CN101194338B - 具有多个异相电极的高频等离子体源 - Google Patents

具有多个异相电极的高频等离子体源 Download PDF

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Publication number
CN101194338B
CN101194338B CN2006800163680A CN200680016368A CN101194338B CN 101194338 B CN101194338 B CN 101194338B CN 2006800163680 A CN2006800163680 A CN 2006800163680A CN 200680016368 A CN200680016368 A CN 200680016368A CN 101194338 B CN101194338 B CN 101194338B
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China
Prior art keywords
electrode
source
plasma
frequency generator
electrodes
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Expired - Fee Related
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CN2006800163680A
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English (en)
Chinese (zh)
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CN101194338A (zh
Inventor
艾伯特·罗杰斯·埃林博
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Dublin City University
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Dublin City University
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Priority claimed from US11/127,328 external-priority patent/US7342361B2/en
Application filed by Dublin City University filed Critical Dublin City University
Publication of CN101194338A publication Critical patent/CN101194338A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN2006800163680A 2005-05-11 2006-05-11 具有多个异相电极的高频等离子体源 Expired - Fee Related CN101194338B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/127,328 2005-05-11
IE20050301A IES20050301A2 (en) 2005-05-11 2005-05-11 Plasma source
US11/127,328 US7342361B2 (en) 2005-05-11 2005-05-11 Plasma source
IES2005/0301 2005-05-11
PCT/EP2006/062261 WO2006120239A1 (en) 2005-05-11 2006-05-11 Hf- plasma source with plurality of out - of- phase electrodes

Publications (2)

Publication Number Publication Date
CN101194338A CN101194338A (zh) 2008-06-04
CN101194338B true CN101194338B (zh) 2010-09-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800163680A Expired - Fee Related CN101194338B (zh) 2005-05-11 2006-05-11 具有多个异相电极的高频等离子体源

Country Status (8)

Country Link
US (1) US7886690B2 (enExample)
EP (2) EP1883947A1 (enExample)
JP (1) JP5335418B2 (enExample)
KR (1) KR101312380B1 (enExample)
CN (1) CN101194338B (enExample)
CA (1) CA2606864A1 (enExample)
IE (1) IES20050301A2 (enExample)
WO (1) WO2006120239A1 (enExample)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
US9281176B2 (en) 2012-06-29 2016-03-08 Taewon Lighting Co., Ltd. Microwave plasma lamp with rotating field
US9734990B2 (en) 2011-10-13 2017-08-15 Korea Advanced Institute Of Science And Technology Plasma apparatus and substrate-processing apparatus
US9960011B2 (en) 2011-08-01 2018-05-01 Plasmart Inc. Plasma generation apparatus and plasma generation method

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TWI440405B (zh) * 2007-10-22 2014-06-01 New Power Plasma Co Ltd 電容式耦合電漿反應器
US8409991B2 (en) 2007-12-20 2013-04-02 Oerlikon Solar Ag, Trubbach Method for manufacturing large-area vacuum plasma treated substrates and vacuum plasma treatment apparatus
GB2458953B (en) * 2008-04-04 2010-09-15 Univ Dublin City Power splitter
GB2466836A (en) * 2009-01-12 2010-07-14 Phive Plasma Technologies Ltd Plasma source tile electrode
JP5248370B2 (ja) * 2009-03-10 2013-07-31 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
KR101842675B1 (ko) 2009-07-08 2018-03-27 플라즈마시, 인크. 플라즈마 처리를 위한 장치 및 방법
WO2011070721A1 (ja) * 2009-12-09 2011-06-16 パナソニック株式会社 高周波加熱装置及び高周波加熱方法
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
US8765232B2 (en) 2011-01-10 2014-07-01 Plasmasi, Inc. Apparatus and method for dielectric deposition
US9299956B2 (en) 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
US10526708B2 (en) 2012-06-19 2020-01-07 Aixtron Se Methods for forming thin protective and optical layers on substrates
US20130337657A1 (en) * 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US20140141619A1 (en) * 2012-11-19 2014-05-22 Tokyo Electron Limited Capacitively coupled plasma equipment with uniform plasma density
KR102222902B1 (ko) 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
JP6356516B2 (ja) * 2014-07-22 2018-07-11 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
JP6433202B2 (ja) * 2014-08-29 2018-12-05 国立大学法人大阪大学 プラズマ処理装置および当該装置を用いたｓｏｉウエハの加工方法
JP2016082180A (ja) * 2014-10-22 2016-05-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
EP3091559A1 (en) 2015-05-05 2016-11-09 TRUMPF Huettinger Sp. Z o. o. Plasma impedance matching unit, system for supplying rf power to a plasma load, and method of supplying rf power to a plasma load
US20170092470A1 (en) * 2015-09-28 2017-03-30 Applied Materials, Inc. Plasma reactor for processing a workpiece with an array of plasma point sources
DE102016104490B3 (de) * 2016-03-11 2017-05-24 Epcos Ag Vorrichtung und Verfahren zur Erzeugung eines nichtthermischen Atmosphärendruck-Plasmas
US10264663B1 (en) 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
CN109831866B (zh) * 2017-11-23 2023-10-20 核工业西南物理研究院 一种双环电极共面放电等离子体发生装置
CN110158058A (zh) * 2018-02-16 2019-08-23 等离子体成膜有限公司 等离子体处理装置
US11515123B2 (en) * 2018-12-21 2022-11-29 Advanced Energy Industries, Inc. Apparatus and system for modulated plasma systems
US11804362B2 (en) * 2018-12-21 2023-10-31 Advanced Energy Industries, Inc. Frequency tuning for modulated plasma systems
CN113727483B (zh) * 2021-09-02 2022-12-20 合肥爱普利等离子体有限责任公司 一种多电极交流电弧放电装置、设备及交流电源
CN117295222A (zh) * 2023-09-25 2023-12-26 中国科学技术大学 一种多方向源电容耦合等离子体源装置及其处理方法

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DE19853121C1 (de) * 1998-11-18 2000-02-24 Poll Hans Ulrich Verfahren und Einrichtung zur Behandlung eines Substrates in einem Hochfrequenzplasma und Anwendung der Einrichtung

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9960011B2 (en) 2011-08-01 2018-05-01 Plasmart Inc. Plasma generation apparatus and plasma generation method
US9734990B2 (en) 2011-10-13 2017-08-15 Korea Advanced Institute Of Science And Technology Plasma apparatus and substrate-processing apparatus
US9281176B2 (en) 2012-06-29 2016-03-08 Taewon Lighting Co., Ltd. Microwave plasma lamp with rotating field

Also Published As

Publication number Publication date
KR20080022546A (ko) 2008-03-11
IES20050301A2 (en) 2006-11-15
WO2006120239A1 (en) 2006-11-16
EP1883947A1 (en) 2008-02-06
JP2008541367A (ja) 2008-11-20
KR101312380B1 (ko) 2013-09-27
US20080309242A1 (en) 2008-12-18
EP2154704A1 (en) 2010-02-17
EP2154704B9 (en) 2014-01-15
CN101194338A (zh) 2008-06-04
EP2154704B1 (en) 2013-10-23
JP5335418B2 (ja) 2013-11-06
CA2606864A1 (en) 2006-11-16
US7886690B2 (en) 2011-02-15

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Granted publication date: 20100915