CN101158805B - 用于降低的掩模偏置的分开的虚拟填充形状的方法和系统 - Google Patents
用于降低的掩模偏置的分开的虚拟填充形状的方法和系统 Download PDFInfo
- Publication number
- CN101158805B CN101158805B CN2007101620054A CN200710162005A CN101158805B CN 101158805 B CN101158805 B CN 101158805B CN 2007101620054 A CN2007101620054 A CN 2007101620054A CN 200710162005 A CN200710162005 A CN 200710162005A CN 101158805 B CN101158805 B CN 101158805B
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- CN
- China
- Prior art keywords
- shape
- virtual
- mask
- virtual filling
- finishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/539,204 | 2006-10-06 | ||
US11/539,204 US7709300B2 (en) | 2006-10-06 | 2006-10-06 | Structure and method for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101158805A CN101158805A (zh) | 2008-04-09 |
CN101158805B true CN101158805B (zh) | 2011-04-13 |
Family
ID=39275929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101620054A Expired - Fee Related CN101158805B (zh) | 2006-10-06 | 2007-09-29 | 用于降低的掩模偏置的分开的虚拟填充形状的方法和系统 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7709300B2 (zh) |
CN (1) | CN101158805B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7709300B2 (en) | 2006-10-06 | 2010-05-04 | International Business Machines Corporation | Structure and method for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks |
US7861208B2 (en) * | 2007-10-16 | 2010-12-28 | International Business Machines Corporation | Structure for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks |
CN102053479B (zh) * | 2009-10-28 | 2012-11-21 | 中芯国际集成电路制造(上海)有限公司 | 光掩模缺陷的定位装置及定位方法 |
US8584052B2 (en) * | 2010-12-22 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cell layout for multiple patterning technology |
US8597860B2 (en) | 2011-05-20 | 2013-12-03 | United Microelectronics Corp. | Dummy patterns and method for generating dummy patterns |
CN102799060B (zh) * | 2011-05-26 | 2017-08-29 | 联华电子股份有限公司 | 虚设图案以及形成虚设图案的方法 |
US9977325B2 (en) * | 2015-10-20 | 2018-05-22 | International Business Machines Corporation | Modifying design layer of integrated circuit (IC) |
CN111259613B (zh) * | 2018-11-14 | 2023-08-15 | 华邦电子股份有限公司 | 电子装置及集成电路的布局方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5032890A (en) * | 1988-01-30 | 1991-07-16 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit with dummy patterns |
US5537648A (en) * | 1994-08-15 | 1996-07-16 | International Business Machines Corporation | Geometric autogeneration of "hard" phase-shift designs for VLSI |
CN1264162A (zh) * | 1999-02-13 | 2000-08-23 | 国际商业机器公司 | 用于铝化学抛光的虚拟图形 |
CN1503056A (zh) * | 2002-11-20 | 2004-06-09 | 国际商业机器公司 | 一种设计交替相移掩模的方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5763955A (en) | 1996-07-01 | 1998-06-09 | Vlsi Technology, Inc. | Patterned filled layers for integrated circuit manufacturing |
US6057063A (en) | 1997-04-14 | 2000-05-02 | International Business Machines Corporation | Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith |
US5932563A (en) * | 1998-10-23 | 1999-08-03 | Ohio State Research Foundation | Methods for treating spinal cord injury |
US6787271B2 (en) | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
JP2003168640A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 半導体装置の製造方法 |
US20030229875A1 (en) * | 2002-06-07 | 2003-12-11 | Smith Taber H. | Use of models in integrated circuit fabrication |
WO2003104921A2 (en) | 2002-06-07 | 2003-12-18 | Praesagus, Inc. | Characterization adn reduction of variation for integrated circuits |
US7067220B2 (en) | 2002-12-04 | 2006-06-27 | International Business Machines Corporation | Pattern compensation techniques for charged particle lithographic masks |
US7594213B2 (en) | 2003-11-24 | 2009-09-22 | Synopsys, Inc. | Method and apparatus for computing dummy feature density for chemical-mechanical polishing |
US7261981B2 (en) | 2004-01-12 | 2007-08-28 | International Business Machines Corporation | System and method of smoothing mask shapes for improved placement of sub-resolution assist features |
US7512924B2 (en) | 2006-01-17 | 2009-03-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and methods of manufacturing the same |
US7709300B2 (en) | 2006-10-06 | 2010-05-04 | International Business Machines Corporation | Structure and method for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks |
US7926006B2 (en) | 2007-02-23 | 2011-04-12 | International Business Machines Corporation | Variable fill and cheese for mitigation of BEOL topography |
US7861208B2 (en) | 2007-10-16 | 2010-12-28 | International Business Machines Corporation | Structure for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks |
-
2006
- 2006-10-06 US US11/539,204 patent/US7709300B2/en not_active Expired - Fee Related
-
2007
- 2007-09-29 CN CN2007101620054A patent/CN101158805B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5032890A (en) * | 1988-01-30 | 1991-07-16 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit with dummy patterns |
US5537648A (en) * | 1994-08-15 | 1996-07-16 | International Business Machines Corporation | Geometric autogeneration of "hard" phase-shift designs for VLSI |
CN1264162A (zh) * | 1999-02-13 | 2000-08-23 | 国际商业机器公司 | 用于铝化学抛光的虚拟图形 |
CN1503056A (zh) * | 2002-11-20 | 2004-06-09 | 国际商业机器公司 | 一种设计交替相移掩模的方法 |
Non-Patent Citations (1)
Title |
---|
Brian Lee.et al..Usiing smart dummy fill and selective reverseetchbackforpattern density equalization.Proc.CMP-MIC.2000,255-258. * |
Also Published As
Publication number | Publication date |
---|---|
US20080086714A1 (en) | 2008-04-10 |
CN101158805A (zh) | 2008-04-09 |
US7709300B2 (en) | 2010-05-04 |
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Effective date of registration: 20171121 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171121 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110413 Termination date: 20210929 |
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