CN111508987A - Sensor, manufacturing method thereof and photoelectric conversion device - Google Patents
Sensor, manufacturing method thereof and photoelectric conversion device Download PDFInfo
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- CN111508987A CN111508987A CN202010355342.0A CN202010355342A CN111508987A CN 111508987 A CN111508987 A CN 111508987A CN 202010355342 A CN202010355342 A CN 202010355342A CN 111508987 A CN111508987 A CN 111508987A
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- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
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Abstract
The invention provides a sensor, a method for manufacturing the same, and a photoelectric conversion device, wherein the sensor comprises: a substrate base plate; the first grid and the second grid are arranged on the substrate base plate; the first insulating layer is arranged on the first grid, the second grid and the substrate base plate; a first active layer and a second active layer both disposed on the first insulating layer; the first source electrode and the first drain electrode are arranged on part of the first active layer; the second source electrode and the second drain electrode are arranged on part of the second active layer; wherein the second source electrode is connected with the first drain electrode, and a light blocking layer is arranged on the first source electrode and the first drain electrode and covers the first active layer; and the scintillator layer is arranged on the light blocking layer, the second source electrode and the second drain electrode. The sensor, the manufacturing method thereof and the photoelectric conversion device can reduce the size of the sensor.
Description
[ technical field ] A method for producing a semiconductor device
The present invention relates to the field of display technologies, and in particular, to a sensor, a method for manufacturing the sensor, and a photoelectric conversion device.
[ background of the invention ]
Active pixel sensors have received much attention because of their higher signal-to-noise ratio compared to passive pixel sensors. Conventional active pixel sensors are generally classified into two types, a direct type and an indirect type, wherein the indirect type active pixel sensor has the advantages of low working voltage, high scanning speed, low radiation dose and low quantum noise.
As shown in fig. 1, a typical indirect active pixel sensor is composed of a thin film transistor 11(TFT), a photodiode 12 and a scintillator layer 13, wherein the scintillator layer 13 first absorbs X-rays to generate visible light, the photodiode 12 converts optical signals into electrical signals (the propagation direction of light is shown by arrows in fig. 1), and then the thin film transistor 11 performs line-by-line scanning of images.
Such a structure generally requires p-type material and n-type material to form a p-i-n junction photodiode, and in order to obtain a large photocurrent, the photodiode needs a large light receiving area, that is, the area of the photodiode is large, thereby increasing the size of the sensor.
[ summary of the invention ]
The invention provides a sensor, a method for manufacturing the same, and a photoelectric conversion device, which can reduce the size of the sensor.
To solve the above technical problem, the present invention provides a sensor, including:
a substrate base plate;
the first grid and the second grid are arranged on the substrate base plate;
the first insulating layer is arranged on the first grid electrode, the second grid electrode and the substrate base plate;
a first active layer and a second active layer both disposed on the first insulating layer; the position of the first active layer corresponds to the position of the first grid electrode; the position of the second active layer corresponds to the position of the second grid electrode;
the first source electrode and the first drain electrode are arranged on part of the first active layer;
the second source electrode and the second drain electrode are arranged on part of the second active layer; wherein the second source is connected to the first drain;
the light blocking layer is arranged on the first source electrode and the first drain electrode, and covers the first active layer;
and the scintillator layer is arranged on the light blocking layer, the second source electrode and the second drain electrode.
The invention also provides a photoelectric conversion device comprising the sensor.
The invention also provides a manufacturing method of the sensor, which comprises the following steps:
respectively manufacturing a first grid and a second grid on a substrate;
manufacturing a first insulating layer on the first grid and the second grid;
manufacturing a first active layer on the first insulating layer corresponding to the first grid electrode and manufacturing a second active layer on the first insulating layer corresponding to the second grid electrode;
respectively manufacturing a first source electrode and a first drain electrode on the first active layer, and respectively manufacturing a second source electrode and a second drain electrode on the second active layer, wherein the second source electrode is connected with the first drain electrode;
fabricating a light blocking layer on the first source electrode and the first drain electrode, the light blocking layer covering the first active layer;
fabricating a scintillator layer on the light blocking layer, the second source electrode, and the second drain electrode.
The sensor, the manufacturing method thereof and the photoelectric conversion device of the invention comprise a substrate base plate; the first grid and the second grid are arranged on the substrate base plate; the first insulating layer is arranged on the first grid electrode, the second grid electrode and the substrate base plate; a first active layer and a second active layer both disposed on the first insulating layer; the first source electrode and the first drain electrode are arranged on part of the first active layer; the second source electrode and the second drain electrode are arranged on part of the second active layer; wherein the second source is connected to the first drain; the light blocking layer is arranged on the first source electrode and the first drain electrode, and covers the first active layer; a scintillator layer disposed on the light blocking layer, the second source electrode, and the second drain electrode; because the photoelectric thin film transistor is adopted to replace the photodiode and has higher quantum efficiency, a larger light receiving area is not needed, and the size of the sensor is reduced.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a conventional sensor;
FIG. 2 is a schematic structural diagram of a sensor according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a sensor according to another embodiment of the present invention.
[ detailed description ] embodiments
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc. refer to directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
Referring to fig. 2 and 3, fig. 2 is a schematic structural diagram of a sensor according to an embodiment of the present invention.
The sensor of the present embodiment is an X-ray imaging sensor or an X-ray detector, and as shown in fig. 2, in one embodiment, the sensor of the present invention includes a substrate 20, a first gate electrode 211, a second gate electrode 212, a first insulating layer 22, a first active layer 231, a second active layer 232, a first source electrode 241, a first drain electrode 242, a second source electrode 243, a second drain electrode 244, a light blocking layer 26, and a scintillator layer 27.
The material of the base substrate 20 includes at least one of glass, polyethylene naphthalate, polyethylene terephthalate (PET), and Polyimide (PI).
The first gate 211 and the second gate 212 are both disposed on the substrate base plate 20. The material of the second gate electrode 212 may include at least one of a transparent conductive material and a metal material. The materials of the first gate 211 and the second gate 212 may be the same. In order to simplify the process and reduce the production cost, the first gate 211 and the second gate 212 are disposed on the same layer and have the same material.
The first insulating layer 22 is disposed on the first gate 211, the second gate 212, and the substrate 20.
A first active layer 231 and a second active layer 232 are both disposed on the first insulating layer 22; the position of the first active layer 231 corresponds to the position of the first gate electrode 211; the position of the second active layer 232 corresponds to the position of the second gate electrode 212. In an embodiment, in order to further improve the quantum efficiency of the second thin film transistor, the thickness h2 of the second active layer 232 is greater than or equal to the thickness h1 of the first active layer 231. In one embodiment, to simplify the process and reduce the production cost, the first active layer 231 and the second active layer 232 are disposed on the same layer and have the same material; the material of the first active layer 231 includes at least one of metal oxide, amorphous silicon, and polysilicon. The material of the second active layer 232 may include at least one of metal oxide, amorphous silicon, and polysilicon. Of course, the materials of the first and second active layers 231 and 232 may be other materials.
A first source electrode 241 and a first drain electrode 242 are disposed on a portion of the first active layer 231; the thickness of the first source electrode 241 is equal to or approximately equal to the thickness of the first drain electrode 242. That is, the first source electrode 241 and the first drain electrode 242 are respectively connected to one of the two ends of the first active layer 231. The first source electrode 241 and the first drain electrode 242 are made of the same material. The material of the first source electrode 241 includes at least one of a metal material and a transparent conductive material. Wherein the first gate electrode 211, the first active layer 231, and the first source and drain electrodes 241 and 242 constitute the first thin film transistor.
The second source electrode 243 and the second drain electrode 244 are both disposed on a portion of the second active layer 232; wherein the second source 243 is connected with the first drain 242. That is, the first source electrode 241 and the first drain electrode 242 are respectively connected to one of the two ends of the first active layer 231. The second gate electrode 212, the second active layer 232, and the second source electrode 243 and the second drain electrode 244 constitute the second thin film transistor, which is a photoelectric thin film transistor, and electrons in the second active layer are excited by light to generate an electrical signal. In an embodiment, in order to further improve the quantum efficiency of the second thin film transistor, the material of the second source electrode 243 may be a transparent conductive material, so that the photosensitive area of the active layer may be increased. Of course, in other embodiments, the material of the second source electrode 243 may also be a metal material. The second source electrode 243 is made of the same material as the second drain electrode 244.
The light blocking layer 26 may be disposed on the first source electrode 241 and the first drain electrode 242. The light blocking layer 26 covers the first active layer 231. In order to improve the stability of the first thin film transistor, an area of an orthographic projection of the light blocking layer 26 on the base substrate 20 is larger than an area of an orthographic projection of the first active layer 231 on the base substrate 20. Wherein, in order to improve the light shielding effect, the material of the light blocking layer 26 may include at least one of a metal material and a black photoresist.
In one embodiment, in order to improve the lifespan of the first thin film transistor and the second thin film transistor, the sensor may further include: a protective layer 25 provided on the first source electrode 241, the first drain electrode 242, the second source electrode 243, and the second drain electrode 244, and below the scintillator layer 27; in one embodiment, the light blocking layer 26 may be disposed on the protective layer 25. Of course, in other embodiments, in combination with fig. 3, the light blocking layer 26 may also be disposed between the protection layer 25 and the first source electrode 241 and the first drain electrode 242. I.e. the protective layer 25 is provided on the light blocking layer 26. The material of the protective layer 25 is preferably a transparent insulating material.
A scintillator layer 27 is provided on the light blocking layer 26. The scintillator layer 27 may absorb X-rays to produce visible light. The scintillator layer 27 first absorbs X-rays to generate visible light, and then the optical signal is converted into an electric signal by the second thin film transistor, and line-by-line scanning of an image is realized by the first thin film transistor.
Because the traditional photodiode is replaced by the photoelectric thin film transistor, the photoelectric thin film transistor has higher quantum efficiency, and does not need larger light receiving area, thereby reducing the size of the sensor; and the sensor has low emissivity; the use of p-type materials is reduced, and in addition, the first thin film transistor and the photoelectric thin film transistor share a plurality of yellow light processes, so that the cost is reduced, and the productivity can be improved.
The present invention also provides a method of making a sensor, which in one embodiment comprises:
s101, respectively manufacturing a first grid 211 and a second grid 212 on a substrate;
returning to fig. 2, in order to simplify the manufacturing process, in one embodiment, a first metal layer 21 is formed on a substrate 20, and the first metal layer 21 is patterned to form a first gate 211 and a second gate 212; the material of the first metal layer 21 includes at least one of a transparent conductive material and a metal material, such as at least one of Mo, Cu, Al, Ti. Such as Indium Tin Oxide (ITO), Mo/Cu, Mo/Al, Mo/Ti/Cu, Mo/Ti/Al, or a stack of metal layers. The first gate electrode 211 and the second gate electrode 212 may be manufactured by a sputtering or evaporation process.
Of course, the first gate and the second gate are not limited to be fabricated at the same layer. The patterning process may include exposing, developing, and etching.
S102, manufacturing a first insulating layer 22 on the first grid 211 and the second grid 212;
the material of the first insulating layer 22 may include, but is not limited to, aluminum oxide, silicon nitride, silicon dioxide, and aluminum nitride.
S103, fabricating a first active layer 231 on the first insulating layer 22 corresponding to the first gate electrode 211 and fabricating a second active layer 232 on the first insulating layer 22 corresponding to the second gate electrode 212;
the material of the second active layer 232 is a metal oxide.
In order to simplify the process, in one embodiment, the semiconductor layer 23 is formed on the first insulating layer 22, and the semiconductor layer 23 is patterned to form the first active layer 231 and the second active layer 232;
the first and second active layers 231 and 232 may be manufactured by a sputtering or chemical vapor deposition process.
S104, manufacturing a first source electrode and a first drain electrode on the first active layer; and fabricating a second source electrode and a second drain electrode on the second active layer.
Wherein the second source 243 is connected with the first drain 242.
In one embodiment, to simplify the process, a second metal layer 24 may be formed on the first active layer 231 and the second active layer 232, and the second metal layer 24 is patterned to form a first source electrode 241, a first drain electrode 242, a second source electrode 243, and a second drain electrode 244. The material of the second metal layer 24 includes at least one of transparent conductive material, Mo, Cu, Al, and Ti. The first source electrode 241, the first drain electrode 242, the second source electrode 243, and the second drain electrode 244 may be formed by a sputtering or evaporation process.
S105, fabricating a light blocking layer 26 on the first source electrode 241 and the first drain electrode 242, the light blocking layer 26 covering the first active layer 231;
s106, fabricating a scintillator layer 27 over the light blocking layer 26, the second source 243, and the second drain 244.
The step S105 may further include:
s201, fabricating a protection layer 25 on the first source 241, the first drain 242, the second source 243 and the second drain 244;
the material of the protective layer 25 includes at least one of aluminum oxide, silicon nitride, silicon dioxide, and aluminum nitride. The protective layer 25 may be formed by one of sputtering, chemical vapor deposition, atomic layer deposition, and plasma-enhanced atomic layer deposition.
S202, manufacturing a light blocking layer on the protective layer;
for example, a light blocking layer 26 is fabricated on the protective layer 25, wherein the light blocking layer 26 covers at least the first active layer 231. The range of materials for the light blocking layer 26 is not limited to metal and black photoresist.
The step S106 may be replaced by:
s203, fabricating a scintillator layer 27 on the light blocking layer 26 and the protective layer 25.
For example, a scintillator layer 27 may be grown over the light blocking layer 26 and the protective layer 25. Alternatively, a previously prepared scintillator layer 27 may be attached to the light blocking layer 26 and the protective layer 25.
In another embodiment, with reference to fig. 3, the step S106 may include:
s301, fabricating a protection layer 25 on the light blocking layer 26, the second source 243 and the second drain 244;
s302, a scintillator layer 27 is formed on the protective layer 25. The specific manufacturing process is the same as the previous embodiment.
The invention also provides a photoelectric conversion device comprising any one of the sensors. In addition, a driving circuit for driving the sensor may be further included, and since the photoelectric conversion apparatus employs a sensor having a small size, the resolution of the photoelectric conversion apparatus can be improved.
The sensor, the manufacturing method thereof and the photoelectric conversion device of the invention comprise a substrate base plate; the first grid and the second grid are arranged on the substrate base plate; the first insulating layer is arranged on the first grid electrode, the second grid electrode and the substrate base plate; a first active layer and a second active layer both disposed on the first insulating layer; the first source electrode and the first drain electrode are arranged on part of the first active layer; the second source electrode and the second drain electrode are arranged on part of the second active layer; wherein the second source is connected to the first drain; the light blocking layer is arranged on the first source electrode and the first drain electrode, and covers the first active layer; a scintillator layer disposed on the light blocking layer, the second source electrode, and the second drain electrode; because the photoelectric thin film transistor is adopted to replace the photodiode and has higher quantum efficiency, a larger light receiving area is not needed, and the size of the sensor is reduced.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (10)
1. A sensor, comprising:
a substrate base plate;
the first grid and the second grid are arranged on the substrate base plate;
the first insulating layer is arranged on the first grid electrode, the second grid electrode and the substrate base plate;
a first active layer and a second active layer both disposed on the first insulating layer; the position of the first active layer corresponds to the position of the first grid electrode; the position of the second active layer corresponds to the position of the second grid electrode;
the first source electrode and the first drain electrode are arranged on part of the first active layer;
the second source electrode and the second drain electrode are arranged on part of the second active layer; wherein the second source is connected to the first drain;
the light blocking layer is arranged on the first source electrode and the first drain electrode, and covers the first active layer;
and the scintillator layer is arranged on the light blocking layer, the second source electrode and the second drain electrode.
2. The sensor of claim 1,
the second active layer has a thickness greater than a thickness of the first active layer.
3. The sensor of claim 1,
the first active layer and the second active layer are arranged on the same layer and are made of the same material.
4. The sensor of claim 1,
an area of an orthographic projection of the light blocking layer on the substrate base plate is larger than an area of an orthographic projection of the first active layer on the substrate base plate.
5. The sensor of claim 1,
and the material of the second source electrode and the material of the second drain electrode are both transparent conductive materials.
6. The sensor of claim 1,
the first source electrode, the first drain electrode, the second source electrode and the second drain electrode are all arranged in the same layer and are made of the same material.
7. The sensor of claim 1,
the first grid and the second grid are arranged on the same layer and are made of the same material.
8. The sensor of claim 1,
the sensor further comprises: and the protective layer is arranged on the first source electrode, the first drain electrode, the second source electrode and the second drain electrode, and is arranged below the scintillator layer.
9. A photoelectric conversion apparatus comprising the sensor according to any one of claims 1 to 8.
10. A method of making a sensor, comprising:
respectively manufacturing a first grid and a second grid on a substrate;
manufacturing a first insulating layer on the first grid and the second grid;
manufacturing a first active layer on the first insulating layer corresponding to the first grid electrode and manufacturing a second active layer on the first insulating layer corresponding to the second grid electrode;
respectively manufacturing a first source electrode and a first drain electrode on the first active layer, and respectively manufacturing a second source electrode and a second drain electrode on the second active layer, wherein the second source electrode is connected with the first drain electrode;
fabricating a light blocking layer on the first source electrode and the first drain electrode, the light blocking layer covering the first active layer;
fabricating a scintillator layer on the light blocking layer, the second source electrode, and the second drain electrode.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112786636A (en) * | 2021-01-06 | 2021-05-11 | Tcl华星光电技术有限公司 | Preparation method of X-ray sensor and X-ray sensor |
| WO2022120949A1 (en) * | 2020-12-07 | 2022-06-16 | Tcl华星光电技术有限公司 | Light sensor and display device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100140622A1 (en) * | 2008-12-08 | 2010-06-10 | Younghak Lee | Thin film transistor, fabricating method of thin film transistor and display device using the same |
| US20110204371A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN102696109A (en) * | 2010-01-15 | 2012-09-26 | 株式会社半导体能源研究所 | Semiconductor device and method for driving the same |
| CN102792678A (en) * | 2010-03-08 | 2012-11-21 | 株式会社半导体能源研究所 | Semiconductor device and driving method thereof |
| CN104393024A (en) * | 2014-12-03 | 2015-03-04 | 京东方科技集团股份有限公司 | OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof |
| WO2019181558A1 (en) * | 2018-03-20 | 2019-09-26 | 株式会社ジャパンディスプレイ | Light sensor circuit, light sensor device, and display device |
| CN110729309A (en) * | 2019-09-27 | 2020-01-24 | 武汉华星光电技术有限公司 | Display panel, preparation method thereof and display device |
-
2020
- 2020-04-29 CN CN202010355342.0A patent/CN111508987A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100140622A1 (en) * | 2008-12-08 | 2010-06-10 | Younghak Lee | Thin film transistor, fabricating method of thin film transistor and display device using the same |
| CN102696109A (en) * | 2010-01-15 | 2012-09-26 | 株式会社半导体能源研究所 | Semiconductor device and method for driving the same |
| US20110204371A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN102792678A (en) * | 2010-03-08 | 2012-11-21 | 株式会社半导体能源研究所 | Semiconductor device and driving method thereof |
| CN104393024A (en) * | 2014-12-03 | 2015-03-04 | 京东方科技集团股份有限公司 | OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof |
| WO2019181558A1 (en) * | 2018-03-20 | 2019-09-26 | 株式会社ジャパンディスプレイ | Light sensor circuit, light sensor device, and display device |
| CN110729309A (en) * | 2019-09-27 | 2020-01-24 | 武汉华星光电技术有限公司 | Display panel, preparation method thereof and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022120949A1 (en) * | 2020-12-07 | 2022-06-16 | Tcl华星光电技术有限公司 | Light sensor and display device |
| CN112786636A (en) * | 2021-01-06 | 2021-05-11 | Tcl华星光电技术有限公司 | Preparation method of X-ray sensor and X-ray sensor |
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