CN104393024A - OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof - Google Patents
OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof Download PDFInfo
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- CN104393024A CN104393024A CN201410727630.9A CN201410727630A CN104393024A CN 104393024 A CN104393024 A CN 104393024A CN 201410727630 A CN201410727630 A CN 201410727630A CN 104393024 A CN104393024 A CN 104393024A
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Abstract
The invention discloses an OLED pixel structure as well as a preparation method, an ultraviolet light detection method and an ultraviolet light detection device thereof in order to solve the problems that an array substrate of an existing ultraviolet light detection device is complicated in structure and relatively high in preparation cost. The OLED pixel structure comprises a substrate, a light shielding layer, a transparent insulating layer, a light sensing TFT, a switch TFT, an anode, a pixel definition layer, an organic light emitting layer and a transparent cathode, wherein the light shielding layer and the transparent insulating layer are sequentially formed on the substrate; the light shielding layer comprises a light transmitting region; the light sensing TFT and the switch TFT are formed on the transparent insulating layer; the light sensing TFT is arranged above the light transmitting region; a channel region of the light sensing TFT directly faces to the light transmitting region; the light sensing TFT and the switch TFT comprise source and drain metal layers, active layers, grid insulating layers, grid electrodes and passivation layers formed on the transparent insulating layer in sequence; the source electrode o the light sensing TFT is electrically connected with the drain electrode of the switch TFT; the anode, the pixel definition layer, the organic light emitting layer and the transparent cathode are formed on the passivation layer; the anode is electrically connected with the source electrode of the switch TFT by passing through a through hole.
Description
Technical field
The present invention relates to ultraviolet technical field of light detection, particularly relate to OLED pixel structure and preparation method thereof, ultraviolet light detection method and device.
Background technology
Ultraviolet light has certain injury to human body skin, and stronger ultraviolet light can make skin burn, is in for a long time in stronger ultraviolet light environments and even may causes cutaneous lesions.Such as, under being directly exposed to sunlight, under altitude environment, under the medical work environment with ultraviolet light or under the production environment with ultraviolet light, all likely make human body skin impaired.In order to whether there is stronger ultraviolet light in environment, judge the intensity of ultraviolet light, by Organic Light Emitting Diode (Organic Light Emitting Diode in prior art, OLED) Display Technique is combined with detection technique and realizes showing the ultraviolet function of testing environment in real time, it is high that OLED display has luminosity, driving voltage is low, fast response time, the ultra-thin feature such as frivolous, be easy to carry to site environment or in moving and detect ultraviolet light, be used in and be applied to miniscope, head mounted display (HeadMount Display, HMD), head-up indicator (Head UP Display, HUD) and in the ultraviolet detector of interactive HMD or in real time display.
Present technology is normally at thin-film transistor (the Thin Film Transistor of display array substrate, TFT) outside, prepare PN junction as photoelectric conversion layer, PN junction makes the TFT conducting be connected when receiving outside ultraviolet light after, control display shows, thus realizes the detection of the ultraviolet light of outside and show.But, based on prior art, need unit outside tft array that the light signal change-over circuit of PN junction formation is set, therefore make the complex structure of array base palte; Meanwhile, outside TFT processing procedure, need the processing procedure increasing PN junction, add preparation cost.
Summary of the invention
The object of this invention is to provide OLED pixel structure and preparation method thereof, ultraviolet light detection method and device, to solve the problem that array base-plate structure is complicated, preparation cost is higher of existing ultraviolet light checkout gear.
The object of the invention is to be achieved through the following technical solutions:
The embodiment of the present invention provides a kind of OLED pixel structure, comprising:
Lining underlay substrate;
Be formed at the light shield layer on described underlay substrate and transparent insulating layer successively, described light shield layer has transparent area;
Be formed at the photosensitive TFT on described transparent insulating layer and switching TFT, described photosensitive TFT is arranged at the top of described transparent area, and the channel region of described photosensitive TFT is just to described transparent area; Wherein, described photosensitive TFT and described switching TFT comprise the source-drain electrode metal level, active layer, gate insulator, gate electrode and the passivation layer that are formed at successively on described transparent insulating layer, described source-drain electrode metal level comprises source electrode and drain electrode, and the source electrode of described photosensitive TFT is electrically connected with the drain electrode of described switching TFT;
Be formed at the anode on described passivation layer, pixel define layer, organic luminous layer and transparent cathode, described anode is electrically connected by the drain electrode of via hole with described switching TFT.
In the embodiment of the present invention, the described photosensitive TFT of OLED pixel structure, the corresponding described transparent area of its channel region and receive by described transparent area through outside ultraviolet light, because the source electrode of described photosensitive TFT is connected with the drain electrode of described switching TFT, therefore the organic luminous layer that described photosensitive TFT can make described switching TFT control described OLED pixel structure after ultraviolet light being detected carries out luminescence, thus to the detection of outside ultraviolet light and display.
Preferably, described OLED pixel structure also comprises the planarization layer be arranged between described passivation layer and described anode.
Preferably, described photosensitive TFT and described switching TFT are N-type metal oxide TFT.
Preferably, described underlay substrate is quartz base plate.In the embodiment of the present invention, using quartz base plate as described underlay substrate, the transmitance of ultraviolet light can be increased, make through ultraviolet light loss reduce, make the detection of described OLED pixel structure to ultraviolet light more accurate.
Preferably, the material of described light shield layer is lighttight metal or organic substance.
Preferably, the material of described transparent insulating layer is SiO2, and thickness is 1000-3000 dust.In the present embodiment, described transparent insulating layer can provide more smooth surface, is conducive to the preparation of OLED pixel cell.
Preferably, the material of described anode is metal material to ultraviolet light high reverse--bias or composite film.
Embodiment of the present invention beneficial effect is as follows: the described photosensitive TFT of OLED pixel structure, the corresponding described transparent area of its channel region and receive by described transparent area through outside ultraviolet light, because the source electrode of described photosensitive TFT is connected with the drain electrode of described switching TFT, therefore the organic luminous layer that described photosensitive TFT can make described switching TFT control described OLED pixel structure after ultraviolet light being detected carries out luminescence, thus to the detection of outside ultraviolet light and display; Described photosensitive TFT and described switching TFT are identical structure and are synchronously formed, and therefore do not need extra preparation technology, reduce preparation cost; Described photosensitive TFT can provide the signal of telecommunication for described switching TFT after switch, and therefore not needing increases PN junction and interlock circuit, and the structure of array base palte is relatively simple.
The embodiment of the present invention provides a kind of ultraviolet light checkout gear, comprises at least one as above OLED pixel structure of providing of embodiment.
Embodiment of the present invention beneficial effect is as follows: the described photosensitive TFT of OLED pixel structure, the corresponding described transparent area of its channel region and receive by described transparent area through outside ultraviolet light, because the source electrode of described photosensitive TFT is connected with the drain electrode of described switching TFT, therefore the organic luminous layer that described photosensitive TFT can make described switching TFT control described OLED pixel structure after ultraviolet light being detected carries out luminescence, thus to the detection of outside ultraviolet light and display; Described photosensitive TFT and described switching TFT are identical structure and are synchronously formed, and therefore do not need extra preparation technology, reduce preparation cost; Described photosensitive TFT can provide the signal of telecommunication for described switching TFT after switch, and therefore not needing increases PN junction and interlock circuit, and the structure of array base palte is relatively simple.
The embodiment of the present invention provides a kind of preparation method of OLED pixel structure, comprising:
One underlay substrate is provided;
Described underlay substrate is formed light shield layer film, makes light shield layer film form the light shield layer comprising transparent area by patterning processes;
Transparent insulating layer is formed at described light shield layer;
On described transparent insulating layer, form source electrode and drain electrode place layer, active layer, gate insulator, gate electrode place layer and passivation layer successively, thus interlock system is for completing photosensitive TFT and switching TFT; Wherein, described photosensitive TFT is arranged at the top of described transparent area, and the channel region of described photosensitive TFT is just to described transparent area, and the source electrode of described photosensitive TFT is electrically connected with the drain electrode of described switching TFT;
On described passivation layer, anode, pixel define layer, organic luminous layer and transparent cathode successively, and described anode is electrically connected by the drain electrode of via hole with described switching TFT.
Preferably, be also included between described passivation layer and described anode and form planarization layer.
Embodiment of the present invention beneficial effect is as follows: the described photosensitive TFT of OLED pixel structure, the corresponding described transparent area of its channel region and receive by described transparent area through outside ultraviolet light, because the source electrode of described photosensitive TFT is connected with the drain electrode of described switching TFT, therefore the organic luminous layer that described photosensitive TFT can make described switching TFT control described OLED pixel structure after ultraviolet light being detected carries out luminescence, thus to the detection of outside ultraviolet light and display; Described photosensitive TFT and described switching TFT are identical structure and are synchronously formed, and therefore do not need extra preparation technology, reduce preparation cost; Described photosensitive TFT can provide the signal of telecommunication for described switching TFT after switch, and therefore not needing increases PN junction and interlock circuit, and the structure of array base palte is relatively simple.
The embodiment of the present invention provides a kind of ultraviolet light detection method, comprising:
Make the source electrode of photosensitive TFT connect high level signal, the gate electrode of described photosensitive TFT connects the first control signal, and the gate electrode of switching TFT connects the second control signal;
In first time period, described first control signal is high level, and described second control signal is low level, described photosensitive TFT conducting, and described switching TFT turns off;
In the second time period, described first control signal is low level, described second control signal is high level, described photosensitive TFT turns off, described switching TFT conducting, conducting after described photosensitive TFT detects the ultraviolet light of transparent area incidence the high level signal received by self drain electrode are supplied to the anode of OLED pixel structure through described switching TFT, make the organic luminous layer of OLED pixel structure luminous;
3rd time period, described first control signal repeated first time period and the sequential of the second time period, and reset described photosensitive TFT, and described second control signal is low level, and described switching TFT is turned off to the end of scan.
Embodiment of the present invention beneficial effect is as follows: the corresponding described transparent area of the channel region of described photosensitive TFT and receive by described transparent area through outside ultraviolet light, because the source electrode of described photosensitive TFT is connected with the drain electrode of described switching TFT, therefore that described switching TFT can be made after ultraviolet light being detected to control the organic luminous layer of described OLED pixel structure is luminous for described photosensitive TFT, thus to the detection of outside ultraviolet light and display.
Accompanying drawing explanation
The generalized section of a kind of OLED pixel structure that Fig. 1 provides for the embodiment of the present invention;
The generalized section of the another kind of OLED pixel structure that Fig. 2 provides for the embodiment of the present invention;
The schematic top plan view of OLED pel array in a kind of ultraviolet light checkout gear that Fig. 3 provides for the embodiment of the present invention;
The flow chart of the preparation method of a kind of OLED pixel structure that Fig. 4 provides for the embodiment of the present invention;
The flow chart of a kind of ultraviolet light detection method that Fig. 5 provides for the embodiment of the present invention;
Fig. 6 for OLED pixel structure that the embodiment of the present invention provides detect for ultraviolet light time, the schematic diagram that photosensitive TFT is connected with switching TFT;
The Control timing sequence figure of the photosensitive TFT that Fig. 7 provides for the embodiment of the present invention and switching TFT.
Reference numeral:
Underlay substrate 1; Light shield layer 2; Transparent area 21; Transparent insulating layer 3; Photosensitive TFT 4; The drain electrode 41 of photosensitive TFT; The source electrode 42 of photosensitive TFT; The gate electrode 43 of photosensitive TFT; Switching TFT 5; The drain electrode 51 of switching TFT; The source electrode 52 of switching TFT; The gate electrode 53 of switching TFT; Electrode 6; The active layer 7 of photosensitive TFT; The active layer 8 of switching TFT; Gate insulator 9; Passivation layer 10; Flatness layer 11; Anode 12; Pixel defines layer 13; Organic luminous layer 14; Negative electrode 15.
Embodiment
Be described in detail below in conjunction with the implementation procedure of Figure of description to the embodiment of the present invention.It should be noted that same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
See Fig. 1, the invention provides a kind of OLED pixel structure, comprising:
Underlay substrate 1, be formed at the light shield layer 2 on underlay substrate 1 and transparent insulating layer 3 successively, light shield layer 2 has a transparent area 21, photosensitive TFT 4 and switching TFT 5, photosensitive TFT 4 and switching TFT 5 comprise the source-drain electrode metal level be formed at successively on transparent insulating layer 3 respectively, active layer (the active layer 7 of such as photosensitive TFT4, the active layer 8 of switching TFT 5), gate insulator 9, gate electrode (the gate electrode 43 of such as photosensitive TFT4, the gate electrode 53 of switching TFT 5) and passivation layer 10, photosensitive TFT 4 is arranged at the top of transparent area 21, the channel region of photosensitive TFT 4 is just to transparent area 21, source-drain electrode metal level comprises source electrode and drain electrode (drain electrode 41 of such as photosensitive TFT 4 and source electrode 42, the drain electrode 51 of switching TFT 5 and source electrode 52), the source electrode 42 of photosensitive TFT 4 is electrically connected with the drain electrode 51 of switching TFT 5.It should be noted that, in order to make the structure of this OLED pixel structure of simplification, the drain electrode 51 of the source electrode 42 of photosensitive TFT 4 and switching TFT 5 can be made to share an electrode, and the Reference numeral in the electrode 6, Fig. 2 in OLED pixel structure as shown in Figure 2 and Fig. 1 have identical meanings.Meanwhile, in order to not affect passing through of ultraviolet light, gate insulator 9 can adopt SiO2 to prepare.
Be formed at the anode 12 on passivation layer 10, pixel define layer 13, organic luminous layer 14 and transparent cathode 15, anode 12 is electrically connected with the source electrode 52 of switching TFT 5 by via hole.The light sent in order to avoid the organic luminous layer 14 of OLED pixel structure on the impact of photosensitive TFT 4 and by transparent anode 12 to the ultraviolet light of the direction incidence of photosensitive TFT 4 on the impact of photosensitive TFT 4, anode 12 can adopt metal material to ultraviolet light high reverse--bias or composite film preparation.Preferably, the material of anode 12 is silver or the composite film for ITO-silver-ITO.
Photosensitive TFT 4 is receiving conducting after by the ultraviolet light of transparent area 21 incidence, and the source electrode 42 of photosensitive TFT 4 provides the signal of telecommunication to the drain electrode 51 of switching TFT 5; Anode 12 is electrically connected with the source electrode 52 of switching TFT 5 by via hole, and the signal of telecommunication that the source electrode 41 of photosensitive TFT 4 receives is provided to anode 12 through switching TFT 5 by photosensitive TFT 4 after switch, thus makes organic luminous layer 14 luminous.
In the embodiment of the present invention, the photosensitive TFT 4 of OLED pixel structure, the corresponding transparent area 21 of its channel region and receive by transparent area 21 through outside ultraviolet light, because the source electrode 42 of photosensitive TFT 4 is connected with the drain electrode 51 of switching TFT 5, therefore the organic luminous layer 14 that photosensitive TFT 4 can make switching TFT 5 control OLED pixel structure after ultraviolet light being detected carries out luminescence, thus to the detection of outside ultraviolet light and display.
Preferably, photosensitive TFT and switching TFT 5 are N-type metal oxide TFT.In the present embodiment, adopt N-type metal oxide TFT, to realize the detection of photosensitive TFT to ultraviolet light.
Preferably, OLED pixel structure also comprises the flatness layer 11 be formed between passivation layer 10 and anode 12.Flatness layer 11 can provide more smooth surface, is conducive to the preparation of OLED pixel cell.
Preferably, underlay substrate 1 is quartz base plate.In the embodiment of the present invention, using quartz base plate as underlay substrate 1, the transmitance of ultraviolet light can be increased, make through ultraviolet light loss reduce, make the detection of OLED pixel structure to ultraviolet light more accurate.
Preferably, the material of light shield layer 2 is lighttight metal or organic substance.
Preferably, the material of transparent insulating layer 3 is SiO2, and thickness is 1000-3000 dust.In the present embodiment, transparent insulating layer 3 can provide more smooth surface, is conducive to the preparation of OLED pixel cell.
Embodiment of the present invention beneficial effect is as follows: the photosensitive TFT of OLED pixel structure, the corresponding transparent area of its channel region and receive by transparent area through outside ultraviolet light, because the source electrode of photosensitive TFT is connected with the drain electrode of switching TFT, therefore photosensitive TFT can make switching TFT control the organic luminous layer of OLED pixel structure to carry out luminescence after ultraviolet light being detected, thus to the detection of outside ultraviolet light and display; Photosensitive TFT and switching TFT are identical structure and are synchronously formed, and therefore do not need extra preparation technology, reduce preparation cost; Photosensitive TFT can provide the signal of telecommunication for switching TFT after switch, and therefore not needing increases PN junction and interlock circuit, and the structure of array base palte is relatively simple.
The embodiment of the present invention provides a kind of ultraviolet light checkout gear, comprises the OLED pixel structure that as above embodiment provides.The schematic top plan view of OLED pel array in this ultraviolet light checkout gear shown in Figure 3, wherein underlay substrate 1 is provided with light shield layer 2, the channel region that light shield layer 2 has the photosensitive TFT (not shown) of multiple transparent areas 21, OLED pixel cell 20 is corresponding with transparent area 21.
Embodiment of the present invention beneficial effect is as follows: the photosensitive TFT of OLED pixel structure, the corresponding transparent area of its channel region and receive by transparent area through outside ultraviolet light, because the source electrode of photosensitive TFT is connected with the drain electrode of switching TFT, therefore photosensitive TFT can make switching TFT control the organic luminous layer of OLED pixel structure to carry out luminescence after ultraviolet light being detected, thus to the detection of outside ultraviolet light and display; Photosensitive TFT and switching TFT are identical structure and are synchronously formed, and therefore do not need extra preparation technology, reduce preparation cost; Photosensitive TFT can provide the signal of telecommunication for switching TFT after switch, and therefore not needing increases PN junction and interlock circuit, and the structure of array base palte is relatively simple.
See Fig. 4, the embodiment of the present invention provides a kind of preparation method of OLED pixel structure, comprising:
401, one underlay substrate is provided, underlay substrate is formed light shield layer film, make light shield layer film form the light shield layer comprising transparent area by patterning processes.It should be noted that, the preparation of this transparent area, is determined according to the arrangement position of the TFT designed in advance.
402, on light shield layer, form transparent insulating layer, source electrode and drain electrode place layer, active layer, gate insulator, gate electrode place layer and passivation layer successively, thus interlock system is for completing photosensitive TFT and switching TFT; Wherein, photosensitive TFT is arranged at the top of transparent area, and the channel region of photosensitive TFT is just to transparent area, and the source electrode of photosensitive TFT is electrically connected with the drain electrode of switching TFT.
403, on passivation layer, form planarization layer successively, anode, pixel define layer, organic luminous layer and transparent cathode, anode is electrically connected with the drain electrode of switching TFT by via hole.
Embodiment of the present invention beneficial effect is as follows: the photosensitive TFT of OLED pixel structure, the corresponding transparent area of its channel region and receive by transparent area through outside ultraviolet light, because the source electrode of photosensitive TFT is connected with the drain electrode of switching TFT, therefore photosensitive TFT can make switching TFT control the organic luminous layer of OLED pixel structure to carry out luminescence after ultraviolet light being detected, thus to the detection of outside ultraviolet light and display; Photosensitive TFT and switching TFT are identical structure and are synchronously formed, and therefore do not need extra preparation technology, reduce preparation cost; Photosensitive TFT can provide the signal of telecommunication for switching TFT after switch, and therefore not needing increases PN junction and interlock circuit, and the structure of array base palte is relatively simple.
See Fig. 5, a kind of method that the embodiment of the present invention provides ultraviolet light to detect, comprising:
501, make the source electrode of photosensitive TFT connect high level signal, the gate electrode of photosensitive TFT connects the first control signal, and the gate electrode of switching TFT connects the second control signal.
502, in first time period, the first control signal is high level, and the second control signal is low level, photosensitive TFT conducting, and switching TFT turns off.
503, in the second time period, first control signal is low level, second control signal is high level, photosensitive TFT turns off, switching TFT conducting, photosensitive TFT detects the ultraviolet light of transparent area incidence, if ultraviolet light detected, photosensitive TFT conducting the high level signal received by self drain electrode are supplied to the anode of OLED pixel structure through switching TFT, make the organic luminous layer of OLED pixel structure luminous.
504, the 3rd time period is to the end of scan, and the first control signal repeats first time period and the sequential of the second time period, and reset photosensitive TFT, and the second control signal is low level, and switching TFT is turned off.
When the OLED pixel structure that shows Fig. 6 detects for ultraviolet light, the schematic diagram that photosensitive TFT is connected with switching TFT, wherein photosensitive TFT is labeled as M1, switching TFT is labeled as M2, the source electrode of M1 meets high level signal VDD, the drain electrode of M1 connects the source electrode of M2, and the drain electrode of M2 connects the anode of OLED, the minus earth VSS of OLED.M1 grid can be made to meet the first control signal V1, and M2 grid meets the second control signal V2.See Fig. 7, show the Control timing sequence figure of photosensitive TFT and switching TFT, wherein: first time period, the first control signal V1 is high level, and the second control signal V2 is low level, and M1 is conducting state, and M2 is off state, and OLED is not luminous; Second time period, the first control signal V1 is low level, and the second control signal V2 is high level signal, and M1 is off state, M2 conducting, if ultraviolet light do not detected, OLED is not luminous, if ultraviolet light detected, then M1 is switched on, and high level signal VDD is provided to the anode of OLED, makes OLED luminous; The size of M1 firing current is relevant to ultraviolet ray intensity, and therefore OLED luminous intensity is relevant to ultraviolet ray intensity.3rd time terminated to detection, and the first control signal V1 repeats first time period and the sequential of the second time period (as shown in V11 in the first control signal V1), and M1 is resetted, and the second control signal V2 is low level, and M2 is turned off.
Embodiment of the present invention beneficial effect is as follows: the corresponding transparent area of the channel region of photosensitive TFT and receive by transparent area through outside ultraviolet light, because the source electrode of photosensitive TFT is connected with the drain electrode of switching TFT, therefore photosensitive TFT can make switching TFT control the organic luminous layer of OLED pixel structure to carry out luminescence after ultraviolet light being detected, thus to the detection of outside ultraviolet light and display.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (11)
1. an Organic Light Emitting Diode OLED pixel structure, is characterized in that, comprising:
Underlay substrate;
Be formed at the light shield layer on described underlay substrate and transparent insulating layer successively, described light shield layer has transparent area;
Be formed at the photosensitive TFT on described transparent insulating layer and switching TFT, described photosensitive TFT is arranged at the top of described transparent area, and the channel region of described photosensitive TFT is just to described transparent area; Wherein, described photosensitive TFT and described switching TFT comprise the source-drain electrode metal level, active layer, gate insulator, gate electrode and the passivation layer that are formed at successively on described transparent insulating layer, described source-drain electrode metal level comprises source electrode and drain electrode, and the source electrode of described photosensitive TFT is electrically connected with the drain electrode of described switching TFT;
Be formed at the anode on described passivation layer, pixel define layer, organic luminous layer and transparent cathode, described anode is electrically connected by the source electrode of via hole with described switching TFT.
2. OLED pixel structure as claimed in claim 1, it is characterized in that, described OLED pixel structure also comprises the planarization layer be arranged between described passivation layer and described anode.
3. OLED pixel structure as claimed in claim 1 or 2, it is characterized in that, described photosensitive TFT and described switching TFT are N-type metal oxide TFT.
4. OLED pixel structure as claimed in claim 1 or 2, it is characterized in that, described underlay substrate is quartz base plate.
5. OLED pixel structure as claimed in claim 1 or 2, it is characterized in that, the material of described light shield layer is lighttight metal or organic substance.
6. OLED pixel structure as claimed in claim 1 or 2, it is characterized in that, the material of described transparent insulating layer is SiO2, and thickness is 1000-3000 dust.
7. OLED pixel structure as claimed in claim 1 or 2, is characterized in that, the material of described anode is metal material to ultraviolet light high reverse--bias or composite film.
8. a ultraviolet light checkout gear, is characterized in that, comprises at least one OLED pixel structure as described in any one of claim 1 to 7.
9. a preparation method for OLED pixel structure, is characterized in that, comprising:
One underlay substrate is provided, described underlay substrate is formed light shield layer film, make light shield layer film form the light shield layer comprising transparent area by patterning processes;
On described light shield layer, form transparent insulating layer, source-drain electrode metal level, active layer, gate insulator, gate electrode and passivation layer successively, thus interlock system is for completing photosensitive TFT and switching TFT; Wherein, described photosensitive TFT is arranged at the top of described transparent area, and the channel region of described photosensitive TFT is just to described transparent area, and described source-drain electrode metal level comprises source electrode and drain electrode, and the source electrode of described photosensitive TFT is electrically connected with the drain electrode of described switching TFT;
On described passivation layer, form anode successively, pixel define layer, organic luminous layer and transparent cathode, described anode is electrically connected by the source electrode of via hole with described switching TFT.
10. method as claimed in claim 9, is characterized in that, be also included between described passivation layer and described anode and form planarization layer.
11. 1 kinds of ultraviolet light detection method, is characterized in that, comprising:
Make the source electrode of photosensitive TFT connect high level signal, the gate electrode of described photosensitive TFT connects the first control signal, and the gate electrode of switching TFT connects the second control signal;
In first time period, described first control signal is high level, and described second control signal is low level, described photosensitive TFT conducting, and described switching TFT turns off;
In the second time period, described first control signal is low level, described second control signal is high level, described photosensitive TFT turns off, described switching TFT conducting, described photosensitive TFT detects the ultraviolet light of transparent area incidence, if ultraviolet light detected, described photosensitive TFT conducting the high level signal received by self drain electrode are supplied to the anode of OLED pixel structure through described switching TFT, make the organic luminous layer of OLED pixel structure luminous;
3rd time period, described first control signal repeated first time period and the sequential of the second time period, and reset described photosensitive TFT, and described second control signal is low level, and described switching TFT is turned off to the end of scan.
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