CN101194207B - Environmental control in a reticle SMIF pod - Google Patents

Environmental control in a reticle SMIF pod Download PDF

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Publication number
CN101194207B
CN101194207B CN200680011202XA CN200680011202A CN101194207B CN 101194207 B CN101194207 B CN 101194207B CN 200680011202X A CN200680011202X A CN 200680011202XA CN 200680011202 A CN200680011202 A CN 200680011202A CN 101194207 B CN101194207 B CN 101194207B
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graticule
filter
area
box
gas
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CN101194207A (en
Inventor
大卫·L·哈尔布迈尔
安托尼·辛普森
威廉·M·古德温
奥列格·P·基什科维奇
汤姆·基尔巴索
弗兰克·曼加涅洛
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Entegris Inc
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Entegris Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/12—Washers with plural different washing sections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D50/00—Combinations of methods or devices for separating particles from gases or vapours
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67353—Closed carriers specially adapted for a single substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67386—Closed carriers characterised by the construction of the closed carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

The present invention provides a standardized mechanical interface (SMIF) reticle pod that is configured to provide a controlled environment for supporting a reticle wherein the controlled environment is maintained substantially free of crystal growth causing contaminants. Accordingly, there is provided a layered filter with filter elements capable of filtering particulates and adsorbing gaseous contaminants. The filter has an inwardly facing face generally planar shaped with a surface area that is substantially half or more of the area of the reticle face. The inwardly facing face is placed in close proximity to the reticle patterned surface and has an area that is a significant fraction of the reticle patterned surface area. The SMEF pod is also provided with a purge system configured to inject a very dry gas within the controlled environment to flush the controlled environment of contaminants as well as to regenerate the filter.

Description

Environment control in the graticule SMIF box
Related application
The application requires the U.S. Provisional Application No.60/668 of submission on April 4th, 2005, and 189 right of priority is incorporated its integral body into this paper by reference.
Technical field
The application relates to and is used for SMIF (SMIF) substrate carrier that semiconductor is made, but more specifically relate to transportable and graticule (reticle)/photomask carrier shipping, described carrier comprises that filtering system is with chemistry in the controlled environment that reduces this carrier and particulate pollutant.
Background technology
The processing that is used for the silicon wafer of semiconductor application generally includes the photoetching process as one of operation.In photoetching process, sensitive liquid polymkeric substance or photoresist are coated on the wafer surface that deposits silicon nitride, utilize template optionally to make it be exposed to radiation source then with required pattern.Usually, ultraviolet light sees through or reflects the surface of leaving mask or graticule, on the wafer that required pattern is projected the photoresist covering.The photoresist part of exposure is by chemical modification, and contacts subsequently when being used to remove the chemical mediator of unexposed photoresist when wafer, and unaffected and photoresist modification of the photoresist part of exposure is stayed on the wafer with the accurate shape of pattern on the mask.Wafer is carried out etching process, remove the expose portion of nitride layer, so that nitride pattern is stayed on the wafer with the accurate design of mask.
Industry trends is to produce chip littler and/or that have higher logic density, promptly needs on bigger wafer even littler live width.The degree that the fineness on graticule surface that obviously, can patterning and this pattern can be replicated on the wafer surface strictly according to the facts is the factor of the final semiconductor product quality of influence.The resolution that can copy to the pattern on the wafer surface depends on used ultraviolet light wavelength, and described ultraviolet light is used for pattern is projected the surface of the wafer of photoresist covering.The lithography tool of prior art uses the deep UV (ultraviolet light) of wavelength as 193nm, and it allows the minimum feature size of about 100nm.The instrument of developing at present uses extreme ultraviolet (EUV) light of 157nm, with the feature resolution of tolerable size less than 70nm.Graticule is very flat glass plate, and it comprises the pattern that will be copied on the wafer.Typical reticle substrate material is quartzy.Because the microsize of the key element of modern integrated circuits, the working surface that therefore must make graticule (promptly, patterned surface) avoids pollutant, described pollutant may damage described surface or make the anamorphose that projects on the photoresist layer in process, cause the unacceptable final products of quality.When EUV was photoetching process a part of, the critical particle size of non-patterning and patterned surface was respectively 0.1 μ m and 0.03 μ m usually.Usually, the patterned surface of graticule is coated with film thin, printing opacity, is preferably nitrocellulose, and it attaches to framework and supports by framework, and attaches on the graticule.Its objective is that seal out contaminants and minimizing are by this type of pollutes the potential printing defects that causes in the image plane.Yet opposite with the transmission of the photolithographic feature graticule of deep UV (ultraviolet light), EUV extremely far away utilizes the reflection of patterned surface.At this moment, this technology does not provide EUV clear films material.Therefore, the photomasks that adopts in the EUV photoetching process (graticule) is easy to be polluted and damage, and its degree used graticule in the conventional photoetching process.This situation has applied the functional requirement that improves for any graticule SMIF box of the graticule that is used for the EUV photolithography use that is designed for storage, transportation and shipping.
Well-known in the artly be, in manufacturing, processing, shipping, processing, transportation or storage process, graticule causes the damage of the accurate feature on the patterned surface of graticule with unnecessary and unintentional contact the on other surface with may and wearing and tearing owing to sliding friction.Similarly, the viewpoint that those skilled in the art usually accept is, any particulate pollutant on graticule surface can potential damage graticule to the degree of the final products that are enough to have a strong impact on the technology of using this defective graticule.For this reason, the new method of locating and support graticule in reticle container (container) has been developed in this area, so that reduce or eliminate the sliding friction of graticule and wearing and tearing subsequently and produced pollution particle.Have recognized the need in storage, processing and transportation, around wafer, keep controlled environment; prior art has been developed the method for isolation technology; it can protect described wafer to avoid the invasion and attack of particulate matter relatively by container is provided to allow the environment of control next-door neighbour wafer, to make.Usually container has SMIF, and it allows container by the processing equipment automation mechanized operation.This container can hold the photomask of 200mm at the most and be called as the SMIF box or the SMIF box.Even have such controlled environment, but, still may cause to exist particle to move in controlled environment inside owing to the pressure variation that is trapped in the air in the controlled environment or owing to the container rapid movement and/or owing to upset the caused entrapped air disorder of entrapped air volume.For example, cause the entrapped air of controlled environment inside to move, cause thin-walled SMIF box can experience the wall motion because the relevant pressure of sea level elevation changes.Temperature variation may produce convection current in container.Because the container that pressure surge causes and the change in size of part thereof may cause lid and the seals damaged between the door and the invasion and attack of the particle in the carrier of carrier.The method of prior art is considered externally between the environment and inner air controlled volume air-breather to be set.This air-breather provides inlet air flow path.The air-breather of prior art can comprise particulate filter, enters into the controlled environment of carrier with the particle that stops external environment condition.
It will be understood to those of skill in the art that particulate pollutant only is half of problem.Because surrounding air feeds or infiltrate or be trapped in the gas-tight seal system, thereby it is also important that vapor phase contaminants or gas-carrying molecule pollutant (AMC).For example, under suitable dewpoint temperature, airborne aqueous vapor will condense from the air, and its part can deposit on the graticule.Even have splendid airtight container, when in process, in container, shifting out and replacing graticule, also may make air enter into system.The water vapour that is condensate on the patterned surface of graticule can disturb optical device as solid particle.Other gas phase or vapor contamination are the chemical reagent that produce in the solvent residues that is produced by graticule/box clean operation during the photomask life cycle, by the constitutional detail degassing of carrier and enter into the chemical reagent of carrier by destroying the sealing arrangement between carrier shell and the carrier door from ambient atmosphere.Think that multiple polluter is the largest source of vapor phase contaminants.These polluters comprise NH 3(ammonia), SO 2(sulphuric dioxide), H 2O (water) and condensable C 6～C 10Organism.According to etching system, photomask can be exposed to wavelength can be the LASER Light Source of 436nm～157nm.At present, the laser of 193nm is quite general.The energy of laser can cause the chemical reaction that promotes that the lip-deep defective of graticule forms and spreads.For example, some chemical substance can be changed to form high reaction activity material, for example SO 4 2-And NH 4 +In these chemical substances some, for example acid, thus also can produce cloud point on patterned surface by etching glass damages graticule with glass reaction.Alkali can make resist poison.Condensable organism can cause the formation of SiC.Usually, think that all contaminants all can cause same result: make the crystal growth of graticule function reduction.Aspect this, popular viewpoint is that aqueous vapor or water are one of required key components of crystal growth.Basically, water combines the salt that forms and flocks together under the crystal growth of routine usually with the above-mentioned pollutant of part.Prior art is for example used drying agent, but can not improve this problem, because they can not drop to the concentration of aqueous vapor enough low level, to prevent the formation of salt (or crystal).Similarly, clean the graticule carrier with clean dry air (CDA) or other dry gas and also aqueous vapor concentration can not be reduced to the level of avoiding crystal growth required.Therefore, all need pollution control device in each stage of reticle life cycle.
One of method of improving the chemical pollutant influence that adopt usually this area is regular reticle/mask cleaning.Described broom closet can be about 8000 wafers in the approaching for example exposure tool at 193nm every averaging time (MTBC).The ultimate value of MTBC is set to the interval averaging time (MTBD) that prevents to use reticle/mask to print defective occurs on wafer.But reticle/mask number of times of described " cleaning " that can stand before resolution drops to invalid and mask must be abandoned is limited.According to above, one of skill in the art will recognize that in storage, transportation, operating process and during the dormant state when carrier does not have graticule, need guarantee that the graticule environment in the carrier keeps clean.Though expectation, it is normally infeasible to make up the sealed environment that allows AMC or other pollutant to invade anything but.Especially when graticule and graticule carrier were had to transportation or shipping, continuous wash graticule carrier also was infeasible.
The structure or the device that need a certain type to guarantee that intrusion, concentration and the cumulative percentage of the AMC in the photomask carrier are controlled to the level of avoiding or reducing crystal salt formation significantly, make the serviceable life that can prolong photomask significantly.
Summary of the invention
The invention provides a kind of reticle/mask carrier, in storage, transportation, processing and shipping process, in described carrier, hold graticule with controlled environment.According to a basic embodiment of the present invention, the device that described reticle/mask carrier is equipped with control particle and vapor phase contaminants to enter controlled environment and accumulate therein.
According to an aspect of the present invention, the graticule carrier has plain filter, and described filtrator has layout to form the particular filter element of composite intermediate layer.Each filtering element is associated with particular medium, and described medium is characterised in that its selectivity catches at least a ability in several trace impurities, described impurity is known is present in or the known seal cavity that is diffused in the graticule carrier in.
According to a further aspect in the invention, select and the weak filter medium that combines of pollutant, make and by making filtrator stand flow of pressurized gas pollutant to be discharged from filtrator, thereby make filter regeneration.
According to related embodiment of the present invention, shape, size and the position of filtrator are set, so that present the surface on the patterned surface that particle will preferentially stop thereon rather than rest on graticule.The serious offense of the concern on the other hand filter of alternative embodiment, it is six ten at least percent filtrator of at least one big surface surface area of being preferably patterned surface, to utilize the diffusion length of particle in container, make particle preferentially rest on the filtrator rather than rest on the patterned surface of graticule.According to basic embodiment on the other hand, the shape and size that filtrator preferably is set are proportional with graticule basically, and its optimum seeking site is set to basic concentric with graticule.In aspect of this embodiment, make at least one surface of filtrator be positioned at the carrier door section substantially, and graticule is positioned on the graticule support.
According to related embodiment, compare with the gas-tight seal interior volume in the graticule carrier, the invention provides and be used to limit the method that filter medium is exposed to the outside of reticle pod.The one side of described method comprises provides the perforated disc that is used for keeping filtrator, and wherein said perforation has limited area, and filtrator is communicated with external environment condition by described perforation.Comprising on the other hand of described method provides the filtrator with other fluid impermeable layer, and described layer has unidirectional slit valve in case stop ring border air is communicated with gas-tight seal space within the graticule carrier.The cleaning port that is included on the one hand again of described method provides non-return valve, enters the gas-tight seal space to prevent pollutant.
According to another basic embodiment of the present invention, the graticule carrier have with pressurization, extremely clean dry air (being called XCDA) is injected into the device in the gas-tight seal space of graticule carrier and discharges the device of described XCDA from described gas-tight seal space.Cleaning gas is fully pressurizeed, discharge by filtrator and exhaust apparatus to allow gas.Clean the gas-tight seal space by this way in order to rinsing out pollutant and to make filtrator and graticule carrier drying, thereby make filter regeneration.
Other purpose of the present invention, advantage and novel feature part are in the following description illustrated, and part can it will be apparent to those skilled in the art or can understand by practice of the present invention by studying hereinafter.Can realize and obtain objects and advantages of the present invention by means and the combination of in claims, pointing out especially.
Description of drawings
Fig. 1 is the bottom perspective view of assembly of the graticule carrier of the basic embodiment according to the present invention.
Fig. 2 is the decomposition diagram according to the assembly of the graticule carrier of basic embodiment of the present invention.
Fig. 3 is the skeleton view of base part of graticule carrier that is used for supporting graticule as shown in Figure 1.
Fig. 4 is the bottom perspective view of base part of the graticule carrier of Fig. 3.
Fig. 5 is the planimetric map of the base part of Fig. 3.
Fig. 6 is the side sectional view that passes through section B-B of the base part of Fig. 5.
Fig. 7 is the partial enlarged drawing that the cleaning port of Fig. 6 is shown.
Fig. 8 is the side sectional view that passes through section A-A of the base part of Fig. 5.
Fig. 9 is another partial enlarged drawing that the cleaning port of Fig. 8 is shown.
Figure 10 is the bottom perspective view of upwards observing cover that alternative embodiment illustrates the cover inside surface according to the present invention.
Figure 11 is the skeleton view according to exemplary filter of the present invention.
Figure 12 is the skeleton view of the high surface filtrator of the less important embodiment according to the present invention.
Embodiment
Accompanying drawing has been described embodiment and the feature and the part of graticule carrier of the present invention.Preceding and back, a right and left side, top and bottom, upper and lower, level to be easy in order describing with vertical quoting, rather than to limit the present invention or its part is limited in any one position or spatial orientation.The arbitrary dimension of appointment can change with the intended purpose of potential design and embodiment of the present invention in accompanying drawing and this instructions, and does not deviate from scope of the present invention.
In Fig. 1～11, the graticule carrier 100 that is equipped with the chemical filtering system of the basic embodiment according to the present invention is shown.Described graticule carrier 100 (being also referred to as reticle container, reticle pod or graticule case) generally includes door section 106 (being also referred to as base portion), it cooperates the seal cavity 118 that sealed environment is provided with formation with carrier shell 112 (being also referred to as lid), and graticule 124 can be stored in described sealed environment and shift.Used term " graticule " broadly comprises and is used for quartzy base, photomask, mask semi-conductor industry, that be easy to be subjected to particle and the damage of gas chemistry pollutant.Graticule 124 is normally foursquare, has first surface 126, second patterned surface 128, the second patterned surfaces 128 relative with it comprise the surface area 129 with above-mentioned etched pattern.Reticle lateral surface 130 is separated the first surface 126 and second patterned surface 128, and extends around reticle perimeter 130.Should be appreciated that, the invention is not restricted to the concrete shape of graticule 124.
The best is shown in Fig. 2,4 and comprises relative upper door surface 136 and surface, Xiamen 142 with 5 door section 106, and it by sidewall 148 separately.A plurality of graticule supports 154, graticule side align member 160 and back align member 166 are protruding from upper door surface 136, and periphery 172 on the upper door surface 136 near and usually dispose around the core 178 of upper door surface 136 with spaced relationship.Graticule support 154 is configured to graticule 124 is remained on predetermined altitude 156 top of upper door surface 136.Graticule side align member 160 and back align member 166 are used to guide the manual positioning of graticule 124, and guarantee graticule on graticule support 154 suitable side and the rear arranges so that graticule occupies graticule housing region 168 substantially and its volume is limited with door section 106 restrictions and by graticule support 154, graticule side align member 160 and back align member 166 by graticule housing region 168, shown in Figure 3 as the best.Liner 184 172 one-tenth rings of last periphery on the door surface 136.Preferred door section 106 and carrier shell 112 are complementary with the shape of graticule 124.
Referring now to Fig. 2,3 and 4, door section 106 has center pit 190, its run through door section 106 and by first opening 196 on the upper door surface 136, on surface, Xiamen 142 second opening 202 and first opening 196 is limited with the internal perisporium 208 that second opening 202 is communicated with.In exemplary, shown in Fig. 2,3 and 4, first and second openings 196 and 202 are foursquare substantially, and it is characterized in that their first and second areas 212 and 214 separately.The sidewall 148 that internal perisporium 208 between first and second openings 196 and 202 is parallel to door section 106 usually extends.Internal perisporium 208 is provided with outer chow scheme 220, and it is suitable for firm support filter frame 226, makes filter frame 226 be basically perpendicular to first opening 196 and flushes with upper door surface 136 usually.
Be shown in the embodiment of Fig. 2 in the best, filter frame 226 can be semirigid, molded plastic container, wherein can use according to filtrator 232 of the present invention.Filter frame 226 is the cap shape substantially, has the outer peripheral flange 242 (or being called antelabium) around openend 248, and filter frame side wall 258 hangs down and stops at blind end 252 from openend 248, to limit the chamber 262 that is fit to hold filtrator 232.Blind end 252 has the structure that limits a plurality of perforation 264, and the best as shown in Figure 4.Filter frame side wall 258 comprises shoulder 268, and it has the shape with outer chow scheme 220 complementations on internal perisporium 208.Filter frame is configured to embed and identical being contained in the center pit 190 by first opening 196 on the upper door surface 136, and utilization is arranged in the flange 242 on the upper door surface 136 and the shoulder 268 that is positioned at securely on the outer chow scheme 220 of internal perisporium 208 is removably mounted on door section 106.In alternative embodiment, for example above-mentioned liner 184 of elastic sealing element or liner can be inserted between shoulder 268 and the outer chow scheme 220, to provide gas-tight seal between filter frame 226 and filtrator 232.
With reference to the diagram of Fig. 2 and 12 filtrator 232 is described below.Filtrator 232 can have multiple structure, that every kind of structure all provides is fluid permeable, clean, cost-effective, efficiently, the complex filter of low pressure drop, adsorbability, for example in U.S. patent No.7,014,693,6,761,753,6,610,128 and 6, the filtrator of record in 447,584, its full content is incorporated this paper by reference into.Fig. 2 and 12 illustrates the exemplary of filtrator 232.Filtrator 232 it is desirable to the filtrator of fluid permeable, and it can comprise the medium of the absorption and the non-absorption of several types.Adsorbing medium can comprise for example chemical adsorption medium and physisorption medium.Non-adsorbing medium can comprise the medium of impermeable particle.It will be understood to those of skill in the art that adsorbing medium can be processed into and has the aperture that is used to remove particulate matter.This adsorbing medium also is the example according to the medium of impermeable particle of the present invention.Every type medium can be in independent filtering element.Term " physisorption " is meant reversible absorption processes, and wherein absorbate keeps by weak physical force.On the contrary, term " chemisorption " is meant irreversible chemical reaction process, wherein forms chemical bond between gas or fluid molecule and solid surface.Term " impermeable particle " be meant from flowing through fluid permeable but the fluid of the medium of impermeable particle the basic filtering size greater than the characteristic of the particle of threshold size.Usually, can from the medium of each impermeable particle, expel particle, recover the particle filtration capacity of medium thus substantially by making reverse fluid flow.With reference to Fig. 2, exemplary filter 232 according to the present invention comprises a plurality of removable or interchangeable filtering elements (perhaps being called layer, parts or lamina), and its form with the layer of predetermined series is arranged in parallel.Exemplary filtrator 232 comprises the overlayer 282 of the medium of second filtering membrane 280 of first filtering membrane 278, second adsorbing medium of basic unit 276, first adsorbing medium of the medium of the first impermeable particle and the second impermeable particle, and adsorbing medium layer 278 and 280 is clipped between the basic unit 276 and overlayer 282 of medium of impermeable particle.In a basic embodiment, basic unit 276 and overlayer 282 can comprise and for example filter nonwoven polyester, polyamide or polypropylene material or other similar material, and its configuration is used for removing particulate matter at fluid stream.Other particulate filter medium, for example high-efficient granule air (HEPA) filter medium or ultra-low penetration air (ULPA) filter medium also can be used alone or in combination, and not deviate from scope of the present invention.Basic unit and overlayer 276 and 282 prevent that particle from invading gas-tight seal space 118 and preventing that particle from draining into the ambient atmosphere from gas-tight seal space 118 from ambient atmosphere (for example, from the toilet).In a preferred embodiment of the invention, first adsorbing medium is first physisorption media together with first filtering membrane 278.Term used herein " untreated " is meant the acticarbon without the chemical treatment modification of carrying out chemisorption; Untreated acticarbon also remains physics, nonpolar adsorbent.Shown in Fig. 2 and 12, the first physisorption filtering element 278 can comprise untreated acticarbon.Described carbon is that (specific surface area can be about 1000m to porous 2/ g) also can provide with fiber or the particle form of introducing in weaving or the nonwoven polymer fibre mat.Untreated acticarbon can be formed by multiple source, comprises coconut husk, coal, timber, pitch and other organic source.Further, the sulfonated copolymer coating can be attached on the untreated acticarbon.The medium of filtering membrane 278 can comprise other material, for example granular activated charcoal, pearl acticarbon, chemical impregnation carbon, chemical impregnation acticarbon, zeolite, Zeo-karb, anion exchange resins, cation exchange fibre, anion-exchange fibre, activated carbon fiber and chemical impregnation activated carbon fiber.The physical adsorbability medium of layer 278 is specifically removed acid, organic and inorganic condensable pollutant for example C6～C10 and SO 2Gas.This medium for example by Purolyte Corporation with trade (brand) name
Figure G200680011202XD00081
Sell.Second filtering membrane 280 is strong-acid ion exchange resins of second adsorbing medium, and described second adsorbing medium is the sulfonated divinylbenzene styrol copolymer of micropore pearl form for example.Second adsorbing medium is configured to specific catching from the gas-tight seal space 118 and from the ammonia (NH of clean room environment atmosphere 4) and aqueous vapor (H 2O).This medium by Rohm and Haas with trade (brand) name
Figure G200680011202XD00082
15DRY or
Figure G200680011202XD00083
35DRY sells.Outside above-mentioned scope, can also use catalyzer with physical characteristics.Basic unit 276 and overlayer 282 also can be used for keeping the granular or fine-grannular medium in adsorbed layer 278 and 280.It will be recognized by those skilled in the art the number, layer that can advantageously the utilize layer arrangement and the various combinations of cambial media type and do not deviate from scope of the present invention relative to each other.For example, in alternative embodiment of the present invention, can use chemisorption and physisorption filtering element.Can adjust the relative thickness of chemisorption filtering element and physisorption filtering element, make that will exhaust approximately simultaneously the serviceable life of two kinds of filtering elements in designated environment.Therefore, the chemisorption filtering element that is formed by sulfonated polymer can be made to such an extent that to handle the physisorption filtering element that carbon forms than origin thinner, because the physical adsorption characteristic of carbon consumes sooner than the chemisorption characteristic of acidity, sulfonated polymer usually.In a different embodiment, physisorption and chemical adsorption medium may reside in the same filtering layer.In another embodiment, various filter element can sequentially be bearing in the frame container (not shown) so that multistage filter to be provided, air can along perpendicular to the direction of each layer by described multistage filter.After the filtration capacity of described multistage filter exhausted, it can be substituted by integral body.As selection, as disclosed in the prior art, in Figure 13, can prepare filtering element as each medium of three-dimensional element combination array by forming with high surface 338.The filtrator of this high surface 338 can form by making the pleating accordion shape structure that becomes of medium.The pre-filtering layer (not shown) of hydrophilic media can be attached in the basic unit 276 of overlayer 282, described pre-filtering layer filtrator 232 relatively is removable independently.
Still with reference to Fig. 2, layer 276,278,280 and 282 preferably has identical shaped 287.All these layers have the identical table area 288 that the periphery 289 by shape 287 limits, but can have different thickness.Under assembled condition, several layers 276,278,280 and 282 sequentially are configured in the chamber 262 of filter frame 226, have the multistage filter of the composite sandwich structural of thickness 290 with formation.Filter frame 226 embeds and utilizes flange 242 that is retained on the upper door surface 136 and the shoulder 268 that is bearing on the outer chow scheme 220 to be releasably attached in the center pit 190 by first opening 196 on the upper door surface 136.In related embodiment, filter frame 226 and filtrator 232 comprise tube 270, and tube 270 can be inserted in the center pit 190 on the upper door surface 136 of door section 106 and can remove, as U.S. patent No.6, shown in 319,297, its full content is incorporated this paper by reference into.
In a basic embodiment of the present invention, illustrate according to Fig. 2,3 and 5 that preferably first area 212 of first opening 196 is configured to basically with the surface area 129 of second patterned surface 128 of graticule 124 proportional.An aspect according to particular, first area 212 is at least 50% of surface areas, and in another embodiment, described surface area is six ten (60%) at least percent of a surface area 129, preferred surface long-pending 129 75 (75%) percent to absolutely (100%).In a preferred embodiment of the invention, first area 212 is basic concentric with graticule housing region 168.In addition, the position of first opening 196 and graticule support 154 is set, make in assembling structure, promptly cooperate with door section 106 and graticule 124 when being bearing on the graticule support 154 when carrier shell 112, the surface area 288 to small part second patterned surface 128 positioned opposite in utilization and the gas-tight seal space 118 comes localization filter 232, makes reticle perimeter 130 covering surfaces amass 288 periphery 289.It will be recognized by those skilled in the art that the surface area 288 and second patterned surface 128 can be other operative configuration, and do not deviate from scope of the present invention.Other condition that part may run into during keeping in graticule carrier 100 based on the size in gas-tight seal space 118, the diffusion length that produces in the cleaning of graticule carrier, graticule processing, transportation, shipping and storage process and graticule 124, but all above-mentioned operative configuration selected so that the scope maximum of surface area 288 relative second patterned surfaces 128.Surface area 288 is provided with near second patterned surface 128.By zone and position, can make the particle that is present in the gas-tight seal space 118 and enters gas-tight seal space 118 preferentially meet with and rest on the surface 288 rather than be diffused into possibilities maximization on second patterned surface 128 with mode option table area 288 of the present invention.For those skilled in the art, the representative of the scope of surface area 288 can be used for making fluid to enter the sum of the fluid passage of filtrator 232.The term " high surface " that is associated with Reference numeral 338 is meant on the other hand when fluid flows through the whole thickness 290 of filtrator 232, the effective surface area of the total filter medium that can be used for filtering.The absorption of effective surface area pilot-gas and chemical reaction.Aspect this, filtrator 232 is with the difference of the SMIF box filtrator of prior art: filtrator 232 of the present invention structurally is the important component of door section 106, because surface 288 can cover on the major part on the surface 136 of calling.In addition, shown in Figure 4 as the best, in assembling structure, basic unit 276 is positioned on the blind end 252, so that filtrator 232 makes gas-tight seal space 118 be communicated with reticle pod 100 ambient atmosphere fluid outward by a plurality of perforation 264.
Basic embodiment of the present invention is provided for limiting the device that other medium that filter medium 276,278,280,282 and filtrator 232 can comprise is exposed to the ambient atmosphere of graticule carrier 100 outsides.Such device is for example shown in Fig. 2 and 4.The scope that it will be understood to those of skill in the art that the surface 288 of the filtrator 232 that is communicated with gas-tight seal space 118 fluids in the graticule carrier 100 is maximized usually, as mentioned above.But because the limited area 266 of a limited number of perforation 264 and each perforation, the basic unit 276 of filtrator 232 is much smaller with the direct scope that is communicated with of ambient atmosphere.Another device provided by the invention comprises the film 360 of impermeable fluid, its blind end 252 under the basic unit 276.When pressurize under cleaning model in box inside, the criss-cross slit (not shown) of cutting angularly in fluid impermeable film 360 axially enlarges the slotted section of fluid impermeable film, and then opens preferred and the 264 relative described slits of boring a hole.Box does not add vacuum usually, so slotted section can inwardly not opened the outside valid function of a plurality of retaining valves when only flowing out graticule carrier 100 as fluid.At U.S. patent No.5, put down in writing similar valve in 482,161, its full content is incorporated this paper by reference into.In addition, adventitia 360 can be a hydrophobic film, invades in the graticule carrier 100 by filtrator 232 from the aqueous vapor of ambient atmosphere preventing.When the SMIF box pressurized providing by filtrator when significantly outwards flowing, hydrophobic property may be pressed and allow air or cleaning gas with and the aqueous vapor of carrying leave.By under the static minimum influx and discharge of filtrator, wish that hydrophobic effect reduces flowing from the air that carries aqueous vapor of external-to-internal effectively.
According to basic embodiment of the present invention, the aqueous vapor concentration in the gas-tight seal space 118 is preferably maintained in the range of from about parts per billion part (ppb).Use existing method for example during drying agent, the aqueous vapor concentration in the gas-tight seal space 118 only can be controlled at parts per million (ppm) part (ppm).By reticle pod 100 is connected to regularly make very dry gas for example drying nitrogen or the dry argon gas purging system that flows through gas-tight seal space 118 realize the level of humidity control.Referring now to Fig. 2,6～9, equipment of basic embodiment is used to connect the structure of the reticle structure 100 of purging system (not shown) according to the present invention shown in it.As shown in Figure 2, the last periphery 172 of door section 106 disposes syringe and extractor port 306 and 312, and extractor port 306 and 312 extends through door section 106 between upper door surface 136 and the surface, Xiamen 142 along the direction that is parallel to the sidewall 148 of door section 106 usually.Syringe ports 306 and extractor port 312 are configured to coaxial accommodate syringe adapter 318 and extractor fittings 324.Syringe and extractor fittings 318,324 can be threaded onto syringe and extractor port 306 and 312 respectively.Can use other coupling arrangement and not deviate from scope of the present invention.Syringe adapter 318 is detachably connected to the admission line (not shown).Extractor fittings 324 is detachably connected to the exhaust line (not shown), and it can be connected to the exhaust apparatus (not shown) successively.Each syringe adapter 318 and extractor fittings 324 are equipped with non-return valve 330, and non-return valve 330 is configured to allow way flow to cross and prevent when system does not use that gaseous state or particulate contaminant enter or leave gas-tight seal space 118.Diaphragm valve with slit is for example at above referenced U.S. patent No.5, in 482,161 record those can together with or different non-return valve 330 use.This is to be used to limit the mechanical hook-up that other medium that filter medium 276,278,280,282 and filtrator 232 can comprise is exposed to the ambient atmosphere of graticule carrier 100 outsides.It will be recognized by those skilled in the art that will be very under pressure dry cleaning gas for example drying nitrogen and dry argon gas is injected into and will causes in the gas-tight seal space 118 coming out by filtrator 232 and coming out to enter atmospheric environment by blind end 252 to the small part cleaning gas.At U.S. patent No.5, put down in writing the apparatus and method of cleaning graticule carrier 100 in 988,233 and U.S. patent No.5,810,062, the full content of described two patents is incorporated this paper by reference into.In alternative embodiment, extractor fittings 324 is substituted by the syringe adapter 318 that is connected to the gas access.In this structure, pressurize by the cleaning gas that syringe adapter 318 flows into wherein in gas-tight seal space 118.Cleaning gas leaves hermetic closed space 118 by filtrator 232.Clean hermetic closed space 118 and remove contaminant trace species by in air-flow, carrying secretly usually.Cleaning with dry gas can also device for drying and filtering 232.Under pressure, clean can take away and remove thus can a little less than be attached to particle and other pollutant on physisorption media filtration element and the particular filter particulate filtration element.In fact, cleaning is that ability by after-filter 232 absorb polluted matters makes its regeneration.The ability that it will be understood to those of skill in the art that filtrator 232 of the present invention also can be replenished by replacing discarded filtrator 232.
Certainly, as the skilled person will appreciate, the SMEF of being used for reticle pod environment control of the present invention can have many alternative embodiment also within the scope of the invention.Such embodiment includes but not limited to change number and position, the position of change filtrator, the area that changes filtrator, the several less filtrators of use of the layer that comprises filtrator and uses a plurality of cleaning ports.
Though foregoing description comprises many features, these should not be interpreted as limiting the scope of the invention, and only provide the explanation of the present part preferred embodiment of the present invention.Therefore, scope of the present invention should be determined by claims and legal equivalents thereof rather than by example described herein.

Claims (31)

1. graticule SMIF box, it is configured at controlled environment internal support graticule, described controlled environment maintenance does not cause the crystal growth pollution thing basically, and described graticule is characterised in that the patterned surface with first shape and first area, and described graticule SMIF box comprises:
Box base portion and box shell portion, it cooperatively interacts to form described controlled environment, described box base portion comprises first surface, second surface and center pit, described first surface is configured to be positioned within the described controlled environment, described second surface is configured to be positioned at outside the described controlled environment, and described center pit by described first surface and second surface around and between described first surface and second surface, limit air flow path;
A plurality of graticule supports and fairlead, it is installed on the described first surface to support the graticule on it, described graticule support and fairlead limit the graticule housing region with receiving surface, when described graticule was contained on the described box base portion, described receiving surface extended jointly with described patterned surface basically;
Filter frame, it has openend, perforation bottom and sidewall, described sidewall is connected to described perforation bottom to limit the longitudinal air flow passage betwixt with described openend, being shaped as in the mode with described box air-tight fit of described filter frame closely is contained in the described center pit, and described openend is close to described first surface, and described perforation bottom is recessed from described first surface; With
The filtrator of layering, it has the zone that limits the filter shape with filter area, described plain filter is arranged in the described gas channel in the mode that is sealed and matched with described openend, and the gas that makes basically all enter or leave described filtrator all flows through described filter area, and described filter area is the pith of described first area.
2. the graticule SMIF box of claim 1, wherein said filter area are six ten (60%) at least percent of described first areas.
3. the graticule SMIF box of claim 1, wherein said filter shape and described first shape are basic identical.
4. the graticule SMIF box of claim 1, wherein said filter area is positioned, and make described receiving surface concentric and cover on the described filter area with described filter area, and described filter area is close to described receiving surface basically.
5. the graticule SMIF box of claim 1, wherein said filter area limits the described first surface of described box base portion substantially and is unique entrance and exit that gas passes in and out described controlled environment.
6. the graticule SMIF box of claim 1, wherein said plain filter comprises a plurality of parallel filtering element that is positioned at described filter frame, wherein selects each filtering element to remove to the described crystal growth pollution thing that causes of small part from the described gas that enters or leave described filtrator.
7. the graticule SMIF box of claim 6, wherein said a plurality of parallel filtering elements comprise that at least one filtering element that comprises particulate filter medium and at least one comprise the filtering element of the adsorbing medium that is used for adsorptive gaseous pollutant.
8. the graticule SMIF box of claim 7, wherein said adsorbing medium can adsorb and be selected from acid, organic and inorganic condensable contamination, sulphuric dioxide (SO 2) gas, ammonia (NH 4) and aqueous vapor (H 2O) at least a gaseous contaminant in, wherein said gaseous contaminant are present in described controlled environment and enter or leave among gas one or more of described filtrator.
9. the pollutant levels in the graticule SMIF box of claim 8, wherein said controlled environment remain at least part per billion continuously.
10. the graticule SMIF box of claim 1 remains on to wherein said filtrator property in bond in the described filter frame to form tube, and described tube is configured to remain on releasedly in the described center pit, makes it replaceable to replenish the filtration capacity of described filtrator.
11. the graticule SMIF box of claim 1, wherein said box part also comprises:
At least one cleans port, and it is included in the opening that extends between described first and second surfaces of described box part;
Gas syringe, its sealing is contained in the described cleaning port, described gas syringe is configured to be connected to the gas access, and described gas access is used for purge gas is expelled to the described controlled environment of described box, with the pollutant that washes described controlled environment with make described filter regeneration; With
Non-return valve, it is configured to as long as described purge gas is not injected in the described controlled environment, just prevents that the gas transfer from entering and leaving described controlled environment.
12. the graticule SMIF box of claim 11, wherein said purge gas are selected from very dry nitrogen and very dry argon gas.
13. the graticule SMIF box of claim 1, wherein said openend has the gas contact area and the described perforation bottom that equal described filter area substantially and comprises a plurality of perforation, wherein each perforation has the perforation field that is communicated with described controlled environment extraneous gas, and wherein said perforation field sum is significantly less than the gas contact area of described openend.
14. a crystal that is used to reduce in the controlled environment forms the method for pollutant, described controlled environment is around the graticule that is bearing in the graticule SMIF box, described graticule has the patterned surface of first shape, and described first shape has first area, and described method comprises:
Box base portion and box shell portion are provided, described box shell portion can the described box base portion of sealed engagement to limit described controlled environment, described box base portion disposes around center pit and cleans the first and second relative surfaces of port with at least one, described center pit and described cleaning port limit air flow path between described first surface and second surface, wherein said first surface is positioned within the described controlled environment, and described second surface is positioned at outside the described controlled environment;
A plurality of graticule supports are provided on described first surface, described graticule support limits the graticule receiving surface, when described graticule is contained on the described graticule support, basic common extension of described graticule receiving surface and described patterned surface, described graticule receiving surface has first shape and first area;
Cartridge filter is inserted in the described center pit, described cartridge filter has openend, perforation bottom and limit the sidewall and the plain filter of gas passage between described openend and described perforation bottom, described plain filter has first filter area of including described gas passage in, make the most approaching described openend of described first filter area, described cartridge filter is inserted in the described center pit, so that the most approaching described first surface in the position of described first filter area and make described perforation bottom recessed from described first area;
Select the scope of described first filter area, make that described first filter area is the pith of described first area;
Hermetically the gas syringe joint is installed in described at least one cleaning port, described gas syringe joint is connected to the purge gas inlet; With
By making purge gas enter into described controlled environment termly and contact with described first filter area rinsing out crystal formation pollutant substantially, and make described filter regeneration from described controlled environment and described filtrator by described purge gas inlet.
15. the method for claim 14, wherein said first filter area are six ten (60%) at least percent of described first areas.
16. the method for claim 14, the shape of wherein said first filter area meet described first shape substantially.
17. the method for claim 14, the position of wherein said first filter area makes described graticule receiving surface concentric and cover on described first filter area with described first filter area, and the most approaching described receiving surface in the position of described first filter area.
18. the method for claim 14, wherein said filter area limit the described first surface of described box base portion basically and be unique entrance and exit that gas passes in and out described controlled environment.
19. the method for claim 14, wherein said plain filter comprises a plurality of parallel filtering element that is positioned at described filter frame, wherein selects each filtering element to remove to the described crystal growth pollution thing that causes of small part from the described gas that enters or leave described filtrator.
20. the method for claim 19, wherein said plain filter comprises at least one particle filtering element that is used for filtering particle and at least one absorptive element, wherein said absorptive element comprises the adsorbing medium of the gaseous contaminant that can adsorb at least a known promotion crystal growth, and described gaseous contaminant is selected from acid, organic and inorganic condensable contamination, sulphuric dioxide (SO 2) gas, ammonia (NH 4) and aqueous vapor (H 2O), wherein said gaseous contaminant is present in described controlled environment and enters or leave among gas one or more of described filtrator.
21. the method for claim 19, wherein the described concentration of crystal growth pollution thing that causes in described controlled environment remains at least part per billion continuously.
22. a graticule SMIF box comprises:
Box base portion and box shell portion, it cooperatively interacts to form controlled environment, described box base portion comprises first surface, second surface and center pit, described first surface is configured to be positioned within the described controlled environment, described second surface is configured to be positioned at outside the described controlled environment, and described center pit by described first surface and second surface around and between described first surface and second surface, limit air flow path;
A plurality of graticule supports and fairlead, it is installed on the described first surface to support the graticule on it;
Graticule, it is bearing on described graticule support and the graticule fairlead, and described graticule has the patterned surface that is easy to be caused the damage of crystal growth pollution thing, and described patterned surface has first shape and first area;
Filter frame, it has openend, perforation bottom and sidewall, described sidewall is connected to described perforation bottom to limit the longitudinal air flow passage betwixt with described openend, being shaped as in the mode with described box air-tight fit of described filter frame closely is contained in the described center pit, and the most approaching described first surface of described openend, described perforation bottom is recessed from described first surface; With
Plain filter, it has the zone that limits the filter shape with first filter area, described plain filter is configured in the described gas channel in the mode that is sealed and matched with described openend, and the gas that makes basically all enter or leave described filtrator all flows through described filter area, and described filter area is the pith of described first area.
23. the graticule SMIF box of claim 22, wherein said first filter area are six ten (60%) at least percent of described first areas.
24. the graticule SMIF box of claim 22, the shape of wherein said first filter area meets described first shape substantially.
25. the graticule SMIF box of claim 22, the position of wherein said first filter area makes described patterned surface concentric and cover on described first filter area with described first filter area, and the most approaching basically described patterned surface in the position of described first filter area.
26. the method that the crystal on the graticule that is used to reduce in graticule SMIF box forms, described graticule has the patterned surface of first shape, and described first shape has first area, said method comprising the steps of:
Provide to have the graticule SMIF box that cleans inlet and washing outlet,
The cartridge filter that has at least a characterization of adsorption in physisorption and the chemisorption is provided in described washing outlet, be used for absorb polluted matter when described box is not cleaned, described cartridge filter has the filtering surface of inside exposure, and the surface area of described filtering surface is at least 50% of described first area; With
In described porch purge gas is injected described graticule SMIF box, described thus purge gas leaves described graticule SMIF box by described cartridge filter.
27. the method for claim 26 is further comprising the steps of: the described graticule of described relatively filtering surface concentric locating, and be positioned to make it to face the described patterned surface of described graticule the described filtering surface.
28. the method for claim 26 is further comprising the steps of: by cleaning described graticule SMIF box with clean dry air at least, described thus clean dry air leaves described box by described cartridge filter so that the described characterization of adsorption regeneration of described cartridge filter.
29. the method that the crystal on the graticule that is used to reduce in graticule SMIF box forms, described graticule has the patterned surface of first shape, and described first shape has first area, said method comprising the steps of:
Cartridge filter with characterization of adsorption is provided, described cartridge filter is in the wall of described reticle pod and the filtering surface that has the filtering surface of inside exposure and outwards expose, the surface area of the filtering surface of described inside exposure is at least 50% of described first area, the filtering surface of described outside exposure is exposed to the outside of described reticle pod, the filtering surface of described outside exposure have a plurality of non-return valve and
Utilize the described reticle pod of purged with purge gas, described thus purge gas leaves described reticle pod by the described cartridge filter that comprises described non-return valve.
30. the method for claim 29, further comprising the steps of: by repeatedly cleaning described graticule SMIF box with clean dry air at least, described thus clean dry air is left described box by described cartridge filter so that wherein have the characterization of adsorption of the described cartridge filter of graticule and repeatedly regenerate.
31. the method for the pollutant in the substrate container that is used to reduce wherein have the pollution sensibility substrate, described substrate comprises the exposure flat surfaces with first shape, and described first shape has first area, said method comprising the steps of:
For providing, described substrate container cleans inlet and washing outlet,
Cartridge filter with characterization of adsorption is provided in described washing outlet, described characterization of adsorption is a kind of in physisorption and the chemisorption, described cartridge filter has the filtering surface of inside exposure, the surface area of described filtering surface is at least 50% of described first area, and described cartridge filter have can be to the outside exposed side of the external opening of described substrate container; With
Clean the inside of described substrate container, and while utilization during the cleaning of described substrate container regenerates the characterization of adsorption of described cartridge filter by the clean dry air at least that described cartridge filter leaves described substrate container.
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