CN101178460B - 多芯光纤 - Google Patents

多芯光纤 Download PDF

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CN101178460B
CN101178460B CN2007101657260A CN200710165726A CN101178460B CN 101178460 B CN101178460 B CN 101178460B CN 2007101657260 A CN2007101657260 A CN 2007101657260A CN 200710165726 A CN200710165726 A CN 200710165726A CN 101178460 B CN101178460 B CN 101178460B
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工藤学
爱川和彦
妻沼孝司
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Fujikura Ltd
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Abstract

公开一种多芯光纤装置。该多芯光纤装置包括具有石英的包层，以及嵌入该包层内的多个芯。每个芯具有的直径(D)在1.3μm到2.0μm范围内，数值孔径(NA)为0.35到0.45，折射率分布系数(α)为2.0到4.0。每个芯的中心具有的锗含量为20wt％到30wt％。相邻的芯的间距为3.0μm或更大。

Description

多芯光纤
技术领域
符合本发明的装置涉及一种多芯光纤，优选地应用于使用光纤的成像方法，诸如共焦荧光成像方法。
背景技术
在诸如胃肠病、肺病、或心血管病的众多医学领域中，使用内窥镜来直接观察组织的表面，或作为治疗的辅助装置。进而，与内窥镜联合进行的荧光诊断引起了广泛的关注。
被激发光照射并被激发的组织发出具有特征光谱的荧光。当组织具有诸如肿瘤或癌的损伤时，该组织发出具有不同于正常特征光谱的光谱的特定的荧光。荧光诊断是一种利用该特征来从正常组织中辨别具有损伤的组织的诊断方法。由于该诊断方法不需要从患者身体上采集组织样品，患者免除了身体上的负担。这是该方法的许多优点之一。
日本专利申请公开No.H08-224240公开了相关技术。
利用多芯光纤的共焦荧光成像方法经常与荧光诊断联合使用。在该方法中，具有不同波长的多个激发光束通过多芯光纤照射组织，并且接着通过该光纤收集具有来自该组织的激发光的荧光。通过分离激发光中的荧光，发生荧光光谱。由于在多芯光纤中嵌入的芯具有二维排列，在芯上进行的该信息处理产生二维图像。进而，通过变化的垂直位置和仅从每个焦点过滤信息而往复进行的该处理提供共焦图像。
国际申请的公布的日文翻译No.2005-532883公开了相关的技术。
发明内容
本发明的特定实施例提供了有助于准确荧光诊断的多芯光纤。
根据本发明的示范实施例，多芯光纤包括具有石英的包层；以及嵌入该包层的多个芯，每个芯具有的直径(D)在1.3μm到2.0μm范围内，数值孔径(NA)为0.35到0.45，折射率分布系数(α)为2.0到4.0，每个芯的中心具有的锗含量为20wt％到30wt％，其中，相邻的芯的间距为3.0μm或更大。
附图说明
图1是根据本发明的实施例的多芯光纤的横截面图；
图2是示出了芯和环绕着芯的包层周围的折射率曲线的图；
图3是示出了用于测量该多芯光纤的属性的测量设备的示意图；
图4是多芯光纤的发射光谱，在相应的芯中的锗含量为0wt％，19wt％，30wt％以及33wt％，由图3所示的测量设备测量；
图5是示出了由锗引起的发射强度与相应的芯中的锗含量的依赖关系的图；
图6是发射光谱测量设备的示意图；
图7表示向现有的多芯光纤入射波长为488nm的激发光，测定回光的发射光谱的示意图；以及
图8表示向现有的多芯光纤入射波长为440nm的激发光，测定回光的发射光谱的示意图。
具体实施方式
图6示意性地示出了关于研究由多芯光纤收集的光的谱线的测量设备100。
测量设备100包括发射波长为488nm的激光作为激发光的光源102，用于将该激光汇聚成直径2μm到3μm的光束的光学透镜104，被定位以接收该光束的多芯光纤106，设置于多芯光纤106的输出端的物镜108，以及与物镜108光学耦合的CCD 110。测量设备100还包括：二向色滤光片112，该二向色滤光片112允许来自光源102的激光透射，并反射从物镜108反射并按顺序透射过多芯光纤106和光学透镜104的光；以及光谱分析仪114，用来接收由二向色滤光片112反射的光(由物镜108反射的光)，并对该光进行分析。测量设备100还包括：XYZ平台116，用来调整多芯光纤106的位置，以使光学透镜104和多芯光纤106光学耦合；以及用来降噪的反射滤镜118。
图7示出了光谱，其中示范实施例在波长515nm附近具有相对尖锐的发射尖峰，并在515nm到750nm范围内具有宽发射峰，其由光源102发射激光(单模，22mW)产生，光学镜头104收集光线使光入射到多芯光纤106的多个芯中之一，并对由物镜108反射并返回的光进行分析。
图8示出了针对示范实施例观察到的光谱，其中激发光的波长为405nm。该光谱具有波长460nm附近的尖峰，以及在600nm到640nm具有宽峰。同样在示范实施例中，其中激发光的波长为635nm，在光谱中观察到更长的波长，包括在从激发光的波长开始到大于激发光波长约200nm的范围内的光分量。
具有相对宽的光谱的相关光使荧光诊断的准确性劣化，并很难从荧光中过滤。进而，该光纤自身引起该相关光，否则其不会被观察到。本发明正是基于这些发现。
下面将参考附图描述本发明的示范实施例。同时，在这些附图中的多芯光纤的图示仅仅是示意性质的图，因此图中所示的元件不必按比例绘制。可允许实际产品中的元件的形状、尺寸、比例和排列与图示中的不同。例如，被绘制为圆形的任何结构可被修改为椭圆形，并且被绘制成蜂窝状排列的任何结构可被修改成正交阵列。
参考图1所示的横截面图，根据本发明实施例的多芯光纤10包括：图像圆形区域12，通过该图形圆形区域12来传输图像；包裹着图像圆形区域12的外围的石英-玻璃护套(jacket)14；以及进一步包裹石英-玻璃护套14的外围的覆盖层16。
图像圆形区域12还包括包层2和嵌入包层2的多个芯1，该包层2包括石英。每个芯1被配置为传输光来提供图像的像素的信息。包层2为这些芯1提供共同基(common base)。芯1之间的空间由包层2完全填充。图像圆形区域12的直径为，例如，约500μm，其中嵌入的芯1的数目在1万到3万的范围内。由此，聚焦于多芯光纤10的一端的图像被在空间上分割成芯1的数目，并且分割后的图像分别通过芯1传输，使得该图像在该多芯光纤10的另一端重现。
图2示出了两个芯1和包层2周围的折射率曲线。芯1包括掺锗(二氧化锗，GeO2)的石英，可增加折射率。掺杂剂的浓度向着芯1的中心位置增加，因此该折射率曲线是上凸的，并且在芯1的中心位置具有峰值。该曲线的折射率分布系数α为，例如，2.0到4.0。该折射率分布系数α满足以下公式：
n(r)＝n1[1-2Δ(r/a)α]1/2(0≤r≤a)，
其中n(r)表示距芯的中心r处的折射率，n1表示芯的中心处的折射率，a表示芯的半径。
进而，芯1的每一个具有1.3μm到2.0μm的直径。相邻的芯1的间距D为4.0μm或更小。数值孔径(NA)是从0.35到0.45。
包层2包括掺氟的石英，可降低折射率。包层2中的折射率保持基本恒定。
多芯光纤按照以下工艺生产。首先，该工艺包括通过汽相轴向沉积法(VAD)形成石英芯预制微粒(quartz core preform soot)，其中掺锗，使之具有在上述范围内的折射率分布系数α。接着，工艺包括在烧结炉中加热该预制微粒，以使该预制微粒透明玻璃化(transparent-vitrified)，由此得到用于芯的玻璃棒。随后，工艺包括通过等离子体外部汽相沉积方法或外部汽相沉积方法(OVD)在玻璃棒的外围形成掺氟玻璃层，这将是多芯光纤的包层，由此形成光纤基本主体。OVD方法包括在氢氧焰中形成微粒颗粒，并通过烧结使微粒颗粒玻璃化。另外，该玻璃棒也可通过PCVD方法或MCVD方法产生的掺氟管装上护套，而不是通过等离子体外部汽相沉积方法等得到掺氟玻璃层。然后，工艺包括将光纤基本主体拉伸成直径数百μm的光纤缆绳。该工艺还包括以预定长度的间隔将光纤缆绳切成大约1万个光纤缆绳。这些光纤缆绳被一起插入石英管，并拉伸，由此生产直径大约500μm的多芯光纤。最后，该工艺包括在最外层上形成大约50μm厚的涂敷层。由此获得多芯光纤的最终产品。
下面将描述发明人旨在研究相关的光的起源而进行的一些实验。
图3示意性地示出了这些实验中使用的测量设备的示范实施例。测量设备200包括发出波长为488nm的激光作为激发光的光源102，用于将该激光汇聚为直径2μm到3μm的光束的光学透镜104，被定位以接收该光束的多芯光纤106，用来调整多芯光纤106位置的XYZ平台116，以及光学耦合于光纤106的输出端的光谱分析仪114(Anritsu Corporation生产的AQ-6315A)。由Nichia Corporation生产的单模激光设备(波长405nm，输出功率10mW)应用于光源102。
这些实验使用了多个多芯光纤。这些多芯光纤区别在于各自的芯1的锗含量不同。这些多芯光纤在芯的中心具有的锗含量分别为10wt％，19wt％，22wt％，26wt％，30wt％，33wt％。还为这些实验提供了另一多芯光纤，该多芯光纤利用玻璃棒生产，用于没有掺锗的芯(可替换地，在后文称为具有锗含量为0wt％的多芯光纤)。
图4示出了由测量设备200(图3)测出的发射光谱，分别与锗含量为0wt％，19wt％，30wt％和33wt％的多芯光纤对应。如图所示，该发射光谱具有波长范围大约500nm到900nm或更长的宽峰，并且示出最大值都在650nm处。在这些宽峰中发射强度随着芯中锗含量的降低而降低。进而，在具有锗含量为0wt％的多芯光纤的情况下，未完成的发射基本上逐渐消失。结果表明在芯中掺杂的锗与具有宽峰的发射有关。
图5示出的图中，纵轴是在700nm测得的发射强度，横轴是芯的中心的锗含量(wt％)，该图与发明人对于宽带发射的强度如何随着锗含量的变化而变化的研究有关。其中，在芯的中心的锗含量为0wt％的情况下，宽带发射的强度位于探测极限的附近或低于该极限，随着锗含量的增加，宽带发射的强度增加。
进而，实验给出的结果是随着多芯光纤延长，发射强度增大；随着激发光的波长增加(例如，488nm或635nm)，发射强度减小。实验产生的结果是在纯硅芯和掺氟的硅芯的多芯光纤情况下，与宽峰对应的光不能被辨认出。
根据上述结果，可以理解的是，与宽峰对应的发射是在芯中被激发光激发的锗发射的发光。进而，发明人研究了在多大程度上该发射强度不造成实际问题，而且结果显示，-65dBm或更低的发射强度不造成实际问题。更具体地，根据图5，可以理解的是，在芯的中心，锗含量为30％或更少不会造成实际问题。
接着，下面将描述多芯光纤的具有实际重要性的分辨率和对比度属性。一个影响分辨率的参数是芯之间的间距。如果相邻的芯的间距更短，物理分辨率增加，然而，过窄的间距导致产生串扰。如果串扰增加，将发生光的扩散，因此将出现对比度下降或着色图像的问题。尽管着色在用于共焦荧光成像方法中的多芯光纤中可能不会引起严重的问题，但考虑到折射率曲线，该多芯光纤应设计成在分辨率和对比度之间实现适当的平衡。
根据发明人的研究，具有以下组成部分的多芯光纤的示范实施例是用于共焦荧光成像法的。更具体地，其是多芯光纤(此后称为多芯光纤A)，该多芯光纤具有石英包层，以及嵌入该包层内的多个芯，其芯直径从1.3μm到2.0μm；数值孔径从0.35到0.45；折射率分布系数α从2.0到4.0；每个芯的中心具有的锗含量为20wt％到30wt％，其中相邻的芯的间距为3.0μm或更多。
由于多芯光纤A在芯的中心具有的锗含量为30wt％或更低，由被波长为450nm到635nm的激发光(30mW)激发的锗造成的波长范围从500nm到900nm的宽带发射可被抑制。因此，来自观察点的荧光可在观察时利用荧光成像法以较高的S/N比得到。另一方面，在芯的中心具有的锗含量降到20wt％以下时，由于材料的限制，很难将所需的NA保持在0.35以上。然而，由于多芯光纤A具有的锗含量范围为20wt％到30wt％，所需的NA可以得到保证。
进而，在折射率分布系数α小于2.0的情况下，由于实际上NA变得相对较小，该数值孔径数不足，并且不能以足够的强度观察来自观察点的荧光。另一方面，折射率分布系数α大于4.0表示锗含量大量增加。由此，对应于锗造成的宽峰的发射增加，并且因此造成S/N比的下降。由于上述原因，折射率分布系数α优选为2.0到4.0。
对于芯的直径，如果该直径小于1.3μm，生产多芯光纤是有可能的。然而，如此小的芯直径导致基模(LP01)的电场加宽，因此将光限制于芯内的效果被减弱。该结果可能导致弯曲损耗增加的状态，因此它将变得不可用。可替换地，串扰可能增加，结果，分辨率变差。然而，如果芯的直径超过2.0μm，由于锗含量的大量增加，将造成在500nm到900nm范围的宽带发射的增加。由于上述原因，芯的直径优选为从1.3μm到2.0μm。
需要NA为0.35或更大，以从观察点获取足够量的荧光。如果实现超过0.45的NA，则需要在包层中增加氟或硼。这导致芯中的锗的浓度增加。因此，NA优选是0.45或更小。
进而，在多芯光纤A的示范实施例中，芯中包含的氯含量优选是0.05wt％或更少(后文中称此类光纤为多芯光纤B)。原因是，根据发明人的研究，当氯含量更高时，对应于宽峰的发射趋向于更高。为了将芯中的氯含量抑制到0.05wt％以下，例如在生产光纤基本主体时，要求不能使用诸如SiCl4的含氯的原材料，而使用有机硅烷系的化合物，诸如4-甲氧基硅烷(Si(OCH3)4)气体。进而，需要在脱水和烧结时避免使用氯系气体，而使用其它卤素系气体。
具体地，在芯中氯含量为0.3wt％或更高的情况下，造成的问题是在拉伸基本主体以生产光纤的过程中产生大量的气泡。因此工艺的产量下降。
进而，在多芯光纤A的示范实施例中，如果相邻的两个芯的间距(中心(中心轴)之间的距离)范围为3.0μm到4.0μm，且芯间距/芯直径的比例为1.7到2.6(此类光纤在后文被称为多芯光纤C)，将会是很有用的。因此，观察点能够以细胞级(约10μm)的分辨率进行观察。如果芯的间距超过4.0μm，则不能保持细胞级的分辨率。对于要求此类等级的观察，它可能不适用。进而，在芯间距小于3.0μm的情况下，由于NA是从0.35到0.45，弯曲损耗和串扰增加，并且导致不能获得所需要的信息(光谱和强度的形式)的状况。如果芯间距/芯直径的比例小于1.7，多芯光纤中包层的厚度变得不足，将光限制在芯中的限制变得不足，并且因此，弯曲损耗和串扰增加。进而，如果芯间距和芯直径的比例超过2.6，基模电场(模场直径)被加宽，弯曲损耗增加，并且邻近的芯的串扰增加。这些将导致不可能增加像素密度。
进而，在上文提到的多芯光纤A、B和C的示范实施例中，优选地，波长为635nm的光透过对应的芯以单模传输。由此，波长为635nm或更长的荧光可在单模传输。由于在高阶模中串扰的增加，通过实现单模，由于高阶模产生的串扰可被排除。更准确的信息可从透过由相应的芯传输的荧光中提取。
接着，下面将给出例子来解释根据本发明的示范实施例的多芯光纤的属性。
表1列出了多芯光纤的结构参数及其评估结果。在生产表1中的示例性号码8和22的多芯光纤的过程中，玻璃层中未加入氟，该玻璃层将是多芯光纤的包层，因此这些多芯光纤具有纯硅的包层。进而，在示例性号码9和23的多芯光纤中，通过直接方法生产的用于芯的玻璃棒用在生产光纤基本主体。
Figure GSB00000242390100101
而且，将要测量的多芯光纤的总长度为2m。由于考虑到将多芯光纤用在荧光成像方法中时至少需要2m，所以由此确定。如果总长度增加，芯中的锗含量增加。由于随着多芯光纤的总长度增加，上述的锗引起的发射趋向于更加明显，在实践中，在此长度下得到如下所述的属性非常重要。
表1所示的发射其强度是通过图3所示的测量设备200测量的光强度。更具体地，通过如下步骤，在波长700nm下测量发射强度：将来自利用波长405nm的单模激光元件(Nichia Corporation生产)的光源102的激光(10mW)汇聚成为直径几μm的光束，将光束入射进多芯光纤，随后利用光谱分析仪114在多芯光纤的输出端测量。标志“好”表示强度为-65dBm或更小的情况，而标志“坏”表示强度大于-65dBm的情况。进而，对于表1中所示的荧光信号，光谱形状和强度由光谱分析仪114处理。实质上，计算S/N比，接着该比值位于不造成实际问题的水平的情况被标识为“好”，而该比值位于造成实际问题的水平的其他情况被标识为“坏”。进而，对于最终评估，发射强度和荧光信号两者均为“好”的情况被标识为“好”，而任何任一项为“坏”的均标识为“坏”。
表1示出：具有任意以下芯直径结构参数的多芯光纤的示范实施例不能在发射强度和荧光信号两项中都被评估为“好”，该结构参数为：芯中心的锗含量、数值孔径(NA)、芯的折射率分布系数、相邻的芯的间距均超出多芯光纤A的示范实施例的结构参数范围。另一方面，任意对应于上述多芯光纤A的多芯光纤都在最终评估中被评估为“好”。由此可知，根据本示范实施例的多芯光纤的优点将可以被理解。
如上所述，由于根据本示范实施例的多芯光纤构造为落入芯直径、芯的中心的锗含量、芯的折射率分布系数、以及其它结构参数的范围内，由芯中锗引发的从500nm到900nm波长范围的发射被抑制，因此该光纤能够以高S/N比观察来自组织的荧光。进而，通过限制数值孔径(NA)、相邻的芯的间距和芯间距与芯直径的比值，减小了弯曲损耗和串扰，并且由此实现细胞级的分辨率。进而，通过实现单模，串扰被进一步减小，并且通过限制芯中氯的浓度，从500nm到900nm波长范围的发射被进一步抑制。
更具体地，根据本发明，提供了能够提高荧光诊断的准确度的多芯光纤。
尽管本发明通过其特定示范实施例进行了描述，但本发明并不限于上述的示范实施例。根据上述的教导，本领域技术人员将想到上述的实施例的改进和变化。

Claims (5)

1.一种多芯光纤，包括：
包括石英的包层；以及
嵌入所述包层的多个芯，每个芯具有的直径(d)在1.3μm到2.0μm范围内，数值孔径(NA)为0.35到0.45，折射率分布系数(α)为2.0到4.0，每个芯的中心具有的锗含量为20wt％到30wt％，
其中，相邻的芯的间距(D)为3.0μm到4.0μm。
2.如权利要求1的多芯光纤，其中，所述每个芯具有的氯含量为0.05wt％或更少。
3.如权利要求1的多芯光纤，其中，所述包层包括氟。
4.如权利要求1的多芯光纤，其中，所述间距(D)与所述直径(d)之比为1.7到2.6。
5.如权利要求1的多芯光纤，其中，所述芯以单模传输波长为635nm的光。
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