CN101211984B - 液晶显示装置用薄膜晶体管 - Google Patents

液晶显示装置用薄膜晶体管 Download PDF

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CN101211984B
CN101211984B CN2007103001097A CN200710300109A CN101211984B CN 101211984 B CN101211984 B CN 101211984B CN 2007103001097 A CN2007103001097 A CN 2007103001097A CN 200710300109 A CN200710300109 A CN 200710300109A CN 101211984 B CN101211984 B CN 101211984B
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许宰硕
田雄基
金柄杰
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LG Display Co Ltd
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Abstract

本发明披露了液晶显示装置用薄膜晶体管，所述薄膜晶体管包括形成在基板上的栅极；由具有官能团、金属氧化物、硅和氧的键结构的高介电常数绝缘体形成的栅极绝缘膜；和形成在所述栅极绝缘膜上的源极和漏极。

Description

液晶显示装置用薄膜晶体管
本申请要求在2006年12月28日递交的韩国专利申请第2006-136660号的权利，将其在此以引用的方式整体引入。
技术领域
本发明涉及用于液晶显示(LCD)装置的薄膜晶体管。
背景技术
伴随着近来基于半导体技术的高速发展的各种电子设备中的低电压、低能耗、小型化、薄外形和轻重量的趋势，对用作所述电子设备的显示装置的平板显示装置有大量需求。因此，已开发出各种平板显示装置，例如液晶显示(LCD)装置，等离子显示板(PDP)和有机发光二极管(OLED)。在这些平板显示装置中，由于在小型化、外形和轻重量，以及低能耗和低驱动电压方面的优点，LCD装置最受关注。
所述LCD装置包括对应于透明绝缘基板的上基板，其中包含公共电极、滤色器和黑底(black matrix)；对应于透明绝缘基板的下基板，其中包含切换装置和像素电极；和通过将具有各向异性的介电常数的液晶材料注入所述上下基板之间的空间形成的液晶层。如果将不同的电压施加在所述像素电极和公共电极上，则可控制在所述液晶材料中形成的电场强度，从而使所述液晶层的液晶分子进行取向排列。通过液晶分子的取向排列，通过所述透明绝缘基板的光通量受到控制从而在其上显示所需的图像。
该LCD装置通常形成为薄膜晶体管LCD装置，其作为切换装置用作薄膜晶体管(TFT)。
所述薄膜晶体管由基板、栅极、栅极绝缘膜、源极和漏极以及半导体层构成。
为制造具有良好电气特性如高电荷迁移率等的薄膜晶体管，必须形成高介电常数绝缘材料的栅极绝缘膜。然而，如果形成高介电常数绝缘材料的栅极绝缘膜，薄膜晶体管的漏电流将增加，从而降低了薄膜晶体管的效率。
发明内容
因此本发明涉及LCD装置用薄膜晶体管，所述薄膜晶体管基本上避免了由于现有技术的局限和缺点所带来的一个或多个问题。
本发明的一个目的是提供LCD装置用薄膜晶体管，所述薄膜晶体管配置有具有高介电常数的绝缘材料的栅极绝缘膜，能实现高电荷迁移率并降低漏电流。
一部分本发明的其他优点、目的和特征将在以下描述中列出，并且另一部分本发明的其他优点、目的和特征当本领域技术人员对以下内容进行研究时是显而易见的，或可以由本发明的实践而获知。通过在书面描述及其权利要求以及附图中具体指明的结构，可以实现和获得本发明的目的和其他优点。
为实现这些目的和其他优点，依照此处具体表达和广泛描述的本发明的目的，LCD装置用薄膜晶体管包括形成在基板上的栅极；由具有官能团、金属氧化物、硅和氧的键结构的高介电常数绝缘体形成的栅极绝缘膜；和形成在所述栅极绝缘膜上的源极和漏极。
此时，所述硅和金属氧化物可以分布在六个顶点上，以形成梯型单元结构。并且，所述硅和金属氧化物可以分布在八个顶点上，以形成笼型单元结构。以及，所述硅和金属氧化物可以分布在九个至十八个顶点上，以形成笼型单元结构。
并且，所述高介电常数绝缘体具有金属氧化物(Me)-氧(O)-金属氧化物(Me)单元键结构，或硅(Si)-氧(O)-硅(Si)单元键结构。
所述官能团由有机基团、无机聚合物、有机/无机杂化聚合物、单一有机聚合物或复合有机聚合物中的任一种构成。
所述金属氧化物由钛酸钡锶、钛锆酸钡(barium zirconate titanate)、钛锆酸铅(lead zirconate titanate)、钛酸铅镧、钛酸锶、钛酸钡、氟化钡镁、钛酸铋、钽酸锶铋、铌钽酸锶铋(strontium bismuth tanalate niobate)、Al2O3、MgO、CaO、ZrSiO4、HfSiO4、Y2O3、ZrO2、HfO2、SrO、La2O3、Ta2O5、BaO或TiO2中的任一种形成。
此外，所述薄膜晶体管包括形成在所述栅极绝缘膜和所述源/漏极之间的半导体层。
所述半导体层由硅层形成。
并且，所述半导体层由相应于液晶聚芴嵌段共聚物(LCPBC)、并五苯或聚噻吩中的任一种的有机半导体层形成。
应当理解本发明的以上概述和以下详细描述是示例性和解释性的，并旨在对所要求保护的本发明提供更多说明。
附图说明
附图包括在本文中以提供对本发明的进一步理解并将其引入以构成本申请的一部分，所述附图描述了本发明的实施方式并与说明书一起用于解释本发明的原理。在所述图中：
图1是描述本发明的LCD装置用薄膜晶体管的截面图。
具体实施方式
现在可以详细参考本发明的优选实施方式，其实例在附图中说明。在任何可能情况下，在整个附图中使用相同的附图标记指代相同或类似的部分。
下文中，参考所述附图对本发明的LCD装置用薄膜晶体管进行描述。
图1是描述本发明的LCD装置用薄膜晶体管的截面图。
如图1所示，所述薄膜晶体管包括形成在透明绝缘基板10上的栅极11；在所述栅极11上由具有高介电常数的绝缘材料形成的栅极绝缘膜12；形成在所述栅极绝缘膜12上的半导体层13，其中所述半导体层13由高度掺杂有n-型杂质的不纯的无定形硅材料和未掺杂有杂质的无定形硅材料构成；以及源极和栅极16a和16b，所述源极和栅极16a和16b以预定的间隔形成，在所述栅极11上裸露预定部分的所述半导体层13。
然后，在源极和漏极16a和16b上形成钝化层18，其中所述钝化层18配有接触孔以暴露出漏极16b。通过所述接触孔，像素电极19与所述漏极16b电连通。
在所述薄膜晶体管具有上述结构的情况下，所述栅极绝缘膜由具有官能团(R)、金属氧化物(Me)、硅(Si)和氧(O)的键结构的高介电常数绝缘体形成。
所述以官能团(R)、金属氧化物(Me)、硅(Si)和氧(O)的键结构形成的高介电常数绝缘体具有8以上的介电常数。
所述官能团(R)可由有机基团、无机聚合物(例如聚膦腈、聚硅氧烷、聚硅烷(polysilzne)等、有机/无机杂化聚合物、单一有机聚合物(例如聚丙烯酸酯、聚酰亚胺、聚酯)，或复合有机聚合物(例如共聚物)中的任一种形成。并且，所述金属氧化物(Me)可由钛酸钡锶、钛锆酸钡、钛锆酸铅、钛酸铅镧、钛酸锶、钛酸钡、氟化钡镁、钛酸铋、钽酸锶铋、铌钽酸锶铋、Al2O3、MgO、CaO、ZrSiO4、HfSiO4、Y2O3、ZrO2、HfO2、SrO、La2O3、Ta2O5、BaO或TiO2中的任一种形成。
此时，所述高介电常数绝缘体可形成为梯型单元结构，其具有如化学式1所示的二维键结构，或者可以形成为笼型单元结构，其具有如化学式2所示的三维键结构。
[化学式1]
Figure S2007103001097D00041
[化学式2]
Figure S2007103001097D00051
因此，化学式1中所示的梯型单元结构具有分布在相应顶点的三个硅(Si)原子和三个金属氧化物(Me)，以形成硅(Si)-氧(O)-金属氧化物(Me)的单元键。化学式2中所示的笼型单元结构具有分布在相应顶点的四个硅(Si)原子和四个金属氧化物(Me)，以形成硅(Si)-氧(O)-金属氧化物(Me)的单元键结构。
所述六面笼型单元结构形成有分别分布在八个顶点的四个硅(Si)原子和四个金属氧化物(Me)。然而，也可能提供多面笼型单元结构，其中硅(Si)原子和金属氧化物(Me)分别分布在九个至十八个顶点上。
当金属氧化物(Me)数量增加时，所述介电常数增加。
并且，所述梯型和笼型单元结构披露的都是硅(Si)-氧(O)-金属氧化物(Me)单元结构。然而，所述单元结构可以变化为硅(Si)-氧(O)-硅(Si)或金属氧化物(Me)-氧(O)-金属氧化物(Me)。
将所述高介电常数绝缘体应用于LCD装置用薄膜晶体管，所述薄膜晶体管包括作为半导体层13的硅层。然而，所述高介电常数绝缘体可应用于包括有机半导体层的有机薄膜晶体管。此时，所述有机半导体层可由液晶聚芴嵌段共聚物(LCPBC)、并五苯或聚噻吩中的任一种形成。
如上所述，本发明的LCD装置用薄膜晶体管具有以下优点。
在本发明的LCD装置用薄膜晶体管的情况中，所述栅极绝缘膜由具有官能团(R)、金属氧化物(Me)、硅(Si)和氧(O)的键结构的高介电常数绝缘体形成，因此实现了高电荷迁移率并降低了薄膜晶体管的漏电流。
对于本领域技术人员显而易见的是可在不背离本发明的精神或范围的条件下获得本发明的各种改进和变化。因此，倘若本发明的改进和变化进入了所附权利要求和其等价物的范围内，则本发明将涵盖所述改进和变化。

Claims (8)

1.一种LCD装置用薄膜晶体管，所述薄膜晶体管包括：
形成在基板上的栅极；
由具有官能团、金属氧化物、硅和氧的键结构的高介电常数绝缘体形成的栅极绝缘膜；和
形成在所述栅极绝缘膜上的源极和漏极，
其中所述高介电常数绝缘体具有硅(Si)-氧(O)-金属氧化物(Me)的单元键结构，
其中所述硅(Si)-氧(O)-金属氧化物(Me)的单元键结构为梯型单元结构，其具有分别分布在六个顶点上的硅和金属氧化物；或者其中所述硅(Si)-氧(O)-金属氧化物(Me)的单元键结构为笼型单元结构，其具有分别分布在八个顶点上，或分别分布在九个至十八个顶点上的硅和金属氧化物。
2.如权利要求1所述的薄膜晶体管，其中所述硅(Si)-氧(O)-金属氧化物(Me)的单元键结构变化为金属氧化物(Me)-氧(O)-金属氧化物(Me)的单元键结构。
3.如权利要求1所述的薄膜晶体管，其中所述硅(Si)-氧(O)-金属氧化物(Me)的单元键结构变化为硅(Si)-氧(O)-硅(Si)的单元键结构。
4.如权利要求1所述的薄膜晶体管，其中所述官能团由有机基团、无机聚合物、有机/无机杂化聚合物、单一有机聚合物或复合有机聚合物中的任一种形成。
5.如权利要求1所述的薄膜晶体管，其中所述金属氧化物由钛酸钡锶、钛锆酸钡、钛锆酸铅、钛酸铅镧、钛酸锶、钛酸钡、氟化钡镁、钛酸铋、钽酸锶铋、铌钽酸锶铋、Al2O3、MgO、CaO、ZrSiO4、HfSiO4、Y2O3、ZrO2、HfO2、SrO、La2O3、Ta2O5、BaO或TiO2中的任一种形成。
6.如权利要求1所述的薄膜晶体管，所述薄膜晶体管进一步包括形成在所述栅极绝缘膜和所述源极和漏极之间的半导体层。
7.如权利要求6所述的薄膜晶体管，其中所述半导体层由硅层形成。
8.如权利要求6所述的薄膜晶体管，其中所述半导体层由相应于液晶聚芴嵌段共聚物、并五苯或聚噻吩中的任一种的有机半导体层形成。
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