CN101175579B - 干燥表面的方法 - Google Patents

干燥表面的方法 Download PDF

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Publication number
CN101175579B
CN101175579B CN2006800164880A CN200680016488A CN101175579B CN 101175579 B CN101175579 B CN 101175579B CN 2006800164880 A CN2006800164880 A CN 2006800164880A CN 200680016488 A CN200680016488 A CN 200680016488A CN 101175579 B CN101175579 B CN 101175579B
Authority
CN
China
Prior art keywords
gas
cleaning fluid
liquid
liquid layer
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800164880A
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English (en)
Chinese (zh)
Other versions
CN101175579A (zh
Inventor
木下圭
菲利普·恩格塞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research AG
Original Assignee
SEZ AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEZ AG filed Critical SEZ AG
Publication of CN101175579A publication Critical patent/CN101175579A/zh
Application granted granted Critical
Publication of CN101175579B publication Critical patent/CN101175579B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Detergent Compositions (AREA)
CN2006800164880A 2005-05-13 2006-04-11 干燥表面的方法 Expired - Fee Related CN101175579B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AT8312005 2005-05-13
ATA831/2005 2005-05-13
PCT/EP2006/061522 WO2007054377A1 (en) 2005-05-13 2006-04-11 Method for drying a surface

Publications (2)

Publication Number Publication Date
CN101175579A CN101175579A (zh) 2008-05-07
CN101175579B true CN101175579B (zh) 2012-06-27

Family

ID=37890725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800164880A Expired - Fee Related CN101175579B (zh) 2005-05-13 2006-04-11 干燥表面的方法

Country Status (7)

Country Link
US (1) US8038804B2 (enExample)
EP (1) EP1888263A1 (enExample)
JP (1) JP2008540994A (enExample)
KR (1) KR101223198B1 (enExample)
CN (1) CN101175579B (enExample)
TW (1) TWI364524B (enExample)
WO (1) WO2007054377A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5096849B2 (ja) * 2007-09-13 2012-12-12 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5390873B2 (ja) * 2009-01-28 2014-01-15 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5538102B2 (ja) * 2010-07-07 2014-07-02 株式会社Ｓｏｋｕｄｏ 基板洗浄方法および基板洗浄装置
JP5615650B2 (ja) 2010-09-28 2014-10-29 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
CN108176640A (zh) * 2017-11-17 2018-06-19 天津津航技术物理研究所 一种提高激光陀螺腔体清洗洁净度的干燥方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1045539A (zh) * 1989-02-27 1990-09-26 菲利浦光灯制造公司 对经液体处理后的基片进行干燥的方法和装置
US5271774A (en) * 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5882433A (en) * 1995-05-23 1999-03-16 Tokyo Electron Limited Spin cleaning method
CN2460229Y (zh) * 2001-01-16 2001-11-21 集贤实业有限公司 干燥气化装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326392A (ja) * 1992-05-14 1993-12-10 Fujitsu Ltd 半導体装置の製造方法
JP3402932B2 (ja) * 1995-05-23 2003-05-06 東京エレクトロン株式会社 洗浄方法及びその装置
JPH1041267A (ja) * 1996-07-19 1998-02-13 Kaijo Corp 基板の洗浄・乾燥装置
US5997653A (en) * 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US6729040B2 (en) * 1999-05-27 2004-05-04 Oliver Design, Inc. Apparatus and method for drying a substrate using hydrophobic and polar organic compounds
US7021319B2 (en) * 2000-06-26 2006-04-04 Applied Materials Inc. Assisted rinsing in a single wafer cleaning process
US20020121286A1 (en) 2001-01-04 2002-09-05 Applied Materials, Inc. Rinsing solution and rinsing and drying methods for the prevention of watermark formation on a surface
TW200303581A (en) * 2002-02-28 2003-09-01 Tech Ltd A Method and apparatus for cleaning and drying semiconductor wafer
TW556255B (en) 2002-06-04 2003-10-01 Semiconductor Mfg Int Shanghai Drying method of post-cleaned semiconductor wafer
JP4030832B2 (ja) * 2002-08-20 2008-01-09 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
WO2005015627A1 (en) * 2003-08-07 2005-02-17 Ebara Corporation Substrate processing apparatus, substrate processing method, and substrate holding apparatus
TWI236061B (en) 2003-08-21 2005-07-11 Grand Plastic Technology Corp Method for wafer drying
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1045539A (zh) * 1989-02-27 1990-09-26 菲利浦光灯制造公司 对经液体处理后的基片进行干燥的方法和装置
US5271774A (en) * 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5882433A (en) * 1995-05-23 1999-03-16 Tokyo Electron Limited Spin cleaning method
CN2460229Y (zh) * 2001-01-16 2001-11-21 集贤实业有限公司 干燥气化装置

Also Published As

Publication number Publication date
KR101223198B1 (ko) 2013-01-17
CN101175579A (zh) 2008-05-07
TWI364524B (en) 2012-05-21
EP1888263A1 (en) 2008-02-20
US8038804B2 (en) 2011-10-18
KR20080005553A (ko) 2008-01-14
WO2007054377A1 (en) 2007-05-18
US20080190455A1 (en) 2008-08-14
JP2008540994A (ja) 2008-11-20
TW200639361A (en) 2006-11-16

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120627

Termination date: 20190411