CN203851292U - MEMS microphone - Google Patents
MEMS microphone Download PDFInfo
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- CN203851292U CN203851292U CN201420176222.4U CN201420176222U CN203851292U CN 203851292 U CN203851292 U CN 203851292U CN 201420176222 U CN201420176222 U CN 201420176222U CN 203851292 U CN203851292 U CN 203851292U
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- wiring board
- filter capacitor
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- 239000003990 capacitor Substances 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 238000001465 metallisation Methods 0.000 claims description 38
- 238000009413 insulation Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000001914 filtration Methods 0.000 abstract 5
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
An MEMS microphone comprises a packaging structure formed by a housing and a circuit board. An ASIC chip and an MEMS acoustics chip are disposed in the packaging structure, and the ASIC chip also comprises a bias voltage terminal, an input terminal, an output terminal, a power supply terminal and a grounding terminal; one electrode of the MEMS acoustics chip is electrically connected with the input terminal of the ASIC chip, the other electrode of the MEMS acoustics chip is electrically connected with the bias voltage terminal of the ASIC chip, a first filtering capacitor is connected between the power supply terminal and the grounding terminal of the ASIC chip, a second filtering capacitor is connected between the output terminal and the grounding terminal of the ASIC chip, and capacitance values of the capacitors are both 25PF-90PF; and the first filtering capacitor and the second filtering capacitor are formed by laminating two metal layers buried inside the circuit board, and an interlayer distance between the two metal layers is 5[mu]m-20[mu]m. PSR performance and anti-RF performance of the MEMS microphone can be largely improved especially aiming at frequency ranges such as GSM850MHZ, 900MHZ, 1800MHZ and 1900MHZ and the like; and the MEMS microphone is simple in structure and facilitates miniaturization of product design, the thickness of the circuit board is designed with the 5[mu]m-20[mu]m interlayer distance, and capacitance value requirements of the filtering capacitors can be satisfied.
Description
Technical field
The utility model relates to a kind of microphone, relates in particular to a kind of MEMS microphone.
Background technology
In recent years, utilizing MEMS(MEMS (micro electro mechanical system)) the integrated MEMS microphone of technique starts to be applied in batches in the electronic products such as mobile phone, notebook, and the high-temperature resistant result of this microphone is good, can withstand the high temperature test of SMT technique.The general structure of this product is exactly to utilize a wiring board and shell to form a cavity and the encapsulation that becomes MEMS microphone, on the outer surface of wiring board, pad can be set, for fixing MEMS microphone and be electrically connected to external circuit, MEMS acoustics chip and ASIC(Application Specific Integrated Circuit are installed in the inside of cavity) chip, asic chip at least comprises bigoted voltage end, input, output, power end and earth terminal, an electrode of MEMS acoustics chip is electrically connected to the input of asic chip, another electrode is electrically connected to the bigoted voltage end of asic chip, in the encapsulation of MEMS microphone, be provided with permeate chamber inside and outside and for receiving the sound hole of external sound signal.For example patent documentation 1 discloses a kind of structure of this series products.
Patent documentation 1 discloses a kind of MEMS microphone, its structure as shown in Figure 1, the circular groove shape metal shell 110 of MEMS microphone and square wiring board 120 are combined together to form the encapsulating structure of MEMS microphone, and MEMS acoustics chip 10 and asic chip 20 are installed on wiring board 120.The circuit structure of this MEMS microphone as shown in Figure 2, an electrode of MEMS acoustics chip 10 is electrically connected to the input Vin of asic chip 20, another electrode connects the bigoted voltage end Bias of asic chip 20, and GND, Vout and Vdd are respectively earth terminal, output and the power ends of asic chip 20.
Yet, the anti-electromagnetic interference capability of this MEMS microphone a little less than, for radio frequency bands such as GSM850MHZ, 900MHZ, 1800MHZ and 1900MHZ, do not meet the designing requirement of existing electronic product; Meanwhile, there is certain noise fluctuations in the external voltage signal that power end provides, and PSR (Power Supply Rejection Ratio) is lower, and properties of product are had a significant impact.
Given this, need a kind of anti-electromagnetic interference capability well and the higher MEMS microphone of Power Supply Rejection Ratio, improve the defect that the anti-radio noise of MEMS affects aspect.
Patent documentation 1: Chinese invention patent is announced No. CN1933680.
Utility model content
The utility model proposes in order to address the above problem.
A MEMS microphone, comprises the encapsulating structure that shell and wiring board form, and described encapsulating structure inside is provided with asic chip and MEMS acoustics chip, and described asic chip also comprises bigoted voltage end, input and output, power end, earth terminal; An electrode of described MEMS acoustics chip is electrically connected to the input of described asic chip, another electrode is electrically connected to the bigoted voltage end of described asic chip, and, between the power end of described asic chip and earth terminal, be connected with the first filter capacitor, the capacitance of described the first filter capacitor is 25PF～90PF; Between the output of described asic chip and earth terminal, be connected with the second filter capacitor, the capacitance of described the second filter capacitor is 25PF～90PF; Described the first filter capacitor and described the second filter capacitor are by being embedded in the stacked formation of two metal layers of described wiring board inside, and the interfloor distance of this two metal layers is 5um～20um.
In addition, preferably, the capacitance of described the first filter capacitor and the second filter capacitor differs and is no more than 50%.
In addition, preferably, described wiring board consists of at least three straton wiring boards, and described every sub-wiring board comprises insulating medium layer and be arranged on the metal level of insulating medium layer upper surface, be provided with the metallization via hole that is electrically connected to described metal level in described insulating medium layer; On the described wiring board of encapsulating structure outer surface, be provided with pad, the output of described asic chip, power end and earth terminal are electrically connected on corresponding pad by described metallization via hole.
In addition, preferably, described wiring board is laminated by the first wiring board, the second wiring board and tertiary circuit plate; Described tertiary circuit plate carries described asic chip; Formation the first filter capacitor and the second filter capacitor on described the first wiring board and described the second wiring board, the lower surface of described the first wiring board is provided with described pad.
In addition, preferably, metal level one end on described the first wiring board is electrically connected to earth terminal pad by metallization via hole, the other end is electrically connected to the earth terminal of described asic chip by metallization via hole through the metal level on the second wiring board, and with described the second wiring board on metal level electric insulation; Metal level on described the second wiring board comprises two parts at least insulated from each other, and its one end is electrically connected to output pad and power end pad by metallization via hole correspondence respectively; The other end is electrically connected to respectively output and the power end of described asic chip by metallization via hole correspondence.
In addition, preferably, the metal level one end on described the second wiring board is electrically connected to earth terminal pad by metallization via hole through the metal level on the second wiring board, and with the first wiring board on metal level electric insulation; The other end is electrically connected to the earth terminal of described asic chip by metallization via hole; Metal level on described the first wiring board comprises two parts at least insulated from each other, and its one end is electrically connected to output pad and power end pad by metallization via hole correspondence respectively; The other end is not electrically connected to output and the power end of described asic chip by metallization via hole through the metal level correspondence on the second wiring board, and with the second wiring board on metal level electric insulation.
In addition, preferably, described the first filter capacitor is a capacitor.
In addition, preferably, described the second filter capacitor is a capacitor.
In addition, preferably, described the second filter capacitor is two capacitors that are connected in parallel.
In addition, preferably, described the second filter capacitor is a ∏ type filter circuit.
The utility model is by being connected with the first filter capacitor between the power end at described asic chip and earth terminal, the capacitance of described the first filter capacitor is 25PF～90PF; Between the output of described asic chip and earth terminal, be connected with the second filter capacitor, the capacitance of described the second filter capacitor is 25PF～90PF; Described the first filter capacitor and described the second filter capacitor are by being embedded in the stacked formation of two metal layers of described wiring board inside, and the interfloor distance of this two metal layers is 5um～20um.The first filter capacitor can stop noise fluctuations and the extraneous RF signal of the power supply signal of power end to impact asic chip effectively; The second filter capacitor can stop extraneous RF signal by output, asic chip to be impacted effectively, and select the first electric capacity and second electric capacity of specific capacitance, for special frequency channel such as GSM850MHZ, 900MHZ, 1800MHZ and 1900MHZ, can significantly improve PSR performance and the anti-RF performance of MEMS microphone; Filter capacitor is embedded in to wiring board inside simultaneously, simple in structure, make full use of product structure, be beneficial to product design miniaturization, metal level distance is 5um～20um wiring board Thickness Design, can better reach the requirement of filter capacitor capacitance.
Accompanying drawing explanation
By below in conjunction with accompanying drawing, embodiment being described, above-mentioned feature of the present utility model and technological merit will become apparent and easily understand.
Fig. 1 means the schematic diagram of the concrete structure of MEMS microphone in the past;
Fig. 2 means the circuit diagram in MEMS microphone in the past;
Fig. 3 means the physical circuit schematic diagram of the MEMS microphone that the utility model embodiment mono-relates to;
Fig. 4 means the MEMS microphone circuit structural representation that the utility model embodiment mono-relates to;
Fig. 5 means that the utility model embodiment mono-relates to MEMS microphone the first wiring board surface texture schematic diagram;
Fig. 6 means that the utility model embodiment mono-relates to MEMS microphone the second PCB surface structural representation;
Fig. 7 means that the utility model embodiment bis-relates to MEMS microphone circuit structural representation.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is done to further detailed description.
Embodiment mono-
Fig. 3 represents the circuit diagram of the MEMS microphone that the utility model relates to.As shown in Figure 3, the MEMS microphone that the utility model relates to, comprise a MEMS acoustics chip (being expressed as MEMS in Fig. 3) and an asic chip for amplification signal (Fig. 3 is expressed as ASIC), asic chip comprises bigoted voltage end (being expressed as Bias in Fig. 3), input (being expressed as Vin in Fig. 3), output (being expressed as Vout in Fig. 3), power end (being expressed as Vdd in Fig. 3) and earth terminal (being expressed as GND in Fig. 3), an electrode of MEMS acoustics chip is electrically connected to the input Vin of asic chip, another electrode is electrically connected to the bigoted voltage end Bias of asic chip, and, between the power end Vdd of asic chip and output end vo ut and earth terminal GND, be connected with respectively the first filter capacitor C1 and the second filter capacitor C2.
By this design, when the power supply signal of being inputted by power end produces fluctuation, the the first filter capacitor C1 that is connected to power end and earth terminal will store or release energy according to the fluctuation of power supply signal, thereby the load voltage that makes to input ASIC power end is level and smooth, the noise fluctuations because of external power source signal does not change, thereby reaches the object of anti-electromagnetic interference, raising Power Supply Rejection Ratio.Equally, when existing extraneous radio frequency (RF) signal to exert an influence to the power end of ASIC and output, be connected to power end, output and earth terminal between the first filter capacitor C1, the second filter capacitor C2 corresponding storage of impact that also can produce power end and output according to extraneous radio frequency (RF) signal or release energy, thereby eliminate the impact of RF signal on the power end of ASIC and output.
In the invention process process, the first filter capacitor C1 capacitance scope is 25PF～90PF; The capacitance scope of the second filter capacitor is 25PF～90PF, for special frequency channel such as GSM850MHZ, 900MHZ, 1800MHZ and 1900MHZ, plays better filter action.
In view of the microminiaturized designing requirement of MEMS microphone, in practical application, preferred scheme is: described wiring board interior metal is folded layer by layer to be formed by being embedded in for described the first filter capacitor C1 and described the second filter capacitor C2.As shown in Figure 4, MEMS microphone structure, comprises a square metal shell 1 and a square protection structure that square wiring board 2 forms, and sound hole 11 is set for accepting external sound signal on shell 1; On wiring board 2 upper surfaces of protection inside configuration, an asic chip 3 for amplification signal and a MEMS acoustics chip 4 that voice signal is converted into the signal of telecommunication are installed, two electrodes of MEMS acoustics chip 4 are connected respectively on the upper surface of wiring board 2 by gold thread 41.
Wiring board 2 is by the first wiring board 21, the second wiring board 22 and 23 3 stacked forming of sub-wiring board of tertiary circuit plate, and every sub-wiring board consists of insulating medium layer and the metal level being arranged on insulating medium layer.Tertiary circuit plate 23 is for carrying asic chip 3 and MEMS acoustics chip 4; The lower surface of the first wiring board 21, is provided with a plurality ofly for the pad of MEMS microphone is installed in the PCB surface of MEMS microphone packaging scheme, be respectively output end vo ut, power end Vdd and earth terminal GND; The second wiring board 22 is arranged between the first wiring board 21 and tertiary circuit plate 23.
Wherein, metal level on the second wiring board 22 is divided at least two parts, difference electric connection of power supply end Vdd and output end vo ut, and the first filter capacitor C1 and the second filter capacitor C2 of the formation of the metal level on the first wiring board 21 being electrically connected to earth terminal GND respectively plane-parallel capacitor structure, and the interfloor distance of first circuit board 21 metal levels and the second wiring board 22 metal levels is 5um～20um.
By by the first filter capacitor C1 and the second filter capacitor C2 by being embedded to the mode of wiring board 2, can make full use of the design feature of MEMS microphone self, reduce the space that product design takies, be beneficial to the miniaturization of product design, interfloor distance is set to 5um～20um when taking into account product size simultaneously, can better reach the capacitance requirement of filter capacitor.
Metal level in the present invention in wiring board 2 carries out circuit connection by the mode of metallization via hole is set in insulating medium layer, as shown in Figure 5 and Figure 6, the first wiring board 21 inside are provided with two metallize via hole 213 and metallization via holes 215 that run through the first wiring board 21 two sides, metallization via hole 213 and metallization via hole 215 are respectively by electric insulation between the insulative dielectric material 212 around each metallization via hole and insulative dielectric material 214 and metal level 211, and metallization via hole 213 and metallization via hole 215 are electrically connected to respectively output pad and the power end pad of described MEMS microphone external circuit.Metal level 211 on the first wiring board 21 is electrically connected to earth terminal pad GND by a metallization via hole that is arranged on the first wiring board 21 inside; The other end is electrically connected to the earth terminal Vdd of described asic chip by metallization via hole 224 through the metal level on the second wiring board 22.
The metal level of the second wiring board 22 comprises two parts insulated from each other, comprise metal level 221 and metal level 222, between metal level 221 and metal level 222, pass through insulative dielectric material 223 electric insulations, and respectively by two metallization via holes that are arranged on the second wiring board 22 inside, be electrically connected to two metallization via hole 213 and metallization via holes 215 that are connected to respectively described MEMS microphone output pad and power end pad of the first wiring board.
Metallization via hole 213 on the second wiring board 22 and 215 the other end are electrically connected to respectively output and the power end of described asic chip by metallization via hole correspondence.
Thereby, between two metal levels insulated from each other 221 on the metal level 211 on the first wiring board and the second wiring board and metal level 222, form respectively the capacitor of two parallel-plate structures, form two filter capacitors.This design, simple in structure, be convenient to the realization of MEMS small design simultaneously.
In the present embodiment, form the structure that the first filter capacitor C1 and the second filter capacitor layer C2 be embedded on wiring board 2 and can adopt other execution mode, as: the metal level one end on the second wiring board 22 can be electrically connected to earth terminal pad by metallization via hole through the metal level on the first wiring board 21, and with the first wiring board 21 on metal level electric insulation; The other end is electrically connected to the earth terminal of asic chip 3 by metallization via hole;
Metal level on the first wiring board 21 is designed to two parts insulated from each other, and one section of its metal level is electrically connected to output pad and power end pad by metallization via hole correspondence respectively; The other end is electrically connected to output and the power end of asic chip 3 by metallization via hole through the metal level correspondence on the second wiring board 22, and with the second wiring board 22 on metal level electric insulation.
The sort circuit structure of above-mentioned embodiment only need to just can reach the effect of anti-electromagnetic interference, simplicity of design, with low cost by two electric capacity in parallel in circuit.
Embodiment bis-
Fig. 7 means the physical circuit schematic diagram of the second MEMS microphone that the utility model relates to.As shown in Figure 7, same, an electrode of MEMS acoustics chip is electrically connected to the Vin of asic chip, and another electrode is electrically connected to the Bias of asic chip; The first filter capacitor is the capacitor C1 being connected in parallel between Vdd and GND; And the second filter capacitor is the ∏ type filter circuit construction being connected in parallel between Vout and GND, by capacitor C2, capacitor C3, is formed, and be arranged in parallel a resistance R 1.
In application process, for instance, when the power supply signal of being inputted by power end changes, the capacitor C1 that is connected to power end and earth terminal will store or discharge the energy that increases or reduce with respect to normal power source signal; When existing extraneous radiofrequency signal to exert an influence to the power end of ASIC and output, be connected in parallel on the capacitor C1 between Vdd and GND and be connected in parallel on Vout and GND between the corresponding storage of impact that can produce power end and output according to extraneous radiofrequency signal of ∏ type filter circuit construction or release energy, the load voltage of level and smooth asic chip power end and output, thus the impact of RF signal on the power end of ASIC and output eliminated.
The anti-RF better effects if of circuit structure of this ∏ type filter circuit of Fig. 7, and possess certain anti-static function.
Although above, for the particular circuit configurations of MEMS microphone, several embodiment of the present utility model has been described, as the first filter capacitor C1 and/or the second filter capacitor C2 all adopt the capacitor consisting of a plurality of electric capacity, all do not affect the enforcement of the invention.。
Under above-mentioned instruction of the present utility model; those skilled in the art can carry out various improvement and distortion on the basis of above-described embodiment; and these improvement and distortion; all drop in protection range of the present utility model; those skilled in the art should be understood that; above-mentioned specific descriptions are just better explained the purpose of this utility model, and protection range of the present utility model is limited by claim and equivalent thereof.
Claims (10)
1. a MEMS microphone, comprises the encapsulating structure that shell and wiring board form, and described encapsulating structure inside is provided with asic chip and MEMS acoustics chip, and described asic chip comprises bigoted voltage end, input and output, power end, earth terminal; An electrode of described MEMS acoustics chip is electrically connected to the input of described asic chip, and another electrode is electrically connected to the bigoted voltage end of described asic chip, it is characterized in that,
Between the power end of described asic chip and earth terminal, be connected with the first filter capacitor, the capacitance of described the first filter capacitor is 25PF～90PF;
Between the output of described asic chip and earth terminal, be connected with the second filter capacitor, the capacitance of described the second filter capacitor is 25PF～90PF;
Described the first filter capacitor and described the second filter capacitor are by being embedded in the stacked formation of two metal layers of described wiring board inside, and the interfloor distance of this two metal layers is 5um～20um.
2. MEMS microphone according to claim 1, is characterized in that,
The capacitance of described the first filter capacitor and the second filter capacitor differs and is no more than 50%.
3. MEMS microphone according to claim 2, is characterized in that,
Described wiring board consists of at least three straton wiring boards, and described every sub-wiring board comprises insulating medium layer and be arranged on the metal level of insulating medium layer upper surface, be provided with the metallization via hole that is electrically connected to described metal level in described insulating medium layer;
On the described wiring board of described encapsulating structure outer surface, be provided with pad, the output of described asic chip, power end and earth terminal are electrically connected on corresponding pad by described metallization via hole.
4. MEMS microphone according to claim 3, is characterized in that,
Described wiring board is laminated by the first wiring board, the second wiring board and tertiary circuit plate;
Described tertiary circuit plate carries described asic chip;
On described the first wiring board and described the second wiring board, form the first filter capacitor and the second filter capacitor, the lower surface of described the first wiring board is provided with described pad.
5. MEMS microphone according to claim 4, is characterized in that,
Metal level one end on described the first wiring board is electrically connected to earth terminal pad by metallization via hole;
The other end is electrically connected to the earth terminal of described asic chip by metallization via hole through the metal level on the second wiring board, and with described the second wiring board on metal level electric insulation;
Metal level on described the second wiring board comprises two parts at least insulated from each other, and its one end is electrically connected to output pad and power end pad by metallization via hole correspondence respectively; The other end is electrically connected to respectively output and the power end of described asic chip by metallization via hole correspondence.
6. MEMS microphone according to claim 4, is characterized in that,
Metal level one end on described the second wiring board is electrically connected to earth terminal pad by metallization via hole through the metal level on the second wiring board, and with the first wiring board on metal level electric insulation; The other end is electrically connected to the earth terminal of described asic chip by metallization via hole;
Metal level on described the first wiring board comprises two parts at least insulated from each other, and its one end is electrically connected to output pad and power end pad by metallization via hole correspondence respectively; The other end is not electrically connected to output and the power end of described asic chip by metallization via hole through the metal level correspondence on the second wiring board, and with the second wiring board on metal level electric insulation.
7. according to the MEMS microphone described in the arbitrary claim of claim 1-6, it is characterized in that,
Described the first filter capacitor is a capacitor.
8. according to the MEMS microphone described in the arbitrary claim of claim 1-6, it is characterized in that,
Described the second filter capacitor is a capacitor.
9. according to MEMS microphone claimed in claim 7, it is characterized in that,
Described the second filter capacitor is two capacitors that are connected in parallel.
10. according to MEMS microphone claimed in claim 7, it is characterized in that,
Described the second filter capacitor is a ∏ type filter circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420176222.4U CN203851292U (en) | 2014-04-11 | 2014-04-11 | MEMS microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420176222.4U CN203851292U (en) | 2014-04-11 | 2014-04-11 | MEMS microphone |
Publications (1)
| Publication Number | Publication Date |
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| CN203851292U true CN203851292U (en) | 2014-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420176222.4U Expired - Lifetime CN203851292U (en) | 2014-04-11 | 2014-04-11 | MEMS microphone |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115604637A (en) * | 2022-12-15 | 2023-01-13 | 苏州敏芯微电子技术股份有限公司（Cn） | MEMS microphone and electronic equipment |
| CN116996043A (en) * | 2023-08-18 | 2023-11-03 | 泓林微电子（昆山）有限公司 | MEMS filter structure |
-
2014
- 2014-04-11 CN CN201420176222.4U patent/CN203851292U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115604637A (en) * | 2022-12-15 | 2023-01-13 | 苏州敏芯微电子技术股份有限公司（Cn） | MEMS microphone and electronic equipment |
| CN116996043A (en) * | 2023-08-18 | 2023-11-03 | 泓林微电子（昆山）有限公司 | MEMS filter structure |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200618 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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| CX01 | Expiry of patent term |
Granted publication date: 20140924 |