CN101252112B - Semiconductor device and wire bonding method - Google Patents

Semiconductor device and wire bonding method Download PDF

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Publication number
CN101252112B
CN101252112B CN2008100055899A CN200810005589A CN101252112B CN 101252112 B CN101252112 B CN 101252112B CN 2008100055899 A CN2008100055899 A CN 2008100055899A CN 200810005589 A CN200810005589 A CN 200810005589A CN 101252112 B CN101252112 B CN 101252112B
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Prior art keywords
wire
lead
protuberance
junction point
warpage
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CN101252112A (en
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三井竜成
富山俊彦
吉野浩章
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Shinkawa Ltd
Arakawa Co Ltd
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Arakawa Co Ltd
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  • Wire Bonding (AREA)

Abstract

The invention relates to a semiconductor device and a wire bonding method. In the semiconductor device, a wire is stacked on a pad (3) as a second bonding point to form a bump (21) having a sloped wedge (22) and a first bent wire convex portion (21), and a wire (12) is looped from a lead as a first bonding point to the bump (21) and is pressed to the sloped wedge (22) of the bump (21) with a face portion (33) of a tip end of a capillary to bond the wire to the bump (21). At the same time, the wire (12) is pressed to the first bent wire convex portion (25) using an inner chamfer (31) of a bonding wire hole in the capillary to form a wire bent portion (20) having a bow-shaped cross section. The wire (12) is pulled up and cut at the wire bent portion (20). In the semiconductor device, improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality are provided.

Description

Semiconductor device and lead connecting method
Technical field
The present invention relates to the structure and wire-bonded (wire bonding) method of semiconductor device.
Background technology
Useful lead-in wire connects the wire-bonded operation between semiconductor chip and the leadframe in the assembling procedure of semiconductor devices such as IC.The following method of the general use of wire-bonded operation: lead-in wire runs through capillary, use this capillary, discharge by welding gun electrode, forming ball, make capillary be positioned on the pad of semiconductor chip (pad), after once welding from the outstanding lead-in wire front end of capillary, make capillary move on the pin of leadframe, carry out secondary welding, connect between semiconductor chip and the leadframe (for example, with reference to patent documentation 1) by lead-in wire.
This occasion is used gold wire mostly.Zygosity is good between gold and the same material gold, but and copper, nickel, zygosity is poor between the materials such as flash plating gold, if pad or pin material are copper for example, and nickel, the material of flash plating gold etc. and gold wire zygosity difference then can not directly weld gold wire on pad or pin.Therefore, use following method: on pad or pin, use gold wire, form protuberance (bump), on this protuberance, weld gold wire by ball bonding.
According to this method, form protuberance by identical gold copper-base alloy, gold wire is bonded on this protuberance, the gold wire zygosity improves, can improve by and the pad that forms of the material of golden zygosity difference or the zygosity between the pin.But, when gold wire welding not being tilted fully on protuberance and the occasion on plane, following problem can take place: because of the bonding area deficiency can cause engaging bad, perhaps engage protuberance and gold wire after, gold wire is out of shape down, and comes in contact between leadframe or the semiconductor chip.
So, at patent documentation 1, in the prior art of 2 records, following method is proposed: the gold wire welding is tilted and the plane fully in order on protuberance, to form, after ball bonding, the pushing capillary forms ramped wedges (wedge) on protuberance, gold wire is welded on the ramped wedges on this protuberance.
This method is for example shown in Figure 15 (a), on the pad 3 of semiconductor chip 2, form protuberance 21, it is made of first section protuberance 21a and second section protuberance 21b, make that the direction on inclined plane of ramped wedges 22 is the opposition side of pin 4, at lead-in wire 12 front ends, by formation balls 5 such as electric sparks.Then, shown in Figure 15 (b), ball 5 is pressed against on the pin 4, once weld, form pressure welding ball 6, shown in Figure 15 (c), make capillary 16 3 move, make lead-in wire 12 to be pressed against on the ramped wedges 22 of protuberance 21 lead-in wire 12 loopings from pin 4 towards pad, after carrying out secondary welding, cut off lead-in wire 12.In addition, can be for example shown in Figure 16, on pin 4, form protuberance 21, its direction with inclined plane is and semiconductor chip 2 rightabout ramped wedges 22, on the pad 3 of semiconductor chip 2, once weld, behind the formation pressure welding ball 6, make lead-in wire 12 towards pin 4 loopings, on the ramped wedges 22 of protuberance 21, carry out secondary welding.If according to this method, lead-in wire 12 engages along the ramped wedges 22 of protuberance 21, and therefore, the bonding area of ramped wedges 22 is big, improves bond strength, simultaneously, by ramped wedges 22 supporting lead-in wires 12, therefore, can prevent to go between 12 with the contacting of semiconductor chip or leadframe 15.
On the other hand, in the lead-in wire of wire-bonded operation cuts off, the problem that exists the lead-in wire front end to bend.Therefore, lead-in wire takes place to connect and bends to S word shape in welding back, bad problem such as contact between the adjacent connection lead-in wire.For these problems, for example following cutting-off method was proposed: before promoting the lead-in wire cut-out, make the position of capillary and binding clasp (clamper) laterally move, directly over formed thin lead-in wire crushing portion (pressure collapse portion) risen to, (for example cut off, with reference to patent documentation 3), perhaps binding clasp can be opened, after making that tail end lead-in wire (tail wire) is derived, make capillary vibrate, make the tail end lead-in wire resonate, cut off going between in the thin lead-in wire crushing portion that forms with the eigentone of tail end lead-in wire, lead-in wire crooked (for example, with reference to patent documentation 4) when preventing to cut off lead-in wire.
No. 3570551 specification of [patent documentation 1] Japan Patent
[patent documentation 2] TOHKEMY 2004-247672 communique
No. 2723277 specification of [patent documentation 3] Japan Patent
No. 2969953 specification of [patent documentation 4] Japan Patent
But, as shown in figure 17, on 12 ramped wedges 22 that are bonded on the protuberance 21 that will go between, if the lead-in wire 12 and the bonding area of protuberance 21 are big, then go between sometimes 12 and protuberance 21 between the cross sectional shape of lead-in wire crushing portion 20 not little.This occasion, in the background technology of patent documentation 3 records, grip lead-in wire 12 at binding clasp 17, drawing promotes lead-in wire 12 o'clock, 12 applies hightension to going between, simultaneously, after becoming extended state, cut off lead-in wire 12, counter-force during because of cut-out in thick lead-in wire crushing portion 20, the lead-in wire 12 of extended state takeoffs up, bends to S word shape.The bending of lead-in wire 12 is after this to pad 3 welding the time, existence causes that because of discharge waits ball forms bad problem, perhaps residual bending lead welds between capillary 16 inside and capillary 16 and the binding clasp 17, therefore, as shown in figure 18, exist to connect lead-in wire 12 and bend to S word shape, cause between the adjacent connection lead-in wire 12 bad problems such as contact.
In the background technology of patent documentation 4 records, in order to cut off thick lead-in wire crushing portion 20, need apply ultrasonic vibration for a long time, and that utilizes lead-in wire 12 extends to the resonance of the tail end lead-in wire 18 between the junction point from capillary 16, therefore, can not be suitable for short tail end lead-in wire, existing can not corresponding problem to the short high-speed welding device of tail end lead-in wire.
Like this, when using metal material to form the pad 3 of semiconductor chip 2 or the pin 4 of leadframe 15 with the wire-bonded difference, connect occasion between described pad 3 or the pin 4 with lead-in wire 12, in order to improve zygosity, form the protuberance 21 of zygosity excellent in shape, its be bonded on protuberance 21 after the cuttability of lead-in wire 12 opposite, in background technology, exist if improve zygosity then go between 12 cuttability variation, lead-in wire 12 buckling problems take place.
Summary of the invention
The present invention puts forward for solving the existing problem of above-mentioned prior art, the objective of the invention is to, and improves the zygosity between lead-in wire and the protuberance, simultaneously, improves the lead-in wire cuttability, improves welding quality.
In order to achieve the above object, the present invention proposes following technical scheme.
(1) a kind of semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, and the opposition side at first junction point comprises lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises the little section of sectional area ratio lead-in wire sectional area at lead-in wire warpage projection.
(2) a kind of semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, and the opposition side at the first junction point side and first junction point comprises lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises the little section of sectional area ratio lead-in wire sectional area at the lead-in wire warpage projection of the opposition side at first junction point.
(3) in above-mentioned (1) or (2) described semiconductor device, it is characterized in that:
Above-mentioned protuberance is the lead-in wire warpage to be stacked on second junction point form, and is provided with the ramped wedges that comprises the inclined plane in the above;
Lead-in wire along ramped wedges with engage above the protuberance.
(4) in above-mentioned (2) described semiconductor device, it is characterized in that:
Above-mentioned protuberance is the lead-in wire warpage to be stacked on second junction point form, and is provided with the ramped wedges that comprises the inclined plane, along the direction height step-down crustal inclination towards second junction point from first junction point;
Lead-in wire along ramped wedges with engage above the protuberance.
(5) in any described semiconductor device of above-mentioned (1)-(4), it is characterized in that:
Above-mentioned section is the bow-shaped cross-section shape.
(6) a kind of semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, and the opposition side at first junction point comprises lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises at lead-in wire warpage projection and shears section and the little stretching section of sectional area ratio lead-in wire sectional area.
(7) a kind of semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, at first junction point and the opposition side at first junction point comprise lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises at the lead-in wire warpage projection of the opposition side at first junction point and shears section and the little stretching section of sectional area ratio lead-in wire sectional area.
(8) in above-mentioned (6) or (7) described semiconductor device, it is characterized in that:
Above-mentioned protuberance comprises ramped wedges, this ramped wedges contain be positioned at above the first junction point side, along from first junction point towards the inclined plane of the second junction point direction height step-down;
Lead-in wire along ramped wedges with engage above the protuberance.
(9) in above-mentioned (7) described semiconductor device, it is characterized in that:
Above-mentioned protuberance comprises ramped wedges, the lead-in wire warpage protuberance adjacency of this ramped wedges and the first junction point side, this ramped wedges contain be located at above it, along from first junction point towards the inclined plane of the second junction point direction height step-down;
Lead-in wire along ramped wedges with engage above the protuberance.
(10) in any described semiconductor device of above-mentioned (6)-(9), it is characterized in that:
Above-mentioned shearing section and the face almost parallel that comprises the semiconductor device at second junction point, the stretching section is the bow-shaped cross-section shape.
(11) a kind of lead connecting method connects with lead-in wire between first junction point and second junction point of semiconductor device, it is characterized in that, comprises following operation:
Protuberance forms operation, and the warpage that will go between is stacked on second junction point, and the opposition side at first junction point forms the protuberance that comprises lead-in wire warpage protuberance;
Engage operation, the feasible lead-in wire looping from first junction point towards protuberance, make interior chamfer site capillaceous in lead-in wire warpage protuberance top, planar portions by the capillary front end will go between and push above protuberance, bonding wire, simultaneously, will go between towards the extruding of lead-in wire warpage protuberance, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area by interior chamfered section;
Cut off operation, promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing.
(12) in above-mentioned (11) described lead connecting method, it is characterized in that:
Above-mentioned protuberance forms operation and comprises ramped wedges formation operation, and it is that the lead-in wire warpage is stacked on second junction point that this ramped wedges forms operation, by the planar portions swaged lead of capillary front end, forms ramped wedges;
Described joint operation is that lead-in wire is engaged towards the ramped wedges extruding.
(13) in above-mentioned (11) or (12) described lead connecting method, it is characterized in that:
Above-mentioned lead-in wire crushing portion is the bow-shaped cross-section shape.
(14) a kind of lead connecting method connects with lead-in wire between first junction point and second junction point of semiconductor device, it is characterized in that, comprises following operation:
Protuberance forms operation, and the warpage that will go between is stacked on second junction point, and the opposition side at first junction point forms the protuberance that comprises lead-in wire warpage protuberance;
Engage operation, make the lead-in wire looping from first junction point towards protuberance, the planar portions by the capillary front end will go between and push bonding wire above protuberance;
Lead-in wire crushing portion forms operation, after making that capillary rises to highly low position, front end aspect ratio lead-in wire warpage protuberance upper end above protuberance, make capillary along moving from first junction point to lead-in wire warpage protuberance direction, it is local to shear the cut-out lead-in wire by bight capillaceous, simultaneously, to go between towards the extruding of lead-in wire warpage protuberance by chamfered section in capillaceous, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area;
Cut off operation, promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing.
(15) a kind of lead connecting method connects with lead-in wire between first junction point and second junction point of semiconductor device, it is characterized in that, comprises following operation:
Protuberance forms operation, and it comprises: the warpage that will go between is stacked on second junction point, and the opposition side at first junction point forms lead-in wire warpage protuberance; By the planar portions swaged lead of capillary front end, formation ramped wedges on the first junction point side; After making that capillary rises to highly low position, front end aspect ratio lead-in wire warpage protuberance upper end above ramped wedges, make capillary along moving to lead-in wire warpage protuberance direction from ramped wedges, it is local to shear the cut-out lead-in wire by bight capillaceous, simultaneously, to go between towards the extruding of lead-in wire warpage protuberance by chamfered section in capillaceous, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area; Promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing;
Engage operation, make the lead-in wire looping from first junction point towards protuberance, the planar portions by the capillary front end will go between and push bonding wire above ramped wedges;
Lead-in wire crushing portion forms operation, after making that capillary rises to highly low position, front end aspect ratio lead-in wire warpage protuberance upper end above ramped wedges, make capillary along moving to lead-in wire warpage protuberance direction from ramped wedges, it is local to shear the cut-out lead-in wire by bight capillaceous, simultaneously, to go between towards the extruding of lead-in wire warpage protuberance by chamfered section in capillaceous, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area;
Cut off operation, promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing.
(16) in above-mentioned (14) or (15) described lead connecting method, it is characterized in that:
Shear face that cuts off and the face almost parallel that comprises the semiconductor device at second junction point, lead-in wire crushing portion is the bow-shaped cross-section shape.
The following describes effect of the present invention.
According to semiconductor device of the present invention and lead connecting method, have the effect that improves zygosity between lead-in wire and the protuberance, simultaneously, have the effect that improves the lead-in wire cuttability, improves welding quality.
Description of drawings
Fig. 1 is the plane graph of the semiconductor device of the invention process form.
Fig. 2 is leadframe and the connection lead-in wire between the semiconductor chip and the side view of protuberance of the semiconductor device of expression the invention process form.
Fig. 3 be the invention process form semiconductor device be formed on protuberance plane graph on the semiconductor chip.
Fig. 4 is the key diagram that forms the protuberance operation on semiconductor chip of the semiconductor device of expression the invention process form.
Fig. 5 is the sectional view of cut-out portion of the lead-in wire on protuberance of the semiconductor device of expression the invention process form, wherein, and Fig. 5 (c) expression section A-A and section B-B.
Fig. 6 is the key diagram of the operation that engages of the protuberance on the semiconductor chip of feasible lead-in wire and semiconductor device of expression the invention process form.
Fig. 7 is leadframe and the connection lead-in wire between the semiconductor chip and the side view of protuberance of the semiconductor device of another example of expression the present invention.
Fig. 8 is the key diagram that forms the protuberance operation on semiconductor chip of the semiconductor device of another example of expression the present invention.
Fig. 9 is the key diagram of the operation that engages of the protuberance on the semiconductor chip of feasible lead-in wire and semiconductor device of expression the present invention another example.
Figure 10 is leadframe and the connection lead-in wire between the semiconductor chip and the side view of protuberance of the semiconductor device of the another example of expression the present invention.
Figure 11 is being formed on the protuberance on the semiconductor chip and being connected the plane graph that goes between of semiconductor device of expression the present invention another example.
Figure 12 is the key diagram that forms the protuberance operation on semiconductor chip of the semiconductor device of the another example of expression the present invention.
Figure 13 is the sectional view of cut-out portion of the lead-in wire on protuberance of the semiconductor device of expression the present invention another example, wherein, and Figure 13 (c) expression section A-A and section B-B.
Figure 14 is the key diagram of the operation that engages of the protuberance on the semiconductor chip of feasible lead-in wire and semiconductor device of expression the present invention another example.
Figure 15 is the key diagram that the lead-in wire of the semiconductor device of expression background technology connects operation.
Figure 16 is the key diagram that the lead-in wire of the semiconductor device of expression background technology connects operation.
Figure 17 is the key diagram that the lead-in wire of the semiconductor device of expression background technology cuts off.
Figure 18 is the diastrophic key diagram of lead-in wire of the semiconductor device of expression background technology.
Symbol description is as follows:
The 2-semiconductor chip, the 3-pad, the 4-pin, the 5-ball, 6-pressure welding ball, the 12-lead-in wire, the 14-semiconductor device, the 15-leadframe, the 16-capillary, the 17-binding clasp, 18-tail end lead-in wire, the 19-section that goes between, 20-lead-in wire crushing portion, the 21-protuberance, 21a '-protuberance lead-in wire, first section protuberance of 21a-, second section protuberance of 21b-, the 3rd section protuberance of 21c-, the 22-ramped wedges, the 25-first lead-in wire warpage protuberance, the 27-second lead-in wire warpage protuberance, the 28-section that goes between, the 29-section that goes between, 30,34-lead-in wire crushing portion, chamfered section in the 31-, the 32-bight, the 33-planar portions, 35-cylindrical bight, the 37-straight hole, 41, the 43-shearing section that goes between.
Embodiment
Preferable example of the present invention is described with reference to the accompanying drawings.In following example, though to inscape, kind, combination, shape, configuration waits and has done various qualifications relatively,, these only exemplify, and the present invention is not limited thereto.
[embodiment 1]
As shown in Figure 1, the semiconductor device 14 that relates to of the invention process form comprises: the leadframe 15 that is provided with pin 4; By the semiconductor chip 2 of welded and installed on leadframe 15; Be formed on the protuberance 21 on the pad 3, described pad 3 is formed on the semiconductor chip 2; Be used to connect the lead-in wire 12 of pin 4 and protuberance 21.Form pressure welding ball 6 by being welded on the pin 4, lead-in wire 12, engages towards protuberance 21 loopings from this pressure welding ball 6.Lead-in wire 12 is gold wires, and pad 3, pin 4 be by copper, nickel, and flash plating gold etc. constitute with the material of golden zygosity difference.
As shown in Figure 2, the protuberance 21 that is formed on the pad 3 comprises from 3 orders of pad: first section protuberance 21a, the first lead-in wire warpage protuberance 25, second section protuberance 21b, the second lead-in wire warpage protuberance 27, ramped wedges 22 above the protuberance, lead-in wire section 29, warpage lead-in wire 12 becomes laminated construction.Described first section protuberance 21a is made of pressure welding ball 6 and the protuberance lead-in wire 21a ' that piles up on it, the described first lead-in wire warpage protuberance 25 is formed on the rightabout of pin 4, described second section protuberance 21b forms from first section protuberance pushing lead-in wire 12, the described second lead-in wire warpage protuberance 27 is formed on pin 4 sides, and described lead-in wire section 29 is to cut off lead-in wire 12 to form when warpage lead-in wire 12 forms protuberance 21.On pin 4, once weld as first junction point, after forming pressure welding ball 6, lead-in wire 12 is towards protuberance 21 loopings, engages with the ramped wedges that is positioned at as above the protuberance 21 that forms on the pad 3 at second junction point, be provided with the section 19 that goes between in the rightabout first lead-in wire warpage protuberance, 25 sides that are formed on pin 4 of protuberance 21.
Protuberance 21 upper central become recess, and along lead-in wire 12 closures, the first lead-in wire warpage protuberance, 25, the second lead-in wire warpage protuberances 27 that are positioned at both sides become convex form towards last direction.Ramped wedges 22 is the clinoplains that form towards the second lead-in wire warpage protuberance 27 that is positioned at as pin 4 sides at first junction point from central indentation.Like this, the inclination of ramped wedges 22 is the pin 4 side height height as first junction point, along the direction of pad 3 sides towards second junction point from first junction point, becomes the inclination of height step-down.Lead-in wire 12 engages along the face of this ramped wedges 22.
Be provided with the inclined-plane above the protuberance 21, uprise towards the first lead-in wire warpage protuberance 25 that is positioned at as the opposition side of the pin 4 at first junction point from central indentation.Along this first lead-in wire warpage protuberance 25, have the lead-in wire section 29 when forming protuberance, and the lead-in wire section 19 during wire-bonded.
Fig. 3 is the plane graph of the lead-in wire 12 that engages with protuberance 21.As shown in Figure 3, the first lead-in wire warpage protuberance 25 of protuberance 21 towards with stretch out as the opposite direction of the pin 4 at first junction point, the second lead-in wire warpage protuberance 27 stretches out towards pin 4 directions as first junction point.By Fig. 1 and Fig. 2 as can be known, the first lead-in wire warpage protuberance 25 is for roughly being the spherical shape for lugs of semicircle above protuberance 21, pin 4 sides at conduct first junction point of the second lead-in wire warpage protuberance 27 are the spherical shape for lugs of partial circle above protuberance 21, and opposition side becomes the inclined plane of ramped wedges 22.
Each section 19,29 that goes between is arc shape cross section.Between the lead-in wire section 19 and the first lead-in wire warpage protuberance 25 of lead-in wire 12 that the lead-in wire section 29 of the lead-in wire 12 when forming protuberance can be when wire-bonded, also can be positioned at lead-in wire section 19 downsides, be between lead-in wire section 19 and the second section protuberance 21b.
Illustrate that protuberance 21 forms before the action, illustrates capillary 16 structures.Shown in Fig. 4 (a)-(h), capillary 16 comprises interior chamfered section 31, planar portions 33, and cylindrical bight 35, straight hole 37 is made of hard materials such as potteries.Planar portions 33 is located on the top end face of capillary 16, is the plane that relative pad 3 has minute angle, will be formed on the ball 5 and 12 pad 3 pressure weldings towards semiconductor chip 2 of warpage lead-in wire of lead-in wire 12 front ends with this plane.Straight hole 37 is through holes, and its internal diameter is more some greatly than lead-in wire 12 external diameters that are located at capillary 16 centers, and lead-in wire 12 inserts in this straight hole 37 of break-through.Interior chamfered section 31 is provided in a side of the bellmouth between straight hole 37 and the planar portions 33, becomes big towards planar portions 33.Interior chamfered section 31 pushes ball in welding towards pad 3, simultaneously, make ball compress along diametric(al), forms pressure welding ball 6.Be provided with bight 32 between interior chamfered section 31 and the planar portions 33.Because planar portions 33 relative pads 3 have minute angle, therefore, when with the planar portions 33 of capillary 16 during towards lead-in wire 12 pushings, nip and go between 12 in the bight 32 between interior chamfered section 31 and the planar portions 33.
Formation protuberance 21 operations on the pad 3 of semiconductor chip 2 of the semiconductor device 14 of this example are described with reference to Fig. 4 (a)-(h).Lead-in wire 12 inserts in the straight hole 37 of break-through capillaries 16, and protuberance 21 does not make above-mentioned capillary 16 as soldering appliance move formation up and down by there being illustrated lead bonding device.
Shown in Fig. 4 (a), after the ball that will be formed on lead-in wire 12 front ends when capillary 16 formed pressure welding balls 6 towards pad 3 pushing, capillary 16 rose, and meanwhile, moved towards promptly illustrating right with pin 4 rightabouts as first junction point.If capillary 16 laterally moves, then going between 12 engages with pad 3 by pressure welding ball 6, and therefore, the interior chamfered section 31 of capillary 16 is collided with 12 outsides that go between, the 12 horizontal moving directions towards capillary 16 that go between, generation flexural deformation.And capillary 16 moves laterally to the position that pin 4 side plane portions 33 are in pressure welding ball 6 centers, so that make lead-in wire 12 enter between planar portions 33 and the pressure welding ball 6.
Shown in Fig. 4 (b), capillary 16 moves toward belows, will enter lead-in wire 12 between planar portions 33 and the pressure welding ball 6 towards 3 pushings of pad by pin 4 side plane portions 33.The 12 pressurized soldered balls 6 that go between push, and form flat pattern, become protuberance lead-in wire 21a '.Form first section protuberance 21a by pressure welding ball 6 and the protuberance lead-in wire 21a ' that forms flat pattern.Lead-in wire 12 and first section protuberance 21a of inserting break-through capillary 16 are continuous at the opposition side of the pin 4 of protuberance 21, and the continuous part of this lead-in wire 12 is pressed by interior chamfered section 31 thruster down of capillary 16, and along the cone-shaped of interior chamfered section 31, lead-in wire 12 is shaped.Like this, lead-in wire 12 towards with gap part of the straight hole 37 and the lead-in wire 12 of pin 4 opposition sides direction inclination up capillary 16, become and be subjected to the such shape of straight hole 37 guiding.
Shown in Fig. 4 (c), capillary 16 rises after forming first section protuberance 21a, towards with rightabout pin 4 side shiftings of the crosswise movement of front.By laterally moving of capillary 16, the interior chamfered section 31 of capillary 16 is collided with lead-in wire 12 outsides.Forming under first section protuberance 21a state, lead-in wire 12 tilts towards the opposition sides of pin 4, therefore, and lead-in wire 12 laterally the moving between planar portions 33 and the first section protuberance 21a because of capillary 16, towards pin 4 side warpages, form the first lead-in wire warpage protuberance 25 from the opposition side of pin 4.And the planar portions 33 that capillary 16 moves laterally to pin 4 opposition sides towards pin 4 sides is in the substantial middle position of first section protuberance 21a.
Shown in Fig. 4 (d), after capillary 16 laterally moved, capillary 16 moved toward belows, and the planar portions 33 by pin 4 opposition sides will enter lead-in wire 12 between planar portions 33 and the first section protuberance 21a towards pad 3 pushings.Lead-in wire 12 is pushed by first section protuberance 21a, forms flat pattern, simultaneously, is bonded on first section protuberance 21a, forms second section protuberance 21b.The first lead-in wire warpage protuberance 25 departs from the planar portions 33 of capillary 16, therefore, can be because of capillary 16 move toward belows towards the pushing of pad 3 directions, become the roughly semi-round ball shape of direction projection up at second section protuberance 21b with pin 4 opposition sides.In addition, the first lead-in wire warpage protuberance 25 forms second section protuberance 21b because of capillary 16 moves down, and is roughly 180 degree warpages.Therefore, the first lead-in wire warpage protuberance 25 is because of bending causes work hardening, than other part hardness height.Lead-in wire 12 and second section protuberance 21b of inserting break-through capillary 16 are continuous in pin 4 sides of protuberance 21, and the continuous part of this lead-in wire 12 is pressed by interior chamfered section 31 thruster down of capillary 16, and along the cone-shaped of interior chamfered section 31, lead-in wire 12 is shaped.Like this, lead-in wire 12 is towards gap part of the straight hole 37 and the lead-in wire 12 of pin 4 sides direction inclination up capillary 16, becomes to be subjected to the such shape of straight hole 37 guiding.
Shown in Fig. 4 (e), after the second section protuberance 21b and the first lead-in wire warpage protuberance 25 formed, capillary rose, and moves towards the opposition side with the rightabout pin 4 of crosswise movement just now.By laterally moving of capillary 16, the interior chamfered section 31 of capillary 16 is collided with lead-in wire 12 outsides.Forming under second section protuberance 21b state, lead-in wire is 12 oblique towards pin 4 inclinations, therefore, and lead-in wire 12 laterally the moving between planar portions 33 and the second section protuberance 21b because of capillary 16, opposition side warpage from pin 4 sides towards pin 4 forms the second lead-in wire warpage protuberance 27.And the center that capillary 16 moves to straight hole 37 roughly becomes the position of the center of the first lead-in wire warpage protuberance 25.If the center of capillary 16 moves to the center of the first lead-in wire warpage protuberance 25, then the second lead-in wire warpage protuberance 27 breaks away from the planar portions 33 of capillary 16, and its part is compared with cylindrical bight 35, more close pin 4 sides.
Shown in Fig. 4 (f), after capillary 16 laterally moves, capillary 16 moves down, make the first lead-in wire warpage protuberance 25 roughly be the semi-round ball shape enter in the straight hole 37, will enter lead-in wire 12 between planar portions 33 and the second section protuberance 21b towards pad 3 pushings by pin 4 side plane portions 33.Lead-in wire 12 is pushed by second section protuberance 21b, forms flat pattern, simultaneously, is bonded on second section protuberance 21b, forms the 3rd section protuberance 21c.Lead-in wire 12 and the 3rd section protuberance 21c of inserting break-through capillary 16 are continuous at the opposition side of the pin 4 of protuberance 21, and the continuous part of this lead-in wire 12 is by first lead-in wire warpage protuberance 25 pushings of the interior chamfered section 31 of capillary 16 towards pad 3 sides.The first lead-in wire warpage protuberance 25 is harder than other parts because of the work hardening of bending machining in preceding operation, therefore, can make lead-in wire 12 compressions between the interior chamfered section 31 that sandwiches the capillary 16 that is made of hard material.Therefore, move down by capillary 16, interior chamfered section 31 compressions sandwich and first lead-in wire 12 that goes between between the warpage protuberance 25, nip and go between 12 in the bight 32 of interior chamfered section 31, the bonding part of lead-in wire 12 forms the lead-in wire crushing portion 30 with bowed shape cross section 29, and the sectional area of the sectional area ratio lead-in wire 12 in described bowed shape cross section 29 is little.
Shown in Fig. 5 (c), lead-in wire 12 is subjected to the interior chamfered section 31 of rounded taper shape and roughly is the first lead-in wire warpage protuberance, 25 clampings of semi-round ball shape, is compressed shaping, forms along the lead-in wire crushing portion 30 that is bowed shape of the first lead-in wire warpage protuberance, 25 outsides.Lead-in wire crushing portion 30 is positioned at pin 4 sides of the first lead-in wire warpage protuberance 25.Shown in Fig. 5 (a), the lead-in wire 12 after the shaping is towards gap part of the straight hole 37 and the lead-in wire 12 of the opposition side inclination capillary 16 of pin 4, becomes to be subjected to straight hole 37 direction that leads up to extend such shape.
Because foregoing capillary 16 moves, the second lead-in wire warpage protuberance 27 breaks away from the planar portions 33 of capillary 16, therefore, can not move toward the below towards second section protuberance 21b direction pushing because of capillary 16, pin 4 sides at the 3rd section protuberance 21c become than the convex form that is subjected to the high partial circle sphere of planar portions 33 crimping sections.In addition, the second lead-in wire warpage protuberance 27 forms the 3rd section protuberance 21c because of capillary 16 moves down, and is roughly 180 degree warpages, and therefore, the second lead-in wire warpage protuberance 27 is because of bending causes work hardening, than other part hardness height.Become between the bight 32 swaged leads part of the second lead-in wire warpage protuberance 27 of convex form up and interior chamfered section 31, form ramped wedges 22, its opposition side step-down from pin 4 sides towards pin 4 as the inclined plane.The shape of the face of ramped wedges 22 becomes roughly the shape along planar portions 33 and cylindrical bight 35.
Shown in Fig. 4 (g), if forming, finish the 3rd section protuberance 21c, then capillary 16 rises.At this moment, do not have illustrated binding clasp to be in open state, therefore, rise by capillary 16, tail end lead-in wire 18 extends to capillary 16 belows.
Shown in Fig. 4 (h), if rising to the length of tail end lead-in wire 18, capillary 16 becomes for forming the necessary length of next annular, then there is not illustrated binding clasp closure, grip lead-in wire 12, rise with capillary 16.So will go between by binding clasp 12 promotes up, tension force is applied on the lead-in wire 12.In the 3rd section protuberance of aforesaid formation, form the sectional area ratio little lead-in wire crushing portion 30 of 12 sectional areas that goes between, therefore, because of being applied to the tension force on the lead-in wire 12, in the big tensile stress of lead-in wire crushing portion 30 generations.And because this tensile stress, at lead-in wire crushing portion 30 places, lead-in wire is cut off, and forms lead-in wire section 29.The area of crushing portion 30 is little owing to go between, and therefore, when lead-in wire 12 cut off, it was little to be applied to lead-in wire 12 tensile force on the whole, bent because of this tension force resilience causes lead-in wire 12 in the time of reducing lead-in wire 12 cut-outs.If lead-in wire 12 is cut off, the protuberance 21 that then has the multistage warpage lamination of the first lead-in wire warpage protuberance 25 and ramped wedges 22 forms operation and finishes.
Illustrate that with reference to Fig. 6 the feasible lead-in wire 12 of this example is welded on the operation on the protuberance 21 of the pad that is formed on semiconductor chip 23 of semiconductor device 14.
Shown in Fig. 6 (a), be welded on as after on the pin 4 at first junction point, the looping that will go between, mobile capillary 16, the center of straight hole 37 that makes lead-in wire 12 insert the capillary 16 of break-through becomes the approximate centre of the first lead-in wire warpage protuberance 25 of the opposition side that is formed on pin 4.And,, then make capillary 16 move down if the center of capillary 16 arrives the approximate centre of the first lead-in wire warpage protuberance 25.
Shown in Fig. 6 (b), capillary 16 moves down, and makes that roughly being the first spherical lead-in wire warpage protuberance 25 of semicircle enters in the straight hole 37, by the planar portions 33 of pin 4 sides, pushes the lead-in wire 12 that enters between planar portions 33 and the ramped wedges 22 towards ramped wedges 22.In pin 4 sides of protuberance 21 of lead-in wire 12 loopings, the second lead-in wire warpage protuberance 27 of sclerosis direction up protrudes, and therefore, pin 4 sides of the lead-in wire 12 that the planar portions 33 by capillary 16 push are down supported by the second lead-in wire warpage protuberance 27.Then, if capillary 16 further moves down, the lead-in wire 12 that then enters between planar portions 33 and the ramped wedges 22 is deformed into along the shape of ramped wedges 22.Then, if capillary 16 further moves down, then go between 12 above become along the planar portions 33 of capillary 16 and the shape in cylindrical bight 35, be compressed in below the lead-in wire 12 on 22 of the ramped wedges, be deformed into along the shape of ramped wedges 22, the following and protuberance 21 of lead-in wire 12 engages.The face of ramped wedges 22 and lead-in wire 12 have big bonding area, therefore, improve the zygosity of lead-in wire 12 and protuberance 21.
The lead-in wire 12 that extends towards pin 4 sides is supported by the second lead-in wire warpage protuberance 27 that hardens, therefore, even the planar portions 33 of capillary 16 and cylindrical bight 35 pushing lead-in wires 12 can not be out of shape towards pad 3 towards downside yet, therefore, can prevent to go between and 12 contact with pin 4 or semiconductor chip 2.
The opposition side of the top pin 4 at protuberance 21 that inserts the lead-in wire 12 of break-through capillary 16 and ramped wedges 22 is continuous, the continuous part of this lead-in wire 12 forms lead-in wire crushing portion 20, it is because of the first lead-in wire warpage protuberance, the 25 extruding compressions that the interior chamfered section 31 of capillary 16 is hardened, and the sectional area of the sectional area ratio lead-in wire 12 of the bonding part of lead-in wire 12 is little.As Fig. 5 (b), (c) shown in, the shape of lead-in wire crushing portion 20, cross section and front are with reference to Fig. 5 (a), (b) illustrated lead-in wire crushing portion 30 is identical, is along the bowed shape of the first lead-in wire warpage protuberance, 25 outsides, is positioned at first pin 4 sides that go between warpage protuberance 25.
If lead-in wire 12 finishes to the joint of protuberance 21, then shown in Fig. 6 (c), capillary 16 rises.At this moment, do not have illustrated binding clasp to be in open state, therefore, because capillary 16 rises, tail end lead-in wire 18 extends to capillary 16 belows.
Shown in Fig. 6 (d), if rising to the length of tail end lead-in wire 18, capillary 16 becomes for forming the necessary length of next annular, then there is not illustrated binding clasp closure, grip lead-in wire 12, rise with capillary 16.So will go between by binding clasp 12 promotes up, tension force is applied on the lead-in wire 12, and at sectional area ratio little lead-in wire crushing portion 20 places of 12 sectional areas that go between, lead-in wire 12 is cut off.Because the area of lead-in wire crushing portion 20 is little, therefore, because of causing lead-in wire 12, this tension force resilience bends in the time of reducing lead-in wire 12 cut-outs.If lead-in wire 12 is cut off, then form along the lead-in wire section 19 that is bowed shape of the side of pin 4 sides of the first lead-in wire warpage protuberance 25.If lead-in wire 12 is cut off, then engages operation and finish.
In the semiconductor device 14 of this example of above-mentioned explanation, make lead-in wire 12 be bonded on the face of ramped wedges 22 with big bonding area, therefore, have the effect that improves lead-in wire 12 and protuberance 21 zygosities.In addition, reach when forming protuberance 21 and make lead-in wire 12 when protuberance 21 engages, the first lead-in wire warpage protuberance 25 and interior chamfered section 31 by sclerosis sandwich lead-in wire 12, form the sectional area ratio little lead-in wire crushing portion 20,30 of 12 sectional areas that goes between, by lead-in wire crushing portion 20,30 cut off lead-in wire 12, therefore, lead-in wire 12 cut-out power is little, has can reduce because of resilience to cause 12 effects that bend that go between.When lead-in wire 12 engaged with protuberance 21, lead-in wire 12 was supported by the second lead-in wire warpage protuberances 27 of hardening, therefore, can not prevent to go between 12 effects that contact with pin 4 or semiconductor chip 2 because of welding under 3 side direction of pad, having.Like this, in this example, have and to improve zygosity effect between lead-in wire 12 and the protuberance 21, have the effect that improves lead-in wire 12 cuttabilities, improves bond quality simultaneously.
In above-mentioned example, the pad 3 of the semiconductor chip 2 at second junction point is in the position higher than the pin 4 of the leadframe 15 at first junction point, protuberance 21 is formed on the described pad 3, describe for above-mentioned this state, still, protuberance 21 both can be formed on the position higher than first junction point, also can be formed on the position lower than first junction point, in addition, be not limited on the pad 3, also can be formed on the pin 4 of leadframe 15.
[embodiment 2]
Below, with reference to another example of description of drawings the present invention.Be marked with same-sign with above-mentioned example same section, omission is described.
As shown in Figure 7, the protuberance 21 that is formed on the pin 4 comprises from 4 orders of pin: first section protuberance 21a, the first lead-in wire warpage protuberance 25, second section protuberance 21b, ramped wedges 22 above the protuberance, lead-in wire section 28, warpage lead-in wire 12 becomes laminated construction.Described first section protuberance 21a is made of pressure welding ball 6 and the protuberance lead-in wire 21a ' that piles up on it, the described first lead-in wire warpage protuberance 25 is formed on the rightabout of pad 3, described second section protuberance 21b forms from first section protuberance pushing lead-in wire 12, and described lead-in wire section 28 is to cut off lead-in wire 12 to form when warpage lead-in wire 12 forms protuberance 21.On pad 3, once weld as first junction point, after forming pressure welding ball 6, lead-in wire 12 is towards protuberance 21 loopings, engages with the ramped wedges that is positioned at as above the protuberance 21 that forms on the pin 4 at second junction point, be provided with the section 19 that goes between in the rightabout first lead-in wire warpage protuberance, 25 sides that are formed on pad 3 of protuberance 21.
Formation protuberance 21 operations on the pin 4 of leadframe 15 of the semiconductor device 14 of this example are described with reference to Fig. 8.Identical from the formation operation from the protuberance 21 of Fig. 4 (a)-(d) of the formation operation of the protuberance 21 of Fig. 8 (a)-(d) and above-mentioned example explanation, the pad 3 of Fig. 4 (a)-(d) operation is replaced into pin 4, pin 4 is replaced into pad 3, first junction point is that pad 3, the second junction points of semiconductor chip 2 are pins 4 of leadframe 15.According to the operation of Fig. 8 (a)-(d), form first section protuberance 21a, second section protuberance 21b, the first lead-in wire warpage protuberance 25.When forming second section protuberance 21b, by the planar portions 33 of extruding capillary 16, formation has the ramped wedges 22 on inclined plane.Ramped wedges 22 has the inclined plane, and this inclined plane is from being positioned at the first lead-in wire warpage protuberance 25 as the opposition side of the pad 3 at first junction point towards pad 3 side step-downs.In addition, lead-in wire 12 and second section protuberance 21b of inserting break-through capillary 16 are continuous in pad 3 sides of protuberance 21, in the continuous part formation sectional area ratio of this lead-in wire 12 little lead-in wire crushing portion 34 of 12 sectional areas that goes between.
Shown in Fig. 8 (e), if forming, finish second section protuberance 21b, then capillary 16 rises under the illustrated binding clasp open mode not having.If capillary 16 rises, tail end lead-in wire 18 extends to capillary 16 downsides.
Shown in Fig. 8 (f), after the length that capillary 16 rises to tail end lead-in wire 18 became institute's measured length, the binding clasp closure gripped lead-in wire 12, rises with capillary 16.So when forming second section protuberance 21b, the sectional area ratio that forms by capillary 16 front ends goes between and applies big stress in the little lead-in wire crushing portion 34 of 12 sectional areas, lead-in wire 12 is cut off.If lead-in wire 12 is cut off, then form lead-in wire section 28.This lead-in wire section 28 protrudes toward upside above ramped wedges 22 slightly.
The lead-in wire 12 that this example is described with reference to Fig. 9 engages to protuberance 21.Be marked with same-sign with above-mentioned Fig. 6 same section, omission is described.The protuberance 21 of this example forms lead-in wire section 28 in pad 3 sides of lead-in wire 12 loopings.Lead-in wire section 28 is not that warpage lead-in wire 12 is shaped, therefore, and not sclerosis.Thereby the aforementioned example of force rate of supporting lead-in wire 12 is little.But as shown in Figure 7, in this example, protuberance 21 is formed on than on the low pin 4 in pad 3 positions of semiconductor chip 2, therefore, as shown in Figure 9, pad 3 sides of the conduct first junction point side of the lead-in wire 12 of looping up direction by drawing.Therefore, even can support lead-in wire 12, can not go between 12 towards downside distortion and contact with pin 4 at the lead-in wire section 28 that does not have sclerosis yet yet.The ramped wedges 22 of bonding wire 12 and the contact area of lead-in wire 12 are big, and make that the center of the first lead-in wire warpage protuberance 25 of center and sclerosis of straight hole 37 of capillary 16 is consistent, weld, form the sectional area ratio little lead-in wire crushing portion 20 of 12 sectional areas that goes between, it is identical with aforementioned example to cut off lead-in wire 12 by this lead-in wire crushing portion 20.
The semiconductor device 14 of this example of above-mentioned explanation is identical with aforementioned example, has the effect that can improve zygosity between lead-in wire 12 and the protuberance 21, has the effect that can improve lead-in wire 12 cuttabilities, improve bond quality simultaneously.Have, the lamination number of times of the protuberance 21 of this example is that first section and second section are two-layer again, therefore, can the short time form protuberance, has the effect that can shorten weld time.
In above-mentioned example, pin 4 as second junction point is in the position lower than first junction point, on pin 4, form protuberance 21, describe for above-mentioned state, but, if form protuberance 21 at second junction point that is positioned at the position lower than first junction point, then be not limited on the pin 4, also can be formed on the pad 3 of semiconductor chip 2.
[embodiment 3]
Below, with reference to the another example of description of drawings the present invention.Be marked with same-sign with above-mentioned example same section, omission is described with reference to Fig. 2-Fig. 6 explanation.This example relates to by the front end capillary 16 thinner than aforementioned example and carries out the method for wire-bonded and the semiconductor device of making according to this method.In recent years, use the thin capillary of front end 16 mostly, so that corresponding with the thin spaceization of semiconductor device, but if capillary 16 front ends attenuate, then in the example of reference Fig. 2-Fig. 6 explanation, the second lead-in wire warpage protuberance 27 forms independently hemispherical, can not support annular lead wire sometimes.Even this example holds thin capillary 16 to carry out the wire-bonded occasion before use, also can effectively support annular lead wire, improve the zygosity between lead-in wire 12 and the protuberance 21.
As shown in figure 10, the protuberance 21 that is formed on the pad 3 comprises from 3 orders of pad: first section protuberance 21a, the first lead-in wire warpage protuberance 25, second section protuberance 21b, the second lead-in wire warpage protuberance 27, ramped wedges 22 above the protuberance, lead-in wire section 29, warpage lead-in wire 12 becomes laminated construction.Described first section protuberance 21a is made of pressure welding ball 6 and the protuberance lead-in wire 21a ' that piles up on it, the described first lead-in wire warpage protuberance 25 is formed on the rightabout of pin 4, described second section protuberance 21b forms from first section protuberance pushing lead-in wire 12, the described second lead-in wire warpage protuberance 27 is formed on pin 4 sides, and described lead-in wire section 29 is to stretch along its length to cut off lead-in wire 12 formation when warpage lead-in wire 12 forms protuberances 21.Once weld on the pin 4 as first junction point, behind the formation pressure welding ball 6, lead-in wire 12 engages with the ramped wedges that is positioned at as above the protuberance 21 that forms on the pad 3 at second junction point towards protuberance 21 loopings.The rightabout first lead-in wire warpage protuberance, 25 sides that are formed on pin 4 at protuberance 21 are provided with lead-in wire shearing section 43 and lead-in wire section 19, it is to cut off the lead-in wire 12 local shearing sections that get by radial shear power that described lead-in wire is sheared section 43, and described lead-in wire section 19 is that drawing lead-in wire 12 cuts off and the stretching section that gets along its length.Described lead-in wire is sheared section 43 becomes face with the face almost parallel that comprises pad 3 of semiconductor device 14.
Protuberance 21 upper central become recess, and along lead-in wire 12 closures, the first lead-in wire warpage protuberance, 25, the second lead-in wire warpage protuberances 27 that are positioned at both sides become convex form towards last direction.Ramped wedges 22 is towards inclined plane that the second lead-in wire warpage protuberance 27 that is positioned at as pin 4 sides at first junction point forms from central indentation.Like this, the inclination of ramped wedges 22 is the pin 4 side height height as first junction point, along the direction of pad 3 sides towards second junction point from first junction point, becomes the inclination of height step-down.Lead-in wire 12 engages along the face of this ramped wedges 22.
Lead-in wire section 19 when the first lead-in wire warpage protuberance 25 has lead-in wire section 29 when forming protuberance and wire-bonded.Lead-in wire is sheared section 43 and is positioned at and described lead-in wire section 19 adjacency.
As shown in figure 11, the first lead-in wire warpage protuberance 25 of protuberance 21 towards with stretch out as the opposite direction of the pin 4 at first junction point, the second lead-in wire warpage protuberance 27 stretches out towards pin 4 directions as first junction point.The first lead-in wire warpage protuberance 25 is for roughly being the spherical shape for lugs of semicircle above protuberance 21, pin 4 sides at conduct first junction point of the second lead-in wire warpage protuberance 27 are the spherical shape for lugs of partial circle above protuberance 21, and opposition side becomes the inclined plane of ramped wedges 22.
Each section 19,29 that goes between is arc shape cross section.Between the lead-in wire section 19 and the first lead-in wire warpage protuberance 25 of lead-in wire 12 that the lead-in wire section 29 of the lead-in wire 12 when forming protuberance can be when wire-bonded, also can be positioned at lead-in wire section 19 downsides, be between lead-in wire section 19 and the second section protuberance 21b.It is faces of radially shearing lead-in wire 12 parts from pin 4 sides towards pad 3 that lead-in wire is sheared section 43, therefore, becomes towards the selenodont shape of pin 4 bendings, is connected with described lead-in wire section 19.
Formation protuberance 21 operations on pad 3 of the semiconductor device 14 of this example are described with reference to Figure 12.Identical with the formation operation from the protuberance 21 of Fig. 4 (a)-(b) of above-mentioned explanation, form the protuberance lead-in wire 21a ' of pressure welding ball 6 and pressurized soldered ball 6 extruding formation flat patterns.21a ' forms first section protuberance 21a by pressure welding ball 6 and protuberance lead-in wire, according to Fig. 4 (c)-(d) same processes, form first go between warpage protuberance 25 and the second section protuberance 21b of pressure welding on this first section protuberance 21a.
Shown in Figure 12 (a), form the second section protuberance 21b and the first lead-in wire warpage protuberance 25 after, capillary rises, and moves towards the opposition side of pin 4.By laterally moving of capillary 16, the lead-in wire 12 opposition side warpage from pin 4 sides towards pin 4 forms the second lead-in wire warpage protuberance 27.And the end face in the cylindrical bight 35 of pin 4 sides of capillary 16 moves to the position of the center that roughly becomes the second lead-in wire warpage protuberance 27.In this position, the center of the straight hole 37 of capillary 16 becomes the position that is displaced to pin 4 sides from the center of the first lead-in wire warpage protuberance 25.
Shown in Figure 12 (b), after capillary 16 laterally moves, capillary 16 by pin 4 sides cylindrical bight 35 and and its continuous planar portions 33 will enter lead-in wire 12 between planar portions 33 and the second section protuberance 21b towards pad 3 pushings.Lead-in wire 12 is formed flat pattern by second section protuberance 21b pushing, and simultaneously, pressure welding forms the 3rd section protuberance 21c on second section protuberance 21b.The end face in the cylindrical bight 35 of pin 4 sides of capillary 16 is under the center that roughly is in the second lead-in wire warpage protuberance 27, move down, therefore, the end face in cylindrical bight 35 and the planar portions 33 continuous with it with semi-convex of the opposition side that is in pin 4 from the center of the second lead-in wire warpage protuberance 27 towards pad 3 extruding.Like this, the opposition side of the pin 4 of the second lead-in wire warpage protuberance 27 is partially-formed to be shape along the end face in cylindrical bight 35 and the planar portions 33 continuous with it, opposition side from the approximate centre position of the second lead-in wire warpage protuberance 27 towards pin 4 forms crooked curved surface, and with the continuous clinoplain of this curved surface towards the opposition side step-down of pin 4.This curved surface and plane become ramped wedges 22.The second lead-in wire warpage protuberance 27 be not subjected to cylindrical bight 35 and planar portions 33 towards pad 3 pushings from the center towards half of pin 4 sides, therefore, the part becomes the ball shape.The second lead-in wire warpage protuberance 27 forms the 3rd section protuberance 21c because of capillary 16 moves down, with 180 degree warpages roughly, the second lead-in wire warpage protuberance 27 is because of bending causes work hardening, other part height of its hardness ratio.Like this, the end face in the cylindrical bight 35 of capillary 16 and the planar portions 33 continuous with it are pushed half protuberance of the opposition side that is in pin 4 from the center of the second lead-in wire warpage protuberance 27 towards pad 3, therefore, even the thin occasion of capillary 16 front ends, the second lead-in wire warpage protuberance 27 can not become independently dome-type protuberance yet, can be configured as the partial circle ball shape of pin 4 sides and the ramped wedges 22 continuous with it.
Shown in Figure 12 (c), if because of capillary 16 moves down, form the 3rd section protuberance 21c, second lead-in wire warpage protuberance 27 and the ramped wedges 22, then capillary 16 rises to the highly low position, upper end of its front end aspect ratio first lead-in wire warpage protuberance 25 above ramped wedges 22.
Shown in Figure 12 (d), after capillary 16 rises, towards the opposition side of pin 4, along laterally moving with pad 3 almost parallel directions.Inserting the lead-in wire 12 of break-through capillary 16 and the continuous part of the 3rd section protuberance 21c is pushed towards pin 4 sides of the first lead-in wire warpage protuberance 25 by the straight hole 37 of capillary 16 and interior chamfered section 31.The first lead-in wire warpage protuberance 25 is because of preceding operation bending machining causes work hardening, and is harder than other parts, therefore, can make the straight hole 37 and the lead-in wire between the interior chamfered section 31 12 that are clipped in the capillary 16 that is made of hard material be out of shape.Then, if make capillary 16 further laterally move towards the opposition side of pin 4, then nip and go between 12 in the bight 32 of the interior chamfered section 31 of capillary 16, edge portion by bight 32 begins radially to shear cut-out lead-in wire 12, shears section 41 because of shearing the lead-in wire that cuts off the tableland shape that forms top approximate horizontal.Simultaneously, the lead-in wire 12 of interior chamfered section 31 compression clip between the first lead-in wire warpage protuberance 25, form lead-in wire 12 continuous part have go between a lead-in wire crushing portion 30 in the little bowed shape cross section of 12 sectional areas of sectional area ratio.
Shown in Figure 13 (c), lead-in wire 12 is by the interior chamfered section 31 of circular taper and roughly be the spherical first lead-in wire warpage protuberance, the 25 extruding compression moldings of semicircle, forms along the lead-in wire crushing portion 30 of the bowed shape of the first lead-in wire warpage protuberance, 25 outsides.Lead-in wire crushing portion 30 is positioned at pin 4 sides of the first lead-in wire warpage protuberance 25.Pin 4 sides in lead-in wire crushing portion 30 have lead-in wire shearing section 41, and it passes through radially shearing and cuts off lead-in wire 12 part formation.It is the crescent flat shape of protruding towards pin 4 sides that lead-in wire is sheared section 41, becomes above it with pad 3 almost parallels, from the tableland shape of ramped wedges 22 risings.And shown in Figure 13 (a), the lead-in wire 12 after the shaping is led by straight hole 37 towards gap part of the straight hole 37 and the lead-in wire 12 of the opposition side inclination capillary 16 of pin 4, and direction is extended up.
Shown in Figure 12 (e), to shear to cut off lead-in wire 12 and form lead-in wire crushing portion 30 1 and finish, capillary 16 just rises.At this moment, do not have illustrated binding clasp to be in open state, therefore, because of capillary 16 rises, tail end lead-in wire 18 extends to capillary 16 belows.
Shown in Figure 12 (f), if rising to the length of tail end lead-in wire 18, capillary 16 becomes necessary length for forming next annular, then there is not illustrated binding clasp closure, grip lead-in wire 12, rise with capillary 16.So will go between by binding clasp 12 promotes up, tension force is applied on the lead-in wire 12.The sectional area ratio of lead-in wire crushing portion 30 12 sectional areas that go between are little, therefore, owing to be applied to tension force on the lead-in wire 12, produce big tensile stress in lead-in wire crushing portion 30.And,, form lead-in wire section 29 because this tensile stress at lead-in wire crushing portion 30 places, stretches and cuts off lead-in wire 12.The area of lead-in wire crushing portion 30 is little, and therefore, it is little that 12 stretchings that go between are applied to lead-in wire 12 tensile force on the whole when cutting off, and bends because of this tensile force resilience causes lead-in wire 12 in the time of reducing lead-in wire 12 stretching cut-outs.The cut-out if lead-in wire 12 is stretched, the protuberance 21 that then is provided with the multistage warpage lamination of the first lead-in wire warpage protuberance 25 and ramped wedges 22 forms operation and finishes.
12 operations that are bonded on the protuberance 21 that forms on the pad 3 of semiconductor chip 2 that will go between of the semiconductor device 14 of this example are described with reference to Figure 14.
Shown in Figure 14 (a), after carrying out first welding on the pin 4 as first junction point, feasible lead-in wire 12 loopings, make capillary 16 laterally move, cylindrical bight 35 end faces of pin 4 sides of the capillary 16 of feasible lead-in wire 12 insertion break-through become the position of pin 4 side ends that are formed on the ramped wedges 22 above the protuberance 21, beginning welding sequence.Then, if cylindrical bight 35 end faces of pin 4 sides of capillary 16 arrive the position of pin 4 side ends that are formed on the ramped wedges 22 above the protuberance, then make capillary 16 move down.
Shown in Figure 14 (b), cylindrical bight 35 end faces of pin 4 sides of capillary 16 and the planar portions 33 continuous with it move down along the face of ramped wedges 22, and the planar portions 33 by pin 4 sides will enter lead-in wire 12 between planar portions 33 and the ramped wedges 22 towards ramped wedges 22 pushings.Pin 4 sides of protuberance 21 of 12 loopings of going between form the partial circle ball shape, because of warpage work hardening, therefore, supported by the second lead-in wire warpage protuberance 27 by pin 4 sides of the lead-in wire 12 that the planar portions 33 of capillary 16 down push.Then, if capillary 16 further moves down, the lead-in wire 12 that then enters between planar portions 33 and the ramped wedges 22 is deformed into along the shape of ramped wedges 22.Then, if capillary 16 further moves down, then go between 12 above become along the planar portions 33 of capillary 16 and the shape in cylindrical bight 35, be subjected to 22 extruding of ramped wedges below the lead-in wire 12, be deformed into along the shape of 22 of ramped wedges, the following and protuberance 21 of lead-in wire 12 engages.At this moment, the lead-in wire of the tableland shape that produces when forming protuberance 21 is sheared on the section 41 and is also pushed by lead-in wire 12, and lead-in wire is sheared section 41 collapses and engaged with lead-in wire 12.The face of ramped wedges 22, lead-in wire shear section 41 and lead-in wire 12 has big bonding area, improves the zygosity of lead-in wire 12 and protuberance 21.
The lead-in wire 12 that extends towards pin 4 sides is supported by the second lead-in wire warpage protuberance 27 that hardens, therefore, even the planar portions 33 of capillary 16 and cylindrical bight 35 swaged leads 12 can not be out of shape towards pad 3 towards downside yet, therefore, can prevent to go between and 12 contact with pin 4 or semiconductor chip 2.
Shown in Figure 14 (c), if because of capillary 16 moves down, lead-in wire 12 finishes to the joint of protuberance 21, and then welding sequence finishes, and the crushing portion that begins to go between forms operation.Capillary 16 rises to its front end aspect ratio first lead-in wire highly low position, warpage protuberance 25 upper ends above ramped wedges 22.
Shown in Figure 14 (d), after capillary 16 rises, towards the opposition side of pin 4, along laterally moving with pad 3 almost parallel directions.Identical with above-mentioned formation protuberance 21 with reference to Figure 12 explanation, if make capillary 16 laterally move towards the opposition side of pin 4, then nip and go between 12 in the bight 32 of the interior chamfered section 31 of capillary 16, edge portion by bight 32 radially shears cut-out lead-in wire 12, shears section 43 because of shearing the lead-in wire that cuts off the tableland shape that forms top approximate horizontal.Simultaneously, the lead-in wire 12 of interior chamfered section 31 compression clip between the first lead-in wire warpage protuberance 25, form lead-in wire 12 continuous part have go between a lead-in wire crushing portion 20 in the little bowed shape cross section of 12 sectional areas of sectional area ratio.If form lead-in wire crushing portion 20, the crushing portion that then goes between forms operation and finishes.
As Figure 13 (b), (c) shown in, the shape of lead-in wire crushing portion 20, cross section and above-mentioned with reference to Figure 13 (a), (c) Shuo Ming lead-in wire crushing portion 30 is identical, is the bowed shape that goes between warpage protuberance 25 outsides along first, is positioned at first pin 4 sides that go between warpage protuberance 25.Lead-in wire is sheared section 43, and also the lead-in wire shearing section 41 with above-mentioned explanation is identical, be positioned at pin 4 sides of lead-in wire crushing portion 20, be the crescent flat shape protruded towards pin 4 sides, become the tableland shape that rises with pad 3 almost parallels, from ramped wedges 22 above it.
Shown in Figure 14 (e), to shear to cut off lead-in wire 12 parts and form lead-in wire crushing portion 20 1 and finish, just rising of capillary 16 begins lead-in wire and cuts off operation.At this moment, do not have illustrated binding clasp to be in open state, therefore, because of capillary 16 rises, tail end lead-in wire 18 extends to capillary 16 belows.
Shown in Figure 14 (f), if rising to the length of tail end lead-in wire 18, capillary 16 becomes necessary length for forming next annular, then there is not illustrated binding clasp closure, grip lead-in wire 12, rise with capillary 16.So will go between by binding clasp 12 promotes up, tension force is applied on the lead-in wire 12.The sectional area ratio of lead-in wire crushing portion 20 12 sectional areas that go between are little, therefore, owing to be applied to tension force on the lead-in wire 12, produce big tensile stress in lead-in wire crushing portion 20.And,, form lead-in wire section 19 because this tensile stress at lead-in wire crushing portion 20 places, stretches and cuts off lead-in wire 12.The area of lead-in wire crushing portion 20 is little, and therefore, it is little that 12 stretchings that go between are applied to lead-in wire 12 tensile force on the whole when cutting off, and bends because of this tensile force resilience causes lead-in wire 12 in the time of reducing lead-in wire 12 stretching cut-outs.If lead-in wire 12 cut-out that are stretched, then form the lead-in wire section 19 of bowed shape of side of pin 4 sides that goes between warpage protuberance 25 along first.If lead-in wire 12 is cut off, then lead-in wire cuts off the operation end, and wire-bonded finishes.
The semiconductor device 14 of this example of above-mentioned explanation is identical with aforementioned example, has the effect that can improve zygosity between lead-in wire 12 and the protuberance 21, has the effect that can improve lead-in wire 12 cuttabilities, improve bond quality simultaneously.Have, engage occasion even form protuberance by the thin capillary 16 of front end, this example also can support annular lead wire effectively, has the effect that can improve zygosity between lead-in wire 12 and the protuberance 21.
In above-mentioned example, be in the high position of pin 4 that likens the leadframe 15 that is first junction point to as the pad 3 of the semiconductor chip 2 at second junction point, on described pad 3, form protuberance 21, describe for above-mentioned state, but protuberance 21 both can be formed on the position higher than first junction point, also can be formed on the position lower than first junction point, and be not limited on the pad 3, also can be formed on the pin 4 of leadframe 15.
Above with reference to description of drawings embodiments of the invention, but the present invention is not limited to above-mentioned example.Can do all changes in the technology of the present invention thought range, they all belong to protection scope of the present invention.

Claims (18)

1. a semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, and the opposition side at first junction point comprises lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises the little section of sectional area ratio lead-in wire sectional area at lead-in wire warpage projection.
2. a semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, and the opposition side at the first junction point side and first junction point comprises lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises the little section of sectional area ratio lead-in wire sectional area at the lead-in wire warpage projection of the opposition side at first junction point.
3. according to the semiconductor device described in claim 1 or 2, it is characterized in that:
Above-mentioned protuberance is the lead-in wire warpage to be stacked on second junction point form, and is provided with the ramped wedges that comprises the inclined plane in the above;
Lead-in wire along ramped wedges with engage above the protuberance.
4. according to the semiconductor device described in the claim 2, it is characterized in that:
Above-mentioned protuberance is the lead-in wire warpage to be stacked on second junction point form, and is provided with the ramped wedges that comprises the inclined plane, along the direction height step-down crustal inclination towards second junction point from first junction point;
Lead-in wire along ramped wedges with engage above the protuberance.
5. according to any described semiconductor device in the claim 1,2,4, it is characterized in that:
Above-mentioned section is the bow-shaped cross-section shape.
6. according to the semiconductor device described in the claim 3, it is characterized in that:
Above-mentioned section is the bow-shaped cross-section shape.
7. a semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, and the opposition side at first junction point comprises lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises at lead-in wire warpage projection and shears section and the little stretching section of sectional area ratio lead-in wire sectional area.
8. a semiconductor device connects between first junction point and second junction point with lead-in wire, it is characterized in that, comprising:
Protuberance, the warpage lamination that will go between is formed on second junction point, at first junction point and the opposition side at first junction point comprise lead-in wire warpage protuberance;
Lead-in wire extends towards protuberance from the first junction point side, is bonded on above the protuberance, comprises at the lead-in wire warpage projection of the opposition side at first junction point and shears section and the little stretching section of sectional area ratio lead-in wire sectional area.
9. according to the semiconductor device described in claim 7 or 8, it is characterized in that:
Above-mentioned protuberance comprises ramped wedges, this ramped wedges contain be positioned at above the first junction point side, along from first junction point towards the inclined plane of the second junction point direction height step-down;
Lead-in wire along ramped wedges with engage above the protuberance.
10. the semiconductor device described in according to Claim 8 is characterized in that:
Above-mentioned protuberance comprises ramped wedges, the lead-in wire warpage protuberance adjacency of this ramped wedges and the first junction point side, this ramped wedges contain be located at above it, along from first junction point towards the inclined plane of the second junction point direction height step-down;
Lead-in wire along ramped wedges with engage above the protuberance.
11., it is characterized in that according to any described semiconductor device in the claim 7,8,10:
Above-mentioned shearing section is parallel with the face of the semiconductor device that comprises second junction point, and the stretching section is the bow-shaped cross-section shape.
12. the semiconductor device according to described in the claim 9 is characterized in that:
Above-mentioned shearing section is parallel with the face of the semiconductor device that comprises second junction point, and the stretching section is the bow-shaped cross-section shape.
13. a lead connecting method connects with lead-in wire between first junction point and second junction point of semiconductor device, it is characterized in that, comprises following operation:
Protuberance forms operation, and the warpage that will go between is stacked on second junction point, and the opposition side at first junction point forms the protuberance that comprises lead-in wire warpage protuberance;
Engage operation, the feasible lead-in wire looping from first junction point towards protuberance, make interior chamfer site capillaceous in lead-in wire warpage protuberance top, planar portions by the capillary front end will go between and push above protuberance, bonding wire, simultaneously, will go between towards the extruding of lead-in wire warpage protuberance, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area by interior chamfered section;
Cut off operation, promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing.
14. the lead connecting method according to described in the claim 13 is characterized in that:
Above-mentioned protuberance forms operation and comprises ramped wedges formation operation, and it is that the lead-in wire warpage is stacked on second junction point that this ramped wedges forms operation, by the planar portions swaged lead of capillary front end, forms ramped wedges;
Described joint operation is that lead-in wire is engaged towards the ramped wedges extruding.
15. the lead connecting method according to described in claim 13 or 14 is characterized in that:
Above-mentioned lead-in wire crushing portion is the bow-shaped cross-section shape.
16. a lead connecting method connects with lead-in wire between first junction point and second junction point of semiconductor device, it is characterized in that, comprises following operation:
Protuberance forms operation, and the warpage that will go between is stacked on second junction point, and the opposition side at first junction point forms the protuberance that comprises lead-in wire warpage protuberance;
Engage operation, make the lead-in wire looping from first junction point towards protuberance, the planar portions by the capillary front end will go between and push bonding wire above protuberance;
Lead-in wire crushing portion forms operation, after making that capillary rises to highly low position, front end aspect ratio lead-in wire warpage protuberance upper end above protuberance, make capillary along moving from first junction point to lead-in wire warpage protuberance direction, it is local to shear the cut-out lead-in wire by bight capillaceous, simultaneously, to go between towards the extruding of lead-in wire warpage protuberance by chamfered section in capillaceous, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area;
Cut off operation, promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing.
17. a lead connecting method connects with lead-in wire between first junction point and second junction point of semiconductor device, it is characterized in that, comprises following operation:
Protuberance forms operation, and it comprises: the warpage that will go between is stacked on second junction point, and the opposition side at first junction point forms lead-in wire warpage protuberance; By the planar portions swaged lead of capillary front end, formation ramped wedges on the first junction point side; After making that capillary rises to highly low position, front end aspect ratio lead-in wire warpage protuberance upper end above ramped wedges, make capillary along moving to lead-in wire warpage protuberance direction from ramped wedges, it is local to shear the cut-out lead-in wire by bight capillaceous, simultaneously, to go between towards the extruding of lead-in wire warpage protuberance by chamfered section in capillaceous, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area; Promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing;
Engage operation, make the lead-in wire looping from first junction point towards protuberance, the planar portions by the capillary front end will go between and push bonding wire above ramped wedges;
Lead-in wire crushing portion forms operation, after making that capillary rises to highly low position, front end aspect ratio lead-in wire warpage protuberance upper end above ramped wedges, make capillary along moving to lead-in wire warpage protuberance direction from ramped wedges, it is local to shear the cut-out lead-in wire by bight capillaceous, simultaneously, to go between towards the extruding of lead-in wire warpage protuberance by chamfered section in capillaceous, form the little lead-in wire crushing portion of sectional area ratio lead-in wire sectional area;
Cut off operation, promote lead-in wire, portion cuts off lead-in wire in the lead-in wire crushing.
18. the lead connecting method according to described in claim 16 or 17 is characterized in that:
It is parallel with the face of the semiconductor device that comprises second junction point to shear the face that cuts off, and lead-in wire crushing portion is the bow-shaped cross-section shape.
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