CN101214918B - Packaging structure used for micro-electromechanical capping process - Google Patents
Packaging structure used for micro-electromechanical capping process Download PDFInfo
- Publication number
- CN101214918B CN101214918B CN200710181701XA CN200710181701A CN101214918B CN 101214918 B CN101214918 B CN 101214918B CN 200710181701X A CN200710181701X A CN 200710181701XA CN 200710181701 A CN200710181701 A CN 200710181701A CN 101214918 B CN101214918 B CN 101214918B
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- China
- Prior art keywords
- electromechanical
- micro
- substrate
- lid
- capping process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Abstract
The invention relates to a package structure for manufacturing the procedure of a micro electro-mechanical seal cover, which includes a base plate, a cover and a conductive viscose, wherein, the base plate is provided with a conductive connection zone which is earthed; the cover can be snapped down on the base plate; the conductive viscose is made of non-metal conductive material, and the resistance coefficient is less than 102 omega-m (ohm-meter); the conductive viscose is applied on the conductive connection zone and is arranged between the cover and the base plate.
Description
Technical field
The present invention is relevant with electric component of microcomputer capping process (cap package), particularly about a kind of encapsulating structure that is used for micro-electromechanical capping process.
Background technology
The encapsulating structure of existing micro-electromechanical capping process can use a kind of conductive viscose, and this conductive viscose is with the metallic conduction material, for example: bronze, platinum powder, silver powder, nickel powder, copper powder, aluminium powder or silver-plated particulate are filled in the resin material, to form electric conductivity.
When carrying out capping process (cap package), conductive viscose is to coat substrate surface, for lid is fixedly arranged on substrate; Simultaneously, conductive viscose has the effect of conduction, can need and cooperate specific circuit in response to the user, produces specific effect; For example: form decoupling capacitance (decoupling capacitor) with isolated AC noise or radio noise (Radio Frequency noise; RF noise), also or to this lid carry out ground connection with isolated electromagnetic interference (Electro-magnetic Interference; EMI).Yet existing conducting resinl multiselect belongs to noble metal mostly with bronze, platinum powder or silver powder, and price is comparatively expensive, has shortcoming higher on the production cost.
To sum up institute is old, and the existing encapsulating structure that is used for micro-electromechanical capping process has above-mentioned disappearance and haves much room for improvement.
Summary of the invention
Main purpose of the present invention is to provide a kind of encapsulating structure that is used for micro-electromechanical capping process, has the characteristic that reduces production costs.
For reaching above-mentioned purpose, a kind of encapsulating structure that is used for micro-electromechanical capping process provided by the present invention includes a substrate, a lid and a conductive viscose; Wherein, this substrate is to have one to connect the district, and this connects the district is to carry out ground connection; This lid is to be covered on this substrate; This conductive viscose is made by nonmetal conductive material, and resistance coefficient is less than 10
2Ω-m (ohm-meter), this conductive viscose coat this connect the district and between this lid and this substrate.
Through this, the present invention is compared to prior art, and it is to make conducting resinl with non-metallic material, can reach the existing existing effect of conducting resinl, and the non-metallic material price is cheap than the noble metal material, has the characteristic that reduces production costs.
In order to specify structure of the present invention, characteristic and effect place, lift following preferred embodiment now and cooperate graphic explanation as after, wherein:
Description of drawings
Fig. 1 is the structural representation of the present invention's one preferred embodiment;
Fig. 2 is the partial enlarged drawing of Fig. 1, and it discloses the conductive viscose position.
[primary clustering symbol description]
Encapsulating structure 10 connects district 22
The specific embodiment
At first see also Fig. 1 and Fig. 2, the encapsulating structure that is used for micro-electromechanical capping process 10 that it is provided for the present invention's one preferred embodiment includes a substrate 20, a chip 30, a lid 40 and a conductive viscose 50.
This substrate 20 has one and connects district 22, and this connects district 22 is to carry out ground connection and be coated with this conductive viscose 50.
This chip 30 is located at this substrate 20, and electrically connects this substrate 20;
This lid 40 is that metal material is made, and this lid 40 can be covered on this substrate 20 and have a perforation 42, and this 42 pairs of perforation should chip 30; This conductive viscose 50 is between this lid 40 and this substrate 20.
This conductive viscose 50 is made by nonmetal conductive material; Nonmetal conductive material is that to can be epoxy polyacetylene compound (Epoxy) doping carbon (Carbon) made; Perhaps made with conducting polymer (Conducting Polymers) material, this conducting polymer (Conducting Polymers) material is selected from polyacetylene (Polyacetylene), polypyrrole (Polypyrrole; PPy), gather match fen (Polythiophene; PT), polyaniline (Polyaniline; PANi), polyphenyl (Polyp-phenylene; PPP) and (Polyphenylene vinylene; PPV) the made person of a kind of material who is selected in the group that is constituted.The described nonmetal conductive material of present embodiment is to select with the made example that becomes of epoxy polyacetylene compound (Epoxy) doping carbon (Carbon), and the resistance coefficient of this conductive viscose 50 is less than 10
2Ω-m (ohm-meter).
Via said structure, the characteristic that the encapsulating structure 10 of micro-electromechanical capping process that present embodiment is provided for sees through epoxy polyacetylene compound (Epoxy) is fixedly arranged on this substrate 20 with this lid 40; Simultaneously, and see through the conductive characteristic of carbon (Carbon) element, make this substrate 20 electrically connect this lid 40, and this lid 40 is carried out ground connection.Thus, this lid 40 can be isolated electromagnetic interference (the Electro-magnetic Interference that comes from the outside; EMI).
Through this; Can know that via the above embodiment that provides the encapsulating structure utilization non-metallic material that is used for micro-electromechanical capping process of the present invention is made, and can reach the existing existing effect of conducting resinl; And the non-metallic material price is cheap than the noble metal material, has the characteristic that reduces production costs.
To sum up institute is old, and the present invention is in the constituent components of preceding taking off among the embodiment to be disclosed, be merely to illustrate, and be not the scope that is used for limiting this case, the substituting or change of other equivalent elements, the claim that also should be this case contains.
Claims (4)
1. encapsulating structure that is used for micro-electromechanical capping process is characterized in that including:
One substrate has one and connects the district, and this connects the district is to carry out ground connection;
One chip is located at this substrate;
One lid can be covered on this substrate, and this lid has a perforation, and this perforation is to should chip; And
One conductive viscose, made by nonmetal conductive material, and resistance coefficient is less than 10
2Ω-m, this conductive viscose coat this connect the district and between this lid and this substrate.
2. according to the said encapsulating structure that is used for micro-electromechanical capping process of claim 1, it is characterized in that described nonmetal conductive material is that epoxy polyacetylene compound doping carbon is made.
3. according to the said encapsulating structure that is used for micro-electromechanical capping process of claim 1; It is characterized in that; Described nonmetal conductive material is a conducting polymer composite, and this conducting polymer composite is selected from polyacetylene, polypyrrole, it is made to gather match fen, polyaniline, polyphenyl and gather a kind of material of being selected in the group that styrene is constituted.
4. according to the said encapsulating structure that is used for micro-electromechanical capping process of claim 1, it is characterized in that this lid is that metal material is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710181701XA CN101214918B (en) | 2007-01-04 | 2007-10-24 | Packaging structure used for micro-electromechanical capping process |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200720000215.9 | 2007-01-04 | ||
| CN200720000215 | 2007-01-04 | ||
| CN200710181701XA CN101214918B (en) | 2007-01-04 | 2007-10-24 | Packaging structure used for micro-electromechanical capping process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101214918A CN101214918A (en) | 2008-07-09 |
| CN101214918B true CN101214918B (en) | 2012-04-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710181701XA Active CN101214918B (en) | 2007-01-04 | 2007-10-24 | Packaging structure used for micro-electromechanical capping process |
Country Status (1)
| Country | Link |
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| CN (1) | CN101214918B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6552450B2 (en) * | 2016-04-19 | 2019-07-31 | 三菱電機株式会社 | Semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5317107A (en) * | 1992-09-24 | 1994-05-31 | Motorola, Inc. | Shielded stripline configuration semiconductor device and method for making the same |
| CN1548494A (en) * | 2003-05-06 | 2004-11-24 | 千如电机工业股份有限公司 | Epoxy resin and inductor assembly for preventing electromagnetic interference |
| CN1585597A (en) * | 2003-07-30 | 2005-02-23 | 索尼株式会社 | Electronic device |
| CN1890801A (en) * | 2003-12-05 | 2007-01-03 | 松下电器产业株式会社 | Packaged electronic element and method of producing electronic element package |
-
2007
- 2007-10-24 CN CN200710181701XA patent/CN101214918B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5317107A (en) * | 1992-09-24 | 1994-05-31 | Motorola, Inc. | Shielded stripline configuration semiconductor device and method for making the same |
| CN1548494A (en) * | 2003-05-06 | 2004-11-24 | 千如电机工业股份有限公司 | Epoxy resin and inductor assembly for preventing electromagnetic interference |
| CN1585597A (en) * | 2003-07-30 | 2005-02-23 | 索尼株式会社 | Electronic device |
| CN1890801A (en) * | 2003-12-05 | 2007-01-03 | 松下电器产业株式会社 | Packaged electronic element and method of producing electronic element package |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101214918A (en) | 2008-07-09 |
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