CN101236996A - 树脂密封型半导体受光元件及其制造方法和电子设备 - Google Patents
树脂密封型半导体受光元件及其制造方法和电子设备 Download PDFInfo
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Abstract
本发明涉及用透明树脂密封受光元件的树脂密封型半导体受光元件及其制造方法和使用该树脂密封型半导体受光元件的电子设备。本发明的一实施方式的树脂密封型半导体受光元件,是用透明树脂密封装载在电路基板上的受光元件,以使该受光元件的受光面露出的方式,用透明环氧树脂密封所述电路基板的装载有该受光元件的装载面,至少该受光元件的受光面由透明有机硅树脂密封。
Description
技术领域
本发明涉及用透明树脂密封受光元件的树脂密封型半导体受光元件及其制造方法和使用该树脂密封型半导体受光元件的电子设备。
背景技术
在光传感器或光拾取器用传感器等的技术领域中,大多使用树脂密封型的器件,该树脂密封型的器件将半导体元件芯片装载在基板上,并用透明树脂密封该芯片(参照(日本国)特开平1-209733号公报、(日本国)特许第3702998号公报、(日本国)特许第3710942号公报、(日本国)特开2004-79683号公报)。
通常,作为密封用透明树脂使用透明环氧树脂、透明有机硅树脂等热固性树脂。
另外,作为密封方法多采用:通过使用模具的传递成型而树脂密封半导体元件芯片的方法;在包围半导体元件芯片的配置区域的模框内滴下液状树脂(浇注),并利用烘箱等加热固化该液状树脂,从而树脂密封半导体元件芯片的方法。
另一方面,在光拾取器的技术领域中,为了能够进行高密度的记录再生,而正推进半导体激光器的短波长化,近年已开发出使用蓝色半导体激光器的光拾取器。而且,半导体激光器的功率监测用受光元件等,实现了与蓝色激光对应的树脂密封型受光元件的产品化。
即使是这样的受光元件的密封树脂,作为其代表性的有透明环氧树脂或透明有机硅树脂,但透明环氧树脂存在因蓝色等短波长光引起劣化,使其透过率变差的缺点。因此,作为密封用于监测蓝色激光的功率的受光元件的树脂,多采用对于短波长光具有优良的耐光性的透明有机硅树脂。
图7是表示用透明有机硅树脂密封受光元件的现有的树脂密封型半导体受光元件的剖面图。该现有的树脂密封型半导体受光元件101,是在电路基板102上装载受光元件芯片103,通过连接线104连接电路基板102的布线图案和受光元件芯片103的电极,利用透明有机硅树脂105密封电路基板102的装载面、受光元件芯片103及连接线104。
然而,在如图7所示的现有的树脂密封型半导体受光元件101中,因为使用对于短波长光具有优良的耐光性的透明有机硅树脂105,所以存在如下问题。
即,透明有机硅树脂105与透明环氧树脂相比,其固化收缩率大,固化后的树脂内部应力(内部应变)大。因此,在温度循环试验等的可靠性试验中,容易发生在树脂内部的连接线的断线或在树脂与电路基板界面产生剥离等不良情况,与使用透明环氧树脂的情况相比,应对温度循环等的环境变化的耐久性变差,可靠性低。
发明内容
本发明是为了解决所存在的问题而提出的,其目的在于提供一种树脂密封型半导体受光元件及其制造方法和使用该树脂密封型半导体受光元件的电子设备,所述树脂密封型半导体受光元件即使使用透明有机硅树脂,应对温度循环等环境变化的耐久性也优良,并且可靠性高。
为了解决上述课题,本发明提供一种树脂密封型半导体受光元件,其用透明树脂密封被装载在电路基板上的受光元件,其中,以使所述受光元件的受光面露出的方式,用透明环氧树脂密封所述电路基板的装载有该受光元件的装载面,至少将该受光元件的受光面用透明有机硅树脂密封。
在这样的本发明的树脂密封型半导体受光元件中,以使受光元件的受光面露出的方式,用透明环氧树脂密封电路基板的装载该受光元件的装载面,至少将该受光元件的受光面用透明有机硅树脂密封。因此,电路基板的装载面及电路基板上的连接线的连接部位等,由透明环氧树脂密封,由于该透明环氧树脂的固化收缩率小,所以固化后的树脂内部应力(内部应变)小,因此,不会发生树脂内部的连接线的断线或树脂与电路基板界面的剥离等不良情况,对于温度循环等环境变化的耐久性优良,可以得到高的可靠性。
另外,至少受光元件的受光面用透明有机硅树脂密封,由于该透明有机硅树脂对短波长光具有优良的耐光性,因此不会损害受光元件的受光特性。
另外,本发明提供一种树脂密封型半导体受光元件的制造方法,包括:在电路基板上装载多个受光元件的工序;分别将各所述受光元件与所述电路基板电连接的工序;以使各所述受光元件的受光面露出的方式,用透明环氧树脂密封所述电路基板的装载有该各受光元件的装载面的工序;用透明有机硅树脂密封各所述受光元件的受光面及所述透明环氧树脂上面的工序;以及通过切割而切断所述电路基板、所述透明环氧树脂及所述透明有机硅树脂,分离该电路基板上的各所述受光元件的工序。
利用本发明的树脂密封型半导体受光元件的制造方法,可以同时制造出多个上述本发明的树脂密封型半导体受光元件。
而且,本发明的电子设备使用上述本发明的树脂密封型半导体受光元件。
如上所述,由于本发明的电子设备使用上述本发明的树脂密封型半导体受光元件,因此,可以得到与该树脂密封型半导体受光元件同样的作用效果,进而可以提高电子设备本身的耐久性。
附图说明
图1是表示本发明的树脂密封型半导体受光元件的一实施方式的剖面图;
图2是表示对于图1的实施方式的树脂密封型半导体受光元件和现有的半导体受光元件进行温度循环试验的试验结果的曲线图;
图3是表示本发明的制造方法的一实施方式的图;
图4是表示本发明的制造方法的一实施方式的图;
图5是表示本发明的制造方法的一实施方式的图;
图6是表示本发明的制造方法的一实施方式的图;
图7是表示现有的树脂密封型半导体受光元件的剖面图。
具体实施方式
下面,参照附图详细说明本发明的实施方式。
图1是表示本发明的树脂密封型半导体受光元件的一实施方式的剖面图。本实施方式的树脂密封型半导体受光元件1,在光拾取器的技术领域中被用于蓝色半导体激光器的功率监测。
在该树脂密封型半导体受光元件1中,受光元件芯片12通过导电性糊粘结在电路基板11的装载面11a上设置的芯片装载部11d。另外,受光元件芯片12的电极(图中未示出),通过由Au构成的连接线13,与设置在电路基板11的装载面11a上的布线图案端子部11p连接。
而且,以使受光元件芯片12的受光面12a露出的方式,用透明环氧树脂层14密封电路基板11的装载面11a,进而用透明有机硅树脂层15密封受光元件芯片12的受光面12a和透明环氧树脂层14的上面14a。
透明环氧树脂层14和透明有机硅树脂层15,是在以包围受光元件芯片12的配置区域的方式设置的模框内,滴下(浇注)液状的透明环氧树脂或透明有机硅树脂,通过烘箱等将液状的树脂加热固化而形成。所述模框通过使用模具在电路基板11上镶嵌成型的方法或使用粘接剂粘贴在电路基板11上的方法等可以形成。
结果,可以通过透明环氧树脂层14密封电路基板11的装载面11a和电路基板11上的连接线13的连接部位(二次连接部位)等。另外,通过透明有机硅树脂层15密封受光元件芯片12的受光面12a。
在此,因为透明有机硅树脂与透明环氧树脂相比,其固化收缩率大,所以固化后的透明有机硅树脂内部应力(内部应变)大。因此,例如当进行温度循环试验等的可靠性试验时,容易发生树脂与电路基板界面的剥离或树脂内部的连接线的断线(主要为二次连接部位的断线)等不良情况。
与此相对,透明环氧树脂因为其固化收缩率小,所以固化后的透明环氧树脂内部应力(内部应变)小。因此,如本实施方式,通过透明环氧树脂层14密封电路基板11的装载面11a和电路基板11上的连接线13的连接部位等,即使使透明环氧树脂层14固化,透明环氧树脂层14和电路基板11的装载面11a界面的剥离也难以发生,且透明环氧树脂层14内部的连接线13的断线也难以发生。即使进行温度循环试验等可靠性试验,也不会发生如前所述的剥离或断线,可以达到充分高的可靠性。
在本实施方式中,控制透明环氧树脂层14的厚度,以使通过透明环氧树脂层14可靠地密封电路基板11的装载面11a和连接线13的连接部位,由此可以再现高的可靠性。
同时,通过控制透明环氧树脂层14的厚度,使其厚度比受光元件芯片12的厚度薄,使受光元件芯片12的受光面12a不被透明环氧树脂层14覆盖。结果,能够仅通过透明有机硅树脂层15覆盖受光元件芯片12的受光面12a进行密封,使光只通过该透明有机硅树脂层15而入射到受光元件芯片12的受光面12a。
如前所述,由于本实施方式的树脂密封型半导体受光元件1用于蓝色半导体激光器的功率监测,因此,使光只通过对短波长光具有优良的耐光性的透明有机硅树脂层15,而入射到受光元件芯片12的受光面12a,防止发生受光特性的下降等。假设光通过透明环氧树脂层14入射,则透明环氧树脂层14会因短波长光而劣化,其透过率变差,从而发生受光特性下降等。
图2的曲线图表示对于本实施方式的树脂密封型半导体受光元件1和仅由透明有机硅树脂密封的现有的半导体受光元件进行温度循环试验的试验结果。该试验在反复-40℃~+100℃的温度循环的环境下,检查树脂密封型半导体受光元件1和现有的半导体受光元件的不良发生率(连接线的断线发生率)。
从图2的曲线图可以看出,本实施方式的树脂密封型半导体受光元件1,即使在2000次循环后也没有发生不良情况,可以得到极高的可靠性。
与此相对,现有的半导体受光元件在100次循环左右就发生不良情况,在500次循环后不良率达40%,可靠性明显处于劣势。
下面,参照图3~图6说明本发明的制造方法的一实施方式。根据本实施方式的制造方法,同时制造出多个图1所示的树脂密封型半导体受光元件1。
首先,如图3所示,在电路基板11A的装载面11a涂覆导电性糊等,将多个受光元件芯片12排列并装载粘结在装载面11a,对每个受光元件芯片12,通过由Au等构成的连接线13,将受光元件芯片12的电极(图中未示出)与电路基板11A的布线图案端子部11p连接。
其次,如图4所示,将液状的透明环氧树脂滴在电路基板11A的装载面11a(浇注),用透明环氧树脂层14覆盖电路基板11A的装载面11a和电路基板11A上的连接线13的连接部位(二次连接部位)等。然后,通过烘箱等加热固化透明环氧树脂层14,用透明环氧树脂层14树脂密封电路基板11A的装载面11a和电路基板11A上的连接线13的连接部位等。
此时,把透明环氧树脂层14的厚度做成比各受光元件芯片12的厚度薄,使各受光元件芯片12的受光面12a露出。
其次,如图5所示,滴下(浇注)液状的透明有机硅树脂,用透明有机硅树脂层15覆盖透明环氧树脂层14的上面14a和各受光元件芯片12的受光面12a。然后,通过烘箱等加热固化透明有机硅树脂层15,用透明有机硅树脂层15树脂密封透明环氧树脂层14和各受光元件芯片12的受光面12a。
其次,如图6所示,通过使用刀具21的切割,沿着规定的线切断分割电路基板11A、透明环氧树脂层14及透明有机硅树脂层15,分离成各个受光元件芯片12,从而得到多个由如图1所示的电路基板11、受光元件芯片12、连接线13、透明环氧树脂层14及透明有机硅树脂层15等形成的树脂密封型半导体受光元件1。
在这里,将切割片贴在电路基板11A背面,从密封树脂侧进行切割,相反,也可以将切割片贴在密封树脂上面,从电路基板11A侧进行切割。
另外,本发明不仅包括树脂密封型半导体受光元件,而且还包括应用该树脂密封型半导体受光元件的电子设备。作为电子设备有光拾取器等。
本发明在不脱离其精神或主要的特征的情况下,可以用其他的各种形式实施。因此,上述的实施方式在任何方面只不过是简单的例示,不能进行限定性的解释。本发明的范围根据技术方案范围所述,不受说明书文本任何约束。并且,属于技术方案范围的同等范围的变形或变更所有都包含在本发明范围内。
本申请根据于2007年2月2日在日本申请的特愿2007-024693请求优先权。因此,其全部的内容都记入本申请。
Claims (3)
1.一种树脂密封型半导体受光元件,其用透明树脂密封被装载在电路基板上的受光元件,其特征在于,
以使所述受光元件的受光面露出的方式,用透明环氧树脂密封所述电路基板的装载有该受光元件的装载面,至少将该受光元件的受光面用透明有机硅树脂密封。
2.一种树脂密封型半导体受光元件的制造方法,其特征在于,包括:
在电路基板上装载多个受光元件的工序;
分别将各所述受光元件与所述电路基板电连接的工序;
以使各所述受光元件的受光面露出的方式,用透明环氧树脂密封所述电路基板的装载有该各受光元件的装载面的工序;
用透明有机硅树脂密封各所述受光元件的受光面及所述透明环氧树脂上面的工序;以及
通过切割而切断所述电路基板、所述透明环氧树脂及所述透明有机硅树脂,分离该电路基板上的各所述受光元件的工序。
3.一种电子设备,其使用权利要求1所述的树脂密封型半导体受光元件。
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JP2007024693A JP2008192769A (ja) | 2007-02-02 | 2007-02-02 | 樹脂封止型半導体受光素子、樹脂封止型半導体受光素子の製造方法、及び樹脂封止型半導体受光素子を用いた電子機器 |
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Family Cites Families (3)
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US6518600B1 (en) * | 2000-11-17 | 2003-02-11 | General Electric Company | Dual encapsulation for an LED |
US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
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