TW447035B - Modular plate plasma source device - Google Patents

Modular plate plasma source device Download PDF

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Publication number
TW447035B
TW447035B TW89114042A TW89114042A TW447035B TW 447035 B TW447035 B TW 447035B TW 89114042 A TW89114042 A TW 89114042A TW 89114042 A TW89114042 A TW 89114042A TW 447035 B TW447035 B TW 447035B
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Taiwan
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plasma
plate
antenna
patent application
item
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TW89114042A
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Chinese (zh)
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Chia-Ching Tu
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Dura Tek Inc
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Abstract

A modular plate plasma source device is disclosed, which comprises at least two long plate-like antennas, at least a radio frequency power source and a reference potential, wherein the long plate-like antennas are mutually arranged in parallel and can induce plasma, and each long plate-like antenna comprises a main body plate and an inductive coil. The inductive coil winds from one end of the main body plate to the other end in a tilted direction. The radio frequency power source is connected to the inductive coil in parallel or serial manner. The reference potential connects to the inductive coil corresponding to the radio frequency power source.

Description

44703 5 五、發明說明(1) 【發明領域】 本發明係有關於一種模組式板狀電漿源裝置,特別是— 種高密度之電漿源裝置。 尤其是適用在大型液晶面板〔如TFT LCD、TN LCD、STN LCD等〕製程中電漿處理室之電漿源裝置,其中該電漿源 裝置為模組化。 【先前技術】 目前在高密度電漿系統之電漿源裝置主要分為微波輕合 〔microwave coupling〕與感應耦合電漿〔inductively coupled plasma〕兩類,其中用於感應耦合電漿之感應線 圈如十華民國專利公報第345677號,其可分為圓柱狀螺旋 線圈、平坦盤狀螺旋線圈、圓頂狀螺旋線圈及上述幾種之 混合線圈,其主要處理的是圓盤式半導體晶圓,故其處理 腔一般為圓柱形,並以至少一組感應線圈纏繞柱壁或頂44703 5 V. Description of the invention (1) [Field of the invention] The present invention relates to a modular plate-shaped plasma source device, in particular, a high-density plasma source device. It is especially suitable for the plasma source device in the plasma processing chamber during the manufacture of large liquid crystal panels (such as TFT LCD, TN LCD, STN LCD, etc.). The plasma source device is modular. [Previous technology] At present, plasma source devices in high-density plasma systems are mainly divided into two categories: microwave coupling and inductively coupled plasma. Among them, induction coils for inductively coupled plasmas are Shihua Republic Patent Gazette No. 34577, which can be divided into cylindrical spiral coils, flat disc spiral coils, dome spiral coils, and the above-mentioned hybrid coils. The main processing is disc semiconductor wafers, so The processing cavity is generally cylindrical, and the column wall or the top is wound with at least one set of induction coils.

面,因此不適用方板形之基板。· 當要以電漿處理如lOOOx 1 0 0 0mm2大尺寸基板時 1 400 X 1 40 0mm2以上之電漿反應室,習用之電漿源感應線 圈需針對不同之反應室量身製造,對此一大尺寸之反應室 之電漿產生均勻度較難控制,如精準度不夠即須重作而無 法模組化裝設,此外’若要在電漿處理室中製造對應於該 電漿源如此大尺寸之介電窗口極為困難且需要極高昂之成 本。 【發明目的】 本發明之第一目的在於提供一種模組式板狀電漿源裝Surface, so it is not suitable for square plate substrates. · When plasma processing large-size substrates such as 1000x 1 0 0 mm2, plasma reaction chambers above 1 400 X 1 400 mm2, conventional plasma source induction coils need to be tailored for different reaction chambers. The uniformity of plasma generation in a large-sized reaction chamber is difficult to control. If the accuracy is not enough, it must be reworked and cannot be installed in a modular manner. In addition, 'If you want to make a plasma source with such a large size in a plasma processing chamber, Dielectric windows are extremely difficult and costly. [Objective of the Invention] The first object of the present invention is to provide a modular plate plasma source device.

C:\Logo-5\Five Continents\PK7347.ptd 第4頁 44 70 35 五 、發明說明(2) 置’利用長板狀天線與射頻電源之多樣化不受限之連接佈 置,達到模組化之功效,而能對不同尺寸基板之電漿處 理。 本發明之第二目的在於提供一種長板狀天線’利用該長 板狀天線包含螺旋彈簧狀之感應線圈及套設該線圈之介電 套管,使得可模組式組成一電漿源裝置。 〇 本發明之第三目的在於提供一種電漿處理室,利用裝有 —模組式板狀電漿源裝置,使得能選用相對之較小尺寸介 電窗口而能降低成本β 【發明之技術手段】 本發明之模組式板狀電漿源裝置主要包含至少二長板狀 天線、至少一射頻電源及至少一參考電位,其中該長板狀 天線係相鄰平行排列而能感應電漿,每—長板狀天線包含 一本體板及一感應線圈’該感應線圈係由本體板之一端斜 向纏繞至另一端,該射頻電源以並聯或串聯方式連接感應 線圈,該參考電位對應於射頻電源而連接感應線圈^ 【實施例】 請參閱所附圖式,將本發明舉下列實施例說明: 如第1至3圖所示’依本發明之模組式板狀電漿源裝置之 一實施例主要包含六長板狀天線61、62、63、64、65 ' 66、一射頻電源72、82及二參考電位Μ、83。 每一長板狀天線61、62、63、64、65、66相鄰地相互平 行排列’為使本發明之電衆源裝置能模組化裝設,故每一 長板狀天線61、62、63、64、65、66具有相同之構造’如C: \ Logo-5 \ Five Continents \ PK7347.ptd Page 4 44 70 35 V. Description of the invention (2) Set up the use of diversified and unrestricted connection arrangement of long plate antenna and RF power to achieve modularization Effect, and can be used for plasma processing of different size substrates. A second object of the present invention is to provide a long-plate antenna. The long-plate antenna includes a coil spring-shaped induction coil and a dielectric sleeve covering the coil, so that a plasma source device can be modularized. 〇 The third object of the present invention is to provide a plasma processing chamber, which uses a modular plate plasma source device, so that a relatively small-sized dielectric window can be used to reduce costs. [Technical means of the invention The modular plate-shaped plasma source device of the present invention mainly includes at least two long plate-shaped antennas, at least one radio frequency power source, and at least one reference potential. The long plate-shaped antennas are arranged adjacent to each other in parallel and can induce the plasma. —The long plate antenna includes a body plate and an induction coil. The induction coil is diagonally wound from one end of the body plate to the other end. The radio frequency power supply is connected to the induction coils in parallel or in series. The reference potential corresponds to the radio frequency power supply. Connect the induction coil ^ [Embodiment] Please refer to the attached drawings to illustrate the present invention by the following embodiments: As shown in Figs. 1 to 3, an embodiment of the modular plate plasma source device according to the present invention It mainly includes six long plate antennas 61, 62, 63, 64, 65 '66, a radio frequency power source 72, 82, and two reference potentials M, 83. Each long plate antenna 61, 62, 63, 64, 65, 66 is adjacent to each other and arranged parallel to each other. 'In order to enable the electric source device of the present invention to be modularized, each long plate antenna 61, 62, 63, 64, 65, 66 have the same structure

C:\Logo-5\Five Continents\PK7347,ptd 第5頁 447035______ 五、發明說明(3) 第2圖所示,以其中一長板狀天線6 1為例,該長板狀天線 61主要包含一本體板6 12及一感應線圈611,其中該本體板 6 1 2係為長條板並由石英或氧化紹等介電材質或含鐵、姑 或鎳之導磁材質所製成,該感應線圈611係由本體板6 1 2之 一端斜向纏繞至另一端,因此該長板狀天線6 1能感應電漿. 及模組化設置。此外,本體板61 2具有易於取放調整及對 感應線圈611定形之功效。 射頻電源7 2、8 2,即一種交流電流以並聯或串聯方式連 接感應線圈,在本實施例中〔如第3圖所.示〕係以交錯並 聯之方式連接長板狀天線61、62、63、64、65、66之感應 線圈 611、621、631、641、651、661,即長板狀天線 61、 63、 65之一端並聯至第一射頻電源72而另一端並聯至一參 考電位73 ’同時,長板狀天線62、64、66之一端並聯至第 二射頻電源82而另一端並聯至另一參考電位83,而形成適 用於較大型電漿處理室之模組式電漿源裝置,由於兩射頻. 電源72、82以交錯並聯方式連接長板狀天線61、62、 翁 0 64、 65、66且位於不同側,故具有較佳之電感均勻度。當 電源切換頻率係可調整地介於ΙΟΟΚΗζ至4〇MHz之中、高頻 率,利用電子在射頻電場(Radio Frequency)中獲得能量 游離氣體,而感應出高密度電漿[1〇ιι〜l〇i2cra-3〕。。此 外’由於該長板狀天線6 1、6 2、6 3、6 4、6 5、6.6係對應於 該方形基板4 0而相互平行排列,當啟動兩射頻電源72、82 時將產生能均勻處理方形基板4〇之電漿,以防止作業死 角。C: \ Logo-5 \ Five Continents \ PK7347, ptd Page 5 447035______ 5. Explanation of the invention (3) As shown in Figure 2, one of the long plate antennas 61 is used as an example. The long plate antenna 61 mainly includes A body plate 6 12 and an induction coil 611. The body plate 6 1 2 is a long plate and is made of a dielectric material such as quartz or oxide or a magnetically permeable material containing iron, iron, or nickel. The coil 611 is obliquely wound from one end of the body plate 6 1 2 to the other end, so the long plate antenna 61 can sense the plasma. In addition, the body plate 612 has the functions of being easy to place and adjust, and shaping the induction coil 611. RF power supply 7 2, 8 2 is an alternating current connected to the induction coils in parallel or in series. In this embodiment [as shown in Figure 3], the long plate antennas 61, 62, and 63, 64, 65, 66 induction coils 611, 621, 631, 641, 651, 661, that is, one of the long plate antennas 61, 63, 65 is connected in parallel to the first RF power source 72 and the other end is connected to a reference potential 73 'At the same time, one end of the long plate antennas 62, 64, 66 is connected in parallel to the second RF power source 82 and the other end is connected to another reference potential 83 to form a modular plasma source device suitable for a larger plasma processing chamber. Since the two radio frequency power sources 72, 82 are connected in a staggered parallel manner to the long plate antennas 61, 62, Weng 0 64, 65, 66 and are located on different sides, they have better uniformity of inductance. When the power switching frequency is adjustable between 100KΗζ to 40MHz and high frequency, the electrons are used to obtain energy free gas in a radio frequency electric field (Radio Frequency), and a high-density plasma is induced [1〇ιι ~ l〇 i2cra-3]. . In addition, 'because the long plate antennas 6 1, 6, 2, 6, 3, 6, 4, 6, 5, and 6.6 correspond to the square substrate 40 and are arranged in parallel with each other, when the two RF power sources 72 and 82 are activated, uniform energy will be generated. Plasma treatment of square substrates 40 to prevent dead corners.

C:\Logo-5\Five C〇ntinents\PK7347,ptd 第6頁 447035 五、發明說明(4) 參考電位73、83 ’係分別對應於 感應線圏611、621、631、641、6Sl頻電源72、82並連接 電位。 、6 61 ’其較佳為接地 此外,本發明之模組式板狀電喈 电水源裝置另包含匹配糰政 71、81,其對應於射頻電源72、82而、“ 網路 82 與感應線圈之間 611、621、63i、64i、65i、6j 二 如第!圖所示’當以本發明之上述模組式板狀電漿源裝 置裝設於-電漿處理室’其中該電毁處理室係呈方塊形, 〇 用以處理如液晶面板〔TFT LCD、、TN LCD、STN LCD〕或其 他玻片〔如FED、EL等等]等基板4〇,目前第35代玻片之 尺寸為680x 880 mm2 ’而該電漿處理可運用於物理氣相沉 積、化學氣相沉積及钱刻等半導體之製程;該電漿處理室 至少包含: 一電漿腔10,其内含電漿氣體·,該電漿腔1〇設有數齊狀 介電窗口,在本實施例則為六個介電窗口 5 1、5 2、5 3 54、55、56,其中每一介電窗口 51、52、53、54、55、56' Ο 係由石英或氧化鋁等介電材質所製成,且每一介電窗口 5 1、5 2、5 3、5 4、5 5、5 6係分別對應於每一長板狀天線 61、62、63、64、65、66,以供上述之板狀電漿源裝置之 設置。 一抽氣幫浦2 0,設於電装腔1 0用以抽氣減壓至1 m Torr 至lOOTorr,而成為適合電漿產生之壓力,並以—真空計 2 1檢測該壓力。 一基板載台30,設於電漿腔10内用以承載基板40。C: \ Logo-5 \ Five C〇ntinents \ PK7347, ptd Page 6 447035 V. Description of the invention (4) Reference potentials 73 and 83 'are corresponding to the induction lines 圏 611, 621, 631, 641, 6Sl frequency power supply 72, 82 and connect the potential. 6 61 'It is preferably grounded. In addition, the modular plate-shaped electric water source device of the present invention further includes matching regimes 71, 81, which correspond to RF power sources 72, 82, and "Network 82 and induction coils." Between 611, 621, 63i, 64i, 65i, and 6j, the second one is as shown in the figure! 'When the above-mentioned modular plate plasma source device of the present invention is installed in a -plasma processing room', the electric destruction process The chamber is square, and it is used to process substrates such as liquid crystal panels (TFT LCD, TN LCD, STN LCD) or other glass slides (such as FED, EL, etc.). The size of the current 35th generation glass slide is 680x 880 mm2 'and the plasma treatment can be applied to semiconductor processes such as physical vapor deposition, chemical vapor deposition and coin carving; the plasma processing chamber contains at least: a plasma cavity 10, which contains plasma gas · The plasma cavity 10 is provided with several uniform dielectric windows. In this embodiment, there are six dielectric windows 5 1, 5 2, 5 3 54, 55, 56, and each of the dielectric windows 51, 52, 53, 54, 55, 56 'Ο are made of dielectric materials such as quartz or alumina, and each dielectric window is 5 1, 5 2, 5 3, 5 4, 5 The 5, 5 and 6 series correspond to each of the long plate antennas 61, 62, 63, 64, 65, and 66, respectively, for the installation of the above-mentioned plate-shaped plasma source device. An air pump 20 is provided in Denso The cavity 10 is used for decompression to 1 m Torr to 100 Torr, and becomes a pressure suitable for plasma generation, and the pressure is detected by a vacuum gauge 21. A substrate stage 30 is provided in the plasma cavity 10 for To carry the substrate 40.

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一偏壓射頻電源31及一匹配網路32,係連接於式 30’以增加處理時之可控參數。 、土板载口 利用該電漿處理室可均勻以電製處理大尺寸之美 加裝所需之裝置及適當之作業 ^^ 裝ί ;別組式板狀電聚源裝置可模組化 ^ 特別疋可針對液晶方形面板予以處理’此外,备本 發明之模組式板狀電㈣裝置裝詩—電漿處理:由 長板狀天線61、62、63、64、65、66各有其相對之 w電,口 51、52、53、54、55、56,故能將原本需要一大 ^極南成本之介電!|j 口改為數片較小尺寸之較經濟之板形 介電窗口’所以能夠降低成本並容易製造與維護。 在本發明中並不局限如長板狀天線61、62、63、64、 65 : 66及射頻電源72、82等元件之數量,如本發明之電漿 源裝置欲設置於一較小間之處理室以處理小型基板時,如 第4圖所示’可適當地減少為四支長板狀天線6丨、6 2、 ^ 〇 63、64及一射頻電源71,每一板61、62、63、64兩兩柑基. 平行排列,其一端並聯該射頻電源71而另一端並聯至一參 考電位73,因此每管61、62、63、64係可調整間距至所需 適切之電漿均勻度並且可簡便地抽換不同線圈密度之長板 狀天線’所以形成適用於小塑電漿處理室之模組式板狀電 聚源裝置’故可隨著需求增減而不需重新製作。 本發明可在不偏離主要的精神及特徵下以其它不同的形 式實施。因此,上述的較佳實施例只是以舉例的方式被舉 出’且不應將其視為本發明之限制。本發明的範圍是由下A bias RF power source 31 and a matching network 32 are connected to the formula 30 'to increase controllable parameters during processing. The soil plate carrier port can use the plasma processing chamber to uniformly handle the large-sized beauty and install the necessary equipment and appropriate operations by using electrical systems. ^ ^; Other types of plate-shaped electro-polymerization source devices can be modularized ^ Special疋 Can be processed for liquid crystal square panels' In addition, the modular plate-shaped electric device of the present invention is equipped with poem-plasma processing: the long plate-shaped antennas 61, 62, 63, 64, 65, 66 each have their own counterparts. Of the electricity, ports 51, 52, 53, 54, 55, and 56 can use dielectrics that originally required a large ^ polar south cost! | J port is changed to several smaller and more economical plate-shaped dielectric windows ’so that it can reduce costs and be easy to manufacture and maintain. In the present invention, the number of components such as long plate antennas 61, 62, 63, 64, 65:66 and RF power sources 72, 82 are not limited. For example, the plasma source device of the present invention is intended to be installed in a small room. When processing a small substrate in a processing chamber, as shown in FIG. 4, it can be appropriately reduced to four long plate antennas 6 丨, 6 2, ^ 〇63, 64, and an RF power source 71, each plate 61, 62, 63, 64 are two pairs. They are arranged in parallel. One end is connected in parallel to the RF power source 71 and the other end is connected to a reference potential 73. Therefore, the spacing of each tube 61, 62, 63, 64 can be adjusted to the required plasma uniformity. It can easily replace long plate antennas with different coil densities, so it can form a modular plate-shaped electro-polymerization source device that is suitable for small plastic plasma processing chambers. Therefore, it can be re-produced as the demand increases or decreases. The present invention may be implemented in other different forms without departing from the main spirit and characteristics. Therefore, the above-mentioned preferred embodiments are merely mentioned by way of example 'and should not be considered as a limitation of the present invention. The scope of the invention is given by

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C:\Logo-5\Five Continents\PK7347.ptd 第9頁 447035 圖式簡單說明 【圖式說明】 第1圖:一電漿系統内包含本發明之電漿源裝置之剖視 圖; 第2圖:本發明長板狀天線之立體圖; 第3圖:本發明實施例之長板狀天線與射頻電源之電路 連接示意圖;及 第4圖:本發明另一實施例之長板狀天線與射頻電源之 電路連接示意圖。 【圖號說明】 10 電漿腔 20 抽氣幫浦 21 30 基板載台 31 4 0 基板 51〜56_介電窗口 61 、 62 、 63 、 64 、 65 61 1 ' 621、631、641 612 '622 、 632 '642 71 匹配網路 72 81 匹配網路 82 真空計 偏壓射頻電源3 2 匹配網路 66 651 、 661 652 、 662 射頻電源 射頻電源 長板狀天線 感應線圈 本體板 73 參考電位 83 參考電位C: \ Logo-5 \ Five Continents \ PK7347.ptd Page 9 447035 Brief description of the drawings [Illustration of the drawings] Figure 1: A plasma system includes a sectional view of the plasma source device of the present invention; Figure 2: A perspective view of the long plate antenna of the present invention; FIG. 3: a schematic diagram of a circuit connection between the long plate antenna and a radio frequency power source according to the embodiment of the present invention; and FIG. 4: a long plate antenna and a radio frequency power source according to another embodiment of the present invention Circuit connection diagram. [Illustration of drawing number] 10 Plasma cavity 20 Pump pump 21 30 Substrate stage 31 4 0 Substrate 51 ~ 56_ Dielectric window 61, 62, 63, 64, 65 61 1 '621, 631, 641 612' 622 632 '642 71 Matching network 72 81 Matching network 82 Vacuum gauge bias RF power supply 3 2 Matching network 66 651, 661 652, 662 RF power supply RF power supply Long plate antenna Induction coil body plate 73 Reference potential 83 Reference potential

C:\Logo-5\Five Continents\PK7347.ptd 第10頁C: \ Logo-5 \ Five Continents \ PK7347.ptd Page 10

Claims (1)

447〇35 六、申請專利範圍 、—種模組 電漿,該 至少二長 ,每一長 該感應線 至少一射 線圈;及 至少一參 藉由該射 依申請專 ’其中該 接長板狀 依申請專 ’其中該 依申請專 ’其中該 依申請專 ’其中該 電材質所 依申請專 ,其中該 材質所製 —種長板 長板.狀天 式板狀電漿 裝置主要包 板狀天線, 板狀天線包 圈係由本體 頻〔RF〕電 考電位,對 頻電源使感 利範圍第1 射頻電源為 天線之感應 利範圍第1 射頻電源另 利範圍第1 參考電位為 利範圍第1 長板狀天線 製成β 利範圍第1 長板狀天線 成。 狀天線,用 線包含: 源装置’用以在一處理室内產生 含: 其孫相互平行排列而能感應電漿 含本體板及一感應線圈,其中 板之一端斜向纏繞至另一端; 源’以並聯或串聯方式連接感應 應於射 應線圈 項戶斤述 兩組以 線圈。 項所述之模組式板狀電漿源裝置 包含一匹配網路β 項所述之模組式板狀電漿源裴置 接地電位。 項所述之模组式 之本體板係由石 頻電源而連接感應線圈 產生電漿。 之模組式 上,並以 板狀電漿 交錯並聯 源裝置 方式連 板狀電漿 英或氧化 源裝置 鋁之介447〇35 6. Scope of patent application, a kind of module plasma, which is at least two long, each length of the induction wire is at least one ray circle; According to the application, 'where the application is applied', where the application is applied, where the electrical material is based on the application, and the material is made of a kind of long plate and long plate. The sky-shaped plate plasma device mainly includes a plate antenna. The antenna loop of the plate antenna is based on the body frequency [RF] electric test potential. The frequency power source makes the beneficial range the first. The RF power source is the antenna's inductive benefit range. The first RF power source's other beneficial range is the first reference potential. The long plate antenna is made into the first long plate antenna in the beta range. A wire-shaped antenna includes: a source device 'for generating in a processing chamber containing: its grandchildren arranged in parallel to each other and capable of inducing a plasma containing a body plate and an induction coil, wherein one end of the plate is obliquely wound to the other end; the source' Connect the induction in parallel or series to the radio coil. The modular plate plasma source device described in the item includes a matching network β. The modular plate plasma source device is connected to a ground potential. The modular body board described in the item is connected to the induction coil by a rock power source to generate plasma. The module type is connected to the plate-shaped plasma staggered parallel source device in the form of plate-shaped plasma. 項所述之模组式 之本體板係含鐵 板狀電漿 、钻或鎳 源裝置 之導磁 以連接射頻電源以感應電漿,該The modular body board mentioned in the item is iron-containing plate-shaped plasma, drill or nickel. The magnetic permeability of the source device is connected to the RF power source to induce the plasma. C:\Logo-5\Five C〇ntinents\PK7347.ptd 第11頁 447〇35 六 10 11 12 申請專利範園 -感:ί圈係::英或氧化紹之介電質所製成;及 。*’ '·、 ,/、糸由本體板之一端斜向纏繞至另一端8、—種電漿處理室,用 -電裝腔,内含電=理基板,其至少包含; 窗口,其中該介電窗口 #八°亥電漿腔設有數板狀介電 -基板載台,設於電電材質所製成; 一拙氣幫浦,設於電漿 用以承戴基板,· 一模組式板狀電漿源裝^用以抽氣減壓,· 線、至少一射頻電源及至w’、主要包含至少二長板狀天 狀天線係相互平行排列二〜參考電位,其中該長板 而能感應電漿,每—長 f應於電漿腔之介電窗口, 應線圈,而該感應線圈==天線包含一本體板及一感 另二端,該射頻電源以並本體板之一端斜向纏繞至 上邊參考電位對應於射 ♦或串聯方式連接感應線圈 。亥射頰電源使感應線圈包源而連接感應線圈,藉由 、依申請專利範圍第8 生電漿 m 頻電源為兩組以.上,並以,之電漿處理室,其中該射 線之感應線圈。 父錯並聯方式連接長板狀天 、依申請專利範圍第8項 頻電源另包含一匹配網路。〔之電漿處理室,其中該射 、依申請專利範圍第8項所; 考電位為接地電位, 之·電紫處理室,其中該參 、依申請專利範圍第8項/ _ I之電漿處理室,其中該長C: \ Logo-5 \ Five C〇ntinents \ PK7347.ptd Page 11 447〇35 6 10 11 12 Patent Application Families-Sense: 圈 Circle System: made of dielectric materials such as English or oxide; and . * '' ,,,,,, and 糸 are obliquely wound from one end of the body plate to the other end 8. A type of plasma processing chamber, with an electrical installation cavity, which contains electricity = a physical substrate, which contains at least; a window, where the Dielectric window # 八 ° 海 Plasma cavity is equipped with several plate-shaped dielectric-substrate carriers, which are made of electro-electric material; a gas pump is installed in the plasma to support the substrate, a modular type The plate-shaped plasma source device is used to extract air and reduce pressure. · The line, at least one radio frequency power source and w ', mainly include at least two long plate-shaped antennas arranged in parallel with each other from two to a reference potential. The long plate can Induction plasma, each-length f should be in the dielectric window of the plasma cavity, and the coil should be, and the induction coil == the antenna includes a body plate and an inductive other two ends, and the RF power source is inclined obliquely to one end of the body plate. Winding to the upper reference potential corresponds to the ♦ or series connection of the induction coil. The helium buccal power source connects the induction coil to the induction coil. According to the eighth generation of the patent application, the m-frequency power source of the plasma is two or more, and the plasma processing room, in which the radiation induction Coil. The father-in-parallel connection is used to connect the long plate-shaped antenna. According to the eighth patent application, the frequency power supply also includes a matching network. [The plasma processing room, where the radio and plasma according to item 8 of the scope of the patent application; the test potential is the ground potential, and the electric purple processing room, where the reference and the plasma area of the patent application, item 8 / _ I's plasma Processing room where the long C:\Logo-5\Five Continents\PK7347.ptd 44703S 六、申請專利範圍板狀天線之本體板係由石英或氧化銘之介電質所製成 1 利範圍第8項所述之電漿處理室,其中該長 板狀天線之本體板係由鐵、鈷或鎳之導磁材質所製成 =申β專利範圍第8項所述之電漿處理室,其中該電 漿處理室另包含—偏壓射頻電源,而該電源係 基板載台。 、 依申請專利範圍第1 4項所述之電漿處理室 歷射頻電源另包含一匹配網路。 依申請專利範圍第8項所述之電漿處理室 黎·腔係為方塊形.,用以處理液晶平面玻板。 一種處理方形基板之電漿源模組,其主要包含數個繞 有感應線圈之長板狀天線及至少一射頻電源,其中該 長板狀天線之相互平行排列係對應於該方形基板。 依申請專利範圍第1 7項所述之電漿源模組,其中每 長板狀天線係.對應於電漿腔之板形介電窗口。 依申請專利範圍第1 7或1 8項所述之電漿源模蚯,其中 該方形基板為玻璃基板。 依申請專利範圍第1 9項所述之電漿源模組,其中該玻 璃基板為液晶面板。 14 15 16 17 18 19 20C: \ Logo-5 \ Five Continents \ PK7347.ptd 44703S 6. The scope of patent application The antenna plate of the plate antenna is made of quartz or oxidized dielectric materials. Room, where the body of the long plate antenna is made of a magnetically conductive material of iron, cobalt, or nickel = the plasma processing room described in item 8 of the patent β scope, wherein the plasma processing room further includes- A biased RF power supply, which is a substrate stage. The RF power supply according to the plasma processing room described in item 14 of the scope of patent application also includes a matching network. The plasma processing chamber according to item 8 of the scope of the patent application, the cavity of the plasma processing chamber is square, and is used to process liquid crystal flat glass panels. The utility model relates to a plasma source module for processing a square substrate, which mainly comprises a plurality of long plate antennas wound with an induction coil and at least one radio frequency power source, wherein the parallel arrangement of the long plate antennas corresponds to the square substrate. The plasma source module according to item 17 of the scope of the patent application, wherein each long plate antenna is a plate-shaped dielectric window corresponding to the plasma cavity. The plasma source mold according to item 17 or 18 of the scope of the patent application, wherein the square substrate is a glass substrate. The plasma source module according to item 19 of the patent application scope, wherein the glass substrate is a liquid crystal panel. 14 15 16 17 18 19 20 其中該偏 其中該電Which the partial which the electric
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103572241A (en) * 2012-07-23 2014-02-12 余端仁 Inductive coupling type plasma processing apparatus
TWI594668B (en) * 2012-02-07 2017-08-01 Tokyo Electron Ltd Inductively coupled plasma antenna element, inductively coupled plasma processing device and inductively coupled plasma processing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI594668B (en) * 2012-02-07 2017-08-01 Tokyo Electron Ltd Inductively coupled plasma antenna element, inductively coupled plasma processing device and inductively coupled plasma processing method
CN103572241A (en) * 2012-07-23 2014-02-12 余端仁 Inductive coupling type plasma processing apparatus

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