CN101246947A - Multilevel semiconductor cascade refrigeration element and refrigeration thermopile - Google Patents
Multilevel semiconductor cascade refrigeration element and refrigeration thermopile Download PDFInfo
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- CN101246947A CN101246947A CNA2008100175778A CN200810017577A CN101246947A CN 101246947 A CN101246947 A CN 101246947A CN A2008100175778 A CNA2008100175778 A CN A2008100175778A CN 200810017577 A CN200810017577 A CN 200810017577A CN 101246947 A CN101246947 A CN 101246947A
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Abstract
The present invention discloses a multilevel semiconductor cascade refrigeration element and refrigeration thermopile. Multilevel semiconductor cascade refrigeration element is cascaded from the first level to the nth level refrigeration galvanic, each level of refrigeration galvanic comprises of p type semiconductor and n type semiconductor in paired, the cold end on the top of the first refrigeration galvanic has connection tablet to connect heat-conducting plate of cold end, the hot end on the bottom of Nth level refrigeration galvanic has hot end connection tablet to connect heat-conducting plate of hot end. Wherein, the section of each of level refrigeration galvanic is identical, and the length of galvanic arm becomes shorter and shorter from the first level to the Nth. Connection tablet are set among all refrigeration galvanic cascade surfaces, and levels of refrigeration galvanic connected by electrical connection in parallel and hot connection in series. Because in the refrigeration galvanic employing non-isolength galvanic arm multilevel cascade structure type, insulation layer isn't between levels, additional heat transfer thermal resistance and thermal leak loss between levels are reduced, so the refrigeration capability of multilevel refrigeration element and thermopile are enhanced efficiently.
Description
Technical field
The refrigeration thermoelectric pile that the present invention relates to a kind of semiconductor refrigerating element and combine, particularly a kind of multilevel semiconductor cascade refrigeration element and the refrigeration thermoelectric pile that combines thereof.
Background technology
That semiconductor refrigerating element (as semiconductor chilling plate) has is simple in structure, compact and can fast cooling etc. characteristics, be widely used in the refrigeration device in fields such as commerce, electronics, medical treatment, military affairs and Aero-Space.The maximum refrigeration temperature difference that common single-stage semiconductor refrigerating element can produce is about 70 ℃.The major defect of semiconductor refrigerating is that its coefficient of performance of refrigerating is low, and this mainly is because little the causing of figure of merit of present thermoelectric material itself.In the semiconductor refrigerating element that adopts single-stage galvanic couple refrigeration, along with the reduction of cryogenic temperature (cold junction temperature), coefficient of performance of refrigerating can significantly reduce.Therefore, lacking at present under the better thermoelectric material situation, improving the semiconductor refrigerating coefficient of performance by the structural design of improving the semiconductor refrigerating element and also just become one of research and development direction important in this technical field.Studies show that in the cryogenic temperature scope of general single-stage semiconductor refrigerating element application, if adopt the multilevel semiconductor cooling module then can improve the semiconductor refrigerating coefficient of performance, particularly when lower cryogenic temperature, the improvement situation is more remarkable.For obtaining the bigger refrigeration temperature difference, generally form the multi-stage refrigerating element with series, parallel and series-parallel method.Because semiconductor refrigerating element radiating amount is much larger than refrigerating capacity, the structural shape of multilevel semiconductor cooling module adopts pagoda type more at present, refrigeration galvanic couple arm lengths in each grade is identical, and the refrigeration galvanic couple number of high temperature level sectional area more much bigger than low temperature level or the galvanic couple arm is bigger.Yet, in this pagoda type structure, when circuit connects the employing tandem type, need one deck electric-insulation heat-conduction layer between level and the level, increased additional heat transfer resistance; Though can adopt the parallel connection type circuit to connect, level with grade between need not the electric-insulation heat-conduction layer, the pagoda type structure itself also can cause bigger leakage thermal loss.Generally speaking, the substantive raising of the refrigeration performance of pagoda type multilevel semiconductor cooling module can be subjected to restriction to a certain degree.
Summary of the invention
Existing above-mentioned defective of multilevel semiconductor cooling module or deficiency at existing pagoda type structure the object of the present invention is to provide a kind of multilevel semiconductor cascade refrigeration element based on non-isometric galvanic couple arm.For improving the refrigeration performance of semiconductor refrigerating element, another object of the present invention provides a kind of refrigeration thermoelectric pile of forming with this multilevel semiconductor cascade refrigeration element.
The present invention realizes that the technical solution of above-mentioned purpose is:
A kind of multilevel semiconductor cascade refrigeration element, be formed by stacking by the first order to the N level refrigeration galvanic couple, each grade refrigeration galvanic couple is made of in pairs p N-type semiconductor N and n N-type semiconductor N, first order refrigeration galvanic couple top cold junction is provided with brace and connects the cold junction heat-conducting plate, N level refrigeration hot junction, galvanic couple bottom is provided with the hot junction brace and connects the hot junction heat-conducting plate, it is characterized in that the cross section of described each grade refrigeration galvanic couple is identical, and the length of galvanic couple arm is reduced step by step by the first order to the N level; Be provided with the galvanic couple brace between the folded face of refrigeration galvanic couples at different levels, make the electrical connection in parallel and the hot link of connecting between refrigeration galvanic couple level and the level.
In the above scheme, the N of described N level is 2-8, is preferably 2-4.Described brace is copper sheet or silver strip.
The refrigeration thermoelectric pile that the above-mentioned multilevel semiconductor cascade refrigeration of a kind of usefulness element is formed, it is characterized in that, comprise a plurality of cold junction heat-conducting plates and the hot junction heat-conducting plate multilevel semiconductor cascade refrigeration element that fuses of level respectively, connect DC power supply by the hot junction brace back that is connected in series by lead between the refrigeration galvanic couple of each cascade refrigeration element.
The refrigeration thermoelectric pile overall structure pattern of multilevel semiconductor cascade refrigeration element of the present invention and formation thereof is simple relatively, manufacturing cost increases few, multi-stage refrigerating element than conventional pagoda-shaped, owing in the refrigeration galvanic couple, adopted the multistage overlapping frame mode of non-isometric galvanic couple arm, there is not electric insulation layer between level and the level, reduce the additional heat transfer resistance of inter-stage and leaked thermal loss, therefore can effectively improve the refrigeration performance of multi-stage refrigerating element and thermoelectric pile.Simultaneously, for parallel circuits is connected, and be the series circuit connection between each cascade refrigeration element between refrigeration galvanic couple middle rank and the level, whole thermoelectric pile only need a pair of cable adapter, therefore from the application in future, multilevel semiconductor cascade refrigeration element of the present invention and refrigeration thermoelectric pile are very easy to use.Has remarkable advantages.
Description of drawings
Fig. 1 is the structural representation of multilevel semiconductor cascade refrigeration element of the present invention.
Fig. 2 is the structural representation that Fig. 1 semiconductor cascade refrigeration element is formed a kind of thermoelectric pile.
Among Fig. 1, Fig. 2: 1, n N-type semiconductor N; 2, cold junction heat-conducting plate; 3, p N-type semiconductor N; 4, galvanic couple arm; 5, galvanic couple brace; 6, hot junction brace; 7, hot junction heat-conducting plate; 8, lead.
Embodiment
The present invention is described in further detail below in conjunction with drawings and the specific embodiments.
As shown in Figure 1, multilevel semiconductor cascade refrigeration element forms to N level refrigeration galvanic couple overlapping by the 1st grade, N can require to be selected in 2 to 8 according to cryogenic temperature, each grade refrigeration galvanic couple is made of in pairs p N-type semiconductor N 3 and n N-type semiconductor N 1, refrigeration galvanic couple cross section between the adjacent two-stage is identical, and it all is to realize by identical galvanic couple brace (copper sheet or silver strip) 5 that heat connects with electrically connecting; The p type of the 1st grade of refrigeration galvanic couple top cold junction and n N- type semiconductor N 3,1 and galvanic couple brace 5 in series weld together, and its galvanic couple arm 4 is provided with certain-length h1; The brace 5 that is connected with the 1st grade of refrigeration galvanic couple cold junction is connected with the cold junction heat-conducting plate 2 of electric insulation.The 2nd grade p type and n N- type semiconductor N 3,1 and brace 5 also in series weld together and also weld together with the 1st grade galvanic couple arm 4 simultaneously; 3rd level all adopts above-mentioned connected mode to the N level; N level refrigeration hot junction, galvanic couple bottom is provided with p N-type semiconductor N 3 and the n N-type semiconductor N 1 that two hot junction braces 6 connect this refrigeration galvanic couple respectively, and is connected with the hot junction heat-conducting plate 7 of electric insulation.Semi-conducting material adopts commercial at present based on Bi
2Te
3Solid solution alloy.Electric-insulation heat- conduction plate 2,7 adopts boron nitride ceramics plate, beryllium oxide or the alumina ceramic plate of surface metalation, and thickness is 0.5-1.0mm.
The length of every grade of galvanic couple arm 4 reduces from top to bottom according to certain rules step by step, and to guarantee the heat balance between the adjacent two-stage, promptly the hot junction liberated heat of upper level is all absorbed by the cold junction of next stage.This is because the fundamental formular of semiconductor refrigerating theory shows: under the constant situation of other condition, the refrigerating capacity of the thermocouple that a pair of semiconductor refrigerating element constitutes increases along with reducing of galvanic couple arm lengths; It is under the heat balance and balance of voltage condition that guarantee between the adjacent two-stage that every grade of galvanic couple arm 4 length reduce according to certain rules step by step, by setting under the best coefficient of performance of refrigerating situation, and supplies with corresponding work electric current I i (i=1,2 accordingly ..., n).
A specific embodiment is to adopt 3 grades of level semiconductor cascade refrigeration elements, and its every grade refrigeration galvanic couple galvanic couple arm (n type or p type) sectional area is A=6 * 6mm
2, the length h1 of the 1st grade of galvanic couple arm 4 is 4.2mm, and the length h2 of the 2nd grade of galvanic couple arm 4 is 2.9mm, and the length h3 of 3rd level galvanic couple arm 4 is 2.0mm, reduces step by step with the equal proportion rule.Electric-insulation heat- conduction plate 2,7 adopts the alumina ceramic plate of surface metalation, and thickness is 1.0mm.Formed semiconductor cascade refrigeration element is square.
As shown in Figure 2, a kind of refrigeration thermoelectric pile comprises a plurality of (as 12 or 16) multilevel semiconductor cascade refrigeration element shown in Figure 1 connects DC power supply E by hot junction brace 6 back that is connected in series by lead 8 between the hot junction of each cascade refrigeration element afterbody refrigeration galvanic couple.Each cascade refrigeration element connects and composes the thermoelectric pile of square or rectangular through appropriate combination, and their cold junction brace 5, hot junction brace 6 fuse with electric-insulation heat-conduction plate 2 and electric-insulation heat-conduction plate 7 weld horizontal respectively, to fix thermoelectric pile.Load onto heat dump on the cold junction heat-conducting plate 2, the hot junction heat-conducting plate is loaded onto radiator 7 times, then can constitute practical semiconductor cooling device.
Claims (4)
1. multilevel semiconductor cascade refrigeration element, be formed by stacking by the first order to the N level refrigeration galvanic couple, each grade refrigeration galvanic couple is made of in pairs p N-type semiconductor N and n N-type semiconductor N, first order refrigeration galvanic couple top cold junction is provided with brace and connects the cold junction heat-conducting plate, N level refrigeration hot junction, galvanic couple bottom is provided with the hot junction brace and connects the hot junction heat-conducting plate, it is characterized in that the cross section of described each grade refrigeration galvanic couple is identical, and the length of galvanic couple arm is reduced step by step by the first order to the N level; Be provided with the galvanic couple brace between the folded face of refrigeration galvanic couples at different levels, make the electrical connection in parallel and the hot link of connecting between refrigeration galvanic couple level and the level.
2. multilevel semiconductor cascade refrigeration element as claimed in claim 1 is characterized in that the N of described N level is 2-8, is preferably 2-4.
3. multilevel semiconductor cascade refrigeration element as claimed in claim 1 or 2 is characterized in that described brace is copper sheet or silver strip.
4. refrigeration thermoelectric pile of forming with the described multilevel semiconductor cascade refrigeration of claim 1 element, it is characterized in that, comprise a plurality of cold junction heat-conducting plates and the hot junction heat-conducting plate multilevel semiconductor cascade refrigeration element that fuses of level respectively, connect DC power supply by the hot junction brace back that is connected in series by lead between the refrigeration galvanic couple of each cascade refrigeration element.
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| CN102647893A (en) * | 2012-05-17 | 2012-08-22 | 吉林大学 | Longitudinal cascade type integrated constant temperature radiator module |
| CN103811652A (en) * | 2014-01-22 | 2014-05-21 | 杜效中 | Novel thermoelectric semiconductor device manufacturing method capable of separating cold end and hot end |
| CN103827601A (en) * | 2011-09-21 | 2014-05-28 | 英派尔科技开发有限公司 | Heterogeneous electrocaloric effect heat transfer |
| CN104075483A (en) * | 2013-03-31 | 2014-10-01 | 赵兴龙 | Semiconductor cooler with hot end and cold end at long distance with each other |
| CN104188315A (en) * | 2014-09-04 | 2014-12-10 | 重庆大学 | Hair drier capable of being cooled quickly |
| US9157669B2 (en) | 2011-04-20 | 2015-10-13 | Empire Technology Development Llc | Heterogeneous electrocaloric effect heat transfer device |
| US9310109B2 (en) | 2011-09-21 | 2016-04-12 | Empire Technology Development Llc | Electrocaloric effect heat transfer device dimensional stress control |
| US9318192B2 (en) | 2012-09-18 | 2016-04-19 | Empire Technology Development Llc | Phase change memory thermal management with electrocaloric effect materials |
| CN105633264A (en) * | 2016-02-29 | 2016-06-01 | 东南大学 | Thermoelectric battery with series-wound electric leg structure |
| US9500392B2 (en) | 2012-07-17 | 2016-11-22 | Empire Technology Development Llc | Multistage thermal flow device and thermal energy transfer |
| US9508913B2 (en) | 2010-06-18 | 2016-11-29 | Empire Technology Development Llc | Electrocaloric effect materials and thermal diodes |
| CN108711588A (en) * | 2018-04-16 | 2018-10-26 | 西北工业大学 | A kind of high efficiency thermoelectric module with multistage temperature-control coating |
| CN109065698A (en) * | 2018-08-16 | 2018-12-21 | 东北大学 | Using the two-stage semiconductor thermoelectric module of optimal thermoelectric arm height |
| CN109357328A (en) * | 2018-10-17 | 2019-02-19 | 宁波奥克斯电气股份有限公司 | A kind of electric-controlled plate controller for heat sink and method and air conditioner |
| CN110260556A (en) * | 2019-05-06 | 2019-09-20 | 武汉理工大学 | Thermoelectric cooling device and preparation method thereof |
| CN112242480A (en) * | 2020-09-30 | 2021-01-19 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Thermoelectric refrigeration method for chip-level electronic equipment |
| WO2024109547A1 (en) * | 2022-11-21 | 2024-05-30 | 深圳市蓝禾技术有限公司 | Portable air conditioner |
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2008
- 2008-02-29 CN CN200810017577A patent/CN100592542C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9508913B2 (en) | 2010-06-18 | 2016-11-29 | Empire Technology Development Llc | Electrocaloric effect materials and thermal diodes |
| US9157669B2 (en) | 2011-04-20 | 2015-10-13 | Empire Technology Development Llc | Heterogeneous electrocaloric effect heat transfer device |
| CN103827601B (en) * | 2011-09-21 | 2016-08-17 | 英派尔科技开发有限公司 | Heterogeneous electrocaloric effect heat transfer |
| US9671140B2 (en) | 2011-09-21 | 2017-06-06 | Empire Technology Development Llc | Heterogeneous electrocaloric effect heat transfer |
| CN103827601A (en) * | 2011-09-21 | 2014-05-28 | 英派尔科技开发有限公司 | Heterogeneous electrocaloric effect heat transfer |
| US9310109B2 (en) | 2011-09-21 | 2016-04-12 | Empire Technology Development Llc | Electrocaloric effect heat transfer device dimensional stress control |
| CN102647893A (en) * | 2012-05-17 | 2012-08-22 | 吉林大学 | Longitudinal cascade type integrated constant temperature radiator module |
| US9500392B2 (en) | 2012-07-17 | 2016-11-22 | Empire Technology Development Llc | Multistage thermal flow device and thermal energy transfer |
| US9318192B2 (en) | 2012-09-18 | 2016-04-19 | Empire Technology Development Llc | Phase change memory thermal management with electrocaloric effect materials |
| CN104075483A (en) * | 2013-03-31 | 2014-10-01 | 赵兴龙 | Semiconductor cooler with hot end and cold end at long distance with each other |
| CN103811652A (en) * | 2014-01-22 | 2014-05-21 | 杜效中 | Novel thermoelectric semiconductor device manufacturing method capable of separating cold end and hot end |
| CN104188315A (en) * | 2014-09-04 | 2014-12-10 | 重庆大学 | Hair drier capable of being cooled quickly |
| CN105633264A (en) * | 2016-02-29 | 2016-06-01 | 东南大学 | Thermoelectric battery with series-wound electric leg structure |
| CN108711588B (en) * | 2018-04-16 | 2019-12-20 | 西北工业大学 | High-efficiency thermoelectric module with multi-stage temperature regulating layers |
| CN108711588A (en) * | 2018-04-16 | 2018-10-26 | 西北工业大学 | A kind of high efficiency thermoelectric module with multistage temperature-control coating |
| CN109065698A (en) * | 2018-08-16 | 2018-12-21 | 东北大学 | Using the two-stage semiconductor thermoelectric module of optimal thermoelectric arm height |
| CN109357328A (en) * | 2018-10-17 | 2019-02-19 | 宁波奥克斯电气股份有限公司 | A kind of electric-controlled plate controller for heat sink and method and air conditioner |
| CN110260556A (en) * | 2019-05-06 | 2019-09-20 | 武汉理工大学 | Thermoelectric cooling device and preparation method thereof |
| CN110260556B (en) * | 2019-05-06 | 2021-06-08 | 武汉理工大学 | Thermoelectric refrigerating device and preparation method thereof |
| CN112242480A (en) * | 2020-09-30 | 2021-01-19 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Thermoelectric refrigeration method for chip-level electronic equipment |
| WO2024109547A1 (en) * | 2022-11-21 | 2024-05-30 | 深圳市蓝禾技术有限公司 | Portable air conditioner |
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