CN101211796A - 采用现有键合机台在芯片上实现球上接点键合的方法 - Google Patents

采用现有键合机台在芯片上实现球上接点键合的方法 Download PDF

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CN101211796A
CN101211796A CNA2006101480834A CN200610148083A CN101211796A CN 101211796 A CN101211796 A CN 101211796A CN A2006101480834 A CNA2006101480834 A CN A2006101480834A CN 200610148083 A CN200610148083 A CN 200610148083A CN 101211796 A CN101211796 A CN 101211796A
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chip
bonding
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bonding machine
machine platform
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毛遂
陈建华
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Semiconductor Manufacturing International Shanghai Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本发明提供了一种采用现有键合机台在芯片上实现球上接点键合的方法，所述现有键合机台能够从第一焊接点引线键合至第二焊接点，所述方法包括下列步骤：(1)在芯片上需要球上接点键合的位置植金球；(2)采用现有键合机台从第一焊接点引线，并使第二焊接点压在金球上。本发明通过对现有键合设备进行调试、改进，使其具有与新机台相同的功能，从而缓解新机台产能不足的问题，既节省了新机台的购置成本，又提高了旧机台的使用率。

Description

采用现有键合机台在芯片上实现球上接点键合的方法
技术领域
本发明涉及半导体制造工艺，尤其涉及一种引线键合方法。
背景技术
随着半导体器件制造工艺的不断进步，传统的引线键合(wire bonding)方式正逐渐被新的键合工艺所取代，尤其对于芯片键合而言，传统的键合方式由于缺乏对芯片的抗震保护，使得芯片在键合机台产生的超声震荡及压力下十分容易损坏。
作为传统键合工艺的一种改进，球上接点键合(BSOB，Bond Stitch On Ball)技术已被广泛用于芯片的键合。BSOB技术主要是在引线键合前，先在引线的第二焊接点(stitch bonding)处植上一个金球，然后再进行引线键合。采用BSOB方式的优点在于：(1)金球的温度高，键合时更容易形成良好的形变，与金镀层产生可靠的互连；(2)金球直径较大，可增加粘附面积，提高键合强度；(3)金球可防止超声震荡、压力直接施加于芯片表面，对芯片起到抗震保护作用。
新型的键合机台大都具有BSOB功能，而型号较老的机台则不具有BSOB功能。当晶圆代工厂需要采用BSOB工艺生产大批芯片时，可能由于新机台数量不够而无法满足产能要求。如果为此购置一批新的键合机台，不仅需要投入巨额成本，而且当订单较少时，还会造成资源闲置。因此，需要一种方法，能使型号较老的机台实现BSOB功能，以缓解新机台产能不足的问题。
发明内容
本发明的目的在于提供一种采用现有键合机台在芯片上实现球上接点键合的方法，通过对现有设备进行调试、改进，使其具有与新机台相同的功能，从而缓解新机台产能不足的问题，并能降低晶圆代工厂的设备购置成本。
为了达到上述的目的，本发明提供一种采用现有键合机台在芯片上实现球上接点键合的方法，所述现有键合机台能够从第一焊接点引线键合至第二焊接点，所述方法包括下列步骤：(1)在芯片上需要球上接点键合的位置植金球；(2)采用现有键合机台从第一焊接点引线，并使第二焊接点压在金球上。
在上述的采用现有键合机台在芯片上实现球上接点键合的方法中，于步骤(1)和步骤(2)之间还包括：调整现有键合机台的参数，使引线的第二焊接点与金球的位置对准。
在上述的采用现有键合机台在芯片上实现球上接点键合的方法中，所述第二焊接点压在金球的中心位置，并压成鱼尾形。
在上述的采用现有键合机台在芯片上实现球上接点键合的方法中，所述第一焊接点位于金属框架上或位于另一片芯片上。
本发明采用现有的不具备BSOB功能的键合机台，通过手动增加植金球步骤，并通过调整机台参数，使这些现有的机台也能实现BSOB功能，从而节省了新机台的购置成本，也提高了旧机台的使用率。此外，由于调整后的参数具有可复制性，因此可以直接用于同类的其它键合机台。
附图说明
通过以下实施例并结合其附图的描述，可以进一步理解其发明的目的、具体结构特征和优点。其中，附图为：
图1为本发明具体实施例的BSOB引线键合方法示意图；
图2为图1所示的第二焊接点的放大示意图。
具体实施方式
下面结合图1和图2对本发明的采用现有键合机台在芯片上实现球上接点键合的方法作进一步的详细描述。
本发明的方法主要是利用晶圆代工厂现有的型号较老的键合机台来实现BSOB功能。以采用BSOB方式从芯片1引线键合至芯片2为例，本发明的方法首先在芯片2上需要BSOB引线键合的位置植上金球3，如图1(a)所示；接着，根据芯片2上金球3的位置相应调整机台参数，使引线的第二焊接点能落在金球3上；然后，如图1(b)所示，采用键合机台从芯片1上的第一焊接点41引线4，并使第二焊接点42压在芯片2的金球3上，至此，便完成了芯片1到芯片2的BSOB引线键合。
为了达到较高的工艺要求，在调整机台参数时，应使引线4的第二焊接点42能压在金球3的中心位置，如图2所示，较佳地，该焊接点42还应被压成鱼尾形，以提供更高的键合强度。
首次机台参数调整可能会花费较长的时间，但是调整后的参数具有可复制性，能直接用于同类机台完成相同的工艺，对于批量生产而言，具有很强的实用性。通过在现有的旧机台上采用本发明的方法，可以大大节省成本，并且提高旧机台的使用率。

Claims (6)

1.一种采用现有键合机台在芯片上实现球上接点键合的方法，所述现有键合机台能够从第一焊接点引线键合至第二焊接点，其特征在于，所述方法包括下列步骤：
(1)在芯片上需要球上接点键合的位置植金球；
(2)采用现有键合机台从第一焊接点引线，并使第二焊接点压在金球上。
2.如权利要求1所述的采用现有键合机台在芯片上实现球上接点键合的方法，其特征在于，所述方法于步骤(1)和步骤(2)之间还包括：调整现有键合机台的参数，使引线的第二焊接点与金球的位置对准。
3.如权利要求1所述的采用现有键合机台在芯片上实现球上接点键合的方法，其特征在于：所述第二焊接点压在金球的中心位置。
4.如权利要求1所述的采用现有键合机台在芯片上实现球上接点键合的方法，其特征在于：所述第二焊接点压成鱼尾形。
5.如权利要求1所述的采用现有键合机台在芯片上实现球上接点键合的方法，其特征在于：所述第一焊接点位于金属框架上。
6.如权利要求1所述的采用现有键合机台在芯片上实现球上接点键合的方法，其特征在于：所述第一焊接点位于另一片芯片上。
CNA2006101480834A 2006-12-27 2006-12-27 采用现有键合机台在芯片上实现球上接点键合的方法 Pending CN101211796A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101877337A (zh) * 2009-04-30 2010-11-03 日亚化学工业株式会社 半导体装置及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101877337A (zh) * 2009-04-30 2010-11-03 日亚化学工业株式会社 半导体装置及其制造方法

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