JP5002329B2 - Semiconductor device and wire bonding method - Google Patents

Semiconductor device and wire bonding method Download PDF

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Publication number
JP5002329B2
JP5002329B2 JP2007136106A JP2007136106A JP5002329B2 JP 5002329 B2 JP5002329 B2 JP 5002329B2 JP 2007136106 A JP2007136106 A JP 2007136106A JP 2007136106 A JP2007136106 A JP 2007136106A JP 5002329 B2 JP5002329 B2 JP 5002329B2
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Japan
Prior art keywords
wire
bump
capillary
bond point
semiconductor device
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JP2007136106A
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Japanese (ja)
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JP2008235849A5 (en
JP2008235849A (en
Inventor
竜成 三井
俊彦 富山
浩章 吉野
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Shinkawa Ltd
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Shinkawa Ltd
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Priority to JP2007136106A priority Critical patent/JP5002329B2/en
Priority to TW96133696A priority patent/TWI456672B/en
Priority to KR20070124204A priority patent/KR100932680B1/en
Priority to CN2008100055899A priority patent/CN101252112B/en
Priority to US12/070,000 priority patent/US7808116B2/en
Publication of JP2008235849A publication Critical patent/JP2008235849A/en
Publication of JP2008235849A5 publication Critical patent/JP2008235849A5/ja
Priority to US12/802,295 priority patent/US7910472B2/en
Application granted granted Critical
Publication of JP5002329B2 publication Critical patent/JP5002329B2/en
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Abstract

The invention relates to a semiconductor device and a wire bonding method. In the semiconductor device, a wire is stacked on a pad (3) as a second bonding point to form a bump (21) having a sloped wedge (22) and a first bent wire convex portion (21), and a wire (12) is looped from a lead as a first bonding point to the bump (21) and is pressed to the sloped wedge (22) of the bump (21) with a face portion (33) of a tip end of a capillary to bond the wire to the bump (21). At the same time, the wire (12) is pressed to the first bent wire convex portion (25) using an inner chamfer (31) of a bonding wire hole in the capillary to form a wire bent portion (20) having a bow-shaped cross section. The wire (12) is pulled up and cut at the wire bent portion (20). In the semiconductor device, improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality are provided.

Description

本発明は、半導体装置の構造及びワイヤボンディング方法に関する。   The present invention relates to a structure of a semiconductor device and a wire bonding method.

ICなどの半導体装置の組立工程には半導体のチップとリードフレームの間をワイヤで接続するワイヤボンディング工程がある。ワイヤボンディング工程は、ワイヤが挿通されたキャピラリを用い、トーチ電極からの放電によりキャピラリから突出したワイヤの先端にボールを形成し、キャピラリを半導体チップのパッド上に位置させ1次ボンディングを行った後、キャピラリをリードフレームのリード上に移動させ2次ボンディングを行うことにより、半導体チップとリードフレームとの間をワイヤによって接続する方法が一般的に用いられている(例えば、特許文献1参照)。   An assembly process for a semiconductor device such as an IC includes a wire bonding process for connecting a semiconductor chip and a lead frame with a wire. The wire bonding step uses a capillary through which a wire is inserted, forms a ball at the tip of the wire protruding from the capillary by discharge from the torch electrode, and after the primary bonding is performed by positioning the capillary on the pad of the semiconductor chip In general, a method of connecting the semiconductor chip and the lead frame with a wire by moving the capillary onto the lead of the lead frame and performing secondary bonding is generally used (see, for example, Patent Document 1).

この場合、ワイヤには金ワイヤが用いられることが多い。金は同じ材料の金との間の接合性には優れているが、銅、ニッケル、フラッシュ金メッキ等の材料との間では接合性が悪く、パッド或いはリードの材料が、例えば銅、ニッケル、フラッシュ金メッキ等のように金ワイヤと接合性の悪い材料であると、パッド或いはリード上に直接金ワイヤをボンディングすることができない。このため、パッド或いはリードの上に金ワイヤを用いてボールボンディングによるバンプを形成し、バンプ上に金ワイヤをボンディングする方法が用いられている。   In this case, a gold wire is often used as the wire. Gold is excellent in bondability with gold of the same material, but is poor in bondability with materials such as copper, nickel, flash gold plating, etc., and pad or lead material is, for example, copper, nickel, flash If the material is poorly bonded to the gold wire, such as gold plating, the gold wire cannot be bonded directly on the pad or lead. For this reason, a method of forming a bump by ball bonding using a gold wire on a pad or a lead and bonding the gold wire on the bump is used.

この方法によれば、金ワイヤを同じ材料の金によって形成されたバンプ上に接合するので、金ワイヤの接合性がよくなり、金との接合性の悪い材料によって形成されているパッド或いはリードとの間の接合性を向上させることができる。しかし、バンプ上面に金ワイヤのボンディングに十分な傾斜と平面がない場合には、接合面積不足による接合不良や、バンプと金ワイヤを接合した後に金ワイヤが下向きに変形してリードフレーム或いは半導体チップ2との間に接触が発生してしまうという問題があった。   According to this method, since the gold wire is bonded onto the bump formed of gold of the same material, the bondability of the gold wire is improved, and the pad or lead formed of the material having poor bondability with gold is used. It is possible to improve the bondability between the two. However, if the bump upper surface does not have a sufficient inclination and flat surface for bonding the gold wire, the bonding failure due to insufficient bonding area, or the gold wire deforms downward after bonding the bump and the gold wire, and the lead frame or semiconductor chip. There was a problem that contact occurred between the two.

そこで、特許文献1、2に記載されている従来技術では、バンプ上面に金ワイヤのボンディングに十分な傾斜と平面を形成するために、ボールボンディングの後にバンプ上面にキャピラリを押し付けて傾斜ウェッジを形成し、このバンプ上の傾斜ウェッジに金ワイヤをボンディングする方法が提案されている。   Therefore, in the prior art described in Patent Documents 1 and 2, a slant wedge is formed by pressing a capillary on the bump upper surface after ball bonding in order to form a sufficient tilt and flat surface for gold wire bonding on the bump upper surface. A method of bonding a gold wire to an inclined wedge on the bump has been proposed.

この方法は、例えば、図15(a)に示すように、半導体チップ2のパッド3の上に傾斜ウェッジ22の傾斜面の方向がリード4と反対側になるように第1段バンプ21aと第2段バンプ21bとからなるバンプ21を形成し、ワイヤ12の先端には、ワイヤ12を放電スパーク等によりボール5を形成する。そして、図15(b)に示すように、リード4上にボール5を押し付けて1次ボンディングを行って圧着ボール6を形成し、図15(c)に示すように、リード4からパッド3に向けてキャピラリ16を移動させてワイヤ12のルーピングを行い、ワイヤ12をバンプ21の傾斜ウェッジ22に押し付けて2次ボンディングを行った後、ワイヤ12を切断するワイヤボンディング方法がある。また、図16のようにリード4の上に傾斜面の方向が半導体チップ2と反対方向となるような傾斜ウェッジ22を持つバンプ21を形成し、半導体チップ2のパッド3に1次ボンディングを行い、圧着ボール6を形成した後、ワイヤ12をリード4に向かってルーピングしてバンプ21の傾斜ウェッジ22の上に2次ボンディングを行う方法がある。このような方法によると、ワイヤ12はバンプ21の傾斜ウェッジ22に沿って接合されるので、傾斜ウェッジ22の接合面積が広くなり、接合強度が向上すると共に、傾斜ウェッジ22によってワイヤ12がサポートされるので、ワイヤ12と半導体チップ或いはリードフレーム15との接触を防止することができる。   For example, as shown in FIG. 15A, the first bumps 21 a and the first bumps 21 a and the first bumps 21 are arranged on the pads 3 of the semiconductor chip 2 so that the inclined surface of the inclined wedge 22 is opposite to the leads 4. A bump 21 composed of a two-step bump 21b is formed, and a ball 5 is formed on the tip of the wire 12 by discharging spark or the like. Then, as shown in FIG. 15 (b), the ball 5 is pressed onto the lead 4 to perform primary bonding to form a press-bonded ball 6, and the lead 4 is connected to the pad 3 as shown in FIG. 15 (c). There is a wire bonding method in which the capillary 16 is moved to loop the wire 12, the wire 12 is pressed against the inclined wedge 22 of the bump 21 to perform secondary bonding, and then the wire 12 is cut. Further, as shown in FIG. 16, a bump 21 having an inclined wedge 22 is formed on the lead 4 so that the inclined surface is opposite to the semiconductor chip 2, and primary bonding is performed on the pad 3 of the semiconductor chip 2. There is a method in which after forming the press-bonded ball 6, the wire 12 is looped toward the lead 4 to perform secondary bonding on the inclined wedge 22 of the bump 21. According to such a method, since the wire 12 is bonded along the inclined wedge 22 of the bump 21, the bonding area of the inclined wedge 22 is increased, the bonding strength is improved, and the wire 12 is supported by the inclined wedge 22. Therefore, contact between the wire 12 and the semiconductor chip or the lead frame 15 can be prevented.

一方、ワイヤボンディング工程のワイヤ切断において、ワイヤ先端に曲がりが発生するという問題があった。このためボンディング後に接続ワイヤがS字状に曲がってしまい、隣り合う接続ワイヤ同士が接触するなどの不良が発生するという問題がある。この問題に対して、例えば、ワイヤを引き上げて切断する前に、キャピラリとクランパの位置を横に移動させて、細く形成されたワイヤ押し潰し部を真上に引き上げるようにして切断する方法(例えば、特許文献3参照)や、クランパを開としてテールワイヤを導出させた後に、キャピラリをテールワイヤの固有振動数で振動させることによってテールワイヤを共振させてワイヤを細く形成されたワイヤ押し潰し部で切断し、ワイヤ切断の際のワイヤ曲がりを防止する方法が提案されている(例えば、特許文献4参照)。   On the other hand, there has been a problem that bending of the wire tip occurs during wire cutting in the wire bonding process. For this reason, there is a problem that the connection wires are bent in an S shape after bonding, and defects such as contact between adjacent connection wires occur. In order to solve this problem, for example, before the wire is pulled up and cut, the position of the capillary and the clamper is moved laterally, and the wire crushing portion formed so as to be narrowed up is pulled up (for example, And a wire crushing portion formed by narrowing the wire by resonating the tail wire by vibrating the capillary at the natural frequency of the tail wire after the tail wire is led out by opening the clamper. A method of cutting and preventing wire bending during wire cutting has been proposed (see, for example, Patent Document 4).

特許第3570551号明細書Japanese Patent No. 3570551 特開2004−247672号公報JP 2004-247672 A 特許第2723277号明細書Japanese Patent No. 2723277 特許第2969953号明細書Japanese Patent No. 2969953

しかし、図17に示すように、パンプ21上の傾斜ウェッジ22にワイヤ12を接合することによって、ワイヤ12とバンプ21との接合面積が大きくなると、ワイヤ12とバンプ21との間のワイヤ押し潰し部20の断面形状が細くならない場合がある。このような場合には、特許文献3に記載されたような従来技術では、クランパ17でワイヤ12を把持してワイヤ12を引っ張り上げたときに、ワイヤ12に大きな張力がかかると共に引き伸ばされた状態となった後に太いワイヤ押し潰し部20でワイヤ12が切断されるため、引き伸ばされたワイヤ12が切断の時の反力で上に向かって跳ね上がり、S字状に曲がってしまう。ワイヤ12の曲がりは次のパッド3へのボンディングの際に放電などによるボール形成の不良や、キャピラリ16の内部及びキャピラリ16とクランパ17との間に残った曲がりワイヤによるボンディングのために、図18に示すように接続ワイヤ12がS字状に曲がってしまい、隣り合う接続ワイヤ12同士が接触するなどの不良が発生するという問題がある。   However, as shown in FIG. 17, when the bonding area of the wire 12 and the bump 21 is increased by bonding the wire 12 to the inclined wedge 22 on the pump 21, the wire crushing between the wire 12 and the bump 21 is performed. The cross-sectional shape of the part 20 may not become thin. In such a case, in the related art as described in Patent Document 3, when the wire 12 is gripped by the clamper 17 and pulled up, a large tension is applied to the wire 12 and the wire 12 is stretched. Then, since the wire 12 is cut by the thick wire crushing portion 20, the stretched wire 12 jumps upward by a reaction force at the time of cutting and bends in an S shape. The bending of the wire 12 is caused by defective ball formation due to discharge or the like during bonding to the next pad 3, or bonding by the bent wire remaining inside the capillary 16 or between the capillary 16 and the clamper 17 as shown in FIG. As shown in FIG. 2, there is a problem that the connection wire 12 is bent in an S shape and a defect such as contact between adjacent connection wires 12 occurs.

また、特許文献4に記載されたような従来技術では、太いワイヤ押し潰し部20を切断するために長時間の超音波振動の印加が必要になる上、ワイヤ12のキャピラリ16から接合点との間に延出されたテールワイヤ18の共振を利用するため短いテールワイヤには適用することができず、テールワイヤの短い高速ボンディング装置には対応することができないという問題があった。   In the prior art described in Patent Document 4, it is necessary to apply ultrasonic vibration for a long time in order to cut the thick wire crushing portion 20, and the connection between the capillary 16 of the wire 12 and the bonding point is required. Since the resonance of the tail wire 18 extending between them is used, the method cannot be applied to a short tail wire and cannot be applied to a high-speed bonding apparatus having a short tail wire.

このように、ワイヤとの接合性の悪い金属材料によって形成された半導体チップ2のパッド3或いはリードフレーム15のリード4との間をワイヤ12で接続する場合において、接合性の向上のために接合性の良い形状のバンプ21を形成することと、バンプ21に接合後のワイヤ12の切断性とは相反し、従来技術では、接合性を高めるとワイヤ12の切断性が悪くなり、ワイヤ12の曲がりが発生するという問題があった。   As described above, when the wire 12 is connected between the pad 3 of the semiconductor chip 2 or the lead 4 of the lead frame 15 formed of a metal material having poor bonding property to the wire, bonding is performed to improve the bonding property. The formation of the bump 21 having a good shape and the cutting ability of the wire 12 after bonding to the bump 21 are contrary to each other. In the conventional technique, if the bonding ability is improved, the cutting ability of the wire 12 is deteriorated. There was a problem that bending occurred.

そこで、本発明は、ワイヤとバンプとの間の接合性を向上させると共にワイヤの切断性を向上させてボンディング品質の向上を図ることを目的とする。   Therefore, an object of the present invention is to improve the bonding quality between the wire and the bump and improve the cutting property of the wire and improve the bonding quality.

発明の半導体装置は、第1ボンド点と第2ボンド点との間をワイヤで接続した半導体装置であって、第2ボンド点上にワイヤを折り曲げ積層して形成され、第1ボンド点と反対側にワイヤ折り曲げ凸部を含むバンプと、第1ボンド点側からバンプに延びてバンプ上面に接合され、ワイヤ折り曲げ凸部側にせん断切断面とワイヤ断面積よりも断面積が小さい引張切断面とを含むワイヤと、を有することを特徴とする。 The semiconductor device of the present invention is a semiconductor device in which a wire is connected between a first bond point and a second bond point, and is formed by bending and laminating a wire on the second bond point. A bump including a wire bent convex portion on the opposite side, a tensile cut surface extending from the first bond point side to the bump and bonded to the bump upper surface, and having a shear cut surface and a cross sectional area smaller than the wire cross sectional area on the wire bent convex portion side And a wire including.

本発明の半導体装置は、第1ボンド点と第2ボンド点との間をワイヤで接続した半導体装置であって、第2ボンド点上にワイヤを折り曲げ積層して形成され、第1ボンド点側と第1ボンド点と反対側とにワイヤ折り曲げ凸部を含むバンプと、第1ボンド点側からバンプに延びてバンプ上面に接合され、第1ボンド点と反対側のワイヤ折り曲げ凸部側にせん断切断面とワイヤ断面積よりも断面積が小さい引張切断面とを含むワイヤと、を有することを特徴とする。   The semiconductor device of the present invention is a semiconductor device in which a first bond point and a second bond point are connected by a wire, and is formed by bending and laminating a wire on the second bond point, and is on the first bond point side. And a bump including a wire bending convex portion on the opposite side to the first bond point, extending from the first bond point side to the bump and bonded to the upper surface of the bump, and shearing on the wire bending convex portion side opposite to the first bond point A wire including a cut surface and a tensile cut surface having a smaller cross-sectional area than the wire cross-sectional area.

また、本発明の半導体装置であって、バンプは、第1ボンド点側の上面にあって第1ボンド点から第2ボンド点に向かう方向に沿って高さが低くなる傾斜面を含む傾斜ウェッジを含み、ワイヤは、傾斜ウェッジに沿ってバンプ上面に接合されていること、としても好適であるし、バンプは、第1ボンド点側のワイヤ折り曲げ凸部に隣接してその上面に設けられ第1ボンド点から第2ボンド点に向かう方向に沿って高さが低くなる傾斜面を含む傾斜ウェッジを含み、ワイヤは、傾斜ウェッジに沿ってバンプ上面に接合されていること、
としても好適であるし、せん断切断面は第2ボンド点を含む半導体装置の面に略平行で、引張切断面は弓形断面形状であること、としても好適である。
Further, in the semiconductor device of the present invention, the bump is an inclined wedge including an inclined surface which is on the upper surface on the first bond point side and whose height decreases along the direction from the first bond point to the second bond point. The wire is bonded to the upper surface of the bump along the inclined wedge, and the bump is provided on the upper surface adjacent to the wire bending convex portion on the first bond point side. Including an inclined wedge including an inclined surface whose height decreases along the direction from the first bond point to the second bond point, and the wire is bonded to the bump upper surface along the inclined wedge;
Also to be suitable as a shear cut surface substantially parallel to the surface of a semiconductor device including a second bonding point, tensile cut surface that is arcuate cross-sectional shape, also Ru suitable der as.

発明のワイヤボンディング方法は、半導体装置の第1ボンド点と第2ボンド点との間をワイヤで接続するワイヤボンディング方法であって、第2ボンド点上にワイヤを折り曲げ積層し、第1ボンド点と反対側にワイヤ折り曲げ凸部を含むバンプを形成するバンプ形成工程と、第1ボンド点からバンプに向かってワイヤをルーピングし、キャピラリ先端のフェイス部によってワイヤをバンプ上面に押し付けてワイヤを接合するボンディング工程と、バンプ上面から先端高さがワイヤ折り曲げ凸部上端高さよりも低い位置までキャピラリを上昇させた後、キャピラリを第1ボンド点からワイヤ折り曲げ凸部に向かう方向に移動させ、キャピラリの角部によってワイヤの一部をせん断切断すると共に、キャピラリのインナチャンファ部によってワイヤをワイヤ折り曲げ凸部に押し付けてワイヤ断面積よりも断面積が小さいワイヤ押し潰し部を形成するワイヤ押し潰し部形成工程と、ワイヤを引き上げてワイヤ押し潰し部においてワイヤを切断するワイヤ切断工程と、を有することを特徴とする。 The wire bonding method of the present invention is a wire bonding method in which a first bond point and a second bond point of a semiconductor device are connected by a wire, and the wire is bent and laminated on the second bond point. A bump forming process for forming a bump including a wire bending convex part on the opposite side of the point, a loop of the wire from the first bond point toward the bump, and the wire is pressed against the upper surface of the bump by the face part at the tip of the capillary to join the wire A bonding step, and after raising the capillary from the upper surface of the bump to a position where the tip height is lower than the upper end height of the wire bending convex portion, the capillary is moved in a direction from the first bond point toward the wire bending convex portion, A part of the wire is sheared and cut by the corner, and the wire is cut by the inner chamfer of the capillary. A wire crushing portion forming step of forming a wire crushing portion having a cross-sectional area smaller than the wire cross-sectional area by pressing the wire against the wire bending convex portion; and a wire cutting step of lifting the wire and cutting the wire at the wire crushing portion; It is characterized by having.

本発明のワイヤボンディング方法は、半導体装置の第1ボンド点と第2ボンド点との間をワイヤで接続するワイヤボンディング方法であって、第2ボンド点上にワイヤを折り曲げ積層して第1ボンド点と反対側にワイヤ折り曲げ凸部を形成し、キャピラリ先端のフェイス部によってワイヤを押し付けて第1ボンド点側の上面に傾斜ウェッジを形成し、傾斜ウェッジ上面から先端高さがワイヤ折り曲げ凸部上端高さよりも低い位置までキャピラリを上昇させた後、キャピラリを傾斜ウェッジからワイヤ折り曲げ凸部に向かう方向に移動させ、キャピラリの角部によってワイヤの一部をせん断切断すると共に、キャピラリのインナチャンファ部によってワイヤをワイヤ折り曲げ凸部に押し付けてワイヤ断面積よりも断面積が小さいワイヤ押し潰し部を形成し、ワイヤを引き上げてワイヤ押し潰し部においてワイヤを切断するバンプ形成工程と、第1ボンド点からバンプに向かってワイヤをルーピングし、キャピラリ先端のフェイス部によってワイヤを傾斜ウェッジ上面に押し付けてワイヤを接合するボンディング工程と、傾斜ウェッジ上面から先端高さがワイヤ折り曲げ凸部上端高さよりも低い位置までキャピラリを上昇させた後、キャピラリを傾斜ウェッジからワイヤ折り曲げ凸部に向かう方向に移動させ、キャピラリの角部によってワイヤの一部をせん断切断すると共に、キャピラリのインナチャンファ部によってワイヤをワイヤ折り曲げ凸部に押し付けてワイヤ断面積よりも断面積が小さいワイヤ押し潰し部を形成するワイヤ押し潰し部形成工程と、ワイヤを引き上げてワイヤ押し潰し部においてワイヤを切断するワイヤ切断工程と、を有することを特徴とする。   The wire bonding method of the present invention is a wire bonding method in which a first bond point and a second bond point of a semiconductor device are connected by a wire, and the first bond is formed by bending and laminating the wire on the second bond point. A wire bending convex part is formed on the opposite side of the point, the wire is pressed by the face part of the capillary tip to form an inclined wedge on the upper surface on the first bond point side, and the tip height is the upper end of the wire bending convex part from the upper surface of the inclined wedge After raising the capillary to a position lower than the height, the capillary is moved in the direction from the inclined wedge toward the wire bending convex part, and a part of the wire is sheared by the corner of the capillary, and the inner chamfer part of the capillary Wire crushing with a smaller cross-sectional area than the wire cross-sectional area by pressing the wire against the wire bending projection A bump forming step of pulling up the wire and cutting the wire at the wire crushing portion, looping the wire from the first bond point toward the bump, and pressing the wire against the upper surface of the inclined wedge by the face portion of the capillary tip A bonding step for bonding the wire, and after raising the capillary to a position where the tip height is lower than the upper end height of the wire bending convex portion from the upper surface of the inclined wedge, the capillary is moved in a direction from the inclined wedge toward the wire bending convex portion, A wire crushing portion that shears and cuts a part of the wire by the corner of the capillary and presses the wire against the wire bending convex portion by the inner chamfer portion of the capillary to form a wire crushing portion having a smaller cross-sectional area than the wire cross-sectional area Forming process and pulling the wire And having a wire cutting step of cutting the wire at the crushed part.

また、本発明のワイヤボンディング方法であって、せん断切断された面は第2ボンド点を含む半導体装置の面に略平行で、ワイヤ押し潰し部は、弓形断面形状であること、としても好適である。   In the wire bonding method of the present invention, it is also preferable that the shear-cut surface is substantially parallel to the surface of the semiconductor device including the second bond point, and the wire crushing portion has an arcuate cross-sectional shape. is there.

本発明は、ワイヤとバンプとの間の接合性を向上させると共にワイヤの切断性を向上させてボンディング品質の向上を図ることができるという効果を奏する。   The present invention has an effect that the bonding quality between the wire and the bump can be improved and the cutting property of the wire can be improved to improve the bonding quality.

以下、本発明の好適な実施形態について、図面を参照しながら説明する。   Preferred embodiments of the present invention will be described below with reference to the drawings.

本発明の実施形態について説明する前に、本発明の参考例について説明する。図1に示すように、本発明の参考例の半導体装置14は、リード4が設けられたリードフレーム15と、リードフレーム15の上にダイボンディングによって取り付けられた半導体チップ2と、半導体チップ2上に形成されたパッド3の上に形成されたバンプ21と、リード4とバンプ21とを接続するワイヤ12を備えている。ワイヤ12は、リード4の上にボンディングによって形成した圧着ボール6からバンプ21に向かってルーピングされて接合されている。ワイヤ12は金ワイヤであり、パッド3、リード4は銅、ニッケル、フラッシュ金メッキ等の金との接合性が悪い材料によって構成されている。 Before describing an embodiment of the present invention, a reference example of the present invention will be described. As shown in FIG. 1, a semiconductor device 14 according to a reference example of the present invention includes a lead frame 15 provided with leads 4, a semiconductor chip 2 attached to the lead frame 15 by die bonding, and the semiconductor chip 2. The bumps 21 formed on the pads 3 formed on the wires 3 and the wires 12 connecting the leads 4 and the bumps 21 are provided. The wire 12 is looped and bonded to the bump 21 from the press-bonded ball 6 formed on the lead 4 by bonding. The wire 12 is a gold wire, and the pad 3 and the lead 4 are made of a material having poor bondability with gold, such as copper, nickel, and flash gold plating.

図2に示すように、パッド3の上に形成されたバンプ21は、パッド3面から順に、圧着ボール6とその上に押し付けられたバンプワイヤ21a’によって構成される第1段バンプ21aと、リード4とは反対方向に形成された第1ワイヤ折り曲げ凸部25と、第1段バンプの上からワイヤ12を押し付けて形成された第2段バンプ21bと、リード4の側に形成された第2ワイヤ折り曲げ凸部27と、バンプ上面の傾斜ウェッジ22と、ワイヤ12を折り曲げてバンプ21を形成する際にワイヤ12を切断したワイヤ切断面29とを備え、ワイヤ12を折り曲げ積層した構成となっている。ワイヤ12は、第1ボンド点であるリード4の上に1次ボンディングを行って圧着ボール6を形成した後、バンプ21に向かってルーピングし、第2ボンド点であるパッド3に形成されたバンプ21の上面にある傾斜ウェッジ22に接合されており、バンプ21のリード4とは反対方向に形成された第1ワイヤ折り曲げ凸部25の側にワイヤ切断面19を備えている。   As shown in FIG. 2, the bump 21 formed on the pad 3 includes, in order from the surface of the pad 3, the first-stage bump 21a composed of the press-bonded ball 6 and the bump wire 21a ′ pressed thereon, 4, the first wire bending convex portion 25 formed in the opposite direction to the wire 4, the second step bump 21 b formed by pressing the wire 12 from above the first step bump, and the second step formed on the lead 4 side. The wire bending convex portion 27, the inclined wedge 22 on the upper surface of the bump, and the wire cutting surface 29 obtained by cutting the wire 12 when the wire 12 is bent to form the bump 21, and the wire 12 is bent and laminated. Yes. The wire 12 is subjected to primary bonding on the lead 4 that is the first bond point to form the press-bonded ball 6, and then looped toward the bump 21 to form the bump formed on the pad 3 that is the second bond point. A wire cutting surface 19 is provided on the side of the first wire bending convex portion 25 which is joined to the inclined wedge 22 on the upper surface of the bump 21 and formed in the direction opposite to the lead 4 of the bump 21.

バンプ21の上面は中央が凹部となって、ワイヤ12の接続方向に沿って両側にある第1、第2ワイヤ折り曲げ凸部25,27は上方向に凸の形状となっている。傾斜ウェッジ22は、中央の凹部から第1ボンド点であるリード4側にある第2ワイヤ折り曲げ凸部27に向かって形成された傾斜した平面である。このように、傾斜ウェッジ22の傾斜は第1ボンド点であるリード4の側の高さが高く、第1ボンド点から第2ボンド点のパッド3側に向かう方向に沿って高さが低くなるような傾斜となっている。ワイヤ12は、この傾斜ウェッジ22の面に沿って接合されている。   The center of the upper surface of the bump 21 is a concave portion, and the first and second wire bending convex portions 25 and 27 on both sides along the connecting direction of the wire 12 are convex upward. The inclined wedge 22 is an inclined plane formed from the central concave portion toward the second wire bending convex portion 27 on the lead 4 side which is the first bond point. As described above, the inclination of the inclined wedge 22 is high on the side of the lead 4 that is the first bond point, and is low along the direction from the first bond point toward the pad 3 side of the second bond point. It has a slope like this. The wire 12 is bonded along the surface of the inclined wedge 22.

バンプ21の上面は、中央の凹部から第1ボンド点であるリード4の反対側にある第1ワイヤ折り曲げ凸部25に向かって高くなるような斜面を備えている。この第1ワイヤ折り曲げ凸部25に沿ってバンプ形成の際のワイヤ切断面29とワイヤボンディングの際のワイヤ切断面19が位置している。   The upper surface of the bump 21 has a slope that becomes higher from the central concave portion toward the first wire bending convex portion 25 on the opposite side of the lead 4 as the first bond point. Along the first wire bending convex portion 25, a wire cutting surface 29 for bump formation and a wire cutting surface 19 for wire bonding are located.

図3はバンプ21に接合されたワイヤ12との平面図である。図3に示すように、バンプ21の第1ワイヤ折り曲げ凸部25は第1ボンド点であるリード4と反対方向に張り出し、第2ワイヤ折り曲げ凸部27は第1ボンド点であるリード4の方向に張り出している。図1と図2とからわかる様に、第1ワイヤ折り曲げ凸部25は、バンプ21の上面に向かう略半円球状の突起形状であり、第2ワイヤ折り曲げ凸部27は、第1ボンド点であるリード4の側がバンプ21の上面に向かう部分円球状の突起形状で、反対側が傾斜ウェッジ22の傾斜面となっている。   FIG. 3 is a plan view of the wire 12 bonded to the bump 21. As shown in FIG. 3, the first wire bending convex portion 25 of the bump 21 projects in a direction opposite to the lead 4 that is the first bond point, and the second wire bending convex portion 27 is the direction of the lead 4 that is the first bond point. Overhangs. As can be seen from FIG. 1 and FIG. 2, the first wire bending convex portion 25 has a substantially semi-spherical protrusion shape toward the upper surface of the bump 21, and the second wire bending convex portion 27 is at the first bond point. A certain lead 4 side has a partially spherical projection shape toward the upper surface of the bump 21, and the opposite side is an inclined surface of the inclined wedge 22.

各ワイヤ切断面19,29は弓形形状の断面となっている。バンプ形成の際のワイヤ12のワイヤ切断面29は、ワイヤボンディングの際のワイヤ12のワイヤ切断面19と第1ワイヤ折り曲げ凸部25との間にあっても良いし、ワイヤ切断面19の下側にあって、ワイヤ切断面19と第2バンプ21bとの間にあってもよい。   Each wire cutting surface 19, 29 has an arcuate cross section. The wire cutting surface 29 of the wire 12 at the time of bump formation may be between the wire cutting surface 19 of the wire 12 at the time of wire bonding and the first wire bending convex portion 25, or below the wire cutting surface 19. Therefore, it may be between the wire cut surface 19 and the second bump 21b.

バンプ21の形成動作を説明する前に、キャピラリ16の構成について説明する。図4に示すように、キャピラリ16は、インナチャンファ部31と、フェイス部33と、アウタラディウス部35と、ストレート孔37とを有しており、セラミックス等の硬質材料によって構成されている。フェイス部33はキャピラリ16の先端面に設けられ、パッド3に対して微小角度を持った平面であり、その平面で、ワイヤ12の先端に形成されたボール5や折り曲げたワイヤ12を半導体チップ2のパッド3に向かって圧着する。ストレート孔37はキャピラリ16の中心に設けられたワイヤ12の外径よりも若干内径が大きい貫通孔で、ワイヤ12が挿通されている。インナチャンファ部31はストレート孔37とフェイス部33との間に設けられたテーパー孔で、フェイス部33に向かって広がっている。インナチャンファ部31は、ボンディングにおいてボール5をパッド3に向かって押し付けると共に、ボールを直径方向に圧縮して圧着ボール6を形成する。また、インナチャンファ部31は、フェイス部33との間に角部32を有している。フェイス部33はパッド3に対して微小角度を持っていることから、キャピラリ16のフェイス部33をワイヤ12に押し付けた際に、インナチャンファ部31とフェイス部33との間の角部32はワイヤ12に食い込むように構成されている。   Before describing the operation of forming the bumps 21, the configuration of the capillary 16 will be described. As shown in FIG. 4, the capillary 16 has an inner chamfer part 31, a face part 33, an outer radius part 35, and a straight hole 37, and is made of a hard material such as ceramics. The face portion 33 is provided on the front end surface of the capillary 16 and is a flat surface having a minute angle with respect to the pad 3. Crimp toward the pad 3. The straight hole 37 is a through-hole having a slightly larger inner diameter than the outer diameter of the wire 12 provided in the center of the capillary 16, and the wire 12 is inserted therethrough. The inner chamfer part 31 is a tapered hole provided between the straight hole 37 and the face part 33 and extends toward the face part 33. The inner chamfer portion 31 presses the ball 5 toward the pad 3 in bonding and compresses the ball in the diameter direction to form the press-bonded ball 6. The inner chamfer 31 has a corner 32 between the face 33 and the inner chamfer 31. Since the face portion 33 has a minute angle with respect to the pad 3, when the face portion 33 of the capillary 16 is pressed against the wire 12, the corner portion 32 between the inner chamfer portion 31 and the face portion 33 is a wire. 12 is configured to bite in.

図4を参照しながら、参考例の半導体装置14の半導体チップ2のパッド3にバンプ21を形成する工程について説明する。バンプ21はワイヤ12の挿通されたボンディングツールであるキャピラリ16を図示しないワイヤボンディング装置によって上下左右に動作させることによって形成する。 With reference to FIG. 4, the process of forming the bump 21 on the pad 3 of the semiconductor chip 2 of the semiconductor device 14 of the reference example will be described. The bump 21 is formed by moving the capillary 16 which is a bonding tool through which the wire 12 is inserted, up and down and left and right by a wire bonding apparatus (not shown).

図4(a)に示すように、キャピラリ16はワイヤ12の先端に形成したボールをパッド3に押し付けて圧着ボール6を形成した後、上昇すると共に、第1ボンド点であるリード4と反対方向である図中の右方向に向かって移動する。キャピラリ16が横方向に移動すると、ワイヤ12は圧着ボール6によってパッド3に接合されていることから、キャピラリ16のインナチャンファ部31がワイヤ12の外面に当たり、ワイヤ12はキャピラリ16の横移動方向に向かって曲がり変形を生じる。そして、キャピラリ16は、フェイス部33と圧着ボール6との間にワイヤ12が入るようにリード4側フェイス部33が圧着ボール6の中心にかかる位置まで横方向に移動する。   As shown in FIG. 4A, the capillary 16 presses the ball formed at the tip of the wire 12 against the pad 3 to form the press-bonded ball 6, and then rises and is opposite to the lead 4 as the first bond point. It moves toward the right direction in the figure. When the capillary 16 moves in the lateral direction, the wire 12 is joined to the pad 3 by the press-bonded ball 6, so that the inner chamfer portion 31 of the capillary 16 hits the outer surface of the wire 12, and the wire 12 moves in the lateral movement direction of the capillary 16. Bending towards and causing deformation. The capillary 16 moves laterally to a position where the lead 4 side face portion 33 is centered on the press-bonded ball 6 so that the wire 12 is inserted between the face portion 33 and the press-bonded ball 6.

図4(b)に示すように、キャピラリ16は下動して、リード4側フェイス部33によってリード4側のフェイス部33と圧着ボール6との間に入っているワイヤ12をパッド3面に向かって押し付ける。ワイヤ12は圧着ボール6に押し付けられて扁平形状に形成されバンプワイヤ21a’となる。圧着ボール6と扁平形状に形成されたバンプワイヤ21a’とによって第1段バンプ21aが形成される。また、キャピラリ16に挿通されたワイヤ12と第1段バンプ21aとはバンプ21のリード4の反対側で連続し、このワイヤ12の連続部分はキャピラリ16のインナチャンファ部31によって下側に押し付けられていることから、インナチャンファ部31のテーパー形状に沿ってワイヤ12が成形される。これによって、ワイヤ12は、キャピラリ16のストレート孔37とワイヤ12とのクリアランス分だけリード4と反対側に向かって上方向に傾斜してストレート孔37にガイドされるような形状となる。   As shown in FIG. 4B, the capillary 16 moves downward, and the lead 12 side face portion 33 causes the wire 12 between the face portion 33 on the lead 4 side and the press-bonded ball 6 to be placed on the surface of the pad 3. Press toward it. The wire 12 is pressed against the press-bonded ball 6 to form a flat shape and becomes a bump wire 21a '. A first bump 21a is formed by the press-bonded ball 6 and the bump wire 21a 'formed in a flat shape. Further, the wire 12 inserted into the capillary 16 and the first step bump 21 a are continuous on the opposite side of the lead 4 of the bump 21, and the continuous portion of the wire 12 is pressed downward by the inner chamfer portion 31 of the capillary 16. Therefore, the wire 12 is formed along the tapered shape of the inner chamfer portion 31. Thus, the wire 12 is shaped to be guided in the straight hole 37 while being inclined upward toward the opposite side of the lead 4 by the clearance between the straight hole 37 of the capillary 16 and the wire 12.

図4(c)に示すように、キャピラリ16は第1段バンプ21aを形成した後、上昇し、先の横方向動作と反対方向のリード4側に向かって移動する。キャピラリ16の横移動によってキャピラリ16のインナチャンファ部31がワイヤ12の外面に当たる。第1段バンプ21aが形成された状態では、ワイヤ12はリード4と反対側に向かって傾斜していることから、フェイス部33と第1段バンプ21aとの間のワイヤ12は、キャピラリ16の横移動によって、リード4の反対側からリード4側に向かって折り曲げられ、第1ワイヤ折り曲げ凸部25が形成される。そして、キャピラリ16はリード4反対側のフェイス部33が第1段バンプ21aの略中央位置に来るまでリード4側に向かって横移動する。   As shown in FIG. 4C, the capillary 16 moves up after forming the first step bump 21a, and moves toward the lead 4 in the direction opposite to the previous lateral operation. The inner chamfer 31 of the capillary 16 hits the outer surface of the wire 12 by the lateral movement of the capillary 16. In the state where the first step bump 21a is formed, the wire 12 is inclined toward the side opposite to the lead 4, and therefore the wire 12 between the face portion 33 and the first step bump 21a is connected to the capillary 16. By lateral movement, the lead wire 4 is bent from the opposite side of the lead 4 toward the lead 4 side, and the first wire bending convex portion 25 is formed. The capillary 16 moves laterally toward the lead 4 until the face portion 33 on the opposite side of the lead 4 comes to the approximate center position of the first step bump 21a.

図4(d)に示すように、キャピラリ16の横移動後、キャピラリ16は下動して、リード4の反対側のフェイス部33によってフェイス部33と第1段バンプ21aとの間に入っているワイヤ12をパッド3に向かって押し付ける。ワイヤ12は第1段バンプ21aに押し付けられて扁平形状に形成されると共に第1段バンプ21aに圧着されて第2段バンプ21bが形成される。第1ワイヤ折り曲げ凸部25はキャピラリ16のフェイス部33からはずれているので、キャピラリ16の下動によってパッド3の方向に押し付けられず、第2段バンプ21bのリード4と反対側で上方向に凸の略半円球状形状となる。また、第1ワイヤ折り曲げ凸部25はキャピラリ16の下動による第2段バンプ21bの形成によって略180度折り曲げられる。このため、第1ワイヤ折り曲げ凸部25は曲げによる加工硬化によって他の部分よりも硬度が高くなる。また、キャピラリ16に挿通されたワイヤ12と第2段バンプ21bとはバンプ21のリード4側で連続し、このワイヤ12の連続部分はキャピラリ16のインナチャンファ部31によって下側に押し付けられていることから、インナチャンファ部31のテーパー形状に沿ってワイヤ12が形成される。これによって、ワイヤ12は、キャピラリ16のストレート孔37とワイヤ12とのクリアランス分だけリード4側に向かって上方向に傾斜してストレート孔37にガイドされるような形状となる。   As shown in FIG. 4D, after the capillary 16 moves laterally, the capillary 16 moves downward and enters between the face portion 33 and the first step bump 21a by the face portion 33 on the opposite side of the lead 4. The wire 12 is pressed toward the pad 3. The wire 12 is pressed against the first step bump 21a to form a flat shape, and the wire 12 is pressed against the first step bump 21a to form a second step bump 21b. Since the first wire bending convex part 25 is displaced from the face part 33 of the capillary 16, it is not pressed in the direction of the pad 3 by the downward movement of the capillary 16, and upward on the opposite side of the lead 4 of the second step bump 21 b. Convex semi-spherical shape. Further, the first wire bending convex portion 25 is bent approximately 180 degrees by the formation of the second step bump 21b by the downward movement of the capillary 16. For this reason, the 1st wire bending convex part 25 becomes higher hardness than another part by the work hardening by bending. Further, the wire 12 inserted into the capillary 16 and the second bump 21 b are continuous on the lead 4 side of the bump 21, and the continuous portion of the wire 12 is pressed downward by the inner chamfer portion 31 of the capillary 16. Accordingly, the wire 12 is formed along the tapered shape of the inner chamfer portion 31. As a result, the wire 12 is shaped to be guided toward the straight hole 37 while being inclined upward toward the lead 4 by the clearance between the straight hole 37 of the capillary 16 and the wire 12.

図4(e)に示すように、第2段バンプ21bと第1ワイヤ折り曲げ凸部25の形成後、キャピラリは上昇し、先の横方向動作と反対方向のリード4の反対側に向かって移動する。キャピラリ16の横移動によってキャピラリ16のインナチャンファ部31がワイヤ12の外面に当たる。第2段バンプ21bが形成された状態では、ワイヤ12はリード4側に向かって傾斜していることから、フェイス部33と第2段バンプ21bとの間のワイヤ12は、キャピラリ16の横移動によって、リード4側からリード4の反対側に向かって折り曲げられ、第2ワイヤ折り曲げ凸部27が形成される。そして、キャピラリ16はストレート孔37の中心位置が略第1折曲げ凸部25の中心位置となる位置に移動する。キャピラリ16の中心がストレート孔37の中心位置に移動すると、第2ワイヤ折り曲げ凸部27はキャピラリ16のフェイス部33からはずれ、その一部はアウタラディウス部35よりもリード4側となる。   As shown in FIG. 4E, after the formation of the second bump 21b and the first wire bending convex portion 25, the capillary is raised and moved toward the opposite side of the lead 4 in the direction opposite to the previous lateral movement. To do. The inner chamfer 31 of the capillary 16 hits the outer surface of the wire 12 by the lateral movement of the capillary 16. Since the wire 12 is inclined toward the lead 4 side in the state where the second step bump 21b is formed, the wire 12 between the face portion 33 and the second step bump 21b moves laterally of the capillary 16. Thus, the second wire bending convex portion 27 is formed by bending from the lead 4 side toward the opposite side of the lead 4. Then, the capillary 16 moves to a position where the center position of the straight hole 37 is substantially the center position of the first bent convex portion 25. When the center of the capillary 16 moves to the center position of the straight hole 37, the second wire bending convex part 27 is detached from the face part 33 of the capillary 16, and a part thereof is closer to the lead 4 than the outer radius part 35.

図4(f)に示すように、キャピラリ16の横移動後、キャピラリ16は略半円球状の第1ワイヤ折り曲げ凸部25がストレート孔37の中に入り込むように下動し、リード4側のフェイス部33によってフェイス部33と第2段バンプ21bとの間に入っているワイヤ12をパッド3に向かって押し付ける。ワイヤ12は第2段バンプ21bに押し付けられて扁平形状に形成されると共に第2段バンプ21bに圧着されて第3段バンプ21cが形成される。キャピラリ16に挿通されたワイヤ12と第3段バンプ21cとはバンプ21のリード4の反対側で連続し、このワイヤ12の連続部分はキャピラリ16のインナチャンファ部31によってパッド3側の第1ワイヤ折り曲げ凸部25に押し付けられる。第1ワイヤ折り曲げ凸部25は、先の工程で曲げ加工の加工硬化によって他の部分よりも硬くなっているので、硬質材料によって構成されたキャピラリ16のインナチャンファ部31との間に挟みこんだワイヤ12を圧縮変形させることができる。このため、キャピラリ16の下動によってインナチャンファ部31は第1ワイヤ折り曲げ凸部25との間に挟み込んだワイヤ12を圧縮し、インナチャンファ部31の角部32はワイヤ12に食い込んで、ワイヤ12の接合部分の断面積がワイヤ12の断面積より小さくなっている弓形形状断面を持つワイヤ押し潰し部30を形成する。   As shown in FIG. 4 (f), after the capillary 16 moves laterally, the capillary 16 moves downward so that the first semi-spherical first wire bending projection 25 enters the straight hole 37, The wire 12 interposed between the face portion 33 and the second step bump 21 b is pressed toward the pad 3 by the face portion 33. The wire 12 is pressed against the second step bump 21b to form a flat shape, and is crimped to the second step bump 21b to form a third step bump 21c. The wire 12 inserted through the capillary 16 and the third bump 21 c are continuous on the opposite side of the lead 4 of the bump 21, and the continuous portion of this wire 12 is the first wire on the pad 3 side by the inner chamfer portion 31 of the capillary 16. It is pressed against the bent convex part 25. Since the first wire bending convex part 25 is harder than the other part by the work hardening of the bending process in the previous step, it is sandwiched between the inner chamfer part 31 of the capillary 16 made of a hard material. The wire 12 can be compressed and deformed. For this reason, the inner chamfer part 31 compresses the wire 12 sandwiched between the first wire bending convex part 25 by the downward movement of the capillary 16, and the corner part 32 of the inner chamfer part 31 bites into the wire 12. The wire crushing portion 30 having an arcuate cross section in which the cross-sectional area of the joint portion is smaller than the cross-sectional area of the wire 12 is formed.

図5(c)に示すように、ワイヤ12は円形テーパー形状のインナチャンファ部31と略半円球状の第1ワイヤ折り曲げ凸部25とに挟まれて圧縮成形され、第1ワイヤ折り曲げ凸部25の外面に沿った弓形形状のワイヤ押し潰し部30が形成される。ワイヤ押し潰し部30は第1ワイヤ折り曲げ凸部25のリード4側に位置している。そして、図5(a)に示すように、成形された後のワイヤ12は、キャピラリ16のストレート孔37とワイヤ12とのクリアランス分だけリード4の反対側に向かって傾斜してストレート孔37にガイドされて上方向に延びるような形状となる。   As shown in FIG. 5C, the wire 12 is compression-molded by being sandwiched between a circular tapered inner chamfer portion 31 and a substantially semi-spherical first wire bending convex portion 25, and the first wire bending convex portion 25. An arcuate wire crushing portion 30 is formed along the outer surface. The wire crushing portion 30 is located on the lead 4 side of the first wire bending convex portion 25. As shown in FIG. 5A, the wire 12 after being formed is inclined toward the opposite side of the lead 4 by the clearance between the straight hole 37 of the capillary 16 and the wire 12, and becomes the straight hole 37. The shape is such that it is guided and extends upward.

先のキャピラリ16の移動によって、第2ワイヤ折り曲げ凸部27はキャピラリ16のフェイス部33からはずれているので、キャピラリ16の下動によって第2段バンプ21bの方向に押し付けられず、第3段バンプ21cのリード4側でフェイス部33によって押し付けられた部分よりも高くなった部分円球形の凸形状となる。また、第2ワイヤ折り曲げ凸部27はキャピラリ16の下動による第3段バンプ21cの形成によって略180度折り曲げられるので、第2ワイヤ折り曲げ凸部27は曲げによる加工硬化によって他の部分よりも硬度が高くなる。上に凸の形状となった第2ワイヤ折り曲げ凸部27とインナチャンファ部31の角部32がワイヤに押し付けられた部分との間には、リード4側からリード4の反対側に向かって低くなるように傾斜した面である傾斜ウェッジ22が形成される。傾斜ウェッジ22の面の形状は、フェイス部33とアウタラディウス部35とに略沿った形状となっている。   Since the second wire folding projection 27 is displaced from the face portion 33 of the capillary 16 due to the movement of the capillary 16, the third step bump is not pressed against the second step bump 21b by the downward movement of the capillary 16. It becomes a partially spherical convex shape that is higher than the portion pressed by the face portion 33 on the lead 4 side of 21c. Further, since the second wire bending convex portion 27 is bent approximately 180 degrees by the formation of the third step bump 21c by the downward movement of the capillary 16, the second wire bending convex portion 27 is harder than other portions by work hardening by bending. Becomes higher. Between the second wire bending convex portion 27 having a convex shape and the portion where the corner portion 32 of the inner chamfer portion 31 is pressed against the wire, the height decreases from the lead 4 side toward the opposite side of the lead 4. An inclined wedge 22 that is an inclined surface is formed. The shape of the surface of the inclined wedge 22 is a shape substantially along the face portion 33 and the outer radius portion 35.

図4(g)に示すように、第3段バンプ21cの形成が終了したら、キャピラリ16は上昇する。この際、図示しないクランパは開放状態にあるので、キャピラリ16の上昇によってキャピラリ16の下にテールワイヤ18が延出される。   As shown in FIG. 4G, when the formation of the third step bump 21c is completed, the capillary 16 is raised. At this time, since the clamper (not shown) is in an open state, the tail wire 18 is extended under the capillary 16 by raising the capillary 16.

図4(h)に示すように、テールワイヤ18の長さが次のボールを形成するのに必要な長さになるまでキャピラリ16が上昇すると、図示しないクランパが閉となってワイヤ12を把持してキャピラリ16の上昇にと共に上昇する。するとクランパによってワイヤ12が上に向かって引き上げられ、ワイヤ12に張力が掛かる。先の第3段バンプの形成において、断面積がワイヤ12の断面積よりも小さくなっているワイヤ押し潰し部30が形成されているので、ワイヤ12にかかった張力によってワイヤ押し潰し部30には大きな引張り応力が発生する。そして、この引っ張り応力によって、ワイヤ押し潰し部30のところでワイヤ12が切断されてワイヤ切断面29が形成される。ワイヤ押し潰し部30の面積が小さくなるように形成されているので、ワイヤ12の切断の際にワイヤ12全体にかかる引っ張り力は小さくて済み、ワイヤ12が切断された際に、その張力の反発によってワイヤ12に曲がりが発生することを低減することができる。ワイヤ12が切断されると、第1ワイヤ折り曲げ凸部25と傾斜ウェッジ22を備える多段折り曲げ積層したバンプ21の形成工程は終了する。   As shown in FIG. 4 (h), when the capillary 16 is raised until the length of the tail wire 18 reaches a length necessary for forming the next ball, a clamper (not shown) is closed and the wire 12 is gripped. As the capillary 16 rises, it rises. Then, the wire 12 is pulled upward by the clamper, and tension is applied to the wire 12. In the formation of the third step bump, the wire crushing portion 30 having a cross-sectional area smaller than the cross-sectional area of the wire 12 is formed, so that the wire crushing portion 30 has a tension applied to the wire 12. A large tensile stress is generated. Then, due to the tensile stress, the wire 12 is cut at the wire crushing portion 30 to form the wire cut surface 29. Since the area of the wire crushing portion 30 is formed to be small, the pulling force applied to the entire wire 12 is small when the wire 12 is cut, and the tension is repelled when the wire 12 is cut. Therefore, the occurrence of bending in the wire 12 can be reduced. When the wire 12 is cut, the step of forming the bumps 21 that are multi-stage bent and laminated including the first wire bending convex portion 25 and the inclined wedge 22 is completed.

図6を参照しながら、参考例の半導体装置14の半導体チップ2のパッド3に形成されたバンプ21の上にワイヤ12をボンディングする工程について説明する。 A process of bonding the wire 12 on the bump 21 formed on the pad 3 of the semiconductor chip 2 of the semiconductor device 14 of the reference example will be described with reference to FIG.

図6(a)に示すように、第1ボンディング点であるリード4に第1ボンディングした後、ワイヤをルーピングし、ワイヤ12が挿通されたキャピラリ16のストレート孔37の中心が、リード4の反対側に形成されている第1ワイヤ折り曲げ凸部25の略中心となるようにキャピラリ16を移動させる。そして、キャピラリ16の中心位置が第1ワイヤ折り曲げ凸部25の略中心に来たら、キャピラリ16を下動させる。   As shown in FIG. 6A, after the first bonding to the lead 4 as the first bonding point, the wire is looped, and the center of the straight hole 37 of the capillary 16 through which the wire 12 is inserted is opposite to the lead 4. The capillary 16 is moved so as to be approximately at the center of the first wire bending convex portion 25 formed on the side. And if the center position of the capillary 16 comes to the approximate center of the 1st wire bending convex part 25, the capillary 16 will be moved down.

図6(b)に示すように、キャピラリ16は略半円球状の第1ワイヤ折り曲げ凸部25がストレート孔37の中に入り込むように下動し、リード4側のフェイス部33によってフェイス部33と傾斜ウェッジ22との間に入っているワイヤ12を傾斜ウェッジ22に向かって押し付ける。ワイヤ12がルーピングされてくるバンプ21のリード4側には、硬化した第2ワイヤ折り曲げ凸部27が上方向に出ていることから、キャピラリ16のフェイス部33によって下に押されたワイヤ12のリード4側は第2ワイヤ折り曲げ凸部27によってサポートされる。そして、更にキャピラリ16が下動してくると、フェイス部33と傾斜ウェッジ22との間の入っているワイヤ12は傾斜ウェッジ22に沿った形状に変形されてくる。そして、更にキャピラリ16が下動するとワイヤ12の上面はキャピラリ16のフェイス部33とアウタラディウス部35の形状に沿った形状となり、ワイヤ12の下面は傾斜ウェッジ22の面に押し付けられて傾斜ウェッジ22の面に沿った形状に変形し、ワイヤ12の下面はバンプ21に接合される。傾斜ウェッジ22の面とワイヤ12とは広い接合面積を持つこととなるので、ワイヤ12とバンプ21との接合性が向上する。   As shown in FIG. 6B, the capillary 16 moves downward so that the substantially semicircular first wire bending convex portion 25 enters the straight hole 37, and the face portion 33 is formed by the face portion 33 on the lead 4 side. And the wire 12 between the inclined wedge 22 and the inclined wedge 22 are pressed against the inclined wedge 22. On the lead 4 side of the bump 21 to which the wire 12 is looped, the hardened second wire bending convex portion 27 protrudes upward, so that the wire 12 pushed down by the face portion 33 of the capillary 16 is pressed. The lead 4 side is supported by the second wire bending projection 27. When the capillary 16 is further moved downward, the wire 12 between the face portion 33 and the inclined wedge 22 is deformed into a shape along the inclined wedge 22. When the capillary 16 is further moved downward, the upper surface of the wire 12 becomes a shape that conforms to the shape of the face portion 33 and the outer radius portion 35 of the capillary 16, and the lower surface of the wire 12 is pressed against the surface of the inclined wedge 22. The bottom surface of the wire 12 is bonded to the bump 21. Since the surface of the inclined wedge 22 and the wire 12 have a large bonding area, the bonding property between the wire 12 and the bump 21 is improved.

リード4の側に延びたワイヤ12は硬化した第2ワイヤ折り曲げ凸部27によってサポートされているので、キャピラリ16のフェイス部33とアウタラディウス部35とがワイヤ12を押し下げても、パッド3面に向かって下側に変形しないので、ワイヤ12がリード4又は半導体チップ2と接触することを防止することができる。   Since the wire 12 extending toward the lead 4 is supported by the hardened second wire bending convex portion 27, even if the face portion 33 and the outer radius portion 35 of the capillary 16 push down the wire 12, Since the wire 12 is not deformed downward, it is possible to prevent the wire 12 from contacting the lead 4 or the semiconductor chip 2.

キャピラリ16に挿通されたワイヤ12と傾斜ウェッジ22の上面とはバンプ21のリード4の反対側で連続し、このワイヤ12の連続部分はキャピラリ16のインナチャンファ部31によって硬化した第1ワイヤ折り曲げ凸部25に押し付けられて圧縮されワイヤ12の接合部分の断面積がワイヤ12の断面積より小さくなっているワイヤ押し潰し部20が形成される。ワイヤ押し潰し部20の形状、断面は、先に図5を参照して説明したワイヤ押し潰し部30と同様、第1ワイヤ折り曲げ凸部25の外面に沿った弓形形状で、第1ワイヤ折り曲げ凸部25のリード4側に位置している。   The wire 12 inserted into the capillary 16 and the upper surface of the inclined wedge 22 are continuous on the opposite side of the lead 4 of the bump 21, and the continuous portion of the wire 12 is a first wire bending protrusion that is cured by the inner chamfer portion 31 of the capillary 16. The wire crushing portion 20 is formed in which the cross-sectional area of the bonded portion of the wire 12 is compressed by being pressed against the portion 25 and is smaller than the cross-sectional area of the wire 12. The shape and cross section of the wire crushing portion 20 is an arcuate shape along the outer surface of the first wire bending convex portion 25 as in the wire crushing portion 30 described above with reference to FIG. It is located on the lead 4 side of the portion 25.

ワイヤ12のバンプ21への接合が終了すると、図6(c)に示すように、キャピラリ16は上昇する。この際、図示しないクランパは開放状態にあるので、キャピラリ16の上昇によってキャピラリ16の下にテールワイヤ18が延出される。   When the bonding of the wire 12 to the bump 21 is completed, the capillary 16 is raised as shown in FIG. At this time, since the clamper (not shown) is in an open state, the tail wire 18 is extended under the capillary 16 by raising the capillary 16.

図6(d)に示すように、テールワイヤ18の長さが次のボールを形成するのに必要な長さになるまでキャピラリ16が上昇すると、図示しないクランパが閉となってワイヤ12を把持してキャピラリ16の上昇と共に上昇する。するとクランパによってワイヤ12が上に向かって引き上げられ、ワイヤ12に張力が掛かり、断面積がワイヤ12の断面積よりも小さくなっているワイヤ押し潰し部20のところでワイヤ12が切断される。ワイヤ押し潰し部20の面積が小さくなるように形成されているので、ワイヤ12が切断された際に、その張力の反発によってワイヤ12に曲がりが発生することを低減することができる。ワイヤ12が切断されると、第1ワイヤ折り曲げ凸部25のリード4側の側面に沿った弓形形状のワイヤ切断面19が形成される。ワイヤ12が切断されるとボンディング工程は終了する。   As shown in FIG. 6 (d), when the capillary 16 is raised until the length of the tail wire 18 reaches a length necessary for forming the next ball, a clamper (not shown) is closed and the wire 12 is gripped. Then, the capillary 16 rises with the rise. Then, the wire 12 is pulled upward by the clamper, tension is applied to the wire 12, and the wire 12 is cut at the wire crushing portion 20 where the cross-sectional area is smaller than the cross-sectional area of the wire 12. Since the area of the wire crushing portion 20 is formed to be small, it is possible to reduce the occurrence of bending in the wire 12 due to the repulsion of the tension when the wire 12 is cut. When the wire 12 is cut, an arcuate wire cutting surface 19 is formed along the side surface of the first wire bending projection 25 on the lead 4 side. When the wire 12 is cut, the bonding process ends.

以上説明した参考例の半導体装置14では、広い接合面積を持つ傾斜ウェッジ22の面にワイヤ12を接合するので、ワイヤ12とバンプ21との接合性が向上するという効果を奏する。また、バンプ21の形成の際及びワイヤ12のバンプ21への接合の際に、硬化している第1ワイヤ折り曲げ凸部25とインナチャンファ部31によってワイヤ12を挟み込んで、その断面積がワイヤ12の断面積よりも小さくなるワイヤ押し潰し部20,30を形成し、ワイヤ押し潰し部20,30によってワイヤ12が切断されるので、ワイヤ12の切断力が小さくて済み、反発によってワイヤ12に曲がりが発生することを低減することができるという効果を奏する。更に、ワイヤ12をバンプ21に接合する際に、ワイヤ12は硬くなった第2ワイヤ折り曲げ凸部27によってサポートされているので、ボンディングによってパッド3面側に向かって下向きに変形せず、ワイヤ12がリード4又は半導体チップ2と接触することを防止することができるという効果を奏する。この様に、本参考例では、ワイヤ12とバンプ21との間の接合性を向上させると共にワイヤ12の切断性を向上させてボンディング品質の向上を図ることができるという効果を奏する。 In the semiconductor device 14 of the reference example described above, since the wire 12 is bonded to the surface of the inclined wedge 22 having a large bonding area, the bonding property between the wire 12 and the bump 21 is improved. Further, when the bump 21 is formed and when the wire 12 is bonded to the bump 21, the wire 12 is sandwiched between the hardened first wire bending convex portion 25 and the inner chamfer portion 31, and the cross-sectional area thereof is the wire 12. The wire crushing portions 20 and 30 that are smaller than the cross-sectional area of the wire 12 are formed, and the wire 12 is cut by the wire crushing portions 20 and 30. It is possible to reduce the occurrence of. Further, when the wire 12 is bonded to the bump 21, the wire 12 is supported by the hardened second wire bending convex portion 27, so that it is not deformed downward toward the pad 3 surface side by bonding, and the wire 12 It is possible to prevent the contact with the lead 4 or the semiconductor chip 2. As described above, in this reference example , the bonding property between the wire 12 and the bump 21 can be improved, and the cutting property of the wire 12 can be improved to improve the bonding quality.

上記の参考例では、第1ボンド点のリードフレーム15のリード4よりも高い位置にある第2ボンド点の半導体チップ2のパッド3にバンプ21を形成することとして説明したが、バンプ21は第1ボンド点よりも高い位置に形成しても低い位置に形成してもよく、また、パッド3の上に限らず、リードフレーム15のリード4の上に形成することとしても良い。 In the above reference example , the bump 21 is formed on the pad 3 of the semiconductor chip 2 at the second bond point that is higher than the lead 4 of the lead frame 15 at the first bond point. It may be formed at a position higher or lower than one bond point, and may be formed not only on the pad 3 but also on the lead 4 of the lead frame 15.

以下、図面を参照しながら、本発明の他の参考例について説明する。先に説明した参考例と同様の部分には同様の符号を付して説明は省略する。 Hereinafter, another reference example of the present invention will be described with reference to the drawings. Parts similar to those of the reference example described above are denoted by the same reference numerals, and description thereof is omitted.

図7に示すように、リード4の上に形成されたバンプ21は、リード4の面から順に、圧着ボール6とその上に押し付けられたバンプワイヤ21a’によって構成される第1段バンプ21aと、パッド3とは反対方向に形成された第1ワイヤ折り曲げ凸部25と、第1段バンプの上からワイヤ12を押し付けて形成された第2段バンプ21bと、バンプ上面の傾斜ウェッジ22と、ワイヤ12を折り曲げてバンプ21を形成する際にワイヤ12を切断したワイヤ切断面28とを備え、ワイヤ12を折り曲げ積層した構成となっている。ワイヤ12は、第1ボンド点であるパッド3の上に1次ボンディングを行って圧着ボール6を形成した後、バンプ21に向かってルーピングし、第2ボンド点であるリード4に形成されたバンプ21の上面にある傾斜ウェッジ22に接合されており、バンプ21のパッド3とは反対方向に形成された第1ワイヤ折り曲げ凸部25の側にワイヤ切断面19を備えている。   As shown in FIG. 7, the bump 21 formed on the lead 4 includes, in order from the surface of the lead 4, a first-stage bump 21 a configured by the press-bonded ball 6 and a bump wire 21 a ′ pressed thereon. A first wire bending convex portion 25 formed in a direction opposite to the pad 3, a second step bump 21b formed by pressing the wire 12 from above the first step bump, an inclined wedge 22 on the upper surface of the bump, a wire When the bumps 21 are formed by bending the wire 12, the wire 12 is cut, and the wire 12 is bent and laminated. The wire 12 is subjected to primary bonding on the pad 3 that is the first bond point to form the press-bonded ball 6, and then looped toward the bump 21 to form the bump 4 formed on the lead 4 that is the second bond point. A wire cutting surface 19 is provided on the side of the first wire bending convex portion 25 which is bonded to the inclined wedge 22 on the upper surface of the bump 21 and formed in the direction opposite to the pad 3 of the bump 21.

図8を参照しながら、参考例の半導体装置14のリードフレーム15のリード4にバンプ21を形成する工程について説明する。図8(a)から(d)までのバンプ21の形成工程は、先の参考例で説明した図4(a)から(d)のバンプ21の形成工程と同様の工程で、図4(a)から(d)の工程のパッド3をリード4に、リード4をパッド3に置き換えたもので、第1ボンド点は半導体チップ2のパッド3で第2ボンド点はリードフレーム15のリード4である。図8(a)から図8(d)の工程によって、第1段バンプ21aと、第2段バンプ21bと、第1ワイヤ折り曲げ凸部25と、が形成される。第2段バンプ21bの形成の際にキャピラリ16のフェイス部33を押し付ける事によって傾斜面を持つ傾斜ウェッジ22が形成される。傾斜ウェッジ22は第1ボンド点であるパッド3と反対側にある第1ワイヤ折り曲げ凸部25からパッド3の側の向かって低くなるような傾斜面を持っている。また、キャピラリ16に挿通されたワイヤ12と第2段バンプ21bとはバンプ21のパッド3側で連続し、このワイヤ12の連続部分には断面積がワイヤ12の断面積よりも小さいワイヤ押し潰し部34が形成されている。 A process of forming the bumps 21 on the leads 4 of the lead frame 15 of the semiconductor device 14 of the reference example will be described with reference to FIG. The bump 21 formation process from FIG. 8A to FIG. 8D is the same as the bump 21 formation process of FIG. 4A to FIG. 4D described in the previous reference example . ) To (d) in which the pad 3 is replaced with the lead 4 and the lead 4 is replaced with the pad 3. The first bond point is the pad 3 of the semiconductor chip 2 and the second bond point is the lead 4 of the lead frame 15. is there. The first step bump 21a, the second step bump 21b, and the first wire bending convex portion 25 are formed by the steps of FIG. 8A to FIG. 8D. An inclined wedge 22 having an inclined surface is formed by pressing the face portion 33 of the capillary 16 when forming the second bump 21b. The inclined wedge 22 has an inclined surface that becomes lower toward the pad 3 side from the first wire bending convex portion 25 on the opposite side to the pad 3 that is the first bond point. Further, the wire 12 inserted into the capillary 16 and the second step bump 21 b are continuous on the pad 3 side of the bump 21, and the continuous portion of the wire 12 has a cross-sectional area smaller than the cross-sectional area of the wire 12. A portion 34 is formed.

図8(e)に示すように、第2段バンプ21bの形成が終了すると、キャピラリ16は、図示しないクランパを開いた状態で上昇する。キャピラリ16が上昇するとキャピラリ16の下側にテールワイヤ18が延出される。   As shown in FIG. 8 (e), when the formation of the second bumps 21b is completed, the capillary 16 moves up with a clamper (not shown) opened. When the capillary 16 is raised, the tail wire 18 is extended to the lower side of the capillary 16.

図8(f)に示すように、キャピラリ16はテールワイヤ18の長さが所定の長さになるまで上昇した後、クランパが閉となってワイヤ12を把持してキャピラリ16とともに上昇する。すると、第2段バンプ21bの形成の際にキャピラリ16の先端によってワイヤ12の断面積よりも断面積が小さくなるように形成されたワイヤ押し潰し部34に大きな応力がかかり、ワイヤ12が切断される。ワイヤ12が切断されると、ワイヤ切断面28が形成される。このワイヤ切断面28は傾斜ウェッジ22の上面から少し上側に凸となっている。   As shown in FIG. 8 (f), after the capillary 16 is raised until the length of the tail wire 18 reaches a predetermined length, the clamper is closed and the wire 12 is gripped to rise together with the capillary 16. Then, when the second step bump 21b is formed, a large stress is applied to the wire crushing portion 34 formed by the tip of the capillary 16 so that the cross-sectional area becomes smaller than the cross-sectional area of the wire 12, and the wire 12 is cut. The When the wire 12 is cut, a wire cut surface 28 is formed. The wire cutting surface 28 is slightly convex upward from the upper surface of the inclined wedge 22.

図9を参照しながら、参考例におけるバンプ21へのワイヤ12の接合について説明する。先に説明した図2と同様の部分には同様の符号を付して説明は省略する。参考例のバンプ21はワイヤ12がルーピングされてくるパッド3側に、ワイヤ切断面28が形成されている。ワイヤ切断面28はワイヤ12を折り曲げ成形していないので、硬化していない。そのためワイヤ12をサポートする力は先の参考例よりも低くなっている。しかし、図7に示すように本参考例では、バンプ21は半導体チップ2のパッド3よりも低い位置にあるリード4の上に形成されていることから、図9に示すようにルーピングされてくるワイヤ12の第1ボンド点側であるパッド3側は上方向に引っ張られている。このため、硬化していないワイヤ切断面28でもワイヤ12をサポートすることができ、ワイヤ12が下側に変形してリード4に接触することはない。ワイヤ12を接合する傾斜ウェッジ22とワイヤ12との接触面積は大きく、また、キャピラリ16のストレート孔37の中心位置を硬化した第1ワイヤ折り曲げ凸部25の中心位置に合わせてボンディングし、ワイヤ12の断面積よりも小さな断面積を持つワイヤ押し潰し部20を形成し、そのワイヤ押し潰し部20によってワイヤ12を切断することは、先に説明した参考例と同様である。 With reference to FIG. 9, the bonding of the wire 12 to the bump 21 in the reference example will be described. Parts similar to those in FIG. 2 described above are denoted by the same reference numerals, and description thereof is omitted. The bump 21 of the reference example has a wire cut surface 28 formed on the pad 3 side where the wire 12 is looped. The wire cutting surface 28 is not cured because the wire 12 is not bent. Therefore, the force for supporting the wire 12 is lower than that of the previous reference example . However, as shown in FIG. 7, in this reference example , the bump 21 is formed on the lead 4 located at a position lower than the pad 3 of the semiconductor chip 2, and therefore looped as shown in FIG. The pad 3 side which is the first bond point side of the wire 12 is pulled upward. For this reason, the wire 12 can be supported by the uncured wire cut surface 28, and the wire 12 is not deformed downward and does not contact the lead 4. The contact area between the inclined wedge 22 that joins the wire 12 and the wire 12 is large, and the center position of the straight hole 37 of the capillary 16 is bonded to the center position of the hardened first wire bending convex portion 25 to bond the wire 12. The wire crushing portion 20 having a cross-sectional area smaller than the cross-sectional area is formed, and the wire 12 is cut by the wire crushing portion 20 as in the above-described reference example .

以上説明した参考例の半導体装置14は、先の参考例と同様、ワイヤ12とバンプ21との間の接合性を向上させると共にワイヤ12の切断性を向上させてボンディング品質の向上を図ることができるという効果を奏する。更に、本参考例は、バンプ21の積層回数が第1段、第2段の2層で済むことから、バンプ形成を短時間に行うことができ、ボンディング時間を短縮することができるという効果を奏する。 The semiconductor device 14 of the reference example described above can improve the bonding quality between the wire 12 and the bump 21 as well as the cutting ability of the wire 12 and improve the bonding quality as in the previous reference example. There is an effect that can be done. Furthermore, since the number of laminations of the bumps 21 is only two in the first and second stages, the present reference example has the effect that the bump formation can be performed in a short time and the bonding time can be shortened. Play.

上記の参考例では、第1ボンド点よりも低い位置にある第2ボンド点であるリード4の上にバンプ21を形成することとして説明したが、第1ボンド点よりも低い位置にある第2ボンド点にバンプ21を形成するのであれば、リード4の上に限らず、半導体チップ2のパッド3の上に形成するようにしてもよい。 In the reference example described above, the bump 21 is formed on the lead 4 that is the second bond point at a position lower than the first bond point. However, the second position at a position lower than the first bond point is described. As long as the bump 21 is formed at the bond point, the bump 21 may be formed not only on the lead 4 but also on the pad 3 of the semiconductor chip 2.

以下、図面を参照しながら、本発明の実施形態について説明する。先に図2から図6を参照して説明した参考例と同様の部分には同様の符号を付して説明は省略する。本実施形態は、先に説明した参考例よりも先端が細いキャピラリ16によるワイヤボンディング方法及びその方法によって製造した半導体装置に関するものである。近年の半導体装置のファインピッチ化に対応するように先端の細いキャピラリ16が多く使われる様になってきているが、キャピラリ16の先端が細くなると、図2から図6を参照して説明した参考例では、第2ワイヤ折り曲げ凸部27が独立した半球状に形成されてしまい、ルーピングワイヤをサポートできない場合がある。本実施形態は、先端が細いキャピラリ16を用いてワイヤボンディングを行った場合でも、ルーピングワイヤを効果的にサポートしてワイヤ12とバンプ21との間の接合性を向上させることができる。 Hereinafter, with reference to the accompanying drawings, a description will be given implementation of the invention. Parts similar to those of the reference example described above with reference to FIGS. 2 to 6 are denoted by the same reference numerals, and description thereof is omitted. The present embodiment relates to a wire bonding method using a capillary 16 having a narrower tip than the reference example described above and a semiconductor device manufactured by the method. In order to cope with the fine pitch of semiconductor devices in recent years, a capillary 16 having a thin tip is often used. However, if the tip of the capillary 16 becomes thin, the reference described with reference to FIGS. In an example , the 2nd wire bending convex part 27 may be formed in the independent hemisphere, and a looping wire may not be supported. In the present embodiment, even when wire bonding is performed using the capillary 16 having a narrow tip, it is possible to effectively support the looping wire and improve the bonding property between the wire 12 and the bump 21.

図10に示すように、パッド3の上に形成されたバンプ21は、パッド3面から順に、圧着ボール6とその上に押し付けられたバンプワイヤ21a’によって構成される第1段バンプ21aと、リード4とは反対方向に形成された第1ワイヤ折り曲げ凸部25と、第1段バンプの上からワイヤ12を押し付けて形成された第2段バンプ21bと、リード4の側に形成された第2ワイヤ折り曲げ凸部27と、バンプ上面の傾斜ウェッジ22と、ワイヤ12を折り曲げてバンプ21を形成する際にワイヤ12を長手方向に引張して切断した引張切断面であるワイヤ切断面29を備え、ワイヤ12を折り曲げ積層した構成となっている。ワイヤ12は、第1ボンド点であるリード4の上に1次ボンディングを行って圧着ボール6を形成した後、バンプ21に向かってルーピングし、第2ボンド点であるパッド3に形成されたバンプ21の上面にある傾斜ウェッジ22に接合されている。バンプ21のリード4とは反対方向に形成された第1ワイヤ折り曲げ凸部25の側には、ワイヤ12の一部を径方向のせん断力によって切断したせん断切断面であるワイヤせん断切断面43と、ワイヤ12を長手方向に引張して切断した引張切断面であるワイヤ切断面19を備えている。ワイヤせん断切断面43は、半導体装置14のパッド3を含む面に略平行な面となっている。   As shown in FIG. 10, the bump 21 formed on the pad 3 includes, in order from the surface of the pad 3, the first-stage bump 21 a configured by the press-bonded ball 6 and the bump wire 21 a ′ pressed thereon, 4, the first wire bending convex portion 25 formed in the opposite direction to the wire 4, the second step bump 21 b formed by pressing the wire 12 from above the first step bump, and the second step formed on the lead 4 side. A wire bending convex portion 27, an inclined wedge 22 on the upper surface of the bump, and a wire cutting surface 29 which is a tensile cutting surface obtained by pulling the wire 12 in the longitudinal direction when the wire 12 is bent to form the bump 21; The wire 12 is bent and laminated. The wire 12 is subjected to primary bonding on the lead 4 that is the first bond point to form the press-bonded ball 6, and then looped toward the bump 21 to form the bump formed on the pad 3 that is the second bond point. 21 is joined to an inclined wedge 22 on the upper surface of 21. On the side of the first wire bending convex portion 25 formed in the direction opposite to the lead 4 of the bump 21, a wire shear cutting surface 43, which is a shear cutting surface obtained by cutting a part of the wire 12 by a radial shear force, The wire cutting surface 19 which is a tensile cut surface obtained by pulling the wire 12 in the longitudinal direction and cutting the wire 12 is provided. The wire shear cut surface 43 is a surface substantially parallel to the surface including the pad 3 of the semiconductor device 14.

バンプ21の上面は中央が凹部となって、ワイヤ12の接続方向に沿って両側にある第1、第2ワイヤ折り曲げ凸部25,27は上方向に凸の形状となっている。傾斜ウェッジ22は、中央の凹部から第1ボンド点であるリード4側にある第2ワイヤ折り曲げ凸部27に向かって形成された傾斜した面である。このように、傾斜ウェッジ22の傾斜は第1ボンド点であるリード4の側の高さが高く、第1ボンド点から第2ボンド点のパッド3側に向かう方向に沿って高さが低くなるような傾斜となっている。ワイヤ12は、この傾斜ウェッジ22の面に沿って接合されている。   The center of the upper surface of the bump 21 is a concave portion, and the first and second wire bending convex portions 25 and 27 on both sides along the connecting direction of the wire 12 are convex upward. The inclined wedge 22 is an inclined surface formed from the central concave portion toward the second wire bending convex portion 27 on the lead 4 side which is the first bond point. As described above, the inclination of the inclined wedge 22 is high on the side of the lead 4 that is the first bond point, and is low along the direction from the first bond point toward the pad 3 side of the second bond point. It has a slope like this. The wire 12 is bonded along the surface of the inclined wedge 22.

第1ワイヤ折り曲げ凸部25に沿ってバンプ形成の際のワイヤ切断面29とワイヤボンディングの際のワイヤ切断面19が位置している。また、ワイヤ切断面19に隣接してワイヤせん断切断面43が位置している。   A wire cutting surface 29 for bump formation and a wire cutting surface 19 for wire bonding are located along the first wire bending projection 25. Further, a wire shear cutting surface 43 is located adjacent to the wire cutting surface 19.

図11に示すように、バンプ21の第1ワイヤ折り曲げ凸部25は第1ボンド点であるリード4と反対方向に張り出し、第2ワイヤ折り曲げ凸部27は第1ボンド点であるリード4の方向に張り出している。第1ワイヤ折り曲げ凸部25は、バンプ21の上面に向かう略半円球状の突起形状であり、第2ワイヤ折り曲げ凸部27は、第1ボンド点であるリード4の側がバンプ21の上面に向かう部分円球状の突起形状で、反対側が傾斜ウェッジ22の傾斜面となっている。   As shown in FIG. 11, the first wire bending convex portion 25 of the bump 21 projects in a direction opposite to the lead 4 that is the first bond point, and the second wire bending convex portion 27 is the direction of the lead 4 that is the first bond point. Overhangs. The first wire bending convex part 25 has a substantially semi-spherical protrusion shape toward the upper surface of the bump 21, and the second wire bending convex part 27 has the lead 4 side that is the first bond point toward the upper surface of the bump 21. It is a partial spherical projection shape, and the opposite side is the inclined surface of the inclined wedge 22.

各ワイヤ切断面19,29は弓形形状の断面となっている。バンプ形成の際のワイヤ12のワイヤ切断面29は、ワイヤボンディングの際のワイヤ12のワイヤ切断面19と第1ワイヤ折り曲げ凸部25との間にあっても良いし、ワイヤ切断面19の下側にあって、ワイヤ切断面19と第2バンプ21bとの間にあってもよい。また、ワイヤせん断切断面43はワイヤ12の一部をリード4の側からパッド3に向かって径方向にせん断した面であることから、リード4側に湾曲した三日月型形状となってワイヤ切断面19につながっている。   Each wire cutting surface 19, 29 has an arcuate cross section. The wire cutting surface 29 of the wire 12 at the time of bump formation may be between the wire cutting surface 19 of the wire 12 at the time of wire bonding and the first wire bending convex portion 25, or below the wire cutting surface 19. Therefore, it may be between the wire cut surface 19 and the second bump 21b. Further, since the wire shear cut surface 43 is a surface obtained by shearing a part of the wire 12 in the radial direction from the lead 4 side toward the pad 3, the wire cut surface has a crescent shape curved toward the lead 4 side. 19 is connected.

図12を参照しながら、本実施形態の半導体装置14のパッド3にバンプ21を形成する工程について説明する。先の参考例で説明した図4(a)から(b)のバンプ21の形成工程と同様の工程によって、圧着ボール6と、圧着ボール6に押し付けられて扁平形状に形成されたバンプワイヤ21a’とが形成される。圧着ボール6とバンプワイヤ21a’とによって第1段バンプ21aが形成され、図4(c)、(d)と同様の工程によって、第1ワイヤ折り曲げ凸部25と、第1段バンプ21aに圧着された第2段バンプ21bが形成される。 With reference to FIG. 12, a process of forming the bump 21 on the pad 3 of the semiconductor device 14 of the present embodiment will be described. By the same process as the bump 21 forming process of FIGS. 4A to 4B described in the previous reference example , the press-bonded ball 6 and the bump wire 21a ′ formed into a flat shape by being pressed against the press-bonded ball 6 Is formed. The first bump 21a is formed by the crimp ball 6 and the bump wire 21a ′, and is crimped to the first wire bending convex portion 25 and the first bump 21a by the same process as in FIGS. 4C and 4D. A second step bump 21b is formed.

図12(a)に示すように、第2バンプ21bと第1ワイヤ折り曲げ凸部25の形成後、キャピラリは上昇し、リード4の反対側に向かって移動する。キャピラリ16の横移動によって、ワイヤ12は、リード4側からリード4の反対側に向かって折り曲げられ、第2ワイヤ折り曲げ凸部27が形成される。そして、キャピラリ16のリード4側のアウタラディウス部35の端面が略第2ワイヤ折り曲げ凸部27の中心位置となる位置まで移動する。この位置では、キャピラリ16のストレート孔37の中心位置は第1ワイヤ折り曲げ凸部25の中心位置よりもリード4の側にずれた位置となっている。   As shown in FIG. 12A, after the formation of the second bump 21 b and the first wire bending convex portion 25, the capillary rises and moves toward the opposite side of the lead 4. By the lateral movement of the capillary 16, the wire 12 is bent from the lead 4 side toward the opposite side of the lead 4, and a second wire bending convex portion 27 is formed. Then, the end surface of the outer radius part 35 on the lead 4 side of the capillary 16 moves to a position where it is substantially the center position of the second wire bending convex part 27. At this position, the center position of the straight hole 37 of the capillary 16 is shifted to the lead 4 side from the center position of the first wire bending projection 25.

図12(b)に示すように、キャピラリ16の横移動後、キャピラリ16はリード4側のアウタラディウス部35とそれに続くフェイス部33によってフェイス部33と第2段バンプ21bとの間に入っているワイヤ12をパッド3に向かって押し付ける。ワイヤ12は第2段バンプ21bに押し付けられて扁平形状に形成されると共に第2段バンプ21bに圧着されて第3段バンプ21cが形成される。キャピラリ16のリード4側のアウタラディウス部35の端面は略第2ワイヤ折り曲げ凸部27の中心位置において下動するので、アウタラディウス部35の端面とそれに続くフェイス部33は第2ワイヤ折り曲げ凸部27の中心からリード4と反対側にある半分の凸部をパッド3に向かって押し付ける。これによって第2ワイヤ折り曲げ凸部27のリード4の反対側部分はアウタラディウス部35の端面とそれに続くフェイス部33に沿った形状に成形され、第2ワイヤ折り曲げ凸部27の略中心位置からリード4の反対側に向かって湾曲した曲面と、その曲面に続きリード4の反対側に向かって低くなるように傾斜した平面とが形成される。この曲面と平面が傾斜ウェッジ22となる。また、第2ワイヤ折り曲げ凸部27の中心からリード4側の半分はアウタラディウス部35とフェイス部33によってパッド3に向かって押し付けられないので、部分円球形状となる。第2ワイヤ折り曲げ凸部27はキャピラリ16の下動による第3段バンプ21cの形成によって略180度折り曲げられるので、第2ワイヤ折り曲げ凸部27は曲げによる加工硬化によって他の部分よりも硬度が高くなる。このように、キャピラリ16のアウタラディウス部35の端面とそれに続くフェイス部33が第2ワイヤ折り曲げ凸部27の中心からリード4と反対側にある半分の凸部をパッド3に向かって押し付けるので、キャピラリ16の先端が細い場合でも、第2ワイヤ折り曲げ凸部27が独立した半球型の凸部とならず、リード4側の部分円球形状とそれに続いた傾斜ウェッジ22に成形することができる。   As shown in FIG. 12B, after the capillary 16 is moved laterally, the capillary 16 enters between the face portion 33 and the second step bump 21b by the outer radius portion 35 on the lead 4 side and the subsequent face portion 33. The wire 12 is pressed toward the pad 3. The wire 12 is pressed against the second step bump 21b to form a flat shape, and is crimped to the second step bump 21b to form a third step bump 21c. Since the end surface of the outer radius portion 35 on the lead 4 side of the capillary 16 moves down substantially at the center position of the second wire bending convex portion 27, the end surface of the outer radius portion 35 and the face portion 33 following the end surface are arranged on the second wire bending convex portion. A half convex portion on the opposite side of the lead 4 from the center of 27 is pressed toward the pad 3. As a result, the opposite side portion of the lead 4 of the second wire bending convex portion 27 is formed into a shape along the end surface of the outer radius portion 35 and the face portion 33 subsequent thereto, and the lead is formed from the substantially central position of the second wire bending convex portion 27. A curved surface that curves toward the opposite side of 4 and a flat surface that slopes downward toward the opposite side of the lead 4 are formed following the curved surface. The curved surface and the flat surface become the inclined wedge 22. Further, since the half of the lead 4 side from the center of the second wire bending convex portion 27 is not pressed toward the pad 3 by the outer radius portion 35 and the face portion 33, it becomes a partial spherical shape. Since the second wire bending convex part 27 is bent by about 180 degrees by the formation of the third step bump 21c by the downward movement of the capillary 16, the second wire bending convex part 27 has higher hardness than other parts by work hardening by bending. Become. In this way, the end face of the outer radius part 35 of the capillary 16 and the face part 33 that follows from the end face press the half convex part on the side opposite to the lead 4 from the center of the second wire bending convex part 27 toward the pad 3. Even when the tip of the capillary 16 is thin, the second wire bending convex portion 27 does not become an independent hemispherical convex portion, but can be formed into a partial spherical shape on the lead 4 side and an inclined wedge 22 subsequent thereto.

図12(c)に示すように、キャピラリ16の下動によって第3段バンプ21cと第2ワイヤ折り曲げ凸部27と傾斜ウェッジ22とが形成されると、キャピラリ16は傾斜ウェッジ22の上面からその先端高さが第1ワイヤ折り曲げ凸部25の上端高さよりも低い位置まで上昇する。   As shown in FIG. 12C, when the third step bump 21 c, the second wire bending convex portion 27, and the inclined wedge 22 are formed by the downward movement of the capillary 16, the capillary 16 is moved from the upper surface of the inclined wedge 22. The tip height rises to a position lower than the upper end height of the first wire bending convex portion 25.

図12(d)に示すように、キャピラリ16は上昇後、リード4の反対側に向かって、パッド3に略平行に横移動する。キャピラリ16に挿通されたワイヤ12と第3段バンプ21cとの連続部分はキャピラリ16のストレート孔37とインナチャンファ部31によって第1ワイヤ折り曲げ凸部25のリード4側面に押し付けられる。第1ワイヤ折り曲げ凸部25は、先の工程で曲げ加工の加工硬化によって他の部分よりも硬くなっているので、硬質材料によって構成されたキャピラリ16のストレート孔37とインナチャンファ部31との間に挟みこんだワイヤ12を変形させることができる。そして、更にキャピラリ16をリード4の反対側に向かって横移動させていくと、キャピラリ16のインナチャンファ部31の角部32がワイヤ12に食い込み、角部32のエッジによってワイヤ12が径方向にせん断切断され始め、せん断切断によって上面が略水平な台地状のワイヤせん断切断面41が形成される。また同時にインナチャンファ部31は第1ワイヤ折り曲げ凸部25との間に挟み込んだワイヤ12を圧縮し、ワイヤ12の連続部分の断面積がワイヤ12の断面積より小さくなっている弓形形状断面を持つワイヤ押し潰し部30を形成する。   As shown in FIG. 12 (d), the capillary 16 moves upward and then laterally moves in parallel with the pad 3 toward the opposite side of the lead 4. The continuous portion of the wire 12 inserted through the capillary 16 and the third bump 21 c is pressed against the side surface of the lead 4 of the first wire bending convex portion 25 by the straight hole 37 and the inner chamfer portion 31 of the capillary 16. Since the first wire bending convex part 25 is harder than the other part by the work hardening of the bending process in the previous step, the gap between the straight hole 37 of the capillary 16 made of a hard material and the inner chamfer part 31 is made. The wire 12 sandwiched between the two can be deformed. When the capillary 16 is further moved laterally toward the opposite side of the lead 4, the corner portion 32 of the inner chamfer portion 31 of the capillary 16 bites into the wire 12, and the wire 12 is radially moved by the edge of the corner portion 32. The shear cutting starts, and a plate-like wire shear cutting surface 41 whose upper surface is substantially horizontal is formed by the shear cutting. At the same time, the inner chamfer portion 31 compresses the wire 12 sandwiched between the first wire bending convex portion 25 and has an arcuate cross section in which the cross-sectional area of the continuous portion of the wire 12 is smaller than the cross-sectional area of the wire 12. The wire crushing part 30 is formed.

図13(c)に示すように、ワイヤ12は円形テーパー形状のインナチャンファ部31と略半円球状の第1ワイヤ折り曲げ凸部25とに挟まれて圧縮成形され、第1ワイヤ折り曲げ凸部25の外面に沿った弓形形状のワイヤ押し潰し部30が形成される。ワイヤ押し潰し部30は第1ワイヤ折り曲げ凸部25のリード4側に位置している。また、ワイヤ押し潰し部30のリード4側にはワイヤ12の一部を径方向にせん断切断することによって形成されたワイヤせん断切断面41が位置している。ワイヤせん断切断面41はリード4の側に凸となった三日月形の平面形状で、その上面はパッド3に略平行で、傾斜ウェッジ22から立ち上がった台地形状となっている。そして、図13(a)に示すように、成形された後のワイヤ12は、キャピラリ16のストレート孔37とワイヤ12とのクリアランス分だけリード4の反対側に向かって傾斜してストレート孔37にガイドされて上方向に延びるような形状となる。   As shown in FIG. 13C, the wire 12 is compression-molded by being sandwiched between a circular taper-shaped inner chamfer portion 31 and a first semi-spherical first wire bending convex portion 25, and the first wire bending convex portion 25. An arcuate wire crushing portion 30 is formed along the outer surface. The wire crushing portion 30 is located on the lead 4 side of the first wire bending convex portion 25. A wire shear cut surface 41 formed by shear cutting a part of the wire 12 in the radial direction is located on the lead 4 side of the wire crushing portion 30. The wire shear cut surface 41 has a crescent-shaped planar shape that protrudes toward the lead 4, and the upper surface thereof is substantially parallel to the pad 3 and has a plateau shape rising from the inclined wedge 22. Then, as shown in FIG. 13A, the wire 12 after being formed is inclined toward the opposite side of the lead 4 by an amount corresponding to the clearance between the straight hole 37 of the capillary 16 and the wire 12 and becomes the straight hole 37. The shape is such that it is guided and extends upward.

図12(e)に示すように、ワイヤ12の一部のせん断切断とワイヤ押し潰し部30の形成が終了したら、キャピラリ16は上昇する。この際、図示しないクランパは開放状態にあるので、キャピラリ16の上昇によってキャピラリ16の下にテールワイヤ18が延出される。   As shown in FIG. 12 (e), the capillary 16 ascends when the partial shear cutting of the wire 12 and the formation of the wire crushing portion 30 are completed. At this time, since the clamper (not shown) is in an open state, the tail wire 18 is extended under the capillary 16 by raising the capillary 16.

図12(f)に示すように、テールワイヤ18の長さが次のボールを形成するのに必要な長さになるまでキャピラリ16が上昇すると、図示しないクランパが閉となってワイヤ12を把持してキャピラリ16の上昇と共に上昇する。するとクランパによってワイヤ12が上に向かって引き上げられ、ワイヤ12に張力が掛かる。ワイヤ押し潰し部30はその断面積がワイヤ12の断面積よりも小さくなっているので、ワイヤ12にかかった張力によってワイヤ押し潰し部30には大きな引張り応力が発生する。そして、この引っ張り応力によって、ワイヤ押し潰し部30のところでワイヤ12が引張切断されてワイヤ切断面29が形成される。ワイヤ押し潰し部30の面積が小さくなるように形成されているので、ワイヤ12の引張切断の際にワイヤ12全体にかかる引っ張り力は小さくて済み、ワイヤ12が引張切断された際に、その引張力の反発によってワイヤ12に曲がりが発生することを低減することができる。ワイヤ12が引張切断されると、第1ワイヤ折り曲げ凸部25と傾斜ウェッジ22を備える多段折り曲げ積層したバンプ21の形成工程は終了する。   As shown in FIG. 12 (f), when the capillary 16 is raised until the length of the tail wire 18 reaches a length necessary for forming the next ball, a clamper (not shown) is closed and the wire 12 is gripped. Then, the capillary 16 rises with the rise. Then, the wire 12 is pulled upward by the clamper, and tension is applied to the wire 12. Since the cross-sectional area of the wire crushing portion 30 is smaller than the cross-sectional area of the wire 12, a large tensile stress is generated in the wire crushing portion 30 due to the tension applied to the wire 12. Then, by this tensile stress, the wire 12 is pulled and cut at the wire crushing portion 30 to form the wire cut surface 29. Since the area of the wire crushing portion 30 is formed to be small, the tensile force applied to the entire wire 12 when the wire 12 is pulled and cut is small, and when the wire 12 is pulled and cut, the tensile force is reduced. The occurrence of bending in the wire 12 due to the repulsion of force can be reduced. When the wire 12 is pulled and cut, the step of forming the multi-stage bent bump 21 including the first wire bending convex portion 25 and the inclined wedge 22 is completed.

図14を参照しながら、本実施形態の半導体装置14の半導体チップ2のパッド3に形成されたバンプ21の上にワイヤ12を接合する工程について説明する。   With reference to FIG. 14, a process of bonding the wire 12 onto the bump 21 formed on the pad 3 of the semiconductor chip 2 of the semiconductor device 14 of the present embodiment will be described.

図14(a)に示すように、第1ボンディング点であるリード4に第1ボンディングした後、ワイヤをルーピングし、ワイヤ12が挿通されたキャピラリ16のリード4側のアウタラディウス部35端面がバンプ21上面に形成された傾斜ウェッジ22のリード4側端部の位置となるようにキャピラリ16を横移動させ、ボンディング工程を開始する。そして、キャピラリ16のリード4側のアウタラディウス部35端面がパンプ上面に形成された傾斜ウェッジ22のリード側端部の位置に来たら、キャピラリ16を下動させる。   As shown in FIG. 14A, after the first bonding to the lead 4 as the first bonding point, the wire is looped, and the end surface of the outer radius portion 35 on the lead 4 side of the capillary 16 through which the wire 12 is inserted is bumped. 21. The capillary 16 is moved laterally so as to be positioned at the end of the inclined wedge 22 formed on the upper surface of the inclined wedge 22, and the bonding process is started. When the end surface of the outer radius portion 35 on the lead 4 side of the capillary 16 comes to the position of the lead side end portion of the inclined wedge 22 formed on the upper surface of the pump, the capillary 16 is moved downward.

図14(b)に示すように、キャピラリ16はリード4側のアウタラディウス部35端面とそれに続くフェイス部33とが傾斜ウェッジ22の面に沿うように下動し、リード4側のフェイス部33によってフェイス部33と傾斜ウェッジ22との間に入っているワイヤ12を傾斜ウェッジ22に向かって押し付ける。第2ワイヤ折り曲げ凸部27はワイヤ12がルーピングされてくるバンプ21のリード4側の部分円球形状に形成されて、折り曲げ加工によって硬化しているので、キャピラリ16のフェイス部33によって下に押されたワイヤ12のリード4側は第2ワイヤ折り曲げ凸部27によってサポートされる。そして、更にキャピラリ16が下動してくると、フェイス部33と傾斜ウェッジ22との間の入っているワイヤ12は傾斜ウェッジ22に沿った形状に変形されてくる。そして、更にキャピラリ16が下動するとワイヤ12の上面はキャピラリ16のフェイス部33とアウタラディウス部35の形状に沿った形状となり、ワイヤ12の下面は傾斜ウェッジ22の面に押し付けられて傾斜ウェッジ22の面に沿った形状に変形し、ワイヤ12の下面はバンプ21に接合される。このとき、バンプ21の形成の際にできた台地形状のワイヤせん断切断面41の上にもワイヤ12が押し付けられ、ワイヤせん断切断面41は潰れてワイヤ12と接合される。傾斜ウェッジ22の面、ワイヤせん断切断面41とワイヤ12とは広い接合面積を持つこととなるので、ワイヤ12とバンプ21との接合性が向上する。   As shown in FIG. 14B, the capillary 16 moves downward so that the end surface of the outer radius 35 on the lead 4 side and the face portion 33 that follows the end face are along the surface of the inclined wedge 22, and the face portion 33 on the lead 4 side. Thus, the wire 12 placed between the face portion 33 and the inclined wedge 22 is pressed toward the inclined wedge 22. The second wire bending projection 27 is formed in a partial spherical shape on the lead 4 side of the bump 21 to which the wire 12 is looped, and is hardened by the bending process, so that it is pushed downward by the face portion 33 of the capillary 16. The lead 4 side of the formed wire 12 is supported by the second wire bending projection 27. When the capillary 16 is further moved downward, the wire 12 between the face portion 33 and the inclined wedge 22 is deformed into a shape along the inclined wedge 22. When the capillary 16 is further moved downward, the upper surface of the wire 12 becomes a shape that conforms to the shape of the face portion 33 and the outer radius portion 35 of the capillary 16, and the lower surface of the wire 12 is pressed against the surface of the inclined wedge 22. The bottom surface of the wire 12 is bonded to the bump 21. At this time, the wire 12 is also pressed onto the plate-shaped wire shear cutting surface 41 formed when the bumps 21 are formed, and the wire shear cutting surface 41 is crushed and joined to the wire 12. Since the surface of the inclined wedge 22, the wire shear cut surface 41, and the wire 12 have a wide bonding area, the bonding property between the wire 12 and the bump 21 is improved.

リード4の側に延びたワイヤ12は硬化した第2ワイヤ折り曲げ凸部27によってサポートされているので、キャピラリ16のフェイス部33とアウタラディウス部35とがワイヤ12を押し下げても、パッド3面に向かって下側に変形しないので、ワイヤ12がリード4又は半導体チップ2と接触することを防止することができる。   Since the wire 12 extending toward the lead 4 is supported by the hardened second wire bending convex portion 27, even if the face portion 33 and the outer radius portion 35 of the capillary 16 push down the wire 12, Since the wire 12 is not deformed downward, it is possible to prevent the wire 12 from contacting the lead 4 or the semiconductor chip 2.

図14(c)に示すように、キャピラリ16の下動によってワイヤ12のバンプ21への接合が終わるとボンディング工程を終了し、ワイヤ押し潰し部形成工程を開始する。キャピラリ16は傾斜ウェッジ22の上面からその先端高さが第1ワイヤ折り曲げ凸部25の上端高さよりも低い位置まで上昇する。   As shown in FIG. 14C, when the bonding of the wire 12 to the bump 21 is finished by the downward movement of the capillary 16, the bonding process is finished, and the wire crushing part forming process is started. The capillary 16 rises from the upper surface of the inclined wedge 22 to a position where the tip height is lower than the upper end height of the first wire bending projection 25.

図14(d)に示すように、キャピラリ16は上昇後、リード4の反対側に向かって、パッド3に略平行に横移動する。先に図12を参照して説明したバンプ21の形成と同様、キャピラリ16をリード4の反対側に向かって横移動させていくと、キャピラリ16のインナチャンファ部31の角部32がワイヤ12に食い込み、角部32のエッジによってワイヤ12が径方向にせん断切断され、せん断切断によって上面が略水平な台地状のワイヤせん断切断面43が形成される。また同時にインナチャンファ部31は第1ワイヤ折り曲げ凸部25との間に挟み込んだワイヤ12を圧縮し、ワイヤ12の連続部分の断面積がワイヤ12の断面積より小さくなっている弓形形状断面を持つワイヤ押し潰し部20を形成する。ワイヤ押し潰し部20を形成するとワイヤ押し潰し部形成工程を終了する。   As shown in FIG. 14 (d), the capillary 16 moves upward and then laterally moves in parallel with the pad 3 toward the opposite side of the lead 4. Similar to the formation of the bump 21 described above with reference to FIG. 12, when the capillary 16 is moved laterally toward the opposite side of the lead 4, the corner portion 32 of the inner chamfer portion 31 of the capillary 16 becomes the wire 12. The wire 12 is cut in the radial direction by the edge of the corner portion 32, and a plate-like wire shear cutting surface 43 having a substantially horizontal upper surface is formed by the shear cutting. At the same time, the inner chamfer portion 31 compresses the wire 12 sandwiched between the first wire bending convex portion 25 and has an arcuate cross section in which the cross-sectional area of the continuous portion of the wire 12 is smaller than the cross-sectional area of the wire 12. The wire crushing portion 20 is formed. When the wire crushing portion 20 is formed, the wire crushing portion forming step is finished.

図13(b),(c)に示すようにワイヤ押し潰し部20の形状、断面は、先に図13を参照して説明したワイヤ押し潰し部30と同様、第1ワイヤ折り曲げ凸部25の外面に沿った弓形形状で、第1ワイヤ折り曲げ凸部25のリード4側に位置している。また、ワイヤせん断切断面43も先に説明したワイヤせん断切断面41と同様、ワイヤ押し潰し部20のリード4側に位置し、リード4の側に凸となった三日月形の平面形状で、その上面はパッド3に略平行で、傾斜ウェッジ22から立ち上がった台地形状となっている。   As shown in FIGS. 13B and 13C, the shape and cross section of the wire crushing portion 20 are the same as those of the wire crushing portion 30 described above with reference to FIG. It has an arcuate shape along the outer surface and is located on the lead 4 side of the first wire bending convex portion 25. Also, the wire shear cutting surface 43 is a crescent-shaped planar shape located on the lead 4 side of the wire crushing portion 20 and convex on the lead 4 side, like the wire shear cutting surface 41 described above. The upper surface is substantially parallel to the pad 3 and has a plateau shape rising from the inclined wedge 22.

図14(e)に示すように、ワイヤ12の一部のせん断切断とワイヤ押し潰し部20の形成が終了したら、キャピラリ16を上昇させてワイヤ切断工程を開始する。この際、図示しないクランパは開放状態にあるので、キャピラリ16の上昇によってキャピラリ16の下にテールワイヤ18が延出される。   As shown in FIG. 14E, when the partial shear cutting of the wire 12 and the formation of the wire crushing portion 20 are completed, the capillary 16 is raised and the wire cutting process is started. At this time, since the clamper (not shown) is in an open state, the tail wire 18 is extended under the capillary 16 by raising the capillary 16.

図14(f)に示すように、テールワイヤ18の長さが次のボールを形成するのに必要な長さになるまでキャピラリ16が上昇すると、図示しないクランパが閉となってワイヤ12を把持してキャピラリ16の上昇と共に上昇する。するとクランパによってワイヤ12が上に向かって引き上げられ、ワイヤ12に張力が掛かる。ワイヤ押し潰し部20はその断面積がワイヤ12の断面積よりも小さくなっているので、ワイヤ12にかかった張力によってワイヤ押し潰し部20には大きな引張り応力が発生する。そして、この引っ張り応力によって、ワイヤ押し潰し部20のところでワイヤ12が引張切断されてワイヤ切断面19が形成される。ワイヤ押し潰し部20の面積が小さくなるように形成されているので、ワイヤ12の引張切断の際にワイヤ12全体にかかる引っ張り力は小さくて済み、ワイヤ12が引張切断された際に、その引張力の反発によってワイヤ12に曲がりが発生することを低減することができる。ワイヤ12が引張切断されると、第1ワイヤ折り曲げ凸部25のリード4側の側面に沿った弓形形状のワイヤ切断面19が形成される。ワイヤ12が切断されるとワイヤ切断工程は終了し、ワイヤボンディングが終了する。   As shown in FIG. 14 (f), when the capillary 16 is raised until the length of the tail wire 18 reaches a length necessary for forming the next ball, a clamper (not shown) is closed and the wire 12 is gripped. Then, the capillary 16 rises with the rise. Then, the wire 12 is pulled upward by the clamper, and tension is applied to the wire 12. Since the cross-sectional area of the wire crushing portion 20 is smaller than the cross-sectional area of the wire 12, a large tensile stress is generated in the wire crushing portion 20 due to the tension applied to the wire 12. Then, by this tensile stress, the wire 12 is pulled and cut at the wire crushing portion 20 to form the wire cut surface 19. Since the area of the wire crushing portion 20 is formed to be small, the pulling force applied to the entire wire 12 when the wire 12 is pulled and cut is small, and when the wire 12 is pulled and cut, the tensile force is reduced. The occurrence of bending in the wire 12 due to the repulsion of force can be reduced. When the wire 12 is pulled and cut, an arcuate wire cutting surface 19 is formed along the side surface of the first wire bending projection 25 on the lead 4 side. When the wire 12 is cut, the wire cutting process is finished and the wire bonding is finished.

以上説明した本実施形態の半導体装置14は、先の参考例と同様、ワイヤ12とバンプ21との間の接合性を向上させると共にワイヤ12の切断性を向上させてボンディング品質の向上を図ることができるという効果を奏する。更に、本実施形態は、先端が細いキャピラリ16によってバンプ形成やワイヤボンディングを行う場合でも、ルーピングワイヤを効果的にサポートしてワイヤ12とバンプ21との間の接合性を向上させることができるという効果を奏する。 The semiconductor device 14 of the present embodiment described above improves the bonding quality between the wire 12 and the bump 21 and improves the cutting property of the wire 12 as well as the previous reference example. There is an effect that can be. Furthermore, this embodiment can effectively support the looping wire and improve the bondability between the wire 12 and the bump 21 even when bump formation or wire bonding is performed by the capillary 16 having a narrow tip. There is an effect.

上記の実施形態では、第1ボンド点のリードフレーム15のリード4よりも高い位置にある第2ボンド点の半導体チップ2のパッド3にバンプ21を形成することとして説明したが、バンプ21は第1ボンド点よりも高い位置に形成しても低い位置に形成してもよく、また、パッド3の上に限らず、リードフレーム15のリード4の上に形成することとしても良い。   In the above-described embodiment, the bump 21 is formed on the pad 3 of the semiconductor chip 2 at the second bond point that is higher than the lead 4 of the lead frame 15 at the first bond point. It may be formed at a position higher or lower than one bond point, and may be formed not only on the pad 3 but also on the lead 4 of the lead frame 15.

本発明の参考例における半導体装置の平面図である。It is a top view of the semiconductor device in the reference example of this invention. 本発明の参考例における半導体装置のリードフレームと半導体チップとの間の接続ワイヤとバンプを示す側面図である。It is a side view which shows the connection wire and bump between the lead frame and semiconductor chip of a semiconductor device in the reference example of this invention. 本発明の参考例における半導体装置の半導体チップの上に形成されたバンプ平面図である。It is a bump top view formed on the semiconductor chip of the semiconductor device in the reference example of the present invention. 本発明の参考例における半導体装置の半導体チップの上にバンプを形成する工程を示す説明図である。It is explanatory drawing which shows the process of forming bump on the semiconductor chip of the semiconductor device in the reference example of this invention. 本発明の参考例における半導体装置のバンプ上面でのワイヤの切断部を示す断面図である。It is sectional drawing which shows the cutting part of the wire in the bump upper surface of the semiconductor device in the reference example of this invention. 本発明の参考例における半導体装置の半導体チップの上のバンプにワイヤを接合する工程を示す説明図である。It is explanatory drawing which shows the process of joining a wire to the bump on the semiconductor chip of the semiconductor device in the reference example of this invention. 本発明の参考例における半導体装置のリードフレームと半導体チップとの間の接続ワイヤとバンプを示す側面図である。It is a side view which shows the connection wire and bump between the lead frame and semiconductor chip of a semiconductor device in the reference example of this invention. 本発明の参考例における半導体装置の半導体チップの上にバンプを形成する工程を示す説明図である。It is explanatory drawing which shows the process of forming bump on the semiconductor chip of the semiconductor device in the reference example of this invention. 本発明の参考例における半導体装置の半導体チップの上のバンプにワイヤを接合する工程を示す説明図である。It is explanatory drawing which shows the process of joining a wire to the bump on the semiconductor chip of the semiconductor device in the reference example of this invention. 本発明の実施形態における半導体装置のリードフレームと半導体チップとの間の接続ワイヤとバンプを示す側面図である。Is a side view showing the connecting wires and bumps between the lead frame and the semiconductor chip of the semiconductor device in the implementation of the invention. 本発明の実施形態における半導体装置の半導体チップの上に形成されたバンプと接続ワイヤを示す平面図である。It is a plan view showing a bump and the connecting wires formed on the semiconductor chip of the semiconductor device in the implementation of the invention. 本発明の実施形態における半導体装置の半導体チップの上にバンプを形成する工程を示す説明図である。Is an explanatory view showing the step of forming a bump on a semiconductor chip of the semiconductor device in the implementation of the invention. 本発明の実施形態における半導体装置のバンプ上面でのワイヤの切断部を示す断面図である。It is a sectional view showing a cutting portion of the wire in the bump upper surface of the semiconductor device in the implementation of the invention. 本発明の実施形態における半導体装置の半導体チップの上のバンプにワイヤを接合する工程を示す説明図である。Is an explanatory view showing the step of bonding the wire to the bumps on the semiconductor chip of the semiconductor device in the implementation of the invention. 従来技術による半導体装置のワイヤの接続工程を示す説明図である。It is explanatory drawing which shows the connection process of the wire of the semiconductor device by a prior art. 従来技術による半導体装置のワイヤの接続工程を示す説明図である。It is explanatory drawing which shows the connection process of the wire of the semiconductor device by a prior art. 従来技術による半導体装置のワイヤの切断を示す説明図である。It is explanatory drawing which shows the cutting | disconnection of the wire of the semiconductor device by a prior art. 従来技術による半導体装置のワイヤの曲がり変形を示す説明図である。It is explanatory drawing which shows the bending deformation of the wire of the semiconductor device by a prior art.

2 半導体チップ、3 パッド、4 リード、5 ボール、6 圧着ボール、12 ワイヤ、14 半導体装置、15 リードフレーム、16 キャピラリ、17 クランパ、18 テールワイヤ、19 ワイヤ切断面、20 ワイヤ押し潰し部、21 バンプ、21a’ バンプワイヤ、21a 第1段バンプ、21b 第2段バンプ、21c 第3段バンプ、22 傾斜ウェッジ、25 第1ワイヤ折り曲げ凸部、27 第2ワイヤ折り曲げ凸部、28 ワイヤ切断面、29 ワイヤ切断面、30,34 ワイヤ押し潰し部、31 インナチャンファ部、32 角部、33 フェイス部、35 アウタラディウス部、37 ストレート孔、41,43 ワイヤせん断切断面。
2 Semiconductor chip, 3 Pad, 4 Lead, 5 Ball, 6 Crimp ball, 12 Wire, 14 Semiconductor device, 15 Lead frame, 16 Capillary, 17 Clamper, 18 Tail wire, 19 Wire cut surface, 20 Wire crushing part, 21 Bump, 21a ′ Bump wire, 21a First step bump, 21b Second step bump, 21c Third step bump, 22 Inclined wedge, 25 First wire bent convex portion, 27 Second wire bent convex portion, 28 Wire cut surface, 29 Wire cutting plane, 30, 34 Wire crushing section, 31 Inner chamfer section, 32 Corner section, 33 Face section, 35 Outer radius section, 37 Straight hole, 41, 43 Wire shear cutting plane.

Claims (8)

第1ボンド点と第2ボンド点との間をワイヤで接続した半導体装置であって、
第2ボンド点上にワイヤを折り曲げ積層して形成され、第1ボンド点と反対側にワイヤ折り曲げ凸部を含むバンプと、
第1ボンド点側からバンプに延びてバンプ上面に接合され、ワイヤ折り曲げ凸部側にせん断切断面とワイヤ断面積よりも断面積が小さい引張切断面とを含むワイヤと、
を有することを特徴とする半導体装置。
A semiconductor device in which a wire is connected between a first bond point and a second bond point,
A bump formed by bending and laminating a wire on the second bond point, and including a wire bending convex portion on the side opposite to the first bond point;
A wire extending from the first bond point side to the bump and bonded to the upper surface of the bump, the wire bending convex portion side including a shear cut surface and a tensile cut surface having a smaller cross-sectional area than the wire cross-sectional area;
A semiconductor device comprising:
第1ボンド点と第2ボンド点との間をワイヤで接続した半導体装置であって、
第2ボンド点上にワイヤを折り曲げ積層して形成され、第1ボンド点側と第1ボンド点と反対側とにワイヤ折り曲げ凸部を含むバンプと、
第1ボンド点側からバンプに延びてバンプ上面に接合され、第1ボンド点と反対側のワイヤ折り曲げ凸部側にせん断切断面とワイヤ断面積よりも断面積が小さい引張切断面とを含むワイヤと、
を有することを特徴とする半導体装置。
A semiconductor device in which a wire is connected between a first bond point and a second bond point,
A bump formed by bending and laminating a wire on the second bond point, and including a wire bending convex portion on the first bond point side and the opposite side of the first bond point;
A wire that extends from the first bond point side to the bump and is bonded to the upper surface of the bump, and includes a shear cut surface and a tensile cut surface having a smaller cross-sectional area than the wire cross-sectional area on the side of the wire bending convex portion opposite to the first bond point When,
A semiconductor device comprising:
請求項1又は2に記載の半導体装置であって、
バンプは、第1ボンド点側の上面にあって第1ボンド点から第2ボンド点に向かう方向に沿って高さが低くなる傾斜面を含む傾斜ウェッジを含み、
ワイヤは、傾斜ウェッジに沿ってバンプ上面に接合されていること、
を特徴とする半導体装置。
The semiconductor device according to claim 1 or 2 ,
The bump includes an inclined wedge including an inclined surface on the upper surface on the first bond point side and having a height that decreases along the direction from the first bond point toward the second bond point,
The wire is bonded to the top surface of the bump along an inclined wedge;
A semiconductor device characterized by the above.
請求項に記載の半導体装置であって、
バンプは、第1ボンド点側のワイヤ折り曲げ凸部に隣接してその上面に設けられ第1ボンド点から第2ボンド点に向かう方向に沿って高さが低くなる傾斜面を含む傾斜ウェッジを含み、
ワイヤは、傾斜ウェッジに沿ってバンプ上面に接合されていること、
を特徴とする半導体装置。
The semiconductor device according to claim 2 ,
The bump includes an inclined wedge that includes an inclined surface that is provided on the upper surface adjacent to the wire bending convex portion on the first bond point side and has a height that decreases along the direction from the first bond point to the second bond point. ,
The wire is bonded to the top surface of the bump along an inclined wedge;
A semiconductor device characterized by the above.
請求項1から4のいずれか1項に記載の半導体装置であって、
せん断切断面は第2ボンド点を含む半導体装置の面に略平行で、引張切断面は弓形断面形状であること
を特徴とする半導体装置。
The semiconductor device according to any one of claims 1 to 4 , wherein
A semiconductor device, wherein the shear cut surface is substantially parallel to the surface of the semiconductor device including the second bond point, and the tensile cut surface has an arcuate cross-sectional shape.
半導体装置の第1ボンド点と第2ボンド点との間をワイヤで接続するワイヤボンディング方法であって、
第2ボンド点上にワイヤを折り曲げ積層し、第1ボンド点と反対側にワイヤ折り曲げ凸部を含むバンプを形成するバンプ形成工程と、
第1ボンド点からバンプに向かってワイヤをルーピングし、キャピラリ先端のフェイス部によってワイヤをバンプ上面に押し付けてワイヤを接合するボンディング工程と、
バンプ上面から先端高さがワイヤ折り曲げ凸部上端高さよりも低い位置までキャピラリを上昇させた後、キャピラリを第1ボンド点からワイヤ折り曲げ凸部に向かう方向に移動させ、キャピラリの角部によってワイヤの一部をせん断切断すると共に、キャピラリのインナチャンファ部によってワイヤをワイヤ折り曲げ凸部に押し付けてワイヤ断面積よりも断面積が小さいワイヤ押し潰し部を形成するワイヤ押し潰し部形成工程と、
ワイヤを引き上げてワイヤ押し潰し部においてワイヤを切断するワイヤ切断工程と、
を有することを特徴とするワイヤボンディング方法。
A wire bonding method for connecting a first bond point and a second bond point of a semiconductor device with a wire,
A bump forming step of bending and laminating the wire on the second bond point, and forming a bump including a wire bending convex portion on the side opposite to the first bond point;
Looping the wire from the first bond point toward the bump, and bonding the wire by pressing the wire against the upper surface of the bump by the face portion at the tip of the capillary;
After raising the capillary from the bump upper surface to a position where the tip height is lower than the upper end height of the wire bending convex portion, the capillary is moved in the direction from the first bond point to the wire bending convex portion, A wire crushing portion forming step of forming a wire crushing portion having a cross-sectional area smaller than the wire cross-sectional area by shearing and cutting a part and pressing the wire against the wire bending convex portion by the inner chamfer portion of the capillary;
A wire cutting step of pulling up the wire and cutting the wire at the wire crushing portion;
A wire bonding method characterized by comprising:
半導体装置の第1ボンド点と第2ボンド点との間をワイヤで接続するワイヤボンディング方法であって、
第2ボンド点上にワイヤを折り曲げ積層して第1ボンド点と反対側にワイヤ折り曲げ凸部を形成し、
キャピラリ先端のフェイス部によってワイヤを押し付けて第1ボンド点側の上面に傾斜ウェッジを形成し、
傾斜ウェッジ上面から先端高さがワイヤ折り曲げ凸部上端高さよりも低い位置までキャピラリを上昇させた後、キャピラリを傾斜ウェッジからワイヤ折り曲げ凸部に向かう方向に移動させ、キャピラリの角部によってワイヤの一部をせん断切断すると共に、キャピラリのインナチャンファ部によってワイヤをワイヤ折り曲げ凸部に押し付けてワイヤ断面積よりも断面積が小さいワイヤ押し潰し部を形成し、
ワイヤを引き上げてワイヤ押し潰し部においてワイヤを切断するバンプ形成工程と、
第1ボンド点からバンプに向かってワイヤをルーピングし、キャピラリ先端のフェイス部によってワイヤを傾斜ウェッジ上面に押し付けてワイヤを接合するボンディング工程と、
傾斜ウェッジ上面から先端高さがワイヤ折り曲げ凸部上端高さよりも低い位置までキャピラリを上昇させた後、キャピラリを傾斜ウェッジからワイヤ折り曲げ凸部に向かう方向に移動させ、キャピラリの角部によってワイヤの一部をせん断切断すると共に、キャピラリのインナチャンファ部によってワイヤをワイヤ折り曲げ凸部に押し付けてワイヤ断面積よりも断面積が小さいワイヤ押し潰し部を形成するワイヤ押し潰し部形成工程と、
ワイヤを引き上げてワイヤ押し潰し部においてワイヤを切断するワイヤ切断工程と、
を有することを特徴とするワイヤボンディング方法。
A wire bonding method for connecting a first bond point and a second bond point of a semiconductor device with a wire,
Bending and laminating the wire on the second bond point to form a wire bending convex part on the side opposite to the first bond point,
The wire is pressed by the face part at the tip of the capillary to form an inclined wedge on the upper surface on the first bond point side,
After raising the capillary from the upper surface of the inclined wedge to a position where the tip height is lower than the upper end height of the wire bending convex portion, the capillary is moved in a direction from the inclined wedge toward the wire bending convex portion, and one end of the wire is moved by the corner of the capillary. The part is shear cut and the inner chamfer part of the capillary presses the wire against the wire bending convex part to form a wire crushing part having a smaller cross-sectional area than the wire cross-sectional area,
A bump forming step of lifting the wire and cutting the wire at the wire crushing portion;
Looping the wire from the first bond point toward the bump, and bonding the wire by pressing the wire against the upper surface of the inclined wedge by the face portion at the tip of the capillary;
After raising the capillary from the upper surface of the inclined wedge to a position where the tip height is lower than the upper end height of the wire bending convex portion, the capillary is moved in a direction from the inclined wedge toward the wire bending convex portion, and one end of the wire is moved by the corner of the capillary. A wire crushing part forming step of forming a wire crushing part having a cross-sectional area smaller than the wire cross-sectional area by pressing the wire against the wire bending convex part by the inner chamfer part of the capillary while shear cutting the part,
A wire cutting step of pulling up the wire and cutting the wire at the wire crushing portion;
A wire bonding method characterized by comprising:
請求項6又は7に記載のワイヤボンディング方法であって、
せん断切断された面は第2ボンド点を含む半導体装置の面に略平行で、ワイヤ押し潰し部は、弓形断面形状であること
を特徴とするワイヤボンディング方法。
The wire bonding method according to claim 6 or 7 ,
The wire-bonding method, wherein the shear-cut surface is substantially parallel to the surface of the semiconductor device including the second bond point, and the wire crushing portion has an arcuate cross-sectional shape.
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