CN203367022U - Chip-type solid electrolytic tantalum capacitor - Google Patents
Chip-type solid electrolytic tantalum capacitor Download PDFInfo
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- CN203367022U CN203367022U CN 201320481382 CN201320481382U CN203367022U CN 203367022 U CN203367022 U CN 203367022U CN 201320481382 CN201320481382 CN 201320481382 CN 201320481382 U CN201320481382 U CN 201320481382U CN 203367022 U CN203367022 U CN 203367022U
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Abstract
The utility model discloses a chip-type solid electrolytic tantalum capacitor which includes an anode tantalum core, a dielectric layer, a cathode, an anode tantalum wire led out from the anode tantalum core, an anode pin frame, and a cathode pin frame. The anode pin frame is connected with the anode tantalum wire; the cathode pin frame comprises a cathode support piece; the cathode support piece is connected with the cathode by bonding silver paste; and the cathode support plate is provided with a groove. The chip-type solid electrolytic tantalum capacitor can increase the bonding strength between the anode tantalum core and the cathode pin frame; the friction force between the bonding silver paste and the cathode pin frame is increased, so that the bonding strength between the bonding silver paste and the cathode support piece is increased and the contact resistance within the product also can be reduced; the ESR value and the loss angle tangent value of the product are reduced; the vibration resistance ability of the product when welded onto the circuit board is improved; and especially the reliability of the military product is improved. The application of the tantalum capacitor in the electronic industry can be extended, and the market is expanded.
Description
technical field
The utility model relates to the tantalum capacitor field, particularly a kind of chip-type solid electrolyte Ta capacitor.
Background technology
Solid tantalum capacitor is by U.S. Bell Lab, at first to be succeeded in developing in 1956.Its excellent performance, be that in all capacitors, volume is little and can reach the product than high capacitance, and the tantalum capacitor profile is varied, and easily manufacture and be applicable to surface-pasted small-sized and sheet type element.At present just as is known to the person skilled in the art, in various subnormal voltage operation circuit, use widely the chip-type solid electrolyte Ta capacitor, to adapt to the needs of current electronic technology automation and miniaturization development.
The current miniaturization along with sheet type tantalum electrolyte capacitor, reduced the package dimension of solid tantalum electrolytic capacitor, but be arranged in size circlet epoxy resins mold pressing packaging body, require tantalum anode fuse size also more and more less, cause like this cathode end area of sheet type tantalum electrolyte capacitor also more and more less, its exit intensity also weakens, and the ESR value of product can increase simultaneously.
In prior art, the invention that application number is 201210105873.X relates to a kind of lead frame of chip region band groove, by a plurality of horizontal Tiles, several frame units being set forms, frame unit comprises radiating area, chip region and pin area, the chip region top connects radiating area, being provided with surface in chip region is the chip positioning district of electroplated metal layer, and below, chip positioning district connects pin area, is provided with a circle closed pockets identical with contained chip outline in described chip positioning district.The disclosure of the invention that application number is 200710151754.7 a kind of tantalum capacitor, comprising: capacitor body comprises tantalum powder and has surface is installed; Cathode lead frame, capacitor body is arranged on cathode lead frame; Tantalum wire, have the Embedded Division that is positioned at capacitor body and be positioned at the outer non-embedded section of capacitor body; Anode lead frame, be connected to the non-embedded section of tantalum wire; And resin mold, around capacitor body and tantalum wire, wherein, the Embedded Division of tantalum wire has at least one bending.Above prior art, all less than solving the technical problem that how to increase the bond strength between anode tantalum core and negative pole nead frame.
The utility model content
Technical problem to be solved in the utility model is, a kind of chip-type solid electrolyte Ta capacitor is provided, it can increase the bond strength between anode tantalum core and negative pole nead frame, make the combination between capacitor internal cathode portion and leading-out terminal tightr, improve the reliability of Product jointing to vibration resistance, particularly military use product on wiring board.
The technical solution of the utility model is: described chip-type solid electrolyte Ta capacitor, comprise anode tantalum core, dielectric layer, negative electrode, the anode tantalum wire of drawing, anodal nead frame, negative pole nead frame from anode tantalum core, described anodal nead frame is connected with the anode tantalum wire, described negative pole nead frame comprises the negative pole supporting spring, described negative pole supporting spring is connected with negative electrode by bonding silver paste, and described negative pole supporting spring is provided with groove.
The area of the groove part of described negative pole supporting spring accounts for 1 ~ 80% of whole negative pole supporting spring area.
The depth requirements of the groove of described negative pole supporting spring is at 0.001 ~ 0.1mm.
The position that the negative pole supporting spring is installed on described anode tantalum wicking surface also is provided with groove, and this groove area is equivalent to 1 ~ 80% of whole negative pole supporting spring area.The area of the groove of negative pole supporting spring and position are consistent with area and the position of the groove of anode tantalum wicking surface.
The utility model can increase the bond strength between anode tantalum core and negative pole nead frame, design groove on the negative pole supporting spring of negative pole nead frame, guaranteed more and more undersized anode tantalum core design, still enough adhesive strengths can be arranged, thisly with reeded negative pole supporting spring, can make frictional force between bonding silver paste and negative pole nead frame increase, thereby increase the adhesive strength between bonding silver paste and negative pole supporting spring, guarantee the intensity of product negative pole leading-out terminal, make the combination between capacitor internal cathode portion and leading-out terminal tightr, can reduce the contact resistance of interiors of products simultaneously, reduce ESR value and the loss tangent of product, improve Product jointing to the vibration resistance on wiring board, the reliability of military use product particularly.Can expand the application of tantalum capacitor in electron trade, open up market.
Adopt more respectively the utility model nead frame and the same a collection of chip-type solid electrolyte Ta capacitor that adopts existing nead frame (concrete specification is 6.3V100 μ F, is of a size of 3.5 * 2.8 * 1.9 mm).These two kinds of chip-type solid electrolyte Ta capacitors have been carried out to the test of some technical parameters, and concrete property value reduced parameter sees the following form.
| ? | Average bonding strength between anode tantalum core and negative pole nead frame | Average loss angle tangent value (tg δ) | Average equivalent series resistance (ESR) |
| The nead frame of prior art | 100g | 6.1% | 1.21Ω |
| Nead frame of the present utility model | 125g | 5.5% | 1.03Ω |
Pass through Data Comparison, clearly, adopt leadframe structure of the present utility model can effectively improve the bond strength (approximately having improved 25%) between anode tantalum core and negative pole nead frame, thereby reduced the contact resistance of capacitor internal, and then make loss tangent and equivalent series resistance obviously reduce (loss tangent has descended approximately 10%, and equivalent series resistance ESR has descended approximately 15%).
The accompanying drawing explanation
Fig. 1 is the cutaway view of the utility model chip-type solid electrolyte Ta capacitor;
Fig. 2 is the vertical view of establishing reeded negative pole supporting spring in the utility model.
Embodiment
As depicted in figs. 1 and 2, described chip-type solid electrolyte Ta capacitor, comprise anode tantalum core 3, dielectric layer, negative electrode, anode tantalum wire 4, anodal nead frame 5, negative pole nead frame and be encapsulated in the outside epoxy resin, described anodal nead frame 5 is connected with the mode of anode tantalum wire 4 by welding, described negative pole nead frame comprises negative pole supporting spring 1, the negative pole supporting spring 1 of described negative pole nead frame is connected with negative electrode by bonding silver paste 2, and described negative pole supporting spring 1 is provided with groove.
The area of the groove part of negative pole supporting spring 1 accounts for 1 ~ 80% of whole negative pole supporting spring area.
The depth requirements of the groove of negative pole supporting spring 1 is at 0.001 ~ 0.1mm.
In chip-type solid electrolyte Ta capacitor of the present utility model, use the tantalum powder to be pressed into square anode tantalum core, anode exit anode tantalum wire is embedded in anode tantalum core central authorities, after oversintering, makes anode tantalum core and anode tantalum wire be fused together the positive pole as capacitor.The oxide-film of one deck densification is manufactured as the insulation dielectric layer by electrochemical mode in centre.Negative electrode generates one deck conducting metal oxide as negative electrode by a kind of solution of dipping after repeatedly decomposing.Negative electrode is connected with the negative pole supporting spring of negative pole nead frame by bonding silver paste, and the anode tantalum wire is connected with anodal nead frame by the mode of welding.
In the utility model, can form the negative pole supporting spring with certain depth groove by the mode of bending, also can adopt cutting mode to form the negative pole supporting spring with certain depth groove.The position of installing at the negative pole of anode tantalum wicking surface also is provided with groove, and the area of its groove part is equivalent to 1 ~ 80% of whole negative pole supporting spring area.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all being included in protection range of the present utility model.
Claims (5)
1. a chip-type solid electrolyte Ta capacitor, comprise anode tantalum core (3), dielectric layer, negative electrode, the anode tantalum wire (4) of drawing, anodal nead frame (5), negative pole nead frame from anode tantalum core (3), described anodal nead frame (5) is connected with anode tantalum wire (4), described negative pole nead frame comprises negative pole supporting spring (1), described negative pole supporting spring (1) is connected with negative electrode by bonding silver paste (2), and it is characterized in that: described negative pole supporting spring (1) is provided with groove.
2. chip-type solid electrolyte Ta capacitor according to claim 1, it is characterized in that: the area of the groove part of described negative pole supporting spring (1) accounts for 1 ~ 80% of whole negative pole supporting spring (1) area.
3. chip-type solid electrolyte Ta capacitor according to claim 1, it is characterized in that: the degree of depth of the groove of described negative pole supporting spring (1) is 0.001 ~ 0.1mm.
4. chip-type solid electrolyte Ta capacitor according to claim 1, it is characterized in that: the position that negative pole supporting spring (1) is installed on described anode tantalum core (3) surface also is provided with groove, and this groove area is equivalent to 1 ~ 80% of whole negative pole supporting spring (1) area.
5. chip-type solid electrolyte Ta capacitor according to claim 1 is characterized in that: the area of the groove of described negative pole supporting spring (1) and position are consistent with area and the position of the groove on anode tantalum core (3) surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320481382 CN203367022U (en) | 2013-08-08 | 2013-08-08 | Chip-type solid electrolytic tantalum capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320481382 CN203367022U (en) | 2013-08-08 | 2013-08-08 | Chip-type solid electrolytic tantalum capacitor |
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| Publication Number | Publication Date |
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| CN203367022U true CN203367022U (en) | 2013-12-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201320481382 Expired - Lifetime CN203367022U (en) | 2013-08-08 | 2013-08-08 | Chip-type solid electrolytic tantalum capacitor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047414A (en) * | 2015-08-11 | 2015-11-11 | 湖南艾华集团股份有限公司 | Method for producing chip aluminum electrolytic capacitor |
| CN105047440A (en) * | 2015-08-11 | 2015-11-11 | 湖南艾华集团股份有限公司 | Terminal pin flattening device for chip aluminum electrolytic capacitor and production method of capacitor |
| CN106158383A (en) * | 2015-04-01 | 2016-11-23 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of preparation method of the anode tantalum block reducing tantalum capacitor loss tangent |
| CN109300689A (en) * | 2018-11-02 | 2019-02-01 | 北京元六鸿远电子科技股份有限公司 | Molding Surface Mount ceramic capacitor and preparation method with non-slip groove |
| CN113327771A (en) * | 2021-05-11 | 2021-08-31 | 东莞顺络电子有限公司 | Chip conductive polymer capacitor packaging method and capacitor |
-
2013
- 2013-08-08 CN CN 201320481382 patent/CN203367022U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158383A (en) * | 2015-04-01 | 2016-11-23 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of preparation method of the anode tantalum block reducing tantalum capacitor loss tangent |
| CN105047414A (en) * | 2015-08-11 | 2015-11-11 | 湖南艾华集团股份有限公司 | Method for producing chip aluminum electrolytic capacitor |
| CN105047440A (en) * | 2015-08-11 | 2015-11-11 | 湖南艾华集团股份有限公司 | Terminal pin flattening device for chip aluminum electrolytic capacitor and production method of capacitor |
| CN109300689A (en) * | 2018-11-02 | 2019-02-01 | 北京元六鸿远电子科技股份有限公司 | Molding Surface Mount ceramic capacitor and preparation method with non-slip groove |
| CN109300689B (en) * | 2018-11-02 | 2024-05-10 | 北京元六鸿远电子科技股份有限公司 | Molded surface-mounted ceramic dielectric capacitor with anti-skid groove and preparation method thereof |
| CN113327771A (en) * | 2021-05-11 | 2021-08-31 | 东莞顺络电子有限公司 | Chip conductive polymer capacitor packaging method and capacitor |
| CN113327771B (en) * | 2021-05-11 | 2022-08-23 | 东莞顺络电子有限公司 | Chip conductive polymer capacitor packaging method and capacitor |
| US11587739B2 (en) | 2021-05-11 | 2023-02-21 | Dongguan Sunlord Electronics Co., Ltd. | Chip-style conductive polymer capacitor |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 412011 Zhuzhou, Jiangsu Province, South China Road, East District, No. 1297 Patentee after: ZHUZHOU HONGDA ELECTRONICS Corp.,Ltd. Address before: 412011 Zhuzhou, Jiangsu Province, South China Road, East District, No. 1297 Patentee before: ZHUZHOU HONGDA ELECTRONICS Co.,Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20131225 |
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| CX01 | Expiry of patent term |