CN108492759B - Photosensitive device, optical detection circuit, driving method and display device - Google Patents
Photosensitive device, optical detection circuit, driving method and display device Download PDFInfo
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- CN108492759B CN108492759B CN201810327931.0A CN201810327931A CN108492759B CN 108492759 B CN108492759 B CN 108492759B CN 201810327931 A CN201810327931 A CN 201810327931A CN 108492759 B CN108492759 B CN 108492759B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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Abstract
The embodiment of the invention provides a photosensitive device, an optical detection circuit, a driving method and a display device, relates to the field of optical detection, and can solve the problem that a photocurrent detection result of the photosensitive device caused by a thermal current is inaccurate in the prior art; the photosensitive device comprises a first electrode, a second electrode and a photoelectric semiconductor device which are oppositely arranged; the photoelectric semiconductor device is divided into a light receiving area and a temperature sensing area; two sub-electrodes of at least one of the first electrode and the second electrode are not connected; a photoelectric semiconductor device located in the light receiving region, constituting a light receiving portion with the first sub-electrode and the third sub-electrode; the photoelectric semiconductor device is positioned in the temperature sensing area, and the second sub-electrode and the fourth sub-electrode form a temperature sensing part; wherein, in the first sub-electrode and the third sub-electrode, at least one sub-electrode is a transparent electrode; the second sub-electrode and the fourth sub-electrode are both opaque electrodes.
Description
Technical Field
The invention relates to the field of optical detection, in particular to a photosensitive device, an optical detection circuit, a driving method and a display device.
Background
The uniformity of a display screen of the display device is used as an important parameter index for evaluating the quality of the display device; taking an Organic Light Emitting Diode (OLED) display device as an example, the OLED display device has the advantages of self-luminescence, high Light Emitting efficiency, short response time, high definition, high contrast ratio, and the like, and thus is the most promising display device.
The conventional OLED display devices are mainly classified into AMOLED (active Matrix OLED) and pmoled (passive Matrix OLED), wherein the AMOLED has advantages of low manufacturing cost, wide working temperature range, and can be used for dc driving of portable devices, and can be used as a large-sized display device with high definition.
Currently, most of OLED compensation methods are external electrical compensation methods, which can only compensate for display anomalies caused by TFT (thin film transistor) characteristic changes, but cannot compensate for display anomalies caused by aging of light Emitting Layer (EL) materials; based on this, the prior art is gradually inclined to adopt more direct optical detection to detect the actual brightness of the OLED and compensate according to the detection result.
However, in the prior art, when optical detection is adopted, a PIN photodiode is generally adopted to convert the actual brightness of the OLED into a corresponding electrical signal, and compensation is performed based on a detection result; however, in the actual detection process, the PIN photodiode inevitably generates a thermal current due to heating, so that the actually received electrical signal has a deviation from the electrical signal (photocurrent) converted by the PIN photodiode under the illumination of the OLED, thereby causing a deviation in the subsequent compensation.
Disclosure of Invention
The embodiment of the invention provides a photosensitive device, an optical detection circuit, a driving method and a display device, which can solve the problem that a photocurrent detection result of the photosensitive device caused by a thermal current is inaccurate in the prior art.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
an aspect of an embodiment of the present invention provides a photosensitive device, including a first electrode and a second electrode that are disposed opposite to each other, and a photoelectric semiconductor device that is located between and in contact with the first electrode and the second electrode; wherein the optoelectronic semiconductor device is divided into a light receiving region and a temperature sensing region; the first electrode includes: a first sub-electrode located in the light receiving region, and a second sub-electrode located in the temperature sensing region; the second electrode includes: a third sub-electrode located in the light receiving region, and a fourth sub-electrode located in the temperature sensing region; two sub-electrodes of at least one of the first electrode and the second electrode are not connected; the photoelectric semiconductor device is positioned in the light receiving area, and the photoelectric semiconductor device, the first sub-electrode and the third sub-electrode form a light receiving part; the photoelectric semiconductor device is positioned in the temperature sensing region, and the photoelectric semiconductor device, the second sub-electrode and the fourth sub-electrode form a temperature sensing part; wherein at least one of the first sub-electrode and the third sub-electrode is a transparent electrode; the second sub-electrode and the fourth sub-electrode are both opaque electrodes.
Further, in the case that the first sub-electrode is an opaque electrode, the first sub-electrode and the second sub-electrode are made of the same material in the same layer; and under the condition that the third sub-electrode is an opaque electrode, the third sub-electrode and the fourth sub-electrode are made of the same layer and the same material.
Further, in the case that the first sub-electrode is an opaque electrode, the first sub-electrode and the second sub-electrode are an integral structure; and under the condition that the third sub-electrode is an opaque electrode, the third sub-electrode and the fourth sub-electrode are of an integral structure.
In another aspect, an optical detection circuit is provided in an embodiment of the present invention, which includes the foregoing photosensitive device; the optical detection circuit further comprises a first switch module and a detection module; the detection module is connected with the first switch module, and the first switch module is respectively connected with the light receiving part and the temperature sensing part through a first sub-electrode and a second sub-electrode which are independently arranged in a first electrode of the photosensitive device; the first switch module is used for controlling the on-off between the photosensitive device and the detection module in an on or off state; the detection module is used for controlling the light receiving part and the temperature sensing part to be in a reverse bias state when the first switch module is turned on; the detection module is further configured to store a first potential of the first sub-electrode of the light receiving portion and a second potential of the second sub-electrode of the temperature sensing portion in a state where the first switch module is turned on, and read a first electrical signal parameter representing a difference between the first potential and the second potential through a detection voltage terminal.
Further, the detection module comprises an energy storage module and a second switch module; the second switch module is used for controlling the light receiving part and the temperature sensing part to be in a reverse bias state when the first switch module is in an on state; the energy storage module is used for storing the first potential and the second potential when the first switch module is switched on; the second switch module is further configured to adjust the first potential and the second potential stored in the energy storage module to the first electrical signal parameter in an on state, and read the first electrical signal parameter through the detection voltage terminal.
Further, the first switch module comprises a first transistor and a second transistor; a gate of the first transistor is connected to a first control signal terminal, a first electrode of the first transistor is connected to the first sub-electrode of the light receiving unit, and a second electrode of the first transistor is connected to a first node; a gate of the second transistor is connected to the first control signal terminal, a first pole of the second transistor is connected to the second sub-electrode of the temperature sensing unit, and a second pole of the second transistor is connected to a second node; the third sub-electrode of the light receiving part and the fourth sub-electrode of the temperature sensing part are both connected with the first voltage terminal; and/or the energy storage module comprises a storage capacitor, one pole of the storage capacitor is connected with the first node, and the other pole of the storage capacitor is connected with the second node; and/or the second switch module comprises a third transistor and a fourth transistor; the grid electrode of the third transistor is connected with a second control signal end, the first pole of the third transistor is connected with the first node, and the second pole of the third transistor is connected with the voltage detecting end; the gate of the fourth transistor is connected to the second control signal terminal, the first pole of the fourth transistor is connected to the second node, and the second pole of the fourth transistor is connected to the second voltage terminal.
Further, one photosensitive device and one first switch module connected with the photosensitive device form a photosensitive assembly; one of the detecting modules in the optical detection circuit is connected with a plurality of photosensitive assemblies.
In another aspect, an embodiment of the present invention further provides a control method for the optical detection circuit, where the control method includes: inputting a first control signal to the first switch module, and inputting a second control signal to the detection module, and controlling a light receiving part and a temperature sensing part in the photosensitive device to be in a reverse bias state; and inputting a first control signal to the first switch module, inputting a second control signal to the detection module, and reading a first electric signal parameter.
Further, the inputting a first control signal to the first switch module and a second control signal to the detecting module, and reading a parameter of the first electrical signal includes: inputting a first control signal to the first switch module, and storing a first potential of a first sub-electrode of a light receiving part and a second potential of a second sub-electrode of a temperature sensing part; and inputting a second control signal to the detection module, and reading the parameter of the first electric signal.
In another aspect, the present invention further provides a display device, including the optical detection circuit; the display device comprises a plurality of sub-pixels arranged in a matrix, and a photosensitive device in the optical detection circuit is arranged corresponding to a single sub-pixel and used for sensing the brightness of the sub-pixel.
Furthermore, in the optical detection circuit, the same detection module is connected with a plurality of photosensitive assemblies, and the plurality of photosensitive assemblies are arranged in one-to-one correspondence with the sub-pixels in the same row.
The embodiment of the invention provides a photosensitive device, an optical detection circuit and a driving method, wherein the photosensitive device comprises a first electrode, a second electrode and a photoelectric semiconductor device, wherein the first electrode and the second electrode are oppositely arranged, and the photoelectric semiconductor device is positioned between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; wherein, the photoelectric semiconductor device is divided into a light receiving area and a temperature sensing area; the first electrode includes: the first sub-electrode is positioned in the light receiving area, and the second sub-electrode is positioned in the temperature sensing area; the second electrode includes: a third sub-electrode located in the light receiving region, and a fourth sub-electrode located in the temperature sensing region; two sub-electrodes of at least one of the first electrode and the second electrode are not connected; a photoelectric semiconductor device located in the light receiving region, constituting a light receiving portion with the first sub-electrode and the third sub-electrode; the photoelectric semiconductor device is positioned in the temperature sensing area, and the second sub-electrode and the fourth sub-electrode form a temperature sensing part; wherein, in the first sub-electrode and the third sub-electrode, at least one sub-electrode is a transparent electrode; the second sub-electrode and the fourth sub-electrode are both opaque electrodes.
In summary, in practical applications of the photosensitive device of the present invention, when the photoelectric semiconductor device in the light receiving portion receives incident light through the transparent electrode, the photoelectric conversion is performed and the thermoelectric conversion is also performed; the photoelectric semiconductor device in the temperature sensing part can only carry out thermoelectric conversion because the photoelectric semiconductor device cannot receive incident light (both electrodes are opaque electrodes); and because the photoelectric semiconductor devices in the light receiving part and the temperature sensing part are of an integral structure, the thermoelectric signals generated by the light receiving part and the temperature sensing part are basically the same, and therefore, when the light sensing device is adopted to carry out actual detection, the electric signal parameters (thermoelectric signals) detected by the temperature sensing part can be subtracted from the electric signal parameters (photoelectric signals + thermoelectric signals) detected by the light receiving part, so that the problem that the detection result of the photocurrent caused by the thermoelectric signals is inaccurate in the prior art can be solved or reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a photosensitive device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another photosensitive device provided in an embodiment of the present invention;
FIG. 3 is a schematic diagram of an optical detection circuit including a photosensitive device according to an embodiment of the present invention;
FIG. 4a is a schematic diagram of a specific structure of an optical detection circuit including a photosensitive device according to an embodiment of the present invention;
FIG. 4b is a timing control diagram of an optical detection circuit including a light sensing device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another optical detection circuit including a photosensitive device according to an embodiment of the present invention;
FIG. 6 is a control method of an optical detection circuit according to an embodiment of the present invention;
FIG. 7 illustrates another method for controlling an optical detection circuit according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another display device including a photosensitive device according to an embodiment of the present invention.
Reference numerals:
001-a photosensitive device; 002-a first switch module; 003-detection module; 031-an energy storage module; 032-a second switch module; 01-an optoelectronic semiconductor device; 10-a first electrode; 11-a first sub-electrode; 12-a second sub-electrode; 13-a third sub-electrode; 14-a fourth sub-electrode; 20-a second electrode; 100-a light receiving section; 200-a temperature sensing part; s1 — a light receiving area; s2 — temperature sensing zone.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a photosensitive device, as shown in fig. 1 or fig. 2, the photosensitive device 001 includes a first electrode 10 and a second electrode 20 which are oppositely disposed, and a photo-semiconductor device 01 which is located between the first electrode 10 and the second electrode 20 and is in contact with the first electrode 10 and the second electrode 20.
It should be noted here that, for the optoelectronic semiconductor device 01, it is able to convert optical signals and thermal signals into electrical signals (photocurrent and thermoelectric current) by using its own optoelectronic effect and thermoelectric effect, and in general, the optoelectronic semiconductor device commonly used in the prior art may be a PN junction, that is, it is composed of a P-type semiconductor layer and an N-type semiconductor layer; the PIN junction may be a PIN junction as shown in fig. 1 or fig. 2, that is, a P-type semiconductor layer, an I-type intrinsic semiconductor layer, and an N-type semiconductor layer, which are sequentially stacked, wherein the stacking order is not limited, and may be P-I-N (fig. 1) from top to bottom, or may be N-I-P from top to bottom; of course, other optoelectronic semiconductor devices are also possible, and the present invention is not limited thereto; in the present invention, a preferred optoelectronic semiconductor device using a PIN junction is described in the following examples.
On this basis, for the sake of clarity of explanation of the photosensitive device 001 in the present invention, with reference to fig. 1, 2, the photoelectric semiconductor device 01(PIN) is divided into a light receiving region S1 and a temperature sensing region S2; it should be understood, of course, that the optoelectronic semiconductor device 01 is only artificially partitioned herein, and that the optoelectronic semiconductor device 01(PIN) is a unitary structure and not two separate and independent structures.
Specifically, referring to fig. 1 and 2, the first electrode 10 includes: a first sub-electrode 11 located in the light-receiving region S1, and a second sub-electrode 12 located in the temperature sensing region S2.
The second electrode 20 includes: a third sub-electrode 13 positioned in the light-receiving region S1, and a fourth sub-electrode 14 positioned in the temperature sensing region S2.
Wherein the photo-semiconductor device 01(PIN) located in the light receiving region S1, and the first sub-electrode 11 and the third sub-electrode 13 constitute a light receiving section 100; the photo-semiconductor device 01(PIN) located in the temperature sensing region S2, and the second sub-electrode 12 and the fourth sub-electrode 14 constitute a temperature sensing portion 200.
Specifically, for the light-receiving section 100, in order to ensure that external light can be incident on the optoelectronic semiconductor device 01(PIN) to convert an optical signal into an electrical signal and detect the electrical signal, in practice, at least one of the first sub-electrode 11 and the third sub-electrode 13 in the light-receiving section 100 needs to be provided as a transparent electrode; for example, as shown in fig. 1, the first sub-electrode 11 is a transparent electrode, and the third sub-electrode 13 is an opaque electrode; the first sub-electrode 11 may be an opaque electrode, and the third sub-electrode 13 may be an opaque electrode; the first sub-electrode 11 and the third sub-electrode 13 may be transparent electrodes; in practice, of course, only one transparent electrode is generally provided.
Of course, it should be understood here that when an optical signal is converted into an electrical signal by the light-receiving section 100, it is necessarily accompanied by an electrical signal that converts heat.
In the temperature sensing part 200, in the present invention, in order to ensure that the temperature sensing part 200 does not receive incident light (i.e., cannot perform conversion of optical signals), but only converts heat into electrical signals, in practice, the second sub-electrode 12 and the fourth sub-electrode 14 in the temperature sensing part 200 are both provided as opaque electrodes.
On this basis, it should also be understood that, in order to ensure that the electrical signals generated in the light receiving part 100 and the temperature sensing part 200 can be individually read, in an actual design, referring to fig. 1, 2, it should be ensured that two sub-electrodes in at least one of the first electrode 10 and the second electrode 20 are not connected; for example, as shown in fig. 1, the two sub-electrodes (11,12) in the first electrode 10 and the two sub-electrodes (13,14) in the second electrode 20 are both independently arranged and unconnected electrodes; it is also possible that the two sub-electrodes (11,12) in the first electrode 10 are independently disposed, unconnected electrodes, the second electrode 20 is an integral electrode, and so on, as shown in fig. 2, and the present invention is not particularly limited thereto, as long as it is ensured that one of the first electrode 10 and the second electrode 20 has two independently disposed, unconnected electrodes for reading signals.
In addition, it should be understood that, as for the light receiving unit 100 and the temperature sensing unit 200, since the optoelectronic semiconductor devices 01 (PINs) therein have the same structure, the magnitude of the thermoelectric signals generated by the two devices is substantially the same in the actual detection, and in the actual manufacturing, the areas of the light receiving unit 100 and the temperature sensing unit 200 are ensured to be as close as possible, so as to reduce the error.
In summary, in practical applications of the photosensitive device of the present invention, when the photoelectric semiconductor device in the light receiving portion receives incident light through the transparent electrode, the photoelectric conversion is performed and the thermoelectric conversion is also performed; the photoelectric semiconductor device in the temperature sensing part can only carry out thermoelectric conversion because the photoelectric semiconductor device cannot receive incident light (both electrodes are opaque electrodes); and because the photoelectric semiconductor devices in the light receiving part and the temperature sensing part are of an integral structure, the thermoelectric signals generated by the light receiving part and the temperature sensing part are basically the same, and therefore, when the light sensing device is adopted to carry out actual detection, the electric signal parameters (thermoelectric signals) detected by the temperature sensing part can be subtracted from the electric signal parameters (photoelectric signals + thermoelectric signals) detected by the light receiving part, so that the problem that the detection result of the photocurrent caused by the thermoelectric signals is inaccurate in the prior art can be solved or reduced.
In the present invention, the opaque electrode is usually made of a metal material, the transparent electrode may be made of a transparent semiconductor Oxide such as Indium Tin Oxide (ITO), Indium Gallium Zinc Oxide (IGZO), Indium Zinc Oxide (IZO), or a thin transparent layer or a semitransparent layer made of a metal material.
On this basis, as described above, of the first sub-electrode 11 and the third sub-electrode 13 in the light-receiving section 100, at least one of the sub-electrodes is a transparent electrode; the second sub-electrode 12 and the fourth sub-electrode 14 in the temperature sensing part 200 are both provided as opaque electrodes, and the first sub-electrode 11 and the second sub-electrode 12 constitute the first electrode 10 of the light sensing device 001, and the third sub-electrode 13 and the fourth sub-electrode 14 constitute the second electrode 20 of the light sensing device 001; based on this, in order to simplify the process and reduce the manufacturing cost, the invention is preferably:
in the case where the first sub-electrode 11 in the light receiving part 100 is an opaque electrode, the first sub-electrode 11 is the same material as the second sub-electrode 12 in the temperature sensing part 200; alternatively, in the case where the third sub-electrode 13 in the light receiving part 100 is an opaque electrode, the third sub-electrode 13 is made of the same material as the fourth sub-electrode 14 in the temperature sensing part 200.
Further, on the basis that the first sub-electrode 11 in the light receiving part 100 and the second sub-electrode 12 in the temperature sensing part 200 are the same layer and the same material, it is preferable in the present invention that, as shown in fig. 2, the first sub-electrode 11 and the second sub-electrode 12 are an integral structure; alternatively, the third sub-electrode 13 in the light receiving part 100 and the fourth sub-electrode 14 in the temperature sensing part 200 are made of the same material in the same layer, and it is preferable that the third sub-electrode 13 and the fourth sub-electrode 14 are an integral structure; thus, the two sub-electrodes are integrally formed, so that the resistance of the electrode of the photosensitive device can be reduced, and the attenuation of the applied electric signal due to the resistance can be reduced.
Of course, it should be understood herein that, in the case where the first sub-electrode 11 and the second sub-electrode 12 are integrally configured, in order to ensure normal reading of the detection signals on the light receiving portion 100 and the temperature sensing portion 200, at this time, the third sub-electrode 13 and the fourth sub-electrode 14 are necessarily two sub-electrodes that are independently disposed (no electrical connection occurs); in the case where the third sub-electrode 13 and the fourth sub-electrode 14 are integrally formed, the first sub-electrode 11 and the second sub-electrode 12 are necessarily two sub-electrodes independently provided (not electrically connected) similarly.
As shown in fig. 3, the optical detection circuit includes the aforementioned light sensing device 001, a first switch module 002, and a detection module 003.
Specifically, referring to fig. 3, the detecting module 003 is connected to the first switching module 002, and the first switching module 001 is connected to the light receiving portion 100 and the temperature sensing portion 200 of the light receiving device 001 through the first sub-electrode 11 and the second sub-electrode 12 (see fig. 2) independently disposed in the first electrode 10 of the light receiving device 001.
The first switch module 002 is used for controlling the on/off between the light-receiving portion 100 and the temperature-sensing portion 200 of the light-sensing device 001 and the detection module 003 when the light-receiving portion is turned on or turned off.
The detecting module 003 is used for controlling the light receiving portion 100 and the temperature sensing portion 200 to be in a reverse bias state when the first switch module 002 is turned on.
The detecting module 003 is further configured to store the first potential V1 of the first sub-electrode 11 of the light receiving part 100 and the second potential V2 of the second sub-electrode 12 of the temperature sensing part 200 in a state that the first switching module 002 is turned on, and read the first electrical signal parameter Y representing the difference between the first potential V1 and the second potential V2 through the detecting voltage terminal Sense.
Since the optical detection circuit includes the aforementioned light sensing device, the same structure and advantageous effects as those of the light sensing device provided by the aforementioned embodiment are obtained. Since the foregoing embodiments have described the structure and advantageous effects of the photosensitive device in detail, detailed description is omitted here.
It should be noted here that, for the aforementioned embodiment of the photosensitive device 001, two sub-electrodes of at least one of the first electrode 10 and the second electrode 20 are not connected to ensure that the electric signals generated in the light receiving part 100 and the temperature sensing part 200 are separately read, but for the optical detection circuit in the present invention, it is defined that the first electrode 10 has the first sub-electrode 11 and the second sub-electrode 12 independently arranged therein; it should be understood that, in the present invention, no practical specific limitation is made on the first electrode and the second electrode in the photosensitive device 001, and for the optical detection circuit, an electrode having two sub-electrodes in an electrode (a first electrode or a second electrode) in the photosensitive device 001 may be regarded as a first electrode, and of course, the other electrode is a second electrode.
It should be noted here that, taking the optoelectronic semiconductor device 01 of PIN structure as an example, in practice, one end for separately reading the generated electric signal is preferably set as a cathode end of the PIN structure (refer to fig. 5); that is, the first electrode is used as the cathode of the photosensitive device, and when the photosensitive device is in a reverse bias state through actual control, the voltage of the second electrode (anode) needs to be set to be smaller than the voltage of the first electrode, so as to perform optical detection; the following examples are given as examples to further illustrate the present invention.
On the basis, as shown in fig. 3, the detecting module 003 includes an energy storage module 031 and a second switching module 032.
Specifically, the second switching module 031 is configured to control the light receiving part 100 and the temperature sensing part 200 to be in a reverse bias state when the first switching module 002 is turned on.
The energy storage module 031 is configured to store the first potential V1 (the first potential V1 of the first sub-electrode 11 of the light receiving part 100) and the second potential V2 (the second potential V2 of the second sub-electrode 12 of the temperature sensing part 200) in a state where the first switching module 002 is turned on.
The second switch module is further configured to, in an on state, adjust the first potential V1 and the second potential V2 stored in the energy storage module 031 to a first electrical signal parameter Y (a signal parameter representing a difference between the first potential V1 and the second potential V2), and read the first electrical signal parameter Y by detecting the voltage terminal Sense.
It should be noted that, in the present invention, the specific form of the first electrical signal parameter Y for representing the difference between the first potential V1 and the second potential V2 is not limited, and the first electrical signal parameter Y may be V1-V2; or V2-V1; it may be a sum or a difference between V1-V2 or V2-V1 and a constant, which is not specifically limited in the present invention, and may be determined according to the specific structure of each module in practice, as long as it is ensured that the difference between the first potential V1 and the second potential V2 can be obtained according to the actual circuit.
Specifically, as a preferred circuit design, a specific arrangement structure for each of the above modules is provided below; in the following description, "and/or" is only one kind of association relationship describing an associated object, and means that three relationships may exist, for example, a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
Schematically, in fig. 4a, the diode D1 represents the light receiving part 100, and the diode D2 represents the temperature sensing part 200;
wherein the first switching module 002 includes a first transistor T1 and a second transistor T2.
A gate of the first transistor T1 is connected to the first control signal terminal G1, a first pole of the first transistor T1 is connected to the first sub-electrode 11 (cathode of D1 in fig. 4 a) of the light-receiving part 100, and a second pole of the first transistor T1 is connected to the first node a; the gate of the second transistor T2 is connected to the first control signal terminal G1, the first pole of the second transistor T2 is connected to the second sub-electrode 12 (the cathode of D2 in fig. 4 a) of the temperature sensing part 200, and the second pole of the second transistor T2 is connected to the second node B.
The third sub-electrode 13 of the light receiving part 100 (the anode of D1 in fig. 4 a) and the fourth sub-electrode 14 of the temperature sensing part 200 are both connected to the first voltage terminal Vss.
And/or, the energy storage module 031 includes a storage capacitor Cst, one pole of the storage capacitor Cst is connected to the first node a, and the other pole is connected to the second node B.
And/or, the second switching module 032 includes a third transistor T3 and a fourth transistor T4.
The gate of the third transistor T3 is connected to the second control signal terminal G2, the first pole of the third transistor T3 is connected to the first node a, and the second pole of the third transistor T3 is connected to the sensing voltage terminal Sense. The gate of the fourth transistor T4 is connected to the second control signal terminal G2, the first pole of the fourth transistor T4 is connected to the second node B, and the second pole of the fourth transistor T4 is connected to the second voltage terminal Vdd.
It should be noted that, as shown in fig. 4a, the optical detection circuit of the present invention may include a detection module 003 connected to a light sensing device 001 through a first switch module 002.
As shown in fig. 5, one detecting module 003 is connected to different photosensitive devices 001 through different first switch modules 002; that is, if one first switch module 002 and one light sensing device 001 connected thereto are defined as one light sensing element T, one detection module 003 in the optical detection circuit is connected to a plurality of light sensing elements T.
Of course, the optical detection circuit of the present invention may further include a plurality of detection modules 003, and for a single detection module 003, as shown in fig. 4a, one detection module 003 is connected to one photosensitive device 001 through one first switch module 002; as shown in fig. 5, one detecting module 003 is connected to a plurality of photosensitive elements T; the present invention is not limited to this, and may be actually set as needed.
An embodiment of the present invention further provides a control method of the foregoing optical detection circuit, as shown in fig. 6, the control method includes:
step S101, a first control signal is input to the first switch module, and a second control signal is input to the detection module, so as to control the light receiving portion and the temperature sensing portion of the photosensitive device to be in a reverse bias state.
Step S102, inputting a first control signal to the first switch module, inputting a second control signal to the detection module, and reading a first electric signal parameter.
Further, as shown in fig. 7, the step S102 may include:
step S1021, inputting a first control signal to the first switch module, and storing a first potential of the first sub-electrode of the light receiving unit and a second potential of the second sub-electrode of the temperature sensing unit.
Step S1022, the second control signal is input to the detection module, and the first electrical signal parameter is read.
In the following, the steps S101, S1021, and S1022 for controlling the optical detection circuit will be further described with reference to the on/off of the transistor in fig. 4a and the control of the timing signal in fig. 4 b.
It should be noted that, in the following description, the on and off processes of the transistors in fig. 4a are all described by taking the case where all the transistors are N-type transistors as an example, but the present invention is not limited thereto, and all the transistors in fig. 4a may be P-type transistors, and it is needless to say that, in this case, the control signals in fig. 4b need to be inverted. In the following embodiments, each transistor is an N-type transistor, that is, each transistor is turned on under high level control.
Specifically, in step S101: for inputting the first control signal to the first switch module and the second control signal to the detection module to control the light receiving portion and the temperature sensing portion of the photosensitive device to be in the reverse bias state, referring to the "charging stage" in fig. 4a and 4b, the specific control process may be as follows:
when a first control signal of a high level is input to the first control signal terminal G1 of the first switch module 002 and a second control signal of a high level is input to the second control signal terminal G2 of the second switch module 002 of the detection module 003, the first transistor T1, the second transistor T2, the third transistor T3 and the fourth transistor T4 are turned on under the high level control of the first control signal and the second control signal, and a voltage equal to the second voltage terminal Vdd and greater than the first voltage terminal Vss is input to the detection voltage terminal Sense, so as to control the light receiving part (D1) and the temperature sensing part (D2) of the photo sensor device to be in a reverse bias state.
Next, referring to the integration phase in fig. 4b, the first control signal and the second control signal are shifted to the low level potential, the first transistor T1, the second transistor T2, the third transistor T3, and the fourth transistor T4 are turned off, the light receiving portion (D1) and the temperature sensing portion (D2) in the reverse bias state start integration when light is incident to the light receiving portion (D1).
Next, as for the step S102 (including step S1021 and step S1022) that the first control signal is input to the first switch module, the second control signal is input to the detection module, and the first electrical signal parameter is read, the specific control process may be as follows:
referring to fig. 4b, during the storage phase, the first control signal inputted from the first control signal terminal G1 goes to high level, the first transistor T1 and the second transistor T2 are turned on, and at this time, the first potential V1 (photo signal and thermoelectric signal) of the first sub-electrode of the light receiving portion (D1) and the second potential V2 (thermoelectric signal) of the second sub-electrode of the temperature sensing portion (D2) are stored in the storage capacitor Cst, and the voltages of the two plates of the storage capacitor Cst are the first potential V1 and the second potential V2 respectively, and the storage voltage difference is V2-V1.
Then, referring to the reading phase in fig. 4B, the first control signal terminal G1 in the first switch module 002 goes low, the first transistor T1 and the second transistor T2 are turned off, the second control signal terminal G2 inputs the second control signal and goes high, the third transistor T3 and the fourth transistor T4 are turned on, and then the adjustment phase (fig. 4B) is entered, the voltage (V2) on the plate of the storage capacitor Cst connected to the second node B is shifted under the action of the second voltage terminal Vdd, and the voltage V1 on the plate of the storage capacitor Cst connected to the first node a is adjusted to Vdd- (V2-V1), and the signal parameter is read by detecting the voltage terminal Sense.
It should be understood that, for Vdd- (V2-V1) as mentioned above, Vdd is a fixed voltage applied to the second voltage terminal, and is a known parameter, that is, the signal parameter can be directly used as a signal parameter for representing the difference between the first potential V1 and the second potential V2, that is, the first electrical signal parameter Y, and directly read the first electrical signal parameter (it can be understood that the thermoelectric signal is eliminated from the first electrical signal parameter, so as to eliminate or reduce the problem of inaccurate photocurrent detection result caused by the thermoelectric signal in the prior art).
The embodiment of the invention also provides a display device, which comprises any one of the optical detection circuits; and the display device comprises a plurality of sub-pixels arranged in a matrix, and a photosensitive device in the optical detection circuit is arranged corresponding to a single sub-pixel and used for sensing the brightness of the sub-pixel so as to detect the actual brightness of the sub-pixel, thereby compensating each sub-pixel according to the detection result of the actual brightness.
Since the display device includes the photosensitive device described above, the same structure and advantageous effects as those of the photosensitive device provided in the foregoing embodiment are obtained. Since the foregoing embodiments have described the structure and advantageous effects of the photosensitive device in detail, detailed description is omitted here.
It should be noted that, in the embodiment of the present invention, the display device may specifically include at least a liquid crystal display panel and an organic light emitting diode display panel, for example, the display panel may be applied to any product or component with a display function, such as a display, a television, a digital photo frame, a mobile phone, or a tablet computer.
Of course, in practice, it is preferable that, as shown in fig. 8, for the optical detection circuit in the present invention (fig. 8 shows only the light sensing device 001 in the circuit), it is generally applied to an organic light emitting diode display panel in most cases; as for the type of the organic light emitting diode display panel, the present invention is not particularly limited, and may be top emission, or bottom emission; it is sufficient to ensure that light emitted from an Organic Light Emitting Device (OLED) in the organic light emitting diode display panel can be incident on a light receiving portion in a light sensing device in an optical detection circuit.
In addition, for the display device including a plurality of sub-pixels arranged in a matrix, in order to simplify the optical detection circuit and the whole optical detection process, it is preferable that, referring to fig. 5, a plurality of photosensitive elements T (a first switch module 002 and a photosensitive device 001 connected thereto) connected to one detection module 003 are disposed in one-to-one correspondence with the sub-pixels located in the same row; that is, the plurality of photosensitive elements T corresponding to the sub-pixels in the same row are controlled by one detecting module 003, and the sub-pixels in different rows correspond to different detecting modules 003.
It should be noted here that the conventional display device generally performs display by progressive scanning, and the display device including the optical detection circuit according to the present invention needs to consider both display and optical detection, and therefore, in order to avoid interference between display and optical detection, it is actually preferable that display driving and optical detection driving are performed in a time-division manner.
Those of ordinary skill in the art will understand that: all or part of the steps for implementing the method embodiments may be implemented by hardware related to program instructions, and the program may be stored in a computer readable storage medium, and when executed, the program performs the steps including the method embodiments; and the aforementioned storage medium includes: various media that can store program codes, such as ROM, RAM, magnetic or optical disks.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (11)
1. A photosensitive device comprising a first electrode and a second electrode disposed opposite to each other, and an optoelectronic semiconductor device located between and in contact with the first electrode and the second electrode;
wherein the optoelectronic semiconductor device is divided into a light receiving region and a temperature sensing region;
the first electrode includes: a first sub-electrode located in the light receiving region, and a second sub-electrode located in the temperature sensing region; the second electrode includes: a third sub-electrode located in the light receiving region, and a fourth sub-electrode located in the temperature sensing region;
two sub-electrodes of at least one of the first electrode and the second electrode are not connected;
the photoelectric semiconductor device is positioned in the light receiving area, and the photoelectric semiconductor device, the first sub-electrode and the third sub-electrode form a light receiving part; the photoelectric semiconductor device is positioned in the temperature sensing region, and the photoelectric semiconductor device, the second sub-electrode and the fourth sub-electrode form a temperature sensing part;
wherein at least one of the first sub-electrode and the third sub-electrode is a transparent electrode; the second sub-electrode and the fourth sub-electrode are both opaque electrodes.
2. The photosensitive device of claim 1,
under the condition that the first sub-electrode is an opaque electrode, the first sub-electrode and the second sub-electrode are made of the same layer and the same material;
and under the condition that the third sub-electrode is an opaque electrode, the third sub-electrode and the fourth sub-electrode are made of the same layer and the same material.
3. The photosensitive device of claim 2,
in the case that the first sub-electrode is an opaque electrode, the first sub-electrode and the second sub-electrode are of an integral structure;
and under the condition that the third sub-electrode is an opaque electrode, the third sub-electrode and the fourth sub-electrode are of an integral structure.
4. An optical detection circuit comprising the light-sensing device according to any one of claims 1 to 3;
the optical detection circuit further comprises a first switch module and a detection module;
the detection module is connected with the first switch module, and the first switch module is respectively connected with the light receiving part and the temperature sensing part through a first sub-electrode and a second sub-electrode which are independently arranged in a first electrode of the photosensitive device;
the first switch module is used for controlling the on-off between the photosensitive device and the detection module in an on or off state;
the detection module is used for controlling the light receiving part and the temperature sensing part to be in a reverse bias state when the first switch module is turned on;
the detection module is further configured to store a first potential of the first sub-electrode of the light receiving portion and a second potential of the second sub-electrode of the temperature sensing portion in a state where the first switch module is turned on, and read a first electrical signal parameter representing a difference between the first potential and the second potential through a detection voltage terminal.
5. The optical detection circuit of claim 4,
the detection module comprises an energy storage module and a second switch module;
the second switch module is used for controlling the light receiving part and the temperature sensing part to be in a reverse bias state when the first switch module is in an on state;
the energy storage module is used for storing the first potential and the second potential when the first switch module is switched on;
the second switch module is further configured to adjust the first potential and the second potential stored in the energy storage module to the first electrical signal parameter in an on state, and read the first electrical signal parameter through the detection voltage terminal.
6. The optical detection circuit of claim 5,
the first switch module comprises a first transistor and a second transistor;
a gate of the first transistor is connected to a first control signal terminal, a first electrode of the first transistor is connected to the first sub-electrode of the light receiving unit, and a second electrode of the first transistor is connected to a first node;
a gate of the second transistor is connected to the first control signal terminal, a first pole of the second transistor is connected to the second sub-electrode of the temperature sensing unit, and a second pole of the second transistor is connected to a second node;
the third sub-electrode of the light receiving part and the fourth sub-electrode of the temperature sensing part are both connected with a first voltage terminal;
and/or the energy storage module comprises a storage capacitor, one pole of the storage capacitor is connected with the first node, and the other pole of the storage capacitor is connected with the second node;
and/or the second switch module comprises a third transistor and a fourth transistor;
the grid electrode of the third transistor is connected with a second control signal end, the first pole of the third transistor is connected with the first node, and the second pole of the third transistor is connected with the voltage detecting end;
the gate of the fourth transistor is connected to the second control signal terminal, the first pole of the fourth transistor is connected to the second node, and the second pole of the fourth transistor is connected to the second voltage terminal.
7. The optical detection circuit according to any one of claims 4 to 6, wherein one of the photo-sensing devices and one of the first switch modules connected thereto form a photo-sensing assembly;
one of the detecting modules in the optical detection circuit is connected with a plurality of photosensitive assemblies.
8. A control method of an optical detection circuit according to any one of claims 5 to 7, characterized in that the control method comprises:
inputting a first control signal to the first switch module, and inputting a second control signal to the detection module, and controlling a light receiving part and a temperature sensing part in the photosensitive device to be in a reverse bias state;
and inputting a first control signal to the first switch module, inputting a second control signal to the detection module, and reading a first electric signal parameter.
9. The control method of an optical detection circuit according to claim 8,
the inputting a first control signal to the first switch module and a second control signal to the detecting module, and the reading a first electrical signal parameter includes:
inputting a first control signal to the first switch module, and storing a first potential of a first sub-electrode of a light receiving part and a second potential of a second sub-electrode of a temperature sensing part;
and inputting a second control signal to the detection module, and reading the parameter of the first electric signal.
10. A display device comprising the optical detection circuit according to any one of claims 5 to 7;
the display device includes a plurality of sub-pixels arranged in a matrix,
the light sensing device in the optical detection circuit is arranged corresponding to a single sub-pixel and used for sensing the brightness of the sub-pixel.
11. The display device according to claim 10, wherein the optical detection circuit has a plurality of photosensitive elements connected to the same detection module, and the plurality of photosensitive elements are disposed in one-to-one correspondence with the sub-pixels in the same row.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698494A (en) * | 1985-06-06 | 1987-10-06 | Fuji Electric Co., Ltd. | Image sensor and method of making |
| JP2001027564A (en) * | 1999-07-14 | 2001-01-30 | Sony Corp | Optical detecting device |
| JP3537289B2 (en) * | 1997-05-20 | 2004-06-14 | 松下電器産業株式会社 | Method and apparatus for manufacturing active matrix substrate |
| CN101256294A (en) * | 2007-02-26 | 2008-09-03 | 爱普生映像元器件有限公司 | Electro-optical device, semiconductor device, display device, and electronic apparatus having the display device |
| CN102235912A (en) * | 2010-03-26 | 2011-11-09 | 精工爱普生株式会社 | Pyroelectric detector and method for manufacturing same, pyroelectric detection device, and electronic instrument |
| CN103558224A (en) * | 2013-11-14 | 2014-02-05 | 京东方科技集团股份有限公司 | Automatic optical detection method and equipment |
| CN104393024A (en) * | 2014-12-03 | 2015-03-04 | 京东方科技集团股份有限公司 | OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof |
| CN104701458A (en) * | 2015-03-24 | 2015-06-10 | 京东方科技集团股份有限公司 | Organic light emitting device and manufacturing method thereof and display device |
| CN107122750A (en) * | 2017-05-03 | 2017-09-01 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011065558A1 (en) * | 2009-11-30 | 2011-06-03 | シャープ株式会社 | Display device |
-
2018
- 2018-04-12 CN CN201810327931.0A patent/CN108492759B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698494A (en) * | 1985-06-06 | 1987-10-06 | Fuji Electric Co., Ltd. | Image sensor and method of making |
| JP3537289B2 (en) * | 1997-05-20 | 2004-06-14 | 松下電器産業株式会社 | Method and apparatus for manufacturing active matrix substrate |
| JP2001027564A (en) * | 1999-07-14 | 2001-01-30 | Sony Corp | Optical detecting device |
| CN101256294A (en) * | 2007-02-26 | 2008-09-03 | 爱普生映像元器件有限公司 | Electro-optical device, semiconductor device, display device, and electronic apparatus having the display device |
| CN102235912A (en) * | 2010-03-26 | 2011-11-09 | 精工爱普生株式会社 | Pyroelectric detector and method for manufacturing same, pyroelectric detection device, and electronic instrument |
| CN103558224A (en) * | 2013-11-14 | 2014-02-05 | 京东方科技集团股份有限公司 | Automatic optical detection method and equipment |
| CN104393024A (en) * | 2014-12-03 | 2015-03-04 | 京东方科技集团股份有限公司 | OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof |
| CN104701458A (en) * | 2015-03-24 | 2015-06-10 | 京东方科技集团股份有限公司 | Organic light emitting device and manufacturing method thereof and display device |
| CN107122750A (en) * | 2017-05-03 | 2017-09-01 | 京东方科技集团股份有限公司 | A kind of optical fingerprint identification device and display panel |
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