CN101157127A - 具有置换稳定剂的含银纳米颗粒 - Google Patents
具有置换稳定剂的含银纳米颗粒 Download PDFInfo
- Publication number
- CN101157127A CN101157127A CNA2007101630874A CN200710163087A CN101157127A CN 101157127 A CN101157127 A CN 101157127A CN A2007101630874 A CNA2007101630874 A CN A2007101630874A CN 200710163087 A CN200710163087 A CN 200710163087A CN 101157127 A CN101157127 A CN 101157127A
- Authority
- CN
- China
- Prior art keywords
- silver
- containing nanoparticles
- composition
- acid
- replacement stabilizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 109
- 239000004332 silver Substances 0.000 title claims abstract description 108
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 89
- 239000003381 stabilizer Substances 0.000 title claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 56
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 15
- 238000000151 deposition Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 12
- ZQPPMHVWECSIRJ-MDZDMXLPSA-N elaidic acid Chemical compound CCCCCCCC\C=C\CCCCCCCC(O)=O ZQPPMHVWECSIRJ-MDZDMXLPSA-N 0.000 description 12
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 12
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 10
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 10
- 239000005642 Oleic acid Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 7
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 7
- -1 octadecane amine Chemical class 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 6
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 6
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 6
- ISYWECDDZWTKFF-UHFFFAOYSA-N nonadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCCC(O)=O ISYWECDDZWTKFF-UHFFFAOYSA-N 0.000 description 6
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 6
- SZHOJFHSIKHZHA-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O SZHOJFHSIKHZHA-UHFFFAOYSA-N 0.000 description 6
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 6
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 6
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 5
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- 235000021314 Palmitic acid Nutrition 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 4
- 235000021355 Stearic acid Nutrition 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 4
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- SECPZKHBENQXJG-FPLPWBNLSA-N palmitoleic acid Chemical compound CCCCCC\C=C/CCCCCCCC(O)=O SECPZKHBENQXJG-FPLPWBNLSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000008117 stearic acid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 4
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 4
- BITHHVVYSMSWAG-KTKRTIGZSA-N (11Z)-icos-11-enoic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCC(O)=O BITHHVVYSMSWAG-KTKRTIGZSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 3
- 229940108623 eicosenoic acid Drugs 0.000 description 3
- BITHHVVYSMSWAG-UHFFFAOYSA-N eicosenoic acid Natural products CCCCCCCCC=CCCCCCCCCCC(O)=O BITHHVVYSMSWAG-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- YAQXGBBDJYBXKL-UHFFFAOYSA-N iron(2+);1,10-phenanthroline;dicyanide Chemical compound [Fe+2].N#[C-].N#[C-].C1=CN=C2C3=NC=CC=C3C=CC2=C1.C1=CN=C2C3=NC=CC=C3C=CC2=C1 YAQXGBBDJYBXKL-UHFFFAOYSA-N 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- FJDUDHYHRVPMJZ-UHFFFAOYSA-N nonan-1-amine Chemical compound CCCCCCCCCN FJDUDHYHRVPMJZ-UHFFFAOYSA-N 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 3
- 229940071536 silver acetate Drugs 0.000 description 3
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 3
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 3
- 229940005605 valeric acid Drugs 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 2
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical class ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 description 2
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 2
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 description 2
- JPZYXGPCHFZBHO-UHFFFAOYSA-N 1-aminopentadecane Chemical compound CCCCCCCCCCCCCCCN JPZYXGPCHFZBHO-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- FWYOBHAWBXZUCR-UHFFFAOYSA-N CCCCCCCC.NNC(NN)=O Chemical compound CCCCCCCC.NNC(NN)=O FWYOBHAWBXZUCR-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 235000021319 Palmitoleic acid Nutrition 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- PLZVEHJLHYMBBY-UHFFFAOYSA-N Tetradecylamine Chemical compound CCCCCCCCCCCCCCN PLZVEHJLHYMBBY-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N alpha-octadecene Natural products CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000031709 bromination Effects 0.000 description 2
- 238000005893 bromination reaction Methods 0.000 description 2
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- SECPZKHBENQXJG-UHFFFAOYSA-N cis-palmitoleic acid Natural products CCCCCCC=CCCCCCCCC(O)=O SECPZKHBENQXJG-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 150000004816 dichlorobenzenes Chemical class 0.000 description 2
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 2
- KAJZYANLDWUIES-UHFFFAOYSA-N heptadecan-1-amine Chemical compound CCCCCCCCCCCCCCCCCN KAJZYANLDWUIES-UHFFFAOYSA-N 0.000 description 2
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- BMFVGAAISNGQNM-UHFFFAOYSA-N isopentylamine Chemical compound CC(C)CCN BMFVGAAISNGQNM-UHFFFAOYSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical compound CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- 229940038384 octadecane Drugs 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 2
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 2
- 229940067157 phenylhydrazine Drugs 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ABVVEAHYODGCLZ-UHFFFAOYSA-N tridecan-1-amine Chemical compound CCCCCCCCCCCCCN ABVVEAHYODGCLZ-UHFFFAOYSA-N 0.000 description 2
- ZQCUDFIHJAXGTP-RRABGKBLSA-N (e)-octadec-9-enoic acid;sodium Chemical compound [Na].CCCCCCCC\C=C\CCCCCCCC(O)=O ZQCUDFIHJAXGTP-RRABGKBLSA-N 0.000 description 1
- DJKSNTLJECQRCR-UHFFFAOYSA-N 1,3-diaminourea;pentane Chemical compound CCCCC.NNC(=O)NN DJKSNTLJECQRCR-UHFFFAOYSA-N 0.000 description 1
- ZRKMQKLGEQPLNS-UHFFFAOYSA-N 1-Pentanethiol Chemical compound CCCCCS ZRKMQKLGEQPLNS-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- TWJNQYPJQDRXPH-UHFFFAOYSA-N 2-cyanobenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C#N TWJNQYPJQDRXPH-UHFFFAOYSA-N 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- NJIXYUVRTVLTHN-UHFFFAOYSA-N C(CCCCC)C.NNC(NN)=O Chemical compound C(CCCCC)C.NNC(NN)=O NJIXYUVRTVLTHN-UHFFFAOYSA-N 0.000 description 1
- KGHNXGPEWXFARU-UHFFFAOYSA-N CCCCCCCCC.NNC(NN)=O Chemical compound CCCCCCCCC.NNC(NN)=O KGHNXGPEWXFARU-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- VPIAKHNXCOTPAY-UHFFFAOYSA-N Heptane-1-thiol Chemical compound CCCCCCCS VPIAKHNXCOTPAY-UHFFFAOYSA-N 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- 235000021360 Myristic acid Nutrition 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 1
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- VPPNWOWGOVJMQZ-UHFFFAOYSA-N [Na].C(CCCCCCCC=C/CCCCCC)(=O)O Chemical compound [Na].C(CCCCCCCC=C/CCCCCC)(=O)O VPPNWOWGOVJMQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical group 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- LLXBVJDIPFNQDA-UHFFFAOYSA-M benzene triethyl(methyl)azanium chloride Chemical compound C[N+](CC)(CC)CC.[Cl-].C1=CC=CC=C1 LLXBVJDIPFNQDA-UHFFFAOYSA-M 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- OWEZJUPKTBEISC-UHFFFAOYSA-N decane-1,1-diamine Chemical compound CCCCCCCCCC(N)N OWEZJUPKTBEISC-UHFFFAOYSA-N 0.000 description 1
- VTXVGVNLYGSIAR-UHFFFAOYSA-N decane-1-thiol Chemical compound CCCCCCCCCCS VTXVGVNLYGSIAR-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- HRKQOINLCJTGBK-UHFFFAOYSA-N dihydroxidosulfur Chemical compound OSO HRKQOINLCJTGBK-UHFFFAOYSA-N 0.000 description 1
- LAWOZCWGWDVVSG-UHFFFAOYSA-N dioctylamine Chemical compound CCCCCCCCNCCCCCCCC LAWOZCWGWDVVSG-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical class CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229940070765 laurate Drugs 0.000 description 1
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 1
- 235000020778 linoleic acid Nutrition 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- AMJIVVJFADZSNZ-UHFFFAOYSA-N n-butylpentan-1-amine Chemical compound CCCCCNCCCC AMJIVVJFADZSNZ-UHFFFAOYSA-N 0.000 description 1
- GMTCPFCMAHMEMT-UHFFFAOYSA-N n-decyldecan-1-amine Chemical compound CCCCCCCCCCNCCCCCCCCCC GMTCPFCMAHMEMT-UHFFFAOYSA-N 0.000 description 1
- QHCCDDQKNUYGNC-UHFFFAOYSA-N n-ethylbutan-1-amine Chemical compound CCCCNCC QHCCDDQKNUYGNC-UHFFFAOYSA-N 0.000 description 1
- ICVFPLUSMYSIFO-UHFFFAOYSA-N n-ethylpentan-1-amine Chemical compound CCCCCNCC ICVFPLUSMYSIFO-UHFFFAOYSA-N 0.000 description 1
- XCVNDBIXFPGMIW-UHFFFAOYSA-N n-ethylpropan-1-amine Chemical compound CCCNCC XCVNDBIXFPGMIW-UHFFFAOYSA-N 0.000 description 1
- PXSXRABJBXYMFT-UHFFFAOYSA-N n-hexylhexan-1-amine Chemical compound CCCCCCNCCCCCC PXSXRABJBXYMFT-UHFFFAOYSA-N 0.000 description 1
- JACMPVXHEARCBO-UHFFFAOYSA-N n-pentylpentan-1-amine Chemical compound CCCCCNCCCCC JACMPVXHEARCBO-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000012457 nonaqueous media Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- ZYXPMOIHQRKWGT-UHFFFAOYSA-N silver;2,2,2-trifluoroacetic acid Chemical compound [Ag].OC(=O)C(F)(F)F ZYXPMOIHQRKWGT-UHFFFAOYSA-N 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- 229940067741 sodium octyl sulfate Drugs 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- CMXPERZAMAQXSF-UHFFFAOYSA-M sodium;1,4-bis(2-ethylhexoxy)-1,4-dioxobutane-2-sulfonate;1,8-dihydroxyanthracene-9,10-dione Chemical compound [Na+].O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=CC=C2O.CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC CMXPERZAMAQXSF-UHFFFAOYSA-M 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- WFRKJMRGXGWHBM-UHFFFAOYSA-M sodium;octyl sulfate Chemical compound [Na+].CCCCCCCCOS([O-])(=O)=O WFRKJMRGXGWHBM-UHFFFAOYSA-M 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-O tributylazanium Chemical compound CCCC[NH+](CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-O 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax, thiol
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12181—Composite powder [e.g., coated, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
本发明公开了具有置换稳定剂的含银纳米颗粒及一种方法,所述方法包括:提供一种组合物,其包括含银纳米颗粒和含银纳米颗粒表面上的初始稳定剂的分子;和将包括羧酸的置换稳定剂与该组合物混合,用置换稳定剂置换至少一部分初始稳定剂,在含银纳米颗粒表面上形成置换稳定剂的分子。
Description
有关联邦资助人研究或开发的叙述
[0001]本发明按照由National Institute of Standards and Technology(国家标准与技术协会,NIST)颁布的合作协议号70NANBOH3033,由美国政府资助完成。美国政府具有本发明中的某些权利。
技术领域
[0002]本公开内容一般性涉及一种制造电子器件的方法。更具体地,本公开内容涉及一种使用液相沉积技术制造电子器件的方法。
背景技术
[0003]使用液相沉积技术制造电子电路元件具有深远的重要性,因为这种技术为用于例如薄膜晶体管(TFTs)、发光二极管(LEDs)、RFID标签、光电池等电子应用的常规主流无定形硅技术提供可能的低成本替代方案。但是将满足实际应用的导电率、加工和成本需求的功能性电极、像元衬垫和导电性接触线、电线和印制线沉积和/或形成图案已经是巨大的挑战。银作为电子器件的导电性元件具有特殊的重要性,因为银成本比金低得多并具有比铜好得多的环境稳定性。因此对制备可液态加工的稳定的含银纳米颗粒组合物的低成本方法存在重大需求,这是本发明实施方案所关注的,所述组合物适合于制造电子器件的导电性元件。
[0004]以下文献提供背景信息:
[0005]Yiliang Wu等,“高迁移率有机薄膜晶体管的印刷银欧姆接点(Printed Silver Ohmic Contacts for High-mobility Organic Thin-filmTransistors)”,J.Am.Chem.Soc.,128卷,4202-4203页(网络公开于03/09/2006)。
[0006]Pozarnsky等,US 6,688,494。
[0007]Lee等,US 6,572,673(例如第1栏,52-53行)公开酰肼作为还原剂。
[0008]Heath等,US 6,103,868。
[0009]Wilcoxon,US 5,147,841(例如第4栏,44行)公开肼作为还原剂。
[0010]G.Blanchet和J.Rodgers,“塑料电子器件的印刷技术(PrintedTechniques for Plastic Electronics)”,Journal of Imaging Science andTechnology,47卷,4期,296-303页(2003年7月/8月)。
[0011]P.Buffat和J-P.Borel,“基于金颗粒熔融温度的尺寸效应(Sizeeffect on the melting temperature of gold particles)”,Physical Review A,13卷,6期,2287-2298页(1976年6月)。
[0012]C.Hayashi,“超细颗粒(Ultrafine Particles)”,J.VacuumSci.Technol.A,5卷,4期,1375-1384页(1987年7月/8月)。
[0013]S.B.Fuller,E.J.Wilhelm和J.M.Jacobson,“喷墨打印纳米颗粒微型机电系统(Ink-Jet Printed Nanoparticle MicroelectromechanicalSystems)”,Journal of Microelectromechanical Systems,11卷,1期,54-60页(2002年2月)。
[0014]X.Z.Lin,X.Teng和H.Yang,“使用单一来源前体直接合成窄分散的银纳米颗粒(Direct Synthesis of Narrowly Dispersed SilverNanoparticles Using a Single-Source Precursor)”,Langmuir,19卷,10081-10085页(网络上公开于2003年11月1日)。
发明内容
[0015]在此公开如下实施方案。
[0016]方案1.一种方法,包括:
提供一种组合物,其包括含银纳米颗粒和含银纳米颗粒表面上的初始稳定剂的分子;和
将包括羧酸的置换稳定剂与该组合物混合,用置换稳定剂置换至少一部分初始稳定剂,在含银纳米颗粒表面上形成置换稳定剂的分子。
[0017]方案2.方案1的方法,其中含银纳米颗粒的尺寸为约0.5nm到约1000nm。
[0018]方案3.方案1的方法,其中含银纳米颗粒的尺寸为约1nm到约100nm。
[0019]方案4.方案1的方法,其中初始稳定剂为一种化合物,其包括选自-NH2、-NH-、-SH、-C5H4N、-COOH、-COOM、R′R″P-、R′R″P(=O)-及其混合物的部分,其中M为Li、Na或K,并且其中R′和R″独立地为烷基或芳基。
[0020]方案5.方案1的方法,其中初始稳定剂包括有机胺。
[0021]方案6.方案1的方法,其中初始稳定剂包括辛胺、壬胺、癸胺、十一烷胺、十二烷胺、十三烷胺、十四烷胺、十五烷胺、十六烷胺、油基胺、十八烷胺及其混合物。
[0022]方案7.方案1的方法,其中初始稳定剂包括不同的羧酸。
[0023]方案8.方案1的方法,其中羧酸包括1到约50个碳原子。
[0024]方案9.方案1的方法,其中羧酸包括约4到约20个碳原子。
[0025]方案10.方案1的方法,其中羧酸包括丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、十一烷酸、十二烷酸、十三烷酸、肉豆蔻酸、十五烷酸、棕榈酸、十七烷酸、硬脂酸、油酸、十九烷酸或二十烷酸或其混合物。
[0026]方案11.方案1的方法,其中混合置换稳定剂之后,在含银纳米颗粒的表面上存在残余量的初始稳定剂。
[0027]方案12.一种制造电子器件的方法,包括:
(a)液态沉积包括液态含银纳米颗粒、含银纳米颗粒表面上包括羧酸的置换稳定剂和含银纳米颗粒表面上残余量的初始稳定剂的组合物,形成沉积组合物;和
(b)加热沉积组合物形成包括银的导电层。
[0028]方案13.方案12的方法,其中液态沉积通过打印完成。
[0029]方案14.方案12的方法,其中加热温度为约50℃到约350℃。
[0030]方案15.方案12的方法,其中加热温度为约150℃到约250℃。
[0031]方案16.方案12的方法,其中液态沉积通过涂布完成。
[0032]方案17.方案12的方法,其中导电层具有大于约2,000S/cm的导电率。
[0033]方案18.方案12的方法,其中导电层具有大于约10,000S/cm的导电率。
[0034]方案19.方案12的方法,其中导电层具有大于约20,000S/cm的导电率。
[0035]方案20.一种薄膜晶体管,以任何有效布局包括:
(a)绝缘层;
(b)栅极;
(c)半导体层;
(d)源极;和
(e)漏极,
其中源极、漏极和栅极的至少一个包括起始成分,该起始成分包括含银纳米颗粒、含银纳米颗粒表面上的包括羧酸的置换稳定剂和含银纳米颗粒表面上的残余量的初始稳定剂。
[0036]在实施方案中,本方法产生用羧酸稳定的含银纳米颗粒,其可以在低温,例如低于约300℃,特别是低于约250℃,装配在用于电子器件的具有足够高导电率的导电性元件中。根据本方法制备的含银纳米颗粒在实施方案中具有良好的稳定性或存放期,并且可以制成用于制造电子器件用液态加工的导电性元件的具有适当液体的含银纳米颗粒组合物。
[0037]在实施方案中,用于制备含银纳米颗粒的本方法的优点为例如以下的一种或多种:(i)反应时间短;(ii)反应温度处于或接近室温(即约20-25℃);(iii)含银纳米颗粒组合物稳定并且可液态加工;(iv)原材料相对便宜;和(v)适用于各种羧酸。含银纳米颗粒组合物和用于制备它们的制备方法适合于大规模生产,并且将显著降低含银纳米颗粒的成本。
[0038]使用本方法制备的含银纳米颗粒组合物可以容易地用液态加工技术沉积到基材上,在液体蒸发之后,形成沉积器件(feature),例如线条、径迹和其它图案,所述液态加工技术例如丝网印刷、模版印刷、喷墨印刷、微接触印刷、旋涂等。在实施方案中,在该阶段得到的含银纳米颗粒器件是电绝缘的或具有极低导电率。然后将这些包括含银纳米颗粒的绝缘或极低导电性器件或图案加热到例如低于约300℃,特别是低于约250℃的温度,将含银纳米颗粒聚结或熔凝在沉积器件或图案中,形成薄膜导电率高于约100S/cm,特别是高于约2000S/cm的导电性元件。得到的高导电性元件可以在例如薄膜晶体管、有机发光二极管、RFID标签、光电池和其它电子器件中用作电极、导电性衬垫、电线等。
附图说明
[0039]图1表示根据本方法制造的薄膜晶体管的第一种实施方案。
[0040]图2表示根据本方法制造的薄膜晶体管的第二种实施方案。
[0041]图3表示根据本方法制造的薄膜晶体管的第三种实施方案。
[0042]图4表示根据本方法制造的薄膜晶体管的第四种实施方案。
[0043]除非另作说明,不同附图中的相同参考数字表示相同或相似的器件。
具体实施方式
[0044]本方法包括:提供包括含银纳米颗粒和含银纳米颗粒表面上的初始稳定剂分子的组合物;和将包括羧酸的置换稳定剂与该组合物混合,用置换稳定剂置换至少一部分初始稳定剂,在含银纳米颗粒表面上形成置换稳定剂的分子。
[0045]用于“含银纳米颗粒”的术语“纳米”表示小于约1000nm的粒度。在实施方案中,含银纳米颗粒具有例如约0.5nm到约1000nm,约1nm到约500nm,约1nm到约100nm,和特别是约1nm到约20nm的粒度。除非另有说明,在此所述的粒度是对于在其表面上具有初始稳定剂分子的含银纳米颗粒和在其表面上具有置换稳定剂分子的含银纳米颗粒而言。在本方法中,混合置换稳定剂之后,含银纳米颗粒的粒度可以或不可以改变。在此定义粒度为如由TEM(透射电子显微镜术)测定的,排除初始稳定剂/置换稳定剂的含银颗粒的平均直径。
[0046]含银纳米颗粒可以由任何合适的方法,例如化学方法和物理方法制备。例如,粒度为约5-7nm的银胶态纳米颗粒可以由例如C.Hayashi,“Ultrafine Particles”,J.Vacuum Sci.Technol.A,5卷,4期,1375-1384页(1987年7月/8月)中公开的物理方法制备,在此将其公开内容全部引入作为参考。
[0047]在实施方案中,制备包括含银纳米颗粒的组合物的化学方法可以包括在水性或非水性介质中伴随剧烈搅拌混合银盐和初始稳定剂,然后添加还原剂。任何合适的化学方法可以用于制备包括含银纳米颗粒和含银纳米颗粒表面上的初始稳定剂分子的组合物,例如以下文献中公开的代表性方法(在此将其公开内容全部引入作为参考):
[0048]Yiliang Wu等,美国申请序列号11/187,552(代理人案卷号20041534-US-NP),2005年7月22日提交,标题为“METHODS TOMINIMIZE CONTACT RESISTANCE”。
[0049]Y.Wu,Y.Li和B.S.Ong,“Printed Silver Ohmic Contacts forHigh-Mobility Organic Thin-Film Transistors”,J.Am.Chem.Soc.,128卷,4202-4203页(2006年)。
[0050]X.Z.Lin,X.Teng,H.Yang,“Direct Synthesis of NarrowlyDispersed Silver Nanoparticles Using a Single-Source Precursor”,Langmuir,19卷,10081-10085页(2003年),其中X.Z.Lin等报道了通过在160℃,在异戊胺中的油酸存在下,加热三氟乙酸银合成油酸稳定的银纳米颗粒。
[0051]Y.Wu,Y.Li和B.S.Ong,“Printed Silver Ohmic Contacts forHigh-Mobility Organic Thin-Film Transistors”,J.Am.Chem.Soc.,128卷,4202-4203页(2006年),其中Y.Wu等人描述了一种方法,通过在较低温度(60℃),在甲苯中的油酸存在下,通过用苯肼还原乙酸银,制备用油酸稳定的银纳米颗粒。
[0052]在实施方案中,含银纳米颗粒由元素银或银复合材料组成。除银之外,银复合材料包括(i)一种或多种其它金属和(ii)一种或多种非金属之一或两者。合适的其它金属包括例如Al、Au、Pt、Pd、Cu、Co、Cr、In和Ni,特别是过渡金属,例如Au、Pt、Pd、Cu、Cr、Ni及其混合物。示例性金属复合材料为Au-Ag、Ag-Cu、Au-Ag-Cu和Au-Ag-Pd。金属复合材料中合适的非金属包括例如Si、C和Ge。银复合材料的各个组分可以以例如约0.01wt%到约99.9wt%,特别是约10wt%到约90wt%的量存在。在实施方案中,银复合材料为由银和一种、两种或多种其它金属组成的金属合金,其中银构成纳米颗粒的例如至少约20wt%,特别是大于纳米颗粒的约50wt%。除非另作说明,在此所述的含银纳米颗粒组分的重量百分比不包括稳定剂,即初始稳定剂和/或置换稳定剂。
[0053]任何合适的步骤可以用于制造银复合材料纳米颗粒,例如S.Link,Z.L Wang和M.A.El-Sayed,“Alloy Formation of Gold-SilverNanoparticles and the Dependence of the Plasmon Absorption on TheirComposition”,J.Phys.Chem.,103卷,3529-3533页(1999年),在此将其公开内容引入作为参考,其中S.Link等人描述了一种方法,通过在柠檬酸钠水溶液中回流氯金酸(HAuCl4)和硝酸银(AgNO3),制备平均直径为17-18nm的银-金合金纳米颗粒。
[0054]含银纳米颗粒表面上的初始稳定剂可以为任何合适的化合物,例如包括选自-NH2的部分的化合物,例如丁胺、戊胺、己胺、庚胺、辛胺、壬胺、癸胺、十一烷胺、十二烷胺、十三烷胺、十四烷胺、十五烷胺、十六烷胺、油基胺、十八烷胺、二氨基戊烷、二氨基己烷、二氨基庚烷、二氨基辛烷、二氨基壬烷、二氨基癸烷、二氨基辛烷,包括选自-NH-的部分的化合物,例如二丙胺、二丁胺、二戊胺、二己胺、二庚胺、二辛胺、二壬胺、二癸胺、甲基丙胺、乙基丙胺、丙基丁胺、乙基丁胺、乙基戊胺、丙基戊胺、丁基戊胺、聚亚乙基亚胺,包括选自铵盐的部分的化合物,例如溴化三丁基铵、溴化双十二烷基二甲基铵、氯化苯甲基三乙基铵,包括选自-SH的部分的化合物,例如丁硫醇、戊硫醇、己硫醇、庚硫醇、辛硫醇、壬硫醇、癸硫醇、十一烷硫醇、十二烷硫醇,包括选自-SO2M(M为Li、Na、K或Cs)的部分的化合物,例如辛基硫酸钠、十二烷基硫酸钠,包括选自-OH(醇类)的部分的化合物,例如萜品油、淀粉、葡萄糖、聚(乙烯醇),包括选自-C5H4N(吡啶基)的部分的化合物,例如聚(乙烯基吡啶)、聚(乙烯基吡啶-共-苯乙烯)、聚(乙烯基吡啶-共-甲基丙烯酸丁酯),包括选自-COOH的部分的化合物,例如丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、十一烷酸、十二烷酸、十三烷酸、肉豆蔻酸、十五烷酸、棕榈酸、十七烷酸、硬脂酸、油酸、十九烷酸、二十烷酸、二十烯酸、反油酸、亚油酸、棕榈油酸、聚(丙烯酸),包括选自-COOM(M为Li、Na或K)的部分的化合物,例如油酸钠、反油酸钠、亚油酸钠、棕榈油酸钠、二十烯酸钠、硬脂酸钠、聚丙烯酸钠盐,包括选自R′R″P-和R′R″P(=O)-(R′、R″和R独立地为具有例如1到15个碳原子的烷基或具有例如6到20个碳原子的芳基)的部分的化合物,例如三辛基膦和三辛基膦氧化物等或其混合物。
[0055]置换稳定剂不同于初始稳定剂,并且置换稳定剂可以为任何合适的羧酸,例如丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、十一烷酸、十二烷酸、十三烷酸、肉豆蔻酸、十五烷酸、棕榈酸、棕榈油酸、十七烷酸、硬脂酸、油酸、反油酸、亚油酸、十九烷酸、二十烷酸、二十烯酸等或其混合物。
[0056]用于本方法的置换稳定剂的量可以为例如每摩尔银约0.01到约100摩尔当量,或每摩尔银约0.1到约10摩尔当量,或特别是每摩尔银约0.2到约5摩尔当量。存在于含银纳米颗粒表面上的置换稳定剂的量为例如约1wt%到约90wt%,特别是约5wt%到约80wt%,基于含银纳米颗粒、其表面上的置换稳定剂和其表面上的残余量初始稳定剂的重量。
[0057]应理解术语“初始稳定剂”、“置换稳定剂”和在此对于“初始稳定剂”和“置换稳定剂”所讨论的任何物质为开始成分,其可以或不可以在本方法中发生化学转化。例如,得到的具有置换稳定剂的含银纳米颗粒可以含有含银纳米颗粒表面上的残余量的初始稳定剂,该残余量的初始稳定剂为游离态的初始稳定剂,或与置换稳定剂形成的络合物或化合物。
[0058]任何合适的一种或多种液体可以用于本方法中(帮助分散或溶解)以促进本方法的例如这些方面:(a)提供一种包括含银纳米颗粒和含银纳米颗粒表面上的初始稳定剂分子的组合物;和(b)将包括羧酸的置换稳定剂与该组合物混合,用置换稳定剂置换至少一部分初始稳定剂,在含银纳米颗粒表面上形成置换稳定剂的分子。合适的液体包括例如有机溶剂和/或水。有机溶剂包括例如烃溶剂,例如戊烷、己烷、环己烷、庚烷、辛烷、壬烷、癸烷、十一烷、十二烷、十三烷、十四烷、甲苯、二甲苯、均三甲苯等,醇类,例如甲醇、乙醇、丙醇、丁醇等,四氢呋喃、氯苯、二氯苯、三氯苯、硝基苯、苯甲腈、乙腈及其混合物。使用的液体量可以为例如(a)中组合物和/或(b)中反应混合物的约5wt%到约98wt%,特别是约10wt%到约95wt%。
[0059]将包括羧酸的置换稳定剂与包括含银纳米颗粒以及含银纳米颗粒表面上的初始稳定剂的组合物混合,用置换稳定剂置换至少一部分初始稳定剂,在含银纳米颗粒表面上形成置换稳定剂的分子,在适当温度,例如约-50℃到约200℃,特别是约20℃到约100℃进行。
[0060]在实施方案中,可以对包括含银纳米颗粒(在其表面上具有置换稳定剂)的组合物进行进一步处理,例如用液相沉积技术使组合物相容(例如用于制造电子器件)。这种对包括含银纳米颗粒(在其表面上具有置换稳定剂)的组合物的进一步处理可以例如:(i)将反应混合物(任选通过除去部分溶剂浓缩)加入到非溶剂中沉淀含银纳米颗粒;(ii)通过过滤或离心收集含银纳米颗粒;(iii)在空气或真空中干燥含银纳米颗粒;(iv)在适当的液体中溶解或分散分离的含银纳米颗粒。
[0061]对于可溶于例如己烷、环己烷等非极性溶剂的含银纳米颗粒,可以用于沉淀含银纳米颗粒的合适的非溶剂包括可与在以上步骤(iv)中用来溶解含银纳米颗粒的溶剂溶混的任何液体,例如甲醇、乙醇、丙醇、丙酮等,或其混合物。具体液体是否被视为溶剂或非溶剂可以根据许多因素改变,包括例如置换稳定剂的类型和含银纳米颗粒的尺寸。
[0062]在实施方案中,得到的具有置换稳定剂的含银纳米颗粒含有含银纳米颗粒表面上的残余量的初始稳定剂,该残残余量的初始稳定剂为游离态的初始稳定剂,或与置换稳定剂形成的络合物或化合物。如果存在,含银纳米颗粒表面上的初始稳定剂的残余量为约0.001wt%到约30wt%,特别是约0.01wt%到约10wt%,基于纳米颗粒表面上的残余初始稳定剂以及置换稳定剂的重量。纳米颗粒表面上的初始稳定剂的残余量可以通过元素分析测定。
[0063]包括例如有机溶剂和水的任何合适的一种或多种液体可用于分散或溶解含银纳米颗粒,形成含银纳米颗粒组合物。合适的有机溶剂包括烃溶剂,例如戊烷、己烷、环己烷、庚烷、辛烷、壬烷、癸烷、十一烷、十二烷、十三烷、十四烷、甲苯、二甲苯、均三甲苯等;醇类,例如甲醇、乙醇、丙醇、丁醇、戊醇等;酮,例如丙酮、丁酮、戊酮、环己酮等,四氢呋喃、氯苯、二氯苯、三氯苯、硝基苯、苯甲腈、乙腈及其混合物。
[0064]在其表面上具有置换稳定剂分子的含银纳米颗粒以例如组合物(例如液体、含银纳米颗粒、置换稳定剂、任何残余的初始稳定剂等)的约0.3wt%到约90wt%,或约1wt%到约70wt%的量存在。
[0065]由在纳米颗粒表面上包括置换稳定剂分子的本含银纳米颗粒组合物(在实施方案中这些组合物可以称为“油墨”)制造导电性元件在实施方案中可以使用任何合适的液体沉积技术进行,包括i)打印,例如丝网/模版印刷、印模、微接触打印、墨喷打印等,和ii)涂布,例如旋涂、浸涂、刮涂等。在该阶段沉积的含银纳米颗粒器件可以或不能显示导电性。
[0066]在低于约300℃,优选等于或低于约250℃的温度加热沉积的组合物或器件引起含银纳米颗粒聚结,形成在电子器件中适合用作导电性元件的导电层。加热进行例如约5分钟到约10小时,特别是约10分钟到约1小时。
[0067]由加热沉积的含银纳米颗粒组合物产生得到的含银元件的导电率为例如大于约100S/cm,大于约500S/cm,大于约2000S/cm,大于约5000S/cm,大于约10000S/cm,和大于约20000S/cm,由四探针法测定。
[0068]得到的导电性元件可以在需要导电性元件或组件的例如薄膜晶体管、有机发光二极管、RFID(射频识别)标签、光电池和其它电子器件中用作导电性电极、导电性衬垫、导线、导电性轨迹等。
[0069]图1中,用图解法说明了薄膜晶体管(“TFT”)构造10,其由用作基材和栅极的大量n-掺杂的硅晶片18、热增长氧化硅绝缘层14组成,在绝缘层14上沉积了两个金属接触件,源极20和漏极22。金属接触件20和22之上和之间为在此说明的半导体层12。
[0070]图2用图解法说明由基材36,栅极38,源极40和漏极42、绝缘层34和半导体层32组成的另一个TFT构造30。
[0071]图3用图解法说明另一个TFT构造50,其由用作基材和栅极的大量n-掺杂的硅晶片56、热增长氧化硅绝缘层54和半导体层52组成,在半导体层52上沉积了源极60和漏极62。
[0072]图4用图解法说明由基材76、栅极78、源极80、漏极82、半导体层72和绝缘层74组成的另一个TFT构造70。
[0073]基材可以由例如硅、玻璃板、塑料膜或片组成。对于结构柔性设备,可以使用塑料基材,例如聚酯、聚碳酸酯、聚酰亚胺片材等。基材的厚度可以为10微米到超过10毫米,特别是对于软质塑料基材,示例性厚度为约50微米到约2毫米,对于硬质基材,例如玻璃或硅,示例性厚度为约0.4毫米到约10毫米。
[0074]栅极、源极和漏极由本发明的实施方案制造。栅极层的厚度为例如约10到约2000nm。源极和漏极的典型厚度为例如约40nm到约1微米,更特殊的厚度为约60nm到约400nm。
[0075]绝缘层通常可以为无机材料膜或有机聚合物膜。适合作为绝缘层的无机材料的说明性实例包括二氧化硅、氮化硅、氧化铝、钛酸钡、钛酸钡锆等;用于绝缘层的有机聚合物的说明性实例包括聚酯、聚碳酸酯、聚(乙烯基苯酚)、聚酰亚胺、聚苯乙烯、聚(甲基丙烯酸酯)、聚(丙烯酸酯)、环氧树脂等。绝缘层的厚度为例如约10nm到约500nm,取决于使用的介电材料的介电常数。绝缘层的示例性厚度为约100nm到约500nm。绝缘层可以具有例如低于约10-12S/cm的导电率。
[0076]例如位于绝缘层和源极/漏极之间并与之接触的是半导体层,其中半导体层的厚度通常为例如约10nm到约1微米,或约40nm到约100nm。任何半导体材料可以用来形成该层。示例性半导体材料包括区域规则性聚噻吩(regioregular polythiophene)、低聚噻吩(oligthiophene)、并五苯,以及Beng Ong等的US 2003/0160230 A1;Beng Ong等的US 2003/0160234 A1;Beng Ong等的US 2003/0136958A1;及C.D.Dimitrakopoulos和P.R.L.Malenfant的“Organic Thin FilmTransistors for Large Area Electronics”,Adv.Mater.,12卷,2期,99-117页(2002年)中公开的半导体聚合物,在此将其公开内容全部引入作为参考。任何合适的技术可以用来形成半导体层。一种此类方法是对含有基材的腔室和保持粉未状化合物的源容器施加约10-5至10-7托的真空。加热该容器直到化合物升华到基材上为止。半导体层通常也可以由溶液法,例如旋涂、流延、丝网印刷、印模或喷印半导体的溶液或分散体制造。
[0077]绝缘层、栅极、半导体层、源极和漏极以任何顺序形成,特别是在实施方案中,栅极和半导体层均接触绝缘层,并且源极和漏极均接触半导体层。短语“以任何顺序”包括顺序形成和同时形成。例如,源极和漏极可以同时形成或顺序形成。薄膜晶体管的组成、制造和操作描述在Bao等的US 6,107,117中,在此将其公开内容全部引入作为参考。
[0078]除非另有说明,所有百分数和份数按重量计。
[0079]实施例1
[0080]1)制备油基胺稳定的银纳米颗粒。
[0081]首先在60℃将乙酸银(1.67g,10mmol)和油基胺(6.69g,25mmol)溶于甲苯(20mL)。伴随搅拌,向该溶液中滴加甲苯(10mL)中的苯肼(0.59g,5.5mmol)溶液。将变为暗红棕色的所得反应混合物在60℃加热30分钟。伴随搅拌,将所得混合物倒入甲醇(100mL)和丙酮(100mL)的混合物中。通过过滤收集沉淀的固体,并在空气中干燥。产率:1.60g。
[0082]2)油基胺稳定的银纳米颗粒与羧酸的稳定剂交换。
[0083]油酸稳定的银纳米颗粒合成如下。类似地制备用其它羧酸稳定的银纳米颗粒并且结果示于表1。
[0084]在室温下伴随搅拌,将以上制备的油基胺稳定的银纳米颗粒溶于甲苯(30mL)并滴加到甲苯(50mL)中的油酸(8.47g,30mmol)溶液中。15分钟之后,将混合物倒入搅拌的甲醇(350mL)中。过滤并在真空(室温,30分钟)下干燥之后,得到深灰色固体。产率:1.48g。
[0085]3)羧酸稳定的银纳米颗粒薄膜的制造和退火。
[0086]将以上制备的羧酸稳定的银纳米颗粒溶于环己烷(10-15wt%)并过滤(过滤器孔径:1μm)。以1000rpm的速率将溶液在玻璃基材上旋涂120秒。在空气中,在220℃的电炉上将具有深棕色银纳米颗粒薄层的基材加热10-20分钟。然后得到银薄膜。银薄膜的厚度为约80-180nm。使用常规四探针技术测量银薄膜的导电率。
[0087]表1.用各种羧酸稳定的银纳米颗粒的合成和性能
操作号 | 羧酸 | 产率ga | 导电率×104,S/cm |
1 | 油酸(C17H33COOH) | 1.48 | 2.9 |
2 | 硬脂酸(C17H35COOH) | 1.43 | 1.2 |
3 | 棕榈酸(C15H31COOH) | 1.48 | 2.1 |
4 | 肉豆蔻酸(C13H27COOH) | 1.38 | 1.8 |
5 | 月桂酸(C11H23COOH) | 1.28 | 0.9 |
a由10mmol乙酸银得到
b在环己烷中
[0088]表1显示以高产率制备具有各种羧酸置换稳定剂的银纳米颗粒。由银纳米颗粒制备的薄膜可以在空气中在220℃退火10-20分钟时转化为高导电性薄膜,导电率为9×103到2.9×104S/cm。
Claims (3)
1.一种方法,包括:
提供一种组合物,其包括含银纳米颗粒和含银纳米颗粒表面上的初始稳定剂的分子;和
将包括羧酸的置换稳定剂与该组合物混合,用置换稳定剂置换至少一部分初始稳定剂,在含银纳米颗粒表面上形成置换稳定剂的分子。
2.一种制造电子器件的方法,包括:
(a)液态沉积包括液态含银纳米颗粒、含银纳米颗粒表面上包括羧酸的置换稳定剂和含银纳米颗粒表面上残余量的初始稳定剂的组合物,形成沉积组合物;和
(b)加热沉积组合物形成包括银的导电层。
3.一种薄膜晶体管,以任何有效布局包括:
(a)绝缘层;
(b)栅极;
(c)半导体层;
(d)源极;和
(e)漏极,
其中源极、漏极和栅极的至少一个包括起始成分,该起始成分包括含银纳米颗粒、含银纳米颗粒表面上的包括羧酸的置换稳定剂和含银纳米颗粒表面上的残余量的初始稳定剂。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/543,661 US7919015B2 (en) | 2006-10-05 | 2006-10-05 | Silver-containing nanoparticles with replacement stabilizer |
US11/543661 | 2006-10-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101157127A true CN101157127A (zh) | 2008-04-09 |
CN101157127B CN101157127B (zh) | 2012-03-21 |
Family
ID=38740264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101630874A Active CN101157127B (zh) | 2006-10-05 | 2007-09-30 | 具有置换稳定剂的含银纳米颗粒 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7919015B2 (zh) |
EP (1) | EP1916671B1 (zh) |
JP (1) | JP5450947B2 (zh) |
KR (1) | KR101379195B1 (zh) |
CN (1) | CN101157127B (zh) |
BR (1) | BRPI0703700A (zh) |
CA (1) | CA2604754C (zh) |
TW (1) | TWI422709B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101804458A (zh) * | 2009-02-12 | 2010-08-18 | 施乐公司 | 经有机胺稳定的银纳米颗粒及其制备方法 |
CN101996699A (zh) * | 2009-08-14 | 2011-03-30 | 施乐公司 | 在降低的加工温度下由银纳米颗粒形成高导电部件的新方法 |
CN102189072A (zh) * | 2010-03-12 | 2011-09-21 | 拜尔材料科学股份公司 | 使用含有静电稳定化银纳米颗粒的分散体生产导电性表面涂层的方法 |
CN102776505A (zh) * | 2011-05-13 | 2012-11-14 | 施乐公司 | 使用银纳米颗粒形成包覆层的方法以及线材 |
CN103201058A (zh) * | 2010-11-10 | 2013-07-10 | 同和电子科技有限公司 | 含有银粒子的组合物、分散液与糊料,以及其制备方法 |
CN103732701A (zh) * | 2011-06-14 | 2014-04-16 | 拜耳技术服务有限公司 | 用于制备导电结构的含银水性油墨制剂和用于制备这种导电结构的喷墨印刷方法 |
CN103827978A (zh) * | 2011-09-28 | 2014-05-28 | 富士胶片株式会社 | 导电性组合物、导电性构件及其制造方法、触摸屏及太阳电池 |
CN105340370A (zh) * | 2013-07-04 | 2016-02-17 | 爱克发-格法特公司 | 制备导电金属层或图案的方法 |
CN112548096A (zh) * | 2020-12-14 | 2021-03-26 | 中北大学 | 一种钴包覆陶瓷复合粉末及其制备方法和应用 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006328532A (ja) * | 2005-05-10 | 2006-12-07 | Samsung Electro-Mechanics Co Ltd | 金属ナノ粒子、これを製造する方法及び導電性インク |
KR100790457B1 (ko) * | 2006-07-10 | 2008-01-02 | 삼성전기주식회사 | 금속 나노입자의 제조방법 |
US7919015B2 (en) | 2006-10-05 | 2011-04-05 | Xerox Corporation | Silver-containing nanoparticles with replacement stabilizer |
JP4294705B2 (ja) | 2007-05-30 | 2009-07-15 | Dowaエレクトロニクス株式会社 | 有機物質で被覆された銀微粉の製法および銀微粉 |
US7768366B1 (en) * | 2007-10-29 | 2010-08-03 | The United States Of America As Represented By The Secretary Of The Air Force | Nanoparticles and corona enhanced MEMS switch apparatus |
US8048488B2 (en) * | 2008-01-14 | 2011-11-01 | Xerox Corporation | Methods for removing a stabilizer from a metal nanoparticle using a destabilizer |
KR101525099B1 (ko) * | 2008-06-30 | 2015-06-02 | 도와 일렉트로닉스 가부시키가이샤 | 미소금속입자함유 조성물 및 그 제조 방법 |
US8460584B2 (en) * | 2008-10-14 | 2013-06-11 | Xerox Corporation | Carboxylic acid stabilized silver nanoparticles and process for producing same |
WO2010057114A2 (en) | 2008-11-14 | 2010-05-20 | Dune Sciences Inc. | Functionalized nanoparticles and methods of forming and using same |
US8808789B2 (en) * | 2009-11-13 | 2014-08-19 | Xerox Corporation | Process for forming conductive features |
US8704105B2 (en) * | 2009-12-31 | 2014-04-22 | E I Du Pont De Nemours And Company | Mixed-metal system conductors for LTCC (low-temperature co-fired ceramic) |
KR101153516B1 (ko) * | 2010-03-23 | 2012-06-11 | 삼성전기주식회사 | 금속 나노입자의 제조방법, 이를 이용한 잉크 조성물 및 그의 제조방법 |
JP2011202265A (ja) * | 2010-03-26 | 2011-10-13 | Dowa Electronics Materials Co Ltd | 低温焼結性金属ナノ粒子組成物および該組成物を用いて形成された電子物品 |
WO2013053298A1 (zh) * | 2011-10-12 | 2013-04-18 | 郑州泽正技术服务有限公司 | 一种牙钻机头 |
DE102010025608A1 (de) * | 2010-06-30 | 2012-01-05 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
US20130183535A1 (en) * | 2010-09-29 | 2013-07-18 | Kaoru Konno | Adhesive composition and semiconductor device using the same |
TW201245364A (en) * | 2011-01-28 | 2012-11-16 | Hitachi Chemical Co Ltd | Adhesive composition and semiconductor device using same |
US20120286502A1 (en) * | 2011-05-13 | 2012-11-15 | Xerox Corporation | Storage Stable Images |
KR101873448B1 (ko) | 2011-07-15 | 2018-07-03 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 이의 제조방법 |
US20140318618A1 (en) * | 2011-11-21 | 2014-10-30 | Hanwha Chemical Corporation | Paste composition for front electrode of solar cell and solar cell using the same |
JP5868751B2 (ja) * | 2012-03-26 | 2016-02-24 | 富士フイルム株式会社 | 銀ナノワイヤ分散液の製造方法 |
JP5425962B2 (ja) * | 2012-04-04 | 2014-02-26 | ニホンハンダ株式会社 | 加熱焼結性銀粒子の製造方法、ペースト状銀粒子組成物、固形状銀の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP5908377B2 (ja) * | 2012-09-19 | 2016-04-26 | 住友化学株式会社 | 金属系粒子集合体の製造方法 |
JP6315669B2 (ja) * | 2014-02-28 | 2018-04-25 | ハリマ化成株式会社 | 銀微粒子の調製方法 |
US9809606B1 (en) | 2016-08-09 | 2017-11-07 | Eastman Kodak Company | Silver ion carboxylate N-heteroaromatic complexes |
US10356899B2 (en) | 2016-08-09 | 2019-07-16 | Eastman Kodak Company | Articles having reducible silver ion complexes or silver metal |
US10311990B2 (en) | 2016-08-09 | 2019-06-04 | Eastman Kodak Company | Photosensitive reducible silver ion-containing compositions |
US10087331B2 (en) | 2016-08-09 | 2018-10-02 | Eastman Kodak Company | Methods for forming and using silver metal |
US9718842B1 (en) | 2016-08-09 | 2017-08-01 | Eastman Kodak Company | Silver ion carboxylate primary alkylamine complexes |
US10314173B2 (en) | 2016-08-09 | 2019-06-04 | Eastman Kodak Company | Articles with reducible silver ions or silver metal |
US10186342B2 (en) | 2016-08-09 | 2019-01-22 | Eastman Kodak Company | Photosensitive reducible silver ion-containing compositions |
WO2020197753A1 (en) * | 2019-03-25 | 2020-10-01 | Sinovia Technologies | Non-equilibrium thermal curing processes |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1266761A (en) * | 1917-11-10 | 1918-05-21 | Clarence A Bailey | Automobile-crank. |
US4186244A (en) * | 1977-05-03 | 1980-01-29 | Graham Magnetics Inc. | Novel silver powder composition |
US5147841A (en) | 1990-11-23 | 1992-09-15 | The United States Of America As Represented By The United States Department Of Energy | Method for the preparation of metal colloids in inverse micelles and product preferred by the method |
US5492653A (en) * | 1994-11-07 | 1996-02-20 | Heraeus Incorporated | Aqueous silver composition |
US5882722A (en) * | 1995-07-12 | 1999-03-16 | Partnerships Limited, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds |
US6103868A (en) | 1996-12-27 | 2000-08-15 | The Regents Of The University Of California | Organically-functionalized monodisperse nanocrystals of metals |
WO2000076699A1 (en) * | 1999-06-15 | 2000-12-21 | Kimoto, Masaaki | Ultrafine composite metal powder and method for producing the same |
CN1266761A (zh) * | 2000-03-23 | 2000-09-20 | 南京大学 | 纳米级银粉的制备方法 |
ATE525730T1 (de) * | 2000-10-25 | 2011-10-15 | Harima Chemicals Inc | Elektroleitfähige metallpaste und verfahren zu ihrer herstellung |
US6572673B2 (en) | 2001-06-08 | 2003-06-03 | Chang Chun Petrochemical Co., Ltd. | Process for preparing noble metal nanoparticles |
US6688494B2 (en) | 2001-12-20 | 2004-02-10 | Cima Nanotech, Inc. | Process for the manufacture of metal nanoparticle |
US6638708B1 (en) * | 2002-07-22 | 2003-10-28 | Eastman Kodak Company | Silver (carboxylate-n-alkyl thiolate) particles for photothermographic of thermographic imaging |
US6878184B1 (en) * | 2002-08-09 | 2005-04-12 | Kovio, Inc. | Nanoparticle synthesis and the formation of inks therefrom |
EP1538918A4 (en) * | 2002-08-14 | 2006-11-02 | Du Pont | COATED PARTICLES CONTAINING UNSATURATED FATTY ACID AND COATED LIQUID PHARMACEUTICAL PARTICLES |
US7160525B1 (en) * | 2003-10-14 | 2007-01-09 | The Board Of Trustees Of The University Of Arkansas | Monodisperse noble metal nanocrystals |
US20050129843A1 (en) | 2003-12-11 | 2005-06-16 | Xerox Corporation | Nanoparticle deposition process |
EP1724789B1 (en) | 2004-03-10 | 2010-12-22 | Asahi Glass Company, Limited | Metal-containing fine particle, liquid dispersion of metal-containing fine particle, and conductive metal-containing material |
US20060044382A1 (en) * | 2004-08-24 | 2006-03-02 | Yimin Guan | Metal colloid dispersions and their aqueous metal inks |
JP2006089786A (ja) | 2004-09-22 | 2006-04-06 | Mitsuboshi Belting Ltd | 極性溶媒に分散した金属ナノ粒子の製造方法 |
US7270694B2 (en) | 2004-10-05 | 2007-09-18 | Xerox Corporation | Stabilized silver nanoparticles and their use |
JP2006118010A (ja) * | 2004-10-22 | 2006-05-11 | Toda Kogyo Corp | Agナノ粒子及びその製造方法、Agナノ粒子の分散溶液 |
US7706977B2 (en) * | 2004-10-26 | 2010-04-27 | Honeywell International Inc. | Personal navigation device for use with portable device |
JP5007020B2 (ja) | 2004-12-20 | 2012-08-22 | 株式会社アルバック | 金属薄膜の形成方法及び金属薄膜 |
US20060192183A1 (en) * | 2005-02-28 | 2006-08-31 | Andreas Klyszcz | Metal ink, method of preparing the metal ink, substrate for display, and method of manufacturing the substrate |
JP2006328532A (ja) * | 2005-05-10 | 2006-12-07 | Samsung Electro-Mechanics Co Ltd | 金属ナノ粒子、これを製造する方法及び導電性インク |
US7306969B2 (en) | 2005-07-22 | 2007-12-11 | Xerox Corporation | Methods to minimize contact resistance |
US7919015B2 (en) | 2006-10-05 | 2011-04-05 | Xerox Corporation | Silver-containing nanoparticles with replacement stabilizer |
US7737497B2 (en) * | 2007-11-29 | 2010-06-15 | Xerox Corporation | Silver nanoparticle compositions |
-
2006
- 2006-10-05 US US11/543,661 patent/US7919015B2/en active Active
-
2007
- 2007-09-28 CA CA2604754A patent/CA2604754C/en active Active
- 2007-09-30 CN CN2007101630874A patent/CN101157127B/zh active Active
- 2007-10-02 TW TW096136855A patent/TWI422709B/zh active
- 2007-10-04 JP JP2007260599A patent/JP5450947B2/ja active Active
- 2007-10-04 EP EP07117881.8A patent/EP1916671B1/en active Active
- 2007-10-04 KR KR1020070100035A patent/KR101379195B1/ko active IP Right Grant
- 2007-10-04 BR BRPI0703700-7A patent/BRPI0703700A/pt active IP Right Grant
-
2008
- 2008-12-04 US US12/328,088 patent/US7972540B2/en active Active
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101804458B (zh) * | 2009-02-12 | 2015-08-19 | 施乐公司 | 经有机胺稳定的银纳米颗粒及其制备方法 |
CN101804458A (zh) * | 2009-02-12 | 2010-08-18 | 施乐公司 | 经有机胺稳定的银纳米颗粒及其制备方法 |
CN101996699A (zh) * | 2009-08-14 | 2011-03-30 | 施乐公司 | 在降低的加工温度下由银纳米颗粒形成高导电部件的新方法 |
US9137902B2 (en) | 2009-08-14 | 2015-09-15 | Xerox Corporation | Process to form highly conductive feature from silver nanoparticles with reduced processing temperature |
CN102189072A (zh) * | 2010-03-12 | 2011-09-21 | 拜尔材料科学股份公司 | 使用含有静电稳定化银纳米颗粒的分散体生产导电性表面涂层的方法 |
CN102189072B (zh) * | 2010-03-12 | 2016-02-10 | 克莱里安特国际有限公司 | 使用含有静电稳定化银纳米颗粒的分散体生产导电性表面涂层的方法 |
CN103201058A (zh) * | 2010-11-10 | 2013-07-10 | 同和电子科技有限公司 | 含有银粒子的组合物、分散液与糊料,以及其制备方法 |
CN103201058B (zh) * | 2010-11-10 | 2015-05-20 | 同和电子科技有限公司 | 含有银粒子的组合物、分散液与糊料,以及其制备方法 |
CN102776505A (zh) * | 2011-05-13 | 2012-11-14 | 施乐公司 | 使用银纳米颗粒形成包覆层的方法以及线材 |
CN103732701A (zh) * | 2011-06-14 | 2014-04-16 | 拜耳技术服务有限公司 | 用于制备导电结构的含银水性油墨制剂和用于制备这种导电结构的喷墨印刷方法 |
CN103827978A (zh) * | 2011-09-28 | 2014-05-28 | 富士胶片株式会社 | 导电性组合物、导电性构件及其制造方法、触摸屏及太阳电池 |
CN103827978B (zh) * | 2011-09-28 | 2016-05-11 | 富士胶片株式会社 | 导电性组合物、导电性构件及其制造方法、触摸屏及太阳电池 |
CN105340370A (zh) * | 2013-07-04 | 2016-02-17 | 爱克发-格法特公司 | 制备导电金属层或图案的方法 |
CN112548096A (zh) * | 2020-12-14 | 2021-03-26 | 中北大学 | 一种钴包覆陶瓷复合粉末及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
TWI422709B (zh) | 2014-01-11 |
JP5450947B2 (ja) | 2014-03-26 |
EP1916671A2 (en) | 2008-04-30 |
KR101379195B1 (ko) | 2014-03-31 |
CN101157127B (zh) | 2012-03-21 |
KR20080031811A (ko) | 2008-04-11 |
EP1916671B1 (en) | 2013-12-11 |
JP2008095194A (ja) | 2008-04-24 |
US7972540B2 (en) | 2011-07-05 |
CA2604754A1 (en) | 2008-04-05 |
EP1916671A3 (en) | 2009-08-12 |
US20090110812A1 (en) | 2009-04-30 |
TW200831705A (en) | 2008-08-01 |
CA2604754C (en) | 2016-07-26 |
US7919015B2 (en) | 2011-04-05 |
BRPI0703700A (pt) | 2008-05-27 |
US20080085594A1 (en) | 2008-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101157127B (zh) | 具有置换稳定剂的含银纳米颗粒 | |
US7494608B2 (en) | Stabilized silver nanoparticle composition | |
US7443027B2 (en) | Electronic device having coalesced metal nanoparticles | |
CA2675187C (en) | Methods for producing carboxylic acid stabilized silver nanoparticles | |
US8048488B2 (en) | Methods for removing a stabilizer from a metal nanoparticle using a destabilizer | |
US7737497B2 (en) | Silver nanoparticle compositions | |
US6911385B1 (en) | Interface layer for the fabrication of electronic devices | |
CN101804458B (zh) | 经有机胺稳定的银纳米颗粒及其制备方法 | |
CN101996699A (zh) | 在降低的加工温度下由银纳米颗粒形成高导电部件的新方法 | |
CN101901639A (zh) | 使用含酸组合物的部件形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |