the 2nd electrode, typically make it to become to float, or make it to be connected in the GND of assembly, but by as consist of the thermocurrent that can make the 1st optical sensor and the 2nd optical sensor above-mentionedly and become and equally make the current potential optimization.

And, more specifically, preferably: aforementioned the 1st optical sensor is (in embodiment, be 350P) be that photodiode is (in embodiment, be 350P-1), aforementioned the 2nd optical sensor (in embodiment, being 350D) is photodiode (in embodiment, being 350D-1); If establish the cathode electrode of aforementioned the 1st optical sensor (in embodiment, be 350P-1N) with the 1st electrode (in embodiment, be backlight shading electrode 611P, transparency electrode 612P) potential difference (PD) is V1, if the cathode electrode of aforementioned the 1st optical sensor is (in embodiment, be 350P-1N) with the anode electrode of the 1st optical sensor (in embodiment, be 350P-1P) potential difference (PD) be VD1, if the cathode electrode of aforementioned the 2nd optical sensor is (in embodiment, be 350D-1N) with the 2nd electrode (in embodiment, be backlight shading electrode 611D, transparency electrode 612D) potential difference (PD) is V2, if the cathode electrode of aforementioned the 2nd optical sensor is (in embodiment, be 350D-1N) with the anode electrode of the 2nd optical sensor (in embodiment, be 350D-1P) potential difference (PD) be VD2, then | V1-V2|＜| VD1| and | V1-V2|＜| VD2|, more preferably | V1-V2|＜1V.

By so current potential being set, can substantially ignore the difference of the thermocurrent of the 1st optical sensor and the 2nd optical sensor.

And then V1=0V is also proposed, V2=0V, V1=VD1, the semiconductor devices of any of V2=VD2.Namely by to the cathode electrode of the 1st optical sensor, source electrode, anode electrode, drain electrode any and the 1st electrode, or the cathode electrode of the 2nd optical sensor, source electrode, anode electrode, drain electrode any be connected with the 2nd electrode, can make the difference elimination of the thermocurrent of the 1st optical sensor and the 2nd optical sensor, and make the wiring number become bottom line.

At this, in the present invention, semiconductor devices is proposed, wherein so-called the 1st electrode is that light is carried out the 1st shading electrode of shading (in embodiment, be backlight shading electrode 611P), so-called the 2nd electrode is the 2nd shading electrode (in embodiment, being backlight shading electrode 611D) that light is carried out shading; Reaching so-called the 1st electrode is the 1st transparency electrode (in embodiment, being transparency electrode 612P) of light not being carried out shading, and so-called the 2nd electrode is the 2nd transparency electrode (in embodiment, being transparency electrode 612D) of light not being carried out shading; And so-called the 1st electrode is for the 1st shading electrode that light is carried out shading and the 1st transparency electrode of light not being carried out shading, and the 2nd electrode is for the 2nd shading electrode that light is carried out shading and the 2nd transparency electrode of light not being carried out shading.

When make so to the light from unnecessary direction carry out the shading electrode of shading, when making light from incident direction carry out transmission and the transparency electrode that works as the electromagnetic noise shielding device and optical sensor overlaid, if as current potential is set aforementionedly, accuracy of detection is reduced.

And then the present invention, semiconductor devices is proposed, wherein, between aforementioned the 1st shading electrode and aforementioned the 2nd shading electrode, be formed with the shading electrode gap zone that does not form the shading electrode, be formed with the gap occulter of non-transparency in the zone with aforementioned shading electrode gap region overlapping.

Must shading electrode gap zone be set at the shading electrode for the 1st shading electrode and the 2nd shading electrode being applied minute other current potential even so, but from this gap, the light of backlight carries out incident, and cause multiple scattering and become parasitic light with glass, dielectric surface, if it is incident in the 1st optical sensor or the 2nd optical sensor then makes accuracy of detection descend.

So by forming the gap occulter of non-transparency with the zone of shading electrode gap region overlapping, can the light that enter to shine from shading electrode gap zone be absorbed with the gap occulter, precision reduces and avoid so.

And then the present invention, following semiconductor devices is proposed: wherein, between aforementioned the 1st shading electrode and aforementioned the 2nd shading electrode, exist the shading electrode gap zone that does not form the shading electrode (in embodiment, be 611G), between aforementioned the 1st transparency electrode and aforementioned the 2nd transparency electrode, exist and do not form the transparency electrode gap area of transparency electrode (in embodiment, be 612G), aforementioned shading electrode gap zone forms on the vertical of aforesaid base plate without overlapping with aforementioned transparency electrode gap area.

In shading electrode, transparency electrode shading electrode gap zone, transparency electrode gap area must be set respectively in order to apply minute other current potential even so, if but electromagnetic noise enters the accuracy of detection that then makes sensor to descend from these gaps.

If therefore aforementioned shading electrode gap zone is configured without overlapping with aforementioned transparency electrode gap area, then because arbitrary electrode can both shield the electromagnetic noise that enters from gap separately, so be compared to the situation that aforementioned shading electrode gap zone and aforementioned transparency electrode gap area is formed at identical position, precision improves.

And then the present invention, propose following semiconductor devices: aforementioned the 1st shading electrode and aforementioned the 1st transparency electrode are same current potential, aforementioned the 2nd shading electrode and aforementioned the 2nd transparency electrode are same current potential.

If take so to consist of, then because can put on the current potential of shading electrode and transparency electrode with same wiring supply, so can save wiring number, installation end subnumber, circuit area.And because the total capacitance of shading electrode and transparency electrode becomes large, electromagnetic wave shielding improves.

And in the present invention, propose following semiconductor devices: aforementioned current potential applying unit possesses the self-correcting potential circuit that consists of by transistor, aforementioned self-correcting circuit output consists of corresponding to the voltage ground that aforementioned transistorized threshold voltage changes, and aforementioned output is connected in aforementioned the 1st electrode and/or aforementioned the 2nd electrode.

Because it is inconsistent to obtain the manufacturing of best current potential of the shading electrode of photocurrent or transparency electrode, with be formed with in the transistorized situation with semiconductor device, the manufacturing of transistorized threshold voltage (Vth) is inconsistent has a correlativity, if so adopt the self-correcting potential circuit of exporting the voltage that changes corresponding to transistorized threshold voltage, manufacturing is inconsistent also can always to put on shading electrode or transparency electrode with best current potential even then exist.

And the present invention is characterized as: aforementioned the 1st optical sensor and aforementioned the 2nd optical sensor are PIN junction diode or the PN junction diode that has adopted membrane polysilicon.

Diode even so has advantages of: what can need not to make be formed on the semiconductor devices that has adopted polycrystalline SiTFT with appending operation, but thermocurrent is with respect to the ratio of photocurrent, larger than the light sensor class that is formed on the single-crystal wafer, and owing to by overlooking the current potential that overlapping electrode applies thermocurrent is easily changed, be fit to use the present invention.

And the present invention, be electro-optical device, it possesses has: the clamping electro-optical substance is (in embodiment between the 1st and the 2nd substrate, be nematic liquid crystal material 922) the panel that is formed with the viewing area (in embodiment, be liquid crystal panel 911), the optical detection part that detects with illumination to the ambient light of aforementioned panel (in embodiment, for testing circuit 360, be subjected to optical sensor 350P and other); Aforementioned optical detection part is arranged at the aforementioned viewing area circumference of the aforementioned the 1st or the 2nd substrate; Possess: by the 1st optical sensor (being subjected to optical sensor 350P) that outer light shone, and by the 2nd optical sensor (in embodiment, being shading sensor 350D) of the irradiation of the outer light of blocking; Aforementioned the 1st optical sensor and aforementioned the 2nd optical sensor are a plurality of in the configuration of aforementioned viewing area circumference.

Be configured if so, then can prevent owing to finger, little shade changes testing result significantly, and prevent owing to resulting from the precision of the poor generation of thermocurrent of the Temperature Distribution in the device and reduce.

And the present invention is following electro-optical device: possess to the light source (in embodiment, being backlight unit 926) of the viewing area irradiation light of aforementioned panel; Aforementioned light source at the viewing area circumference, is disposed at the limit that does not configure aforementioned the 1st optical sensor and the 2nd optical sensor.

Consist of if so, then because can make because aforementioned the 1st optical sensor that the thermograde of light source causes and the difference of the thermocurrent between aforementioned the 2nd optical sensor diminish as far as possible, so can eliminate accurately thermocurrent.

And the present invention, the electro-optical device that configures alternately with each other for aforementioned the 1st optical sensor and aforementioned the 2nd optical sensor.

Be configured if so, even then in display device, there is Temperature Distribution, also because in the medial temperature of the 1st optical sensor and the 2nd optical sensor, there is no large difference, so can eliminate more accurately thermocurrent.

And the present invention, be electro-optical device, it is characterized by: aforementioned the 1st optical sensor and aforementioned the 2nd optical sensor adjacent to its ground configuration, the distance of boundary edge (in embodiment, being the dotted line of the boundary edge of expression viewing area 310) of leaving mutually aforementioned viewing area is substantially equal.

Be configured if so, then because because shining equably at the 1st optical sensor and the 2nd optical sensor with the so-called parasitic light that the interface institute multipath reflection of glass substrate, dielectric film produces from the light of viewing area, so can not produce the precision reduction that causes owing to parasitic light by the difference between current of getting the 1st optical sensor and the 2nd optical sensor.

And the present invention is electro-optical device, it is characterized by: be used in to aforementioned the 1st optical sensor shine the ambient light of aforementioned panel and a plurality of peristomes of being arranged at the 1st or the 2nd substrate (in embodiment, for being subjected to the size of light peristome 990-1～990-10), form: be scope more than the 0.5mm and below the 20mm in the direction parallel with the boundary edge of the viewing area circumference that disposes aforementioned peristome, and be more than the 0.05mm and for below the thickness of aforementioned subtend substrate in the direction with the boundary edge phase quadrature of the aforementioned viewing area circumference that disposes aforementioned peristome.

Set if so peristome, then the thermocurrent of the Temperature Distribution in the device is poor also diminishes because parasitic light reduces, results from, and reduces so can prevent precision.

And the present invention, be electro-optical device, it is characterized by: aforementioned a plurality of peristomes, at aforementioned viewing area circumference, possess: be disposed at subtend in the 1st peristome on the limit on the configuration limit that disposes aforementioned light source (in embodiment, for being subjected to light peristome 990-1～990-6), and the 2nd peristome that is disposed at the limit that substantially is orthogonal to the configuration limit is (in embodiment, for being subjected to light peristome 990-7～990-10); The aperture area of aforementioned the 1st peristome is larger than aforementioned the 2nd aperture area.

And, thermograde because of the different situation in the configuration position of peristome under, if the more less impact that then can reduce thermograde of size of ambassador's peristome of thermograde.More specifically, among the four edges of aforementioned viewing area close to the limit of aforementioned the 1st peristome with close to the mutually different display device in the limit of aforementioned the 2nd peristome.The limit that thermograde is larger is as long as make the size of peristome less.

And the present invention has proposed to adopt the display device of these semiconductor devices.Thus, manufacturing cost can not raise, and the temperature dependency that is arranged at the light sensor on the display device is improved, and can carry out the display setting corresponding to the outer reticle circle border temperature independently, and the allocation position of light sensor also can be in close proximity to the viewing area.

And propose to have adopted in the present invention the electronic equipment of these display device.Thus, for example at the static camera of numeral, portable telephone, PDA (Personal Digital Assistant, personal digital assistant) etc. in the electronic equipment, because built-in temperature independent high-precision optical sensor, so easily can backlight be controlled corresponding to outer light, power consumption is increased without meaning, and cost can not raise yet.And, because can near the viewing area, configure light sensor, so the degree of freedom of design also increases.

Description of drawings

Fig. 1 is the stereographic map of the liquid crystal indicator 910 in the embodiments of the invention.

Fig. 2 is the pie graph of the active-matrix substrate 101 among the 1st embodiment of the present invention.

Fig. 3 is the image element circuit figure of the active-matrix substrate 101 in the embodiments of the invention.

Fig. 4 is the block diagram of the embodiment of expression electronic equipment of the present invention.

Fig. 5 is the vertical view of the pixel section of the active-matrix substrate 101 in the embodiments of the invention.

Fig. 6 is the sectional view along Fig. 5 A-A '.

Fig. 7 is the sectional view along Fig. 5 B-B '.

Fig. 8 is the vertical view that is subjected to optical sensor 350P-1, shading sensor 350D-1 among the 1st embodiment of the present invention.

Fig. 9 is the sectional view along Fig. 8 C-C '.

Figure 10 is the sectional view along Fig. 8 D-D '.

Figure 11 is the equivalent circuit diagram that is subjected to optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6 among the 1st embodiment of the present invention.

Figure 12 be among the 1st embodiment of the present invention the simplification that is subjected to optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6 equivalent circuit diagram.

Figure 13 is the curve map that expression consists of the characteristic of the PIN diode that is subjected to optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6 among the 1st embodiment of the present invention.

Figure 14 is the circuit diagram of the testing circuit 360 among the 1st embodiment of the present invention.

Figure 15 is the electric current of the PIN diode among the 1st embodiment of the present invention and the curve map of shading electrode-cathodic electricity electrode potential.

Figure 16 is the thin film transistor (TFT) of expression in the embodiments of the invention and the distribution plan of the characteristic correlativity of PIN diode.

Figure 17 is the circuit diagram of the 2nd self-correcting potential circuit 361 ' in other configuration example of the 1st embodiment of the present invention.

Figure 18 is the detection illumination of the exterior light among the embodiment among the present invention and the setting figure of backlight briliancy.

Figure 19 is the setting figure for detection illumination and the backlight briliancy of the exterior light of semi-transmissive liquid crystal display device.

Figure 20 is the stereographic map of the liquid crystal indicator 910B among the 2nd embodiment of the present invention.

Figure 21 is the block diagram of the active-matrix substrate 101B among the 2nd embodiment of the present invention.

Figure 22 is the circuit diagram of the testing circuit 362 among the 2nd embodiment of the present invention.

Figure 23 is the vertical view that is subjected to optical sensor 351P-1, shading sensor 351D-1 among the 2nd embodiment of the present invention.

Figure 24 is the electric current of the PIN diode among the 2nd embodiment of the present invention and the curve map of shading electrode-cathodic electricity electrode potential.

Figure 25 is the vertical view that is subjected to optical sensor 351P-1, shading sensor 351D-1 in other configuration examples of the 2nd embodiment of the present invention.

Symbol description

101,101B... active-matrix substrate (" the 1st substrate " of the present invention, one example of " semiconductor devices "), 102... extension, 201-1～201-480... sweep trace, 202-1～202-1920... data line, 301... scan line drive circuit, 302... data line drive circuit, 320... signal input terminal, 330-1～330-2... subtend conducting portion, 335... common potential wiring, 350P-1～350P-6,351P-1～351P-6... is subjected to optical sensor (example of " the 1st optical sensor " of the present invention), 350D-1～350D-6,351D-1～351D-6... shading sensor (example of " the 2nd optical sensor " of the present invention), 360,362... testing circuit (example of " optical detection part " of the present invention), 361,361 ' ... self-correcting potential circuit (example of " current potential applying unit " of the present invention), 611P, 611P-1～611P-6,611D, (611P is " the 1st electrode " of the present invention to 611D-1～611D-6... backlight shading electrode, 611D is an example of " the 2nd electrode " of the present invention), 612P, 612P-1～612P-6,612D, (612P is " the 1st electrode " of the present invention to 612D-1～612D-6... transparency electrode, 612D is an example of " the 2nd electrode " of the present invention), 781... central operation circuit, 784... external power source circuit, 910... liquid crystal indicator, 911... liquid crystal panel (example of " panel " of the present invention), 912... subtend substrate (example of " the 2nd substrate " of the present invention), 922... nematic liquid crystal material, 923... encapsulant, 926... backlight unit, 927... light guide plate, 940... black matrix, 990-1～990-6... is subjected to the light peristome, VPBT... the current potential (example of " current potential of the 1st electrode " of the present invention) of PBT connects up, VDBT... the current potential (example of " current potential of the 2nd electrode " of the present invention) of DBT connects up, LA... outer light, LB... backlight light.

Embodiment

Below, about the electro-optical device among the present invention, semiconductor devices, display device and possess the embodiment of its electronic equipment, describe based on accompanying drawing.

The 1st embodiment

Fig. 1 is the three-dimensional composition figure (fragmentary cross-sectional view) of the liquid crystal indicator 910 in the present embodiment.Liquid crystal indicator 910 possesses: make active-matrix substrate 101 and subtend substrate 912 by encapsulant 923 with certain interval fits, clamping has nematic phase liquid crystal material 922 liquid crystal panel 911.Although on active-matrix substrate 101, illustrate, the oriented material that coating is made of polyimide etc., carry out friction treatment and be formed with alignment films.And, subtend substrate 912, although illustrate, but be formed with: corresponding to the color filter of pixel, by being used for preventing light leak, the make contrast low reflection that improves, the black matrix 940 that the low transmissivity resin consists of, and with active square fall subtend conducting portion 330-1 on the substrate 101～330-2 short circuit be supplied to common potential by the film formed counter electrode 930 of ITO.At the oriented material that is consisted of by polyimide etc. with 922 contacted coatings of nematic liquid crystal material, be implemented friction treatment in the direction with the direction phase quadrature of the friction treatment of the alignment films of active-matrix substrate 101.

And then in the outside of subtend substrate 912, the outside of active-matrix substrate 101, configure respectively upper deflection board 924, lower polarizing plate 925, and mutual polarization direction mutually orthogonally (cross Nicol shape) be configured.And then lower polarizing plate 925 times, configuration backlight unit 926 and light guide plate 927, shine light from backlight unit 926 towards light guide plate 927, light guide plate 927 by make from the light of backlight unit 926 towards active-matrix substrate 101 become vertical and uniform area source make light reflect bending, and work as the light source of liquid crystal indicator 910.Backlight unit 926 although be the LED unit in the present embodiment, also can be cold-cathode tube (CCFL).Although backlight unit 926 is connected in the electronic equipment main body by connector 929, is supplied to power supply, has the function of adjusting from the light quantity of backlight unit 926 by power supply being adjusted into suitable appropriate electric current, voltage in the present embodiment.

Although illustrate, and then as required, around both can having covered with shell, glass, the acrylic panel of protection usefulness can be installed on upper deflection board 924 also perhaps, can also attach for field angle improves optical compensation films.

And, at the peripheral part of liquid crystal indicator 910 optical sensor is set and is subjected to light peristome 990.And active-matrix substrate 101 is provided with the extension 102 that stretches out from subtend substrate 912, to the signal input terminal 320 that is in this extension 102, FPC (flexible base, board) 928 is installed and is electrically connected.FPC (flexible base, board) 928 is connected in the electronic equipment main body, supplies with essential power supply, control signal etc.

And then be subjected to light peristome 990-1～990-6 what liquid crystal indicator 910 arranged 6 optical sensors.This black matrix 940 that removed on the counter electrode 930 by part by light peristome 990-1～990-6 forms, so that outside light arrives on the active-matrix substrate 101.Respectively be subjected to light peristome 990-1～990-6 around do not remove black matrix 940 on the counter electrode 930 so that outer light can not arrive on the active-matrix substrate 101.

Fig. 2 is the block diagram of active-matrix substrate 101.On active-matrix substrate 101,480 sweep trace 201-1～201-480 form with 1920 data line 202-1～202-1920 phase quadrature, and 480 electric capacity line 203-1～203-480 and sweep trace 201-1～201-480 configure concurrently.The mutual short circuit of electric capacity line 203-1～203-480 is connected with common potential wiring 335, and then to be connected with 2 subtend conducting portion 330-1～330-2 and to be provided the inversion signal of 0V～5V, anti-phase time from signal input terminal 320 be the common potential of 35 microseconds.Sweep trace 201-1～201-480 is connected in scan line drive circuit 301, and data line 202-1～202-1920 is connected in data line drive circuit 302, and is suitably driven respectively.

And scan line drive circuit 301, data line drive circuit 302 are supplied to from signal input terminal 320 and drive necessary signal.Signal input terminal 320 is disposed on the extension 102.On the other hand, scan line drive circuit 301, data line drive circuit 302 are disposed at the zone overlapping with subtend substrate 912, are outside the extension 102.Scan line drive circuit 301, data line drive circuit 302, by by low temperature polycrystalline silicon TFT technique (SOG of system on glass of essential circuit function in the integrated driving on active-matrix substrate, System On Glass) technology, form by integrated polycrystalline SiTFT on active-matrix substrate, with with the same operation manufacturing of pixel switch element 401-n-m described later, become the liquid crystal indicator of so-called driving circuit internally-arranged type.

And with 6 be subjected to light peristome 990-1～990-6 to overlook overlapping zone to form respectively 6 and be subjected to optical sensor 350P-1～350P-6, alternately form 6 shading sensor 350D-1～350D-6 with it.This is subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6 also by system on glass (SOG) technology, is formed on the active-matrix substrate.By so on glass substrate to make with the same operation of pixel switch element 401-n-m, can reduce manufacturing cost.

Although outer light arrives in sensor with being subjected to light peristome 990-1～990-6 to overlook overlapping to be subjected to optical sensor 350P-1～350P-6, with overlooked by light peristome 990-1～990-6 overlapping, but outer light is not absorbed with the black matrix 940 on the counter electrode 930 and can be arrived hardly shading sensor 350D-1～350D-6.Be connected with wiring PBT, wiring VSH, wiring SENSE by optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6 is connected with wiring DBT, wiring VSL, wiring SENSE.These wirings PBT, wiring VSH, wiring SENSE, wiring DBT, wiring VSL are connected in testing circuit 360.Testing circuit 360 is transformed into corresponding to having the two value output signal OUT of pulse length of the output analog current of correlativity from what be subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6 with outer illuminance, and exports to signal input terminal 320.And wiring VCHG, wiring RST, wiring VSL, wiring VSH also are supplied in testing circuit 360 by signal input terminal 320.

The details aftermentioned, constitute, be subjected to optical sensor 350P-1～350P-6 and backlight shading electrode 611P-1～611P-6, shading sensor 350D-1～350D-6 and backlight shading electrode 611D-1～611D-6 overlook respectively overlapping, because cover respectively the light from backlight, beyond the accuracy of detection of light can not descend owing to the light from backlight.And, be subjected to optical sensor 350P-1～350P-6 and transparency electrode 612P-1～612P-6, shading sensor 350D-1～350D-6 and transparency electrode 612D-1～612D-6 are also overlapping, so that accuracy of detection can be owing to (dotted line represents the boundary edge of viewing area 310 to viewing area 310 yet.) electromagnetic noise that produces when driving and descending.By these formations, even because be disposed near the viewing area 310 by optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6, accuracy of detection can not descend yet, so the degree of freedom of design increases than existing product.

About being subjected to light peristome 990-1～990-6 as being shown in the present embodiment ground, preferably be divided into a plurality ofly at this, and be scattered in broad scope as far as possible and be configured.Even if such as on the dash area ground covering liquid crystal device 910 of considering finger etc., also reduce the impact that external light detects, then preferably be subjected to the total area of light peristome as far as possible broad, if but because make the large optical sensor that is subjected to of area concentrate on a place, then have to make the distance of itself and shading sensor to be left, can be in liquid crystal indicator 910 interior generation Temperature Distribution, so be subjected to optical sensor section and shading sensor section to produce mean temperature difference.Therefore such as the present embodiment ground sensor is divided into several, and and then preferably alternately be configured, then can make substantially equated with the medial temperature of shading sensor section by optical sensor section.Although be divided in the present embodiment 6, much less both can lack than this, also can be more than this.

And this moment, 310 distance equally is configured gets final product.Make similarly that 310 distance equally is configured and gets final product to the viewing area from respectively being subjected to optical sensor 350P-1～350P-6, each shading sensor 350D-1～350D-6.Although 310 be used for to show that to the outside light of institute's transmission is for example to consist of active-matrix substrate 101 from the viewing area, the glass of subtend substrate 912, the surface of upper deflection board 924, institute's Multi reflections such as the interface of various dielectric films, part parasitic light enters each optical sensor, but this moment, if because as be configured above-mentionedly, then respectively be subjected to optical sensor 350P-1～350P-6, between each shading sensor 350D-1～350D-6, the light quantity of parasitic light is substantially certain, if so get the amount that respectively is subjected to the difference between current between optical sensor 350P-1～350P-6 and each shading sensor 350D-1～350D-6 such as the present embodiment ground, then can substantially remove the amount of parasitic light.From this viewpoint, if also because be divided into by light peristome 990-1～990-6 a plurality of, and are scattered in broad range as far as possible and are configured, then becoming is difficult to have influence on the display graphics of viewing area 310, so preferred.

And, preferred: respectively be subjected to optical sensor 350P-1～350P-6, each shading sensor 350D-1～350D-6 as be disposed at with being shown in the present embodiment with backlight unit 926 try one's best away from the limit.This is because following cause: because backlight unit 926 is no matter be that LED or CCFL become thermal source, so more close to backlight unit 926, become larger in active-matrix substrate 101 interior thermal gradients, respectively be subjected to temperature difference more easily to occur between optical sensor 350P-1～350P-6, each shading sensor 350D-1～350D-6.

And, about being subjected to the size of light peristome 990-1～990-6, if become large in the direction of the boundary edge that is parallel to the circumference that disposes this viewing area 310 that is subjected to light peristome 990-1～990-6 (below, be called directions X), then be subjected to the impact of Temperature Distribution, parasitic light.And, if about the direction of the boundary edge that is orthogonal to viewing area 310 (below, be called Y-direction) become large, then architrave zone become large and except the physical dimension of liquid crystal indicator 910 become large, the light of the viewing area 310 of being reflected with subtend substrate 912 and the interface of upper deflection board 924 is as parasitic light, acute irradiation becomes the reason of error at measurment in respectively being subjected to optical sensor 350P-1～350P-6, each shading sensor 350D-1～350D-6.On the other hand, if about the directions X too little then allocative efficiency step-down that becomes, the channel width of PIN diode (W) diminishes; If about the diminish deterioration of efficiency that is taken into of light then of Y-direction, accuracy of detection is exerted an influence.Based on the result that as above condition is studied, having drawn is 0.5mm～20mm about directions X preferably, is the conclusion in the scope of thickness of slab (being in the present embodiment 0.6mm) of 0.05mm～subtend substrate 912 about Y-direction.According to more than, be of a size of in the present embodiment: directions X is set as 10mm, Y-direction is set as 0.3mm.

And 310 distance is 0.5mm from the end that is subjected to light peristome 990-1～990-6 to the viewing area.

The disposition interval that is subjected to light peristome 990-1～990-6 is 20mm, and making and being subjected to the spacing of optical sensor 350P-1 and shading sensor 350D-1 is 10mm, the spacing of shading sensor 350D-1 is 10mm ground also with the spacing that is subjected to optical sensor 350P-2, alternately configured with the 10mm spacing by optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6.

Fig. 3 is with near the circuit diagram the cross part of the m bar data line 202-m of the viewing area of 310 expressions of dotted line of Fig. 2 and n bar sweep trace 201-n.Each intersection point place at sweep trace 201-n and data line 202-m forms the pixel switch element 401-n-m that is made of N channel-type field effect polycrystalline SiTFT, its gate electrode is connected in sweep trace 201-n, and source, drain electrode are connected to data line 202-m and pixel electrode 402-n-m.With the electrode of pixel electrode 402-n-m and same current potential short circuit, form auxiliary capacitor 403-n-m with electric capacity line 203-n, and when assembling as liquid crystal indicator, holding liquid crystal element and also form capacitor with counter electrode 930 (common electrode).

Fig. 4 is the block diagram of concrete formation of the electronic equipment of expression the present embodiment.Liquid crystal indicator 910 is the liquid crystal indicators that are illustrated with Fig. 1, and external power source circuit 784, image processing circuit 780 are supplied in liquid crystal indicator 910 by FPC (flexible base, board) 928 and connector 929 with essential signal and power supply.Central operation circuit 781 is obtained input data from input-output device 783 by exterior I/F circuit 782.At this so-called input-output device 783 such as being keyboard, mouse, trace ball, LED, loudspeaker, antenna etc.Central operation circuit 781 carries out various calculation process based on the data from the outside, and the result is transmitted to image processing circuit 780 or exterior I/F circuit 782 as instruction.

Image processing circuit 780 is based on upgrading image information from the instruction of central operation circuit 781, and changes by the signal of subtend liquid crystal indicator 910, and the demonstration image of liquid crystal indicator 910 changes.And, two value output signal OUT from the testing circuit 360 on the liquid crystal indicator 910 are input to central operation circuit 781 by FPC (flexible base, board) 928, and central operation circuit 781 is transformed into corresponding discrete value with the pulse length of two value output signal OUT.Then 781 access of central operation circuit are by EEPROM (Electronically Erasable andProgrammable Read Only Memory, Electrically Erasable Read Only Memory) consist of with reference to table 785, and the discrete value that will carry out conversion is transformed into the value of suitable voltage corresponding to backlight unit 926 again, and sends to external power source circuit 784.External power source circuit 784 will be supplied in backlight unit 926 in the liquid crystal indicator 910 by connector 929 corresponding to the current potential power supply of the voltage of this value of sending.Because the briliancy of backlight unit 926 changes according to the voltage supplied with from external power source circuit 784, so briliancy also changes during complete white demonstration of liquid crystal indicator 910.Be in particular monitor, TV, notebook personal computer, PDA, digital camera, video camera, portable telephone, portable photo browser, portable video player, portable dvd player, portable audio player etc. at this so-called electronic equipment.

Also have, although control by the briliancy of the 781 pairs of backlight units 926 of central operation circuit on the electronic equipment in the present embodiment, but also can be for example in liquid crystal indicator 910, to possess the formation that drive IC and EEPROM are arranged, and make this drive IC have mapping function from from two value output signal OUT to discrete value, with reference to the adjustment function of the output voltage of the again mapping function of EEPROM, subtend backlight unit 926.And, also can be without reference table, consist of from the value ground that discrete value is transformed into corresponding to the voltage of backlight unit 926 again by numerical evaluation.

Fig. 5 is that expression is with the vertical view of the formation of the reality of the circuit diagram of the image display area shown in Fig. 3.As being shown in the note on the use ground of Fig. 5, the different position of each reticulate pattern is expressed as different respectively material wirings, is expressed as identical material wiring with the position shown in the identical reticulate pattern.5 layer films by chromium thin film (Cr), polysilicon membrane (Poly-Si), molybdenum film (Mo), aluminium neodymium alloy film (AlNd), indium tin oxide films (Indium Tin Oxiced=ITO) are consisted of, form at separately interlayer monox, silicon nitride, organic insulating film any or lamination their dielectric film.

Chromium thin film (Cr) thickness is that 100nm, polysilicon membrane (Poly-Si) thickness are that 50nm, molybdenum film (Mo) thickness are that 200nm, aluminium neodymium alloy film (AlNd) thickness are that 500nm, indium tin oxide films (ITO) thickness are 100nm particularly.And; forming lamination between chromium thin film (Cr) and polysilicon membrane (Poly-Si) has the underlying insulation film of the silicon oxide film of the silicon nitride film of 100nm and 100nm; between polysilicon membrane (Poly-Si) and molybdenum film (Mo), form the gate insulating film that the silicon oxide film by 100nm consists of; forming lamination between molybdenum film (Mo) and aluminium neodymium alloy film (AlNd) has the interlayer dielectric of the silicon oxide film of the silicon nitride film of 200nm and 500nm; forming lamination between aluminium neodymium alloy film (AlNd) and indium tin oxide films (ITO) has the protection dielectric film of organic planarization film of the silicon nitride film of 200nm and average 1 μ m; make between mutual wiring and insulate, offer contact hole in position and be connected to each other.Also have, in Fig. 5, do not have chromium thin film (Cr) figure.

As show ground with Fig. 5, data line 202-m forms by aluminium neodymium alloy film (AlNd), is connected in the source electrode of pixel switch element 401-n-m by contact hole.Sweep trace 201-n is consisted of with molybdenum film (Mo), is also used as the gate electrode of pixel switch element 401-n-m.Electric capacity line 203-n is made of the wiring material identical with sweep trace 201-n, and pixel electrode 402-n-m is made of indium tin oxide films, is connected in the drain electrode of pixel switch element 401-n-m by contact hole.And the drain electrode of pixel switch element 401-n-m also is connected in the capacitance part electrode 605 of mixing the n+ type polysilicon membrane formation of phosphorus by high concentration, overlooks overlapping with electric capacity line 203-n and formation auxiliary capacitor 403-n-m.

Fig. 6 is that the expression that describes for the structure to pixel switch element 401-n-m is corresponding to the figure of the cross-section structure of the part of the liquid crystal indicator 910 of A-A ' the line part of Fig. 5.Also have, easily see in order to make figure, engineer's scale is unfixing.Active-matrix substrate 101 is the insulated substrate of the thickness 0.6mm that is made of alkali-free glass, there is the underlying insulation film of the silicon oxide film of the silicon nitride film of 200nm and 300nm to configure the silicon island (silicon island) 602 that is consisted of by polysilicon membrane by lamination thereon, sweep trace 201-n and the aforesaid gate insulating film of silicon island 602 clampings and be disposed at the top.

With the equitant zone of sweep trace 201-n in, silicon island 602 is not for mixing or only mix the intrinsic semiconductor region 602I of the phosphonium ion of extremely low concentration fully, about it, exist low concentration ground mix n-zone 602L that the thin layer of phosphonium ion (sheet) resistance is 20k Ω degree, and and then the sheet resistance that about it, exists high concentration ground to mix phosphonium ion be the n+ zone 602N of 1k Ω degree, it is LDD (Lightly Doped Drain, lightly doped drain) structure.About n+ zone 602N be connected with source electrode 603, drain electrode 604 by the contact hole that is formed at respectively interlayer dielectric, source electrode 603 with data line 202-m, drain electrode 604 and the pixel electrode 402-n-m on being formed at planarization insulating film be connected respectively.Between the counter electrode 930 on pixel electrode 402-n-m and the subtend substrate 912, there is nematic liquid crystal material 922.And black matrix 940 is formed on the subtend substrate 912 overlappingly with a pixel electrode 402-n-m part.Also have, become in the situation of problem at the light leakage current of pixel switch element 401-n-m, also can be in the silicon island form the light shield layer that is consisted of by the Cr film 602 times.Because the light leakage current is not problem basically in the present embodiment, and if take so structure, then the mobility of pixel switch element 401-n-m descends, so selected to remove the formation of the Cr film under the silicon island 602.

Fig. 7 is that the expression that describes for the structure to auxiliary capacitor 403-n-m is corresponding to the figure of the cross-section structure of the part of the liquid crystal indicator 910 of B-B ' the line part of Fig. 5, the capacitance part electrode 605 that is connected with drain electrode 604, overlapping with electric capacity line 203-n clamping gate insulating film, form thus memory capacitance.

Fig. 8 is near the amplification plan view that is subjected to optical sensor 350P-1 (the 1st optical sensor) with shading sensor 350D-1 (the 2nd optical sensor).Also have, easily see in order to make figure, vertically unfixing with horizontal engineer's scale.And the note on the use and Fig. 5 are same.Be subjected to optical sensor 350P-1 with represent with thick dashed line overlooked by light peristome 990-1 overlapping, make that outer light is illuminated to get on.Passed through by optical sensor 350P-1: the isolated light accepting part 350P-1I in 4 places, adjacent to its anode region 350P-1P that is connected in wiring SENSE, and the cathode zone 350P-1N that is connected in wiring VSH consists of.Light accepting part 350P-1I, anode region 350P-1P, cathode zone 350P-1N consist of according to the different separation of doping content by same polysilicon membrane Shimane, anode region 350P-1P mixes than the boron ion of higher concentration, cathode zone 350P-1N mixes than the phosphonium ion of higher concentration, and light accepting part 350P-11 only comprises boron ion, phosphonium ion with extremely low concentration.

And anode region 350P-1P, cathode zone 350P-1N, light accepting part 350P-1I width are respectively 10 μ m, and the length of light accepting part 350P-1I is respectively 1000 μ m.So, be subjected to optical sensor 350P-1 to consist of a plurality of PIN junction diodes that are connected in parallel.Although be subjected to optical sensor 350P-1 and shading sensor 350D-1 close to viewing area 310 sides configurations common potential wiring 335, but in the present embodiment and be not attached to and be subjected to optical sensor 350P-1 and shading sensor 350D-1, be used for avoiding the impact of electromagnetic noise and leave 100 μ m and be configured.

Shading sensor 350D-1 passes through: the isolated light accepting part 350D-1I in 4 places, adjacent to its anode region 350D-1P that is connected in wiring VSL, and the cathode zone 350D-1N that is connected in wiring SENSE consists of.Because except the wiring that connects negative electrode and positive electrode different, and not be subjected to light peristome 990-1 overlook overlapping beyond, being subjected to optical sensor 350P-1 and shading sensor 350D-1 is same formation, so explanation is in addition omitted.And because be subjected to optical sensor 350P-2～350P-5 and be subjected to optical sensor 350P-1, shading sensor 350D-2～350D-5 and shading sensor 350D-1 except allocation position difference difference, are same formation, so explanation is omitted.

Fig. 9 is for the figure of the expression that the structure that is subjected to optical sensor 350P-1 is described corresponding to the cross-section structure of the part of the liquid crystal indicator 910 of line C-C ' the line part of Fig. 8.By underlying insulation film configuration backlight shading electrode 611P-1 (the 1st shading electrode), the clamping gate insulating film forms by what membrane polysilicon consisted of and is subjected to optical sensor 350P-1 thereon on active-matrix substrate 101.Passed through by optical sensor 350P-1: the light accepting part 350P-1I at 4 places, adjacent to its be connected in the wiring VSL anode region 350P-1P, and be connected in the wiring SENSE cathode zone 350P-1N consist of, as previously mentioned.Be subjected to optical sensor 350P-1 above the transparency electrode 612P-1 (the 1st transparency electrode) that consisted of by indium tin oxide films (ITO) by the configuration of interlayer dielectric, planarization insulating film, as working for the electric field shielding film of light accepting part 350P-1I.

The top of transparency electrode 612P-1 is enclosed nematic phase liquid crystal material 922, disposes the counter electrode 930 on the subtend substrate 912.Also have, sometimes also configure encapsulant 923 according to the difference that is subjected to optical sensor 350P-1 allocation position and replace nematic liquid crystal material 922.The black matrix 940 that removed on the subtend substrate 912 by part by light peristome 990-1 forms.Though not shown, be not subjected to the light peristome because of on shading sensor 350D-1, not existing, so do not remove black matrix 940.

Become following formation: from the outer light LA of the top of subtend substrate 912 irradiation, on the other hand, shine the light (backlight light LB) from backlight unit 926 from the below of active-matrix substrate 101.Also have, although do not implement in the present embodiment, also can be subjected to light peristome 990-1 to put into the optical correction layer.For example also can be subjected to light peristome 990-1 overlapping and form to consist of be formed at subtend substrate 912 corresponding among the look material of the color filter of pixel one or several, make the visibility dichroism and be subjected to optical sensor 350P-1 more consistent.Be subjected to light peristome 990-1 upper and form look material corresponding to the pixel of green if for example be overlapped in, then because short wavelength and long wavelength side are clipped, even so compared to short wavelength or long wavelength shifted with the visibility dichroism by the dichroism of optical sensor 350P-1, also can proofread and correct.In addition, corresponding to purpose, antireflection film, interfering layer, polarizing layer etc. are carried out overlapping getting final product with being subjected to light peristome 990-1 section.And, although in this figure and not shown, upper deflection board 924 both can be subjected to light peristome 990-1 overlapping, also can remove.Be subjected to light peristome 990-1 to become not obvious during overlaid, luminous sensitivity can improve if remove then.

Because in the present embodiment for the low consumption electrification of liquid crystal indicator 910, carrying out applying to common potential wiring 335 the anti-phase driving of common electrode (sharing AC drives) of inversion signal, is that 0V～5V, frequency are the AC signal of 14KHz so counter electrode 930 is applied amplitude.But because the electromagnetic wave that is produced by counter electrode 930 is shielded by transparency electrode 612P-1, thus when counter electrode 930 is anti-phase substantially not to being subjected to optical sensor 350P-1 to apply noise.Similarly for the electromagnetic noise from the below, backlight shading electrode 611P-1 works as shielding device.

Figure 10 is that expression is corresponding to the figure of the cross-section structure of the part of the liquid crystal indicator 910 of line D-D ' the line part of Fig. 8.The backlight shading electrode 611P-1 (the 1st shading electrode) that is formed on the underlying insulation film is disconnected from each other by shading electrode gap 611G with backlight shading electrode 611D-1 (the 2nd shading electrode), is provided minute other current potential.And the transparency electrode 612P-1 (the 1st transparency electrode) that is formed on the planarization insulating film is also disconnected from each other by transparency electrode gap 612G with transparency electrode 612D-1 (the 2nd transparency electrode), is provided minute other current potential.Backlight shading electrode 611P-1 is connected with target 613P-1 by the contact hole that is formed at gate insulating film, interlayer dielectric and planarization insulating film mutually with transparency electrode 612P-1, finally is connected in wiring PBT.Backlight shading electrode 611D-1 is connected with target 613D-1 by the contact hole that is formed at gate insulating film, interlayer dielectric and planarization insulating film mutually with transparency electrode 612D-1, finally is connected in wiring DBT.

The non-overlapping copies on the vertical of active-matrix substrate 101 and subtend substrate 912 at this shading electrode gap 611G and transparency electrode gap 612G.Consist of if so, then because there is not up and down the zone that is shielded in plane earth, thus expansion about the electromagnetic noise that enters from the gap is difficult to, the reduction that can alleviate the shielding properties that is caused by the gap.

And, form with overlapping the gap occulter 610 that is consisted of by molybdenum film (Mo) with shading electrode gap 611G.Thus, can alleviate tremendously: the backlight light that enters by shading electrode gap 611G with the Multi reflections such as interface of various dielectric films, glass, become parasitic light and arrive in the ratio that is subjected to optical sensor 350P-1, shading sensor 350D-1.

Figure 11 is the equivalent circuit diagram that is subjected to optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6 such as above formation.Respectively be subjected to optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6,4 PIN diode are connected in parallel respectively.And, also be connected in parallel mutually by optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6 also is connected in parallel mutually.So circuit diagram equivalence of final Figure 11 and Figure 12.

That is, shading sensor 350D-1～350D-6 is that channel width is that 24000 μ m, channel length are the PIN diode of 10 μ m, and its anodic bonding is in wiring VSL, and its negative electrode is connected in wiring SENSE.And, overlook overlapping backlight shading electrode 611D-1～611D-6 and transparency electrode 612D-1～612D-6 with shading sensor 350D-1～350D-6 and be connected in wiring DBT.Being subjected to optical sensor 350P-1～350P-6 is that channel width is that 24000 μ m, channel length are the PIN diode of 10 μ m, and its anodic bonding is in wiring SENSE, and its negative electrode is connected in wiring VSH.And, and be subjected to optical sensor 350P-1～350P-6 to overlook overlapping backlight shading electrode 611P-1～611P-6 and transparency electrode 612P-1～612P-6 to be connected in wiring PBT.

Figure 13 is the curve map of the characteristic of the formation of expression when certain outer illuminance LX shines in liquid crystal indicator 910 PIN diode that is subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6.Transverse axis is bias potential Vd (=anode potential-cathode potential), and the longitudinal axis is the magnitude of current Id that circulates between anode-cathode.The curve (A) that represents take solid line is as being subjected to the characteristic of optical sensor 350P-1～350P-6, and the curve that is represented by dotted lines (B) is the characteristic of shading sensor 350D-1～350D-6.Although so the two is substantially consistent in forward bias zone (Id＞0), in reverse bias zone (Id＜0), become greatly by a side the absolute value of electric current of the curve (B) of optical sensor 350P-1～350P-6.This is because following reason: although because shading sensor 350D-1～350D-6 is not shone outer light, so only circulation results from the thermoelectric flow Ileak of temperature, if but because be subjected to the light accepting part 350P-1I of the PIN diode of optical sensor 350P-1～350P-6～350P-6I irradiation light then to generate charge carrier pair to formation, photoelectricity flow Iphoto circulation is so photoelectricity flow and thermoelectric flow sum, Iphoto+Ileak circulate in being subjected to optical sensor 350P-1～350P-6.At this, so-called thermoelectric flow Ileak refers in the reverse bias zone (Id＜0) in the left side of Figure 13, and the electric current that circulates when applying voltages to negative a few V, semiconductor are because temperature and little by little produce electronics and hole, and it makes current flowing and produces.

Thermoelectric flow Ileak represents Vd (=anode potential-cathode potential) correlativity, and can be in the zone of-5.0≤Vd≤-1.5 be that the straight line of KA (KA＞0) is similar to as slope.At this, KA is the function with respect to temperature, if the temperature rising is then risen in the mode of exponential function.In this Vd zone (Vd=-5.0≤Vd≤-1.5), circulate in the photoelectricity flow Iphoto that is subjected to optical sensor 350P-1～350P-6 and have substantially certain value, and be proportional to outer illuminance LX (below, be made as Iphoto=LX * k).So circulate in the electric current (curve (A)) that is subjected to optical sensor 350P-1～350P-6, the electric current (curve (B)) that circulates in shading sensor 350D-1～350D-6 all is that slope is the straight line of KA (KA＞0) in the zone of-5.0≤Vd≤-1.5.

At this, if the Vd that is subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6 is become in the same manner bias potential set, be about to the to connect up current potential VSENSE of SENSE is set as the current potential VVSH of wiring VSH and (VVSH+VVSL) ÷ 2 of the lucky intermediate value of the current potential VVSL of wiring VSL, then circulates in and be subjected to optical sensor 350P-1～350P-6 fully consistent with the thermoelectric flow Ileak of shading sensor 350D-1～350D-6.At this moment, be Iphoto+Ileak because circulate in the magnitude of current (=circulate in the magnitude of current that is subjected to optical sensor 350P-1～350P-6) of wiring VSH, the magnitude of current (=circulate in the magnitude of current of shading sensor 350D-1～350D-6) that circulates in wiring VSL is Ileak, so according to kirchhoff the 1st law, the magnitude of current that circulates in wiring SENSE becomes Iphoto=LX * k, is proportional to outer illuminance LX.Although will be subjected in an embodiment optical sensor to be connected in hot side in addition, the shading sensor is connected in low potential side, even much less otherwise connection is also harmless, conclusion is identical.

Figure 14 is the circuit diagram of testing circuit 360.Wiring VCHG, wiring RST, wiring VSL, wiring VSH, wiring OUT are connected with signal input terminal 320, and wiring VSL, wiring VSH, wiring SENSE, wiring PBT, the DBT that connects up are connected in and are subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6.Be connected in the DC power supply of being supplied with by external power source circuit 784 at this wiring VCHG, wiring VSL, wiring VSH, VCHG wiring be supplied to current potential VVCHG (=2.0V), VSL wiring be supplied to current potential VVSL (=0.0V), the VSH wiring be supplied to current potential VVSH (=5.0V).Also having, is the GND of liquid crystal indicator 910 at the current potential VVSL of this VSL wiring.

Wiring SENSE is connected in each end of the 1st capacitor C1 and the 3rd capacitor C3.And, be connected in the drain electrode of initial charge transistor NC.The other end of the 3rd capacitor C3 is connected in wiring VSL.The other end of the 1st capacitor C1 is connected in node A.The source electrode of initial charge transistor NC is connected in wiring VCHG, is supplied to current potential VVCHG (=2.0V) power supply.The gate electrode of initial charge transistor NC is connected in wiring RST.Node A also is connected in gate electrode and the gate electrode of 1P transistor npn npn P1 and the drain electrode of reset transistor NR of 1N transistor npn npn N1, also is connected in the end of the 2nd capacitor C2.The other end of the 2nd capacitor C2 is connected in wiring RST.

The drain electrode of 1N transistor npn npn N1 and the drain electrode of 1P transistor npn npn P1 and the source electrode of reset transistor NR are connected in Node B.Node B also is connected in the gate electrode of 2N transistor npn npn N2 and the gate electrode of 2P transistor npn npn P2.The drain electrode of 2N transistor npn npn N2 and the drain electrode of 2P transistor npn npn P2 are connected in node C, and node C also is connected in the gate electrode of 3N transistor npn npn N3 and the gate electrode of 3P transistor npn npn P3.The drain electrode of 3N transistor npn npn N3 and the drain electrode of 3P transistor npn npn P3 are connected in node D, and node D also is connected in the gate electrode of 4N transistor npn npn N4 and the gate electrode of 4P transistor npn npn P4.The drain electrode of 4N transistor npn npn N4 and the drain electrode of 4P transistor npn npn P4 are connected in wiring OUT, and wiring OUT also is connected in the drain electrode of 5N transistor npn npn N5.The gate electrode of 5N transistor npn npn N5 and the gate electrode of 5P transistor npn npn P5 are connected in wiring RST, and the drain electrode of 5P transistor npn npn P5 is connected in the source electrode of 4P transistor npn npn P4.The source electrode of the 1st～the 5N transistor npn npn N1～N5 be connected in the wiring VSL, be supplied to current potential VVSL (=0V).And the source electrode of the 1st～the 3P transistor npn npn P1～P3 and 5P transistor npn npn P5 be connected in the wiring VSH, be supplied to current potential VVSH (=+ 5V).

And, also possess the self-correcting potential circuit 361 that the current potential that puts on wiring PBT and wiring DBT is automatically proofreaied and correct according to transistorized threshold voltage (Vth) at testing circuit 360.Self-correcting potential circuit 361 constitutes: the drain electrode of 6N transistor npn npn N11 and 6P transistor npn npn P11 and gate electrode are connected to wiring PBT, the drain electrode of 7N transistor npn npn N21 and 7P transistor npn npn P21 and gate electrode are connected to wiring DBT, the source electrode of 6N transistor npn npn N11 and 7N transistor npn npn N21 be connected in the wiring VSL and be supplied to current potential VVSL (=0V), the source electrode of 6P transistor npn npn P11 and 7P transistor npn npn P21 be connected in the wiring VSH, be supplied to current potential VVSH (=+ 5V).

And, testing circuit 360 by take with the indium tin oxide films (ITO) that consists of pixel electrode 402-n-m for whole of formed guarded electrode 369 coverings of the film of same film.Guarded electrode 369 is connected in the GND current potential of liquid crystal indicator 910 by wiring VSL, as working for the shielding device of electromagnetic noise.

At this in the present embodiment, the channel width of 1N transistor npn npn N1 is 10 μ m, the channel width of 2N transistor npn npn N2 is 35 μ m, the channel width of 3N transistor npn npn N3 is 100 μ m, the channel width of 4N transistor npn npn N4 is 150 μ m, the channel width of 5N transistor npn npn N5 is 150 μ m, the channel width of 6N transistor npn npn N11 is 4 μ m, the channel width of 7N transistor npn npn N21 is 200 μ m, the channel width of 1P transistor npn npn P1 is 10 μ m, the channel width of 2P transistor npn npn P2 is 35 μ m, the channel width of 3P transistor npn npn P3 is 100 μ m, the channel width of 4P transistor npn npn P4 is 300 μ m, the channel width of 5P transistor npn npn P5 is 300 μ m, the channel width of 6P transistor npn npn P11 is 200 μ m, the channel width of 7P transistor npn npn P21 is 4 μ m, the channel width of reset transistor NR is 2 μ m, the channel width of initial charge transistor NC is 50 μ m, the transistorized channel length of whole N-types all is 8 μ m, the channel length of whole P transistor npn npns all is 6 μ m, and the transistorized mobility of whole N-types all is 80cm ²/ Vsec, the mobility of whole P transistor npn npns all is 60cm ²/ Vsec, the transistorized threshold voltage of whole N-types (Vth) all is+1.0V that the threshold voltage (Vth) of whole P transistor npn npns all is-1.0V that the capacitance of the 1st capacitor C1 is 1pF, the capacitance of the 2nd capacitor C2 is 100fF, and the capacitance of the 3rd capacitor C3 is 100pF.

Wiring RST is that potential amplitude is the pulsating wave of 0-5V, in each cycle 510m second, during pulse length was 100 μ seconds, remains noble potential (5V), remains electronegative potential (0V) during remaining 509.9m second.Every 510m becomes height (5V) second if RST connects up, and then initial charge transistor NC and reset transistor NR conducting is to the current potential (2.0V) of wiring SENSE charging VCHG wiring, node A and Node B short circuit.Because 1N transistor npn npn N1 and 1P transistor npn npn P1 consist of negative circuit, so the IN/OUT of negative circuit is by short circuit.At this moment, the current potential of node A and Node B finally reaches by the represented current potential VS of following numerical expression (detailed calculated example such as reference Kang Leblebici work " CMOS Digital Integrated Circuits " ThirdEdition P206 etc.).

Formula 1

VS＝[Vthn+SQRT(WpLnμ _p/WnLpμ _n)×(VVSH-VVSL+Vthp)]/[1+SQRT(WpLnμ _p/WnLpμ _n)]

At this, because Wn: be the channel width of 1N transistor npn npn N1, Ln: be the channel length of 1N transistor npn npn N1, μ _n: be the mobility of 1N transistor npn npn N1, Vthn: be the threshold voltage of 1N transistor npn npn N1, Wp: be the channel width of 1P transistor npn npn P1, Lp: be the channel length of 1P transistor npn npn P1, μ _p: be the mobility of 1P transistor npn npn P1, Vthp: be the threshold voltage of 1P transistor npn npn P1, so be calculated as in the present embodiment VS=2.5V.Also have, wiring RST be during high (5V) because the N5 conducting of 5N transistor npn npn and the 5th P transistor npn npn P5 cut-off, so the OUT wiring is 0V.

Become low (0V) after second if RST is routed in 100 μ, then reset transistor NR cut-off, node A and Node B electricity disconnect.At this moment, the negative circuit that is consisted of with 1N transistor npn npn N1 and 1P transistor npn npn P1, if the current potential of node A is lower then to the Node B output current potential higher than VS than VS, if the current potential of node A than VS height then to the Node B output current potential lower than VS.2N transistor npn npn N2 and 2P transistor npn npn P2 and 3N transistor npn npn N3 and 3P transistor npn npn P3 also consist of respectively negative circuit, if similarly the current potential of input stage is then exported the current potential higher than VS than VS is low, if the current potential of input stage is then exported the current potential lower than VS than VS height.At this moment, it is larger than the difference of the current potential of input stage and VS that the current potential of output stage and the difference of VS become, to the current potential VVSH of wiring VSH (=+ 5V) or the current potential VVSL of wiring VSL (=0V) close.As a result, if the current potential of node A than the low then node of VS D substantially become VSH wiring current potential VVSH (=+ 5V), if the current potential of node A is higher than VS, then node D substantially become the VSL wiring current potential VVSL (=0V).Because 4N transistor npn npn N4 and 5N transistor npn npn N5,4P transistor npn npn P4 and 5P transistor npn npn P5 consist of NOR circuit, so during the current potential of RST wiring is low (0V), if node D for high (+5V) then with low (0V) if node D be low (0V) then with height (+5V), export to the OUT that connects up respectively.That is, during the current potential of RST wiring is low (0V), if the current potential of node A then is output as low (0V) to wiring OUT than VS is low, if the current potential of node A than VS height then to the OUT that connects up be output as height (+5V).

Node A such as aforementioned, although wiring RST becomes low (0V), reset transistor NR cut-off, node A and Node B electricity disconnect, meanwhile its current potential descends simultaneously with wiring RST owing to the coupling of the 2nd capacitor C2.At this, if the capacitance CC1 of the 1st capacitor C1 (=1pF) than the capacitance CC2 of the 2nd capacitor C2 (=100fF) and 1N transistor npn npn N1,1P transistor npn npn P1, capacitance between the grid leak of reset transistor NR (all being that 10fF is following in the present embodiment) is enough large, if and (in the present embodiment for 100n second) enough greatly between the decrement phase of the capacitance that writes impedance and the 1st capacitor C1 of reset transistor NR long-pending (be about in this enforcements 1 μ second) than the current potential of wiring RST, then when wiring RST when becoming low (0V) (below, if this time is t=0) the current potential (below, be made as VA (t)) of node A can be represented by following formula.

Formula 2

VA(t＝0)＝VS-(CC2/CC1)×(VVSH-VVSL)

Become in the present embodiment VA (t=0)=2.0V.At this moment, being added in the bias potential that is subjected to optical sensor 350P-1 is Vd=-3.0V, and the bias potential that is added in shading sensor 350D-1 is Vd=-2.0V.As according to the explanation of Figure 13 and clearly, at this moment, the difference of thermoelectric flow Ileak that consists of the PIN diode that is subjected to optical sensor 350P-1 and shading sensor 350D-1 is represented with KA * 1.0.Thereby, in wiring SENSE, circulating to increased the electric current of magnitude of current KA * 1.0 corresponding to the photoelectricity flow Iphoto that shines the outer light that is subjected to optical sensor 350P-1.At this, if KA＜＜Iphoto then circulate in the wiring SENSE the magnitude of current can be approximately only Iphoto, can remove the contribution of thermocurrent.KA 70 of guarantee of work upper temperature limit ℃ the time becomes with Iphoto under illumination 10 luxs and equates in the present embodiment.Thus, if outer illuminance is more than 100 luxs, then in guarantee of work temperature range, can effectively remove the heat leak electric current.

In the relation of in addition light and Iphoto such as aforementioned, be proportional to irradiation at the lower outside light of this bias condition and be subjected to the outer illuminance LX of optical sensor 350P-1 and irrespectively become Iphoto=LXk (k be certain coefficient) with Vd.If the RST wiring becomes low (0V), then because node A is floating state, if so ignore capacitance between grid-source of the capacitance CC2 of the 2nd capacitor C2 and 1N transistor npn npn N1,1P transistor npn npn P1, then effectively capacitance becomes the only capacitance CC3 of the 3rd capacitor C3 basically, and the current potential VSENSE of wiring SENSE such as following formula change with representing.

Formula 3

VSENSE(t)＝VVCHG+(LX×k/CC3)×t

Also have, be used herein to explanation and ignore in the additional capacitor value that is subjected to optical sensor 350P-1 and shading sensor 350D-1 and draw around wiring and describe.The amount of these additional capacitor values is added in above-mentioned CC3 and gets final product.And, be subjected to optical sensor 350P-1 and shading sensor 350D-1 and drawing around the additional capacitor value of wiring enough in the large situation, also the 3rd capacitor C3 can not to be set.Thereby the value of CC3 is according to being subjected to optical sensor 350P-1 and shading sensor 350D-1 and drawing around the additional capacitor value of wiring and determine lower limit.

The then amount of VA (t) identical current potential because capacitive coupling changes if VSENSE (t) changes.Thereby the current potential VA of node A can be represented by following formula.

Formula 4

VA(t)＝VS-(CC2/CC1)×(VVSH-VVSL)+(LX×k/CC3)×t

Become the time t0 of VA (t)=VS at this, can be represented by following formula.

t0＝(CC2×CC3/CC1×LX×k)×(VVSH-VVSL)

That is, OUT output is carried out anti-phasely from low (0V) to high (5V) when time t0, and according to this time t0, outer illuminance LX easily obtains.

Testing circuit 360 is during the RST wiring is for low (0V), and node A becomes floating state, and the current potential of node A changes and delays work if enter then in this electromagnetic noise.Thereby preventing of electromagnetic noise is of crucial importance, configures guarded electrode 369 for this reason.

The problem that exists photoelectricity flow Iphoto to change with respect to the electric field of vertical direction such as PIN type diode, the PN type diode of the transversary of this formation.If be directed to the present embodiment particularly, then be connected in the transparency electrode 612P-1～612P-6 of wiring PBT and the current potential of backlight shading electrode 611P-1～611P-6 (below, be VPBT), be connected in the transparency electrode 612D-1～612D-6 of wiring DBT and the current potential of backlight shading electrode 611P-1～611P-6 (below, be VDBT) and affect respectively and be subjected to the characteristic of optical sensor 350P-1～350P-6, the characteristic of shading sensor 350D-1～350D-6.

Figure 15 is the characteristic that is subjected to the diode of optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6 about formation, potential difference (PD) between shading electrode (and transparency electrode)-cathode electrode is taken as transverse axis, is that Vd=-2.5V, outer light are the curve when electric current is taken as the longitudinal axis between anode-cathode under the condition of 1000 luxs with PIN diode at 23 ℃, bias potential.Transverse axis is equivalent to VPBT-VVSH in being subjected to optical sensor 350P-1～350P-6 in the present embodiment, is equivalent to VDBT-VSENSE in shading sensor 350D-1～350D-6.

Solid line (A) has been measured among a plurality of hits for the magnitude of voltage of transverse axis of expression peak point current, has represented the result of the sampling of median; Dotted line (B) has carried out repeatedly having represented the result of peaked sampling among the sampling determination for the magnitude of voltage of transverse axis of expression peak point current in the same manner; Dotted line (C) has carried out repeatedly having represented the result of the sampling of minimum value among the sampling determination for the magnitude of voltage of transverse axis of expression peak point current in the same manner.All has certain proper voltage (this photocurrent is become between the shading electrode (and transparency electrode) of peak value-cathode electrode potential difference (PD) hereinafter referred to as VMAX) at peak value as can be known.This is because following reason: if the potential difference (PD) between shading electrode (and transparency electrode)-cathode electrode is proper voltage, and the light accepting part of PIN junction diode (light accepting part 350P-1I, light accepting part 350D-1I among Fig. 8 are suitable) exhausting and pass through photoexcitation carrier in whole zone then; With respect to this, if potential difference (PD) and proper voltage between shading electrode (and transparency electrode)-cathode electrode just are in a ratio of, light accepting part N-type then, if similarly be in a ratio of negative with proper voltage, light accepting part P type then, the narrowed width of depletion layer, the area by photoexcitation carrier is limited.Thereby, must VPBT, VDBT suitably be controlled for fully obtaining photocurrent, and so that become the VMAX point.As according to the curve (A) of Figure 15 as can be known, preferred: making inconsistent median place, the current potential of light shield layer and transparency electrode is the current potential from the low 1.4V degree of current potential that puts on cathode electrode.But as curve (A) and curve (B) and curve (C) being compared and knowing ground, in fact appropriate current potential VMAX departs from a little owing to manufacturing is inconsistent.This is because the inconsistent and phenomenon that occurs in manufacturing process such as the defect level, the fixed charge at underlying insulation film/gate insulating film interface in the polysilicon membrane.

Figure 16 is the distribution plan that is illustrated in the correlativity of the thin film transistor (TFT) made on the same substrate and PIN diode.With the mean value of the threshold voltage (VthN) of N-type thin film transistor (TFT) and the threshold voltage (VthP) of P type thin film transistor (TFT) as transverse axis, so that the photocurrent of PIN diode becomes maximum appropriate current potential VMAX as the longitudinal axis.As known to from Figure 16, the threshold value of thin film transistor (TFT) becomes maximum appropriate current potential VMAX with the photocurrent that makes PIN diode and has strong positive correlation.In the present embodiment such as the curve of Figure 16 (A), photocurrent presents maximal value (VMAX) when shading electrode (and transparency electrode) is compared to the low 1.4V degree of cathode electrode current potential, the threshold voltage (VthN) of N-type thin film transistor (TFT) of this moment be+1.0V, be the average state of manufacturing in inconsistent with the threshold voltage (VthP) of P type thin film transistor (TFT) for-1.0V, if be presented on make inconsistent in the mean value of VthN and Vth P depart from 1V then VMAX also depart from 1V, the substantially positive correlation of y=x (dotted line).

According to more than, adopt in the present embodiment the transistorized threshold value of based thin film (Vth) that voltage is carried out self-correcting, the wiring PBT with the wiring DBT execute alive self-correcting potential circuit 361.In the average value in the manufacturing of the present embodiment is inconsistent, VthN=+1.0, VthP=-1.0,361 pairs of wirings of self-correcting this moment potential circuit PBT applies 3.6V, and DBT applies 1.4V to wiring.Because negative electrode is connected with wiring VSH and is 5.0V in being subjected to optical sensor 350P-1～350P-6, so the potential difference (PD) of backlight shading electrode 611P-1～611P-6 and transparency electrode 612P-1 and negative electrode becomes-1.4V, it becomes the best current potential (VMAX) that obtains photocurrent.Because making the inconsistent transistorized characteristic change that makes, and if for example VthN=+1.5, VthP=-0.5 then apply 4.1V, apply 1.9V at wiring DBT at wiring PBT.If similarly for example VthN=+0.5, VthP=-1.5 then apply 3.1V, 0.9V at wiring PBT, wiring DBT respectively.Because no matter if transistorized threshold value change then correspondingly puts on wiring PBT and also all changes of current potential of the DBT that connects up with it in which kind of situation, so always substantially obtain photocurrent the largelyst.

Figure 17 is that expression is as the circuit diagram of the 2nd self-correcting potential circuit 361 ' of the other formation of the self-correcting potential circuit 361 of Figure 16.Gate electrode and the drain electrode of the gate electrode of 8N transistor npn npn N31 and drain electrode and 8P transistor npn npn P31 all are connected in node E.And, node E also be connected in 9P transistor npn npn P41 gate electrode, with the gate electrode of 9N transistor npn npn N41.The source electrode of 9P transistor npn npn P41 is connected in wiring PBT, and drain electrode is connected in wiring VSL.And the drain electrode of 10P transistor npn npn P42 is connected in wiring PBT, and the source electrode is connected in wiring VSH, and gate electrode is connected in adjusts power-supply wiring Voff1.The source electrode of 9N transistor npn npn N41 is connected in wiring DBT, and drain electrode is connected in wiring VSH.The drain electrode of 10N transistor npn npn N42 is connected in wiring DBT, and the source electrode is connected in wiring VSL, and gate electrode is connected in adjusts power-supply wiring Voff2.Adjust power-supply wiring Voff1 and adjust the power supply of power-supply wiring Voff2 for being supplied with by external power source circuit 784 by signal input terminal 320, adjust power-supply wiring Voff1 and be set as 3.9V, adjust power-supply wiring Voff2 and be set as 1.1V.At this, the channel width of 8N transistor npn npn N31 is 10 μ m, the channel width of 8P transistor npn npn P31 is 10 μ m, the channel width of 9N transistor npn npn N41 is 100 μ m, the channel width of 10N transistor npn npn N42 is 100 μ m, the channel width of 9P transistor npn npn P41 is 100 μ m, the channel width of 10P transistor npn npn P42 is 100 μ m, the transistorized channel length of whole N-types all is 8 μ m, the channel length of whole P transistor npn npns all is 6 μ m, and the transistorized mobility of whole N-types all is 80cm ²/ Vsec, the mobility of whole P transistor npn npns all is 60cm ²/ Vsec.If as consist of abovely, it is identical in the self-correcting potential circuit 361 with Figure 14 that the relation that then is output in the voltage of wiring DBT and is output in the wiring voltage of PBT and the transistorized threshold voltage of film-type (Vth) from the 2nd self-correcting potential circuit 361 ' becomes.

Compare with the formation of the self-correcting potential circuit 361 of Figure 14, the formation of the 2nd self-correcting potential circuit 361 ' of Figure 17 has following advantage: in the situation that do not change active-matrix substrate 101, can adjust the voltage that is output in wiring DBT and the voltage that is output in wiring PBT by the current potential of adjusting power-supply wiring Voff1 and adjusting power-supply wiring Voff2 is adjusted.On the other hand, because parts number, wiring number, number of terminals increase, regard as from the viewpoint of circuit area and be disadvantageous formation, thus which kind of adopts on earth consist of, can be according to relative merits arbitrary decision separately.And the present invention is not limited to these circuit and consists of, and in addition, also can use known all potential circuits to replace self-correcting potential circuit 361.And, also wiring DBT and wiring PBT can be connected in external power source circuit 784 by signal input terminal 320, supply with suitable current potential from external power source circuit 784.In this case, by will from the setting value of the current potential of external power source circuit 784 output by each product be written into EEPROM etc. and can also carry out for the inconsistent control of product.

Also have, although the wiring VSL that will be connected in the wiring VSH of the power supply that is subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6 and power supply in this embodiment has been used as the driving power of testing circuit 360, they also can be used as other power-supply wiring.Consist of if so, then wiring, number of terminals increase on the one hand, but have on the other hand the work noise of testing circuit 360 to be difficult to have influence on the advantage that is subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6.

In the present embodiment, the signal of 781 couples of terminal OUT of central operation circuit monitors, and at first obtains discrete value V10 according to the anti-time t0 of staring at has occured.Discrete value V10 is sampled arbitrary number of times, obtains its mean value V10.According to V10 reference table 785 is carried out reference, obtain the voltage setting value V20 corresponding to the suitable backlight unit 926 of V10.Central operation circuit 781 sends the briliancy that external power source circuit 784 changes backlight unit 926 to by the value with this V20.Briliancy changes during complete white demonstration of liquid crystal indicator 910 thus, and excessive briliancy makes identification improve and can suppress the increase of power consumption for the user by suppressing.

The relation of the detection illumination of exterior light and backlight briliancy such as Figure 18 ground are set in the present embodiment.Until detect the illumination rising that makes backlight till the illumination 300 (lux), more than 300 luxs, make slope ratio greatly and rising illumination.When detecting illumination 2000 lux, briliancy becomes MAX and becomes later on identical state.Set if so, then light suppresses to be not dazzling degree with backlight when below 300 luxs and on every side pupil extremely dark, the user opens outside, in 300 luxs～the outer light of 2000 luxs mirrors in the zone of liquid crystal panel, unanimously in around lightness briliancy is risen rapidly and identification is reduced.

On the other hand, in the situation that be not to use the Semitransmissive liquid crystal such as the present embodiment ground for transmission-type, as long as such as Figure 19 ground.Although until outer illuminance is for same till 5000 luxs, but because more than it, only just reach enough identifications with the reflecting part, therefore backlight is closed fully, make it possible to save power consumption, so especially when outdoor the use, the battery-operated time of the electronic equipment that it is carrying prolongs by leaps and bounds.

Much less, this control curve is an example, corresponding to purposes, both can carry out the setting of various curves, also can make curve have hysteresis etc. in order to suppress flicker.And, can not be that each mensuration is all carried out the briliancy adjustment yet, and repeatedly measure, and average, median and briliancy is adjusted etc.

Consist of the situation that is subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6 with photistor and also basically as with the present embodiment describe ground, preferred: as to carry out respectively optimization to putting on the voltage that is subjected to optical sensor 350P-1～350P-6 and shading sensor 350D-1～350D-6 to overlook overlapping electrode.This is because the impact of overlapping electrode is also overlooked in the expansion of the depletion layer in the photistor.

The 2nd embodiment

Figure 20 is the three-dimensional composition figure (fragmentary cross-sectional view) of the liquid crystal indicator 910B among the 2nd embodiment, replace among the 1st embodiment with the illustrated liquid crystal indicator 910 of Fig. 1.Below, to describing with difference at the liquid crystal indicator 910 of Fig. 1 of the 1st embodiment.

In the present embodiment, replace being subjected to light peristome 990-1～990-6, configure 10 and be subjected to light peristome 991-1～991-10.This be disposed at away from extension 102 by light peristome 991-1～991-6 and relatively to circumference, be subjected to light peristome 991-7～991-10 to be disposed at the limit of the circumference that is orthogonal to extension 102.And, replace active-matrix substrate 101, use active-matrix substrate 101B, subtend substrate 912 replaces with subtend substrate 912B.Be 0.25mm at this subtend substrate 912B except its thickness, be the formation same with subtend substrate 912.Because it is different that other point and Fig. 1 at the 1st embodiment there is no, so additional identical symbol and explanation is omitted.

Figure 21 is the block diagram of the active-matrix substrate 101B among the 2nd embodiment, replace among the 1st embodiment with the illustrated active-matrix substrate 101 of Fig. 2, below, by with difference at the active-matrix substrate 101 of Fig. 2 of the 1st embodiment centered by describe.Connect up in the present embodiment DBT, the wiring PBT do not exist, be replaced by respectively by optical sensor 350P-1～350P-6, shading sensor 350D-1～350D-6 and be subjected to optical sensor 351P-1～351P-10, shading sensor 351D-1～351D-10.At this, be subjected to optical sensor 351P-1～351P-6 and shading sensor 351D-1～351D-10 to be disposed at the limit identical with being provided with the circumference that is subjected to light peristome 991-1～991-6, configuration consists of with being subjected to light peristome 991-1～991-6 to overlook overlappingly to be subjected to optical sensor 351P-1～351P-6.And be subjected to optical sensor 351P-7～351P-10 and shading sensor 351D-7～351D-10 to be disposed at the limit identical with being provided with the circumference that is subjected to light peristome 991-1～991-6, configuration consists of with being subjected to light peristome 991-1～991-6 to overlook overlappingly to be subjected to optical sensor 351P-1～351P-6.Be subjected to optical sensor 351P-1～351P-10 to be connected in wiring SENSE and wiring VSH, shading sensor 351D-1～351D-10 is connected in wiring VSL and wiring SENSE and wiring VCHG.Testing circuit 360 is replaced by testing circuit 362.Because on other point from the 1st embodiment there is no any different, so by additional identical symbol explanation is omitted.And, the current potential that wiring VSH in the present embodiment provides is 5.0V, the current potential that provides to wiring VSL is 0.0V, the current potential that provides to wiring VCHG is 2.0V, be that potential amplitude is the pulsating wave of 0-5V to the signal that provides of wiring RST, in each cycle 510m second, during pulse length was 100 μ seconds, remain noble potential (5V), remain electronegative potential (0V) during remaining 509.9m second, this also there is no different from the 1st embodiment.

Figure 22 is the circuit diagram of testing circuit 362, and the difference with the testing circuit that is shown in Figure 14 360 of the 1st embodiment is described.Connect up in the present embodiment DBT, wiring PBT do not exist, and self-correcting potential circuit 361 does not exist yet.Generation and make the wiring VCHG directly export to shading sensor 351D-1～351D-10.And guarded electrode 369 does not exist.Thus, be compared to the 1st embodiment, although the additional capacitor of circuit diminishes, more high speed and high precision are carried out work, but anti-electromagnetic noise dies down on the other hand, and the size that the electromagnetic noise that groundless allocation position by testing circuit etc. causes is arranged of guarded electrode 369 is determined to get final product.Because connection and the capacitance of the 1st capacitor C1, the 2nd capacitor C2, the 3rd capacitor C3, the setting of the formation of initial charge transistor NC, initial charge transistor NC, the 1st～the 5N transistor npn npn N1～N5, the 1st～the 5P transistor npn npn P1～P5, size, mobility, threshold voltage (Vth) is all same with the 1st embodiment, so explanation is omitted.

Figure 23 is near the amplification plan view that is subjected to optical sensor 351P-1 (the 1st optical sensor) with shading sensor 351D-1 (the 1st optical sensor).Compare and describe with Fig. 8 of the 1st embodiment.Be subjected to optical sensor 351P-1 and be subjected to light peristome 990-1 to overlook overlapping and illuminated outer light, consist of by light accepting part 351P-1I, anode region 351P-1P, cathode zone 351P-1N; Shading sensor 351D-1 with overlooked by light peristome 990-1 overlapping, does not consist of by light accepting part 351D-1I, anode region 351D-1P, cathode zone 351D-1N.Because light accepting part 350P-1I, anode region 350P-1P among light accepting part 351P-1I, anode region 351P-1P, cathode zone 351P-1N, light accepting part 351D-1I, anode region 351D-1P, cathode zone 351D-1N and the 1st embodiment, cathode zone 350P-1N, light accepting part 350D-1I, anode region 350D-1P, cathode zone 350D-1N respectively in formation, size, be connected destination etc. and there is no any change, so explanation is omitted.In the present embodiment, the backlight shading electrode 614P-1 overlapping with being subjected to optical sensor 351P-1 is connected in wiring VSH by target 616P-1, and the backlight shading electrode 614D-1 overlapping with shading sensor 351D-1 is connected in wiring VCHG by target 616D-1.And, be overlapped in the transparency electrode 615 that is subjected to optical sensor 351P-1 and also be overlapped in shading sensor 351D-1, not disconnected from each other, thus the transparency electrode gap 612G among the 1st embodiment does not exist.Transparency electrode 614 disposes and is disposed at the common potential wiring 335 close to the side of viewing area 310 that is subjected to optical sensor 351P-1 and shading sensor 351D-1, is provided common potential.Apply the DC current potential in common potential wiring 335 in the present embodiment, its current potential is 4.0V.Be subjected to optical sensor 351P-2～351P-10 and be subjected to optical sensor 351P-1, shading sensor 351D-2～351D-10 and shading sensor 351D-1, identical because except the position that configures, spacing, direction, so explanation is omitted.

In the present embodiment to the backlight shading electrode 614P-1 that is subjected to optical sensor 351P-1～351P-6～614P-6 connect the current potential VVSH identical with negative electrode (=5V).On the other hand, to the backlight shading electrode 614D-1 of shading sensor 350D-1～350D-6～614D-6 connect current potential VVCHG (=2.0V), just become low (0V) from high (5V) at the RST signal and be afterwards the current potential identical with negative electrode, because become the moment of height (5V) from low (0V) at the current potential that is output in wiring OUT, the potential rise of negative electrode is 2.5V, so become the current potential than its low 0.5V.

Figure 24 is the characteristic that is subjected to the diode of optical sensor 351P-1～351P-6 and shading sensor 351D-1～351D-6 about formation, potential difference (PD) between shading electrode-cathode electrode is taken as transverse axis, being curve when electric current is taken as the longitudinal axis between anode-cathode under the 1000 lux conditions with PIN diode at 23 ℃, bias potential Vd=-2.5V, outer light, is the curve that replaces Figure 15 of the 1st embodiment.Solid line (A) has been measured among the repeatedly sampling for the magnitude of voltage of transverse axis of expression peak point current, has represented the result of the sampling of median; Dotted line (B) is among the magnitude of voltage of the transverse axis of expression peak point current has carried out repeatedly sampling in the same manner, has represented the result of peaked sampling; Dotted line (C) is among the magnitude of voltage of the transverse axis of expression peak point current has carried out repeatedly sampling in the same manner, has represented the result of the sampling of minimum value.Compare with the 1st embodiment, the difference between solid line (A), dotted line (B), dotted line (C) is less in the present embodiment, the potential difference (PD) between shading electrode-cathode electrode can be fixed as 0～0.5V.By so consisting of, the advantage that can reduce parts number, wiring number is arranged than the 1st embodiment.And, because in the formation of the present embodiment, the current potential of backlight shading electrode 614P-1 and backlight shading electrode 614D-1 is connected with the power supply of external power source circuit, so output impedance is connected in like that self-correcting potential circuit 361 than the 1st embodiment and becomes low, also has the advantage with respect to the shielding properties raising of electromagnetic noise.Be on earth as the 1st embodiment the self-correcting potential circuit is set or the self-correcting potential circuit is not set and set potential is put on light shield layer such as the present embodiment ground, can be to inconsistent mensuration of manufacturing process and judge.

And in the present embodiment, transparency electrode 615 is overlapped in shading sensor 351D-1～351D-6, is subjected to optical sensor 351P-1～351P-6 both sides, is applied in identical current potential (common potential).In the present embodiment, backlight shading electrode 614P-1 and be 222 μ F/ μ m as the capacitance of the per unit area between the light accepting part 351P-1I of sensitive layer and backlight shading electrode 614D-1 and as the capacitance of the per unit area between the light accepting part 351D-1I of sensitive layer ², transparency electrode 615 and be 18 μ F/ μ m as the capacitance of the per unit area between the light accepting part 351P-1I of sensitive layer and transparency electrode 615 and as the capacitance of the per unit area between the light accepting part 351D-1I of sensitive layer ²Thereby about the impact of current potential on sensitive layer, the side of backlight shading electrode 614P-1, backlight shading electrode 614D-1 is larger than transparency electrode 615, is more than 12 times.Impact when the current potential that the impact when for example, the current potential of backlight shading electrode 614P-1, backlight shading electrode 614D-1 departs from 1V equals transparency electrode 615 departs from 12V.

In the present embodiment, the current potential of transparency electrode 615 and be subjected to the potential difference (PD) between the cathode zone 351P-1N of optical sensor 351P-1 to be-1.0V, potential difference (PD) between the cathode zone 351D-1N of the current potential of transparency electrode 615 and shading sensor 351D-1 is+2.0～2.5V, although the maximum difference that 3.5V is arranged, if but this current potential that is converted into backlight shading electrode then only only is the difference of 0.3V degree, can ignore.Exist in a plurality of situations overlooking overlapping electrode with sensitive layer, if make the current potential optimization with the electrode of the large side of the capacitance of the per unit area of sensitive layer, then also can optimization with the current potential of the electrode of the little side of the capacitance of the per unit area of sensitive layer.In the present embodiment by make transparency electrode 614 as a slice large electrode and shading sensor 351D-1～351D-6, be subjected to optical sensor 351P-1～351P-6 overlapping, be connected in the low common potential power supply of output impedance, make with respect to shading sensor 351D-1～351D-6, improved by the shielding properties of the electromagnetic noise of optical sensor 351P-1～351P-6.

Also have, this time disclosed embodiment will be understood that take whole points as illustration unrestricted.Scope of the present invention is not explanation by above-mentioned embodiment but represented by the scope of technical scheme, and comprises the meaning that the scope with technical scheme is equal to and all changes in scope.

For example, although in the present embodiment transparency electrode 614 is connected with common potential wiring 335, but so long as the lower wiring of output impedance also can be other wiring, for example also can be connected with the wiring VSL of the GND that is connected in liquid crystal indicator 910.

About the embodiment of the liquid crystal indicator that adopted active-matrix substrate 101B, replace with active-matrix substrate 101B because only will be shown in the active-matrix substrate 101 of liquid crystal indicator 910 of Fig. 1 of the 1st embodiment, so explanation is omitted.And, about having adopted the electronic equipment of liquid crystal indicator 910, also because identical with the explanation of Fig. 4 of the 1st embodiment, so details are omitted.

About being subjected to the size of light peristome 991-1～991-6, be all mutually 10mm in the direction of the boundary edge that is parallel to the circumference that disposes this viewing area 310 that is subjected to light peristome 990-1～990-6 (below, be called directions X) with the 1st embodiment.On the other hand, considered as the limit thermograde close to backlight unit 926 becomes large by the size of the directions X of light peristome 991-7～991-10, shorten to 7mm.Corresponding to this, being subjected to the disposition interval of light peristome 991-1～991-6 is 20mm, and the disposition interval that is subjected to light peristome 991-7～991-10 is 14mm.

About the direction of the boundary edge that is orthogonal to viewing area 310 (below, be called Y-direction), because the thickness of subtend substrate 912B is 0.25mm, parasitic light is strengthened when coexisting mutually 0.3mm with the 1st embodiment, measure precise decreasing, so be subjected to light peristome 991-1～991-10 all to be set as the size of 0.2mm in Y-direction.

Such as the present embodiment ground, if be subjected to optical sensor many limit configurations, then because more can eliminate the impact of finger, little shade, thus preferred all the more, but must be according to noting thermograde with the position relationship of light source.Although dispose on 2 limits in the present embodiment and be subjected to optical sensor, certainly, also can be on 3 limits or 4 limits be configured.And, although changed in the present embodiment the size of transducer spacing and peristome according to the difference on limit, as long as significantly different with thermograde among on one side, also can be in the size with change transducer spacing on one side and peristome.

Also have, also can be in the present embodiment, target 616D-1～616D-6, target 616P-1～616P-6 are connected to cathode zone 351D-1N～351D-6N as cathode electrode, abrogate wiring VCHG as the cathode zone 351P-1N～351P-6N of cathode electrode.Other vertical view that is subjected to optical sensor 351P-1 and shading sensor 351D-1 when taking so to consist of is Figure 25.So consist of if take, then because the potential difference (PD) between backlight shading electrode 614P-1～614P-6 and cathode zone 351P-1N～351P-6N and the potential difference (PD) between backlight shading electrode 614D-1～614D-6 and cathode zone 351D-1N～351D-6N are always 0V, so have and circulate in the thermoelectric flow Ileak that is subjected to optical sensor 351P-1～351P-6 and shading sensor 351D-1～351D-6 and be always certain advantage, but on the other hand because backlight shading electrode 614D-1 is connected in wiring SENSE, the wiring SENSE the wiring RST current potential be low (0V) during be not connected in current potential, be floating state, so the problem points of the impact that easily is subject to electromagnetic noise is arranged.Select on earth which kind of scheme can assess impact of electromagnetic noise etc. and determine.

The present invention is not limited to the mode of embodiment, also can be not for the TN pattern but vertical alignment mode (VA pattern), utilized transverse electric field the IPS pattern, utilized in the liquid crystal indicator of FFS pattern etc. of fringe field and utilized.And, both can be the total transmissivity type, also can be fully-reflected type, Transflective dual-purpose type.And both can be used for not is liquid crystal indicator but OLED display, field emission display, can be used for the semiconductor devices beyond the liquid crystal indicator yet.

And, not only be used for shown in the present embodiment unanimously in the control of the demonstration briliancy of outer light, also can be used for briliancy, the colourity of display device are measured and be fed back, not have display device inconsistent, long-time variation to this.

Claims

1. electro-optical device, it is characterized in that, possess: the 1st and the mat woven of fine bamboo strips 2 substrates between clamping the panel of electro-optical substance is arranged, lighting device to the face irradiation light of the aforementioned the 1st or the 2nd substrate of aforementioned panel, be positioned at described panel the viewing area peripheral edge portion and to around the optical detection part that detects of the illumination of light, with corresponding to the testing result of aforementioned optical detection part and the lighting control section to controlling as the aforementioned illumination apparatus of backlight;

Aforementioned optical detection part is arranged at the aforementioned the 1st or the 2nd substrate,

Aforementioned optical detection part possesses:

The 1st optical sensor of illuminated outer light,

By the 2nd optical sensor of the irradiation of the outer light of blocking,

Overlook the 1st electrode that consists of overlappingly by insulation course with aforementioned the 1st optical sensor,

Overlook the 2nd electrode that consists of overlappingly by insulation course with aforementioned the 2nd optical sensor, and

The current potential applying unit that the current potential of the current potential of aforementioned the 1st electrode and aforementioned the 2nd electrode is controlled,

Aforementioned current potential applying unit so that the photoelectricity flow of the aforementioned the 1st and/or the 2nd optical sensor becomes maximal value ground substantially, to the aforementioned the 1st and/or the current potential of the mat woven of fine bamboo strips 2 electrodes control.

2. according to electro-optical device claimed in claim 1, it is characterized in that:

The the aforementioned the 1st or the 2nd substrate possesses the transistor that is formed on the aforementioned the 1st or the 2nd substrate;

Aforementioned current potential applying unit, by aforementioned transistorized threshold voltage to put on the aforementioned the 1st and/or the current potential of the 2nd electrode control.

3. semiconductor devices, it is formed on the substrate; It is characterized in that possessing:

The 1st optical sensor of illuminated outer light,

By the 2nd optical sensor of the irradiation of the outer light of blocking,

The 1st and the mat woven of fine bamboo strips 2 substrates between clamping the panel of electro-optical substance is arranged, described the 1st optical sensor and described the 2nd optical sensor are configured in the viewing area peripheral edge portion of described panel,

Overlook the 1st electrode that consists of overlappingly with aforementioned the 1st optical sensor,

Overlook the 2nd electrode that consists of overlappingly with aforementioned the 2nd optical sensor, and

Apply the current potential applying unit that the photoelectricity flow that makes aforementioned the 1st optical sensor and/or the 2nd optical sensor becomes peaked current potential substantially to aforementioned the 1st electrode and aforementioned the 2nd electrode.

4. according to semiconductor devices claimed in claim 3, it is characterized in that:

Aforementioned the 1st optical sensor is photodiode,

Aforementioned the 2nd optical sensor is photodiode;

When the potential difference (PD) of the cathode electrode of establishing aforementioned the 1st optical sensor and the 1st electrode be V1,

If the potential difference (PD) of the anode electrode of the cathode electrode of aforementioned the 1st optical sensor and the 1st optical sensor be VD1,

If the potential difference (PD) of the cathode electrode of aforementioned the 2nd optical sensor and the 2nd electrode be V2,

When if the potential difference (PD) of the cathode electrode of the aforementioned mat woven of fine bamboo strips 2 optical sensors and the anode electrode of the 2nd optical sensor is VD2,

| V1-V2|＜| VD1| and | V1-V2|＜| VD2|, and/or | V1-V2|＜1V.

5. according to semiconductor devices claimed in claim 4, it is characterized in that:

Aforementioned electric potential difference V1 is V1=0V, and/or aforementioned electric potential difference V2 is V2=0V, and/or aforementioned electric potential difference V1 and VD1 be V1=VD1, and/or aforementioned electric potential difference V2 and VD2 are V2=VD2.

6. according to semiconductor devices claimed in claim 3, it is characterized in that:

Aforementioned the 1st electrode and the 2nd electrode, comprise: for the 1st shading electrode and the 2nd shading electrode that light is carried out shading, light is not carried out the 1st transparency electrode and the 2nd transparency electrode of shading, or to light carry out the 1st shading electrode of shading with not to light carry out shading the 1st transparency electrode, and light carried out the 2nd shading electrode of shading and the 2nd transparency electrode arbitrary right that light is not carried out shading.

7. according to semiconductor devices claimed in claim 6, it is characterized in that:

Between aforementioned the 1st shading electrode and the 2nd shading electrode, be formed with the shading electrode gap zone that does not form the shading electrode;

Be formed with the gap occulter of non-transparency in the zone with aforementioned shading electrode gap region overlapping.

8. according to semiconductor devices claimed in claim 6, it is characterized in that:

Between aforementioned the 1st transparency electrode and aforementioned the 2nd transparency electrode, be formed with the transparency electrode gap area that does not form transparency electrode;

Aforementioned shading electrode gap zone and aforementioned transparency electrode gap area form on the vertical of aforesaid base plate without overlapping.

9. according to semiconductor devices claimed in claim 6, it is characterized in that:

Aforementioned the 1st shading electrode and aforementioned the 1st transparency electrode are same current potential,

Aforementioned the 2nd shading electrode and aforementioned the 2nd transparency electrode are same current potential.

10. according to semiconductor devices claimed in claim 3, it is characterized in that:

Aforementioned current potential applying unit possesses the self-correcting potential circuit that consists of by transistor,

Aforementioned self-correcting circuit constitutes, the voltage that output changes corresponding to aforementioned transistorized threshold voltage,

Aforementioned output is connected in aforementioned the 1st electrode and/or aforementioned the 2nd electrode.

11. according to semiconductor devices claimed in claim 3, it is characterized in that:

The aforementioned mat woven of fine bamboo strips 1 optical sensor and aforementioned the 2nd optical sensor are PIN junction diode or the PN junction diode that has adopted membrane polysilicon.

12. a display device is characterized in that:

Possesses semiconductor devices claimed in claim 3.

13. according to electro-optical device claimed in claim 1, it possesses: clamping has the panel that is formed with the viewing area of electro-optical substance between the 1st and the 2nd substrate, it is characterized in that,

Aforementioned optical detection part is arranged at the aforementioned viewing area circumference of the aforementioned the 1st or the 2nd substrate,

Aforementioned the 1st optical sensor and aforementioned the 2nd optical sensor dispose a plurality of at aforementioned viewing area peripheral edge portion.

14. according to the described electro-optical device of claim 13, it is characterized in that:

Possess to the light source of the viewing area irradiation light of aforementioned panel;

Aforementioned light source at the viewing area circumference, is disposed at the limit that does not configure aforementioned the 1st optical sensor and the 2nd optical sensor.

15. according to the described electro-optical device of claim 13, it is characterized in that:

Aforementioned the 1st optical sensor and the configuration alternate with each other of aforementioned the 2nd optical sensor.

16. according to the described electro-optical device of claim 13, it is characterized in that:

Aforementioned the 1st optical sensor and aforementioned the 2nd optical sensor that configures, the distance of boundary edge of leaving aforementioned viewing area is substantially equal mutually with being adjacent.

17. according to the described electro-optical device of claim 14, it is characterized in that,

Be used in to aforementioned the 1st optical sensor and shine the ambient light of aforementioned panel and the size that is arranged at a plurality of peristomes of the 1st or the 2nd substrate forms:

Be scope more than the 0.5mm and below the 20mm in the direction parallel with the boundary edge of the viewing area circumference that disposes aforementioned peristome, and be more than the 0.05mm and for below the thickness of subtend substrate in the direction with the boundary edge phase quadrature of the aforementioned viewing area circumference that disposes aforementioned peristome.

18. according to the described electro-optical device of claim 17, it is characterized in that,

Aforementioned a plurality of peristome at aforementioned viewing area circumference, possesses: be disposed at subtend in the 1st peristome on the limit on the configuration limit that disposes aforementioned light source, and be disposed at the 2nd peristome on the limit that substantially is orthogonal to the configuration limit;

The aperture area of aforementioned the 1st peristome is larger than aforementioned the 2nd peristome area.

19. an electronic equipment is characterized in that:

Possesses the described electro-optical device of claim 13.