KR101312380B1 - 복수의 이상 전극을 갖는 고주파수 플라즈마 소스 - Google Patents

복수의 이상 전극을 갖는 고주파수 플라즈마 소스 Download PDF

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Publication number
KR101312380B1
KR101312380B1 KR1020077028736A KR20077028736A KR101312380B1 KR 101312380 B1 KR101312380 B1 KR 101312380B1 KR 1020077028736 A KR1020077028736 A KR 1020077028736A KR 20077028736 A KR20077028736 A KR 20077028736A KR 101312380 B1 KR101312380 B1 KR 101312380B1
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KR
South Korea
Prior art keywords
electrodes
plasma
electrode
low frequency
frequency generator
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Expired - Fee Related
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KR1020077028736A
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Korean (ko)
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KR20080022546A (ko
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알버트 로져스 엘링보
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더블린 시티 유니버시티
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Priority claimed from US11/127,328 external-priority patent/US7342361B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077028736A 2005-05-11 2006-05-11 복수의 이상 전극을 갖는 고주파수 플라즈마 소스 Expired - Fee Related KR101312380B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/127,328 2005-05-11
IE20050301A IES20050301A2 (en) 2005-05-11 2005-05-11 Plasma source
US11/127,328 US7342361B2 (en) 2005-05-11 2005-05-11 Plasma source
IES2005/0301 2005-05-11
PCT/EP2006/062261 WO2006120239A1 (en) 2005-05-11 2006-05-11 Hf- plasma source with plurality of out - of- phase electrodes

Publications (2)

Publication Number Publication Date
KR20080022546A KR20080022546A (ko) 2008-03-11
KR101312380B1 true KR101312380B1 (ko) 2013-09-27

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KR1020077028736A Expired - Fee Related KR101312380B1 (ko) 2005-05-11 2006-05-11 복수의 이상 전극을 갖는 고주파수 플라즈마 소스

Country Status (8)

Country Link
US (1) US7886690B2 (enExample)
EP (2) EP1883947A1 (enExample)
JP (1) JP5335418B2 (enExample)
KR (1) KR101312380B1 (enExample)
CN (1) CN101194338B (enExample)
CA (1) CA2606864A1 (enExample)
IE (1) IES20050301A2 (enExample)
WO (1) WO2006120239A1 (enExample)

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JP5248370B2 (ja) * 2009-03-10 2013-07-31 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
KR101842675B1 (ko) 2009-07-08 2018-03-27 플라즈마시, 인크. 플라즈마 처리를 위한 장치 및 방법
WO2011070721A1 (ja) * 2009-12-09 2011-06-16 パナソニック株式会社 高周波加熱装置及び高周波加熱方法
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
US8765232B2 (en) 2011-01-10 2014-07-01 Plasmasi, Inc. Apparatus and method for dielectric deposition
KR101241049B1 (ko) 2011-08-01 2013-03-15 주식회사 플라즈마트 플라즈마 발생 장치 및 플라즈마 발생 방법
KR101246191B1 (ko) 2011-10-13 2013-03-21 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
US9299956B2 (en) 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
US10526708B2 (en) 2012-06-19 2020-01-07 Aixtron Se Methods for forming thin protective and optical layers on substrates
US20130337657A1 (en) * 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
KR101332337B1 (ko) 2012-06-29 2013-11-22 태원전기산업 (주) 초고주파 발광 램프 장치
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US20140141619A1 (en) * 2012-11-19 2014-05-22 Tokyo Electron Limited Capacitively coupled plasma equipment with uniform plasma density
KR102222902B1 (ko) 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
JP6356516B2 (ja) * 2014-07-22 2018-07-11 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
JP6433202B2 (ja) * 2014-08-29 2018-12-05 国立大学法人大阪大学 プラズマ処理装置および当該装置を用いたｓｏｉウエハの加工方法
JP2016082180A (ja) * 2014-10-22 2016-05-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
EP3091559A1 (en) 2015-05-05 2016-11-09 TRUMPF Huettinger Sp. Z o. o. Plasma impedance matching unit, system for supplying rf power to a plasma load, and method of supplying rf power to a plasma load
US20170092470A1 (en) * 2015-09-28 2017-03-30 Applied Materials, Inc. Plasma reactor for processing a workpiece with an array of plasma point sources
DE102016104490B3 (de) * 2016-03-11 2017-05-24 Epcos Ag Vorrichtung und Verfahren zur Erzeugung eines nichtthermischen Atmosphärendruck-Plasmas
US10264663B1 (en) 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
CN109831866B (zh) * 2017-11-23 2023-10-20 核工业西南物理研究院 一种双环电极共面放电等离子体发生装置
CN110158058A (zh) * 2018-02-16 2019-08-23 等离子体成膜有限公司 等离子体处理装置
US11515123B2 (en) * 2018-12-21 2022-11-29 Advanced Energy Industries, Inc. Apparatus and system for modulated plasma systems
US11804362B2 (en) * 2018-12-21 2023-10-31 Advanced Energy Industries, Inc. Frequency tuning for modulated plasma systems
CN113727483B (zh) * 2021-09-02 2022-12-20 合肥爱普利等离子体有限责任公司 一种多电极交流电弧放电装置、设备及交流电源
CN117295222A (zh) * 2023-09-25 2023-12-26 中国科学技术大学 一种多方向源电容耦合等离子体源装置及其处理方法

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US6632322B1 (en) 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
US6884635B2 (en) 2000-03-28 2005-04-26 Tokyo Electron Limited Control of power delivered to a multiple segment inject electrode

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US6252354B1 (en) 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
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US6632322B1 (en) 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control

Also Published As

Publication number Publication date
KR20080022546A (ko) 2008-03-11
IES20050301A2 (en) 2006-11-15
WO2006120239A1 (en) 2006-11-16
EP1883947A1 (en) 2008-02-06
JP2008541367A (ja) 2008-11-20
US20080309242A1 (en) 2008-12-18
EP2154704A1 (en) 2010-02-17
EP2154704B9 (en) 2014-01-15
CN101194338B (zh) 2010-09-15
CN101194338A (zh) 2008-06-04
EP2154704B1 (en) 2013-10-23
JP5335418B2 (ja) 2013-11-06
CA2606864A1 (en) 2006-11-16
US7886690B2 (en) 2011-02-15

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