CN101165894A - 用于图像传感器的芯片封装及其制造方法 - Google Patents

用于图像传感器的芯片封装及其制造方法 Download PDF

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CN101165894A
CN101165894A CNA2007101818794A CN200710181879A CN101165894A CN 101165894 A CN101165894 A CN 101165894A CN A2007101818794 A CNA2007101818794 A CN A2007101818794A CN 200710181879 A CN200710181879 A CN 200710181879A CN 101165894 A CN101165894 A CN 101165894A
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chip
semiconductor chip
circuit pattern
semiconductor
circuit board
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CN101165894B (zh
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姜秉英
黄山德
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Hanwha Techwin Co Ltd
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Samsung Techwin Co Ltd
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    • H01L2924/19041—Component type being a capacitor

Abstract

本发明涉及用于图像传感器的芯片封装及其制造方法。用于图像传感器的芯片封装包含第一半导体芯片，该第一半导体芯片具有形成拍摄器件和第一电路图案的第一表面和与第一表面相对的形成第二电路图案的第二表面。第一和第二电路图案被电连接。芯片封装还包含固定到第一半导体芯片的第二表面上的第二电路图案上的第二半导体芯片。印刷电路板面向第一半导体芯片的第二表面并在第一和第二半导体芯片与外部之间传输电信号。外壳容纳第一和第二半导体芯片。外壳允许光穿过以到达拍摄器件。

Description

用于图像传感器的芯片封装及其制造方法
(对相关申请的交叉引用)
本申请要求2006年10月19日在韩国知识产权局提交的韩国专利申请No.10-2006-0102038的益处，在此引入其全部内容作为参考。
技术领域
本发明涉及用于图像传感器的芯片封装及其制造方法，更特别地，涉及通过将照相机模块包含的图像传感器、数字信号处理器、存储器和PCB组合到单一封装中而减小照相机模块的体积的图像传感器用芯片封装及其制造方法。
背景技术
图像传感器是改变指示成为各像素的电信号的物体的图像的光的器件。图像传感器被用于能够拍摄静止图像和电影的小型电子产品，例如，数字照相机、移动电话、PDA(个人数字助理)、包含于缓冲器中的后视监视照相机和对讲机。图像传感器包含电荷耦合器件(CCD)和互补型MOSFET氧化物半导体(CMOS)。图像传感器是一种类型的半导体芯片。
半导体芯片被封装，用于进行保护以免受外部冲击、环境和与外面的电信号交换的影响。图像传感器芯片与处理从图像传感器芯片输出的电信号的数字信号处理器(DSP)和存储图像信息的存储器连接。图像传感器芯片还与和照相机模块外面的电子器件交换电信号的柔性印刷电路板(FPCB)和硬质印刷电路板(HPCB)连接。
图1和图2是表示用于图像传感器的常规芯片封装的截面图。参考图1，图像传感器芯片1通过金属引线3引线接合(wire bond)到HPCB 6的上表面上。DSP7通过倒装芯片接合(flipchip bond)到HPCB 6的下表面上而与HPCB 6电连接。用于切割不必要的红外线的红外线(IR)切割过滤器9被布置在图像传感器2之上。由于DSP7位于HPCB 6的下表面上，因此难以减小芯片封装的体积，使得难以实现电子产品的小型化。
参照图2，图像传感器芯片1被布置在外壳4的最下面的位置上。图像传感器芯片1的上表面的外缘部分通过倒装芯片接合1a与FPCB8电连接。DSP 7置于位于外壳4外面的FPCB 8的一部分上。因此，难以减小芯片封装的体积并由此减小诸如包含芯片封装的照相机的电子产品的尺寸。
发明内容
为了解决上述和/或其它问题，本发明提供可将图像传感器、数字信号处理器、存储器和PCB包含于单一封装中，以便减小包含以上部件的照相机模块的体积的用于图像传感器的芯片封装以及用于图像传感器的芯片封装的制造方法。
根据本发明的一个方面，一种用于图像传感器的芯片封装包括：具有形成拍摄器件和第一电路图案的第一表面和与第一表面相对的形成第二电路图案的第二表面的第一半导体芯片，第一和第二电路图案被电连接；固定到第二电路图案上的第二半导体芯片；面向第一半导体芯片的第二表面并在第一和第二半导体芯片与外部之间向用于图像传感器的芯片封装传送电信号的印刷电路板；和容纳第一和第二半导体芯片以及印刷电路板并具有允许入射到拍摄器件上的光穿过的开口的外壳。
通过以化学汽相淀积方法用钨填充在第一半导体芯片中形成的通路孔或通孔，电连接第一半导体芯片的第一和第二表面上的电路图案。第一半导体芯片的第二电路图案与印刷电路板倒装芯片接合，使得第一和第二半导体芯片与用于图像传感器的芯片封装的外面交换电信号。第二半导体芯片可以是DSP芯片和/或存储器芯片。
由于第一半导体芯片、第二半导体芯片和印刷电路板沿垂直方向被一体化地封装，因此可减小用于图像传感器的芯片封装的体积。并且，由于第一半导体芯片、第二半导体芯片和印刷电路板通过倒装芯片互连被互连，因此可增加封装的集成度，并且提高了电学特性和散热特性。
由于IR切割过滤器可被淀积于第一半导体芯片的拍摄器件的表面上，因此可进一步减小用于图像传感器的芯片封装的尺寸。
用不导电的材料填充第一半导体芯片和印刷电路板之间的剩余空间的至少一部分，使得用于图像传感器的芯片封装的耐冲击特性和可靠性被提高。
根据本发明的另一方面，一种制造用于图像传感器的芯片封装的方法，包括：通过在模具的第一表面上形成拍摄器件和第一电路图案形成第一半导体芯片；在模具的第二表面上形成第二电路图案；在模具中形成通路孔或通孔；通过通路孔或通孔电连接第一和第二电路图案；以倒装芯片接合方法将至少一个第二半导体芯片与第二电路图案互连；将模具的第二表面上的第二电路图案连接到印刷电路板上；和将具有入射到拍摄器件上的光穿过的开口的外壳固定到印刷电路板上。
在半导体晶片级中执行从设置第一半导体芯片到将第二半导体芯片与第一半导体芯片的第二表面上的电路图案互连的操作。因此，大大减少用于图像传感器的芯片封装的制造时间和制造成本。
附图说明
通过参照附图详细说明本发明的优选实施例，本发明的上述和其它特征和优点将变得十分明显，在这些附图中，
图1是用于图像传感器的常规芯片封装的截面图；
图2是用于图像传感器的另一常规芯片封装的截面图；
图3是根据本发明的实施例的用于图像传感器的芯片封装的截面图；
图4是图3的用于图像传感器的芯片封装的顶视平面图；
图5是图3的用于图像传感器的芯片封装的底视平面图；
图6A示出通过在模具(die)的上表面上形成拍摄器件和电路图案设置第一半导体芯片的步骤；
图6B示出在第一半导体芯片的下表面上形成电路图案的步骤；
图6C示出在第一半导体芯片中形成通路孔或通孔的步骤；
图6D示出电连接在第一半导体芯片的上下表面上形成的电路图案的步骤；
图6E示出将第二半导体芯片电连接到第一半导体芯片的下表面上的电路图案上的步骤；
图6F示出在第一半导体芯片的下表面上的电路图案上形成凸块的步骤；
图6G示出将第一半导体芯片的下表面上的电路图案电连接到FPCB上的步骤；
图6H示出用不导电材料填充第一半导体芯片和FPCB之间的剩余空间的步骤；
图6I示出将外壳固定到PCB上的步骤；以及
图6J示出将透镜组件固定到外壳上的步骤。
具体实施方式
图3是根据本发明的实施例的用于图像传感器的芯片封装的截面图。图4是图3的用于图像传感器的芯片封装的顶视平面图。图5是图3的用于图像传感器的芯片封装的底视平面图。
参照图3、图4和图5，根据本发明的实施例的用于图像传感器的芯片封装包含第一半导体芯片10。在第一半导体芯片10的上表面上形成拍摄器件12。在第一半导体芯片10的上表面上和/或在第一半导体芯片10内形成与拍摄器件12电连接的预定的电路图案13。即，如图4所示，拍摄器件12位于第一半导体芯片10和包含第一半导体芯片10的外缘部分上的芯片接合焊盘13的电路图案的中心。芯片接合焊盘13的布置和数量可以不同。
例如红外(IR)切割过滤器的过滤器19可在拍摄器件12上形成。过滤器19可以以CVD(化学汽相淀积)或PVD(物理汽相淀积)方法被淀积于第一半导体芯片10的设置拍摄器件12的上表面上。在本实施例中，与常规技术不同，在第一半导体芯片10的上表面上不需要引线接合或倒装芯片接合。结果，在第一半导体芯片10的上表面上的淀积是可能的。因此，由于过滤器19不需要被单独固定到第一半导体芯片10之上的外壳40上，因此，可减小芯片封装的体积。
同样，包含导电焊盘15的预定的电路图案14和15也在第一半导体芯片10的下表面上形成。第一半导体芯片10的上表面上的电路图案13和第一半导体芯片10的下表面上的包含芯片接合焊盘15的电路图案14通过通路孔或通孔被电连接。如图5所示，例如数字信号处理器(DSP)芯片21和/或存储器芯片22的第二半导体芯片20与第一半导体芯片10的下表面上的电路图案14和15的预定芯片接合焊盘15电连接。结果，通过导电焊盘15从拍摄器件12输出的电信号被传送给DSP芯片21和/或存储器芯片22。柔性印刷电路板(FPCB)30也与芯片接合焊盘15电连接。结果，拍摄器件12、DSP芯片21和存储器芯片22可与外部部件交换电信号。
可以以优选为倒装芯片接合方法的各种方法进行电连接。电连接也可以以带式自动接合(TAB)方法进行。即，第一半导体芯片10和第二半导体芯片20沿垂直方向被一体化地淀积。因此，可减小芯片封装的体积。并且，倒装芯片接合具有以下优点。即，当第一半导体芯片10和第二半导体芯片20以倒装芯片互连方法被耦合时，1)消除接合线会减小需要的板面积并需要小得多的高度(最小的尺寸)，2)倒装芯片提供最高速度的电性能(最高的性能)，3)倒装芯片提供最大的输入/输出连接灵活性(最大的I/O灵活性)，4)倒装芯片在以粘性的“底层填料(underfill)”被完成时是固化的环氧树脂的固体小块，使得倒装芯片在机械上是最结实的互连方法(最结实)，以及5)倒装芯片可以是用于大批量自动生产的最低成本的互连(最低的成本)。
并且，诸如电容、电阻和线圈的无源器件(未示出)可被安装为电连接到第一半导体芯片10的下表面上。作为将无源器件电连接到第一半导体芯片10的下表面上的方法，除了安装各单个无源器件的方法以外，可使用以薄膜或厚膜的形式在第一半导体芯片10的下表面上集成无源器件的方法。
凸块16形成于第一半导体芯片10的下表面上的电路图案14和15的芯片接合焊盘15上。在倒装芯片互连或TAB方法中，凸块16是可将第一半导体芯片10电连接到包含芯片接合焊盘15的电路图案14上的导电突起。凸块16由诸如金(Au)、焊料、铜(Cu)的金属材料、在树脂中混入金属粒子的导电树脂或在树脂表面上涂敷金属材料的树脂-金属成分材料制成。凸块16的位置和数量是可变的。
凸块16和FPCB 30的导电焊盘31在倒装芯片接合方法中被电连接。结果，第一半导体芯片10、第二半导体芯片20和FPCB 30沿从上表面到下表面的方向被一体化地淀积。因此，可减小用于图像传感器的芯片封装的体积。
第一半导体芯片10的下表面和FPCB 30之间的空间可填充有底层填料。因此，可提高耐冲击特性和可靠性。
外壳40与FPCB 30的上表面耦合以包围第一半导体芯片10和第二半导体芯片20。外壳40的上侧是开放的。在外壳40的上部的内周侧上形成螺纹，使得透镜组件45可与外壳40的上部螺纹耦合。因此，外壳40保护用于图像传感器的芯片封装免受外部冲击和环境影响并保持密封。一系列的透镜、镜头筒和变焦致动构件与透镜组件45耦合。
根据以上结构，根据本发明的实施例的用于图像传感器的芯片封装可被封装为占用很少的体积，使得照相机模块的体积可被大大减小。结果，可进一步减小具有照相机模块的电子产品的尺寸。
以下参照图6A～6J说明根据本发明的实施例的制造用于图像传感器的芯片封装的方法。
图6A示出通过在晶片模具11的上表面上形成拍摄器件12和电路图案13设置第一半导体芯片10的步骤。参照图6A，第一半导体芯片10由硅晶片制成。即，通过处理晶片模具11的上表面，例如，通过选择性地多次重复膜形成过程、膜图案形成过程和杂质掺杂过程，形成拍摄器件12。形成电路图案13用于拍摄器件12的布线。电路图案13一般在形成铝薄膜后在掩模过程中形成。铝薄膜可以例如在PVD过程中形成。并且，钝化层(未示出)被进一步设置以保护电路图案(13)层。图6A所示的步骤可在图4所示的半导体晶片级中被执行。
在完成图6A所示的步骤后，另外执行研磨晶片模具11的下表面的步骤。由于最初形成的晶片较厚以便于在在晶片模具11中形成拍摄器件12的过程中操作晶片，因此需要该过程以使晶片具有适当的厚度。但是，该研磨步骤不是必要的。另外，可以形成保护膜以完全隔离晶片模具11的研磨的下表面。
虽然附图中未示出，但在以上步骤后，可提供进一步在第一半导体芯片10的拍摄器件12的表面上形成例如IR切割过滤器的过滤器19的步骤。可以在第一半导体芯片10的存在拍摄器件12的上表面上以CVD或PVD方法淀积过滤器19。当过滤器19没有被淀积于第一半导体芯片10的上表面上时，过滤器19可被固定地设置在外壳40内。
图6B示出在第一半导体芯片10的下表面上形成电路图案14和15的步骤。参照图6B，可以以与在第一半导体芯片10的上表面上形成电路图案13的方法相同的方法在第一半导体芯片10的下表面上形成电路图案14和15。可进一步形成用于保护电路图案14和15的钝化层(未示出)。可在半导体晶片级中执行图6B所示的步骤。
图6C示出在第一半导体芯片10中形成通路孔或通孔17的步骤。可以使用机械钻孔或激光钻孔形成孔17。可在半导体晶片级中执行图6C所示的步骤。
图6D示出电连接在第一半导体芯片10的上下表面上形成的电路图案13和15的步骤。在该步骤中，钨18以CVD方法被淀积到通路孔或通孔17中，或者铜18以电镀铜(electro copper plating)方法被镀到通路孔或通孔17上。因此，第一半导体芯片10的上表面上的电路图案13和第一半导体芯片10的下表面上的电路图案14和15被电连接。由于孔形成方法或层间电连接方法是公知的，因此这里将省略其详细的说明。可在半导体晶片级中执行图6D所示的步骤。
图6E示出将第二半导体芯片20电连接到第一半导体芯片10的下表面上的电路图案14和15上的步骤。第二半导体芯片20可以是DSP芯片21或存储器芯片22。同样，在被电连接的第二半导体芯片20中，DSP芯片21和存储器芯片22中的任何一个或两个可被安装到第一半导体芯片10上。
第二半导体芯片20可以以倒装芯片接合或TAB方法电连接到第一半导体芯片10的下表面上的电路图案14和15上。因此，在第二半导体芯片20的导电焊盘上形成凸块25。可以通过许多方法形成凸块25，这些方法包括但不限于：蒸镀法、电镀法、化学镀方法(electrolessplating method)、丝网印刷法、焊球安装法、螺栓(stud)法、针淀积(needle-depositing)法或Super-Juffit法。
形成凸块25的第二半导体芯片20被布置在第一半导体芯片10的下表面上并以直接固定法被接合。直接固定法可以是倒装芯片接合、TAB或其它方法。根据倒装芯片接合方法，第二半导体芯片20被翻转，使得第二半导体芯片20的上表面面对第一半导体芯片10的下表面，并且第二半导体芯片20的凸块25被直接固定到第一半导体芯片10的下表面的导电焊盘上。可以使用各向异性导电膜(ACF)、非导电糊剂(NCP)或非导电膜(NCF)执行倒装芯片接合方法。另外，可以通过焊料组合、热压组合、热声(thermosonic)组合执行倒装芯片接合方法。可以在半导体晶片级中执行图6E中所示的步骤。
图6F示出在第一半导体芯片10的下表面上的电路图案15上形成凸块16的步骤。凸块(16)形成方法与上述凸块(25)形成方法类似。在第一半导体芯片10的下表面上形成的凸块16的尺寸可被适当地调整，使得第二半导体芯片20的位置不低于凸块16的最下面的部分的水平。即，在第一半导体芯片10的下表面上形成的凸块16不但用作用于电连接第一半导体芯片10和FPCB30的器件，而且调整用于图像传感器的芯片封装的高度以在第一半导体芯片10和FPCB30之间的空间中容纳第二半导体芯片20。
图6G示出将第一半导体芯片10的下表面上的电路图案15电连接到FPCB 30上的步骤。可以使用倒装芯片接合、TAB或其它方法形成电连接。可以在半导体晶片级中执行图6F和图6G所示的步骤。
即，可以在半导体晶片级中执行图6A～6G所示的步骤。然后，在锯切或单个化晶片模具11后，可执行剩余的步骤。结果，可以在晶片级中执行用于图像传感器的芯片封装的许多步骤，使得可迅速执行制造步骤并且可降低制造成本。
图6H示出在第一半导体芯片10和FPCB 30之间的空间中填充底层填料的步骤。在第一半导体芯片10和FPCB 30被相互电连接后，向其间的空间填充底层填料。底层填料可以是流动、非流动、晶片级或其它类型。在本实施例中，热固性密封剂被分配到第一半导体芯片10的侧表面上，使得密封剂根据毛细现象渗透整个空间。然后，随着密封剂被固化，可提高用于图像传感器的芯片封装的耐冲击特性和可靠性。
图6I示出将外壳40固定到PCB 30上的步骤。可使用各种方法用于该目的。例如，密封剂(未示出)被分配到FPCB 30的上表面周围。外壳40被布置和被放置到FPCB 30上以与密封剂涂敷部分配合。通过使密封剂固化，外壳40被牢固地固定到FPCB 30上。
图6J示出将透镜组件45固定到外壳40上的步骤。外壳40的上部是开放的，并且，在外壳40的上部的内周表面上形成螺纹。透镜组件45被螺纹耦合到螺纹上。因此，拍摄器件12和DSP芯片21在外壳40和FPCB 30中被一体化地封装，使得完成用于图像传感器的芯片封装。
特别地，通过在倒装芯片接合方法中沿垂直方向集成第一半导体芯片10、第二半导体芯片20和FPCB 30，图6J所示的根据实施例的用于图像传感器的芯片封装可有效减小体积。并且，由于IR切割过滤器19被淀积于第一半导体芯片10的上表面上，因此用于图像传感器的芯片封装的体积可被进一步减小。另外，由于可以在晶片级中执行许多步骤，因此可减少制造时间并降低制造成本。
虽然参照本发明的优选实施例特别示出和说明了本发明，但本领域技术人员可以理解，在不背离由所附的权利要求限定的本发明的精神和范围的条件下，这里可以提出形式和细节上的各种变化。

Claims (22)

1.一种芯片封装，包括：
具有第一表面和与第一表面相对的第二表面的第一半导体芯片，第一表面包含拍摄器件和第一电路图案，并且第二表面包含与第一电路图案电连接的第二电路图案；
固定到第二电路图案上的第二半导体芯片；
面向第一半导体芯片的第二表面的印刷电路板，所述印刷电路板从芯片封装外部和向第一和第二半导体芯片中的至少一个传送电信号；和
至少容纳第一和第二半导体芯片的外壳，该外壳允许光穿过以到达拍摄器件。
2.根据权利要求1所述的芯片封装，其中，第二半导体芯片是数字信号处理器芯片和存储器芯片中的一个。
3.根据权利要求1所述的芯片封装，其中，第一和第二电路图案通过第一半导体芯片中的孔被电连接。
4.根据权利要求3所述的芯片封装，其中，第一半导体芯片中的孔至少部分覆盖有钨。
5.根据权利要求4所述的芯片封装，其中，使用化学汽相淀积过程形成孔中的钨。
6.根据权利要求3所述的芯片封装，其中，通过在第一半导体芯片中的孔上执行铜电镀电连接第一和第二电路图案。
7.根据权利要求1所述的芯片封装，还包括在拍摄器件的表面的至少一部分上形成的过滤器。
8.根据权利要求1所述的芯片封装，其中，第二电路图案通过倒装芯片互连与印刷电路板连接。
9.根据权利要求1所述的芯片封装，还包括：
与第二电路图案电连接的芯片接合焊盘；和
芯片接合焊盘上的凸块，
其中，通过将凸块连接到印刷电路板上的导电焊盘上进行倒装芯片接合。
10.根据权利要求1所述的芯片封装，其中，用不导电材料填充在第一半导体芯片和印刷电路板之间剩余的空间的至少一部分。
11.根据权利要求1所述的芯片封装，其中，第二半导体芯片通过倒装芯片互连固定到第二电路图案上。
12.一种制造芯片封装的方法，该方法包括：
(a)在模具的第一表面上形成拍摄器件和第一电路图案；
(b)在模具的第二表面上形成第二电路图案，该第二表面与第一表面相对；
(c)电连接第一和第二电路图案；
(d)使用倒装芯片互连将半导体芯片连接到第二电路图案上；以及
(e)将第二电路图案连接到印刷电路板上。
13.根据权利要求12所述的方法，其中，在半导体晶片级中执行步骤(a)～(d)。
14.根据权利要求12所述的方法，其中，通过化学汽相淀积过程在孔内淀积钨连接第一和第二电路图案。
15.根据权利要求12所述的方法，其中，通过对模具中的孔执行铜电镀连接第一和第二电路图案。
16.根据权利要求12所述的方法，还包括以下步骤：
在步骤(a)之后，在拍摄器件的表面的至少一部分上形成过滤器。
17.根据权利要求16所述的方法，其中，通过化学汽相淀积过程形成过滤器。
18.根据权利要求12所述的方法，其中，第二电路图案使用倒装芯片互连与印刷电路板连接。
19.根据权利要求18所述的方法，其中，通过将在电连接到第二电路图案上的芯片接合焊盘上形成的凸块固定到印刷电路板的导电焊盘上执行倒装芯片互连。
20.根据权利要求12所述的方法，还包括以下步骤：
在步骤(e)之后，用不导电材料填充在模具和印刷电路板之间剩余的空间的至少一部分。
21.根据权利要求12所述的方法，其中，半导体芯片是数字信号处理器芯片和存储器芯片中的一个。
22.一种芯片封装，包括：
具有第一表面和与第一表面相对的第二表面的第一半导体芯片；
在第一表面上形成的拍摄器件；
在拍摄器件的表面的至少一部分上形成的红外过滤器；
固定到第二表面上的第二半导体芯片；
面向第一半导体芯片的第二表面的柔性印刷电路板；
允许光穿过以到达红外过滤器的透镜组件；和
固定到印刷电路板和透镜组件上的外壳，该外壳容纳第一和第二半导体芯片，
其中，使用倒装芯片接合电连接第一半导体芯片、第二半导体芯片和柔性印刷电路板。
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CN107968077A (zh) * 2017-11-29 2018-04-27 信利光电股份有限公司 一种倒装芯片封装结构及工艺和摄像模组封装结构
CN110098157A (zh) * 2018-01-31 2019-08-06 三星电机株式会社 扇出型传感器封装件
CN110098157B (zh) * 2018-01-31 2023-04-14 三星电机株式会社 扇出型传感器封装件
CN112368833A (zh) * 2018-04-27 2021-02-12 佳能株式会社 图像拍摄单元及其制造方法
CN113471152A (zh) * 2021-06-30 2021-10-01 上海中航光电子有限公司 封装结构及封装方法、摄像头模组、电子设备
CN113471152B (zh) * 2021-06-30 2022-11-11 上海中航光电子有限公司 封装结构及封装方法、摄像头模组、电子设备

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