CN108922904A - A kind of photosensory assembly and preparation method thereof, array substrate, display device - Google Patents
A kind of photosensory assembly and preparation method thereof, array substrate, display device Download PDFInfo
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- CN108922904A CN108922904A CN201810785189.8A CN201810785189A CN108922904A CN 108922904 A CN108922904 A CN 108922904A CN 201810785189 A CN201810785189 A CN 201810785189A CN 108922904 A CN108922904 A CN 108922904A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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Abstract
The embodiment of the present invention provides a kind of photosensory assembly and preparation method thereof, array substrate, display device, is related to field of display technology, can reduce the dark current of photodiode, improves the detection effect of photodiode.A kind of photosensory assembly, including：Switch unit, the switch unit include active layer；Photodiode, the photodiode includes the p type semiconductor layer and n type semiconductor layer being stacked, wherein, the n type semiconductor layer includes to extend to the extension other than the p type semiconductor layer boundary with the facing portion of the p type semiconductor layer face and from the facing portion, wherein, at least partly it is used as the active layer in the extension.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of photosensory assembly and preparation method thereof, array substrate, displays
Device.
Background technique
Fingerprint recognition, which refers to by comparing the details of different fingerprints, carries out identity identification, the realization of fingerprint recognition
Mode mainly has condenser type, optical profile type and three kinds of ultrasonic type.
Wherein, the principle of optical fingerprint identification is：After light shines finger, by the trough (hereinafter referred to as paddy) of finger
Reflect, and shone on light sensor layer with wave crest (hereinafter referred to as ridge), photodiode according to the luminous energy received not
With progress fingerprint recognition.
However, leading to the signal-to-noise ratio of photodiode due to having biggish dark current in the PN junction in light sensor layer
It is too small, to influence the contrast of the valley and a ridge of fingerprint, that is, influence photodiode to the recognition effect of fingerprint.
Summary of the invention
The embodiment of the present invention provides a kind of photosensory assembly and preparation method thereof, array substrate, display device, can reduce light
The dark current of electric diode improves the detection effect of photodiode.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that：
In a first aspect, a kind of photosensory assembly is provided, including：Switch unit, the switch unit include active layer；Photoelectricity two
Pole pipe, the photodiode include the p type semiconductor layer and n type semiconductor layer being stacked, wherein the N-type semiconductor
Layer is comprising extending to the p type semiconductor layer boundary with the facing portion of the p type semiconductor layer face and from the facing portion
Extension in addition, wherein be at least partly used as the active layer in the extension.
Preferably, the switch unit further includes：With the first pole of the active layer mutually insulated and with the active layer
The voltage difference of application is gone up extremely for changing the conductive energy of the active layer in second pole of contact, first pole and described second
Power, so that the switch unit is in ON state or OFF state；The photodiode further includes that be set to the p type semiconductor layer separate
The n type semiconductor layer side and the electrode layer contacted with the p type semiconductor layer；The electrode layer is used for the photoelectricity
The electric signal export that diode generates.
It is further preferred that further including the contact conductor being electrically connected with electrode layer, the contact conductor and second pole
Same layer, same to material.
It is further preferred that further including substrate；
First pole, the active layer and two pole are set gradually over the substrate；Alternatively, described second
Pole, the active layer and first pole are set gradually over the substrate.
It preferably, further include substrate, the n type semiconductor layer is set to the p type semiconductor layer close to or far from described
The side of substrate.
Preferably, the resistance of the material of the n type semiconductor layer is greater than the resistance of ZnO.
It is further preferred that the material of the n type semiconductor layer is indium gallium zinc.
Second aspect provides a kind of array substrate, including photosensory assembly described in first aspect.
The third aspect provides a kind of display device, including array substrate described in second aspect.
Fourth aspect provides a kind of preparation method of photosensory assembly, including：Form switch unit and photodiode；Its
In, the switch unit includes active layer；The photodiode includes the p type semiconductor layer and N-type semiconductor being stacked
Layer, wherein the n type semiconductor layer includes to extend with the facing portion of the p type semiconductor layer face and from the facing portion
Extension other than to the p type semiconductor layer boundary, wherein be at least partly used as the active layer in the extension.
The embodiment of the present invention provides a kind of photosensory assembly and preparation method thereof, array substrate, display device, including switch is single
Member and photodiode, photodiode include n type semiconductor layer, and n type semiconductor layer includes facing portion and extension, pass through by
Extension is used as the active layer of switch unit, on the one hand, can make the facing portion of photodiode and the active layer of switch unit
By being formed with a patterning processes, to reduce by one of mask plate, simplify preparation process；On the other hand, N-type can not changed
In the case where the cross-sectional area of semiconductor layer, increase the length of n type semiconductor layer, so, it is possible to increase n type semiconductor layer
Resistance, further, it is possible to increase the parallel resistance between n type semiconductor layer and p type semiconductor layer, to reduce photodiode
Dark current, the signal-to-noise ratio of photodiode is improved, to improve the detection effect of photodiode.
On this basis, when the photosensory assembly is identified for fingerprint (or other textured objects), due to light
The detection effect of electric diode improves, and therefore, the accuracy of fingerprint recognition can be improved, improves the comparison of the valley and a ridge of fingerprint
Degree.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of photosensory assembly provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram one of switch unit provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram two of switch unit provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram one of photodiode provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram two of photodiode provided in an embodiment of the present invention；
Fig. 6 is a kind of flow diagram one for preparing photosensory assembly provided in an embodiment of the present invention；
Fig. 7 is a kind of flow diagram two for preparing photosensory assembly provided in an embodiment of the present invention.
Appended drawing reference：
1- substrate；10- switch unit；11- active layer；The first pole 12-；The second pole 13-；20- photodiode；21-N type
Semiconductor layer；22-P type semiconductor layer；23- buffer layer；24- electrode layer；25- contact conductor.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of photosensory assembly, as shown in Figure 1, including：Switch unit 10, switch unit 10 include
Active layer 11；Photodiode 20, photodiode 20 include the p type semiconductor layer 22 and n type semiconductor layer 21 being stacked,
Wherein, n type semiconductor layer 21 includes to extend to p-type half with the facing portion of 22 face of p type semiconductor layer and from facing portion 211
Extension other than 22 boundary of conductor layer, wherein be at least partly used as active layer 11 in extension.
Herein, photodiode 20 is for that when illuminated, can convert optical signal into electric signal.Photodiode 20
Alternatively referred to as photodiode.
It should be noted that first, the size of the conductive capability of active layer 11 in the unit that opens the light determines switch unit 10
Switch state.Specifically, the conductive capability of active layer 11 is stronger, electric current is bigger, the ON state work as switch unit 10；Active layer
11 conductive capability is weaker, and electric current is smaller, the OFF state work as switch unit 10.
Second, the type of photodiode 20 is not defined, photodiode 20 can be PN type photodiode,
It is also possible to PIN type photodiode.
When photodiode 20 is PN type photodiode, photodiode 20 includes p type semiconductor layer 22 and N-type half
Conductor layer 21；When photodiode 20 is PIN type photodiode, photodiode 20 includes p type semiconductor layer 22, N-type
Intrinsic semiconductor layer between semiconductor layer 21 and p type semiconductor layer 22 and n type semiconductor layer 21.
Certainly, buffer layer 23 can be also set between p type semiconductor layer 22 and n type semiconductor layer 21, to play lattice
The effect matched.
Exemplary, the material of buffer layer 23 can be ZnS.
Third, the material of p type semiconductor layer 22 are P-type semiconductor, such as copper indium gallium selenide (CIGS)；N type semiconductor layer 21
Material be N-type semiconductor, such as ZnO or indium gallium zinc (indium gallium zinc oxide, abbreviation IGZO).
4th, the facing portion in n type semiconductor layer 21 with 22 face of p type semiconductor layer, can in photodiode 20
Other structures collective effect makes photodiode 20 have the function that optical signal is switched to electric signal.
The extension other than 22 boundary of p type semiconductor layer is extended to from facing portion in n type semiconductor layer 21, can all be used
Make active layer 11, can also partially be used as active layer 11, to this without limiting.
5th, the extension and facing portion same layer, same material of n type semiconductor layer 21, and by with a patterning processes shape
Integral pattern.
The embodiment of the present invention provides a kind of photosensory assembly, including switch unit 10 and photodiode 20, photodiode
20 include n type semiconductor layer 21, and n type semiconductor layer 21 includes facing portion 211 and extension, by the way that extension is used as switch list
The active layer 11 of member 10, on the one hand, the facing portion 211 of photodiode 20 and the active layer 11 of switch unit 10 can be made to pass through
It is formed with a patterning processes, to reduce by one of mask plate, simplifies preparation process；On the other hand, it can partly be led not changing N-type
In the case where the cross-sectional area of body layer 21, increase the length of n type semiconductor layer 21, so, it is possible to increase n type semiconductor layer 21
Resistance, further, it is possible to increase the parallel resistance between n type semiconductor layer 21 and p type semiconductor layer 22, to reduce photoelectricity
The dark current of diode 20 improves the signal-to-noise ratio of photodiode 20, to improve the detection effect of photodiode 20.
On this basis, when the photosensory assembly is identified for fingerprint (or other textured objects), due to light
The detection effect of electric diode 20 improves, and therefore, the accuracy of fingerprint recognition can be improved, improves the comparison of the valley and a ridge of fingerprint
Degree.
Preferably, switch unit 10 further includes：It is contacted with the first pole 12 of 11 mutually insulated of active layer and with active layer 11
The second pole 13, the voltage difference applied on the first pole 12 and the second pole 13 for changing active layer 11 conductive capability, so as to open
Closing unit 10 is in ON state or OFF state；Photodiode 20 further includes and is set to p type semiconductor layer 22 far from n type semiconductor layer 21
The electrode layer 24 that side and p type semiconductor layer 22 contact；Electrode layer 24 is for leading the electric signal that photodiode 20 generates
Out.
Wherein, in the case where switch unit 10 is in ON state, the electric signal that electrode layer 24 can generate photodiode 20,
The control module of photosensory assembly is exported to, control module can carry out fingerprint recognition according to the optical signal received.
It should be noted that first, the voltage difference between the conductive capability of active layer 11 and the first pole 12 and the second pole 13
It is related, when the voltage difference between the first pole 12 and the second pole 13 greatly to a certain extent, switch unit 10 can be made to be in ON state；Instead
It can make switch unit 10 be in OFF state when the voltage difference between the first pole 12 and the second pole 13 is small to a certain extent.
Second, negative electricity can be applied to electrode layer 24, so that photodiode 20 works under reverse bias.
Third, after the electric signal that photodiode 20 generates, i.e. photodiode 20 are by illumination, the electric current of generation should
Electric current is known as the photoelectric current of photodiode 20.
In the embodiment of the present invention, common photodiode 20 not only includes electrode layer 24, and also packet is set to N-type semiconductor
Layer 21 far from 22 side of p type semiconductor layer and the electrode opposite with electrode layer 24, for 24 collective effect of electrode layer, to lead
The electric signal of photodiode 20 out, and the embodiment of the present invention is by utilizing electrode layer 24 and for common with the first pole 12
Effect changes the second pole 13 of the conductive capability of active layer 11, exports the optical signal of photodiode 20, can be without partly leading in N-type
The electrode opposite with electrode layer 24 is arranged far from 22 side of p type semiconductor layer for body layer 21, simplifies the preparation process of photosensory assembly.
It is further preferred that photosensory assembly further includes the contact conductor 25 being electrically connected with electrode layer 24, contact conductor 25 with
Second pole, 13 same layer, same to material.Wherein it is possible to apply negative electricity to electrode layer 24 by contact conductor 25.
Herein, due to 13 same layer of contact conductor 25 and the second pole, same to material, contact conductor 25 can be with the second pole
13, by being formed with a patterning processes, so, can simplify the preparation process of photosensory assembly.
Preferably, as shown in Figures 2 and 3, photosensory assembly further includes substrate 1；As shown in Fig. 2, first pole 12, active
Layer 11 and the second pole 13 are successively set on substrate 1；Alternatively, as shown in figure 3, the second pole 13, active layer 11 and first
Pole 12 is successively set on substrate 1.
It should be noted that it will be appreciated by those skilled in the art that, due to the first pole 12 and 11 mutually insulated of active layer,
Therefore, even if the first pole 12, active layer 11 are successively set on substrate 1, alternatively, active layer 11, the first pole 12 are successively set on
On substrate 1, therebetween also between be separated with insulating layer.
Preferably, as shown in Figure 4 and Figure 5, photosensory assembly further includes substrate 1, and n type semiconductor layer 21 is set to p-type and partly leads
Side of the body layer 22 close to or far from substrate 1.
It should be noted that in the case where photodiode 20 includes electrode layer 24, as shown in Fig. 2, if N-type semiconductor
Layer 21 is set to p type semiconductor layer 22 close to the side of substrate 1, then electrode layer 24 is arranged in P-type semiconductor far from substrate 1 one
Side；As shown in figure 3, electrode layer 24 is arranged if n type semiconductor layer 21 is set to side of the p type semiconductor layer 22 far from substrate 1
In P-type semiconductor close to 1 side of substrate.
Preferably, the resistance of the material of n type semiconductor layer 21 is greater than the resistance of ZnO.
Herein, it will be appreciated by those skilled in the art that, since the extension of n type semiconductor layer 21 is at least partly used as out
The active layer 11 of unit 10 is closed, therefore, the resistance of the material of n type semiconductor layer 21 is not only required to be greater than the resistance of ZnO, N-type half
The material of conductor layer 21 also should apply to the active layer 11 of switch unit 10.
In the embodiment of the present invention, due in the prior art, generalling use material of the ZnO as n type semiconductor layer 21, still
The resistance of ZnO is smaller, causes the dark current of photodiode 20 bigger, therefore, can choose the material conduct that resistance is greater than ZnO
The material of n type semiconductor layer 21, so, it is possible to increase the electricity in parallel between n type semiconductor layer 21 and p type semiconductor layer 22
Resistance improves the signal-to-noise ratio of photodiode 20, to reduce the dark current of photodiode 20 to improve photodiode 20
Detection effect.
It is further preferred that the material of n type semiconductor layer 21 is IGZO.
In the embodiment of the present invention, since IGZO is that there are commonly 11 materials of active layer, and its resistance is greater than the resistance of ZnO, ZnO
Resistance value be usually 106~107The resistance value of Ω, IGZO are usually 107~109Therefore Ω can be used as having in the embodiment of the present invention
The material of active layer 11, to reduce the dark current of photodiode 20.
The embodiment of the present invention provides a kind of array substrate, including photosensory assembly described in aforementioned any embodiment.
In addition, the array substrate further includes substrate 1, and the thin film transistor (TFT), the pixel electrode that are arranged on substrate 1
Deng certainly, public electrode also can be set in array substrate.
The embodiment of the present invention provides a kind of array substrate, including the photosensory assembly, and the photosensory assembly includes that switch is single
Member 10 and photodiode 20, photodiode 20 include n type semiconductor layer 21, and n type semiconductor layer 21 includes 211 He of facing portion
Extension, by the active layer 11 that extension is used as to switch unit 10, on the one hand, the facing portion of photodiode 20 can be made
211 with the active layer 11 of switch unit 10 by being formed with a patterning processes, to reduce by one of mask plate, simplify preparation work
Skill；On the other hand, the length of n type semiconductor layer 21 can be increased in the case where not changing the cross-sectional area of n type semiconductor layer 21
Degree, so, it is possible to increase the resistance of n type semiconductor layer 21, further, it is possible to increase n type semiconductor layer 21 and P-type semiconductor
Parallel resistance between layer 22 improves the signal-to-noise ratio of photodiode 20, to reduce the dark current of photodiode 20 to mention
The detection effect of high photodiode 20.
On this basis, when the photosensory assembly is identified for fingerprint (or other textured objects), due to light
The detection effect of electric diode 20 improves, and therefore, the accuracy of fingerprint recognition can be improved, improves the comparison of the valley and a ridge of fingerprint
Degree.
The embodiment of the present invention provides a kind of display device, including array substrate described in previous embodiment.
Wherein, the display device can be display panel, be also possible to the display comprising display panel.For example, institute
Stating display panel can be Organic Light Emitting Diode (organic lightemitting diode, abbreviation OLED) display panel
Or liquid crystal display panel.
When display panel is OLED display panel, OLED display panel further includes to box substrate, is set to array substrate
With to the liquid crystal layer between box substrate.
When display panel is liquid crystal display panel, liquid crystal display panel further includes OLED luminescent device and encapsulated layer.
Wherein, OLED luminescent device includes anode, the light emitting functional layer of cathode and setting between the anode and cathode.
The embodiment of the present invention provides a kind of display device, has technical effect identical with aforementioned array substrate, herein not
It repeats again.
The present invention provides a kind of preparation method of photosensory assembly, including：Form switch unit 10 and photodiode 20；Its
In, switch unit 10 includes active layer 11；Photodiode 20 includes the p type semiconductor layer 22 and N-type semiconductor being stacked
Layer 21, wherein n type semiconductor layer 21 includes to extend to P with the facing portion 211 of 22 face of p type semiconductor layer and from facing portion
Extension other than 22 boundary of type semiconductor layer, wherein be at least partly used as the active layer 11 in extension.
In addition, switch unit 10 further includes contacted with the first pole 12 of 11 mutually insulated of active layer and with active layer 11
The voltage difference applied on two poles 13, the first pole 12 and the second pole 13 for changing active layer 11 conductive capability so that switch is single
Member 10 is in ON state or OFF state；Photodiode 20 further include be set to p type semiconductor layer 22 far from 21 side of n type semiconductor layer,
And the electrode layer 24 contacted with p type semiconductor layer 22；The electricity that second pole 13 and electrode layer 24 are used to generate on photodiode 20
Signal export.
Specifically, the method for forming switch unit 10 and photodiode 20 particularly may be divided into it is following several：
As shown in fig. 6, S11, sequentially forming on substrate 1 first pole 12 and covering the insulating layer of the first pole 12.
S12, n type semiconductor layer 21, p type semiconductor layer 22 and electrode are sequentially formed far from 1 side of substrate in insulating layer
Layer 24.
S13, the second pole 13 is formed far from 1 side of substrate in insulating layer.
Wherein, step S12 can be interchanged with step S13 sequence.But when photosensory assembly further include contact conductor 25 and
When contact conductor 25 and the second pole 13 are passed through with a patterning processes formation, step S13 is after step s 12.
Alternatively, as shown in fig. 7, S21, sequentially forming on substrate 1 first pole 12 and covering the insulation of the first pole 12
Layer.
S22, electrode layer 24, p type semiconductor layer 22 and N-type semiconductor are sequentially formed far from 1 side of substrate in insulating layer
Layer 21.
S23, the second pole 13 is formed far from 1 side of substrate in insulating layer.
Wherein, step S22 can be interchanged with step S23 sequence.But when photosensory assembly further include contact conductor 25 and
When contact conductor 25 and the second pole 13 are passed through with a patterning processes formation, step S13 is before step S12.
More than, it is to be located at the second pole 13 with the first pole 12 to illustrate close to 1 side of substrate, certainly, first electrode 12 can also
To be located at the second pole 13 far from 1 side of substrate, details are not described herein.
It should be noted that first, the size of the conductive capability of active layer 11 in the unit 10 that opens the light determines switch unit 10
Switch state.Specifically, the conductive capability of active layer 11 is stronger, electric current is bigger, the ON state work as switch unit 10；It is active
The conductive capability of layer 11 is weaker, and electric current is smaller, the OFF state work as switch unit 10.
Second, the type of photodiode 20 is not defined, photodiode 20 can be PN type photodiode,
It is also possible to PIN type photodiode.
When photodiode 20 is PN type photodiode, photodiode 20 includes p type semiconductor layer 22 and N-type half
Conductor layer 21；When photodiode 20 is PIN type photodiode, photodiode 20 includes p type semiconductor layer 22, N-type
Intrinsic semiconductor layer between semiconductor layer 21 and p type semiconductor layer 22 and n type semiconductor layer 21.
Certainly, buffer layer 23 can be also set between p type semiconductor layer 22 and n type semiconductor layer 21, to play lattice
The effect matched.
Exemplary, the material of buffer layer 23 can be ZnS.
Third, the material of p type semiconductor layer 22 are P-type semiconductor, such as CIGS；The material of n type semiconductor layer 21 is N-type
Semiconductor, such as ZnO or IGZO.
4th, the facing portion in n type semiconductor layer 21 with 22 face of p type semiconductor layer, can in photodiode 20
Other structures collective effect makes photodiode 20 have the function that optical signal is switched to electric signal.
The extension other than 22 boundary of p type semiconductor layer is extended to from facing portion in n type semiconductor layer 21, can all be used
Make active layer 11, can also partially be used as active layer 11, to this without limiting.
5th, the extension and facing portion same layer, same material of n type semiconductor layer 21, and by with a patterning processes shape
Integral pattern.
The embodiment of the present invention provides a kind of preparation method of photosensory assembly, has technology identical with aforementioned photosensory assembly effect
Fruit, details are not described herein.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of photosensory assembly, which is characterized in that including：
Switch unit, the switch unit include active layer；
Photodiode, the photodiode include the p type semiconductor layer and n type semiconductor layer being stacked, wherein described
N type semiconductor layer includes to extend to the p-type half with the facing portion of the p type semiconductor layer face and from the facing portion
Extension other than conductor layer boundary, wherein be at least partly used as the active layer in the extension.
2. photosensory assembly according to claim 1, which is characterized in that the switch unit further includes：With the active layer
First pole of mutually insulated and the second pole contacted with the active layer, first pole and the described second extremely upper voltage applied
Difference for changing the active layer conductive capability so that the switch unit be in ON state or OFF state；
The photodiode further include be set to the p type semiconductor layer far from the n type semiconductor layer side and with it is described
The electrode layer of p type semiconductor layer contact；The electric signal that the electrode layer is used to generate on the photodiode exports.
3. photosensory assembly according to claim 2, which is characterized in that it further include the contact conductor being electrically connected with electrode layer,
The contact conductor and second pole same layer, same to material.
4. photosensory assembly according to claim 2, which is characterized in that further include substrate；
First pole, the active layer and second pole are set gradually over the substrate；
Alternatively, second pole, the active layer and first pole are set gradually over the substrate.
5. photosensory assembly according to claim 1-4, which is characterized in that it further include substrate, the N-type semiconductor
Layer is set to the p type semiconductor layer close to or far from the side of the substrate.
6. photosensory assembly according to claim 1, which is characterized in that the resistance of the material of the n type semiconductor layer is greater than
The resistance of ZnO.
7. photosensory assembly according to claim 6, which is characterized in that the material of the n type semiconductor layer is indium gallium
Zinc.
8. a kind of array substrate, which is characterized in that including the described in any item photosensory assemblies of claim 1-7.
9. a kind of display device, which is characterized in that including array substrate according to any one of claims 8.
10. a kind of preparation method of photosensory assembly, which is characterized in that including：
Form switch unit and photodiode；
Wherein, the switch unit includes active layer；The photodiode includes the p type semiconductor layer being stacked and N-type
Semiconductor layer, wherein the n type semiconductor layer includes with the facing portion of the p type semiconductor layer face and from the face
Portion extends to the extension other than the p type semiconductor layer boundary, wherein at least partly having as described in the extension
Active layer.
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| CN109521586A (en) * | 2018-12-10 | 2019-03-26 | 厦门天马微电子有限公司 | Display panel and display device |
| CN110245649A (en) * | 2019-07-31 | 2019-09-17 | 上海天马微电子有限公司 | Display panel, driving method and display device |
| CN111180532A (en) * | 2020-01-06 | 2020-05-19 | 武汉华星光电技术有限公司 | Photodiode, manufacturing method thereof and display screen |
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| CN102723344A (en) * | 2012-06-12 | 2012-10-10 | 南京中电熊猫液晶显示科技有限公司 | Array substrate, manufacture method of array substrate and liquid crystal display |
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