JP2008095194A - 置換安定剤を有する銀含有ナノ粒子、電子装置の製造方法及び薄膜トランジスタ - Google Patents
置換安定剤を有する銀含有ナノ粒子、電子装置の製造方法及び薄膜トランジスタ Download PDFInfo
- Publication number
- JP2008095194A JP2008095194A JP2007260599A JP2007260599A JP2008095194A JP 2008095194 A JP2008095194 A JP 2008095194A JP 2007260599 A JP2007260599 A JP 2007260599A JP 2007260599 A JP2007260599 A JP 2007260599A JP 2008095194 A JP2008095194 A JP 2008095194A
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- Prior art keywords
- silver
- stabilizer
- containing nanoparticles
- substitution
- nanoparticles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052723 transition metal Inorganic materials 0.000 description 1
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Images
Classifications
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
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- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
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- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
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- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/12181—Composite powder [e.g., coated, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Abstract
【解決手段】銀含有ナノ粒子と、銀含有ナノ粒子の表面に初期安定剤の分子とを有する組成物を生成し、カルボン酸を有する置換安定剤を組成物と混合して、初期安定剤の少なくとも一部を置換安定剤と置換し、銀含有ナノ粒子の表面に置換安定剤の分子を生じさせる方法を提供する。
【選択図】図1
Description
(1)オレイルアミンにより安定化された銀ナノ粒子の製造
最初に、銀アセテート(1.67g,10mmol)とオレイルアミン(6.69g,25mmol)を60℃のトルエン(20mL)に溶解させた。この溶液を攪拌しながら、フェニルヒドラジン(0.59g,5.5mmol)をトルエン(10mL)に溶解させた溶液を液滴として加えた。得られた暗赤褐色の反応混合物を60℃で30分間加熱した。加熱した混合物をメタノール(100mL)とアセトン(100mL)の混合物に攪拌しながら注入した。沈殿した固体を濾過して収集し、空気中で乾燥させた。発生量は1.60gであった。
オレイン酸により安定化された銀ナノ粒子の合成を以下に示す。他のカルボン酸で安定化された銀ナノ粒子を同様に製造し、結果を表1に示す。
上述のように製造したカルボン酸により安定化された銀ナノ粒子をシクロヘキサン(10ないし15重量%)に溶解させ、濾過した(濾過孔の大きさ:1μm)。得られた溶液を用いて、ガラス基板上にて速度1,000rpmで120秒間スピンコーティングを行った。こうして暗褐色の銀ナノ粒子の薄い層が形成された基板を、熱板上において空気中にて220℃で10ないし20分間加熱した。これにより銀薄膜が得られた。銀薄膜の厚さは約80ないし180nmであった。銀薄膜の導電性は、従来の四探針法で測定した。
Claims (3)
- 銀含有ナノ粒子と、前記銀含有ナノ粒子の表面に初期安定剤の分子とを有する組成物を生成し、
カルボン酸を有する置換安定剤を前記組成物と混合して、前記初期安定剤の少なくとも一部を前記置換安定剤と置換し、前記銀含有ナノ粒子の表面に前記置換安定剤の分子を生じさせることを特徴とする方法。 - 電子装置の製造方法であって、
(a)液体と、銀含有ナノ粒子と、前記銀含有ナノ粒子の表面にあるカルボン酸を有する置換安定剤と、前記銀含有ナノ粒子の表面に残留している初期安定剤とを有する組成物に対して液相析出法を行うことにより、析出した組成物を得て、
(b)前記析出した組成物を加熱して銀を有する導電層を形成することを特徴とする電子装置の製造方法。 - 薄膜トランジスタであって、
任意の有効な構成において、
(a)絶縁層と、
(b)ゲート電極と、
(c)半導体層と、
(d)ソース電極と、
(e)ドレイン電極と、
を備え、
前記ソース電極、前記ドレイン電極、および前記ゲート電極のうち少なくとも1つが、銀含有ナノ粒子と、前記銀含有ナノ粒子の表面にあるカルボン酸を有する置換安定剤と、前記銀含有ナノ粒子の表面に残留している初期安定剤とを含む出発原料を有することを特徴とする薄膜トランジスタ。
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BRPI0703700A (pt) | 2008-05-27 |
CN101157127B (zh) | 2012-03-21 |
TW200831705A (en) | 2008-08-01 |
CN101157127A (zh) | 2008-04-09 |
JP5450947B2 (ja) | 2014-03-26 |
CA2604754C (en) | 2016-07-26 |
US20080085594A1 (en) | 2008-04-10 |
US7919015B2 (en) | 2011-04-05 |
US7972540B2 (en) | 2011-07-05 |
KR101379195B1 (ko) | 2014-03-31 |
CA2604754A1 (en) | 2008-04-05 |
KR20080031811A (ko) | 2008-04-11 |
US20090110812A1 (en) | 2009-04-30 |
EP1916671A2 (en) | 2008-04-30 |
EP1916671B1 (en) | 2013-12-11 |
TWI422709B (zh) | 2014-01-11 |
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