TW200836277A - Semiconductor device and wire bonding method - Google Patents

Semiconductor device and wire bonding method Download PDF

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Publication number
TW200836277A
TW200836277A TW96133696A TW96133696A TW200836277A TW 200836277 A TW200836277 A TW 200836277A TW 96133696 A TW96133696 A TW 96133696A TW 96133696 A TW96133696 A TW 96133696A TW 200836277 A TW200836277 A TW 200836277A
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TW
Taiwan
Prior art keywords
lead
contact
bump
wire
capillary
Prior art date
Application number
TW96133696A
Other languages
Chinese (zh)
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TWI456672B (en
Inventor
Tatsunari Mii
Toshihiko Toyama
Hiroaki Yoshino
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Shinkawa Kk
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Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Publication of TW200836277A publication Critical patent/TW200836277A/en
Application granted granted Critical
Publication of TWI456672B publication Critical patent/TWI456672B/en

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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Description

200836277 九、發明說明： 【發明所屬之技術領域】 本發明，係有關半導體裝置之構造及打線方法。 【先前技術】 在1C等半導體裝置之組裝步驟中，具有以引線連接半 導體晶片與導線架（lead f職e)間之打線步驟。在打線步驟 中，一般所使用之方法為，使用插通有引線之毛細管，藉 f 由電漿矩之放電而在突出於毛細管之引線的前端形成球 體’使毛細管位在半導體晶片之墊部（pad)上而進行i次接 合’之後將毛細管移動至導線架的導線上而進行2次接人， 俾以引線連接半導體晶片與導線架之間（例如，參照專敎 獻1) 〇 在此情形的引線多使用金線。金與相同材料的金之間， 雖具有良好接合性，然而，其與銅、錄、化學鍛金等材料 =間的接合性不#，假使墊部或導線之材料係使用例如 2、錄、化學鍍金等與金線間的接合性不佳的材料，則在 部或導線上無法直接接合金線。因此，所使用之方法為， 在墊部或導線上使用金線以球體 ' 線接合於凸塊上。 A體接“7成凸塊，然後將金 塊上精1可將金線接合於相同材料的金所形成之凸 良好接人性轉合性變佳，而能提升由與金之間不且 块之材料所形成的墊部或導線與金之接合性能。 人而#疋金線在凸塊上面並無足夠的傾 合，會發生因接合面積不足導致接合不良，以 6 200836277 塊與金線後金線朝下變形而與導線架或半導體晶片$間接 觸之問題。 此處，在專利文獻1、2所載之習知技術中，為了要在 凸塊上面形成足夠金線接合的傾斜與平面，乃提出在球體 接合後將毛細管緊壓於凸塊上面以形成傾斜楔形（wedge) 邓，然後將金線接合於該凸塊上之傾斜楔形部之方法。 該方法，例如圖15(a)所示，有一打線方法之例，係在 半導體晶片2之墊部3之上，以傾斜楔形部22之傾斜面 方向朝向導線4的反向侧之方式，形成由帛】段凸塊… 與第2段凸塊21b構成之凸& 21，在引線i2的前端，藉 由對引線12之火花放電等方式而形成球體5。繼而，如圖 剛所示，將球體5緊壓於導線4上以進行！次接合而形 成壓接球6,如圖15⑷所示，將毛細管16由導線4朝塾 部3移動以使引線12弧形前進，再將引線12緊塵於凸塊 21之傾斜楔形部22以進行2次接合後切斷引線&又有 :圖16所示之方法，係在導線4之上形成具有傾斜楔形 口 22之凸塊21、並使其傾斜面方向朝向半導體晶片2之 相反方向，在半導體晶片2之墊部3 壓接球6後，使引線丨2鉑道 人口以形成 、’ 朝V線4弧形前進以在凸塊2 1之 傾斜楔形部22之上進行2吹接八 係vn 仃2久接合。猎此方法，由於引線12 的：人 之傾斜楔形部22而接合，故傾斜楔形部22 的接ΰ面積變大而提升接人 斜楔形部2… 由於引線12係受傾 #，故能防止引線12與半導體晶片戋導後 架1 5之接觸。 夺®日日乃：¾ V線 200836277200836277 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a structure and a wire bonding method of a semiconductor device. [Prior Art] In the assembly step of a semiconductor device such as 1C, there is a wiring step of connecting a semiconductor wafer and a lead frame with a lead wire. In the wire bonding step, generally, the method is to use a capillary tube through which a lead wire is inserted, and a ball is formed at a front end of a lead protruding from the capillary tube by the discharge of the plasma moment, so that the capillary is positioned on the pad portion of the semiconductor wafer ( After the i-joining is performed on the pad, the capillary is moved to the lead of the lead frame and the connection is made twice, and the semiconductor wafer and the lead frame are connected by wires (for example, refer to the special 1). The lead wire is mostly made of gold wire. Although gold has good bonding property with gold of the same material, its bonding property with materials such as copper, recording, and chemical forging is not #, if the material of the pad or wire is used, for example, 2, recording, chemistry A material that is poorly bonded to a gold wire such as gold plating cannot directly bond a gold wire to a portion or a wire. Therefore, the method used is to use a gold wire on the pad or wire to bond the ball to the bump. A body is connected with "7 into bumps, and then the gold on the gold block can be joined to the gold of the same material to form a convex good joint transferability, and can improve between the gold and the gold. The bonding strength of the pad or wire formed by the material to the gold. The #疋金线 does not have sufficient tilt on the bump, and the joint failure occurs due to insufficient joint area. 6 200836277 Block and gold wire after gold The problem that the wire is deformed downward to come into contact with the lead frame or the semiconductor wafer $. Here, in the prior art disclosed in Patent Documents 1 and 2, in order to form a sufficient inclination and plane of the gold wire bonding on the bump, A method of pressing a capillary against a bump after the ball is joined to form a wedge, and then joining the gold wire to the inclined wedge on the bump. The method is, for example, Figure 15(a) As an example, there is a wire bonding method which is formed on the pad portion 3 of the semiconductor wafer 2 so as to face the opposite side of the wire 4 in the direction of the inclined surface of the inclined wedge portion 22, and the second bump is formed... The segment bump 21b constitutes a convex & 21, at the lead i2 At the front end, the sphere 5 is formed by spark discharge of the lead 12, etc. Then, as shown in the figure, the sphere 5 is pressed against the wire 4 to perform the bonding to form the crimping ball 6, as shown in Fig. 15 (4). It is shown that the capillary tube 16 is moved from the wire 4 toward the crotch portion 3 to advance the lead wire 12 in an arc shape, and then the lead wire 12 is tightly dusted on the inclined wedge portion 22 of the bump 21 to perform the second joining and then the lead wire is removed. The method shown in Fig. 16 is such that a bump 21 having an inclined wedge-shaped opening 22 is formed on the wire 4 with its inclined surface direction facing the opposite direction of the semiconductor wafer 2, and the ball 6 is crimped on the pad portion 3 of the semiconductor wafer 2. After that, the lead 丨2 platinum channel population is formed to form a 'curve toward the V line 4 to perform 2 blows over the inclined wedge portion 22 of the bump 2 1 for a long-time joint. The lead 12 of the lead 12 is joined by the inclined wedge portion 22, so that the joint area of the inclined wedge portion 22 is increased to raise the access wedge portion 2... Since the lead 12 is tilted, the lead 12 and the semiconductor wafer can be prevented. Guide post 1 5 contact. Capture® day is: 3⁄4 V line 200836277

V 另一方面’在打線步驟之引線切斷時，會有在引線前 端發生彎曲的問題。因而，會有在接合後連接之引線發生 S字形彎曲，而使相鄰的連接引線彼此接觸等不良狀況發 生的問題。針對於此，已有提出例如下述之方法：參照專 利文獻3，係在將引線上拉而予切斷之前，使毛細管與夾 持構件的位置橫向移動，然後將形成較細之引線壓潰部上 拉而切斷之；以及如專利文獻4，係在打開夾持構件以導 「A引線尾段後，以引線尾段之固有振動數使毛細管振動進 而使引線尾段共振，俾在形成較細的引線壓潰部將引線切 斷’以防止在切斷引線時發生引線彎曲。 (專利文獻1)曰本專利第357055 1號說明書 ^ (專利文獻2)日本特開2004-247672號公報 ； (專利文獻3)曰本專利第2723277號說明書 • (專利文獻4)曰本專利第2969953號說明書 r ... 【發明内容】On the other hand, when the lead of the wire bonding step is cut, there is a problem that the leading end of the wire is bent. Therefore, there is a problem in that the lead wires connected after the bonding are bent in a S-shape, and the adjacent connecting leads are brought into contact with each other. In view of this, a method such as the following method has been proposed. Referring to Patent Document 3, the position of the capillary and the holding member is laterally moved before the lead is pulled and cut, and then the thinner lead is crushed. The part is pulled up and cut off; and as in Patent Document 4, after the clamping member is opened to guide the "A lead tail section, the capillary is vibrated by the natural vibration number of the tail end section to resonate the lead tail section, and the crucible is formed. The thinner lead crimping section cuts the lead wire to prevent the lead wire from being bent when the lead wire is cut. (Patent Document 1) Japanese Patent Laid-Open No. 357055 No. (Patent Document 2) Japanese Patent Laid-Open Publication No. 2004-247672 (Patent Document 3) Japanese Patent No. 2723277 (Patent Document 4) 曰 Patent No. 2969953 specification r ... [Summary of the Invention]

I 然而，如圖17所示，將引線12接合至凸塊21上的傾 7模形部22以增加引線12與凸塊21的接合面積時，引 線12與凸塊21間之引線壓潰部20的剖面形狀，會有無 法細化的情形。在此情形，在專利文獻3所載之習知技術 中’以夾持構件17夾持引線12並將引線12上拉時，係 對弓」線12賦與較大的張力，並且是在引線12成為被拉伸 狀恶之後在較粗的引線壓潰部2〇被切斷，因此，會因被 伸的引線1 2在被切斷時的反作用力而會朝上彈跳，弯 8 200836277 曲成S字形。引線12的彎曲，會在之後接合至墊部3時 因放電等原因導致球體形成狀況不佳，以及，會因毛細管 1 6的内部及毛細管i 6與夾持構件丨7之間殘留之彎曲引線 =仃的接合，而發生如圖18所示之連接引線12彎曲成S 字形，造成相鄰的連接引線12彼此接觸等不良狀況。 又，在專利文獻4所載之習知技術中，為了要切斷粗 ^引線壓潰部20，必須要施加長時間的超音波振動，其問 題點在於，由於係利用引線12延伸至從毛細管16至接合 ”、占間之引線尾段1 8的共振，短的引線尾段並不適用，因 而不能對應於引線尾段較短之高速接合裝置。 如上述，在以引線12連接與引線接合性不佳之金屬材 ,=所形成之半導體晶片2之墊部3、或導線架15之導線4 ；時，為了要提升接合性，而形成其形狀能有良好接合性之 •凸 >鬼2 1這與接合至凸塊2 1後的引線12之切斷性相反， _在習知技術中的問題點在於，在提高接合性後則引線12 的切斷性變差，而使引線丨2發生彎曲。 本發明之目的在於提高引線與凸塊間之接合性，提高 引線的切斷性，以謀求提高接合品質。 本發明係一種半導體褒置，藉引線連接帛1接點與第 2接點之間，其特徵在於，具備：凸塊，係在第2接點上 將引線彎折積層而形成，於第1接點之反向侧包含引線彎 折凸部；以及引線，係從第1接點側向凸塊延伸而接合於 凸塊上面，於引線彎折凸部側包含剖面積小於引線剖面積 9 200836277 本發明係一種半導體裝置，藉引線連接f 1接點與第 2接點之間’其特徵在於，具備：凸塊’係在第2接點上 將引線彎折積層而形成，於第i接點側、第i接點之反向 側包含引線彎折凸部；以及引線，係從第i接點側向凸塊 延伸而接合於凸塊上面，於第1接點之反向側之引線彎折 凸部側包含剖面積小於引線剖面積的剖面。 又’本發明之半導體裝置中’較佳為，凸塊係在第2 接點上將引線彎折積層而形成’在上面具有含傾斜面之傾 斜楔形部；引線係沿傾斜楔形部而接合於凸塊上面；傾斜 楔形部之較佳者，係從第i接點沿朝向第2接點之方㈣ 高度漸低之傾斜面；剖面較佳係呈弓形剖面形狀。 本發明係一種丰導體梦番，ϋ ?丨+ 裡千寺骽衣置，猎引線連接第丨接點與第 2接點之間，其特徵在於，具備：凸塊，係'在帛2接點上 將引線彎折積層而形成，於第1接點之反向側包含引” 折凸部；以及引線，係從第2接點側向凸塊延伸而接合於 凸塊上面，於引線彎折凸部側包含剪斷剖面與剖面積小於 引線剖面積之拉伸剖面。 本發明係一種半導體裝置，藉引線連接第i接點與第 2接點之間，其特徵在於，具備··凸塊，係在第2接點上 將引線彎折積層而形成，於第！接點側、第i接點之反向 侧包含引線彎折凸部；以及引線，係從第！接點側向凸塊 延伸而接合於凸塊上面’於第i接點之反向侧之引線彎折 凸部側包含剪斷剖面與剖面積小於引線剖面積之拉伸剖 面0 200836277 “明之半導體裝置，較佳為，凸塊包含位在第 上面之傾斜换形部’該傾斜換形部包含沿從第 斜楔形部接合於凸塊上面;較佳為，凸塊包含二: 接...占侧之引線芳折凸部且設置在其上面之傾斜椒形部，該 傾斜楔形部包含沿從第丨 〇Λ =1大 傾斜楔形部接合於凸塊上面;較佳為， 平行於包含第2接點之半導體裝置之面，拉 伸剖面呈弓形剖面形狀。 本發明之打線方法，将 接點與第2接點之間，體裝置之第1 ^ /、特徵在於，具有以下步驟··凸塊 :及二二係在第2接點上將引線彎折積層，於第1接點 » _成含有引線f折凸部的凸塊；接 引線從第1技赴細1 % 乐肿 在m 形前進，使毛細管之内導角部位 單於凸：广上部，#由毛細管前端之平面部將引線緊 ==以接合引線’且藉由内導角部將引線緊壓於 心以形成剖面積小於引線剖面積之引線壓潰 口丨’以及今|線切斷步 引線切斷。又太於係將引線上拉並在引線壓潰部將 牛驟勺幻打線方法中’較佳為，凸塊形成 :稽：：形部形成步驟，係在第2接點上將引線弯 部；前端之平面部緊壓引線以形成傾斜楔形 遷、生邱/驟係將引線緊虔於傾斜楔形部以接合；引線 貝錢佳係呈弓形剖面形狀。 本1明之打線方法，係以引線連接半導體裝置之第1 200836277 接點與第2接點之間，其特徵在於，具有以下步驟：凸塊 形成步驟，係在第2接點上將引線彎折積層，於第丨接點 之反向側形成含有引線彎折凸部的凸塊；接合步驟，係將 引線從第1接點朝凸塊弧形前進，藉毛細管前端之平面部 將引線緊壓於凸塊上面以接合引線；引線壓潰部形成步 驟，係將毛細管從凸塊上面上升至前端高度低於引線彎折 凸部上端高度後，將毛細管從第丨接點朝引線彎折凸部之 方向移動，藉毛細管之角部將引線之一部分予以剪斷，且 藉由毛細管之内導角部將引線緊壓於引線彎折凸部，形成 剖面積小於引線剖面之引線壓潰部；以及引線切斷步驟， 係將引線上拉並在引線壓潰部將引線切斷。 本發明之打線方法，係以引線連接半導體裝置之第工 接點與第2接點之間，其特徵在於，具備以下步驟··凸塊 形成步驟’係在第2接點上將引線彎折積層而在第！接點 之反向側：成引線彎折凸部，藉毛細管前端之平面部緊壓 引線以在第1接點側之上面形成傾斜楔形部，將毛細管從 傾斜楔形部上面上升至前端高度低於引線彎折凸部上端高 度後，將毛細管從傾斜楔形部朝引線彎折凸部之方向移 動丄藉毛細管之角部將引線之一部分予以剪斷，且藉由毛 細管之内導角部將引線緊壓於引線f折凸冑，形成剖面積 小於引線剖面積之引線壓潰部m拉並在引線壓潰 料引線切斷；接合步驟，係將引線從第1接點朝凸塊弧 形丽進’ ϋ由毛細管前端之平面部將引線緊壓於傾斜楔形 部上面以接合引線；引線壓潰部形成步驟，係將毛細管從 12 200836277 傾斜楔形部上面上升至前端高度低於引線彎折凸部上端高 度後，將毛細管從傾斜楔形部朝引線彎折凸部之方向移 動，藉毛細管之角部將引線之一部分予以剪斷，且藉由毛 細管之内導角部將引線緊壓於引線彎折凸部，形成剖面積 小於引線剖面積之引線壓潰部；以及引線切斷步驟，係將 引線上拉並在引線壓潰部將引線切斷。 又，本發明之打線方法中，較佳係，被剪斷之面，大 致平行於包含第2接點之半導體裝置之面；引線壓潰部呈 弓形剖面形狀。 本發明，能發揮提高引線與凸塊間之接合性，提高引 線的切斷性，以謀求提高接合品質的效果。 【實施方式】 以下參照圖式說明本發明之較佳實施形態。 (實施例1) 如圖1所示，本發明之實施形態之半導體裝置14具備： 設有導線4之導線架15、以晶片接合方法安裝於 上之半導體晶片2、在形成於半導體晶片2之上的塾部3 上所形成之凸& 2卜以及用以連接導線4與凸塊21之引 線12。料12係從壓接球6(其係藉由接合而形成於導線 4之上）朝凸塊21繞弧形而被接合。引線12係金線，塾部 3、導線4則是由銅令化學鍍金等與金的接合性不佳 的材料所構成。 如圖2所示’在墊部3之上形成的凸塊。，係將引線 13 200836277 12弓折積層而構成’且由墊部3之面起，依序具備：第】 段凸塊21a，係由壓接球6與被緊壓於其上之凸塊引線^ 所構成’第1引線、曾折凸部25，係形成於導線4之反方向； 第2段凸塊21b，係由第1段凸塊之上緊壓引線12而形成； 第2引線彎折凸部27，係形成於導線4之側；凸塊上面之 傾蚪“开"P 22，以及引線剖面29，其係在彎折引線以 形成凸塊21日守用以切斷引線12。引線12係在第工接點所 在之導線4之上進行i次接合以形成壓接球6之後，朝凸 塊21弧形前進，以接合於第2接點所在、即形成於墊部3 之凸塊21之上面的傾斜楔形部22 ;形成於凸塊21中導線 4之反方向之第i引線彎折凸部25之側，具備有引線剖面 19 〇 凸塊21的上面在中央呈凹部，沿引線12之連接方向 之兩側有第1、第2引線彎折凸部25、27呈上凸形狀。傾 斜4六形部22所形成之傾斜平面，係從中央凹部朝向第工 接點所在之導線4側的第2引線彎折凸部27傾斜。如上 述，傾斜楔形部22之傾斜，係在第丨接點所在之導線4 之側高度較高，從第1接點沿著第2接點之墊部3侧之方 向則南度漸低。引線12係沿著該傾斜楔形部22之面接 合。 在凸塊2 1的上面’具備有從中央凹部朝第1引線彎折 凸部25(其位在第1接點所在之導線4之反向侧）高度漸高 的斜面。沿著該第1引線彎折凸部25，具有形成凸塊時之 引線剖面29，以及打線時之引線剖面19。 200836277 圖3係接合於凸 示，凸塊2i之第;之引線12之俯視圖。如圖3所 導線4的反方向伸出!彎折凸部25’朝第1接點所在之 所在之導線4的方向仲：2引線、“斤凸部27 ’朝第1接點 中出。由圖1與圖2可以了解，第1 引線弯折凸部25 ’解弟1 起形狀；第2弓丨”拆1之上面之大致半圓球突 今义/ 線、.弓折凸部27位在第1接點所在之導線4 之側，係朝向凸塊2〗μ 、 ^〆 1上面之部分圓球突起形狀，其反向 側係傾斜模形部22的傾斜面。 ，、反白 各引線剖面1 9、2 Q2 π/ a » 的引線剖面29,可位在 成凸塊時之引線12 在打線日守引線12之引線剖面19與第 1引線％折凸部25夕μ . _ ^ 之間，亦可在引線剖面19之下侧而位 在引線剖面19與第2凸塊21b之間。 在况明凸塊21之形成動作前，先說明毛細管μ的構 f。如圖4所示，毛細管16具有内導角加咖chamfer)部 31、平面（face)部33、外庐邱K 士， 外铋邛35、及直孔37,係由陶瓷等 石貝材料所構成。平面部33係設置在毛細管16的前端面， 乃是相對於墊部3保有微小角度之平面，藉由該平面，可 將形成於引線12前端之球體5或已f折之引線12朝半導 體晶片2的墊部3麼接。直孔37係插通有引線η，且内 握稍大於設置在毛細管16中心之力線12外徑之貫通孔。 内導角部31係設置在直孔37與平面部％之間之錐面孔， 朝平面部33而漸寬。内導角部Μ在接合當中將球趙5朝 塾部3緊m時，能將球體朝直徑方向麗縮而形成整接球6。 又’内導角部31在與平面部33之間具有角部32。由於平 15 200836277 v 面部33具有相對於墊部3之微小角度，在將毛細管μ之 平面邠33朝引線丨2緊壓之際，在内導角部31與平面部33 之間的角部32會深入引線12。 以下參照圖4，以說明在本實施形態之半導體裝置14 之半導體晶片2的墊部3形成凸塊21之步驟。凸塊η係 猎由未圖示之打線裝置，使插通有引線12之接合工具（即 毛細管16)經上下左右動作而形成。 如圖4(a)所示，毛細管16在將形成於引線12前端之 球體朝塾部3緊壓以形成壓接球6之後，邊上升邊朝圖中 之右向、即第1接點所在之導線4之反方向移動。毛細管 16朝橫向移動後，引線12係藉由壓接球6而接合於墊部 3,因此使毛細管16之内導角部31抵接於引線12的外面， : 引線12朝毛細管16之橫向移動方向發生彎曲變形。又， : 毛細管16係橫向移動到導線4侧之平面部33到達壓接球 6的中心位置為止，以使引線12進入平面部33與壓接球 6之間。 ” 、，如圖4(b)所示’毛細管16往下移動，藉由導線4側之 平面部33，將位在導線4側之平面部33與壓接球6間之 弓1線U朝塾部3之面緊壓。引線12被壓接球⑽壓而形 =為扁平形狀之凸塊引線21a，。藉由壓接球6與形成為扁 、、狀之凸塊引線21a’，形成第i段凸塊。又，插通 /毛、、田& 16之引線12與第丨段凸塊2丨a，在凸塊21之導 線4之反向側連續，該引線12之連續部分，被毛細管η 之内導角部朝下側緊壓，因而使引線。沿内導角部η 16 200836277 之錐面形狀成形。藉此，引線12之形狀成為，以毛細管μ 之直孔37與引線12間之餘隙（clearance)循導線4之反向 側往上傾斜、且受直孔37導引。 如圖4(C)所示，毛細管16在形成第1段凸塊21a之後 上升，朝著與先前橫向動作成反方向之導線4側移動。藉 由毛細管16的橫向移動，使毛細管16之内導角部31抵 接於引線12的外面。由於在形成有第i段凸塊2ι&之狀態 下，引線12係朝導線4之反向側傾斜，因此，位在平面 部與帛！段凸塊2U之間的引線12，會因為毛細管μ 的橫向移動，而從導線4的反向側朝導線4之側彎折，形 成第1引線_折凸部25。繼而，毛細管16朝導線4側橫 向私動，直到導線4反向側之平面部33到達第i段凸塊2工& 之大致中央位置為止。 ,如圖4(d)所示，在毛細管16的橫向移動後，毛細管16 往下和動，藉由導線4之反向侧之平面部33，將位於平面 # 33與第1段凸塊2ia之間之引線12朝墊部3緊壓。引 、乳12又第丨段凸塊2丨a擠壓而成為扁平形狀，且被壓接於 第1 4又凸塊21a而形成第2段凸塊21b。由於第1段引線 弓折凸部25偏離毛細管16之平面部33，故不會因毛細管 16向下移動而被推向墊部3的方向，而是在第2段凸塊2比 之V線4的反向側形成朝上凸起之大致半圓球形狀。又， 第1引線彎折凸部25，受毛細管丨6下移而形成第2段凸 鬼21 b所影響而被彎折大約180度。因此，第1引線彎折 凸邛25因彎折而加工硬化，因而硬度高於其他部分。又， 17 200836277 插通於毛細管16之引線12與第2段凸塊21b，在凸塊2ι 之導線4側連續，該引線12之連續部分，被毛細管16之 内導角部3"月下側緊壓，因而沿著内導角部31之錐面形 狀而形成引線12。藉此，引線12之形狀成為，以毛細管 16之直孔37與引線12間之餘隙循導線4側往上傾斜、且 受直孔37導引。I, however, as shown in FIG. 17, when the lead 12 is bonded to the inclined 7-shaped portion 22 on the bump 21 to increase the bonding area of the lead 12 and the bump 21, the lead crush portion between the lead 12 and the bump 21 The cross-sectional shape of 20 may not be refined. In this case, in the conventional technique disclosed in Patent Document 3, when the lead 12 is held by the holding member 17 and the lead 12 is pulled up, the bow 12 is given a large tension and is in the lead. 12 becomes a stretched evil and is cut at the thicker lead crushing portion 2, and therefore, the lead wire 12 that is stretched will bounce upward when it is cut, and the bend 8 200836277 Into the S shape. The bending of the lead 12 may result in poor ball formation due to discharge or the like when it is joined to the pad portion 3, and may be due to the inside of the capillary 16 and the bent lead remaining between the capillary i 6 and the holding member 丨7. = bonding of the crucible, and the connection lead 12 shown in Fig. 18 is bent into an S-shape, causing a problem that the adjacent connection leads 12 are in contact with each other. Further, in the conventional technique disclosed in Patent Document 4, in order to cut the thick wire crimping portion 20, it is necessary to apply ultrasonic vibration for a long time, and the problem is that the wire 12 extends to the capillary tube. The resonance of the 16-to-bond, intervening lead tail segment 18, the short lead tail segment is not suitable, and thus cannot correspond to a short high-speed bonding device of the lead tail segment. As described above, the wire 12 is connected and wire bonded a metal material of a poor quality, = a pad portion 3 of the formed semiconductor wafer 2, or a wire 4 of the lead frame 15; in order to improve the bonding property, a shape thereof can be formed with good bonding properties. 1 This is contrary to the cuttability of the lead 12 after being bonded to the bump 2, which is a problem in the prior art in that the cuttability of the lead 12 is deteriorated after the adhesion is improved, and the lead 丨 2 is made The purpose of the present invention is to improve the bondability between the lead and the bump, and to improve the cuttability of the lead to improve the bonding quality. The present invention is a semiconductor device in which a contact and a second connection are connected by a lead wire. Between points, characterized by The bump is formed by bending a lead wire at a second contact, and includes a lead bent convex portion on a reverse side of the first contact; and a lead extending from the first contact side toward the bump Bonded to the upper surface of the bump, including a cross-sectional area on the side of the bent portion of the lead, which is smaller than the cross-sectional area of the lead wire. 9200836277 The present invention relates to a semiconductor device in which a connection between the f1 contact and the second contact is connected by a lead wire, which is characterized in that: The bump ' is formed by bending a lead wire at a second contact, and includes a lead bent convex portion on the opposite side of the i-th contact side and the i-th contact; and a lead wire from the i-th contact side The side of the lead bending convex portion on the opposite side of the first contact includes a cross section having a cross-sectional area smaller than the cross-sectional area of the lead wire. Further, in the semiconductor device of the present invention, it is preferable that the bump is extended to the bump. The bumps are bent at the second joint to form a 'declining wedge portion having an inclined surface thereon; the lead is bonded to the upper surface of the bump along the inclined wedge portion; preferably, the inclined wedge portion is Inclined surface from the i-th contact along the side of the second contact (four) Preferably, the cross section has an arcuate cross-sectional shape. The present invention is a Fengtian conductor, a ϋ 丨 里 里 骽 , , , , , , , , , 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎 猎The bump is formed by bending a lead at a contact of the 帛2, and includes a bent portion on a reverse side of the first contact; and a lead extending from the second contact side to the bump Bonded to the upper surface of the bump, the side of the bent portion of the lead includes a tensile profile having a shear profile and a cross-sectional area smaller than the cross-sectional area of the lead. The present invention relates to a semiconductor device in which a lead wire is connected between an i-th contact and a second contact, and is characterized in that a bump is provided, and a lead is bent and laminated on the second contact, and is formed in the first! The opposite side of the contact side and the i-th contact includes the lead bent convex portion; and the lead wire is from the first! The contact lateral bump extends and is bonded to the upper surface of the bump. The side of the lead bending convex portion on the opposite side of the i-th contact includes a shear profile and a cross-sectional area smaller than the cross-sectional area of the lead. 0 200836277 "Mingzhi Semiconductor Preferably, the bump includes a tilting portion located on the upper portion. The tilting portion includes engaging the upper surface of the bump along the first wedge portion. Preferably, the bump comprises two... a tapered pepper-shaped portion of the side of the lead-angled convex portion and disposed thereon, the inclined wedge-shaped portion including the upper surface of the convex portion along the second slanting wedge-shaped portion; preferably, parallel to the The surface of the semiconductor device of the two contacts has an arcuate cross-sectional shape. The wire bonding method of the present invention has the following steps between the contact and the second contact, and is characterized by the following steps: Bumps: and the second and second series bend the leads at the second joint, and the first contact » _ into the bump containing the lead f fold convex; the lead wire from the first skill to the fine 1% The m shape advances so that the inner corner of the capillary is convex only: the upper part is wide, and the front end of the capillary is flat. The part tightens the lead == to bond the lead' and presses the lead to the core by the inner corner to form a lead crushing port having a sectional area smaller than the lead sectional area and the current line cutting step lead cutting. In the method of pulling up the lead wire and making the bobbin in the lead crushing portion, it is preferable that the bump is formed: the step of forming the part is formed, and the lead is bent at the second contact; the front end The flat portion presses the lead to form the inclined wedge shape, and the raw layer/step system binds the lead to the inclined wedge portion to be joined; the lead wire is in the shape of an arcuate cross section. The wire bonding method of the present invention is to connect the semiconductor device by wire bonding. Between the first contact point and the second contact point of the 200836277, the method has the following steps: a bump forming step of bending a lead on the second contact and forming a reverse layer on the opposite side of the second contact. a bump having a bent portion of the lead; a bonding step of advancing the lead from the first contact toward the bump, and pressing the lead on the flat portion of the front end of the capillary to bond the lead; the lead crushing portion The forming step is to take the capillary from the bump After the height of the front end is lower than the height of the upper end of the bent portion of the lead, the capillary is moved from the second contact point toward the bent portion of the lead, and a part of the lead is cut by the corner of the capillary, and by capillary The inner corner portion presses the lead wire against the lead bent convex portion to form a lead crushing portion having a sectional area smaller than the lead cross section; and the lead cutting step pulls up the lead wire and cuts the lead wire at the lead crushing portion. The wire bonding method of the invention is characterized in that the lead wire is connected between the first contact and the second contact of the semiconductor device, and the step of forming the bump is formed by bending the lead on the second contact. On the opposite side of the ... contact, the lead is bent and convex, and the lead is pressed by the flat portion of the front end of the capillary to form an inclined wedge on the first contact side, and the capillary is raised from the upper surface of the inclined wedge to After the height of the front end is lower than the height of the upper end of the bent portion of the lead, the capillary is moved from the inclined wedge portion toward the bent portion of the lead, and a part of the lead is cut by the corner of the capillary, and the hair is cut by the hair. The inner corner portion of the tube is pressed against the lead wire f to be bent, and the lead crushing portion m having a sectional area smaller than the lead sectional area is drawn and cut at the lead crushing lead; the bonding step is to take the lead from the first The contact is curved toward the bump. The lead is pressed against the inclined wedge by the flat portion of the front end of the capillary to engage the lead. The lead crushing step is formed by lifting the capillary from the top of the 12200836277 inclined wedge to the front end. After the height is lower than the height of the upper end of the bent portion of the lead, the capillary is moved from the inclined wedge portion toward the bent portion of the lead, and a part of the lead is cut by the corner portion of the capillary, and the inner corner portion of the capillary is used. The lead wire is pressed against the lead bent convex portion to form a lead crushing portion having a sectional area smaller than the lead sectional area; and the lead cutting step is to pull up the lead wire and cut the lead wire at the lead crushing portion. Further, in the wire bonding method of the present invention, it is preferable that the cut surface is substantially parallel to the surface of the semiconductor device including the second contact; and the lead crushing portion has an arcuate cross-sectional shape. According to the present invention, it is possible to improve the bonding property between the lead and the bump and to improve the cutting property of the lead wire, thereby achieving an effect of improving the bonding quality. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. (First Embodiment) As shown in Fig. 1, a semiconductor device 14 according to an embodiment of the present invention includes a lead frame 15 provided with a lead wire 4, a semiconductor wafer 2 mounted thereon by a wafer bonding method, and a semiconductor wafer 2 formed thereon. A convex & 2 b formed on the upper jaw 3 and a lead 12 for connecting the wire 4 and the bump 21. The material 12 is joined from the crimping ball 6 (which is formed by bonding on the wire 4) toward the bump 21 in an arc shape. The lead wire 12 is a gold wire, and the flange portion 3 and the wire 4 are made of a material such as copper which is chemically plated with gold and has poor adhesion to gold. As shown in Fig. 2, a bump formed on the pad portion 3. The lead 13 200836277 12 is folded into a layer to form a 'from the surface of the pad portion 3, and is sequentially provided with: a segment of the bump 21a, which is a crimped ball 6 and a bump lead that is pressed against it. ^ The first lead and the folded portion 25 are formed in the opposite direction of the wire 4; the second segment 21b is formed by pressing the lead 12 on the first segment of the bump; the second lead bend The folded convex portion 27 is formed on the side of the wire 4; the tilting "open" on the bump and the lead profile 29 are formed by bending the lead to form the bump 21 for cutting the lead 12 The lead wire 12 is engaged on the wire 4 where the working contact is located for i times to form the crimping ball 6, and then advances toward the bump 21 to be joined to the second contact, that is, formed on the pad portion 3. The inclined wedge portion 22 on the upper surface of the bump 21 is formed on the side of the ith lead bent convex portion 25 in the opposite direction of the wire 4 in the bump 21, and has a lead profile 19; the upper surface of the bump 21 is recessed at the center The first and second lead bending convex portions 25 and 27 have an upward convex shape on both sides of the connecting direction of the lead wires 12. The inclined plane formed by the inclined 4 hexagonal portions 22 The second lead bending convex portion 27 is inclined from the central recess toward the side of the wire 4 where the working contact is located. As described above, the inclination of the inclined wedge portion 22 is higher at the side of the wire 4 where the second contact point is located. The direction from the first contact along the side of the pad portion 3 of the second contact is gradually lowered. The lead 12 is joined along the surface of the inclined wedge portion 22. The upper surface of the bump 2 is provided with a slave The central concave portion is inclined toward the first lead bending convex portion 25 (which is located on the opposite side of the wire 4 where the first contact is located), and has a convex portion along the first lead bending convex portion 25 The lead profile 29 of the time, and the lead profile 19 when the wire is wound. 200836277 Figure 3 is a top view of the lead 12 joined to the protrusion, the second of the bump 2i. As shown in Fig. 3, the wire 4 extends in the opposite direction! The portion 25' is oriented in the direction of the wire 4 where the first contact is located: 2 leads, and the "pinch portion 27" is out of the first contact. It can be understood from Fig. 1 and Fig. 2 that the first lead bending convex portion 25' is shaped like a scorpion; the second semi-circular scorpion is removed from the upper semi-circular spheroidal current/line, and the bowing convex portion is 27 On the side of the wire 4 on which the first contact is located, the portion of the ball is convex toward the upper surface of the bump 2 μ, ^ 〆 1 , and the opposite side is the inclined surface of the inclined mold portion 22 . The lead profile 29 of the lead profile 1 9 , 2 Q2 π / a » can be placed in the lead 12 when the bump is formed, and the lead profile 19 of the lead wire 12 and the first lead % fold convex portion 25 μ μ. _ ^ Between the lead profile 19 and the second bump 21b, the lower side of the lead profile 19 may be located between the lead profile 19 and the second bump 21b. Before the formation operation of the bump 21, the structure f of the capillary μ will be described. The capillary tube 16 has an inner lead angle, a face portion 33, a face portion 33, an outer cymbal cymbal, an outer cymbal 35, and a straight hole 37, and is made of a stone material such as ceramic. The 33-series is disposed on the front end surface of the capillary 16, and is a plane that maintains a slight angle with respect to the pad portion 3. With this plane, the sphere 5 formed at the front end of the lead 12 can be folded or folded. The wire 12 is connected to the pad portion 3 of the semiconductor wafer 2. The straight hole 37 is inserted with the lead η, and the inner grip is slightly larger than the through hole of the outer diameter of the force line 12 provided at the center of the capillary 16. The inner corner portion 31 is provided The tapered face between the straight hole 37 and the flat portion % is gradually widened toward the flat portion 33. When the inner guide corner portion is tightly engaged with the ball 5 toward the crotch portion 3 during the engagement, the spherical body can be squashed toward the diameter. The splicing ball 6 is formed. The 'inner corner portion 31 has a corner portion 32 between the plane portion 33. Since the flat portion 15 200836277 v the face portion 33 has a slight angle with respect to the pad portion 3, the plane of the capillary μ is 邠When the lead wire 2 is pressed, the corner portion 32 between the inner corner portion 31 and the flat portion 33 penetrates into the lead 12. Referring to Fig. 4, the semiconductor wafer 2 of the semiconductor device 14 of the present embodiment will be described. The pad portion 3 is formed by the step of forming the bump 21. The bump n is formed by a wire splicing device (not shown), and the bonding tool (i.e., the capillary tube 16) through which the lead wire 12 is inserted is formed by moving up, down, left, and right. ), after the capillary 16 presses the ball formed at the front end of the lead 12 toward the crotch portion 3 to form the crimping ball 6, The rising edge moves in the right direction in the figure, that is, in the opposite direction of the wire 4 where the first contact is located. After the capillary 16 is moved laterally, the lead wire 12 is joined to the pad portion 3 by the crimping ball 6, thereby making the capillary 16 The inner corner portion 31 abuts against the outer surface of the lead wire 12, and the lead wire 12 is bent and deformed in the lateral movement direction of the capillary tube 16. Further, the capillary tube 16 is laterally moved to the flat portion 33 on the side of the wire 4 to reach the crimping ball 6. The center position is such that the lead wire 12 enters between the flat portion 33 and the crimping ball 6. "", as shown in Fig. 4 (b), the capillary 16 moves downward, and the flat portion 33 on the side of the wire 4 is placed. The bow 1 line U between the flat portion 33 on the side of the wire 4 and the crimping ball 6 is pressed against the face of the crotch portion 3. The lead 12 is pressed by the crimping ball (10) to form a bump lead 21a which is a flat shape. The i-th bump is formed by crimping the ball 6 and the bump lead 21a' formed into a flat shape. Moreover, the lead 12 of the plug-in/hair, field & 16 and the second-stage bump 2丨a are continuous on the opposite side of the wire 4 of the bump 21, and the continuous portion of the lead 12 is inside the capillary η The lead portion is pressed toward the lower side, thereby causing the lead. Formed along the tapered shape of the inner corner η 16 200836277. Thereby, the shape of the lead wire 12 is such that the clearance between the straight hole 37 of the capillary μ and the lead wire 12 is inclined upward on the reverse side of the wire 4 and guided by the straight hole 37. As shown in Fig. 4(C), the capillary 16 rises after the formation of the first-stage bump 21a, and moves toward the side of the wire 4 which is opposite to the previous lateral movement. By the lateral movement of the capillary 16, the inner corner portion 31 of the capillary 16 is brought into contact with the outer surface of the lead 12. Since the lead 12 is inclined toward the opposite side of the wire 4 in the state in which the i-th bump 2i & is formed, it is located at the plane portion and 帛! The lead 12 between the segment bumps 2U is bent from the opposite side of the wire 4 toward the side of the wire 4 due to the lateral movement of the capillary μ, and the first lead-folded portion 25 is formed. Then, the capillary 16 is laterally moved toward the side of the wire 4 until the flat portion 33 on the opposite side of the wire 4 reaches the substantially central position of the i-th segment bump 2 & As shown in Fig. 4(d), after the lateral movement of the capillary 16, the capillary 16 moves downward, and by the flat portion 33 of the opposite side of the wire 4, it will be located at plane #33 and the first segment of the bump 2ia. The lead 12 between them is pressed toward the pad portion 3. The lead, the milk 12 and the second step bump 2丨a are pressed to have a flat shape, and are crimped to the first bump 2a to form the second step bump 21b. Since the first-stage lead-bow convex portion 25 is deviated from the flat portion 33 of the capillary 16, it is not pushed in the direction of the pad portion 3 due to the downward movement of the capillary tube 16, but is in the second-stage bump 2 as compared with the V-line. The opposite side of 4 forms a substantially semispherical shape that is convex upward. Further, the first lead bending convex portion 25 is bent by about 180 degrees due to the downward movement of the capillary tube 6 to form the second-stage convex ghost 21 b. Therefore, the first lead bent tenon 25 is work hardened by bending, and thus the hardness is higher than the other portions. Further, 17 200836277 is inserted into the lead wire 12 of the capillary tube 16 and the second stage bump 21b, and is continuous on the side of the wire 4 of the bump 2, and the continuous portion of the lead 12 is guided by the inner corner of the capillary 16 3" The wire 12 is pressed so as to form the lead 12 along the tapered surface shape of the inner corner portion 31. Thereby, the shape of the lead wire 12 is such that the gap between the straight hole 37 of the capillary tube 16 and the lead wire 12 is inclined upward on the side of the wire 4 and guided by the straight hole 37.

如圖4(e)所示，在形成第2段凸塊21b與第i引線彎 折凸部25後’毛細管上升，朝著與之前橫向移動成反方 向、即導線4之反向側而移動。藉由毛細管16的橫向移 動，使毛細管16之内導角部31抵接於引線12的外面。 由於在形成有帛2段凸塊21b之狀態下，引線12係朝導 線4之側傾斜，因此，位在平面部33與第2段凸塊2比 間的引線12’會因為毛細管16的橫向移動，從導線4侧 朝導線4的反向側被彎#，形成第2弓丨線彎折凸部27。繼 而’毛細管移動至直孔37之中心位置大致位在第i引 線彎折凸部25的中心位置。毛細管16之中心移動至直孔 37的中心位置後，第2引線彎折凸部27從毛細管16之平 面部33脫離，其卜部分較外徑部35更偏於導線4之侧。 如圖4(f)所示，在毛細管16之橫向移動後，毛細管16 下移^使大致半圓球狀之第i引線彎折凸部乃進入直孔η :’藉由導線4側之平面部33，將位於平面部33與第2 塊21b之間的引線12朝墊部3緊壓。引線12被緊壓 於弟2段凸塊21b而形成扁平形狀，且被麼接於第2段凸 塊2^形成第3段凸塊21ce插通於毛細管16之引線η 200836277 與第3段凸塊21c，在凸塊21之導線4的反向側連續，該 引線12之連續部分，藉由毛細管16之内導角部31而被 朝墊部3侧之第1引線彎折凸部25下壓。第丨引線彎折 凸部25,由於在先前步驟藉彎曲加工之加工硬化而較其他 部分為硬，因此，可造成被挾於其與毛細管16之内導角 部31(此部分係由硬質材料所構成）間之引線12壓縮變形。 因此，藉由毛細管16之下移，内導角部31壓縮被挾於其 與第1引線彎折凸部25之間之引線12，使内導角部3丨之 ( 角部32能深入引線12，形成具有弓形剖面之引線壓潰部 3〇，其在引線12之接合部分之剖面積小於引線12的剖面 積。 如圖5(c)所示，引線12被挾於圓形錐面形狀之内導角 : 部31與大致呈半圓球狀之第1引線彎折凸部25間，而受 • 到壓縮成形，沿著第1引線彎折凸部25之外面形成弓形 之引線壓潰部30。引線壓潰部3〇位在第丨引線彎折凸部 I 25之導線4側。又，如圖5(a)所示，成形後的引線12之 形狀成為，以毛細管16之直孔37與引線12間之餘隙循 導線4之反向側傾斜、且受直孔37導引而朝上方延伸。 由於之前毛細管16的移動，第2引線彎折凸部27從 毛細管16之平面部33脫離，因而，不會因毛細管16的 下移而被壓向第2段凸塊21b的方向，而是在第3段凸塊 21c之導線4側且高於被平面部33緊壓之部分之部分圓球 狀的凸形。又，由於第2引線彎折凸部27，受毛細管下移 而形成第3段凸塊21c所影響，而有大致18〇度的彎折， 19 200836277 因此，第2引線彎折凸部27因為彎曲之加工硬化而較其 他部分為硬。在向上凸形狀之第2引線彎折凸部27與内 導角部31之角部32被壓向引線之部分之間，形成有傾斜 楔形部22，其傾斜面係從導線4侧朝導線4之反向侧而漸 低。傾斜楔形部22之面形狀，係大致沿著平面部33與外 徑部35的形狀。 *如圖4(g)所示，在結束第3段凸塊21c的形成後，毛 :官16 i升。此時’由於未圖示之夾持構件係呈開放狀 態’故會因毛細管16之上升而使引線尾段18在毛細管Μ 之下延伸。 m 戶厅 的 P A w、工汴匕便51線尾段1 8 ::足以形成下—球體後，關閉未圖示之夾持構件並夾As shown in FIG. 4(e), after the second-stage bump 21b and the i-th lead bent convex portion 25 are formed, the capillary rises and moves in the opposite direction to the front direction, that is, on the opposite side of the wire 4. . The inner corner portion 31 of the capillary 16 abuts against the outer surface of the lead 12 by the lateral movement of the capillary 16. Since the lead 12 is inclined toward the side of the wire 4 in a state in which the two-stage bump 21b is formed, the lead 12' located between the flat portion 33 and the second-stage bump 2 may be lateral due to the capillary 16. The movement is bent from the side of the wire 4 toward the opposite side of the wire 4 to form the second bow line bending convex portion 27. Then, the center position of the capillary moving to the straight hole 37 is substantially at the center of the i-th guide bending convex portion 25. When the center of the capillary 16 is moved to the center position of the straight hole 37, the second lead bent convex portion 27 is detached from the flat surface portion 33 of the capillary 16, and the portion of the capillary portion 27 is more biased to the side of the lead wire 4 than the outer diameter portion 35. As shown in Fig. 4(f), after the lateral movement of the capillary 16, the capillary 16 is moved downward so that the substantially semi-spherical ith lead bent convex portion enters the straight hole η: 'by the plane portion on the side of the wire 4 33, the lead 12 located between the flat portion 33 and the second block 21b is pressed toward the pad portion 3. The lead wire 12 is pressed against the second-stage bump 21b to form a flat shape, and is connected to the second-stage bump 2 to form a lead η of the third-stage bump 21ce inserted through the capillary 16 and the third-stage convex The block 21c is continuous on the opposite side of the wire 4 of the bump 21, and the continuous portion of the lead 12 is bent under the convex portion 25 toward the first lead on the side of the pad portion 3 by the inner corner portion 31 of the capillary tube 16. Pressure. The second lead bending convex portion 25 is harder than the other portions due to the work hardening by the bending process in the previous step, and thus can be caused to be guided by the inner corner portion 31 of the capillary tube 16 (this portion is made of a hard material) The lead 12 between the constituents is compression-deformed. Therefore, by the downward movement of the capillary 16, the inner corner portion 31 compresses the lead 12 which is twisted between the first lead bent portion 25 and the inner lead portion 3 (the corner portion 32 can penetrate the lead) 12. Forming a lead crushing portion 3 having an arcuate cross section, the cross-sectional area of the joint portion of the lead 12 being smaller than the sectional area of the lead 12. As shown in Fig. 5(c), the lead 12 is folded in a circular tapered shape. The inner lead angle is formed between the portion 31 and the first lead bent convex portion 25 which is substantially semi-spherical, and is subjected to compression molding to form an arcuate lead crushing portion along the outer surface of the first lead bent convex portion 25. 30. The lead crushing portion 3 is clamped on the side of the lead 4 of the second lead bent convex portion I 25. Further, as shown in Fig. 5(a), the shape of the formed lead 12 becomes a straight hole of the capillary tube 16. The gap between the 37 and the lead 12 is inclined toward the opposite side of the wire 4 and is guided upward by the straight hole 37. Due to the movement of the capillary 16 before, the second lead bent convex portion 27 is from the flat portion of the capillary 16. 33 is detached, and therefore, it is not pressed in the direction of the second-stage bump 21b by the downward movement of the capillary 16, but on the side of the wire 4 of the third-stage bump 21c. A portion of the spherical convex shape that is higher than the portion pressed by the flat portion 33. Further, since the second lead bent convex portion 27 is affected by the downward movement of the capillary to form the third-stage convex portion 21c, there is approximately 18 The bending of the twist, 19 200836277 Therefore, the second lead bending convex portion 27 is harder than the other portions due to the work hardening of the bending. The second lead bending convex portion 27 and the inner guiding corner portion 31 in the upward convex shape are The corner portion 32 is pressed between the portions of the lead, and is formed with an inclined wedge portion 22 whose inclined surface is gradually lowered from the side of the wire 4 toward the opposite side of the wire 4. The shape of the inclined wedge portion 22 is substantially along The shape of the flat portion 33 and the outer diameter portion 35. * As shown in Fig. 4(g), after the formation of the third-stage bump 21c is completed, the hair is 16 liters. At this time, the grip is not shown. The component is in an open state, so the lead tail section 18 extends under the capillary 因 due to the rise of the capillary 16. The PA w of the m-house, the 51-tail section of the work chamber 18 8 :: sufficient to form the lower-sphere After that, the clamping member (not shown) is closed and clamped

持引線12而與毛細管μ —同卜斗^ L ^ , 门上升。如此，引線12會因 =ΤΛ ，而對引線12施加張力。由於在 塊的形成中’有形成剖面積小於引線u ==引線壓潰部30,因此，會因施加於引線12之 張力’而在引線壓潰邱 由該拉伸應力，在二1:生大的拉伸應力。繼而，藉 成引線剖* 29。由=…。之處將引…斷而形 成，因此，在切斷潰部30係、以小面積之方式形 不致過大，亦可減緩線12全一^ 第1引二^Ur情形。在切斷引線12後，具備 凸塊21，其形成步驟乃告：楔形部22之多段㈣積層之 20 200836277 以下參照圖6說明在形成於本實施形態之半導體裝置 14之半導體晶片2的墊部3之凸塊21上接合引線12之步 驟0 如圖6(a)所示，在第丨接點所在之導線4進行第丨次 接合後，移動毛細管1 6而使引線弧形前進，並使插通有 引線12之毛細管16之直孔37之中心移至形成於導線* 之反向側之第1引線彎折凸部25的大致中心處。又，待Holding the lead 12 and the capillary μ, the door rises. Thus, the lead 12 will apply tension to the lead 12 due to =ΤΛ. Since the formed sectional area is smaller than the lead u == lead crushing portion 30 in the formation of the block, the tensile stress is applied to the lead 12 due to the tension applied to the lead 12, and the tensile stress is caused by the tensile stress. Large tensile stress. Then, the lead is cut into sections. By =... The place will be broken and formed. Therefore, in the case of cutting the broken portion 30, the shape is not too large in a small area, and the line 12 can be alleviated. After the lead 12 is cut, the bump 21 is provided, and the forming step is as follows: a plurality of (four) laminated layers of the wedge portion 22 200836277 The pad portion of the semiconductor wafer 2 formed in the semiconductor device 14 of the present embodiment will be described below with reference to FIG. Step 0 of bonding the lead 12 on the bump 21 of FIG. 3, as shown in FIG. 6(a), after the second bonding of the wire 4 where the second contact is located, the capillary 16 is moved to advance the lead and make the lead curved. The center of the straight hole 37 through which the capillary 16 having the lead 12 is inserted is moved to the approximate center of the first lead bending convex portion 25 formed on the opposite side of the wire *. Again, wait

毛細管之中心位置到達第！引線彎折凸部乃的大致中心 處後，便將毛細管1 6下移。 如圖6⑻所示，毛細f 16下移使大致半圓球狀之第丄 引線彎折凸部25進入直孔37内，藉由導線4側之平面部 33，將位於平面部33與傾斜楔形部22帛之引線u朝傾 斜楔形部22緊壓。由於在有引後彳 、 田於隹有引線12运來（以弧形前進之方 式送來)之凸塊21之導線4冑，已硬化之第2引線彎折凸 部”係朝上凸出，因此，被毛細管16之平面部33下壓 :二線12’在導線4側乃是受到第2引線弯折凸部27的 t樓。繼而，當毛細管16進-步下移，會使位於平面部33 與傾斜楔形部22間之引線12變 之形狀。又，當毛細管16進一 +下銘者傾斜換形部22 ®— V下移，會使引線12的上 成為沁者毛細管16之平面部33與 , 引線12的下面，受傾斜楔 之形狀’ 、、儿基减“的面所擠壓而變形成為 者傾斜楔形部22之面的形狀 ^成為 凸塊21。由於傾斜楔形部22的面與弓丨線12具=接合： 面積’因此’引線12與凸塊21的接合性可提升。的接- 21 200836277 由於向導線4之側延伸之引線12，係受到已硬化之第 2引線彎折凸_27戶斤支撐’因此，就算毛細” 6之平面 部33與外徑部35將引線12下壓，亦不會朝墊部3之面 而往下侧變形，因而可防止引線12肖導線4或半導體晶 片2接觸。 插通於毛細管16之引線丨2與傾斜楔形部22的上面， 在凸塊21之導線4之反向側連續，該引線12之連續部分，The center position of the capillary reaches the first! After the lead bends the convex portion substantially at the center, the capillary 16 is moved downward. As shown in Fig. 6 (8), the capillary f 16 is moved downward so that the substantially semicircular spherical second lead bent convex portion 25 enters the straight hole 37, and the flat portion 33 on the side of the wire 4 will be located at the flat portion 33 and the inclined wedge portion. The lead u of 22 turns toward the inclined wedge portion 22. Since the lead wire 4 of the bump 21 which is transported by the lead wire 12 (sent in an arc shape) is led, the hardened second lead bent convex portion is protruded upward. Therefore, it is pressed down by the flat portion 33 of the capillary tube 16: the second line 12' is on the side of the wire 4 by the t-throw of the second lead bent convex portion 27. Then, when the capillary tube 16 is moved down, it will be located. The shape of the lead 12 between the flat portion 33 and the inclined wedge portion 22 is changed. Further, when the capillary tube 16 is moved down, the tilting portion 22 ® - V is moved downward, so that the upper surface of the lead 12 becomes the plane of the capillary tube 16 The portion 33 and the lower surface of the lead wire 12 are deformed by the shape of the inclined wedge and the surface of the tapered base portion to be deformed so as to become the surface of the wedge portion 22. Since the face of the inclined wedge portion 22 is engaged with the bow line 12: the area 'therefore the 'adhesiveness of the lead 12 and the bump 21 can be improved. Connected - 21 200836277 The lead 12 extending from the side of the guide wire 4 is supported by the hardened second lead bending convex _27 jin. Therefore, even the flat portion 33 and the outer diameter portion 35 of the capillary "6" lead 12 is pressed down, and it is not deformed toward the lower side of the pad portion 3, so that the lead wire 4 or the semiconductor wafer 2 of the lead 12 can be prevented from coming into contact. The lead wire 2 of the capillary tube 16 and the upper surface of the inclined wedge portion 22 are inserted. Continuing on the opposite side of the wire 4 of the bump 21, the continuous portion of the lead 12,

藉由毛細管16之内導角部31，被壓向硬化之第i、引線彎 ，凸部25而壓縮形成引線壓潰部2〇,其在引線12之接合 部分的剖面積較引、線12的剖面積為小。如目5⑻、⑷所 引線壓/貝咅p 20的形狀、剖面，與先前參照圖5⑷、⑻ :斤况明之引線壓潰冑3〇相同地，乃是沿第工引線彎折凸 邛25之外面的弓形形狀，位在第1引線彎折凸部25之導 線4側。 當引線12對凸塊21之接合結束後，如圖6(c)所示， 2、、、田g 1 6上升。此時，由於未圖示之夾持構件呈開放狀 恶，因此，藉由毛細管16之上升而在毛細管16之下延伸 出引線尾段18。 如圖6(d)所不，當毛細管16之上升已使引線尾段u 之長度足以形成下一球體，便關閉未圖示之夾持構件，並 夾持引線12而與毛細管16 一同上升。如此，引線乃 藉由夾持構件而被拉伸向上，對引線12施加張力，而在 d面積小於引線12所具剖面積之引線壓潰部2〇之處，將 弓丨線12予以切斷。由於引線壓潰部2〇係以小面積的方式 22 200836277 形成’因此，在切斷引線12之際，可減緩受該張力反彈 而在引線12發生彎折的情形。在切斷引線12後，形成沿 著笫1引線幫折凸部25之導線4側的側面、且呈弓形形 狀之引線剖面1 9。在切斷引線12後，結束接合步驟。 在上述之本貫施形恶的半導體裝置14中，由於係將引 線12接合至具有大接合面積之傾斜楔形部22之面，因此， 具有提升引線12與凸塊21之接合性的效果。又，在形成 fThe inner lead portion 31 of the capillary tube 16 is pressed against the hardened i-th, lead-bend, and convex portion 25 to be compressed to form a lead crushing portion 2, and the cross-sectional area of the joint portion of the lead 12 is smaller than that of the lead wire 12 The sectional area is small. The shape and cross section of the lead pressure/Beiyu p 20 according to items 5 (8) and (4) are the same as those of the lead crushing 胄 3 先前 of the above-mentioned FIG. 5 (4), (8): The outer arcuate shape is located on the side of the wire 4 of the first lead bent convex portion 25. When the bonding of the lead 12 to the bump 21 is completed, as shown in Fig. 6(c), 2, and the field g 1 6 rises. At this time, since the grip member (not shown) is open, the lead tail portion 18 is extended below the capillary tube 16 by the rise of the capillary tube 16. As shown in Fig. 6(d), when the rise of the capillary 16 has made the length of the lead tail segment u sufficient to form the next sphere, the clamping member (not shown) is closed, and the lead 12 is held to rise together with the capillary 16. Thus, the lead wire is stretched upward by the holding member, tension is applied to the lead wire 12, and the bow line 12 is cut off where the d area is smaller than the lead crushing portion 2 of the sectional area of the lead wire 12. . Since the lead crushing portion 2 is formed in a small area 22 200836277, the cutting of the lead 12 can be slowed down by the tension and the lead 12 can be bent. After the lead 12 is cut, a lead profile 19 having an arcuate shape along the side of the lead 4 on the side of the lead 4 of the ridge 1 is formed. After the lead 12 is cut, the bonding step is ended. In the above-described singular semiconductor device 14, since the lead wire 12 is bonded to the surface of the inclined wedge portion 22 having a large joint area, there is an effect of improving the bondability between the lead 12 and the bump 21. Also, in the formation of f

凸塊21之際、以及將引線12朝凸塊21接合之際，係藉 由硬化之第1引線彎折凸部25與内導角部31夾持引線12， 藉以形成其剖面積較引線12之剖面積為小的引線壓潰部 2〇、30,並於引線壓潰部20、3〇切斷引線12，因此，引 線12的切斷力不致過大，可發揮減緩因為反彈而在引線12 發生彎曲的效果。再者，由於在將引線i 2接合至凸塊2工 之際，引線12係受到已硬化之第2引線彎折凸部27所支 撐，因此，不會因接合緣故朝墊部3面之側而往下變形， 可發揮防止引線12與導線4或半導體晶片2接觸的效果。 如上述，本實施形態之效果在於，可提升引線12與凸塊21 之間的接合性、可提升引線12白"刀斷性、以謀求提升接 合品質。 在上述實施形態之說明例中，雖已說明在第2接點（位 置較第1接點之導線架丨5的導線4為高）之半導體晶片2 的墊部3形成凸塊2卜然而，凸塊21可形成於較第'接 點為高的位置’亦可形成於較其為低的位置，1，並不限 於形成於墊部3之上，亦可形成於導線架15之導線4之 23 200836277 (實施例2) 以下參照圖面說明本發明之其他實施形態。對於與先 前所述之貫施形態相同的部分，係賦與相同符號並省略其 說明。 如圖7所不，形成於導線4之上的凸塊2丨，係彎折引 線12而成積層構成，由導線4之面起，依序具備有：第i 段凸塊21 a，係由壓接球6與被緊壓於其上之凸塊引線2 j a， 所構成；第1引線彎折凸部25，係形成於墊部3之反方向； 第2段凸塊2 1 b，係從第1段凸塊之上方緊壓引線丨2而形 成；凸塊上面之傾斜楔形部22 ;以及引線剖面28，係在 彎折引線12以形成凸塊21時切斷引線12的剖面。引線12 在對第1接點所在之墊部3之上進行丨次接合以形成壓接 球6後，朝凸塊21弧形前進，而接合於第2接點所在、 即形成於導線4之凸塊21之上面的傾斜楔形部22 ;在第 1引線彎折凸部25 (其係形成於凸塊2丨之墊部3的反方向） 之側，具備有引線剖面19。 以下參照圖8說明在本實施形態之半導體裝置1 *之導 線架15的導線4形成凸塊21之步驟。從圖8(a)至（d)為止 之凸塊21的形成步驟，與先前實施形態所述之圖4(a)至（d) 之凸塊21的形成步驟，乃是相同的步驟，將圖4(約至（d) =步驟中的墊部3置換成導線4，將導線4置換成墊部3, 乐1接點為半導體晶片2之墊部3，第2接點為導線架15 之導線4。藉由圖8(勾至圖8(d)的步驟，可形成第1段凸 24 200836277 塊2U、帛2段凸塊21b、及第1引線彎折凸部25。/ , 成弟2段凸塊2lb時，藉由緊壓毛細管μ之平面邛33形 形成具有傾斜面之傾斜楔形冑22。傾斜楔形部/所n =斜面’係從第1接點（即塾部3)之反向側的第i ^線 ，鳥折凸部25朝墊部3側漸 ^ …第2段一，在凸：：之，^ 該引線12的㈣部分^ 3側連續’在When the bumps 21 are joined and the leads 12 are joined to the bumps 21, the leads 12 are held by the hardened first lead bent convex portions 25 and the inner lead corner portions 31, whereby the cross-sectional area is smaller than the leads 12 The cross-sectional area is a small lead crushing portion 2A, 30, and the lead wire 12 is cut at the lead crushing portions 20, 3, so that the cutting force of the lead wire 12 is not excessively large, and the wire 12 can be slowed down due to the rebound. The effect of bending occurs. Further, since the lead wire 12 is supported by the hardened second lead bending convex portion 27 when the lead wire i 2 is joined to the bump 2, the side of the pad portion 3 is not caused by the bonding edge. Further, the effect of preventing the lead 12 from coming into contact with the lead 4 or the semiconductor wafer 2 can be exhibited. As described above, the effect of the present embodiment is that the bonding between the lead 12 and the bump 21 can be improved, and the whiteness of the lead 12 can be improved to improve the bonding quality. In the above-described example of the embodiment, it has been described that the bump 2 is formed in the pad portion 3 of the semiconductor wafer 2 at the second contact (the wire 4 of the lead frame 5 of the first contact is higher). The bump 21 may be formed at a position higher than the first 'contact point' or may be formed at a position lower than the first portion, and is not limited to being formed on the pad portion 3, and may be formed on the wire 4 of the lead frame 15. 23 200836277 (Embodiment 2) Hereinafter, another embodiment of the present invention will be described with reference to the drawings. The same portions as those of the above-described embodiments are denoted by the same reference numerals and the description thereof will be omitted. As shown in FIG. 7, the bumps 2丨 formed on the wires 4 are formed by laminating the leads 12, and the bumps 21a of the i-th segment are sequentially provided from the surface of the wires 4. The crimping ball 6 is formed by the bump lead 2 ja which is pressed against it; the first lead bent convex portion 25 is formed in the opposite direction of the pad portion 3; the second segment bump 2 1 b is The lead 丨 2 is formed by pressing the lead 丨 2 from above the first bump; the inclined wedge portion 22 on the bump; and the lead cross section 28 cut the cross section of the lead 12 when the lead 12 is bent to form the bump 21. After the lead wire 12 is joined to the pad portion 3 where the first contact is located to form the crimping ball 6, the lead wire 12 is curved toward the bump 21, and is joined to the second contact point, that is, formed on the wire 4. The inclined wedge portion 22 on the upper surface of the bump 21 is provided with a lead cross section 19 on the side of the first lead bent convex portion 25 (which is formed in the opposite direction of the pad portion 3 of the bump 2). Next, a step of forming the bumps 21 on the wires 4 of the lead frame 15 of the semiconductor device 1* of the present embodiment will be described with reference to FIG. The steps of forming the bumps 21 from Figs. 8(a) to (d) are the same steps as the steps of forming the bumps 21 of Figs. 4(a) to (d) described in the previous embodiment. 4 (about to (d) = the pad portion 3 in the step is replaced with the wire 4, the wire 4 is replaced with the pad portion 3, the contact of the music 1 is the pad portion 3 of the semiconductor wafer 2, and the second contact is the lead frame 15 The wire 4. By the step of Fig. 8 (hook to Fig. 8(d), the first segment convex 24 200836277 block 2U, the 帛 2 segment bump 21b, and the first lead bent convex portion 25 can be formed. When the two-stage bump 2 lb is formed, the inclined wedge-shaped ridge 22 having an inclined surface is formed by pressing the plane 邛 33 of the capillary μ. The inclined wedge-shaped portion/n=the slope--from the first joint (ie, the dam portion 3) On the ith line of the opposite side, the bird-folded convex portion 25 is gradually toward the side of the pad portion 3, the second segment is one, and the convex portion is on the side of the (four) portion of the lead 12

二圖在：Γ示，在結束第2段凸塊2lb"形成後，毛 '、…6在未圖示之夾持構件開啟之狀態下上升。毛細”6 上升後，弓丨線尾段18便會往毛細管16的下側延伸。S 如圖8⑴所示，當毛細管16上升至引線尾“的長 又已達既定長度後，關閉夾持構件並爽持引線Η而盥毛 :管16 一起上升。如此’在形成第2段凸塊21時因：細 官Μ的前端而形成之引線壓潰部34(其剖面積較引線η 之剖面積為小），被賦與大的應力，而切斷引線Η。引線Η 被切斷後’形成引線剖φ 28。該引線剖面28，係由傾斜 楔形部22的上面略微朝上側凸出。 卜 以下參照圖9說明本實施形態中引線12朝凸塊η的 接合。與先前所述之圖2相同的部分，係賦與相同符號並 省略說明。本實施形態之凸塊21，在有引線12送來（以弧 形前進之方式送來）之塾部3側，形成有引線剖面Μ。由 於引線别面28並非以f折引線12之方式而成形，因而並 未硬化1此’支撐引、線12之力量較之前的實施形態要 25 200836277In the second diagram, after the formation of the second segment bump 2lb", the hairs ', ... 6 are raised in a state in which the holding member (not shown) is opened. After the capillary "6" rises, the tail portion 18 of the bow line extends toward the lower side of the capillary 16. As shown in Fig. 8(1), when the capillary 16 rises to the length of the lead tail and has reached a predetermined length, the clamping member is closed. And hold the lead and lick the hair: the tube 16 rises together. When the second-stage bump 21 is formed, the lead crushing portion 34 formed by the tip end of the fine mandrel (the cross-sectional area of the lead η is smaller than the lead η) is large stress, and is cut off. Lead wire. After the lead Η is cut, the lead Φ 28 is formed. The lead profile 28 is slightly convex upward from the upper surface of the inclined wedge portion 22. Next, the joining of the lead wires 12 to the bumps η in the present embodiment will be described with reference to Fig. 9 . The same portions as those of Fig. 2 described above are denoted by the same reference numerals and the description will be omitted. In the bump 21 of the present embodiment, a lead profile 形成 is formed on the side of the crotch portion 3 where the lead wire 12 is fed (sent in an arc shape). Since the lead face 28 is not formed by f-folding the lead 12, it is not hardened. The force of the support guide and the wire 12 is greater than that of the previous embodiment.

低。然而，在圖7之本實施形態中，由於凸塊21係形成 於位置較半導體晶片2之整部3為低之導線4之上，因此， 如圖9所示，在以弧形方式送來的引線12之第1接點之 側、即墊部3之側，受到朝上方之拉引。因此，即使是未 經硬化之引線剖面28亦能支撐引線12，引線12不會朝下 側變形而接觸於導線4。以下事項則與之前所述實施形態 相同：用以接合引線12之傾斜楔形部22與引線12有大 的接觸面積；將毛細管1 6之直孔3 7的中心位置對準已硬 化之第1引線彎折凸部25的中心位置以接合；形成剖面 積較引線12之剖面積為小的引線壓潰部2〇，並於該引線 壓潰部20切斷引線12。 以上所述之本實施形態之半導體裝置14的效果在於， 與先前的實施形態相同地，可發揮提升引線i 2與凸塊2 i 間之接合性，提升引線12的切斷性，以及謀求提升接合 品質。再者，在本實施形態中’由於凸塊21之積層次數 只須有第！段 '第2段共2層’因而能在短時間形成凸塊， 具有可縮短接合時間的效果。 在上述實施形態的說明中，凸塊21係形成於位置較第 1接點為低之帛2接點所在的導線4之上，然而，只要將 凸塊21形成於較第〗接赴氣^ 、 弟1接點為低之位置的第2接點，則並 不侷限形成於導線4之卜，t n/ 部3之上。良4之上，亦可形成於半導體晶片2之塾 (實施例3) 一實施形態。對於與先 以下參照圖面說明本發明之又 26 200836277 前參照圖2至圖6所沭眚始你能m , 冰 厅江貫施形態相同的部分，係賦與同樣 付號並省略說明。太眘絲^. 本貝施形匕、，係關於前端較之前的實施 形態為細之毛細管16料行之打線方法，以及藉由該方 法而製得之半導體裝置。為了要對應於近年來半導體裝置 之微間距化’漸有使用前端較細之毛細管16，然而，毛細 管16的前端越細，在參照圖2至圖6所說明之實施形態 中’會發生第2引線彎折凸部27成為獨立半球狀而不能low. However, in the embodiment of FIG. 7, since the bump 21 is formed on the wire 4 which is lower than the entire portion 3 of the semiconductor wafer 2, it is sent in an arc shape as shown in FIG. The side of the first contact of the lead 12, that is, the side of the pad portion 3, is pulled upward. Therefore, even the unhardened lead profile 28 can support the lead 12, and the lead 12 does not deform toward the lower side to contact the wire 4. The following matters are the same as in the previous embodiment: the inclined wedge portion 22 for bonding the lead 12 has a large contact area with the lead 12; the center position of the straight hole 37 of the capillary 16 is aligned with the hardened first lead The center of the bent convex portion 25 is joined to each other; a lead crushing portion 2A having a smaller sectional area than the lead wire 12 is formed, and the lead 12 is cut at the lead crushing portion 20. The semiconductor device 14 of the present embodiment described above has the effect of improving the bonding property between the lead wire i 2 and the bump 2 i, improving the cutting property of the lead wire 12, and improving the same as in the previous embodiment. Bonding quality. Furthermore, in the present embodiment, the number of layers of the bumps 21 is only required to be the first! The segment 'the second segment has two layers' and thus can form bumps in a short time, and has an effect of shortening the bonding time. In the above description of the embodiment, the bump 21 is formed on the wire 4 where the 帛2 contact is lower than the first contact. However, as long as the bump 21 is formed in the second position, The second contact of the lower position of the younger one is not limited to the wire 4, tn/3. Alternatively, it may be formed on the semiconductor wafer 2 (Example 3). In the following, the following description will be made with reference to the drawings. In the following, reference is made to Figs. 2 to 6 before the reference to Fig. 2 to Fig. 6 is the same as that of the glazed river, and the same reference numerals are given and the description is omitted. Taishen wire ^. Benbes shape, is a wire bonding method in which the front end is thinner than the previous embodiment, and the semiconductor device produced by the method. In order to cope with the fine pitch of the semiconductor device in recent years, the capillary 16 having a narrow tip is gradually used. However, the finer the tip end of the capillary 16 is, the second embodiment will appear in the embodiment described with reference to FIGS. 2 to 6 The lead bending convex portion 27 becomes an independent hemisphere and cannot

支撐弧形線的情形。在本實施形態中，就算使用前端較細 之毛細管16打線，亦能有效的支撐弧形引線而提升引線12 與凸塊2 1間之接合性。 如圖10所示，形成於墊部3之上之凸塊21，係將引 線12彎折積層構成，由墊部3之面起，依序具備有：第】 段凸塊21a，係由壓接球6與被緊壓於其上之凸塊引線21& 所構成；第1引線彎折凸部25，係形成於導線4的反方向； 弟2 4又凸塊2 1 b ’係由第1段凸塊之上緊壓引線！ 2而形成； 第2引線彎折凸部27，係形成於導線4之側；凸塊上面之 傾斜楔形部22 ;以及引線剖面29，係在將引線12彎折以 形成凸塊21時將引線12朝長邊方向拉伸切斷之拉伸剖 面。引線12係在對於第1接點所在之導線4之上進行i 次接合以形成壓接球6後，朝凸塊21弧形前進，接合於 第2接點所在、即形成於墊部3之凸塊21的上面之傾斜 楔形部22。在第1引線彎折凸部25(其被形成於凸塊21中 之導線4的反方向）之側，具備··引線剪斷剖面43，係將 引線12之一部分藉徑向之剪力而予切斷之剪斷剖面；以 27 200836277 及引線剖® 19，係將引、線12朝長邊方向拉伸切斷之拉伸 剖面。引線剪斷剖面43，與包含半導體裝置14之墊部3 之面大致平行。 凸塊21的上面在中央呈現凹部，沿著引線12之連接 方向於兩側有第1、第2引線彎折凸部25、27呈上凸形 狀。傾斜楔形# 22，係從中央凹部朝第i接點所在之導線 4側的第2引線彎折凸部27形成的傾斜面。如上述，傾斜The case of supporting a curved line. In the present embodiment, even if the capillary 16 having a thin tip is used, the arc lead can be effectively supported to improve the bondability between the lead 12 and the bump 21. As shown in FIG. 10, the bumps 21 formed on the pad portion 3 are formed by bending and laminating the lead wires 12. From the surface of the pad portion 3, the first segment bumps 21a are sequentially provided. The ball 6 is formed by the bump lead 21& which is pressed against it; the first lead bent convex portion 25 is formed in the opposite direction of the wire 4; the younger 2 4 and the bump 2 1 b ' are Press the lead on the 1 segment of the bump! Formed by 2; the second lead bent convex portion 27 is formed on the side of the wire 4; the inclined wedge portion 22 on the upper surface of the bump; and the lead profile 29, which is formed when the lead 12 is bent to form the bump 21 12 Stretch the cut tensile section in the longitudinal direction. The lead wire 12 is formed in the arc of the bump 21 after being joined for one time on the wire 4 on which the first contact is placed to form the crimping ball 6, and is joined to the second contact, that is, formed in the pad portion 3. The inclined wedge portion 22 of the upper surface of the bump 21. On the side of the first lead bending convex portion 25 (which is formed in the opposite direction of the lead wire 4 in the bump 21), a lead shearing cross section 43 is provided, and a part of the lead wire 12 is subjected to a radial shear force. The cut profile of the cut is made; with 27 200836277 and lead section® 19, the tensile profile of the lead and the line 12 is stretched in the longitudinal direction. The lead shear profile 43 is substantially parallel to the face of the pad portion 3 including the semiconductor device 14. The upper surface of the bump 21 has a concave portion at the center, and the first and second lead bent convex portions 25, 27 are convexly formed on both sides along the connecting direction of the lead wires 12. The inclined wedge shape #22 is an inclined surface formed by the second lead bending convex portion 27 on the side of the wire 4 on which the i-th contact is located from the central recess. As mentioned above, tilt

2部22之傾斜’係在第1接點所在之導線4之側較高， 攸第1接點沿g 2接點之墊部3側之方向，則高度漸低。 引線1 2係沿著該傾斜楔形部22之面接合。 /口著第1引線彎折凸部25，具有形成凸塊時之引線剖 面29,以及打線時之引線剖㊆19。又，具有鄰接於引線 剖面19之引線剪斷剖面43。 女圖11所不，凸塊21之第1引線彎折凸部25，係伸 出於第1接點所在之導線4的反方向，第2引線彎折凸部 27，係伸出於第1接點所在之導線4的方向。帛i引線彎 斤凸邛25，係朝凸塊2丨之上面之大致半圓球形的突起： 第2引線彎折凸部27，位在第1接點所在之導線4側、且 為朝凸塊21《上面的部分圓球狀突起，其反向侧係傾斜 換形部22的傾斜面。 。引線剖面19、29係弓形形狀之剖面。形成凸塊時之 1線12的引線剖面29 ’可位在打線時之引線12的引線剖 面19與第1引線彎折凸部25之間；亦可位於引線剖面19 之下側、且位在引線剖面19與第2凸塊2讣t間。又， 28 200836277 由於引線剪斷剖面43，乃是將引線12之一部分從導線4 之側朝墊部3循徑向予以剪斷之面，故成為朝導線4側彎 曲之月牙型形狀並鄰接於引線剖面19。 以下參照圖12說明在本實施形態之半導體裝置14之 墊部3形成凸塊21的步驟。以前述實施形態中圖4(約至（b) 所不凸塊21的形成步驟之相同步驟，形成壓接球6、以及 被壓接球6擠壓而成扁平形狀之凸塊引線21a，。由壓接球 ρ 6與凸塊引線21a，形成第i段凸塊21a，藉由與圖4(c)、（d) 相同的步驟，形成第！引線彎折凸部25、以及壓接至第1 段凸塊21a之第2段凸塊21b。 如圖12(a)所示，在形成第2段凸塊21b與第1引線彎 折凸部25後，毛細管16上升，朝導線4之反向側移動。 ； 藉由毛細管I6之橫向移動，引線12從導線4側朝導線4 ， 之反向側被彎折，形成第2引線彎折凸部27。又，毛細管 16在$線4側之外徑部3 5的端面，移動至第2引線彎折 凸部27的大致中心位置。在該位置，毛細管16之直孔37 的中心位置，較第1引線彎折凸部25的中心位置位在更 偏於導線4之側。 如圖12(b)所示，在毛細管16之橫向移動後，毛細管 16藉由導線4側之外徑部35與接續於此之平面部33，將 位於平面部33與第2段凸塊21b之間之引線12朝墊部3 緊壓。引線12被壓向第2段凸塊2ib而形成扁平形狀， 且被壓接於第2段凸塊21b而形成第3段凸塊21c。由於 毛細管16之導線4側之外徑部35的端面，係在第2引線 29 200836277 彎才斤凸音P 9 7 ° 的大約中心位置處下移，因此，外徑部3 5的 端面與接嬙# & > τ 、於此之平面部33 ’會將第2引線彎折凸部27 之中“起之半邊凸部（係指位在導線4之反向側之半邊凸部） 朝墊。Ρ 3緊壓。藉此’第2引線彎折凸部27巾，導線4 的反向側A，係沿著外徑告Ρ 3 5之#面及接續於此之平 面°卩33而成形，形成有從第2引線彎折凸部27的大約中 “立置起朝導、線4之反向侧彎曲之曲面，以及接續在該曲 朝‘線4之反向側而尚度漸低地傾斜的平面。該 曲：與平面構成傾斜楔形部22。又，由於從第2引線彎： 凸部27之中心起導線4侧的半邊，並未被外徑部Μ盘平 面部33朝墊告"緊壓’故會形成部分圓球狀。由於第2 引線弓折凸部27因毛細管16下移而形成第3段凸塊… 之影響而有大肖刚度的彎折，因此，第2引線彎折凸部C 27,因彎曲之加工硬化所致而較其他部分有更高硬度。如 上述，由於毛細管16之外徑部35之端面與接續^ 面部33將第2引線f折凸部27之中心起之半邊凸 匕 位在導線4之反向側之半邊凸部）朝墊部3下壓，因此广曰 算是在毛細管16前端較細之情形，第2引線彎’: 亦不會成為獨立之半球型凸部，而會形成導線4側之° 圓球形狀、及接續於此之傾斜楔形部22。 刀 如圖12⑷所示，藉毛細管16的下移而形成第 塊21c、第2引線.彎折凸部27、及傾斜楔形部 ，又 管16從傾斜楔形部22之上面上升，至复乂 ，毛細 1引線彎折凸部25之上端高度為止。 ㈤度低於第 200836277 如圖12(d)所示，毛細管16上升後，朝導 側以大致平行於墊部3之方式而橫向移動。插通於毛細管 Μ之引線12與第3段凸塊21c之連續部分，藉由毛細管16 之直孔37與内導角部31而被壓向第】引線彎折凸部乃 之導線4側之面。第1引線彎折凸部25,由於在先前步驟 之彎折加工之加工硬化所致而較其他部分為硬，因此，能 使被夾持於其與由硬質材料所構成之毛細管16之直孔37 及内導角部31間之引線12變形…進一步使毛細管16 朝導線4之反向側橫向移動後，毛細管16之内導角部 的角部32會深入引線12，開始由角部32的邊緣將引線12 於徑向予以剪斷，藉著剪斷而形成上面呈大致水平台地狀 之引線剪斷剖Φ 41。且在此同時’内導角部3ι對被夾持 在其與第1引線彎折凸部25間之引線12壓縮，形成具有 弓形剖面且在引線12之連續部分的剖面積較引線12所具 剖面積為小的引線壓潰部3 〇。 如圖13⑷所示，引線12受到圓形錐面形狀之内導角 部31與大致半圓球狀之第1引線彎折凸部25挾於直中， 而被壓縮成形’沿第"丨線彎折凸部2…卜面形成弓形 形狀的引線壓潰部30。_潰部3〇位在第"丨線彎折 凸：25之導線4側。又，在弓丨線壓潰部30之導線4側具 有與斷剖面4 1，JL >(李蔣弓丨始， 八係將引線12 <-部分朝徑向予以剪斷 而形成。引線f斷剖面41，乃是朝導線4之侧凸出之月牙 型的平面形狀，其上面與墊•"大致平行，乃是從傾斜楔 形部22高起之台地形肤。7 ， 也办狀又，如圖13(a)所示，成形後之 31 200836277 引線12的形狀成為，以毛細管j6 餘蹿循逡始j 置孔3 7與引線12之 餘隱、循導線4之反向側傾斜、且受 伸。 又直孔37導引而朝上延 如圖12(e)所示，引線12中一部八^ 部30之形# # 土 P刀之到斷與引線壓潰 ho之开/成結束後’毛細管16上 之4拣播旌# 口 此巧*，由於未圖示 又持構件係壬開放狀態，因此，藉由毛細管 而在毛細管16之下延伸出引線尾段18。 卢^圖12(f)所示，待毛細管16上升μ線尾段18之長 一球體後’便關閉未圖示之夾持構件並夾 持引線12與毛細管16 一起上升。如 Μ Μ Α ^ ^ i W綠12糟由夹 面上藉拉，而對引、線12施加張力。由於引線麼 ^ 3〇之』面積小於引線12之剖面積，^ 1 施加之張力會在引線厂堅潰部3〇產生大的拉伸應力。又， 由於該拉伸應力所致，引後 引線12在引線壓潰部30被拉斷， 而形成引線剖Φ 29。由於引線壓潰部3〇係以小面 式形成，在拉斷引線12時對引線12全體施加的" 必太大’在拉斷引、線12之際，可減緩因為該拉伸力反彈 而在引線12發生_折的情形。引線12被拉斷後， !引線彎折凸冑25與傾斜楔形部22之多段彎折積層的凸 塊2 1，其形成步驟遂告結束。 以下參照圖14說明在本實施形態之半導體裝置， 在半導體晶片2的塾部3 μ於：fl/士、十几说Λ 3上所形成之凸塊21上接合引線η <步驟。 如圖14⑷所不，在對第1接點所在之導線4進行第i 32 200836277 次接合後，使引線弧形前進，將毛細管16橫向移動而使 插通有引線12之毛細管16中位於導線4側的外徑部35 之立而面’移動至形成於凸塊21上面之傾斜楔形部22在導 線4側之端部位置，然後開始接合步驟。又，當毛細管16 中位於導線4側之外徑部35之端面到達形成於凸塊上面 之傾斜楔形部22在導線侧之端部位置時，將毛細管16下 移。 如圖14(b)所示，毛細管下移，而使導線4側之外徑部 35端部與接續於此之平面部33沿傾斜楔形部22之面，藉 由導線4側之平面部33，將位於平面部33與傾斜楔形部 22間之引線12緊壓於傾斜楔形部22。由於第2引線彎折 凸部27係在導線4側（即，有引線12被以弧形方式送來之 凸塊21之導線4側）形成為部分圓球形狀，有因彎曲加工 而硬化，故被毛細管16之平面部33下壓之引線12導線4 之側，能藉由第2引線彎折凸部27支撐。繼而，毛細管16 =步下移，位於平面部33與傾斜楔形部22間之引線12 =形為沿著傾斜楔形部22的形狀。又，當毛細管Μ進一 ' 引線1 2的上面形狀成為沿著毛細管1 6之平面部 =只外徑部35之形狀，引線12的下面被壓向傾斜楔形部 之面，變形為沿著傾斜楔形部22之面的形狀，使引線 的下面接合於凸塊21。此時，亦有引線12被壓至在形 贫鬼21日守而產生之台地形狀之引線剪斷剖面41上，使 ，】面41被壓、/貝而與引線12接合。由於傾斜楔形部22 之面、引線剪斷剖面41、與引線12具有大的接合面積， 33 200836277 而能提升引線12與凸塊21之接合性。 由於延伸至導線4之侧之引線12，受到已硬化之第2 引線彎折凸部27所支擇，因此，就算毛細管16之平面部 33與外徑部35下壓引線12’亦不會朝墊部3面向下變形， 因此’可防止引線12與導線4或半導體晶片 如圖14(c)所示，藉毛細管16之下移引線以接合至凸 塊21之作業結束後，乃結束接合步驟，巾開始引線壓潰 部之形成步驟。毛細管16上升，由傾斜楔形部22之上面 上升至其前端高度低於第1引線彎折凸部2…端高度 為止。 如圖所示’毛細管16上升後，朝導線4之反向 側以大致平行於塾部3之方式橫向移動。與先前參照圖12 所說明之凸塊21之形成時相同地，使毛細管16朝導線4 之反向側橫向移動後’毛細管16之内導角部Η之角部Μ 會殊入引、線，藉由角部32之邊緣而將引線u 以剪斷，藉剪斷而 成上面呈大致水平台地狀之引線剪斷 吾面43。且在此同時，内導角部31董十被 引線彎折凸部25間之始μ「 之引線12壓縮，形成具有弓形剖面、 且在引線1 2之連續《ώβ八 、、、邛刀之剖面積較引線12所具剖面積為 ^ ^ ^ ^ ^ ^ ^ 在形成引線壓潰部20後，便結束引 線>c，貝部之形成步驟。 圖 14(b) 、 （C)戶- )斤不之引線壓潰部20的形狀、剖面，盥 先前參照圖13(a)、/、 (c)所說明之引線壓潰部30相同，乃是 沿著第1引線彎折v 2 5之外面的弓形形狀，且位在第1 34 200836277 引線彎折凸部25之導線4側。又，引線剪斷剖面Μ亦與 先前說明之引線剪斷剖面41相同，係位在引線壓潰部2〇 之導線4側，乃是朝導線4之侧凸出之月牙形的平面形狀， 其上面大致平行於墊部3，且么從傾斜楔形部22高起之台地 形狀。 ^ 如圖14(e)所示，在結束引線12之一部分的剪斷與引 線壓潰部20的形成後’使毛細f 16上升並開始引線切斷 ^步驟。此時’由於未圖示之失持構件呈開放狀態，因此， ‘係藉毛細管16之上升而在毛細管16之下延伸出引線尾段 18 ° 如圖14(f)所示，毛細管16上升至引線尾段18之長度 足以形成次一球體後，關閉未圖示之爽持構件並夾持著引The inclination of the two portions 22 is higher on the side of the wire 4 where the first contact is located, and the height of the first contact is on the side of the pad portion 3 of the g 2 contact. The leads 12 are joined along the face of the inclined wedges 22. / The first lead bent convex portion 25 is attached, and has a lead cross-section 29 when a bump is formed, and a lead cross-section 19 19 when the wire is bent. Further, it has a lead shearing profile 43 adjacent to the lead profile 19. In the case of FIG. 11, the first lead bending convex portion 25 of the bump 21 is extended in the opposite direction of the wire 4 where the first contact is located, and the second lead bending convex portion 27 is extended to the first one. The direction of the wire 4 where the contact is located. The 引线i lead bends the knob 25 and is a substantially semi-spherical protrusion on the upper side of the bump 2丨: the second lead bent convex portion 27 is located on the side of the wire 4 where the first contact is located, and is a convex bump 21 "The upper partial spherical projection, the reverse side of which is the inclined surface of the inclined changing portion 22. . The lead profiles 19, 29 are sections of an arcuate shape. The lead profile 29' of the 1 line 12 when the bump is formed may be located between the lead profile 19 of the lead 12 and the first lead bent protrusion 25 at the time of wire bonding; or may be located below the lead profile 19 and at The lead profile 19 is between the second bump 2讣t. Further, 28 200836277, because the lead-cut section 43 is a surface in which one of the leads 12 is cut radially from the side of the wire 4 toward the pad portion 3, it is a crescent-shaped shape curved toward the wire 4 side and adjacent to Lead profile 19. Next, a step of forming the bumps 21 in the pad portion 3 of the semiconductor device 14 of the present embodiment will be described with reference to FIG. In the same manner as in the step of forming the non-bumps 21 of Fig. 4 (about to (b) in the above embodiment, the crimping balls 6 and the bump lead wires 21a which are pressed by the crimping balls 6 into a flat shape are formed. The i-th bump 21a is formed by the crimp ball ρ 6 and the bump lead 21a, and the first lead bent convex portion 25 is formed by the same steps as those of FIGS. 4(c) and (d), and is crimped to The second segment bump 21b of the first segment bump 21a. As shown in Fig. 12(a), after the second segment bump 21b and the first lead bent convex portion 25 are formed, the capillary 16 rises toward the wire 4 The reverse side moves. By the lateral movement of the capillary I6, the lead 12 is bent from the side of the wire 4 toward the opposite side of the wire 4, and the second lead bending convex portion 27 is formed. Further, the capillary 16 is at the line 4 The end surface of the side outer diameter portion 35 moves to a substantially central position of the second lead bending convex portion 27. At this position, the center position of the straight hole 37 of the capillary 16 is smaller than the center of the first lead bending convex portion 25. The position is located on the side of the wire 4. As shown in Fig. 12(b), after the lateral movement of the capillary 16, the capillary 16 is separated from the plane by the outer diameter portion 35 of the wire 4 side. The portion 33 presses the lead wire 12 between the flat portion 33 and the second-stage bump 21b toward the pad portion 3. The lead wire 12 is pressed against the second-stage bump 2ib to form a flat shape, and is crimped to the second portion. The third bump 21c is formed by the segment bump 21b. The end surface of the outer diameter portion 35 on the side of the wire 4 of the capillary 16 is at the approximate center position of the second lead 29 200836277. Therefore, the end face of the outer diameter portion 35 and the contact # &> τ , and the flat portion 33 ′ here will bend the second lead into the convex portion 27 (the half of the convex portion) The half-side convex portion on the opposite side of the wire 4 is pressed toward the pad. Ρ 3 is pressed. By this, the second lead bends the convex portion 27, and the opposite side A of the wire 4 is warned along the outer diameter. And the surface of the second lead bending convex portion 27 is formed to have a curved surface which is curved from the opposite side of the second lead bending convex portion 27 toward the opposite side of the guide line 4, and is connected thereto. A curved plane that is inclined toward the opposite side of the line 4 and which is gradually lowered. This curved line forms an inclined wedge portion 22 with the plane. Further, since the second lead bend: the half of the side of the wire 4 from the center of the convex portion 27 It is not formed by the outer diameter portion of the disk flat portion 33 toward the pad, so that a partial spherical shape is formed. Since the second lead bowing convex portion 27 is moved downward by the capillary tube 16 to form a third segment of the bump... The second lead bending convex portion C 27 has a higher hardness than the other portions due to the work hardening of the bending. As described above, the outer diameter portion 35 of the capillary tube 16 is obtained. The end face and the connecting surface 33 of the second lead f are formed by the half-side convex portion of the second side of the lead wire 4 on the opposite side of the lead wire 4, and are pressed toward the pad portion 3, so that the width is calculated in the capillary tube 16 In the case where the front end is thin, the second lead bend ': does not become an independent hemispherical convex portion, but forms a spherical shape on the side of the wire 4 and the inclined wedge portion 22 connected thereto. As shown in Fig. 12 (4), the blade is formed by the downward movement of the capillary tube 16 to form the first block 21c, the second lead, the bent convex portion 27, and the inclined wedge portion, and the tube 16 is raised from the upper surface of the inclined wedge portion 22 to the retanning. The capillary 1 lead bends the upper end of the convex portion 25 to the height. (5) Degree is lower than 200836277 As shown in Fig. 12(d), after the capillary 16 rises, it is laterally moved toward the guide side so as to be substantially parallel to the pad portion 3. The continuous portion of the lead wire 12 and the third segment bump 21c inserted into the capillary tube is pressed by the straight hole 37 of the capillary tube 16 and the inner corner portion 31 toward the side of the wire 4 of the first lead bent convex portion. surface. The first lead bent convex portion 25 is harder than the other portions due to work hardening of the bending process in the previous step, and therefore can be held in a straight hole with the capillary 16 formed of a hard material. The lead 12 between the 37 and the inner corner 31 is deformed... further, after the capillary 16 is moved laterally toward the opposite side of the wire 4, the corner 32 of the inner corner of the capillary 16 will penetrate the lead 12 and start from the corner 32. The edge cuts the lead 12 in the radial direction, and by means of shearing, a lead shearing profile Φ 41 having a substantially water platform shape is formed. At the same time, the inner corner portion 3i compresses the lead 12 sandwiched between the first lead bent portion 25 and the lead 12 having an arcuate cross section and the cross-sectional area of the continuous portion of the lead 12 is smaller than that of the lead 12 The cross-sectional area is a small lead crushing portion 3 〇. As shown in Fig. 13 (4), the lead wire 12 is subjected to a circular tapered surface inner corner portion 31 and a substantially semicircular spherical first lead bent convex portion 25 in a straight line, and is compression-formed 'along' line. The bent convex portion 2 is formed into a bow-shaped lead crushing portion 30. _ The smashing part 3 is in the section of the "丨 line bend convex: 25 of the wire 4 side. Further, on the side of the wire 4 of the bow line crushing portion 30, it is formed by cutting the cross section 41, JL > (Li Jiang Gong, the octagonal portion of the lead wire 12 < - portion is cut in the radial direction. The f-cut profile 41 is a crescent-shaped planar shape that protrudes toward the side of the wire 4, and the upper surface thereof is substantially parallel to the pad•", which is a table top surface raised from the inclined wedge portion 22. 7 Further, as shown in Fig. 13 (a), the shape of the lead 12 after forming 31 200836277 becomes, and the remaining side of the lead wire 7 is inclined by the capillary j6. And the straight hole 37 is guided and extended upward as shown in Fig. 12(e), and the shape of a part of the wire 12 in the lead 12 is broken. After the end of the process, the 4 sputum 旌 口 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管 毛细管As shown in Fig. 12(f), after the capillary 16 is raised by the length of the μ-tail section 18, the clamping member (not shown) is closed and the holding lead 12 is raised together with the capillary 16. Μ Μ Α ^ ^ i W green 12 is pulled by the clamping surface, and the tension is applied to the lead and the wire 12. Since the area of the lead wire is smaller than the sectional area of the lead 12, the tension applied by the ^ 1 will be in the lead A large tensile stress is generated in the crushing portion of the factory. Further, due to the tensile stress, the lead wire 12 is pulled off at the lead crushing portion 30 to form a lead cross-section Φ 29. Since the lead crushing portion 3 The tantalum system is formed in a small face type, and the "quote applied to the entire lead 12 when the lead 12 is pulled off" is too large. When the lead is pulled and the line 12 is pulled, the spring force can be slowed down due to the rebound of the tensile force. In the case of the folding, after the lead wire 12 is pulled off, the lead bending flange 25 and the plurality of bent bumps 2 of the inclined wedge portion 22 are finished, and the forming step ends. Next, the present embodiment will be described with reference to FIG. In the semiconductor device, the lead η < step is formed on the bump 21 formed on the crotch portion 3 of the semiconductor wafer 2 at: fl/shi, tens of statements 3. As shown in Fig. 14 (4), the first contact is After the wire 4 is placed for the i-32 200836277 joint, the lead is curved and the capillary 16 is moved laterally. The standing portion of the outer diameter portion 35 of the capillary tube 16 having the lead wire 12 on the side of the wire 4 is moved to the end portion of the inclined wedge portion 22 formed on the side of the projection 21 on the side of the wire 4, and then the joining step is started. Further, when the end face of the outer diameter portion 35 of the capillary 16 on the side of the wire 4 reaches the end portion of the inclined wedge portion 22 formed on the upper side of the projection on the wire side, the capillary 16 is moved downward as shown in Fig. 14(b). It is shown that the capillary is moved downward, so that the end portion of the outer diameter portion 35 on the side of the wire 4 and the plane portion 33 connected thereto along the inclined wedge portion 22, by the flat portion 33 on the side of the wire 4, will be located at the flat portion 33 and The lead 12 between the inclined wedge portions 22 is pressed against the inclined wedge portion 22. Since the second lead bending convex portion 27 is formed in a partial spherical shape on the side of the wire 4 (that is, the side of the wire 4 on which the lead wire 12 is fed in an arc shape), it is hardened by bending processing. Therefore, the side of the lead wire 4 of the lead 12 which is pressed by the flat portion 33 of the capillary 16 can be supported by the second lead bent convex portion 27. Then, the capillary 16 = step down, the lead 12 located between the flat portion 33 and the inclined wedge portion 22 is shaped along the shape of the inclined wedge portion 22. Further, when the capillary is twisted into the shape of the upper surface of the lead wire 1 2 so as to be along the plane portion of the capillary tube 16 = the outer diameter portion 35 only, the lower surface of the lead wire 12 is pressed against the surface of the inclined wedge portion, and is deformed to be along the inclined wedge shape. The shape of the face of the portion 22 is such that the lower surface of the lead is joined to the bump 21. At this time, the lead 12 is also pressed to the lead-cut section 41 of the shape of the table which is formed on the 21st day of the formation of the devil, so that the surface 41 is pressed and bonded to the lead 12. Due to the surface of the inclined wedge portion 22, the lead shearing profile 41, and the large bonding area with the lead 12, 33 200836277, the bondability between the lead 12 and the bump 21 can be improved. Since the lead 12 extending to the side of the wire 4 is selected by the hardened second lead bent convex portion 27, even if the flat portion 33 of the capillary 16 and the outer diameter portion 35 are pressed down the lead 12', The pad portion 3 is deformed downward, so that the lead wire 12 and the wire 4 or the semiconductor wafer can be prevented from ending as shown in FIG. 14(c), after the operation of transferring the wire under the capillary 16 to the bump 21 is completed, the bonding step is terminated. The towel starts the step of forming the lead crushing portion. The capillary 16 rises and rises from the upper surface of the inclined wedge portion 22 until the height of the front end thereof is lower than the height of the end of the first lead bending convex portion 2. As shown in the figure, after the capillary 16 is raised, it is laterally moved toward the opposite side of the wire 4 so as to be substantially parallel to the crotch portion 3. Similarly to the formation of the bump 21 previously described with reference to Fig. 12, the capillary 16 is moved laterally toward the opposite side of the wire 4, and the corner portion of the inner corner of the capillary 16 is different from the lead and the wire. The lead u is cut by the edge of the corner portion 32, and the lead 43 is cut by the lead which is cut into a substantially water platform. At the same time, the inner lead angle portion 31 is compressed by the lead 12 between the lead bending portions 25 to form a continuous cross section of the lead 12 and the knives. The cross-sectional area of the lead wire 12 is ^ ^ ^ ^ ^ ^ ^ After the formation of the lead crushing portion 20, the lead wire > c, the formation step of the shell portion is completed. Fig. 14 (b), (C) household - The shape and cross section of the lead crushing portion 20 are the same as those of the lead crushing portion 30 described with reference to Figs. 13(a) and/or (c), but are bent along the first lead v 2 5 The outer arcuate shape is located on the side of the wire 4 of the lead bending convex portion 25 of the 1 34 200836277. Further, the lead shearing profile Μ is also the same as the previously described lead shearing profile 41, and is located at the lead crushing portion. The side of the wire 4 of 2 turns is a crescent-shaped planar shape which protrudes toward the side of the wire 4, the upper surface of which is substantially parallel to the pad portion 3, and the shape of the table which rises from the inclined wedge portion 22. ^ Fig. 14 e), after the end of the cutting of one portion of the lead 12 and the formation of the lead crushing portion 20, the step of raising the capillary f 16 and starting the lead cutting step is performed. 'Because the unlooked member is in an open state, 'the extension of the capillary 16 causes the lead tail section to extend under the capillary 16 18 ° as shown in Fig. 14 (f), the capillary 16 rises to the lead tail After the length of the segment 18 is sufficient to form the second sphere, the unillustrated holding member is closed and the guide is held

* 線1 2而與毛細管1 6 > —走已卜斗。iL e 10起上升。如此，乃藉由夾持構件而 使引線12被拉向上’對引線12施加張力。由於引線壓潰 部20之剖面積小於引、線12之剖面積，因此，遂藉由施加 在引線12之張力，而在引線壓潰部2〇產生大的拉伸應力。 又’藉由該拉伸應力’在引線壓潰部2〇之處將引線以拉 斷，形成引線剖面19。由於引線壓潰部2〇係以小面積之 方式形成’在將引線12拉斷時施加在引線12全體之拉伸 力不致過大’且在將引線12拉伸切斷時，可減緩因為該 拉伸力反彈而在引線12發生.彎曲的情形。引線12被拉斷 後’沿著第i引線彎折凸部25之導線4側的側面形成弓 形的引線剖面19。當引線12被切斷後便結束引線切斷步 驟，結束打線作業。 35 200836277 上述本實施形態之半導體裝置14,與之前的實施形態 相同’能發揮提升引線12與凸塊21間之接合性，提升引 線12之切斷性，以謀求提升接合品質的效果。再者，在 本實施形態中，就算是藉由前端較細之毛細管16進行凸 塊形成或打線作業，亦能有效的支撐弧形引線，發揮提升 引線12與凸塊2 1間之接合性的效果。 在上述實施形態的說明例中，凸塊21係形成於位置較 第1接點之導線架15之導線4為高之第2接點之半導體 晶片2之墊部3，然而，凸塊21可形成於較第i接點為高 之位置’較其為低之位置亦可，又，並不限於形成於墊部 3之上，亦可形成於導線架15之導線4之上。 【圖式簡單說明】 圖1為顯示本發明之實施形態之半導體裝置的俯視 圖。 圖2為顯示在本發明之實施形態之半導體裝置中，連 接於導線架與半導體晶片間之引線與凸塊之侧視圖。 圖3為顯示在本發明之實施形態之半導體裝置中，於 半導體晶片之上形成之凸塊的俯視圖。 圖4(a)〜(h)為顯示在本發明之實施形態之半導體裝置 中，在半導體晶片之上形成凸塊之步驟的說明圖。 圖5(a) (c)為顯示在本發明之實施形態之半#體裝置 中’位於凸塊上面之引線切斷部的剖面圖。 圖6⑷⑷為顯示在本發明之實施形態之半導體裝置 36 200836277 中’將引線接合至半導體晶片上之凸塊時之步驟的說明 圖。 圖7為顯示在本發明之其他實施形態之半導體裝置 中’連接導線架與半導體晶片間之引線與凸塊之側視圖。 圖8(a)〜（f)為顯示在本發明之其他實施形態之半導體 I置中’在半導體晶片之上形成凸塊之步驟的說明圖。 圖9(a)〜(d)為顯示在本發明其他實施形態之半導體裝 ^ 置中’將引線接合至半導體晶片上之凸塊時之步驟的說明 圖。 圖1 〇為顯不在本發明之其他實施形態之半導體裝置 中’連接導線架與半導體晶片間之引線與凸塊之側視圖。 圖11為顯示在本發明之其他實施形態之半導體裝置 ;中’於半導體晶片之上形成之凸塊與引線之俯視圖。 : 圖i2(a) (f)為顯示在本發明之其他實施形態之半導體 衣置中纟體晶片之上形成凸塊之步驟的說明圖。 」 圖為顯示在本發明之其他實施形態之半導體 i置中，位於凸塊上面之引線之切斷部的剖面圖。 圖14(a)〜（f)為顯示在本發明之其他實施形態之半導體 裝置中’將引線接合至凸塊時之步驟的說明圖。 圖15⑷〜⑷為顯示習知技術中半導體裝置之引線之連 接步驟的說明圖。 圖16為顯示f知技術中半導體裝置之引線之連接步驟 的說明圖。 圖17為顯示習知技術中半導體裝置之引線切斷的說明 37 200836277 圖。 圖1 8為顯示習知技術中半導體裝置之引線之彎曲變形 的說明圖。 【主要元件符號說明】 2 半導體晶片 3 墊部 4 導線 5 球體 6 壓接球 12 引線 14 半導體裝置 15 導線架 16 毛細管 17 夾持構件 18 引線尾段 19 引線剖面 20 引線壓潰部 21 凸塊 21a1 凸塊引線 21a 第1段凸塊 21b 第2段凸塊 21c 第3段凸塊 22 傾斜楔形部 38 200836277 25 第1引線彎折凸部 27 第2引線彎折凸部 28 引線剖面 29 引線剖面 30,34引線壓潰部 31 内導角部 32 角部 33 平面部 35 外徑部 37 直孔 41,43引線剪斷剖面 39* Line 1 2 and capillary 1 6 > iL e 10 has risen. Thus, the lead 12 is pulled upward by the clamping member to apply tension to the lead 12. Since the cross-sectional area of the lead crushing portion 20 is smaller than the sectional area of the lead wire 12, a large tensile stress is generated in the lead crushing portion 2 by the tension applied to the lead wire 12. Further, the lead is pulled at a position where the lead crushing portion 2 is bent by the tensile stress, thereby forming a lead cross section 19. Since the lead crushing portion 2 is formed in a small area so that the tensile force applied to the entire lead 12 is not excessive when the lead 12 is pulled off, and the lead 12 is stretched and cut, the pull can be slowed down. The stretch force rebounds and occurs when the lead 12 is bent. After the lead 12 is pulled off, an arcuate lead profile 19 is formed along the side of the lead 4 on the side of the lead 4 of the i-th lead bent convex portion 25. When the lead 12 is cut, the lead cutting step is ended, and the wire bonding operation is ended. 35 200836277 The semiconductor device 14 of the above-described embodiment is the same as the previous embodiment. The bonding between the lead 12 and the bump 21 can be improved, and the cutting property of the lead wire 12 can be improved to improve the bonding quality. Further, in the present embodiment, even if the bump 16 is formed by the capillary 16 having a thin tip, the arc lead can be effectively supported, and the bonding between the lead 12 and the bump 2 can be improved. effect. In the illustrative example of the above embodiment, the bump 21 is formed on the pad portion 3 of the semiconductor wafer 2 at a second contact point where the lead wire 4 of the lead frame 15 of the first contact is higher. However, the bump 21 can be formed. The position formed at a position higher than the ith contact is lower than the position of the ith contact, and is not limited to being formed on the pad portion 3, and may be formed on the wire 4 of the lead frame 15. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a semiconductor device according to an embodiment of the present invention. Fig. 2 is a side view showing a lead wire and a bump connected between a lead frame and a semiconductor wafer in a semiconductor device according to an embodiment of the present invention. Fig. 3 is a plan view showing a bump formed on a semiconductor wafer in a semiconductor device according to an embodiment of the present invention. 4(a) to 4(h) are explanatory views showing a step of forming a bump on a semiconductor wafer in a semiconductor device according to an embodiment of the present invention. Figs. 5(a) and 5(c) are cross-sectional views showing the lead cutting portion located on the upper surface of the bump in the half body device according to the embodiment of the present invention. Fig. 6 (4) and (4) are explanatory views showing the steps of the wire bonding to the bumps on the semiconductor wafer in the semiconductor device 36 200836277 of the embodiment of the present invention. Fig. 7 is a side view showing a lead wire and a bump between a lead frame and a semiconductor wafer in a semiconductor device according to another embodiment of the present invention. Figs. 8(a) to 8(f) are explanatory views showing a step of forming a bump on a semiconductor wafer in a semiconductor device according to another embodiment of the present invention. Figs. 9(a) to 9(d) are explanatory views showing a procedure of wire bonding a bump on a semiconductor wafer in a semiconductor device according to another embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view showing a lead wire and a bump between a lead frame and a semiconductor wafer in a semiconductor device not in another embodiment of the present invention. Fig. 11 is a plan view showing a bump and a lead formed on a semiconductor wafer in a semiconductor device according to another embodiment of the present invention. Fig. 2 (a) and (f) are explanatory views showing a step of forming a bump on a wafer of a semiconductor device in a semiconductor device according to another embodiment of the present invention. The figure shows a cross-sectional view of a cut portion of a lead located on a bump in a semiconductor device according to another embodiment of the present invention. Figs. 14(a) to 14(f) are explanatory views showing a step of bonding a wire to a bump in a semiconductor device according to another embodiment of the present invention. Figs. 15 (4) to (4) are explanatory views showing the steps of connecting the leads of the semiconductor device in the prior art. Fig. 16 is an explanatory view showing a step of connecting the leads of the semiconductor device in the prior art. Fig. 17 is a view showing the cutting of the lead of the semiconductor device in the prior art 37 200836277. Fig. 18 is an explanatory view showing bending deformation of a lead wire of a semiconductor device in the prior art. [Description of main component symbols] 2 Semiconductor wafer 3 Pad portion 4 Conductor 5 Ball 6 Crimp ball 12 Lead 14 Semiconductor device 15 Lead frame 16 Capillary 17 Clamping member 18 Lead tail section 19 Lead profile 20 Lead crushing section 21 Bump 21a1 Bump lead 21a 1st stage bump 21b 2nd stage bump 21c 3rd stage bump 22 Tilted wedge portion 38 200836277 25 1st lead bent convex portion 27 2nd lead bent convex portion 28 Lead profile 29 Lead profile 30 34 lead crushing portion 31 inner corner portion 32 corner portion 33 flat portion 35 outer diameter portion 37 straight hole 41, 43 lead shearing profile 39

Claims (1)

200836277 十、申請專利範圍： 1.一種半導體裝置，係藉引線連接第丨接點與第2接 點之間’其特徵在於，具備： 凸塊，係在第2接點上將引線f折積層而形成，於第 1接點之反向側包含引線彎折凸部；以及 引線，係從第1接點側向凸塊延伸而接合於凸塊上面， 於引線彎折凸部側包含剖面積小於引線剖面積的剖面。 2· —種半導體裝置，係藉引線連接第丨接點^第2接 點之間’其特徵在於，具備·· 凸塊，係在第2接點上將引線彎折積層而形成，於第 1接點側、第1接點之反向側包含引線彎折凸部；以及 引線，係從第1接點側向凸塊延伸而接合於凸塊上面， 於第1接點之反向側之引線彎折凸部侧包含剖面積小於引 線剖面積的剖面。 3.如申請專利範圍帛1項之半導體裝置，其中，凸塊 係在第2接點上將引線彎折積層而形成，在上面具有含傾 斜面之傾斜楔形部； 引線係沿傾斜楔形部而接合於凸塊上面。 如申請專利範圍f 2項之半導體裝置，其中，凸塊 係在第2接點上將引線彎折積層而形成，在上面具有含傾 斜面之傾斜楔形部； 引線係沿傾斜楔形部而接合於凸塊上面。 如申請專利範圍帛。項之半導體裝置，其中，凸塊 係在第2接點上將引線彎折積層而形成，具有含傾斜面之 200836277 傾斜楔形部，該傾斜面之傾斜，係從第i接點 接點之方向高度漸低； 引線係沿傾斜楔形部而接合於凸塊上面。 6 ·如申明專利範圍第1至5項中任1項之半導體裝置， 其中，剖面呈弓形剖面形狀。 7·一種半導體裝置，係藉引線連接第1接點與第2接 點之間，其特徵在於，具備：200836277 X. Patent application scope: 1. A semiconductor device which is connected between a second contact and a second contact by a lead wire. The feature is that: the bump is provided, and the lead f is folded on the second contact. Forming, the lead bending convex portion is included on the reverse side of the first contact; and the lead wire is extended from the first contact side to the bump to be bonded to the upper surface of the bump, and includes a cross-sectional area on the side of the lead bending convex portion A profile that is smaller than the cross-sectional area of the lead. 2. A semiconductor device is connected between a second contact and a second contact by a lead wire. The feature is that the bump is formed by bending a lead on the second contact. a contact side and a reverse side of the first contact include a lead bent convex portion; and a lead wire extending from the first contact side toward the bump and joined to the upper surface of the bump, on the reverse side of the first contact The side of the lead bent convex portion includes a cross section having a sectional area smaller than the sectional area of the lead. 3. The semiconductor device of claim 1, wherein the bump is formed by bending a lead on the second contact, and has an inclined wedge portion having an inclined surface thereon; the lead is along the inclined wedge portion Bonded to the top of the bump. The semiconductor device of claim 2, wherein the bump is formed by bending a lead wire at a second contact, and has an inclined wedge portion having an inclined surface thereon; the lead wire is bonded to the inclined wedge portion Above the bumps. For example, the scope of patent application is 帛. The semiconductor device of the present invention, wherein the bump is formed by bending a lead wire at a second contact, and has a 200836277 inclined wedge portion including an inclined surface, and the inclined surface is inclined from the contact point of the i-th contact The height is gradually lower; the lead is bonded to the bump along the inclined wedge. The semiconductor device according to any one of claims 1 to 5, wherein the cross section has an arcuate cross-sectional shape. A semiconductor device in which a lead wire is connected between a first contact and a second contact, and is characterized in that: 凸塊，係在第2接點上將引線彎折積層而形成，於第 1接點之反向側包含引線彎折凸部；以及 引線，係從第1接點側向凸塊延伸而接合於凸塊上面， 於引線彎折凸部側包含剪斷剖面與剖面積小於引線剖面積 之拉伸剖面。 、 8·—種半導體裝置，係藉引線連接第丨接點與第2接 點之間，其特徵在於，具備： 凸塊，係在第2接點上將引線彎折積層而形成，於第 1接點侧、第1接點之反向側包含引線彎折凸部；以及 引線，係從第1接點側向凸塊延伸而接合於凸塊上面， 於第1接點之反向側之引線彎折凸部側包含剪斷剖面與剖 面積小於引線剖面積之拉伸剖面。 9·如申請專利範圍第7項之半導體裝置，其中，凸塊 包含位在第1接點側之上面之傾斜楔形部，該傾斜楔形部 包含沿從第1接點向第2接點之方向高度漸低之傾斜面； 引線係沿傾斜楔形部接合於凸塊上面。 10·如申請專利範圍第8項之半導體裝置，其中，凸塊 200836277 包含位在f 1接點側之上面之傾斜楔形部，該傾斜楔形部 包含沿從帛1接點向第2接點之方向高度漸低之傾斜面； 引線係沿傾斜楔形部接合於凸塊上面。 11·如申請專利範圍帛8項之半導體裝置，其中，凸塊 匕3鄰接於第1接點側之引線彎折凸部且設置在其上面之 傾斜楔形部，該傾斜楔形部包含沿從帛i接點向第2接點 之方向高度漸低之傾斜面； 引線係沿傾斜楔形部接合於凸塊上面。 12.如申請專利範圍第7至n項中任一項之半導體裝 置’其中’剪斷剖面大致平行於包含帛2接點之半導體裝 置之面，拉伸剖面呈弓形剖面形狀。 、 1 3 · —種打線方法，係以引線連接半導體裝置之第1接 點與第2接點之間，其特徵在於，具有以下步驟： ^凸塊形成步驟，係在第2接點上將引線彎折積層，於 第1接點之反向側形成含有引線彎折凸部的凸塊； 接合步驟’係將引線從第i接點朝凸塊弧形前進，使 :細官之内導角部位在引線彎折凸部上部，藉由毛細管前 ^之平面部將引線緊壓於凸塊上面以接合引線，且藉由内 導角部將引線緊壓於引線f折凸部，以形成剖面積小於引 線剖面積之引線壓潰部；以及 引線切斷步驟，係將引線上拉並在引線壓潰部將引線 切斷。 ,14.如申請專利範圍第13項之打線方法，其中之凸塊 形成步驟，包含傾斜楔形部形成步驟，係在第2接點上將 42 200836277 引線彎折積層 斜楔形部； 藉毛細管前端之平面部緊麼引線以形成傾 接合步驟，係將引線緊壓於傾斜楔形部以接合。 15·如申請專利範圍第13或14項之打線方法，其中， 引線壓潰部呈弓形剖面形狀。 16· —種打線方法，係以引線連接半導體裝置之第^ 接點與第2接點之間，其特徵在於，具有以下步驟： ^凸塊形成步驟，係在第2接點上將引線彎折積層，於 第1接點之反向侧形成含有引線彎折凸部的凸塊； 接合步驟，係將引線從第i接點朝凸塊弧形前進，藉 毛細管前端之平面部將引線緊壓於凸塊上面以接合引線；曰 引線壓潰部形成步驟，係將毛細管從凸塊上面上升至 前端高度低於引線彎折凸部上端高度後，將毛細管從第i 接點朝引線彎折凸部之方向移動，藉毛細管之角部將引線 之一部分予以與斷，且藉由毛細管之内導角部將引線緊壓 於引線彎折凸部，形成剖面積小於引線剖面積之引線壓潰 部；以及 引線切斷步驟’係將引線上拉並在引線壓潰部將引線 切斷。 17· —種打線方法，係以引線連接半導體裝置之第1接 點與第2接點之間，其特徵在於，具備以下步驟： 凸塊形成步驟’係在第2接點上將引線彎折積層而在 第1接點之反向側形成引線彎折凸部， 藉毛細管前端之平面部緊壓引線以在第1接點側之上 43 200836277 η 面形成傾斜楔形部， 將毛細官從傾斜楔形部上面上升至前端高度低於引線 穹折凸部卜w t & μ 立 舳阿度後，將毛細管從傾斜楔形部朝引線彎折 ，邛之=向移動，藉毛細管之角部將引線之一部分予以剪 ^ 藉由毛細管之内導角部將引線緊壓於引線彎折凸 ^形成剖面積小於引線剖面積之引線壓潰部， 將引線上拉並在引線壓潰部將引線切斷； 步驟，係將引線從第1接點朝凸塊弧形前進，藉 由毛細管前端之平面部將引線緊壓於傾斜模形部上面以接 合引線； 引«潰部形成步驟，係將毛細管從傾斜横形部上面 上升至前端高度低於引線f折凸部上端高度後，將毛細管 從傾斜楔形部朝引線彎折凸部之方向移動，藉毛細管之角 部將引線之-部分予以剪斷，且藉由毛細管之内導角部將 弓丨線緊壓於引線·弯折凸部，形成剖面積小於引線剖面積之 引線壓潰部；以及 引線切斷步驟，係將引線上拉並在引線壓潰部將引線 切斷。 一18.如申請專利範圍第16或17項之打線方法其中， 被剪斷之面’大致平行於包含第2接點之半導體裝置之面； 引線壓潰部呈弓形剖面形狀。 十一、圈式： 如次頁 44The bump is formed by bending a lead wire at a second contact, and includes a lead bent convex portion on a reverse side of the first contact; and a lead extending from the first contact side to the bump to be joined On the upper side of the bump, the side of the bent portion of the lead includes a sheared section and a tensile section having a cross-sectional area smaller than the cross-sectional area of the lead. And a semiconductor device is connected between the second contact and the second contact by a lead wire, and is characterized in that: the bump is formed by bending a lead at a second contact, and forming a contact side and a reverse side of the first contact include a lead bent convex portion; and a lead wire extending from the first contact side toward the bump and joined to the upper surface of the bump, on the reverse side of the first contact The side of the lead bending convex portion includes a shearing section and a tensile section having a sectional area smaller than a sectional area of the lead. 9. The semiconductor device of claim 7, wherein the bump comprises an inclined wedge portion located above the first contact side, the inclined wedge portion including the direction from the first contact point to the second contact point An inclined surface that is gradually lowered in height; the lead wire is joined to the upper surface of the bump along the inclined wedge portion. 10. The semiconductor device of claim 8, wherein the bump 200836277 includes an inclined wedge portion located above the f 1 contact side, the inclined wedge portion including the contact from the 帛1 contact to the second contact An inclined surface having a gradually decreasing height; the lead wire is joined to the upper surface of the bump along the inclined wedge portion. 11. The semiconductor device of claim 8, wherein the bump 匕 3 is adjacent to the lead bent portion of the first contact side and is provided with an inclined wedge portion thereon, the inclined wedge portion including the 楔 帛The i-contact is inclined to a height that is gradually lower toward the second contact; the lead is bonded to the upper surface of the bump along the inclined wedge. 12. The semiconductor device of any one of claims 7 to n wherein the shearing profile is substantially parallel to the face of the semiconductor device comprising the 帛2 contact, the tensile profile having an arcuate cross-sectional shape. And a method of bonding a wire between the first contact and the second contact of the semiconductor device by a lead wire, characterized in that the method has the following steps: ^ The bump forming step is performed on the second contact The lead bends the laminate to form a bump containing the lead bent convex portion on the reverse side of the first contact; the bonding step 'advances the lead from the i-th contact toward the convex arc to make the inner guide The corner portion is on the upper portion of the lead bending convex portion, and the lead wire is pressed against the convex portion by the flat portion of the capillary front portion to bond the lead wire, and the lead wire is pressed against the lead wire f by the inner guiding corner portion to form a convex portion The lead crushing portion having a sectional area smaller than the lead sectional area; and the lead cutting step pull the lead up and cut the lead at the lead crushing portion. 14. The wire bonding method of claim 13, wherein the bump forming step comprises the step of forming the inclined wedge portion, and the 42 200836277 lead is bent at the second contact to bend the wedge portion; The flat portion is tightly bent to form a tilt bonding step, and the lead is pressed against the inclined wedge portion to be joined. 15. The wire bonding method of claim 13 or 14, wherein the lead crushing portion has an arcuate cross-sectional shape. 16. The method of wire bonding is to connect a second contact between a second contact and a second contact of a semiconductor device, and is characterized in that: the bump forming step is to bend the lead at the second contact. a folding layer is formed on the opposite side of the first contact to form a bump including a lead bent convex portion; in the bonding step, the lead wire is advanced from the i-th contact point toward the convex block, and the lead wire is tightened by the flat portion of the front end of the capillary Pressing on the bump to bond the lead; the step of forming the lead crimping portion, the capillary is raised from the upper surface of the bump until the height of the front end is lower than the height of the upper end of the bent portion of the lead, and the capillary is bent from the ith contact toward the lead The direction of the convex portion is moved, and a part of the lead wire is broken by the corner portion of the capillary tube, and the lead wire is pressed against the lead bending convex portion by the inner corner portion of the capillary tube to form a lead crushing having a sectional area smaller than the lead sectional area. And the lead cutting step' pulls up the lead and cuts the lead at the lead crushing portion. 17. A method of bonding a wire between a first contact and a second contact of a semiconductor device by a lead wire, characterized in that the step of forming a bump is to bend the lead at the second contact. Laminating and forming a lead bent convex portion on the opposite side of the first contact, and pressing the lead by the flat portion of the front end of the capillary to form an inclined wedge portion on the first contact side 43 200836277 η surface, tilting the capillary officer from the tilt The upper part of the wedge rises to a height lower than the front end of the lead, and the thickness of the flange is lower than that of the lead, and the capillary is bent from the inclined wedge toward the lead, and the direction of the bend is moved, and the lead is led by the corner of the capillary. Part of the cutting is performed by pressing the lead in the capillary to press the lead to bend the lead to form a lead crushing portion having a sectional area smaller than the sectional area of the lead, pulling the lead up and cutting the lead at the lead crushing portion; In the step, the lead wire is advanced from the first contact point toward the convex block, and the lead wire is pressed against the inclined mold portion by the flat portion of the front end of the capillary to engage the lead wire; the step of forming the crushing portion is to tilt the capillary tube from the tilting step horizontal After the upper portion of the shape rises to a height lower than the height of the front end of the lead f, the capillary is moved from the inclined wedge portion toward the bent portion of the lead, and the portion of the lead is cut by the corner of the capillary, and the borrowing is performed. Pressing the bow line from the inner corner of the capillary to the lead/bending convex portion to form a lead crushing portion having a sectional area smaller than the lead sectional area; and the lead cutting step, pulling the lead up and crushing the lead The part cuts the lead. 18. The wire bonding method of claim 16 or 17, wherein the cut surface is substantially parallel to a surface of the semiconductor device including the second contact; and the lead crushing portion has an arcuate cross-sectional shape. Eleven, circle: as the next page 44
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