CN101165816B - 具有浮凸电阻性尖端的半导体探针及其制造方法 - Google Patents

具有浮凸电阻性尖端的半导体探针及其制造方法 Download PDF

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Publication number
CN101165816B
CN101165816B CN2007100966318A CN200710096631A CN101165816B CN 101165816 B CN101165816 B CN 101165816B CN 2007100966318 A CN2007100966318 A CN 2007100966318A CN 200710096631 A CN200710096631 A CN 200710096631A CN 101165816 B CN101165816 B CN 101165816B
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CN
China
Prior art keywords
resistive tip
embossed
substrate
adulterant
semiconductor
Prior art date
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Expired - Fee Related
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CN2007100966318A
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English (en)
Chinese (zh)
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CN101165816A (zh
Inventor
丁柱焕
李载泓
申炯澈
金俊秀
洪承范
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul National University Industry University Cooperation Foundation
Samsung Electronics Co Ltd
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Seoul National University Industry University Cooperation Foundation
Samsung Electronics Co Ltd
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Publication of CN101165816A publication Critical patent/CN101165816A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/30—Scanning potential microscopy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures

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  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Semiconductor Memories (AREA)
CN2007100966318A 2006-10-20 2007-04-19 具有浮凸电阻性尖端的半导体探针及其制造方法 Expired - Fee Related CN101165816B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060102467A KR100790893B1 (ko) 2006-10-20 2006-10-20 볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
KR102467/06 2006-10-20

Publications (2)

Publication Number Publication Date
CN101165816A CN101165816A (zh) 2008-04-23
CN101165816B true CN101165816B (zh) 2011-02-23

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CN2007100966318A Expired - Fee Related CN101165816B (zh) 2006-10-20 2007-04-19 具有浮凸电阻性尖端的半导体探针及其制造方法

Country Status (4)

Country Link
US (1) US7671616B2 (https=)
JP (1) JP4990728B2 (https=)
KR (1) KR100790893B1 (https=)
CN (1) CN101165816B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100790895B1 (ko) * 2006-11-16 2008-01-03 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
JPWO2017014307A1 (ja) * 2015-07-23 2018-05-24 富士フイルム株式会社 積層体
EP3419659A1 (en) 2016-02-23 2019-01-02 The Regents of the University of Colorado, A Body Corporate Compositions and methods for making and using thermostable immunogenic formulations with increased compatibility of use as vaccines against one or more pathogens

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923033A (en) * 1994-09-14 1999-07-13 Olympus Optical Co., Ltd. Integrated SPM sensor having a photodetector mounted on a probe on a free end of a supported cantilever

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3572030D1 (en) * 1985-03-07 1989-09-07 Ibm Scanning tunneling microscope
JP3198355B2 (ja) * 1991-05-28 2001-08-13 キヤノン株式会社 微小変位素子及びこれを用いた走査型トンネル顕微鏡、情報処理装置
US5475318A (en) * 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
US6028436A (en) * 1997-12-02 2000-02-22 Micron Technology, Inc. Method for forming coaxial silicon interconnects
KR100366701B1 (ko) * 1999-11-09 2003-01-06 삼성전자 주식회사 전계 효과 트랜지스터 채널 구조가 형성된 스캐닝 프로브마이크로스코프의 탐침 및 그 제작 방법
US6479892B1 (en) * 2000-10-31 2002-11-12 Motorola, Inc. Enhanced probe for gathering data from semiconductor devices
DE10155930B4 (de) * 2001-11-14 2020-09-24 Nano Analytik Gmbh Feldeffekttransistor-Sensor
KR100468850B1 (ko) * 2002-05-08 2005-01-29 삼성전자주식회사 저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 구비하는 정보 기록장치, 정보재생장치 및 정보측정장치
KR100624434B1 (ko) * 2004-09-07 2006-09-19 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
KR100682916B1 (ko) * 2005-01-15 2007-02-15 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
KR100785006B1 (ko) * 2005-09-03 2007-12-12 삼성전자주식회사 고분해능 저항성 팁을 구비한 반도체 탐침 및 그 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923033A (en) * 1994-09-14 1999-07-13 Olympus Optical Co., Ltd. Integrated SPM sensor having a photodetector mounted on a probe on a free end of a supported cantilever

Also Published As

Publication number Publication date
KR100790893B1 (ko) 2008-01-03
US20080094089A1 (en) 2008-04-24
US7671616B2 (en) 2010-03-02
CN101165816A (zh) 2008-04-23
JP2008102128A (ja) 2008-05-01
JP4990728B2 (ja) 2012-08-01

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