CN101214918B - 用于微机电封盖制程的封装结构 - Google Patents

用于微机电封盖制程的封装结构 Download PDF

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CN101214918B
CN101214918B CN200710181701XA CN200710181701A CN101214918B CN 101214918 B CN101214918 B CN 101214918B CN 200710181701X A CN200710181701X A CN 200710181701XA CN 200710181701 A CN200710181701 A CN 200710181701A CN 101214918 B CN101214918 B CN 101214918B
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electromechanical
micro
substrate
lid
capping process
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CN101214918A (zh
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田炯岳
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Lingsheng Precision Industries Co Ltd
Lingsen Precision Industries Ltd
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Lingsheng Precision Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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Abstract

本发明一种用于微机电封盖制程的封装结构，包含有一基板、一盖体以及一导电粘胶；其中，基板具有一导接区，导接区是进行接地；盖体是可盖合于基板；导电粘胶是由非金属导电材质所制成，且电阻系数小于102Ω-m(ohm-meter)，导电粘胶涂布于导接区且位于盖体以及基板之间。

Description

用于微机电封盖制程的封装结构
技术领域
本发明是与微机电组件封盖制程(cap package)有关，特别是关于一种用于微机电封盖制程的封装结构。
背景技术
现有微机电封盖制程的封装结构会使用到一种导电粘胶，此导电粘胶是以金属导电物质，例如：金粉、铂粉、银粉、镍粉、铜粉、铝粉或镀银微粒填充于树脂材料中，以形成导电性。
在进行封盖制程(cap package)时，导电粘胶是涂布于基板表面，以供将盖体固设于基板；同时，导电粘胶具有导电的作用，可因应使用者需要并配合特定的线路，产生特定的效果；例如：形成解耦电容(decoupling capacitor)以隔绝交流噪声或射频噪声(RadioFrequency noise；RF noise)，亦或对该盖体进行接地以隔绝电磁干扰(Electro-magnetic Interference；EMI)。然而，现有导电胶多选用金粉、铂粉或银粉，大多属于贵金属，价格较为昂贵，具有生产成本上较高的缺点。
综上所陈，现有用于微机电封盖制程的封装结构，具有上述的缺失而有待改进。
发明内容
本发明的主要目的在于提供一种用于微机电封盖制程的封装结构，具有降低生产成本的特色。
为达成上述目的，本发明所提供一种用于微机电封盖制程的封装结构，包含有一基板、一盖体以及一导电粘胶；其中，该基板是具有一导接区，该导接区是进行接地；该盖体是可盖合于该基板；该导电粘胶是由非金属导电材质所制成，且电阻系数小于102Ω-m(ohm-meter)，该导电粘胶涂布于该导接区且位于该盖体以及该基板之间。
通过此，本发明相较于现有技术，其是以非金属材质制作导电胶，能够达到现有导电胶既有的效果，且非金属材质价格较贵金属材质廉价，具有降低生产成本的特色。
为了详细说明本发明的结构、特征及功效所在，兹举以下较佳实施例并配合图式说明如后，其中：
附图说明
图1为本发明一较佳实施例的结构示意图；
图2为图1的局部放大图，其揭示导电粘胶位置。
【主要组件符号说明】
封装结构10       导接区22
基板20           芯片30
盖体40           穿孔42
导电粘胶50
具体实施方式
首先请参阅图1及图2，其为本发明一较佳实施例所提供的用于微机电封盖制程的封装结构10，包含有一基板20、一芯片30、一盖体40以及一导电粘胶50。
该基板20具有一导接区22，该导接区22是进行接地且涂布有该导电粘胶50。
该芯片30设于该基板20，且电性连接该基板20；
该盖体40为金属材质所制成，该盖体40可盖合于该基板20且具有一穿孔42，该穿孔42对应该芯片30；该导电粘胶50位于该盖体40以及该基板20之间。
该导电粘胶50是由非金属导电材质所制成，非金属导电材质是可为环氧聚化合物(Epoxy)掺杂碳(Carbon)所制成，或者以导电高分子(Conducting Polymers)材料所制成，该导电高分子(Conducting Polymers)材料选自聚乙炔(Polyacetylene)、聚吡咯(Polypyrrole；PPy)、聚赛吩(Polythiophene；PT)、聚苯胺(Polyaniline；PANi)、聚苯(Polyp-phenylene；PPP)以及(Polyphenylene vinylene；PPV)所构成的族群中所选出的一种材质所制成者。本实施例所述的非金属导电材质是选以环氧聚化合物(Epoxy)掺杂碳(Carbon)所制成为例，该导电粘胶50的电阻系数小于102Ω-m(ohm-meter)。
经由上述结构，本实施例所提供用于微机电封盖制程的封装结构10透过环氧聚化合物(Epoxy)的特性将该盖体40固设于该基板20；同时，并透过碳(Carbon)元素可导电的特性，使该基板20电性连接该盖体40，而对该盖体40进行接地。如此一来，该盖体40可隔离来自外界的电磁干扰(Electro-magnetic Interference；EMI)。
通过此，经由以上所提供的实施例可知，本发明的用于微机电封盖制程的封装结构运用非金属材质制作，能够达到现有导电胶既有的效果，且非金属材质价格较贵金属材质廉价，具有降低生产成本的特色。
综上所陈，本发明于前揭实施例中所揭露的构成组件，仅为举例说明，并非用来限制本案的范围，其它等效组件的替代或变化，亦应为本案的申请专利范围所涵盖。

Claims (4)

1.一种用于微机电封盖制程的封装结构，其特征在于包含有：
一基板，具有一导接区，该导接区是进行接地；
一芯片，设于该基板；
一盖体，可盖合于该基板，该盖体具有一穿孔，该穿孔对应该芯片；以及
一导电粘胶，由非金属导电材质所制成，且电阻系数小于102Ω-m，该导电粘胶涂布于该导接区且位于该盖体以及该基板之间。
2.依据权利要求1所述用于微机电封盖制程的封装结构，其特征在于，所述的非金属导电材质为环氧聚化合物掺杂碳所制成。
3.依据权利要求1所述用于微机电封盖制程的封装结构，其特征在于，所述的非金属导电材质为导电高分子材料，该导电高分子材料选自聚乙炔、聚吡咯、聚赛吩、聚苯胺、聚苯以及聚对苯乙烯所构成的族群中所选出的一种材质所制成。
4.依据权利要求1所述用于微机电封盖制程的封装结构，其特征在于，该盖体为金属材质所制成。
CN200710181701XA 2007-01-04 2007-10-24 用于微机电封盖制程的封装结构 Active CN101214918B (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317107A (en) * 1992-09-24 1994-05-31 Motorola, Inc. Shielded stripline configuration semiconductor device and method for making the same
CN1548494A (zh) * 2003-05-06 2004-11-24 千如电机工业股份有限公司 防止电磁干扰的环氧树脂胶体及防止电磁干扰的电感组件
CN1585597A (zh) * 2003-07-30 2005-02-23 索尼株式会社 电子装置
CN1890801A (zh) * 2003-12-05 2007-01-03 松下电器产业株式会社 封装的电子元件、及电子元件封装的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317107A (en) * 1992-09-24 1994-05-31 Motorola, Inc. Shielded stripline configuration semiconductor device and method for making the same
CN1548494A (zh) * 2003-05-06 2004-11-24 千如电机工业股份有限公司 防止电磁干扰的环氧树脂胶体及防止电磁干扰的电感组件
CN1585597A (zh) * 2003-07-30 2005-02-23 索尼株式会社 电子装置
CN1890801A (zh) * 2003-12-05 2007-01-03 松下电器产业株式会社 封装的电子元件、及电子元件封装的制造方法

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